WO2000049644A1 - Vorrichtung und verfahren zum behandeln von substraten - Google Patents
Vorrichtung und verfahren zum behandeln von substraten Download PDFInfo
- Publication number
- WO2000049644A1 WO2000049644A1 PCT/EP2000/000815 EP0000815W WO0049644A1 WO 2000049644 A1 WO2000049644 A1 WO 2000049644A1 EP 0000815 W EP0000815 W EP 0000815W WO 0049644 A1 WO0049644 A1 WO 0049644A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- treatment
- treatment fluid
- basin
- basins
- substrates
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Definitions
- the present invention relates to an apparatus and a method for treating substrates in a basin, which can be filled with at least two treatment fluids.
- Fig. 4 shows a process sequence for the treatment of substrates in the device according to the invention.
- a second pusher 14 can be provided adjacent to the first pusher 12, as shown in FIG. 1.
- one of the pushers for example the pushers 12
- the second pusher for example the pushers 14
- Lines 36, 38 extend from the closed circuit to inlets 37, 39 of the first and second treatment basins 16, 18.
- Return lines 40, 42 extend from the treatment basin 16, 18 back to the circuit in the chemical supply device 22.
- WO 00/49644 PCT / EP00 / 00815 . , ,
- the treatment basin 18 in the same way has an outlet 48 and an overflow 50.
- the return lines 40, 42 can be connected to the overflows 46, 50 and / or the outlets 44, 48.
- SC1 treatment of the wafers with the SC1 prepared in the chemical supply device 22
- OR overflow rinse, i.e. H. the treatment fluid in the respective pool is displaced from the pool by introducing another treatment fluid and made to overflow.
- QDR Quick Dump Rinse, i. H. the treatment fluid in the basin is drained very quickly through the respective outlet 44 or 48;
- DHF treatment of the wafers with dilute hydrofluoric acid;
- FR Final Rinse, i.e. H. the wafers are rinsed with deionized water;
- the treatment basin 18 (STT2) is loaded with wafers, while at the same time the SC1 is processed in the chemical supply device 22.
- the wafers are treated with SC1 in the treatment tank 18 for a specific period of time.
- the inflow of SC1 into the treatment basin 18 is stopped and, at the same time, new SC1 is prepared in the chemical supply device 22 for the next treatment.
- the SC1 still in the treatment basin 18 is displaced from the basin for rinsing the wafers by introducing di-water and caused to overflow, or the SC1 is drained off via the quick-release outlet 48, and subsequently di-water is introduced into the basin 18.
- DHF is then introduced into the treatment basin 18 for a certain period of time and held there or continuously passed through to it.
- the staggered control as described above ensures that there is sufficient time between the end of the SC1 treatment in the basin 18 and the start of the SC1 treatment in the basin 16 for the preparation of the SC1 chemical. Furthermore, the DHF treatment and the overflow rinse / final rinse treatments in the respective pools are staggered in time so that they do not overlap. Due to this time offset between the process sequences in the treatment basin 16 and 18, it is possible to use an SC1 supply device despite the required preparation time for the SC1, the 'capacity of which is essentially designed for the operation of only one treatment basin. The same applies to the DHF supply facility, although this does not involve the problem of a considerable preparation time for the chemical between successive treatment processes.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020017010481A KR20020018651A (ko) | 1999-02-18 | 2000-02-02 | 기판 처리 방법 및 장치 |
JP2000600294A JP2002537651A (ja) | 1999-02-18 | 2000-02-02 | 基板を処理するための装置及び方法 |
EP00903663A EP1153417A1 (de) | 1999-02-18 | 2000-02-02 | Vorrichtung und verfahren zum behandeln von substraten |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19906852.6 | 1999-02-18 | ||
DE19906852 | 1999-02-18 | ||
DE19926462A DE19926462C1 (de) | 1999-02-18 | 1999-06-10 | Verfahren und Vorrichtung zum Behandeln von Substraten |
DE19926462.7 | 1999-06-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000049644A1 true WO2000049644A1 (de) | 2000-08-24 |
Family
ID=26051924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/000815 WO2000049644A1 (de) | 1999-02-18 | 2000-02-02 | Vorrichtung und verfahren zum behandeln von substraten |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1153417A1 (de) |
JP (1) | JP2002537651A (de) |
TW (1) | TW452854B (de) |
WO (1) | WO2000049644A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111370294A (zh) * | 2020-03-17 | 2020-07-03 | 长江存储科技有限责任公司 | 采用化学试剂对晶圆处理的方法、装置和存储介质 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6095887B2 (ja) * | 2011-12-20 | 2017-03-15 | オルガノ株式会社 | 液体管理システム |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204201A (ja) * | 1992-09-25 | 1994-07-22 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH06275594A (ja) * | 1993-03-18 | 1994-09-30 | Sony Corp | 自動処理装置 |
JPH06314683A (ja) * | 1993-04-30 | 1994-11-08 | Sony Corp | 薬液処理装置 |
JPH09219386A (ja) * | 1996-02-07 | 1997-08-19 | Tokyo Electron Ltd | 洗浄装置 |
-
2000
- 2000-02-02 JP JP2000600294A patent/JP2002537651A/ja active Pending
- 2000-02-02 WO PCT/EP2000/000815 patent/WO2000049644A1/de not_active Application Discontinuation
- 2000-02-02 EP EP00903663A patent/EP1153417A1/de not_active Withdrawn
- 2000-02-08 TW TW89102056A patent/TW452854B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204201A (ja) * | 1992-09-25 | 1994-07-22 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH06275594A (ja) * | 1993-03-18 | 1994-09-30 | Sony Corp | 自動処理装置 |
JPH06314683A (ja) * | 1993-04-30 | 1994-11-08 | Sony Corp | 薬液処理装置 |
JPH09219386A (ja) * | 1996-02-07 | 1997-08-19 | Tokyo Electron Ltd | 洗浄装置 |
Non-Patent Citations (4)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 018, no. 556 (E - 1620) 24 October 1994 (1994-10-24) * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 684 (E - 1650) 22 December 1994 (1994-12-22) * |
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 02 31 March 1995 (1995-03-31) * |
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 12 25 December 1997 (1997-12-25) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111370294A (zh) * | 2020-03-17 | 2020-07-03 | 长江存储科技有限责任公司 | 采用化学试剂对晶圆处理的方法、装置和存储介质 |
CN111370294B (zh) * | 2020-03-17 | 2023-04-07 | 长江存储科技有限责任公司 | 采用化学试剂对晶圆处理的方法、装置和存储介质 |
Also Published As
Publication number | Publication date |
---|---|
JP2002537651A (ja) | 2002-11-05 |
EP1153417A1 (de) | 2001-11-14 |
TW452854B (en) | 2001-09-01 |
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