WO2000020927A1 - Composition de polysilazane photosensible et procede de formation d'une couche mince de polysilazane a motif - Google Patents
Composition de polysilazane photosensible et procede de formation d'une couche mince de polysilazane a motif Download PDFInfo
- Publication number
- WO2000020927A1 WO2000020927A1 PCT/JP1999/005498 JP9905498W WO0020927A1 WO 2000020927 A1 WO2000020927 A1 WO 2000020927A1 JP 9905498 W JP9905498 W JP 9905498W WO 0020927 A1 WO0020927 A1 WO 0020927A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polysilazane
- group
- photosensitive
- film
- composition according
- Prior art date
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- 229920001709 polysilazane Polymers 0.000 title claims abstract description 159
- 239000000203 mixture Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 70
- 239000011248 coating agent Substances 0.000 claims abstract description 68
- 239000000919 ceramic Substances 0.000 claims description 20
- 230000001235 sensitizing effect Effects 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000012298 atmosphere Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 12
- 238000010304 firing Methods 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- 125000005103 alkyl silyl group Chemical group 0.000 claims description 9
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 125000003282 alkyl amino group Chemical group 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 150000002978 peroxides Chemical group 0.000 claims description 7
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical group C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical group CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 4
- CDSULTPOCMWJCM-UHFFFAOYSA-N 4h-chromene-2,3-dione Chemical compound C1=CC=C2OC(=O)C(=O)CC2=C1 CDSULTPOCMWJCM-UHFFFAOYSA-N 0.000 claims description 3
- ZVSLRJWQDNRUDU-UHFFFAOYSA-L palladium(2+);propanoate Chemical group [Pd+2].CCC([O-])=O.CCC([O-])=O ZVSLRJWQDNRUDU-UHFFFAOYSA-L 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 239000002253 acid Substances 0.000 abstract description 4
- 239000000975 dye Substances 0.000 description 31
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 20
- -1 methyl acetate acetate peroxide Chemical class 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 238000000059 patterning Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 239000000049 pigment Substances 0.000 description 12
- 238000011161 development Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 10
- 229910052753 mercury Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000005524 ceramic coating Methods 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
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- 238000002156 mixing Methods 0.000 description 4
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- 239000000126 substance Substances 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- BEQKKZICTDFVMG-UHFFFAOYSA-N 1,2,3,4,6-pentaoxepane-5,7-dione Chemical compound O=C1OOOOC(=O)O1 BEQKKZICTDFVMG-UHFFFAOYSA-N 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005915 ammonolysis reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- KGGOIDKBHYYNIC-UHFFFAOYSA-N ditert-butyl 4-[3,4-bis(tert-butylperoxycarbonyl)benzoyl]benzene-1,2-dicarboperoxoate Chemical compound C1=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=CC=C1C(=O)C1=CC=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=C1 KGGOIDKBHYYNIC-UHFFFAOYSA-N 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 3
- AFABGHUZZDYHJO-UHFFFAOYSA-N 2-Methylpentane Chemical compound CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 2
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 2
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- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 241001125831 Istiophoridae Species 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000007796 conventional method Methods 0.000 description 2
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- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
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- ZFTFAPZRGNKQPU-UHFFFAOYSA-N dicarbonic acid Chemical compound OC(=O)OC(O)=O ZFTFAPZRGNKQPU-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
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- HEQBUZNAOJCRSL-UHFFFAOYSA-N iron(ii) chromite Chemical compound [O-2].[O-2].[O-2].[Cr+3].[Fe+3] HEQBUZNAOJCRSL-UHFFFAOYSA-N 0.000 description 2
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- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
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- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 2
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- MYOQALXKVOJACM-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy pentaneperoxoate Chemical compound CCCCC(=O)OOOC(C)(C)C MYOQALXKVOJACM-UHFFFAOYSA-N 0.000 description 1
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- VBQCFYPTKHCPGI-UHFFFAOYSA-N 1,1-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CCCCC1 VBQCFYPTKHCPGI-UHFFFAOYSA-N 0.000 description 1
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- QPFYXYFORQJZEC-FOCLMDBBSA-N Phenazopyridine Chemical compound NC1=NC(N)=CC=C1\N=N\C1=CC=CC=C1 QPFYXYFORQJZEC-FOCLMDBBSA-N 0.000 description 1
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- 241000270666 Testudines Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 235000018936 Vitellaria paradoxa Nutrition 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- UPIOMJRBERTBRP-UHFFFAOYSA-N [O-][N+](C(C=CC=C1)=C1C(C(C1=CC=CC=C1)=O)=O)=O.Br Chemical compound [O-][N+](C(C=CC=C1)=C1C(C(C1=CC=CC=C1)=O)=O)=O.Br UPIOMJRBERTBRP-UHFFFAOYSA-N 0.000 description 1
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- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
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- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- SHZIWNPUGXLXDT-UHFFFAOYSA-N caproic acid ethyl ester Natural products CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 1
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- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
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- 235000005822 corn Nutrition 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- 229920005565 cyclic polymer Polymers 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical group CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 150000002603 lanthanum Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- 125000002801 octanoyl group Chemical group C(CCCCCCC)(=O)* 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940070891 pyridium Drugs 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- NMOALOSNPWTWRH-UHFFFAOYSA-N tert-butyl 7,7-dimethyloctaneperoxoate Chemical compound CC(C)(C)CCCCCC(=O)OOC(C)(C)C NMOALOSNPWTWRH-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- DLSMLZRPNPCXGY-UHFFFAOYSA-N tert-butylperoxy 2-ethylhexyl carbonate Chemical compound CCCCC(CC)COC(=O)OOOC(C)(C)C DLSMLZRPNPCXGY-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 125000005413 thiopyridyl group Chemical group 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/62—Nitrogen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Definitions
- the present invention relates to a photosensitive polysilazane composition and a method for forming a patterned polysilazane film.
- the present invention relates to a photosensitive polysilazane composition, in particular, a photodegradable polysilazane composition capable of forming a film that can be finely patterned by light, and a pattern formed using such a composition.
- the present invention relates to a method for forming a polysilazane film and an insulating film.
- the photo resist includes a negative type, which becomes less soluble in a developer by light irradiation, and a positive type, which becomes more readily soluble in a developer by light irradiation.
- a dry etching method is often used for fine patterning of semiconductor devices, and a photo resist is required to withstand oxygen plasma (oxygen plasma resistance).
- a wide variety of organic materials including acrylic polymers, are generally used as the photo resist material. After completion of the buttering process (etching process), the photoresist is cleaned by oxygen plasma.
- various elements such as interlayer insulating films are patterned by thinning (ashing treatment) and / or an appropriate solvent. Such an element is generally exposed to a high temperature exceeding 400 ° C. in a manufacturing process of a semiconductor device or the like (for example, a wiring deposition process by CVD). Therefore, organic materials have insufficient heat resistance, and the use of inorganic materials is desired.
- the patterned ceramic ceramic film is a film excellent in heat resistance, abrasion resistance, corrosion resistance, insulation, transparency, etc.
- a coating liquid containing polysilazane is applied to a substrate to form a coating film, and the coating film is irradiated with ultraviolet rays in an oxidizing atmosphere in a pattern. It describes a method of forming a ceramics film pattern by curing a UV-exposed portion and then removing the UV-unexposed portion.
- the above-described ceramic film pattern can be regarded as a negative type photo resist because the light-irradiated portion is hardened and remains.
- the processing of semiconductor devices and the like is steadily miniaturized. For this reason, a positive resist material with high resolution and high oxygen plasma resistance is desired as the resist type.
- the patterned film is used as an interlayer insulating film, it is required to have high heat resistance, low dielectric constant, and transparency, which are required for the interlayer insulating film, in addition to the above requirements for miniaturization. Materials with excellent properties and properties are desired. Disclosure of the invention
- the present inventors have surprisingly found that when a photoacid generator is added to polysilazane, the polysilazane is unexpectedly decomposed by light irradiation.
- the inventors have found that a patterned polyrazan film can be obtained by removing the light-irradiated portion by the subsequent development, and arrived at the present invention.
- a method for forming a patterned polysilazane film comprising:
- the polysilazane is mainly represented by the following general formula (I):
- R ', R 2, R 3 are each independently a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, ⁇ Li Lumpur groups, moieties Kei Motomata in these Moto ⁇ outside directly connected to the nitrogen Represents a carbon group, an alkylsilyl group, an alkylamino group or an alkoxy group.
- the photosensitive polyrazan composition according to item [1] which is a denatured product.
- the polysilazane is mainly represented by the following general formula (II):
- R 4 and R 5 are each independently a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group.
- Group, alkylsilyl group Represents an alkylamino group or an alkoxy group, wherein n is an arbitrary integer.
- the peroxide is t-butylperoxybenzoate, 3,3 ', 4,4'tetra (t-butylperoxycanolevonyl) benzophenone, or ⁇ , a'-bis (7)
- the light-sensitive polysilazane composition according to item (7) which is (t-butylperoxy) diisopropylbenzene.
- the sensitizing dye is selected from coumarin, ketocoumarin and derivatives thereof, and thiopyridyl salt;
- the photosensitive polysilazane composition according to item [9].
- the patterned polysilazane film formed by the method described in [2] is converted into a silica-based ceramic film by leaving or firing in an ambient atmosphere.
- a method for forming a patterned insulating film comprising the steps of:
- the polysilazane by adding a photoacid generator to polysilazane, the polysilazane is decomposed by irradiating light in a pattern, and the polysilazane film patterned by subsequent development Is obtained.
- the non-polysilazane film can be directly used as a photo resist. Since the photoresist according to the present invention is a positive type, the resolution is high and the resistance to enzymatic plasma is higher than that of an organic material-based resist. In particular, the polysilazane film according to the present invention has high oxygen plasma resistance, and is therefore very useful as a substitute for a silicon-containing resist in a two-layer resist method.
- the photosensitive dye By including a photosensitive dye in the photosensitive polysilazane composition of the present invention, positive patterning using an inexpensive light source such as a high-pressure mercury lamp becomes possible.
- an oxidation catalyst in the composition of the present invention containing a photosensitive dye, the photosensitive dye can be decomposed at the time of baking the film after patterning, and can be used as an interlayer insulating film of a liquid crystal display device or the like.
- Useful and transparent silica-based ceramic coatings can be obtained.
- FIGS. 1A to 1F are schematic views showing a step of buttering an insulating film by a conventional method.
- 2A to 2D are schematic diagrams showing a ceramics film patterning process according to the present invention.
- the polysilazane used in the present invention is not limited to polysilazane alone.
- the polysilazane to be used includes a polysilazane having a chain, cyclic or cross-linked structure, or a polysilazane having a plurality of these structures in a molecule at the same time, and these can be used alone or as a mixture.
- Typical examples of the polysilazane used include the following, but are not limited thereto.
- Perhydropolysilazane is preferred in terms of hardness and denseness of the obtained film, and organopolysilazane is preferred in terms of flexibility.
- organopolysilazane is preferred in terms of flexibility.
- a method for producing polysilazane having a hydrogen atom at R ′ and R 2 and a methyl group at R 3 in the general formula (I) is described in D. Seyferth et al., Polym. Prepr., Am. Chem. Soc., Div. Polym. Chem., 25, 10 (1984).
- the polysilazane obtained by this method is a chain polymer and a cyclic polymer having a single repeating unit (SiH 2 NCH 3) —, and neither of them has a crosslinked structure.
- a method for producing a polyorgano (hydro) silazane having a hydrogen atom at R ′ and R 3 and an organic group at R 2 in the general formula (I) is described in D. Seyferth et al., Polym. Prepr., Am. Chem. Soc., Div. Polym. Chem., 25, 10 (1984) It is reported in Japanese Patent Application Laid-Open Nos. 61-89230 and 62-156139.
- the polysilazane used has a main skeleton consisting of the unit represented by the general formula (I), but the unit represented by the general formula (I) may be cyclized as is apparent from the above, in which case becomes its annulus partial end groups, Po Li when such circularization is not the end of the main skeleton of R ', it is that it is a similar group or hydrogen and R 2, R 3
- organo (hydro) silazanes have a cross-linked structure in the molecule, as reported by S. Seyferth et al. In the Communication of Am. Ce, Soc., C-132, July 1984. An example is shown below.
- R CH 5
- the polysilazane particularly suitable in the present invention is mainly composed of the following general formula (II):
- R 4 and R are each independently a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a group other than these groups, wherein the moiety directly connected to gay or nitrogen is carbon, Represents an alkylsilyl group, an alkylamino group or an alkoxy group, wherein n is an arbitrary integer.
- the most preferred Po Li silazane has the formula ([pi), R 4 turtles poly main ⁇ one R 5 is a methyl group is hydrogen Chirunrazan or wherein ([pi), R 4 is a phenyl group and R Polyvinylsilazane, where 5 is hydrogen You.
- Such polysilazane can be easily obtained by using R 4 SiC 1 as a starting material in the usual ammonolysis for synthesizing polysilazane. That is, port re main Chirushirazan from CH 3 S i C 1 3, port re off Wenirushirazan is C 6 H 5 S i C 1 3 forces, et al, respectively obtained.
- ammonolysis for synthesizing polysilazane see, for example, Japanese Patent Publication No. 63-163325 filed by the present applicant.
- a suitable port re silazane-modified product in the present invention one in the main Repetition rate unit (RS i N 3) one one (RS i N 0) -, one (RS i N 0 2) first and A number average molecular weight of 300 to 1 (RSi 0), wherein R is an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an alkylamino group or an alkylsilyl group; 100, 000 polyorganosiloxazan.
- Such polyorgano siloxazan has a general formula of R n S i X 4 —.
- R is an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an alkynoleamino group or an alkylsilyl group
- X is a halogen atom
- n is 1 or 2
- Such a polyorganosiloxane can be used as a precursor of an interlayer insulating film, since a fired film having a low dielectric constant can be obtained even when treated at a high temperature.
- the photosensitive polysilazane composition according to the present invention contains a photoacid generator.
- the photoacid generator is directly irradiated by irradiation with light in the wavelength region unique to the photosensitive acid or, in the case of using a photosensitive dye, indirectly by irradiation with light in the wavelength region in which the photosensitive dye is excited. Then, it is excited.
- the photoacid generator in the excited state cleaves the Si-N bond of the polysilazane and reacts with the moisture in the atmosphere through the state of a dangling bond to form silanol (Si— It is thought that an OH) bond is formed.
- silanol Si— It is thought that an OH bond is formed.
- -Since silanol is soluble in the developer described below, only the light-irradiated portion of the coating film of the photosensitive polysilazane composition is dissolved and removed, and a positive-type buttering is achieved.
- the photoacid generator can be a peroxide.
- peroxide-based photoacid generators include 3,3 ', 4,4'tetra (t-butylperoxycarbonyl) benzophenone, t-butylperoxybenzoate, Chinoleethyl ketone pentanoleoxide, cyclohexanone peroxide, methyl cyclohexanoperoxide, methyl acetate acetate peroxide, acetyl acetomethyl peroxide, 1,1 bis (t-hexyl peroxide) 3,3,5 — Trimethylethyl chlorohexane, 1,1 bis (t-hexylperoxy) cyclohexane, 1,1—bis (t-butylperoxy) 3,3, 5 — Trimethyl chlorohexane, di-t-butylperoxy 2 — methinolesicyclohexane, 1, 1 — bis (t-butylperoxy) cycl
- the photoacid generator can also be naphthoquinonediazidosulfonate or nitrobenzyl ester.
- 1,2-naphthoquinone- (2) -diazido-5-sulfonyl chloride 1,2, -naphthoquinone-diaphthonic acid ester-based photoacid generators , 2-naphthoquinone (2)-diazide 4-sulphonic acid chloride, 2, 3, 4-trihydroquinine benzophenone and 6-diazo 1, 5-6-di Hydro 5- (oxo-naphthalene)-(mono-tri) estenole with 1-sulfonate, 2, 3, 4, 4'-tri-hydroquin-benzov enone and 6-dia (Mono-tri) esters with azo-5,6—dihydro-5-oxo-naphthalene-11-snolephonic acid, and the like.
- nitrobenzyl ester photoacid generators include 2-nitrobenziltosylate, dinitrobenzinolate silicate, and nitrobenzinololola Gide, Ginitrobenzinolechloride, Nitrobenzil bromide, Ginitorobe Ginololebromide, nitrobenzene gillacetate, ginitolene benzoyl acetate, nitrobenzene phenolic acetate, nitrobenzene phenolic acetate, etc. Can be Benzont silicate is also useful as another photoacid generator. If necessary, these photoacid generators can be used in combination.
- the photosensitive polysilazane composition according to the present invention generally contains the photoacid generator in an amount of 0.0-5 to 50% by weight based on the weight of the polysilazane, depending on the type and use. If the content of the photoacid generator is less than 0.05% by weight, the decomposition reaction rate becomes extremely slow, and if it exceeds 50% by weight, on the other hand, a dense membrane characteristic of polysilazane is obtained. Is difficult to obtain.
- the photoacid generator is preferably contained in an amount of 0.1 to 20% by weight, more preferably 1 to 20% by weight, based on the weight of the polysilazane.
- the photosensitive polysilazane composition according to the present invention is prepared by adding the above-mentioned photoacid generator to polysilazane. It is preferable to uniformly mix the photoacid generator. For this purpose, polysilazane and the photoacid generator are mixed with sufficient stirring, or each is dissolved in a solvent described below and diluted. It is advisable to mix them afterwards. In particular, when the photoacid generator is a solid at the time of mixing, it is preferable to dissolve this in a solvent before mixing.
- the temperature and pressure during the addition are not particularly limited, and the addition can be performed at room temperature and under atmospheric pressure. However, in order to prevent excitation of the photoacid generator, from the time of its addition to the development step described below, work in an environment that does not include the photosensitive wavelength of the photoacid generator to be used, preferably in a suitable place. This is desirable.
- a sensitizing dye with the photosensitive polysilazane composition according to the present invention.
- the photoacid generator for example, 3, 3 ', 4, As in 4'-tetra (t-butylperoxycanolevonyl) benzophenone, the wavelength range in which it is excited is shorter than about 330 nm.
- an excimer laser such as a KrF system (248 nm) or an ArF system (193 nm
- the photoacid generator is directly excited. No sensitizing dye is required.
- the photoacid generator can be indirectly combined with a sensitizing dye that is excited in the wavelength range. Can be excited.
- a sensitizing dye By combining a sensitizing dye, the photosensitive polysilazane composition of the present invention can be patterned using a commonly used inexpensive light source.
- P-bis (0-methylstyryl) benzene 7-dimethylamino 4-methylquinolone 1, 7 _ amino-4, 1-methylmarin, 4, 6-dimethyl Chill 7—Echilamino Minomaline, 2— (p—Dimethylamino Minorium) 1 Piri Jirume Chinole—Jido, 7—Jetila Minocomaline, 7—Jetila Minnow 4 One methyl marin, 2,3,5,6-1H, 4H — Tetrahydridol 8 -Medium quinolin resin 9, 9a, l —gh> coumarin, 7 — Jechiruamino 41 Tri-fluoromethylinoremarin, 7 — Jechilamino 4—Trifluoromethyl marlin, 7—Amino
- sensitizing dyes include the following compounds. H 3
- sensitizing dyes are 7- ethylamino 14-methyl marin and 7- ethylamino 14-trifluoromethyl marin.
- the photosensitive polysilazane according to the present invention is used.
- the above-mentioned sensitizing dye may be contained in an amount of generally 0.05 to 50% by weight, preferably 1 to 20% by weight based on the weight of polysilazane.
- the resulting film may be colored.
- the composition is used as a photoresist, the resist is removed after a desired patterning process is completed, so that the coloring of the resist rarely causes a problem.
- the film after sintering may be exposed to visible light. It may be necessary to be transparent to Even in such a case, the photoacid generator contained in the composition of the present invention can degrade the sensitizing dye at the time of baking the film to make the film transparent.
- an oxidation catalyst which is not directly involved in the photoreaction but decomposes the sensitizing dye at the time of film baking to the composition of the present invention, a more transparent film can be obtained.
- an oxidation catalyst include metal organic compounds and fine particles such as palladium propionate, palladium acetate, acetyl acetate, platinum, ethyl acetate, platinum, palladium fine particles, and platinum fine particles. And the like.
- the photosensitive polysilazane composition according to the present invention generally has an amount of 0.05 to 10% by weight, preferably 0.1 to 5% by weight, based on the weight of the polysilazane. May be contained.
- unnecessary dyes can be decomposed and decolorized, and the conversion of polysilazane to ceramics can be promoted.
- a pigment is added to the photosensitive polysilazane composition to provide a color filter having excellent heat resistance, insulating properties, and hardness, and excellent pattern accuracy. Suitable for making black matrix and black matrix Thus, a polysilazane composition can be obtained.
- the pigment is dispersed in a silica-based ceramic. As a result, oxygen is blocked and the heat resistance (oxidation resistance at high temperatures) is excellent, and even if the pigment itself is conductive, it is considered as an insulator as a color filter and black matrix. Become.
- the silica-based ceramic film has a higher hardness than ordinary organic films such as acrylic polyimide, color filters and black matrices are used.
- the workability (film deposition, wiring, and bonding work) on the metal surface is improved, and the yield can be increased.
- the amount of outgas generated from the ceramic film strength during heating is much smaller than the amount of outgas generated from a general organic film.
- the amount of the pigment added is generally 0.05 to 100% by weight, preferably 10 to 500% by weight, based on the weight of the polysilazane.
- the photosensitive polysilazane composition to which the pigment according to the present invention is added is prepared by adding the above-mentioned photoacid generator and Z or the above-mentioned ⁇ sensitive dye and Z or the above-mentioned oxidation catalyst and pigment to the polysilazane. It is done by adding.
- the order of addition is not particularly important, but it is preferable that both are uniformly mixed.
- mixing is carried out with sufficient stirring at the time of addition, and a photoacid generator and Z or the sensitizing dye described above are used.
- Z or the above oxidation catalyst is preferably dissolved or dispersed in a solvent described below and diluted before mixing.
- benzene toluene, xylene, Aromatic compounds such as benzene, getylbenzene, trimethylinobenzene, triethylbenzene, etc .; cyclohexane; cyclohexene; decahydronaphtalene; dipentene; n-pentane; i —Pentane, n—hexane, i—hexane, n—heptane, i—heptane, n—octane, i—octane, n—nonan, i—nonan, n— Saturated hydrocarbon compounds such as decane, i-decane, etc .; ethyl cyclohexane; methylcyclohexane; p-menthane; ethers such as dipropyl ether, dibutyl ether, etc .; It is preferable
- the amount (proportion) of the solvent used is selected so as to improve the workability according to the coating method adopted later, and varies depending on the average molecular weight, molecular weight distribution and structure of the polysilazane used. Can be mixed. However, considering the stability and production efficiency of the polysilazane, the polysilazane concentration is preferably 0.1 to 50% by weight, more preferably 0.1 to 40% by weight. .
- an appropriate filler and / or extender can be added to the photosensitive polysilazane composition according to the present invention, if necessary.
- the filler include silica, alumina, zirconia, fine powders of oxide-based inorganic substances such as My power, and non-oxide-based inorganic substances such as silicon carbide and silicon nitride.
- metal powders such as aluminum, zinc and copper.
- These fillers may be used alone or in a mixture of two or more in various shapes such as needle-like (including a powder force), granular, and scale-like. It is also desirable that the particle size of these fillers be smaller than the film thickness that can be applied at one time.
- the photosensitive polysilazane composition of the present invention may contain various pigments, a leveling agent, an antifoaming agent, an antistatic agent, an ultraviolet absorber, a pH adjuster, a dispersant, a surface modifier, Plasticizers, drying accelerators and anti-flow agents may be added.
- a method for forming a silica-based ceramics film which has been dispersed using the above photosensitive polysilazane composition. That is, the method of the present invention comprises the steps of: forming a coating film of a photosensitive polysilazane composition containing polysilazane and a photoacid generator; and irradiating the coating film with light in a pattern. And dissolving and removing the irradiated portion of the coating film.
- the coating of the photosensitive polysilazane composition according to the present invention can be formed by a general coating method, such as dipping, roll coating, bar coating, brush coating, spray coating, flow coating, spin coating, or the like. It can be performed on an appropriate substrate such as a silicon substrate, a glass substrate, or the like. If the substrate is a film, gravure coating is also possible. If desired, a separate drying step for the coating film can be provided.
- a general coating method such as dipping, roll coating, bar coating, brush coating, spray coating, flow coating, spin coating, or the like. It can be performed on an appropriate substrate such as a silicon substrate, a glass substrate, or the like. If the substrate is a film, gravure coating is also possible. If desired, a separate drying step for the coating film can be provided.
- the coating film can be formed to a desired thickness by repeating the coating once or twice or more as necessary.
- the desired film thickness varies depending on the application, but for example, 0.5 to 2 / m for a photo resist, 0.5 to 4 m for an interlayer insulating film, and a color filter. In the case of no letter or black matrix, 0.3 to 3 m, etc. can be used as a guide.
- pre-bake heat-treat
- New Pre-baking process is general At a temperature of 40-200 ° C, preferably 60-120 ° C, for 10-180 seconds by hotplate, preferably 30-180 ° C. It can be run for 90 seconds, 1 to 30 minutes if using a clean oven, preferably 5 to 15 minutes.
- the coating film is irradiated with light in a pattern.
- a light source a high-pressure mercury lamp, a low-pressure mercury lamp, a metal halide lamp, an excimer laser, or the like can be used.
- light of 360 to 43 nm high-pressure mercury lamp
- light of 430 nm is often used.
- the energy of the irradiation light depends on the light source and the desired film thickness, but is generally 5 to 400 mj / cm 2 , preferably 10 to 2000 mj / cm 2 .
- a general photomask may be used to irradiate in a pattern, and such a photomask is well known to those skilled in the art.
- the irradiation environment may be an ambient atmosphere (in the air) or a nitrogen atmosphere, but an atmosphere having an increased oxygen content may be employed to promote the decomposition of polysilazane.
- the Si—N bond of the polysilazane is cleaved and reacts with the moisture in the atmosphere through a dangling bond state.
- Silanol ( S i — 0 H) bond is formed and polysilazane is decomposed.
- the exposed polysilazane composition may be brought into contact with water, preferably pure water.
- an aqueous alkali solution can be used as a developing solution.
- alkaline aqueous solution examples include aqueous solutions of tetramethylammonium hydroxide (TMAH), sodium silicate, sodium hydroxide, potassium hydroxide, and the like.
- TMAH tetramethylammonium hydroxide
- sodium silicate sodium hydroxide
- potassium hydroxide potassium hydroxide
- the time required for the development depends on the film thickness and the solvent, but is generally 0.1 to 5 minutes, preferably 0.5 to 3 minutes.
- the development temperature is generally from 20 to 50 ° C, and preferably from 20 to 30 ° C.
- the photo resist according to the present invention is of a positive type, the photo resist has a high resolution and has a high dry etching resistance.
- the photo resist according to the present invention has high oxygen plasma resistance, and is therefore very useful as a substitute material for a silicon-containing resist in a two-layer resist method.
- the lower layer or substrate is etched using the photo resist according to the present invention as a protective film. After cleaning, remove the used photo registry.
- the polysilazane may be dissolved and removed using the above-mentioned polysilazane solvent.
- the polysilazane film patterned according to the present invention is used while remaining as an inter-glove insulating film or the like, high heat resistance, low dielectric constant, transparency, What is necessary is just to convert it into a silica-based ceramics coating film that is excellent in such properties.
- the polysilazane film after development is allowed to stand, it is generally sufficient to leave it in an ambient atmosphere (in the air, at room temperature) for a long time, for example, one day or more.
- the firing temperature depends on the type of polysilazane used and the heat resistance of the substrate, electronic components, etc., and is generally 50 to 100 ° C., preferably 1 to 100 ° C.
- the temperature is preferably from 100 to 100 ° C, more preferably from 150 to 450 ° C.
- the baking time is generally 5 minutes or more, preferably 10 minutes or more.
- the firing atmosphere may be generally an ambient atmosphere (in the air), but an atmosphere in which the oxygen content and the partial pressure of Z or water vapor are enriched may be employed to promote the oxidation of polysilazane.
- the silica-based ceramic coating thus obtained can exhibit a dielectric constant of 5 or less, in some cases a dielectric constant of 3.3 or less, and a resistivity of 10 ' : i Q cm or more. .
- a conventional photo resist is not required in a patterning step of a ceramic film such as an insulating film, and the process is not required. Simplification is achieved. That is, in the conventional method, as shown in FIGS. 1A to 1F, (1A) a coating Z baking step for forming an insulating film on a substrate, and (1B) a resist is formed on the insulating film. Z pre-bake process, (1C) mask alignment / exposure process for exposing in a pattern through a photomask, (1D) resist development / post-bake process, C 1 E 2) An insulating film etching step and an (IF) resist attaching step are required.
- This solution was spin-coated (rotational speed: i500 rpm) on a silicon wafer to form a coating film.
- This coating film was dried with warm air at 70 ° C for 20 minutes, and then exposed to a KrF excimer laser beam having a wavelength of 248 nm through a photomask having a predetermined pattern.
- m JZ cm 2 irradiated after irradiation was immersed 2 minutes coating in pure water. After that, when the coating film was immersed in a 2% aqueous solution (developer) of tetramethylammonium hydroxide (TMAH) for 3 minutes, the light-irradiated portion of the coating film dissolved and originated from the photomask. Pattern was formed. The patterning accuracy was better than 0.75 m.
- the coated film after the patterning was further heated for 10 minutes at 170 ° C. in an air atmosphere by a hot plate in order to further dry and reduce the amount of degassing thereafter.
- the thickness of the coating film after the heat treatment was 0.45 ⁇ m.
- the silicon wafer having the patterned coating film is put into an asher (oxygen plasma ashing device), and is subjected to 500 milliliters (approximately 66.6 Pa). A high-frequency power of 13.56 MHz was applied, and the wafer was exposed to oxygen plasma for 10 minutes. Thereafter, the silicon wafer was taken out, and the film thickness of the coating film was measured. The measured value was 0.43 m, indicating a residual rate of about 96%. This indicates that the photosensitive polyvinyl silazane according to the present invention is useful as a photo resist. -Example 2
- the photoacid generator 3,3 ', 4,4'tetra (t-butylperoxycarbonyl) benzophenone was added to a 15% cyclohexane solution of polymethylsilazane to polymethylsilazane.
- This solution to which 5% by weight was added, was spin-coated (rotational speed: 1500 rpm) on a silicon wafer to form a coating film.
- This coating film was dried with warm air at 70 ° C for 20 minutes, and then irradiated with a KrF excimer laser beam of wavelength 248 nm through a photomask having a predetermined pattern for 100 m. after irradiation and J / cm 2 irradiation, crushed immersed 2 minutes coating in pure water.
- the coating film was immersed in a 2% aqueous solution of TMAH (developer) for 3 minutes, the light-irradiated portion of the coating film was dissolved to form a photomask-derived pattern.
- TMAH developer
- the coated film after patterning was further heat-treated at 170 ° C. for 10 minutes in an air atmosphere using a hot plate in order to further dry and reduce the amount of degassing thereafter.
- the thickness of the coating film after the heat treatment was 0.51 m.
- the silicon wafer having the patterned coating film is put into an asher, and 500 W (approximately 66.6 Pa) at 500 W, 13 W A high frequency power of 56 MHz was applied and the substrate was exposed to oxygen plasma for 10 minutes. Thereafter, the silicon wafer was taken out, and the film thickness of the coating film was measured. The measured value was 0.48 ⁇ m, indicating a residual rate of about 94%. This indicates that the photosensitive polymethyl razan according to the present invention is useful as a photo resist.
- Acrylic positive resist (TOPR: OFPR-800) was applied to a silicon wafer to form a coating film of about 2 m. This film was heated by a hot plate at 140 ° C. for 20 minutes in the air atmosphere.
- Photoacid generator 3,3 ', 4,4'-tetra (t-butylperoxycarbonyl) benzophenone was added to a 15% polyester hexyl solution of polymethylsilazane against polymethylsilazane. 5% by weight of the dye, and 10% by weight of the photosensitive dye 7 — acetylamino-141-trifluoroethylmarumaline was added to the polymethylsilazane.
- This solution was silicon-coated and spin-coated (rotation speed: 1500 rpm) to form a coating film. After this coating film was dried with warm air at 50 ° C. for 10 minutes, it was irradiated with light from a high-pressure mercury lamp at 50 mJ / cm 2 through a photomask having a predetermined pattern.
- the coating was immersed in pure water for 2 minutes. Thereafter, when the coating film was immersed in a 2% aqueous solution of TMAH (developer) for 3 minutes, the light-irradiated portion of the coating film was dissolved to form a pattern derived from the photomask.
- TMAH developer
- Preliminary firing of the patterned coating film at 150 ° C for 3 minutes using a hot plate, followed by firing for 1 hour in a 300 ° C clean oven. The coating was ceramicized.
- the film thickness of the fired film is baked film was 0.5 0 ⁇ m showed a resistivity 5 X 1 0 '4 and permittivity 3.0.
- the transmittance of the fired film was 99.9% for 50011111 and 99.1% for 400: 1111. This indicates that the photosensitive polysilazane according to the present invention is useful as a patternable interlayer insulating film having high insulation, low dielectric constant, and excellent transparency.
- This solution was spin-coated (rotational speed: 1500 rpm) on a silicon wafer to form a coating film. After this coating film was dried with warm air at 70 ° C. for 20 minutes, it was irradiated with light from a high-pressure mercury lamp at 50 mJ / cm 2 through a photomask having a predetermined pattern.
- the coating was immersed in pure water for 2 minutes. Thereafter, when the coating film was immersed in a 2% aqueous solution of TMAH (developer) for 3 minutes, the light-irradiated portion of the coating film dissolved to form a pattern derived from the photomask.
- TMAH developer
- the coated film after patterning was pre-baked by a hot plate at 150 ° C for 3 minutes, and then baked in a firing furnace at 400 ° C for 1 hour to convert the film into a ceramic. The thickness of the fired film was 2.5 m.
- the fired film exhibited a resistivity of 7 ⁇ 10 14 and a dielectric constant of 2.9.
- the transmittance of the fired film was 9.9% at 500 nm and 96% at 40011111. This indicates that the photosensitive polyvinyl razan according to the present invention is also useful as a patternable interlayer insulator having high insulation, low dielectric constant, and excellent transparency.
- This solution was spin-coated on a silicon wafer (at a rotation speed of 150 rpm) to form a coating film.
- the coating film was dried with hot air at 80 ° C. for 3 minutes, and then irradiated with light from a high-pressure mercury lamp at 50 mJZ cm 2 through a photomask having a predetermined pattern.
- the coating was immersed in pure water for 2 minutes. Thereafter, when the coating film was immersed in a 2% aqueous solution of TMAH (developer) for 3 minutes, the light-irradiated portion of the coating film was dissolved to form a pattern derived from the photomask. After pre-firing the patterned coating film at 170 ° C for 5 minutes by a hot plate, it was fired in a firing furnace at 400 ° C for 1 hour to convert the coating film into ceramics. The thickness of the fired film was 0.35 m.
- the fired film exhibited a resistivity of 5 XI 0 14 and a dielectric constant of 2.7.
- the photosensitive polyolefin loxazan according to the present invention is also useful as a patternable interlayer insulating film having high insulating properties and excellent low dielectric constant. This indicates that
- the polysilazane by adding a photoacid generator to polysilazane, the polysilazane is decomposed by irradiating light in a pattern, and the polysilazane film patterned by subsequent development Is obtained.
- the patterned polysilazane film can be used as it is as a photo resist. Since the photo resist according to the present invention is of a positive type, the resolution is high, and the oxygen resistance is higher than that of an organic material-based resist. In particular, since the polysilazane film according to the present invention has high oxygen plasma resistance, it contains silicon in the two-layer resist method. It is very useful as a substitute for a registry.
- the polysilazane film patterned according to the present invention by leaving or firing the polysilazane film patterned according to the present invention for a long period of time, it is possible to form a pattern excellent in high heat resistance, low dielectric constant, transparency, etc. suitable as an interlayer insulating film.
- the obtained ceramic ceramic coating is obtained.
- the dye can be decomposed at the time of baking the film after patterning, and the composition can be used in an interlayer insulating film such as a liquid crystal display device. As a result, a useful transparent ceramic ceramic coating can be obtained.
- a power filter having excellent heat resistance, insulation properties, and hardness and a good pattern accuracy and a black matrix can be produced. can do.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Silicon Polymers (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99970175A EP1164435B1 (en) | 1998-10-05 | 1999-10-05 | Photosensitive polysilazane composition and method of forming patterned polysilazane film |
US10/728,801 US20040081912A1 (en) | 1998-10-05 | 2003-12-08 | Photosensitive polysilazane composition and method of forming patterned polysilazane film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10/282697 | 1998-10-05 | ||
JP28269798 | 1998-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000020927A1 true WO2000020927A1 (fr) | 2000-04-13 |
Family
ID=17655886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1999/005498 WO2000020927A1 (fr) | 1998-10-05 | 1999-10-05 | Composition de polysilazane photosensible et procede de formation d'une couche mince de polysilazane a motif |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1164435B1 (ja) |
JP (1) | JP2000181069A (ja) |
KR (1) | KR100620263B1 (ja) |
TW (1) | TW495494B (ja) |
WO (1) | WO2000020927A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1239332A1 (en) * | 2000-08-31 | 2002-09-11 | Clariant International Ltd. | Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof |
WO2004010223A1 (ja) * | 2002-07-18 | 2004-01-29 | Az Electronic Materials (Japan) K.K. | 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法 |
WO2004019132A1 (ja) * | 2002-08-20 | 2004-03-04 | Az Electronic Materials (Japan) K.K. | 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法 |
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JP5154009B2 (ja) * | 2005-10-21 | 2013-02-27 | 株式会社ジャパンディスプレイイースト | 有機シロキサン系絶縁膜の製造方法、及び、この製造方法で製造した有機シロキサン系絶縁膜を層間絶縁として用いた液晶表示装置の製造方法 |
JP2007148258A (ja) * | 2005-11-30 | 2007-06-14 | Daicel Chem Ind Ltd | レジスト組成物 |
JP2007178885A (ja) * | 2005-12-28 | 2007-07-12 | Az Electronic Materials Kk | パターンおよび配線パターンならびにそれらの製造法 |
KR101390605B1 (ko) | 2006-09-25 | 2014-04-29 | 히타치가세이가부시끼가이샤 | 감방사선성 조성물, 실리카계 피막의 형성방법, 실리카계 피막, 실리카계 피막을 구비하는 장치 및 부재, 및 절연막용 감광제 |
TWI452419B (zh) * | 2008-01-28 | 2014-09-11 | Az Electronic Mat Ip Japan Kk | 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法 |
US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
JP2018028630A (ja) * | 2016-08-19 | 2018-02-22 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ブラックマトリックス用組成物、およびそれを用いたブラックマトリックスの製造方法 |
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1999
- 1999-10-04 JP JP28310699A patent/JP2000181069A/ja active Pending
- 1999-10-04 TW TW088117059A patent/TW495494B/zh not_active IP Right Cessation
- 1999-10-05 WO PCT/JP1999/005498 patent/WO2000020927A1/ja active IP Right Grant
- 1999-10-05 KR KR1020017003863A patent/KR100620263B1/ko not_active IP Right Cessation
- 1999-10-05 EP EP99970175A patent/EP1164435B1/en not_active Expired - Lifetime
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1239332A1 (en) * | 2000-08-31 | 2002-09-11 | Clariant International Ltd. | Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof |
EP1239332A4 (en) * | 2000-08-31 | 2004-11-10 | Clariant Finance Bvi Ltd | PHOTOSENSITIVE POLYSILAZANE COMPOSITION, METHOD OF FORMING A PATTERN BASED ON THIS COMPOSITION AND METHOD FOR BURNING A COATING FILM FROM THIS COMPOSITION |
KR100793620B1 (ko) | 2000-08-31 | 2008-01-11 | 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 | 감광성 폴리실라잔 조성물 및 패턴화 층간 절연막의 형성방법 |
WO2004010223A1 (ja) * | 2002-07-18 | 2004-01-29 | Az Electronic Materials (Japan) K.K. | 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法 |
WO2004019132A1 (ja) * | 2002-08-20 | 2004-03-04 | Az Electronic Materials (Japan) K.K. | 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20010089282A (ko) | 2001-09-29 |
EP1164435A1 (en) | 2001-12-19 |
EP1164435A4 (en) | 2005-11-09 |
JP2000181069A (ja) | 2000-06-30 |
EP1164435B1 (en) | 2011-12-14 |
KR100620263B1 (ko) | 2006-09-07 |
TW495494B (en) | 2002-07-21 |
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