WO2000060711A1 - Dispositif laser a semiconducteur et son procede de fabrication, systeme de communication optique, et systeme a capteur optique - Google Patents
Dispositif laser a semiconducteur et son procede de fabrication, systeme de communication optique, et systeme a capteur optique Download PDFInfo
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- WO2000060711A1 WO2000060711A1 PCT/JP2000/002207 JP0002207W WO0060711A1 WO 2000060711 A1 WO2000060711 A1 WO 2000060711A1 JP 0002207 W JP0002207 W JP 0002207W WO 0060711 A1 WO0060711 A1 WO 0060711A1
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- resin
- light
- semiconductor laser
- laser device
- laser chip
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
Definitions
- the present invention relates to a semiconductor laser device widely used in an optical communication system or an optical sensor system such as a communication, medical, or industrial sensor, and a method for manufacturing the semiconductor laser device.
- the present invention relates to a semiconductor laser device used for an application in which a person directly looks at a light source and a method of manufacturing the same, and an optical communication system and an optical sensor system using the same to ensure eye safety. Background art
- FIG. 10 shows an example of a conventional space-emitting semiconductor light-emitting device disclosed in Japanese Patent Application Laid-Open No. 8-264885.
- a laser chip 1 is soldered to a metal heat sink 6, and an upper surface thereof and an electrode (lead frame) 3 are electrically connected by wires 3a.
- the heat sink 6 is integrally formed on the stem 8. Further, the laser chip 1 is sealed by a cap 9 to which the diffusion plate 5 is adhered.
- light emitted from the laser chip 1 is radiated to the diffusion plate 5, and the direction and phase of the light are disturbed by the diffusion plate 5 and scattered. As a result, the coherency of the emitted light is reduced and safety to the eyes is ensured, and then emitted into space.
- a method of molding a laser chip using a mixture of a silica-based resin and an epoxy-based resin is also known.
- This method due to the difference in the refractive index between the epoxy resin and the silica resin, The direction is scattered and the coherency of the emitted light is reduced.
- epoxy-based materials are transparent to laser light and silica-based materials are opaque to laser light, epoxy-based resins mixed with a small amount of silica-based resin are used.
- the diffusion plate 5 as shown in FIG. 10 when used, in a use environment of the semiconductor laser device, a problem such as a damage of the diffusion plate due to a drop of mounted equipment or the like occurs, and a high output power is generated. There was concern that coherent light would be emitted into space. Furthermore, when a laser chip is molded using a resin mixed with a diffusion material, for example, when a resin mixed with a silica-based resin is used, since the silica-based resin has a high moisture permeability, the use of the resin may deteriorate the wire with use. Problems such as deterioration of the laser chip end face occurred, and reliability was reduced.
- the present invention has been made in order to solve such problems of the related art, and can prevent high-output coherent light from being emitted into space, thereby ensuring safety for eyes. It is an object of the present invention to provide a semiconductor laser device capable of improving reliability, a method of manufacturing the same, and an optical communication system and an optical sensor system using the same. Disclosure of the invention
- the semiconductor laser device of the present invention has a resin portion in which all or a part of a light emitting side surface is roughened, or a whole or a part of a surface facing a laser chip is roughened.
- the light is diffused by the roughened portion of the light source to reduce the coherency of the emitted light, thereby achieving the above object.
- the semiconductor laser device of the present invention has a resin portion for integrating a container accommodating a laser chip and a sealing member having a light diffusing function. The distance is reduced, thereby achieving the above object.
- a resin portion containing a material having a different refractive index or a resin portion made of a resin material having birefringence is provided so as not to come into contact with the laser chip, and light is diffused by the resin portion. As a result, the coherency of the emitted light is reduced, thereby achieving the above object.
- a resin portion having a region in which materials having different refractive indices are mixed or a region made of a resin material having birefringence in part is provided so that the region does not come into contact with the laser chip.
- the light is diffused by the region to reduce the coherency of the emitted light, thereby achieving the above object.
- the resin portion has a curved surface whose center near a center of a surface facing the laser chip has a light emission point as a center of curvature.
- the resin portion has a curved surface having a center of curvature on a side opposite to the laser chip, in a peripheral portion of a surface facing the laser chip.
- the resin portion has a substantially flat shape near the center of a surface facing the laser chip and a convex shape at a peripheral portion.
- an angle formed by a normal line of at least the light passing portion of the convex portion with respect to a light vector of a peak of light oscillated from the laser chip is greater than 0 ° and 3 ° or less. Is preferred.
- the resin portion has a substantially flat shape near the center of a surface facing the laser chip, and has a roughened peripheral portion.
- the resin portion may be made of a birefringent resin material.
- a resin portion made of a resin material having birefringence and a laser chip are integrated, and light is diffused by the resin portion to reduce coherency of radiated light. This achieves the above object.
- the birefringent resin material has an intrinsic birefringence value ⁇ at the oscillation wavelength of the semiconductor laser element and an average refractive index n at the wavelength, ⁇ / ⁇ 2 > 0.015. It is preferable that the following relationship be satisfied.
- the resin material having birefringence is selected from the group consisting of polyimide, polycarbonate, polyarylate, polyethersulfone, polyphenylene sulfide, polyphenylene oxide, polyallyl sulfone, polyamideimide, polyolefin, polyacrylonitrile, cellulose and polyester. It may be one kind, a polymer blend of two or more of these, or a polymer blend containing one or more of these.
- the birefringent resin material may be an aromatic polyester.
- the aromatic polyester may be polyarylate or polycarbonate.
- the aromatic polyester is a polyarylate obtained from a divalent phenol compound represented by the following general formula (I) and an aromatic dicarboxylic acid, or a polycarbonate obtained from the phenol compound and phosgene. Is also good.
- a method for manufacturing a semiconductor laser device is directed to a semiconductor laser having a resin part in which all or a part of a light emitting side surface is roughened, or a whole or part of a surface facing a laser chip is roughened.
- a method of manufacturing an element comprising: a step of molding a laser chip or a container containing the laser chip with a resin material; and a step of curing the resin material and roughening a corresponding portion.
- a method for manufacturing a semiconductor laser device is directed to a semiconductor laser having a resin part in which all or a part of a light emitting side surface is roughened, or a whole or part of a surface facing a laser chip is roughened.
- a method for manufacturing an element comprising: molding a laser chip or a container containing the laser chip with a resin material; And a step of roughening a corresponding portion of the cured resin, thereby achieving the above object.
- the step of roughening the corresponding portion of the cured resin can be performed by etching, polishing, or crimping a mold having a rough surface.
- An optical communication system includes the semiconductor laser device according to the present invention, whereby the above object is achieved.
- An optical sensor system includes the semiconductor laser device according to the present invention, thereby achieving the above object.
- the entirety or a part of the light emitting side surface of a resin portion such as a mold resin is roughened as shown in Embodiment 1 described later, or a cap is formed as shown in Embodiment 8 described later.
- All or part of the surface of the resin part, such as resin, for integrating the glass into the cap that faces the laser chip is roughened. Since the roughened portion of the resin part can diffuse the light and reduce the coherency of the radiated light, the diffusion plate is damaged as in the past, and there is a concern about safety to the eyes. There is no problem that the reliability of the semiconductor laser device is deteriorated by the silica-based resin.
- a desired portion of the resin portion can be easily roughened by using a mold or the like when the resin is cured after being molded with the resin material.
- the desired portion can be easily roughened by etching, polishing, or crimping a mold having a rough surface. Can be done.
- the surface of the resin portion is roughened by using a resin material having birefringence, so that the light diffusion property of the resin material itself and the surface roughening are achieved. Light diffusing ability by combining the two diffusion functions, more effective light Can be diffused, and a semiconductor laser device having good stability can be obtained.
- a container such as a cap containing a laser chip and a sealing member (cap glass) having a light diffusion function such as a diffusion plate are provided as described in a second embodiment described later. It is integrated with the resin part.
- the sealing member having the diffusion function since the sealing member having the diffusion function is integrated with the resin, the diffusion plate may be damaged as in the related art and the safety to the eyes may be concerned, or the reliability of the semiconductor laser device may be reduced due to the silica resin. There is no problem of the decrease
- a resin portion in which materials having different refractive indexes are mixed is provided. Due to the difference in the refractive index of the material contained in the resin part, light can be diffused to reduce the coherency of the radiated light. None. Further, since the laser chip is not in contact with the resin portion, stress distortion or the like due to a change in environmental temperature does not occur, and furthermore, reliability is reduced even if a material having moisture permeability such as silica resin is included. None.
- a resin portion made of a resin material having birefringence is provided.
- the refractive index differs depending on the polarization state of the incident light, and the light is diffused, which can reduce the coherency of the radiated light and damage the diffuser as in the past, raising concerns about eye safety. There is no. Further, there is no problem that the reliability of the semiconductor laser device is reduced by the silicic resin as in the related art.
- the S-polarized light extraction efficiency can be improved as shown in Embodiment 5 described later. Can be improved.
- the shape of the resin portion near the center of the surface facing the laser chip is a curved surface with the light emitting point of the laser chip as the center of curvature
- the shape of the peripheral portion is a curved surface with the center of curvature on the side opposite to the laser chip.
- the upper surface is flat as shown in Embodiments 6 and 2 described later.
- the light extraction efficiency can be improved when the light extraction surface is appropriate.
- the resin portion is characterized in that, when the angle formed by the normal line of at least the light passing portion of the convex portion with respect to the light vector of the peak of the light oscillated from the laser chip is larger than 0 ° and 3 ° or less, As shown in a sixth embodiment described later, the light extraction efficiency is further improved.
- a resin portion having a part of a region where materials having different refractive indexes are mixed is provided. Since light can be scattered due to the difference in the refractive index of the material contained in this region to reduce the coherency of the radiated light, there is a concern about safety to the eyes due to the breakage of the diffuser as in the past. There is no.
- a region where a material having a different refractive index is mixed is not in contact with the laser chip, stress distortion or the like due to a change in environmental temperature does not occur.
- a moisture-permeable material such as a silicic resin is contained in this region. However, the reliability does not decrease.
- a resin portion having a region made of a resin material having birefringence in part is provided.
- the refractive index varies depending on the polarization state of the incident light, and the light is diffused, so that the coherency of the radiated light can be reduced and the diffusion plate is damaged as before, and there is concern about eye safety.
- the reliability of the semiconductor laser device is reduced by the silicic resin as in the related art.
- a resin portion made of a resin material and a laser chip are integrated. Since the refractive index varies depending on the polarization state of the incident light, and the light is diffused, the coherency of the radiated light can be reduced, and the diffuser may be damaged as in the past, raising concerns about eye safety. There is no. In addition, since the birefringent resin material does not have moisture permeability unlike silica-based resin and the like, it can be directly molded.
- this birefringent resin material has a characteristic birefringence value ⁇ n at the oscillation wavelength of the semiconductor laser element and an average refractive index n at the wavelength of ⁇ / If the relationship of ⁇ 2 > 0.015 is satisfied, a sufficient light diffusion function can be obtained.
- the resin material having the birefringence examples include polyimide, polycarbonate, polyrelate, polyether sulfone, polyphenylene sulfide, polyphenylene oxide, polyallyl sulfone, polyamideimide, polyolefin, polyacrylonitrile, cellulose and polyester. Can be used. Further, a polymer blend containing two or more of these polymers or a polymer blend containing one or two or more of these polymers may be used. As described in Embodiment 9 and Embodiment 10 described later, light can be diffused by utilizing the birefringence of these resin materials. Further, since the transparency is good, the light extraction efficiency can be improved. Can be improved.
- Aromatic polyesters usually have an inherently high birefringence, most of which have relatively high thermal stability, and are often colorless and have good light transmission.
- Representative examples of aromatic polyesters having such high birefringence and excellent transparency include polyarylate-polycarbonate.
- a polyarylate obtained from a divalent phenol compound represented by the following general formula (I) and an aromatic dicarboxylic acid, or a polyarylate obtained from a divalent phenol compound represented by the following general formula (I) and phosgene Polycarbonate is preferred.
- 9,9-bis (4-hydroxyphenyl) -fluorene represented by the following structural formula (II) disclosed in JP-A-5-111115 and the like is used as a divalent phenol compound.
- Aromatic polyesters are typical.
- a small amount of a trivalent phenol compound or aromatic tricarboxylic acid may be added to obtain a three-dimensional (cross-linked) aromatic polyester, thereby improving the mechanical strength of the mold portion.
- the semiconductor laser device of the present invention has a high level of safety for the eyes and high reliability, it is suitable for applications where a person looks directly at the light source, such as a wireless optical communication system or an optical sensor system. Can be used. BRIEF DESCRIPTION OF THE FIGURES
- FIG. 1A is a cross-sectional view of the semiconductor laser device of the first embodiment
- FIG. 1B is a perspective view of a mold used for manufacturing the semiconductor laser device
- FIG. 1C and FIG. FIG. 3 is a cross-sectional view showing a semiconductor laser device of another embodiment 1.
- FIG. 2 is a perspective view of the semiconductor laser device of the second embodiment.
- FIG. 3A is a cross-sectional view of a semiconductor laser device according to the third embodiment
- FIG. 3B is a perspective view of a mold used for manufacturing the semiconductor laser device
- FIG. 4 is a cross-sectional view of the semiconductor laser device of the fourth embodiment.
- FIG. 5 (a) is a cross-sectional view of the semiconductor laser device of the fifth embodiment
- FIG. 5 (b) is a diagram showing the relationship between the reflectance of light rays to the resin portion and the incident angle for S-polarized light and P-polarized light.
- FIG. 6 is a sectional view of a semiconductor laser device according to the sixth embodiment.
- FIG. 7 is a cross-sectional view of the semiconductor laser device of the seventh embodiment.
- FIG. 8 is a cross-sectional view of a semiconductor laser device according to the eighth embodiment.
- FIG. 9 (a) is a perspective view of the semiconductor laser device of Embodiment 9, and FIG. 9 (b) is a perspective view for explaining the light diffusion.
- FIG. 10 is a perspective view of a conventional semiconductor laser device. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1A is a cross-sectional view illustrating the semiconductor laser device of the first embodiment.
- a laser chip 1 is die-bonded to a recess 2a on an upper side of a lead frame 2, and an upper electrode thereof is electrically connected to the other lead frame 3 by a wire 3a.
- the laser chip 1 is molded with resin, and the tip of the resin part 4 is roughened.
- This semiconductor laser device can be manufactured, for example, as follows. First, the laser chip 1 is die-bonded to the recess 2a at the upper part of the lead frame 2 using a silver paste or the like, similarly to the process of manufacturing a normal molded light emitting diode. Then, the upper electrode of the laser chip 1 and the lead frame 3 are electrically connected by a wire bonding process.
- the chip is immersed in a mold filled with a molding resin, and the resin is cured by heating.
- the oscillation wavelength of the semiconductor laser element is used as the resin.
- a transparent epoxy resin was used.
- a mold having a roughened bottom surface 5a as shown in FIG. 1 (b) was used as a mold. In this case, no extra steps are required simply by changing the mold design of the mold.
- the region to be roughened also depends on the spread of light of the laser chip itself, but generally only the tip portion needs to be roughened.
- the side surfaces can be roughened if necessary.
- the portion having the light diffusion function is the roughened portion of the resin portion 4 and is integrated with the laser chip.
- the element strength can be improved. Also, even if the resin part is peeled off for some reason, the wire 3a connecting the laser chip 1 and the lead frame 3 is cut and the laser oscillation stops, so that safety to the eyes is ensured. Can be maintained.
- the portion in contact with the laser chip 1 is made of only a transparent resin and does not use a material having high moisture permeability such as a silica-based resin as in the prior art, so that it absorbs little water and does not cause element deterioration due to it.
- the tip portion of the resin portion is melted with a solvent, or particles having a suitable roughness or a suitable sand particle are removed.
- a substantially similar rough surface can also be obtained by grinding with a paper file or the like or by pressing a mold having a rough surface to the front end of the mold. In this case, by simply adding a process after curing the mold, the conventional mounting process for light-emitting diodes can be used.
- a resin having a smooth surface is mixed with a resin having a different refractive index as a diffusing material, for example, a mixture of a silica-based resin and an epoxy-based resin is first cured and then further cured.
- a light diffusing portion as shown in FIG. 1 (c) may be formed by immersing the laser chip 1 in a transparent resin such as a resin and curing it.
- the light diffusion portion as shown in FIG. 1D may be formed by covering the periphery of the resin portion 4 of the semiconductor laser device molded with a transparent resin with a diffusible resin and curing the resin.
- the light diffusing portion can be formed by using a resin material having birefringence as shown in Embodiments 9 to 12 described later. In this case, in a region made of a birefringent resin material, the refractive index varies depending on the polarization state of the incident light, and the light can be scattered.
- the semiconductor laser device obtained by these methods is included in the invention described in claim 4.
- FIG. 2 is a perspective view showing a semiconductor laser device according to the second embodiment.
- a laser chip 1 is mounted on a heat sink 6 and an upper surface thereof is electrically connected to a lead frame 3 by wires 3a, similarly to a normal semiconductor laser package.
- the heat sink 6 is integrated on a stage 8 provided with a light receiving element 7. Further, the laser chip 1 is sealed by a cap 9 to which a cap glass (diffusion plate) 5 having a light diffusion function is adhered, and the diffusion plate 5 is integrated with the cap 9 by a resin portion 4.
- the cap can be produced, for example, as follows.
- Resin is dropped into the inside of the cap 9 to which the diffusion plate 5 is adhered, and thermally cured.
- the amount of the resin material at this time may be such that the resin portion 4 does not contact the laser chip 1 when the laser chip 1 is sealed with the cap 9, and strict control is not required.
- the resin material for example, a transparent resin such as an epoxy resin can be used, and the diffusion plate 5 can be the same as the conventional one.
- the cap 9 thus obtained is welded onto the stem 8 by electric heating.
- the resin portion 4 is embedded so as to cover the diffusion plate 5 inside the cap 9, so that the diffusion plate The eye is not damaged and will not be dropped, thus ensuring safety for the eyes.
- the laser chip 1 during laser oscillation generates heat and reaches a temperature several to several ten higher than the ambient temperature.
- stress distortion was generated at the interface between the resin part 4 and the laser chip 1 due to a difference in thermal expansion coefficient, and the laser chip 1 was found to have deteriorated depending on the use conditions.
- the semiconductor laser device according to the second embodiment since the resin portion 4 and the laser chip 1 are not in contact with each other, stress distortion due to a temperature change between the laser chip 1 and the resin portion 4 occurs. And reliability can be further improved.
- an ordinary cap glass having no light diffusion function is used instead of the diffusion plate 5, and a light diffusion resin (for example, a material having a different refractive index as a diffusion material is used as the diffusion material) in the cap 9.
- a light diffusion resin for example, a material having a different refractive index as a diffusion material is used as the diffusion material
- the resin portion is kept out of contact with the laser chip, the reliability does not decrease even if a material in which a silica-based resin is mixed with an epoxy-based resin is used.
- the semiconductor laser device obtained by this method is included in the invention described in claim 3.
- FIG. 3A is a perspective view showing a semiconductor laser device according to the third embodiment.
- a laser chip 1 is mounted on an IC substrate 14, and an upper surface thereof and a lead frame 3 are electrically connected by wires 3a.
- This laser chip 1 has a high reflectance on one side, and light is extracted from only one end face.
- a 45 ° mirror 15 is arranged on the light emitting side of the laser chip 1 so that light is emitted to the upper surface.
- a lens (resin part) 4 made of a resin is disposed thereon so as to cover the laser chip 1 and the 45 ° mirror 15. Furthermore, on the IC board 14 IC chip 12 is mounted.
- the lens 4 made of resin can be manufactured by using dies 10 and 11 as shown in FIG. 3 (b), for example.
- the resin material 4a a resin in which a material having a different refractive index is mixed as a light diffusing material, for example, a resin in which a silica-based resin is mixed in an epoxy-based resin can be used from the viewpoint of safety of laser light to the eyes.
- the lens 4 may be fixed by molding with a resin 13.
- the resin 13 it is preferable to use a resin having low moisture permeability.
- a resin material having birefringence as shown in Embodiments 9 to 12 described later may be used instead of the resin in which materials having different refractive indices are mixed.
- the light emitted from the laser chip 1 is diffused by the resin portion 4 and the radiation angle pattern is controlled by the lens effect. Therefore, light can be emitted into space over a wider angle range. Since the safety for the eye is determined by the optical power or optical power density incident on the pupil, it is very effective to be able to control the radiation angle distribution by the lens effect. Further, since the resin portion 4 and the laser chip 1 are not in contact with each other, stress distortion due to a temperature change between the laser chip 1 and the resin portion 4 does not occur, and reliability can be improved. Even if a material having moisture permeability such as a silica-based resin is used, the reliability does not decrease. Furthermore, if the 45 ° mirror 15 has a diffuser function with a rough surface, the safety to the eyes is further improved, and the diffusing material mixed into the resin part 4 is reduced to make the lens transparent. It is also possible to increase sex.
- FIG. 4 is a cross-sectional view showing a semiconductor laser device according to the fourth embodiment.
- This semiconductor laser device is obtained by molding a resin into a conventionally known semiconductor laser device to give a light diffusing function.
- Laser chip 1 is a can-type package
- a lens (resin portion) 4 made of resin is formed so as to cover the cap 9 and the cap glass 5b (normal one having no light diffusion function).
- the resin lens 4 can be manufactured using, for example, a mold 10 as shown in FIG. 3B.
- the resin material a resin mixed with a material having a different refractive index as a light diffusing material, for example, a resin mixed with a silica-based resin in an epoxy-based resin or the like can be used from the viewpoint of safety of laser light to the eyes.
- a resin material having birefringence as shown in Embodiment 9 to Embodiment 12 described later may be used instead of a resin in which materials having different refractive indexes are mixed.
- a compact semiconductor laser package that can ensure safety to the eyes can be obtained by the ordinary semiconductor laser device manufacturing process and the molding process.
- the light emitted from the laser chip 1 is diffused by the resin portion 4, and the radiation angle pattern can be easily controlled by the lens effect, and the connection to the optical fiber can be performed. easy. Since the resin portion 4 and the laser chip 1 are not in contact with each other, stress distortion due to a temperature change between the laser chip 1 and the resin portion 4 does not occur, and reliability can be improved. Even if a material having moisture permeability such as a silica-based resin is used, the reliability does not decrease.
- FIG. 5 is a sectional view showing a semiconductor laser device according to the fifth embodiment.
- This semiconductor laser device is obtained by changing the surface shape of the resin portion 4 in the semiconductor laser device of the second embodiment. Note that, in FIG. 5 and FIGS. 6 to 8 described later, the illustration of the lead frame and the wires is omitted.
- the shape near the center of the surface of the resin portion 4 facing the laser chip 1 was formed into a curved surface with the light emission point 0 of the laser chip 1 as the center of curvature.
- the region that was not substantially irradiated with the laser light had an arbitrary shape.
- Fig. 5 (b) shows the relationship between the reflectance of light rays
- the figure shows P-polarized light (the direction of the electric field is perpendicular to the plane of incidence). From this figure, it can be seen that the reflectance of S-polarized light is lowest at the time of vertical incidence.
- the reflectance of the S-polarized light incident on the resin portion 4 can be reduced, and the light extraction efficiency can be increased. This is particularly effective when a laser chip with a small beam spread angle is used. In the present embodiment, the light extraction efficiency can be improved by about 1% to 2%.
- the surface shape of the resin portion of the semiconductor laser device of the second embodiment is changed.
- the surface shape of the resin portion of the semiconductor laser device of the third embodiment can be changed. This is nothing but the problem of changing the design of the inner wall surface of the vehicle.
- FIG. 6 is a sectional view showing a semiconductor laser device according to the sixth embodiment.
- This semiconductor laser device is obtained by further changing the surface shape of the resin portion 4 in the semiconductor laser device of the fifth embodiment.
- the shape near the center of the surface of the resin portion 4 facing the laser chip 1 was made substantially flat, and the shape of the peripheral portion was made convex.
- the reason are as follows.
- all the light rays incident on the resin part 4 are vertically incident, and the direction does not change in the resin part 4.
- light is reflected at the interface between the diffusion plate 5 and the air, and the light extraction efficiency reaches a peak.
- the present inventors examined several resin shapes, and found that when the diffusion plate 5 on the upper surface is flat, the resin shape as shown in FIG. 6 can improve light extraction efficiency most. confirmed.
- the light diffusing resin is integrated with the ordinary cap glass as described in the second embodiment, since the light extraction surface (the upper surface of the cap glass) is flat, the shape of the resin surface facing the laser chip is not changed. According to the present embodiment, the light extraction efficiency is improved.
- the transmittance at the interface between the resin portion 4 and air is obtained by making the shape near the center of the surface of the resin portion 4 facing the laser chip 1 substantially flat and making the shape of the peripheral portion convex. Can be compensated for by improving the transmittance at the interface between the diffusion plate 5 and the air, and the overall transmittance can be improved. In this embodiment, the light extraction efficiency can be improved by about 3%.
- the angle (tilt angle) 16 between the normal line of the peripheral portion (convex portion) of the resin portion 4 and the peak ray vector of the oscillation light from the laser chip 1 is 3 degrees or less, The effect of improving light extraction efficiency was confirmed at a tilt angle of 0 degrees and 16 ⁇ 3 degrees.
- the region of the resin portion 4 which is not substantially irradiated with the laser beam can have any shape, and the shape may be designed only for the region irradiated with the laser beam.
- FIG. 7 is a sectional view showing a semiconductor laser device according to the seventh embodiment.
- This semiconductor laser device is obtained by further changing the surface shape of the resin portion 4 in the semiconductor laser device of the fifth embodiment.
- the shape near the center of the surface of the resin portion 4 facing the laser chip 1 is made a curved surface with the light emission point 0 of the laser chip 1 as the center of curvature, and the shape of the peripheral portion is called a laser chip.
- a curved surface ⁇ ′ having a center of curvature on the opposite side was formed.
- the reflectance of light is lower for P-polarized light than for S-polarized light Therefore, the overall reflectance can be reduced by effectively utilizing the P-polarized light.
- light rays near the central axis can be regarded as almost S-polarized light with respect to the virtual incident plane.
- a light beam deviated by about 45 degrees from the central axis has almost 1: 1 mixture of S-polarized light and P-polarized light, and the ratio of P-polarized light increases as the angle increases.
- the center of curvature is set as the light emission point ⁇ of the laser chip 1 to reduce the reflectance of S-polarized light from the center axis of the resin part 4 to about 45 degrees, and the P-polarized light from around 45 degrees to the periphery.
- a curved surface having a center of curvature on the side opposite to the laser chip is used.
- the light reflectance at the interface of the resin part 4 can be reduced according to the polarization state, and the light extraction efficiency can be improved.
- the light extraction efficiency was improved by 2% by using a laser chip having a horizontal and vertical beam spread angle of 30 degrees.
- FIG. 8 is a sectional view showing a semiconductor laser device according to the eighth embodiment.
- This semiconductor laser device is obtained by changing the surface shape of the resin portion 4 in the semiconductor laser device of the second embodiment.
- a normal cap glass having no light diffusion function is used in place of the diffusion plate 5, and a light diffusion resin is dropped into the cap 9 to harden it.
- the light-diffusing material typically absorbs light as large as about 20%, it has led to the heat generation of the element and a reduction in light extraction efficiency.
- a normal transparent resin is used, and the resin portion 4 is roughened as in Embodiment 8 on the entire surface of the resin facing the laser chip 1.
- Light diffusion occurs in the roughened portion, and a semiconductor laser device that does not require the diffusion plate 5 can be obtained. In this case, reflection occurs near the center and the transmittance decreases, but the effect can be reduced to about 10%.
- the semiconductor laser device obtained by this method is included in the first aspect of the present invention.
- FIG. 9A is a perspective view showing a semiconductor laser device of the ninth embodiment.
- This semiconductor laser device has realized a light diffusion function using a birefringent resin material.
- a laser chip 1 is mounted on a heat sink 6 and an upper surface thereof is electrically connected to a lead frame 3 by wires 3a, similarly to a normal semiconductor laser package.
- the heat sink 6 is integrated on a stage 8 provided with a light receiving element 7.
- the laser chip 1 is hermetically sealed by a cap 9 to which a cap glass 5b (a normal one having no light diffusion function) is adhered, and the cap glass 5b is formed by a resin portion 4c made of a birefringent resin material. It is integrated with Cap9.
- the semiconductor laser device of Embodiment 9 can be manufactured, for example, as follows.
- a highly transparent fluorinated polyimide (or simply polyimide) was used as the birefringent resin material. This material is described in the Journal of Japan Society of Applied Physics, As indicated, 2,2'-bis-4,4'-diaminobiphenyl (TFD B) and 4,4'-diaminodiphenyl ether (ODA) are combined with 2,2'-bishexaflu It can be synthesized by polymerizing with o-propane dianhydride (FDA) and heating.
- FDA o-propane dianhydride
- the generated copolymer molecules are oriented along the plane of the cap glass 5b, and are refracted by the polarization state of the light incident on the cap glass 5b.
- the rates are different and light can be diffused.
- the difference in refractive index at this time is about 0.008, which is a sufficient amount for light diffusion.
- the cap glass with resin 4 c, 5 b thus obtained is attached to the cap 9 and arranged so as to cover the laser chip 1.
- light diffusion of the semiconductor laser device will be described. In FIG.
- the light emitting point of the laser chip 1 is arranged at the origin of the rectangular coordinate system, the optical axis direction is shown as the z direction, and the direction parallel to the laser chip 1 is shown as the X direction. Since ordinary laser light has an electric field E in a direction parallel to the active layer of the laser chip (not shown, but in a direction parallel to the laser chip), this light is applied to a resin portion having a plane perpendicular to the z-axis. When incident on 4c, all rays whose X component of the ray direction vector is not 0 have an electric field component perpendicular to the resin interface and a horizontal electric field component. These rays have different refractive indices in the resin part 4c, and the light is diffused. In Fig. 9 (b), the P wave is the component where the electric field is incident parallel to the interface, and the S wave is the component which is incident vertically.
- the birefringence It is possible to realize light diffusion with high light extraction efficiency and good light transmittance of a resin material having a property. Therefore, unlike the case where a moisture-permeable material such as a silica-based resin is used, the light transmittance does not deteriorate and the light extraction efficiency does not decrease.
- the resin portion 4c made of a birefringent resin material does not need to be formed in the shape of a parallel plate as in the present embodiment, and for example, the light diffusing property as described in the third and fourth embodiments. It may be shaped like the resin part 4 of FIG.
- the resin portion 4 of the third embodiment is formed using fluorinated polyimide, molecules are oriented along the glass surface on the cap glass 5b, but the regularity of the orientation increases as the distance from the glass surface increases. Disappears and eventually loses birefringence. Thus, the alignment is uniform in a part of the resin part, and light is diffused in this part.
- the resin portion 4 of the fourth embodiment when a resin material having birefringence is used for the resin portion 4 of the fourth embodiment, the resin portion is relatively thin, so that the molecular orientation is uniform in the resin and the birefringence is almost present in all regions. A resin part is obtained.
- a plurality of molding steps are required to convert a part of the resin into a resin having a diffusive property.
- a birefringent resin material represented by polyimide has low moisture permeability, so that it can be directly molded on a laser chip.
- polyimide polycarbonate, polyarylate, polyethersulfone, polyphenylene sulfide, boliphenylene oxide, polyarylsulfone, polyamideimide, polyolefin, polyacrylonitrile, cellulose and polyester
- it may be a blend of two or more of these polymers or a polymer blend containing one or two or more of these.
- the intrinsic birefringence value ⁇ n at the oscillation wavelength of the semiconductor laser element and the average refractive index n at that wavelength satisfy the relationship of ⁇ ⁇ ⁇ ). Is more effective.
- a resin part in the case of polycarbonate, can be prepared by heating and melting a polycarbonate pellet obtained by the condensation of phosgene and bisphenol A, flowing into a mold, and cooling to room temperature. Further, a part of the light diffusion function can be performed by a birefringent resin.
- the resin portion 4 of the semiconductor laser element shown in FIG. 4 is formed using a birefringent resin material.
- a polyacrylate resin material and a polycarbonate resin material represented by the following structural formula were molded using a mold 10 shown in FIG. Boria relay resin material Bolicarbonate resin material
- the high resin A light diffusing function can be realized based on birefringence, and a semiconductor laser device having safety for eyes can be manufactured without requiring complicated processing or the like. Furthermore, both of these resin materials have excellent heat resistance at a Tg of 160 ° C. or higher, and also have excellent moisture resistance.
- a semiconductor laser device was manufactured in substantially the same manner as in Embodiment 1 except that the polyarylate resin material shown in Embodiment 11 was used instead of the epoxy resin in Embodiment 1. In the present embodiment, no processing related to curing was performed.
- the semiconductor laser device obtained in this way had a light diffusion function and was able to ensure safety for the eyes. Furthermore, the device characteristics were not degraded and the thermal characteristics were excellent.
- an optical communication system and an optical sensor system will be described. Since the semiconductor laser device of the present invention is safe for eyes, it is suitable for use in places where humans can directly see, such as wireless optical communication systems and optical sensor systems.
- the upper limit of the laser radiation power specified in the international safety standard is determined by the size and radiation angle of the light source. For example, with a Lambertian distribution that is a general radiation angle pattern and a directional half angle of 15 degrees, if the size of the light source is 10 mm and the wavelength is 780 nm, the light output up to about 160 mW can be obtained. It becomes possible.
- the present invention by providing a light diffusing function by roughening the resin molded on the laser chip or the resin for integrating the cap glass with the cap, etc. No obstacles such as cracks of the diffuser occur as in the past, and safety to the eyes is ensured. Further, since no diffusing material such as silica resin is used, the reliability of the semiconductor laser device can be improved. Furthermore, when the mold resin is roughened, the resin and the laser chip are bonded, so even if the resin may peel off for any reason, the wire of the laser chip will be cut to the eye. Safety is ensured.
- the surface is roughened using a mold or the like at the time of curing, so that it is possible to reduce the cost of the semiconductor laser element without changing the design of the mold and requiring extra steps. it can.
- a simple process after curing the mold can be used to add the conventional light emitting diode mounting process to the semiconductor laser device. Can be made.
- both the light diffusion property of the resin material itself and the light diffusion property due to the surface roughening can be achieved.
- the resin material having birefringence can be directly molded on the laser chip, productivity can be improved.
- the resin portion and the diffusion plate are integrated with each other, the diffusion plate is not easily damaged, and safety for eyes can be ensured.
- the laser chip and the resin part are not brought into contact, stress distortion from the resin part to the laser chip due to a change in environmental temperature or the like can be prevented, and the reliability of the semiconductor laser element can be improved. it can.
- light is diffused due to a difference in the refractive index of the material contained in the resin portion, so that there is no obstacle such as a break of a diffusion plate as in the related art, and the eye is safe. Nature is secured.
- a diffusion material having moisture permeability such as silica resin
- the reliability does not decrease because the laser chip and the resin are not in contact with each other. Stress distortion can also be prevented.
- the emission angle pattern is controlled by the lens effect, and light can be emitted into space over a wider angle range.
- This semiconductor laser device can also be manufactured by a normal semiconductor laser device manufacturing process and a molding process, and a small-sized semiconductor laser package that can ensure eye safety can be realized. Further, since the radiation angle pattern can be easily controlled by the lens effect, it is easy to connect to the optical fiber.
- the refractive index varies depending on the polarization state of the incident light to diffuse the light, reducing the coherence of the radiated light and ensuring safety for the eyes. Nature can be secured. Further, there is no problem that the reliability of the semiconductor laser device is reduced by the silica resin as in the conventional case. Even when not directly molded on the laser chip, the light transmittance of the resin material is high, so the light extraction efficiency can be improved, the light intensity / power consumption ratio can be improved, and power consumption can be reduced and device reliability can be improved. .
- the shape of the resin portion near the center of the surface facing the laser chip By making the shape of the resin portion near the center of the surface facing the laser chip a curved surface with the light emission point of the laser chip as the center of curvature, the extraction efficiency of S-polarized light can be improved. This is particularly effective when a laser chip having a small beam divergence angle is used.
- the shape of the resin portion near the center of the surface facing the laser chip is a curved surface with the light emitting point of the laser chip as the center of curvature
- the shape of the peripheral portion is a curved surface with the center of curvature on the side opposite to the laser chip.
- the light extraction efficiency from the diffusion plate can be improved.
- the angle between the normal line of at least the light passing portion of the convex portion of the resin portion and the ray vector of the peak of the light emitted from the laser chip should be greater than 0 ° and 3 ° or less. If this is the case, the light extraction efficiency is further improved.
- a light diffusion function can be given to the region, and the diffuser plate is broken as in the conventional case.
- the safety of the eyes is ensured without any obstacles such as Further, even if a diffusion material such as a silicon resin is used, the area is not in contact with the laser chip, so that the reliability can be improved.
- This area can be easily achieved by placing a resin mixed with a material with a different refractive index into a mold and curing it first, and then putting a resin not mixed with a material with a different refractive index into the mold and curing it. Can be manufactured.
- the refractive index varies depending on the polarization state of the incident light to diffuse the light, thereby reducing the coherence of the radiated light.
- safety for the eyes can be ensured.
- the reliability of the semiconductor laser device is reduced by the silicic resin as in the related art. Even when not directly molded on the laser chip, the light transmittance of the resin material is high, so the light extraction efficiency is improved and the light intensity power consumption ratio is improved to reduce power consumption. And the reliability of the element can be improved.
- the present invention by integrating a resin portion made of a resin material having birefringence and a laser chip, light is diffused by changing the refractive index according to the polarization state of incident light, and radiation is emitted. Light coherency can be reduced. Since this birefringent resin material does not have moisture permeability unlike silica-based resin and the like, direct molding is possible and productivity can be improved.
- the semiconductor laser device of the present invention safety for the eyes can be ensured, and an optical communication system and an optical sensor system with excellent reliability can be realized. It can be used very effectively.
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- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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DE60032127T DE60032127T2 (de) | 1999-04-05 | 2000-04-05 | Halbleiterlaservorrichtung und deren herstellungsverfahren, optisches kommunikationssystem und optisches sensorsystem |
EP00915355A EP1168535B1 (en) | 1999-04-05 | 2000-04-05 | Semiconductor laser device and its manufacturing method, optical communication system and optical sensor system |
US09/958,173 US6778574B1 (en) | 1999-04-05 | 2000-04-05 | Semiconductor laser device and its manufacturing method, and optical communication system and optical sensor system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11/98243 | 1999-04-05 | ||
JP9824399 | 1999-04-05 |
Publications (1)
Publication Number | Publication Date |
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WO2000060711A1 true WO2000060711A1 (fr) | 2000-10-12 |
Family
ID=14214530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2000/002207 WO2000060711A1 (fr) | 1999-04-05 | 2000-04-05 | Dispositif laser a semiconducteur et son procede de fabrication, systeme de communication optique, et systeme a capteur optique |
Country Status (4)
Country | Link |
---|---|
US (1) | US6778574B1 (ja) |
EP (2) | EP1746692B1 (ja) |
DE (2) | DE60032127T2 (ja) |
WO (1) | WO2000060711A1 (ja) |
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US7935139B2 (en) | 2001-12-10 | 2011-05-03 | Candela Corporation | Eye safe dermatological phototherapy |
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Also Published As
Publication number | Publication date |
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EP1168535B1 (en) | 2006-11-29 |
DE60041465D1 (de) | 2009-03-12 |
EP1168535A4 (en) | 2005-03-16 |
DE60032127D1 (de) | 2007-01-11 |
EP1168535A1 (en) | 2002-01-02 |
EP1746692B1 (en) | 2009-01-21 |
EP1746692A3 (en) | 2007-03-21 |
EP1746692A2 (en) | 2007-01-24 |
DE60032127T2 (de) | 2007-10-25 |
US6778574B1 (en) | 2004-08-17 |
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