WO1999049566A1 - Circuit oscillant - Google Patents

Circuit oscillant Download PDF

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Publication number
WO1999049566A1
WO1999049566A1 PCT/JP1999/001322 JP9901322W WO9949566A1 WO 1999049566 A1 WO1999049566 A1 WO 1999049566A1 JP 9901322 W JP9901322 W JP 9901322W WO 9949566 A1 WO9949566 A1 WO 9949566A1
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WO
WIPO (PCT)
Prior art keywords
transistor
base
current source
resistor
constant current
Prior art date
Application number
PCT/JP1999/001322
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English (en)
Japanese (ja)
Inventor
Masatoshi Tsuji
Hiroyuki Ashida
Tamotsu Suzuki
Satoshi Kawahara
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO1999049566A1 publication Critical patent/WO1999049566A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H03B5/06—Modifications of generator to ensure starting of oscillations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/362—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0034—Circuit elements of oscillators including a buffer amplifier

Definitions

  • the present invention relates to an oscillating circuit using a piezoelectric vibrator such as a crystal vibrator, which operates with a low-voltage power supply and obtains a stable frequency and constant amplitude oscillation output with low power consumption.
  • Oscillation circuits using piezoelectric vibrators, such as quartz vibrators, are often used as standards for the frequency, time, etc. of various electronic devices.
  • piezoelectric vibrators such as quartz vibrators
  • the power is intermittently turned on and communication with the base station is performed to check whether or not there is an incoming call.
  • the method switches to continuous energization, that is, performs a so-called intermittent operation, thereby reducing power consumption.
  • FIG. 1 7 is an electric circuit diagram showing a general configuration of a temperature compensated crystal oscillator used as such a crystal oscillator circuit (T CXO), T R is transistor evening NPN type, R c is the collector resistor , R E is Emitsu evening resistance, Rt, R 2 is dividing resistors, C !, C 2 is a capacitor, X is a crystal oscillator, R T, CT resistor and a capacitor showing the characteristics of the temperature compensation circuit artificially It is.
  • B is a battery
  • Sw is a switch
  • Cc is a coupling capacitor to a load circuit.
  • the potential at the voltage dividing point is applied to the crystal resonator X, the temperature compensation resistor R T , and the temperature compensation capacitor C T , and also to the capacitors C 2 , so that the oscillation operation as a crystal oscillation circuit Is started.
  • Oscillation signal is output to the load circuit through a coupling capacitor C c connected to the collector.
  • the oscillation output takes a considerably long oscillation rise time T until the oscillation output enters the oscillation state at the specified output voltage level and the specified oscillation frequency ( ⁇ lppm). in need of s.
  • Figure 1 8 is the state, shows the crystal oscillation circuit, the oscillation rise time T s is usually from 4 takes 5 about ms time.
  • the oscillation rise time T s of this crystal oscillation circuit is orders of magnitude longer than oscillation circuits using other piezoelectric vibrators such as ceramic vibrators. It is a problem.
  • oscillation circuits such as crystal oscillation circuits have a so-called discrete configuration in which individual components are assembled to form a circuit, and there has been a limit to miniaturization. For this reason, there is a problem in terms of downsizing when using an oscillation circuit such as a crystal oscillation circuit in a portable electronic device that is being miniaturized and weighed.
  • the oscillation output is not in the oscillation state at the specified output voltage level and the specified oscillation frequency, and the oscillation output cannot be used as a reference frequency signal such as the transmission / reception frequency. Therefore, it is necessary to raise the oscillation output to the specified oscillation level and the specified oscillation frequency as soon as possible after the application of the power supply voltage Vcc.
  • power is consumed during the oscillation rise time T s, and the power consumed during this time is invalid power. Therefore, it is necessary to reduce this time T s in order to effectively use the power supply capacity.
  • Oscillation circuits such as the so-called discrete crystal oscillation circuit, in which individual parts are assembled to form a circuit, have reached the limits of their miniaturization and weight reduction. Therefore, it is necessary to reduce the size of the oscillation circuit itself by another different method so that it can be applied to portable electronic devices.
  • the present invention provides an oscillation circuit having a reduced oscillation rise time T s required for an oscillation output to enter an oscillation state at a specified output voltage level and a specified oscillation frequency after application of a power supply voltage. Aim.
  • the oscillation rise time T s is shortened, the dependency of the oscillation frequency on the power supply voltage is improved, and even when the ambient temperature changes, the changes in the oscillation output level and the oscillation output amplitude are significantly reduced.
  • the purpose is to obtain an oscillation circuit with improved temperature dependence of amplitude.
  • the oscillation rise time T s required for the oscillation output to enter the oscillation state at the specified output voltage level and the specified oscillation frequency ( ⁇ lppm) after the power supply voltage is applied is:
  • the oscillation rise time T s of the oscillation circuit using the conventional emitter resistor is much shorter.
  • the oscillation output becomes an oscillation state at a specified output voltage level and a specified oscillation frequency ( ⁇ lppm).
  • the required oscillation rise time T s is significantly shorter than the oscillation rise time T s of the oscillation circuit using the conventional emitter resistor, and both the oscillation level and oscillation frequency in the steady oscillation state are stable. Power consumption does not increase.
  • the oscillation circuit according to claim 3 includes a piezoelectric vibrator, a first transistor having the piezoelectric vibrator connected to a base, a second transistor connected in series with the first transistor, and a power supply.
  • a resistor connected between the base of the first transistor and the base of the second transistor to apply a bias potential to each other; a first capacitor provided between the base of the first transistor and the emitter; A constant current source provided between the emitter of the first transistor and one of the power supply terminals; a second capacitor provided in parallel with the constant current source; and a collector connected between the collector of the second transistor and the other power supply terminal.
  • an output resistor provided.
  • the second transistor is cascode-connected to the collector of the first transistor, and the collector of the second transistor is connected to the collector of the second transistor.
  • Oscillation output is taken out from the connection point with the collector resistance, so that the buffer amplification function of the second transistor can affect the load fluctuation when the load connected to the output terminal fluctuates. Is alleviated by the second transistor functioning as a buffer amplifier. Therefore, even if there is a load change, the oscillation of the oscillation circuit In addition, the oscillation frequency can be further stabilized.
  • the oscillation circuit wherein: a piezoelectric vibrator; a transistor having the piezoelectric vibrator connected to a base; a resistor connected between a power supply and a bias potential applied to a base of the transistor; A first capacitor provided between the base of the transistor and the emitter; a constant current source provided between the emitter of the transistor and one of the power supply terminals; a second capacitor provided in parallel with the constant current source And output from a connection point between the emitter of the transistor and a constant current source.
  • the same effect as in claim 2 can be obtained, and further, the output signal extraction point of the crystal oscillation circuit is extracted from the emitter side of the transistor. This eliminates the need for a collector resistor provided between the collector of the transistor and the power supply, thereby contributing to downsizing and weight reduction of the crystal oscillation circuit.
  • the oscillation circuit according to claims 6 and 7 includes: a piezoelectric vibrator; a first transistor connected to the base of the piezoelectric vibrator; a second transistor connected in series with the first transistor; (2) a bias constant current source provided between the base of the transistor and one of the power supply terminals; a base between the base of the first transistor and the base of the second transistor; and a base and the other of the first transistor.
  • a bias resistor provided between the power supply terminals, a first capacitor provided between the base of the first transistor and the emitter, and provided between the emitter of the first transistor and the other power supply terminal.
  • An oscillation circuit comprising: a bias resistor; and a temperature compensation circuit provided at a base of the second transistor; and a temperature compensation circuit in the oscillation circuit, wherein the temperature compensation circuit includes a base and the other of the first transistor.
  • a diode provided in series with a bias resistor provided between power supply terminals of the first and second transistors; and a transistor provided between the base of the second transistor and the other power supply terminal, and an emitter connected to the other power supply terminal.
  • a resistor connected between the base and the emitter of the transistor and between the base and the collector, and a resistor connected to the collector of the transistor.
  • the ambient temperature of the oscillation circuit fluctuates, by providing a diode and a transistor connected in series to the bias resistor and a temperature compensation circuit composed of the resistor connected to the transistor, the ambient temperature can be reduced. for changes in temperature to eliminate the variation of the collector voltage V c and emitter evening voltage V E of the transistor T R, to ensure a constant output amplitude is effectively available without restricting the ability of the oscillator circuit .
  • the oscillation circuit according to claims 8, 9, 10, and 11 is the oscillation circuit according to claims 1 to 7, wherein the current setting resistor of the constant current source is a resistor having a negative temperature characteristic.
  • a constant current source comprising a reference current constant current source having a current setting resistor having a negative temperature characteristic, and a current mirror circuit receiving the reference current of the reference current constant current source; and
  • the current setting resistor is constituted by a thin film resistor.
  • the oscillation circuit according to claim 13 is the oscillation circuit according to claims 1 to 7, wherein the piezoelectric vibrator is a crystal resonator.
  • a portable communication device includes any one of the crystal oscillation circuits according to claims 1 to 7.
  • the oscillation of the built-in oscillation circuit rises quickly, so that the consumption of invalid power consumption is reduced.
  • FIG. 1 is a diagram showing a crystal oscillation circuit according to a first embodiment of the present invention
  • FIG. 2 is a diagram showing an AC equivalent circuit of the crystal oscillation circuit of FIG. 1
  • FIG. FIG. 4 is a diagram showing a circuit diagram
  • FIG. 4 is a diagram showing a crystal oscillation circuit according to a second embodiment of the present invention
  • FIGS. 5 (a) and 5 (b) are diagrams showing specific numerical values of respective elements.
  • Invented crystal oscillation circuit and 6 (a) and 6 (b) are diagrams showing a conventional crystal oscillation circuit in which the specific numerical values of each element are set, and the oscillation rising characteristics thereof.
  • FIG. 8 is a diagram illustrating a crystal oscillation circuit according to a third embodiment of the present invention
  • FIG. 8 is a diagram illustrating a crystal oscillation circuit according to a third embodiment of the present invention
  • FIG. 8 is a diagram illustrating a crystal oscillation circuit according to a fourth embodiment of the present invention
  • FIG. 10 is a diagram illustrating a crystal oscillation circuit according to an embodiment.
  • FIG. 10 is a diagram illustrating power supply voltage-frequency characteristics of the crystal oscillation circuit according to the fifth embodiment of the present invention.
  • FIG. FIG. 12 is a diagram illustrating a crystal oscillation circuit according to a sixth embodiment
  • FIG. 12 is a diagram illustrating a voltage relationship of the crystal oscillation circuit according to the sixth embodiment of the present invention
  • FIG. FIG. 14 is a diagram illustrating a crystal oscillation circuit according to a seventh embodiment.
  • FIG. 14 is a diagram illustrating a crystal oscillation circuit of a preceding example according to a seventh embodiment of the present invention.
  • FIG. 15 is a diagram illustrating a change in output level with respect to a change in temperature in FIG. 15.
  • FIG. 15 is a diagram illustrating a change in output level with respect to a change in temperature in the crystal oscillation circuit according to the seventh embodiment of the present invention.
  • FIG. 16 is a diagram illustrating an integrated crystal oscillation circuit according to an eighth embodiment of the present invention
  • FIG. 17 is a diagram illustrating a conventional crystal oscillation circuit
  • FIG. 18 is a diagram illustrating a conventional crystal oscillation circuit.
  • FIG. 19 is a diagram illustrating the oscillation rise characteristics of an oscillation circuit.
  • FIG. 19 is a diagram illustrating a configuration of a mobile phone including a crystal oscillation circuit as a component.
  • Figure 1 is a diagram illustrating a crystal oscillation circuit of the present invention, the constant current source I is connected between ground and evening emitter of the transistor T R.
  • Conventional Example 1 7 differs from, a point in which a constant current source I in place of the emitter evening resistor R E, other configuration is the same as FIG 7.
  • the power supply voltage Vcc is divided by resistors R 2 min, the potential dividing point is supplied to the base of the tiger Njisu evening T kappa.
  • the transistor T R is running, the constant current is set to flow in the collector resistor R c :, transistor T R, a predetermined DC by ⁇ scan is set.
  • the potential at the voltage dividing point is: R T, is applied to the capacitor c l3 c 2 while being applied to a temperature compensating capacitor C T, oscillation of the crystal oscillation circuit is started.
  • Oscillation signal appearing as a variation in the voltage drop across the collector resistance Rc is outputted to the load circuit via the coupling capacitor C c connected to the collector resistor R c.
  • the oscillation rise time T s required for the oscillation output to oscillate at the specified output voltage level and the specified oscillation frequency ( ⁇ lppm) is increased.
  • the oscillation rise time T s of the crystal oscillation circuit using the conventional emitter resistor is significantly shorter.
  • the oscillation level and the oscillation frequency in the steady oscillation state are stable, and the power consumption does not increase.
  • FIGS. 2 and 3 are diagrams showing an AC equivalent circuit of the crystal oscillation circuit.
  • the temperature compensation resistor R T and capacitor C T are omitted.
  • the impedance Z on the circuit side as viewed from the crystal oscillator terminal of the crystal oscillator circuit is as follows when the parallel circuit of capacitors and resistors is obtained by performing serial circuit conversion sequentially.
  • the equivalent circuit of the crystal oscillation circuit is further expressed as shown in FIG.
  • the equation for this I impedance Z is circuit side viewed from the crystal oscillator terminal of the crystal oscillator circuit, the loss resistance R P by the circuit resistance component of the real term, a negative resistance R N, the imaginary term reactance Yun scan j / indicates that it has a w C 3.
  • L x and R x in FIG. 3 indicate the inductance and resistance of the crystal unit X, respectively.
  • the loss resistance R P is different from the polarity negative resistance R N, to offset the negative resistance R N, which substantially reduces the magnitude of the negative resistance R N.
  • the constant current source I functions to pass a constant current and exhibit an extremely large resistance value when the magnitude of the current changes.
  • the AC resistance of the constant current source I is extremely high and theoretically infinite, but in practice it takes a limit value due to the structure of the circuit element.
  • an alternating current with an oscillation frequency flows superimposed on a constant DC current.
  • a current obtained by superimposing an AC current with an oscillation frequency on a constant DC current. of alternating current of the oscillation frequency flows through the capacitor C 2 connected in parallel to the constant current source I, whereas the DC current will flow a constant current source I.
  • the value of the negative resistance is substantially increased, and the difference between the absolute value of the effective resistance (R ⁇ + R p) and the absolute value of the negative resistance (R N ) in the oscillation circuit is increased. Is accelerated. For this reason, in the present invention in which the constant current source I is provided at the emitter of the crystal oscillation circuit, the oscillation rise time T s is smaller than the oscillation rise time T s of the crystal oscillator circuit using the conventional emitter resistor RE. Very short It will be.
  • Figure 4 is a diagram illustrating a crystal oscillation circuit of the present invention, the second transistor T RB cascode connected to the collector of the first embodiment and is tiger 1 Njisu evening T R, the second transistor T thereby to take out the oscillation output from a connection point between the collector and the collector resistor R c of the RB, the second transistor T RB as shown in Fig resistor R B and capacitor C B for potential stability for Paiasu Accordingly Connected to the base.
  • Other points including the constant current source I is connected between ground and evening Emitsu transistor T R, are the same as FIG. 1, the same parts as FIG. 1 are denoted by the same reference numerals I have.
  • the oscillation rise time Ts is longer than the oscillation rise time T s of the conventional crystal oscillator circuit using the emitter resistor. It is much shorter than in the case of the crystal oscillation circuit in Fig. 1.
  • connection point of the transistor T the second transistor T RB cascode connected to the collector of the R, co Lek evening and collector resistance Rc of the second transistor T KB The second transistor TRB functions as a buffer amplifier because the configuration is such that the oscillation output is extracted from the second transistor. With this function, when there is a change in the load connected to the output terminal, the effect of the load change is reduced by the second transistor TRB functioning as a buffer amplifier.
  • FIGS. 5 (a) and 5 (b) show specific numerical values of each element constituting the oscillation circuit in order to demonstrate the oscillation rise of the crystal oscillation circuit of the second embodiment shown in FIG.
  • FIG. 3 is a diagram illustrating a crystal oscillation circuit and its oscillation rising characteristics.
  • Figure 6 (a) Similar to the crystal oscillation circuit of the conventional example constant current source I to FIG. 6 (b) is compared, which was replaced with E honey evening resistor R E, otherwise all those 5 of (a) Is the same as The oscillation rise characteristics in Figs. 5 (b) and 6 (b) are both based on actual measurements.
  • FIG. 5 (b) the as apparent from FIG. 6 (b), the time in which the output oscillation frequency from application of power is within the soil 1 ppm provisions, namely oscillation rise time T s, as shown in FIG. 6 (b whereas a 4. 4 ms in the crystal oscillation circuit using a conventional example as well as emitter evening resistance R E of), crystal quartz Fukairo using the constant current source I of the present invention shown in FIG. 5 (b) Is 1.4 ms.
  • the ratio between the two is about 3: 1, which indicates that the effect of improving the oscillation rise time T s of the crystal oscillation circuit using the constant current source I of the present invention is extremely large.
  • FIG. 7 is a diagram illustrating a crystal oscillation circuit of the present invention, the point that differs with FIG. 1 is a first embodiment, taken from Emidzu evening side of the transistor T R via an oscillating output signal coupling capacitor C c In addition, the collector resistance is eliminated.
  • Other points including the constant current source I is connected between ground and evening emitter of the transistor T R, are the same as FIG. 1, the same parts as FIG. 1 are denoted by the same reference numerals I have.
  • the oscillation rise time Ts is longer than that of the conventional crystal oscillator circuit using the emitter resistor.
  • the fact that it is much shorter than Ts is the same as the crystal oscillation circuit in FIGS. 1 and 4.
  • FIG. 8 is a diagram illustrating a crystal oscillation circuit of the present invention, connects the constant current source IB for biasing in place of the resistance R B for by ⁇ scan of FIG. 4 is a second embodiment.
  • Other points including the constant current source I is connected between ground and evening Emitsu transistor T R, are the same as FIG. 4, the same parts as FIG. 4 are designated by the same reference numerals I have.
  • the oscillation rise time T s is longer than the oscillation rise time T of the conventional crystal oscillator circuit using the emitter resistor. s , and when the load connected to the output terminal fluctuates, the effect of the load fluctuation is mitigated by the second transistor T RB functioning as a buffer amplifier. This is the same as the crystal oscillation circuit in FIG.
  • the base bias voltage of the power supply voltage Vcc transistor even when fluctuates T R and tiger Njisu evening T RB in the embodiment is to be maintained at a constant value, significantly reducing the change in the oscillation frequency of the crystal oscillation circuit can do. In other words, the power supply voltage dependence of the oscillation frequency change of the crystal oscillation circuit is improved.
  • the fluctuating mechanism is not always clear because various parameters are involved.
  • the input impedance of the transistor in the crystal oscillation circuit varies with the bias setting, and the parasitic impedance of each transistor terminal Since the capacitance changes with the bias voltage, it is considered that these changes affect the crystal oscillator circuit and change the oscillation frequency.
  • the bias constant current source IB can be configured as, for example, a band-gap type constant current circuit together with the constant current source I provided between the emitter of the transistor TB and the ground, and many of the constituent circuit elements for that can be shared. However, the increase in the number of components due to the provision of the constant current source IB for biasing is small.
  • a constant voltage source V B such as
  • the function when the constant voltage source VB is provided is the same as that when the constant current source IB for noise is provided.
  • FIG. 10 is a diagram showing power supply voltage-frequency characteristics to show the degree of improvement of the power supply voltage dependency of the change in the oscillation frequency of the crystal oscillation circuit of the fourth embodiment shown in FIG.
  • the solid line is the characteristic in the constant current bias of the present embodiment
  • the broken line is the characteristic in the resistance division bias of FIG. 4 of the second embodiment shown for comparison. Note that these characteristics are based on actual measurements.
  • the change in the oscillation frequency with respect to the change in the power supply voltage is improved in the crystal oscillation circuit of the present embodiment.
  • the oscillation frequency since the change of the oscillation frequency with respect to the change of the power supply voltage is small, even if the power supply voltage when the user uses the crystal oscillation circuit is slightly different from the predetermined value, the oscillation frequency may be shifted. The problem is also improved.
  • the fourth embodiment according to the constant current source I B showed a fifth embodiment according to the constant voltage source V B, the a constant current source I B, means for keeping the base bias to a constant value of transistors T R and / Ah Rui transistor T RB by the constant voltage source V B is 1
  • the second embodiment in FIG. 4, the second embodiment in FIG. 4, and the third embodiment in FIG. 7 can be similarly applied.
  • the constant current source IB and the constant voltage source V B those that can keep the transistors T R and / or transistor T RB total one spy ⁇ scan by a constant value.
  • FIG. 11 is a diagram showing a crystal oscillation circuit of the present invention, and FIG. water crystal oscillator circuit, a diode D 1 to the bias resistor R 2 connected in series, Trang Soo evening T RC, between the collector and base of the transistor, between the base and emitter evening, is it then connected to ⁇ beauty collector
  • a temperature compensation circuit consisting of resistors R 3 , R 4 , and R 5 is provided.
  • Other points are the constant current source I is connected between ground and evening Emitsu transistor T R, including Umate that constant current source IB is provided in the bias circuit is the same as FIG. 8 8 are given the same reference numerals.
  • the oscillation rise time T S of the crystal oscillation circuit is significantly shorter than that of the conventional crystal oscillation circuit, and the oscillation frequency of the crystal oscillation circuit It has excellent characteristics such as the power supply voltage dependence of the change is remarkably improved, but there is a point that should be further improved against temperature change.
  • transistor TR by a change of the collector voltage Vc and Emitsu evening voltage V E of the transistor T R due to a change in TRB total one Subaiasu voltage, the output level V 0ut crystal oscillation circuit is changed, also the Affects output amplitude. Further, in the crystal oscillation circuit, in order to work properly oscillation, emitter evening upper limit voltage higher than a certain value around the voltage VE, the lower limit voltage v c - v E, be set aside 0- VE is necessary. However, when the ambient temperature varies, Emitsu evening voltage V E of the transistor T R, a change of the collector voltage Vc, the upper limit voltage, a lower limit voltage V. 1 VE, 0—Because VE is affected, the emission voltage V
  • the problem of this fluctuation is not limited only to changes in ambient temperature, variations in the constant-current sources IB for bias, also generated by partial variations of resistors RR 2 for bias.
  • the crystal oscillator circuit of Figure 8 is a fourth embodiment, a diode D 1 connected in series with Baia scan resistor R 2, the transistor T RC, the tiger Njisu evening between the collector and the base, the base and between the emitter evening, and by providing a temperature compensation circuit composed of connected resistors R 3, R 4, R 5 Prefecture collector, the collector of the transistor T R to changes in ambient temperature Voltage Vc and emission voltage
  • V V + V -V (1)
  • 3v BE3 is the temperature coefficient of a normal transistor.
  • Emitting evening voltage Ec of the transistor T R when ignoring the base current of the transistor,
  • VE -VBEI + (Vi-Vf ) XR 2 / (R1 + R2) + Vf
  • Resistor R 3 is, it is possible to reduce the circuit configuration, the voltage V and against the variation in current IB! Fluctuation is small.
  • the collector voltage Vc of the transistor TR is Vc V! — V BE2 and the emitter voltage VE is
  • V E (V.-Vf) x R 2 / (R1 + R2) + Vf, so even if the current value of the constant current source IB for bias varies, the collector voltage V c and the emitter voltage variation of V E can be reduced.
  • VI VA + (1 + R 4 / R 5 ) XVBE3 + R 3 12
  • the collector voltage Vc of the transistor TH is expressed as Vc Vi—V BE2
  • the temperature was selected as 27 ° C as the standard temperature, ⁇ 30 ° C as the low temperature, and 75 ° C as the high temperature.
  • the bias resistance R 2 A temperature compensation circuit consisting of a diode D 1 connected in a column, a transistor T RC , a collector and a base of this transistor, a base and an emitter, and resistors R 3, R 4 and R 5 connected to the collector respectively.
  • the temperature compensation circuit consisting of R 5 eliminating the variation of the collector voltage Vc and Emitsu evening voltage V E of the transistor T R with respect to changes in ambient temperature is not limited to the above embodiments, the Besubai ⁇ scan circuit
  • the present invention can be similarly applied to a crystal oscillation circuit provided with a constant current source IB, and can achieve the same effect.
  • FIG. 13 is a diagram illustrating a crystal oscillation circuit of the present invention, a constant current source I which bets Rungis evening provided between ground and evening emitter of T R in FIG. 8 is a fourth embodiment, the constant of bias a current source IB, together with the first constant current source I 1 and specifically shown second as a constant current source I 2, the current setting resistor as having a negative temperature coefficient, the current flowing through the Emitsu evening transistor T R This is an improvement in temperature characteristics.
  • Other points are the same as those in FIG. 8, and the same parts as those in FIG. 8 are denoted by the same reference numerals.
  • the first constant current source I1 includes two constant current sources. While the constant current source, with the PNP transistor Q 6 is connected between the power supply V cc bias resistor Rt, constant voltage to the base of the transistor Q 6 is applied .
  • the transistor Q 6 functions as a constant current source when a constant voltage V: is applied to the base, and, like the bias constant current source IB in FIG. 8, the constant current flows through the bias resistors R! And R 2. To set the base bias of each transistor T R , T RB to a constant voltage.
  • the second constant current source 1 2 is connected collector and base, an N PN-type transistor Q 8 to Emitsu evening is grounded, is connected between ground and Emitsu evening transistor T R, base - scan said transistors Q It consists of 8 total Ichisu interconnected with NPN-type transistor Q 9 Metropolitan constitute a current mirror first circuit by the transistor Q 8 and the transistor Q 9. These transistors Q 8 and Q 9 have the same characteristics as a pair transistor. Then, as the input of the current mirror first circuit, the first reference current I R is a constant current from the constant current source I 1 is supplied.
  • the reference current I R flowing even minute basis, as the collector current of the transistor Q 8 is substantially equal to the reference current I R automatically biased, the voltage corresponding to the condition flowing the reference current I kappa collector occurs between the transistor Q 8 total Ichisu-Emidzu evening. This voltage becomes the transistor Q 9 with the same characteristics applied to the base of the transistor Q 9 is biased in the same Ichijo matter, and the reference current I R is the collector of the transistor Q 9 Currents of the same value flow and exhibit constant current characteristics.
  • the first constant current source current setting resistor R 6 for I 1 described above is a crystal oscillation circuit of the prior art example, in order to achieve an integrated circuit using a part of the transistor model, typically, the base one gas diffusion layer The diffusion resistance used is used.
  • the diffusion resistance using this base diffusion layer has a positive temperature coefficient, it becomes a factor for changing the current value of the constant current source according to the change in the ambient temperature.
  • the transistors constituting the constant current source with a current setting resistor R 6, the Pace Emitsu evening between voltage, various parameters Isseki pertains such DC current amplification factor, the temperature coefficient of the whole transistor It has a positive value, which is also a factor that changes the current value of the constant current source according to the change in the ambient temperature.
  • a current setting resistor R 6 diffusion resistance Keru Contact the crystal oscillation circuit of the prior example using the diagrams showing the peak value of the change in output level with respect to a change in temperature.
  • actual measured values are shown by taking the case where the power supply voltage Vcc is 5.5 v, 3.3 v, 3.0 v, or 2.7 v as an example.
  • the output voltage level of the crystal oscillator circuit drops significantly.
  • the current setting resistor of the first constant current source I 1 as R 6 by that you use a resistor having a negative temperature coefficient, regardless of the output voltage level to the ambient temperature, is intended to stabilize.
  • the current setting resistor R 6 having a negative temperature coefficient specifically, A thin film resistor formed by a CVD method or the like is used. There are various types of thin film resistors, and among them, a polysilicon resistor is preferable.
  • a resistor having a negative temperature coefficient such as a polysilicon resistor
  • the transistor forming the constant current source together with the current setting resistor R 6 is as described above.
  • various parameters such as the base-emitter voltage and the DC current gain are related, the temperature coefficient of the transistor as a whole has a positive value.
  • the influence of the change in the current is canceled, and the change in the current value of the constant current source is suppressed.
  • the output voltage level of the crystal oscillation circuit becomes stable over a wide temperature range. This is shown in Figure 15.
  • FIG. 4 is a diagram showing the peak values. In the figure, measured values are shown by taking the case of 3.0 V as an example of the power supply voltage Vcc. As is apparent from the figure of this, the crystal oscillation circuit of the present invention using a poly-silicon resistor into a current setting resistor R 6, compared to the prior example, the output voltage level over a wide range are stable You can see that.
  • the seventh embodiment of FIGS. 1-3 even when the ambient temperature of the crystal oscillator is varied, the first current setting resistor R 6 of the constant current source I 1 and the resistance of the negative temperature characteristic By making the change in the current value of the constant current source due to temperature extremely small, the output voltage level can be oscillated stably over a wider range than in the preceding example. Therefore, the oscillation output of the crystal oscillation circuit stably starts regardless of the ambient temperature. I can do it. Also, extremely small to Runisaishi changes due to temperature in the current value of the constant current source, without special additional circuit such as a feedback circuit, simply using the resistance of the negative temperature coefficient as the current setting resistor R 6 Often, the circuit configuration can be simplified. In addition, since the output voltage level of the crystal oscillation circuit is stable regardless of the ambient temperature, there is no need to allow for a margin for the circuit current value, and the current value of the current source can be reduced. Can play.
  • the current setting resistor R 6 of the first constant current source I 1 which is a constant current source for the reference current, is a resistor having a negative temperature characteristic, and the temperature of the current value of the constant current source is
  • the application to the crystal oscillation circuit of FIG. 8 of the fourth embodiment has been described.
  • the is possible to stabilize the output voltage level of the crystal oscillator circuit is not limited to the above embodiment, as the crystal oscillation circuit of the type providing a transistor T R of Emitsu evening and the constant current source I and the ground applied Is something that can be
  • FIG. 1 is a diagram showing a crystal oscillation circuit of the crystal oscillation circuit of the present invention in which circuit components are integrated in the same semiconductor substrate to form an IC configuration.
  • circuit components such as transistors, resistors, and capacitors in a two-dot chain line frame denoted by IC are integrated on the same semiconductor substrate. Elements corresponding to those in FIG. 4 are denoted by the same reference numerals.
  • the transistor Q 3 , transistor Q 5 , and constant current source I correspond to the constant current source I in Fig. 4 and form a specific constant current circuit that supplies a DC constant current to the emitter circuit of the transistor TR. are doing.
  • Transistor Q 3 transistor Q 5 is a current mirror first connection, the current of the tiger Njisu evening Q 3 is proportional to the current of the transistor Q 5, transistor Q 5 of the current is constant current source I!
  • the emitter evening circuit of the transistor T R is stable DC constant current Is supplied.
  • the transistor Q 4 are constitutes a part of a diode-connected and both the voltage dividing resistor and the resistor R 2.
  • E is a ground line.
  • the capacitor contact, C 2 and C c is not subject to integrated with the quartz crystal resonator X, depending on the specification of the crystal oscillator, or according to the condition of the load, the capacitor contact , C 2 , and C c are selected so as to be appropriate.
  • FIG. 4 shows an IC configuration in which the circuit components are integrated on the same semiconductor substrate for the crystal oscillation circuit of FIG. 4 which is the second embodiment, but the other first embodiment (FIG. 1) ), The third embodiment (FIG. 7), the fourth embodiment (FIG. 8), the fifth embodiment (FIG. 9), the sixth embodiment (FIG. 11), and the seventh embodiment (FIG. 13).
  • circuit components are integrated into the same semiconductor substrate to form an IC, but a portable type is used.
  • the crystal oscillation circuit can be made smaller, lighter, and more compact so that it can be applied to electronic equipment.
  • the negative resistance can be substantially increased, the oscillation rise time T S can be shortened, and various characteristic effects can be obtained.
  • the negative resistance increases, the oscillation level and oscillation frequency during continuous oscillation stabilize, and they hardly fluctuate due to external factors.
  • the base bias voltage of the transistor is kept constant even when the power supply voltage fluctuates, the change in the oscillation frequency of the crystal oscillation circuit can be significantly reduced. That is, the power supply voltage dependency of the oscillation frequency change of the crystal oscillation circuit is improved.
  • the transistors and by providing a temperature compensation circuit comprising the same as that connected to the resistor to the transistor, the collector voltage Vc and Emitta voltage V E of the transistor T R with respect to a change in ambient temperature eliminate the variation, the output dynamic range Vcc- V 0U T, can be sufficiently ensured V c- V OUT, it can be effectively utilized without limiting the ability of the crystal oscillation circuit.
  • the crystal oscillation circuit a constant current source I B constituting the resistors R i, it is possible to permit field Rakki of R 2, it is easy to select the elements constituting the crystal oscillation circuit.
  • the current setting resistor R6 of the constant current source for the reference current is set to a resistor with a negative temperature characteristic, so that the change in the current value of the constant current source with temperature is extremely small.
  • the output voltage level can be oscillated stably over a wider range than in the preceding example. Therefore, the oscillation output of the crystal oscillation circuit can be stably started regardless of the ambient temperature.
  • a special additional circuit such as a feedback circuit is not required, and only a resistor having a negative temperature coefficient may be used as a current setting resistor. The configuration can be simplified.
  • the output voltage level of the crystal oscillation circuit is stable regardless of the ambient temperature, it is not necessary to allow for a margin in the circuit current value, and the current value of the current source can be reduced.
  • the equivalent series resistance R x increases with the downsizing of the crystal unit in the future, it can be absorbed by the substantially increased negative resistance, so that the crystal oscillator can be reduced in size and weight.
  • the equivalent series resistance varies due to the substantially increased negative resistance.
  • the temperature compensation type crystal oscillation circuit TCXO which compensates and uses the frequency temperature characteristic has been described as an example.
  • the present invention is not limited to this.
  • a variety of crystals such as the package crystal oscillator circuit SPX0 used directly, the voltage controlled crystal oscillator circuit Vcxo that can change or modulate the output frequency by an external control voltage, and the ocxo that uses temperature control in a thermostatic chamber. It can be applied to oscillation circuits.
  • the crystal oscillation circuit described in detail in each embodiment is turned on intermittently in a standby state, communicates with a base station, confirms the presence or absence of an incoming call, and continuously operates when there is an incoming call.
  • This is used as an oscillation circuit of a portable communication device such as a portable telephone as shown in FIG.
  • the power consumption of the portable communication device can be reduced by using the crystal oscillation circuit according to each embodiment of the present invention as the oscillation circuit of the portable communication device.
  • a crystal oscillator circuit using a crystal oscillator as the oscillator is described.
  • the oscillator of this oscillator circuit is not limited to a crystal oscillator, but may be a ceramic oscillator or the like. Can be used. In this case, the same effects as those of the embodiments can be obtained.
  • the oscillation rise required for the oscillation output to be in the oscillation state at the specified output voltage level and the specified oscillation frequency after the power supply voltage is applied.
  • the time T s is significantly shorter than the oscillation rise time T s of the oscillation circuit using the conventional emitter resistor.
  • the oscillation rise time T s of the conventional crystal oscillator circuit is much longer than that of an oscillator circuit using other piezoelectric oscillators such as ceramic oscillators (typically about 4 to 5 ms).
  • This long oscillation rise time T s is a particular problem when applying a crystal oscillation circuit.
  • the oscillation output changes to an oscillation state at a specified output voltage level and a specified oscillation frequency.
  • the oscillation rise time T s required to achieve this can be significantly reduced, and the applicable range of the crystal oscillation circuit can be further expanded. Furthermore, the reactive power consumed naturally during the oscillation rise time Ts can be reduced.
  • the oscillation output becomes the prescribed output voltage level, the prescribed oscillation frequency (
  • the oscillation rise time T s required to achieve the oscillation state ( ⁇ lppm) is much shorter than the torsional rise time T s of the oscillation circuit using the conventional emitter resistor.
  • the oscillation level and oscillation frequency in the steady oscillation state are stable, and the power consumption does not increase.
  • the same effect as in claim 2 can be obtained, and further, the second transistor is cascode-connected to the collector of the first transistor, Oscillation output is taken out from the connection point between the collector of the second transistor and the collector resistor, so that the buffer amplification function of the second transistor allows the load connected to the output terminal to fluctuate.
  • the effect of the load fluctuation is mitigated by the second transistor functioning as a buffer amplifier. Therefore, even when there is a load change, the oscillation of the oscillation circuit can be performed more stably.
  • the same effect as in claim 2 can be obtained, and the output signal extraction point of the crystal oscillation circuit is set to the emitter of the transistor. Since it is taken out from the evening side, it is possible to eliminate the need for the collector resistor provided between the collector and the power supply at the transistor, thus contributing to downsizing and weight reduction of the oscillation circuit.
  • the same effect as in claim 3 can be obtained, and further, even when the power supply voltage Vcc fluctuates. Since the base bias voltage of each transistor is kept at a constant value, the change in the oscillation frequency of the oscillation circuit can be significantly reduced, and the power supply voltage dependence of the change in the oscillation frequency of the oscillation circuit can be improved.
  • the diode connected in series to the bias resistor, the transistor, and the transistor are various.
  • a temperature compensation circuit comprising a resistor connected to eliminate the variation of the collector voltage V c and Emitsu evening voltage V E of the transistor T R with respect to changes in ambient temperature, the output dynamic range V cc- V 0 UT , Vc-VOUT can be sufficiently secured, and can be used effectively without limiting the capacity of the oscillation circuit.
  • the current setting resistor of the constant current source for the reference current has a negative temperature characteristic.
  • the effect in Claims 1 to 7 is further enhanced by the fact that the resonator is a quartz resonator.
  • the rising of the oscillation of the built-in crystal oscillator is fast, so that the invalid power consumption is hardly consumed.

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  • Oscillators With Electromechanical Resonators (AREA)

Abstract

Un circuit d'oscillant possédant un vibreur piézoélectrique (X), tel qu'un cristal de roche, des condensateurs oscillants (C1, C2) et un transistor d'amplification à réaction (TR), comporte une source de courant constant (I) connectée en série à l'émetteur du transistor (TR). La résistance négative du circuit oscillant est sensiblement accrue et il est possible de réduire le temps de montée de l'oscillation requis pour que la sortie d'oscillation se trouve à l'état d'oscillation à un niveau de tension de sortie prédéterminé et à une fréquence d'oscillation prédéterminée après l'application de la tension de puissance.
PCT/JP1999/001322 1998-03-25 1999-03-17 Circuit oscillant WO1999049566A1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP10/95185 1998-03-25
JP9518598 1998-03-25
JP18049098 1998-06-26
JP10/180490 1998-06-26
JP10/249580 1998-09-03
JP24958098 1998-09-03
JP10/344117 1998-12-03
JP10344117A JP2000151279A (ja) 1998-03-25 1998-12-03 水晶発振回路

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WO1999049566A1 true WO1999049566A1 (fr) 1999-09-30

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PCT/JP1999/001322 WO1999049566A1 (fr) 1998-03-25 1999-03-17 Circuit oscillant

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JP (1) JP2000151279A (fr)
WO (1) WO1999049566A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148403A (en) * 1979-05-08 1980-11-19 Nippon Electric Co Method of fabricating thin film resistor
JPS6050514U (ja) * 1983-09-13 1985-04-09 日本電気株式会社 発振回路
JPS62295444A (ja) * 1986-06-16 1987-12-22 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH07191769A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 基準電流発生回路
JPH08186443A (ja) * 1994-12-28 1996-07-16 Nippon Dempa Kogyo Co Ltd 水晶発振器
JPH09223930A (ja) * 1996-02-14 1997-08-26 Toyo Commun Equip Co Ltd コルピッツ発振回路
JPH09321229A (ja) * 1995-08-24 1997-12-12 Seiko Instr Inc 半導体装置およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148403A (en) * 1979-05-08 1980-11-19 Nippon Electric Co Method of fabricating thin film resistor
JPS6050514U (ja) * 1983-09-13 1985-04-09 日本電気株式会社 発振回路
JPS62295444A (ja) * 1986-06-16 1987-12-22 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPH07191769A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 基準電流発生回路
JPH08186443A (ja) * 1994-12-28 1996-07-16 Nippon Dempa Kogyo Co Ltd 水晶発振器
JPH09321229A (ja) * 1995-08-24 1997-12-12 Seiko Instr Inc 半導体装置およびその製造方法
JPH09223930A (ja) * 1996-02-14 1997-08-26 Toyo Commun Equip Co Ltd コルピッツ発振回路

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