TW448609B - Oscillation circuit - Google Patents

Abstract

An oscillation circuit is provided to shorten the oscillation rise time required for the oscillation output to be brought into an oscillation state at a prescribed output voltage level and a prescribed oscillation frequency after the application of the power voltage. An oscillation circuit having a piezoelectric vibrator such as a quartz crystal, oscillation capacitors and a feedback amplification transistor comprises a constant-current source connected in series with the emitter of the transistor, thereby shortening the oscillation rise time.

Description

448609 A7 B7 V. Description of the invention (1) [Technical field to which the invention belongs] · This invention relates to the use of piezoelectric oscillation elements such as crystal oscillation elements to obtain stable low power consumption and oscillation with a certain amplitude of oscillation output from a low voltage power source. Circuit person. [Conventional technology] Oscillation circuits for piezoelectric oscillators, such as crystal oscillators, are used as a reference for frequency and time of various electronic devices. This electronic device, especially a portable device such as a mobile phone, is miniaturized and lightened. At the same time, in order to effectively use a power source such as a battery with limited power capacity, it is necessary to reduce its power consumption. Therefore, as shown in Figure 19, the portable communication devices, such as portable telephones, are in the standby state, and the power is turned on intermittently to communicate with the base station to confirm the reception. If it is received, it will be continuous. The power-on mode reduces the power consumption by intermittent power supply. Fig. 17 is a general circuit diagram of a temperature-compensated crystal oscillator circuit [TCXO] used in the crystal oscillator circuit. Among them, 7 ^ is an NPN transistor, Rc is a collector resistor, RE is an emitter resistor, R2 is a voltage dividing resistor, C, 'C2 is a capacitor, X is a crystal oscillation element, and Rt' Ct is an analog temperature compensation circuit. Characteristics of resistance and capacitance. Also, B series battery, 5 # is the switch,

Cc is a coupling capacitor to the load circuit. As shown in FIG. 17, when the switch Sw is turned on, the power supply voltage vcc is divided by the resistor R〆R2, and the potential of the divided point is supplied to the base of the transistor TR. As a result, when the transistor TR is operated, a DC current flows through the collector resistor Rc and the emitter resistor E to set a predetermined DC bias voltage. This paper size is applicable to the national standard (CNS) A4 specification (210 x 297 mm) ~ 1 310417 (Please read the precautions on the back before filling this page) Packing :: 1 order * ----- --- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 448 609 A7 B7 V. Description of the invention (2) (Please read the precautions on the back before filling out this page) — In terms of the potential of the above-mentioned voltage division point is applied to crystal The oscillating element X, the temperature compensation resistor RT, and the temperature compensation capacitor CT are also applied to the capacitors C t and C2, so that the crystal oscillation circuit starts to oscillate. The oscillating signal is output to the load circuit via the coupling capacitor Cc connected to the collector. The oscillating circuit constructed as above. After applying the power supply voltage Vcc, in order to make the oscillating output reach the oscillating state of the rated output voltage level and the rated oscillating frequency (± 1 ppm), it must have a relatively long oscillating rise time 1 ^. Figure 18 shows this state with a crystal oscillation circuit. The oscillation rise time Ts usually takes about 4 to 5 ms. The oscillating rise time Ts of this crystal oscillating circuit is longer than that of other piezoelectric oscillating element oscillating circuits such as ceramic oscillating elements. Therefore, a crystal oscillating circuit using a crystal oscillating element becomes a problem. Oscillation circuits such as crystal oscillator circuits that are used in the past are composed of so-called discrete circuits that are assembled into circuits by individual parts. There must be limits to miniaturization. Therefore, in the case of portable electronic equipment that requires miniaturization and weight reduction, when an oscillation circuit such as a crystal oscillation circuit is used, there is a problem in miniaturization. [Problems to be Solved by the Invention] The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the oscillation rise time Ts *, the oscillation output is not at the rated output voltage level, and the oscillation state of the rated oscillation frequency, so the vibration remote output cannot be used as Used as a reference frequency signal for transmitting and receiving frequencies. Therefore, after applying the power supply voltage Vcc, it is necessary to increase the oscillation output to the rated edge level and the rated oscillation frequency. Of course, power is also consumed during the oscillation rise time Ts, and this power consumption is ineffective power t. Therefore, in order to effectively use the capacity of the power source, it is necessary to shorten the time Ts. This paper size applies to the National Standard (CNS) A4 specification (2〗 〇 × 297 mm) '2 310417 448609 A7B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) and' Assembled with individual parts Oscillation circuits such as crystal oscillator circuits composed of so-called discrete components have reached the limit of miniaturization and weight reduction. In order to be suitable for the use of portable electronic equipment, other methods must be used to try to miniaturize the oscillation circuit itself. Therefore, the object of the present invention is to provide an oscillation circuit capable of shortening the oscillation rise time Ts required for the oscillation output to reach the oscillation state of the rated output voltage level and the rated oscillation frequency after the power supply voltage is applied. The rise time Ts, at the same time when the power supply voltage changes, also makes the oscillation frequency change extremely small, and can improve the oscillation circuit's dependence on the power supply voltage. The purpose is to shorten the oscillation rise time 1 ^, improve the oscillation frequency to the power supply At the same time of voltage dependence, it is an object to provide an oscillation circuit that improves the temperature dependence of the oscillation output level and the output amplitude without changing the oscillation output level and the oscillation edge output amplitude significantly when the ambient temperature changes. The purpose is to shorten the oscillation rise time Ts and to obtain a miniaturized and lightweight oscillator circuit. [Means for solving problems by the invention] The oscillating circuit described in item 1 of the scope of patent application is an oscillating circuit including a piezoelectric oscillating element, an oscillating capacitor, and a feedback amplifier transistor. The emitter of the transistor is connected in series with a constant current source. In this configuration, from the time when the power supply voltage Vcc1 is applied until the oscillating output becomes the rated output voltage level and the oscillating state of the rated oscillating frequency [± 1 ppm], the required oscillating rise time Ts' is more conventionally used to oscillate with an emitter resistor The oscillation rise time of the circuit is extremely short. 1 I ---- I ^ i I --------- ^ (Please read the precautions on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (2). χ297 mm) 3 310417 448609 at Β7 V. Description of the invention (4) (Please read the precautions on the back before filling this page) The oscillating circuit described in item 2 of the scope of patent application is made by: piezoelectric oscillating element; A transistor whose base is connected to a piezoelectric oscillating element: a resistor connected between a power source and applying a bias potential to the base of the transistor; a first capacitor provided between the base and the emitter of the transistor: A constant current source between the transistor emitter and one end of the power source; a second capacitor arranged in parallel with the constant power source; and an output resistor provided between the transistor collector and the other end of the power source. As described above, it is the same as that described in the first patent application range. From the application of the power supply voltage Vcc until the oscillation output becomes the rated output voltage level and the vibration state of the rated vibration salt frequency [± 1 ppm], The rise time Ts of the vibration edge is shorter than the rise time T s of the conventional resistor-resistor oscillation circuit. The oscillation level and the oscillation frequency in the steady oscillation state are stable without increasing power consumption. The oscillating circuit described in item 3 of the scope of patent application by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is composed of: a piezoelectric oscillating element; a first transistor having a base connected to the piezoelectric oscillating element; and the first transistor A second transistor in series; a resistor connected between the power source to apply a bias potential to the base of the first transistor and the base of the second transistor; provided at the base and the emitter of the first transistor First capacitor between: the constant current source provided between the emitter of the first transistor and one end of the power source: a second capacitor connected in parallel with the constant current source and the second capacitor provided between the collector of the second transistor and the other end of the power source Output resistance. With this structure, it is possible to obtain the same effect as described in item 2 of the scope of patent application. At the same time, the collectors of the first transistor and the second transistor are laminated. The meaning of this paper applies the Chinese National Standard (CNS) A4 specification (210x297 mm) 4 310417 448609 Α7 Β7 5. Description of the invention (5) (please first (Please read the notes on the back and fill in this page) [cascode], which forms the connection point between the collector and collector / resistor of the second transistor, and takes out the oscillation output. Therefore, the buffer amplifier function of the second transistor can mitigate the effect of the load fluctuation when the load connected to the output terminal is changed by the second transistor as a buffer amplifier function. Therefore, when the load changes, It can also make the oscillation of the oscillation circuit under the condition that the oscillation frequency of the output voltage level is more stable. The oscillating circuit described in item 4 of the scope of the patent application is composed of: a piezoelectric oscillating element ^ a transistor having a base connected to the piezoelectric oscillating element: connected between a power source and supplying a bias potential to the base resistance of the transistor A first capacitor provided between the base and the emitter of the transistor: a constant current source provided between the emitter of the transistor and a power terminal, and a second capacitor connected in parallel with the constant current source, and Outputting the above structure from the connection point of the emitter of the transistor and the constant current source can obtain the same effect as described in item 2 of the scope of patent application. And because the emitter side of the transistor is used as the take-out point of the output signal of the crystal oscillation circuit, there is no need to set a collector resistor between the transistor's collector and the power supply, so that the crystal oscillation circuit can be miniaturized and lightweight β The oscillating circuit described in item 5 of the scope of patent application is printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, which is composed of: a piezoelectric oscillating element: a first transistor with a base connected to the piezoelectric oscillating element; A second transistor in series; a constant current source for bias voltage provided between the base of the second transistor and the ~ power source terminal, or a constant voltage for bias voltage provided between the base of the second transistor and the other terminal of the power source A source; a bias resistor provided between the first transistor base and the second transistor base, and between the first transistor base and the other end of the power source, provided between the first transistor base and the other Emitter's paper size applies Chinese national standard (CNSM4 specification (210 X 297 Gongchu) 5 310417 448609 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs V. First capacitor between the description of invention (6); set above The first transistor emitter and A constant current source between the two power sources; a second capacitor connected in parallel with the constant current source; and an output resistance structure provided between the second transistor collector and one end of the power source. In this way, this structure can be obtained and the third item of the patent application. The same effect as described. At the same time, a constant current source for the bias between the base of the second transistor and one power terminal, or a constant current for the bias provided between the base of the second transistor and the other power terminal And a bias resistor is provided between the first transistor base and the second transistor base and / or between the first transistor base and the other power supply terminal, so that the first transistor and the second transistor can be biased. The base bias of the crystal is kept in position. Therefore, even if the power supply voltage changes, the base bias of the first transistor and the second transistor can be kept at a fixed level. This can significantly reduce the change in the oscillation frequency of the oscillation circuit. Therefore, the dependence of the oscillation frequency change of the oscillation circuit on the power supply voltage can be improved. The oscillation circuit described in the sixth and seventh items of the scope of patent application is based on: the piezoelectric oscillation element; the first connection of the base to the piezoelectric oscillation element Transistor; and the first transistor A second transistor connected in series; a constant current source for bias voltage provided between the base of the second transistor and a power source terminal; respectively provided between the base of the first transistor and the base of the second transistor, and The bias resistor between the first transistor base and the other end of the power source; the first capacitor provided between the first transistor base and the emitter; the first capacitor provided between the emitter of the first transistor and the other power source A constant current source; a second capacitor provided in parallel with the constant current source; an oscillation circuit formed by the output resistance between the second transistor collector and a power supply terminal; 2 The temperature compensation circuit of the transistor base and the temperature compensation circuit of the oscillation circuit, in the above 1 (please read the intention on the back before filling in this page) I --------------------- -The paper size of the paper applies to the Chinese National Standard (CNS) A4 specification (210 X 297 male) 6 310417 4 b 〇U 5ί A7 ________B7 V. Description of the invention (7) (Please read the precautions on the back before filling in this Page) A diode in series with a bias resistor between the base of the transistor and the other end of the power supply; 2 transistor between the base and the other end of the power supply, the emitter connected to the other end of the power transistors are respectively connected to the transistor between the base and the emitter. And the resistor connected between the base and the collector; and the resistor connected to the transistor collector as described above, when the ambient temperature of the oscillating circuit changes, it can be provided with two poles connected in series to the bias resistor A temperature compensation circuit composed of a body, a transistor, and a resistor connected to the transistor. The transistor tr2 collector voltage vc and emitter voltage VE do not change to the surrounding temperature, so as to ensure a constant output amplitude. Therefore, it is not necessary to limit the ability of the oscillation circuit and can be effectively used. In the same way, the temperature compensation circuit can change the "variation" of the bias constant current source and the variation of the bias voltage dividing resistors I and R2, so that the transistor TR collector voltage vc and the emitter voltage vE can be changed. Reduce and ensure a certain output amplitude Vc · VE, 0 · VE. Therefore, the constant current source IB and resistance 'R2 constituting the oscillation circuit can be allowed to make the selection of the components constituting the oscillation circuit easier. The oscillating circuits described in items 8, 9, 10, and 11 in the scope of patent application are printed. In the oscillating circuits described in items 1 to 7 in the scope of application, the current of the constant current source is set to a resistor with a A resistor configuration; a constant current source using a constant current source with a current setting resistance having a negative temperature characteristic; a constant current source using a constant current source; and a current mirror circuit that receives the reference current using the constant current source reference current; and a thin film resistor The above-mentioned current sets the resistance. This paper size applies to the national standard (CNS) A4 specification (210 X 297 mm) 7 310 417 448 6 09 A7 B7 Wisdom of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau of Industry and Industry 5. Description of the invention (8) If the structure described above is achieved, the effects described in the scope of patent applications 1 to 7 can be achieved. Moreover, when the temperature around the oscillation circuit changes, the reference current can be used The current setting resistance of the current source is used as a negative temperature characteristic resistance, which can significantly reduce the change in the current and temperature of the constant current source, so as to stabilize the output voltage level at high temperature. Stable rise. When the constant current source temperature and temperature change are significantly reduced, a special additional circuit such as a feedback circuit can be eliminated, and only a resistor with a negative temperature coefficient can be used as a current setting resistor, so that the circuit configuration can be simplified. In addition, the output voltage level of the oscillating circuit can be stabilized without changing the ambient temperature. The circuit current does not need to be margined, so the current of the current source can be small. The oscillating circuit belongs to the oscillating circuits described in items 1 to 7 of the scope of patent application. At least the transistor and the constant current source are integrated. The same semiconductor substrate. As described above, when the effects described in the patent application scope items 1 to 7 can be achieved, and it can replace the individual component assembly, discrete component (discrete) configuration 'Integrate circuit components The same semiconductor substrate constitutes 1C, so it is suitable for portable electronic equipment to make the oscillating circuit smaller and lighter. The oscillating circuit described in item 13 of the patent application scope is the oscillating circuit described in item 1 to 7 of the patent application scope. Only the piezoelectric vibrating element uses 7C pieces of crystal vibration ** As stated above, since the vibrating element is a crystal vibrating element, it can be compared with I ------------ * ^ --- IIII Ί ------- • Lacquer {Please read the precautions on the back before filling in this page> This paper size is applicable to China 囷 ® Home Standard (CNS) A4 specification (21ϋ X 297 public love) 8 310417 448 6 09 A7B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. 5. Description of Invention (9) The higher effect is found in the first to seventh records of the scope of patent application. . The portable communication device described in item 14 of the scope of patent application contains the crystal oscillator circuit described in item 1 to 7 of the scope of patent application. If the portable communication device is in a portable communication device that performs intermittent operations, the oscillation of the built-in oscillation circuit rises very quickly, so the consumption of reactive power can be reduced. [Embodiment of the invention] The first embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. 1 is a diagram showing a crystal oscillation circuit of the present invention. The constant current source I is connected between the emitter and the ground of the transistor TR. The difference from the conventional example in Figure 17 is that the constant current source I replaces the emitter resistor RE. The other components are the same as those in Figure 17. Therefore, if the power supply voltage Vcc is divided by the potentials of the resistors Ri and R2, the base of the crystal TR is supplied. Therefore, the transistor TR operates, and a set constant current flows through the collector resistor 1 and the transistor TR to set a constant DC bias voltage. The potential at the above-mentioned voltage dividing point is applied to the crystal vibration element X, the temperature compensation resistor RT, and the temperature compensation capacitor CT. Also applied to capacitors Ct, C2. Start the oscillation operation of the crystal oscillation circuit. 'The oscillation signal presented by the voltage drop of the collector resistor Rc will be input to the load circuit via the coupling capacitor Cc connected to the collector resistor. For example, according to the crystal oscillation circuit, from the application of the power supply voltage vcc until the oscillation output reaches the rated output voltage level, and the oscillation rise time required for the oscillation state at the rated oscillation frequency [± 1 ppm] is 1 ^, it is more The oscillation rise time Ts of the crystal oscillation circuit is short. {Please read the precautions on the back before filling in this page) Clothing ------------ Order ---------- Line_ This paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm> 9 310417 448 609 A7 B7 V. Description of the invention (10) Moreover, the oscillation level and oscillation frequency in the steady oscillation state are stable, and the power consumption is not increased. It is explained that the oscillation rise time Ts is longer than that of conventional use. The reason why the oscillation rise time Ts of the crystal oscillation circuit of the pole resistance RE is short is as shown in the following β. Figures 2 and 3 show the AC equivalent circuit diagram of the crystal oscillation circuit. For the sake of simplicity, RT and Capacitor CT is omitted. From the crystal oscillator circuit, the crystal oscillator element terminal can be regarded as the circuit side. The voltage between the base and the emitter of the transistor can be expressed as the mutual conductance (^ gm) of the transistor TR, as shown in Figure 2. No, it can be represented by an equivalent circuit with a constant current source. In the figure, RS, CK are the input impedance of the transistor * ^. R. is the resistance R, and the parallel resistance e RE with the resistance I is the constant current source I. "Resistance" is oscillated by a crystal in the equivalent circuit of Figure 2. The crystal of the circuit vibrates the element end, and the circuit-side impedance Z is regarded as the parallel circuit of the capacitor's resistance, which is sequentially converted into a series circuit, and the relationship between them is obtained as follows: Z = l / R Poverty (wc'p + l / RE (wc2) 2 + l / R〇 (iWC3) 2-RN. J / wc3 = Rp-

Rn- where R0 = R2 / (Rd R2), C \ = C, + C3 = C, i · c? / C,! + c2 Therefore, the equivalent circuit of the crystal oscillator circuit can be expressed as shown in Figure 3. ° The formula of the impedance Z is viewed from the crystal oscillator element end of the crystal oscillator circuit. 2 In the circuit side, the part of the circuit resistance with real numbers is lost. Resistance Rp 'This paper size is applicable to China National Standard (CNS) A4 specification (210x297 mm) 1〇310417 (Please read the precautions on the back before filling this page) I -------- Order ---- ------ Line economy but printed by Intellectual Property Bureau employee consumer cooperatives 448 6 09 A7 B7 V. Description of the invention (11) Resistance Rn, and reactance of imaginary term j / & & c3. In addition, Lx and Rx in Fig. 3 respectively represent the impedance and resistance of the crystal oscillating element X * (谙 Please read the precautions on the back before filling this page) The polarity of the loss resistance RP and the negative resistance RN are different. Therefore, the negative resistance RN cancels each other, which will substantially reduce the size of the negative resistance. In the present invention, the constant current source I is used to replace the emitter resistance RE of the crystal oscillation circuit. Therefore, the constant current source I flows and is fixed. At the same time, if the current needs to be changed, it will have a great resistance. The AC resistance of the fixed current source 'I is extremely large. Although it is theoretically infinite, it is actually limited by the circuit element structure. In addition, the transistor emitter is on a certain DC current and overlaps the oscillating frequency of the AC current. Because the AC resistance of the constant current source I is extremely large, the AC current on the fixed frequency of the oscillating frequency is superimposed on the constant current source. The capacitor C2 in parallel flows through the I, and the DC current flows through the constant current source I. As mentioned above, because the AC resistance of the constant current source I is extremely large, in the aforementioned equivalent circuit (Figure 3), the crystal oscillator The crystal oscillating element end is regarded as the circuit-side impedance Z and the loss resistance Rp of the emitter resistance RE becomes smaller. As a result, the offset amount of the negative resistance RN and the loss resistance RP becomes smaller. Therefore, the negative resistance 値 becomes substantially larger, causing the difference between the effective resistance (RX + RP) and the absolute resistance RN in the oscillation circuit to become larger, so as to accelerate the oscillation of the crystal oscillation circuit. In the present invention of the crystal oscillator circuit, the emitter of which is provided with a constant current source I, the oscillation rise time Ts is shorter than that of the conventional oscillation rise time Ts using the emitter resistor RE. Secondly, referring to FIG. 4 of the second embodiment of the present invention, Figure 5 (a), Figure 5 (b), Figure 6 (a), and Figure 6 (b) are explained as follows: 310417 This paper size is applicable to National Standard (CNS) A4 (210 X 297 mm) (%) 448 609 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (12) Figure 4 shows the crystal oscillation circuit diagram of the present invention. It is based on the first crystal of the first embodiment of the transistor 1 \ The collector will be the second transistor TRB (cascode). By The connection point of the second transistor D1 and the collector resistor Rc, and the oscillation output is taken out * At the same time, the bias resistor RB and the voltage stabilization CB are connected to the base of the second transistor TRB as shown in the figure " Others, such as including a constant current source connected to the TR emitter and ground of the transistor, are the same as in Figure 1, and the same parts as those in Figure 1 are marked with the same symbols. Figure 4 In the second embodiment shown, the emitter sets the current source I in the crystal oscillation circuit. Therefore, the oscillation rise time Ts is also the same as the crystal oscillation circuit in Fig. 1. A crystal oscillation circuit using an emitter resistor is more commonly used. The oscillation rise time Ts is short. Also, in the second embodiment shown in FIG. 4, the second transistor TRB is connected to the transistor 1 \ collector, and the collector of the second transistor TRB2 and Take the connection point of the collector resistor Rc and take out the oscillation output. Therefore, when the second transistor TRB operates as a buffer amplifier and the load connected to the output terminal can be changed by this machine, it is a second transistor TRB that can mitigate the effect of the load change by using the buffer amplifier. Therefore, even when the load fluctuates, the oscillation of the crystal oscillator can be stabilized. Figures 5 (a) and 5 (b) are used to prove the rise of the oscillation of the crystal oscillation circuit of the second embodiment shown in Fig. 4. The crystal oscillation circuit of each element constituting the oscillation circuit is set with a specific number and Characteristic diagram of rising oscillation. Fig. 6 U) and Fig. 6 (b) are for comparison, and the constant current source I is replaced with the conventional crystal oscillator circuit with the emitter resistor RE, and the other parts are exactly the same as those in Fig. 5 (a). . As for the oscillation rising characteristics of Figure 5 (a) and Figure 5 (b), it is — — — — — — — — — — — — — — — — — — — — — — -" 5 ^ {Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 12 310417 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System 448609 A7 B7 5. Description of the invention (13) Measured according to actual measurement. From Figure 5 (b) and Figure 6 (b), it can be seen that from the time when the power supply is applied to the output oscillation frequency, which reaches within 1 ppm of the rated soil, the oscillation rise time Ts is the same as that in Fig. 6 (b). As in the conventional use case, the crystal oscillation circuit using the emitter resistor is 4.4 ms, and the crystal oscillation circuit using the current source I of the present invention in Fig. 5 (b) is 1.4 ms. In this example, it is shown that the ratio of the two is 3 to 1. It can be seen that the crystal oscillation circuit of the present invention using the constant current source I has a great improvement effect on the rise time of the rise time 1 ^. Next, a third embodiment of the present invention will be described with reference to FIG. Fig. 7 shows a crystal oscillation circuit diagram of the present invention. This is different from the first diagram in the first embodiment in that the oscillation output signal is taken out from the emitter side of the transistor 7 \ via the coupling capacitor Cc, and the collector resistance is removed. In addition, if the constant current source I is connected between the emitter of the transistor TR and the ground, it is the same as the first figure. The same symbols are attached to the same parts as in Figure 1. In the third embodiment shown in Fig. 7, since a constant current source I is provided at the emitter of the crystal oscillation circuit, its oscillation rise time 1 is shorter than the oscillation rise time Ts of a conventional crystal oscillator circuit using an emitter resistor. This point is the same as the crystal oscillation circuit in Figures 1 and 4. Also, in the third embodiment shown in FIG. 7, the output signal of the crystal oscillation circuit is set at the emitter side of the transistor TR, so it is not necessary to set a collector between the transistor TR collector and the power source vcc. Extreme resistance. Therefore, the crystal oscillator circuit can be miniaturized and lightened. Next, the fourth and fifth embodiments of the present invention will be described with reference to FIG. 8, FIG. 9, and FIG. 10: ----- Order, -I ----- (Please read the note on the back first Please fill in this page again for this matter) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 cm) 13 310417 448 6 09 A7 B7 V. Description of the invention (Η) (Please read the precautions on the back before filling in this (Page) Fig. 8 shows a crystal oscillation circuit diagram of the present invention. The bias resistor RB in Fig. 4 of the second embodiment is replaced by a constant current source I for the bias. Other points such as the point where the constant current source I is connected between the transistor ^ emitter and the ground are the same as in the first figure. The same parts as in Fig. 4 are given the same symbols. As shown in Fig. 8, the fourth embodiment is based on the setting of a constant current source I at the emitter of the crystal oscillation circuit, so its oscillation rise time Ts is shorter than the oscillation rise time Ts of a conventional crystal 'oscillation circuit using an emitter resistor. And when the load at the output terminal is changed, its load fluctuation effect is mitigated by the function of the second transistor TRB as a buffer amplifier. It is the same as the crystal oscillation circuit in Figure 4. As shown in FIG. 8, the fourth embodiment is connected between the base and the power source of the second transistor, and a constant current source IB for bias is connected so that a constant current flows through the bias resistors I, R2. Therefore, the base bias of the transistor TRB can be maintained at a fixed value. With this function, when the power supply voltage Vcc fluctuates, the base bias voltage of each transistor of the crystal oscillation circuit in FIG. 4 can be changed to change the oscillation frequency of the crystal oscillation circuit. However, in this embodiment, even if the power supply voltage Vcc is changed, the base bias voltage of the transistor TR and the transistor TRB can be kept constant, so the oscillation frequency variation of the crystal oscillation circuit can be significantly reduced. In other words, the dependence of the power supply voltage on the oscillation frequency of the crystal oscillation circuit can be improved. * When the power supply voltage Vcc changes, the oscillation frequency of the crystal oscillation circuit can be changed. The mechanism that forms this change is related to each parameter (par a me ter), so it is not clear. It can only be determined that the paper size of the crystal oscillator is applicable to the Chinese national standard (CNS) A4 specification (210 X 297 mm) 14 310417 448609 A7 B7 V. Description of the invention (is) (Please read the precautions on the back before filling this page) The input impedance of the transistor in the circuit changes due to the setting of the bias voltage, and the capacitance of the terminals parasitic to the transistor changes due to the setting of the bias voltage. This change affects the crystal oscillation circuit and changes the oscillation frequency. The reason for its change β The constant current source 18 for the bias voltage and the current source I provided between the transistor 7 \ emitter and the ground I can share many constituent circuits because of, for example, a bandgap type constant current circuit Component 'is a component whose constant current source IB is added. Also, in the fourth embodiment, the base of the transistor core and the transistor TRB is biased to a fixed voltage. As shown in the fifth embodiment of Fig. 9, a constant voltage source VBW such as a battery may be provided instead of the constant current source IB. Setting the constant voltage source ^ has the same effect as setting the bias constant current source IB. Fig. 10 is a power supply voltage-frequency characteristic diagram showing the improvement of the power supply voltage dependency of the oscillation frequency of the crystal oscillation circuit in the fourth embodiment shown in Fig. 8. In the figure, the solid line represents the characteristics in the constant current bias of this embodiment, and the dashed line represents the characteristics in the resistance division bias of Figure 4 in the second embodiment for comparison. These characteristics are drawn according to actual measurement. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. From the above characteristic graph, it can be seen that in the crystal oscillation circuit of this embodiment, the oscillation frequency change of the power supply voltage variation is improved. In addition, in this embodiment, it can be seen that the oscillation frequency of the power supply voltage is less changed, and it is known that when a user uses a crystal oscillation circuit, even if the power supply voltage slightly deviates from a predetermined threshold, the problem of oscillation frequency offset can be improved. The above examples of maintaining the transistor 1 \ and the transistor TRB base bias to a fixed value are shown in the fourth embodiment using a constant current source IB and the fifth embodiment using a constant voltage source VB. The constant current source IB and constant voltage source VB are maintained at this paper. The national paper standard (CNS) A4 (210 X 297 mm) is applicable. 15 310 417 448 609 Α7 Β7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Note that the base bias voltage of the transistor tr & / or the transistor trb is fixed. It is also applicable to the first embodiment in Fig. 1, the second embodiment in Fig. 4, and the third embodiment in Fig. 7. At this time, the base bias voltage of the transistor 11 and / or the transistor TRB can also be maintained at a constant value by the constant current source IB and the constant voltage source Vb. Next, the sixth embodiment of the present invention will be described below with reference to FIG. 11 and FIG. 12: FIG. 11 is a crystal oscillation circuit diagram of the present invention. The crystal oscillation circuit of the fourth embodiment of FIG. 8 is added in series. In the bias resistor] ^ 2 of the diode Dt & transistor TRC. And temperature compensation circuits formed between the collector and the base of the transistor, between the base and the emitter, and the resistors R3, R4, and R5 connected to the collector. Other points, such as including the constant current source I connected between the transistor TR emitter and ground, and the constant current source IB in the bias circuit are the same as those in FIG. 8. The same parts as those in Fig. 8 are assigned the same symbols. As mentioned above, although the fourth embodiment shown in FIG. 8 has the advantages that the oscillation rise time Ts of the crystal oscillation circuit is shorter than that of the conventional crystal oscillation circuit and the power supply voltage dependency of the oscillation frequency of the crystal oscillation circuit is significantly improved, etc. However, there is no problem in improving the temperature change. In other words, when the bias voltage-dividing resistors R !, R2 have a temperature coefficient, the base bias of the transistor TR and the transistor TRB will change in response to changes in the ambient temperature. At this time, as shown in FIG. 12 U), the voltage Vc of the transistor TR collector varies. When the base bias voltage of the transistor tr fluctuates, the voltage VE of the emitter of the transistor TR moves as shown in FIG. 12 (b). The change in the transistor TR collector voltage Vc and the emitter voltage νε caused by the change in the base bias of the transistor TRB as described above makes the output of the crystal oscillation circuit ------------- take- ----- 1 Order one ------- Line- (Please read the notes on the back before filling in this page> This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 16 310417 448 6 0 9

Printed by the Intellectual Property Co., Ltd. of the Ministry of Economic Affairs and Consumer Cooperatives. 5. The description of the invention (Π) Changes in the output level νουτ also affect its output amplitude. In order to make the oscillation work normally in the crystal oscillation circuit, it is necessary to ensure the upper limit voltage and the lower limit voltage 乂 ^ νΕ ′ 0-VE with the emitter voltage VE as the center. However, only when the ambient temperature changes, the change of the collector voltage VC of the transistor 1 \ emitter voltage vc affects the upper limit voltage and lower limit power Mvc-VE, 0-VE. Therefore, it is necessary to estimate the change in advance, and set the emitter voltage VE and the collector voltage 乂 ^: to a larger value. This result 'causes a dynamic range V to be output. . -ν. ^, Vc-V. ^ Becomes smaller. Become a crystal oscillator circuit capability limitation. Moreover, the above-mentioned variation problem is not limited to the change of the ambient temperature, and can also be caused by the variation of the bias current source IB and the variation of the bias voltage dividing resistor 1 ^, * In the sixth embodiment of FIG. 11, In the crystal oscillation circuit of FIG. 8 of the fourth embodiment, a diode Di and a transistor TRC are provided in series with the bias resistor 112. Resistors R3 ', R4', and R5 are respectively connected between the collector and the base of the transistor, between the base and the emitter, and the collector to form a temperature compensation circuit. The collector voltage vc and the emitter voltage ν £ of the transistor TR are kept constant from changes in the ambient temperature, so that the output level Vui of the crystal oscillation circuit does not change without affecting its output amplitude. And, the upper limit voltage centered on the emitter voltage VE and the lower limit voltage VC-VE, 0 · νE can be stabilized at a fixed value. In order to ensure the output dynamic range v〃-veut, vc-, it is possible to not limit the ability of the crystal oscillation circuit | to be effectively used-the same way, the temperature compensation circuit can be used for the bias and constant bias of the constant current source Pressure 'resistance R!,! ^ Variation caused by variations, exclude — — — — ί — — — «— — — — III I &' — -ί — — — — — — (Please read the back first Please fill in this page before filling in this page) This paper size is applicable ® National Standard (CNS) A4 specification (210x 297 mm) 17 310417 449609 Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperatives printed A7 B7 V. Description of invention U) Transistor 7 ^ Variation of collector voltage Vc and emitter voltage VE | Ensure that the upper limit voltage and lower limit voltage Vc- VE, 0- VE centered on the emitter voltage VE, make the constant current source constituting the crystal oscillation circuit, and the resistance allows it to have variations Therefore, it is easier to select the components of the crystal oscillation circuit. In the following, the operation of the temperature compensation circuit set in the sixth embodiment is described in detail with reference to FIG. 11 as follows: Because the collector voltage Vc of the transistor TR is:

Vc = VA + VB + VBE2 -........ (1) a Vc / 5 τ = 3 VA Id T + 3 VB / 3 T-3 VBE2 / 5 T ......... . (2) In the formula: 3VC / 3 T represents the temperature change voltage of Vc2. (Hereinafter it is expressed as / T) VB = VBE3X (R4 / R5 + l) .......... (3) Also, because each resistance is only 4, the temperature coefficient of R4 is the same, dVs = d VBE3x (R4 / R5 + D ......---- (4) The base-emitter voltage VBE2 and VBEs of each transistor are the same (can be realized by thermal bonding), so substitute (4) into (2) , Obtained, 3 Vc = a vBE3X (R4 / R5) + VA .... (5) If the temperature of the collector voltage Vc must be changed to zero, 3Va =:-9VBE3X ( R4 ^ R5) Among them, if 3 VBE3 is the temperature coefficient of ordinary transistor -1.6X 1〇-3, 3 VA = 1.6X10 · 3 X (R4 / R5) 0 and because VA = R3X [2, such as I2 as Fixed, 3vA can be determined by the temperature coefficient K3 of the resistor Rj, that is, K3XVA = 1.6X10 -3x (R4 / R5) -I ----- 11 ---- installed! 11-" —Order--- ---- · {Please read the precautions on the back before filling this page) This paper size is applicable to China Solid State Standards (CNS) A4 (210 X 297 mm) 18 310417 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs ^ 48 6 0 9 A7 B7 V. Description of the invention (19) VA = 1.6X10 · 3 X {R4 / (K3R5) ---------- (5) If VA is set to (5), The voltage between the collectors Vc The temperature change is zero. However, if the current 12 is not time-dependent due to temperature, the current flowing into the base of the transistor is changed by the temperature coefficient of the resistor Ri '112. Therefore, the voltage νΑ is set in a cut and try manner. If the base current of the transistor is ignored, the emitter voltage of the transistor * ^ is: VE = -VBE1 + (Vj -Vf) XR2 / (RI + R2) + Vf 3 VE =-5 VBE1 + (3 V,-3 Vf) XR2 / (R: + R2) + Vf Because the temperature coefficient of the VBE # diode of the transistor is the same, and vc is based on the relationship of 3V1 = 3VBE2 which is set to be fixed. And dVE = 0. As described above, the temperature change of the emitter voltage VE can be made zero. Next, a description will be given of the transistor TR collector voltage 时 when the current 値 varies with the bias current source IB. , And the change of the emitter voltage VE is as follows: When the current 値 IB changes by 5 値 from the rated value, the voltage 乂! Changes 5 V 1 is 5 V! =: {R3 II (Ri + R2)} 5 IB where,丨 丨 indicates that the resistors are connected in parallel. The resistor R3 can be made small in the circuit configuration, so the variation of the current IB and the change in the voltage V are extremely small. Because the collector voltage vc of the transistor TR is vc = VBE2. ------------. Install ----- JJI order ---------- line (Please read the precautions on the back before filling this page) This paper size applies t National Standard (CNS) A4 (210 X 297 mm) 19 310417 448609 A7 B7 V. Description of the invention (2) Pressure VE is VE ^ Vi-Vf) XRz / iRdRj + vf. The current of the current source 1 ^ has a variation, which can also make the changes in the collector voltage Vc and the emitter voltage vE small. "Secondly," when the variation in the resistance resistance causes changes, the transistor 1 \ collector voltage vc and The change of the emitter voltage vE is as follows: If the voltage 乂 1 is: VI = (VA + VB) = 〇 + R 4 / R 5) XVB £ 3 + R 3 XI 2 The resistance to Rj varies, and the V of the ruler 3 changes. The amount 5 ¥ is: < 5 V! = 12 X 5 R 3 Due to the circuit configuration, the resistance 1 ^ 3 can be extremely small, and the variation of the voltage V caused by each resistance difference is very small. {Please read the precautions on the back before filling this page) The collector voltage V c can be determined by Ve =: V,-VBE2, and the two-emitter voltage VE: V £ · = (V 1-Vf) r2 > / (R1- R2) + Vf. Even if the resistances vary, the variation of the collector voltage VC and the emitter voltage VE can be extremely small. Here, from the sixth embodiment in Fig. 1: 1, the transistor TR set is examined. The changes in the polar voltage Vc and the emitter calendar 丨 VEi, and the results of the simulation (simuUtion) on the improvement of the ambient temperature are as follows. The temperature is selected from the standard temperature of 27 0 C, low temperature -30 ° C, high temperature 75 ° C »This implementation For example (Figure 11), the simulation results are as follows: Vc VE Standard temperature 1.290 v---0.528 v --- Low temperature 1.282 v -0.620% 0.530 v + 0.379% High temperature 1.268 v-1.705% 0.512 v * 0.030% This paper size applies to China National Standard (CNS) A4 210 X 297 mm) 20310417 Intellectual Property Office employee Economic Co-op plate 5 448 60 9 A7 B7 take five, description of the invention) Analog Comparative Example (FIG. 8) The results were as follows:

Vc VE standard temperature 1.290 v-0.528 v --- low temperature 1.080 v -16. 28% 0.339 v-3 5.80% high temperature 1.500 v + 16.28% 0.718 v + 36.00% From the above results. Because this embodiment is a resistor R3, R4 connected to the bias resistor 1 in series with the diode Di and the transistor TRC, between the transistor collector and the emitter, between the base and the emitter, and the collector, respectively. R5B becomes a temperature compensation circuit. Therefore, the change of the collector voltage Vc and the emitter voltage VE of the transistor TR to the surrounding temperature is smaller than that of a comparative example without a temperature compensation circuit. In the sixth embodiment of FIG. 11, a temperature compensation circuit is provided so that the collector voltage vc and the emitter voltage VE of the transistor τB do not change the ambient temperature. As an example, the description is applicable to the first embodiment. The fourth embodiment of FIG. 8. However, the bias resistor R2 is connected in series with the diode D, and the transistor TRC, and the resistors R3, R4, and R5 are connected between the transistor collector and the emitter, the base and the emitter, and the collector, respectively, to form temperature compensation. The circuit eliminates changes in the collector voltage Vc and the emitter voltage VE of the transistor TR for changes in the ambient temperature, and is not limited to the above embodiment. It can also be applied to the crystal oscillation where the current source 18 is set in the base bias circuit. Circuit to achieve the same effect. Next, the seventh embodiment of the present invention will be described with reference to FIGS. 13, 14 and 15: FIG. 13 is a circuit diagram of a crystal oscillation circuit of the present invention. The fourth embodiment is a transistor provided in FIG. 8. Constant current source I between TR emitter and ground, and constant current source IB for bias, specifically the first constant current source h, and the second constant current --- II--I--I [I 1 i I ---! | ^ * fllnl — (Please read the note on the back— ¥ item before filling out this page> This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 21 310417 448 6 〇9 Printed by the Ministry of Economic Affairs «. Property Bureau employee consumer cooperative A7 B7 V. Description of the invention (22) Outside the current source 12 is shown, and the current setting resistor has a negative temperature coefficient to improve the temperature characteristics of the transistor TR emitter current. The other points are the same as those in Fig. 8 | The same parts as in Fig. 8 are assigned the same symbols. 6 In this Fig. 13, the first constant current source I includes two constant current sources. A constant current source is connected between the PNP transistor Q6 and the resistor Vcc biasing resistor 1, and a constant voltage V is applied to the base of the transistor Q6. The transistor Q6 It is based on the application of a constant voltage γ1 at the base to function as a constant current source. It is the same as the constant current source IB for the bias voltage shown in Fig. 8. It supplies a constant current to the bias resistors Rt and R2, and the transistors TR The base bias voltage of TRB is set to a constant voltage. The first constant current source I, and the other constant current source is a current setting resistor R6 with a negative temperature characteristic, which is connected in series with a PNP transistor (^ 7, at the same time, in A constant voltage V is applied to the base of the transistor Q7. The transistor Q7 applies a constant voltage Vi to the base and functions as a constant current source at the same time as the current setting resistor R6, and the constant current reference current IR is output from the collector. The second constant current source 12 is connected to the collector and the base, the emitter is connected to the UPN transistor Q8 of Q, the base is connected to the base of the transistor Q8, and the transistor TR is connected to the emitter of the transistor. The UPN transistor Q9 between the ground terminals is formed by the transistors Q 8 and Q 9 to form a current mirror (c Urrentmirror) circuit. These transistors Q〆Qs use pair transistor Those with the same characteristics. Then, the reference current Iκ of the constant current of the first current source h is supplied to the current mirror In the first constant current source h and the second constant current source 12 configured as described above, the first constant current source L is based on the constant voltage -i II 11--II applied to the base of the transistor 07. --- install i — · —] — order · —--- I · line (please read the notes on the back before filling in this page) This paper size is applicable to China National Standard (CNS) A4 (210x297 mm) 22 310417 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 448609 A7 ___B7_____ V. Description of the invention (23) The resistance of V t and the current setting resistor R 6 6 and the transistor Q7 base and * emitter voltage The current is output as the reference current U. When the reference current U flows into the transistor Q8 of the second constant current source 12, the reference current IR is also shunted to the base, automatically forming a bias that causes the collector current to be slightly equal to the reference current iR, generating a base corresponding to the transistor Qs. The voltage between the emitter and the emitter is required for the collector to flow the reference current IR. This voltage is also applied to the base of transistor q9, so that transistor q9 with the same characteristics is biased under the same conditions. Therefore, a current that is the same as the reference current flows through the collector of transistor Q9 to display the fixed value. Current characteristics. The above-mentioned current setting resistor R6 of the first constant current source 1 uses a transistor module in order to form an integrated circuit in the aforementioned crystal oscillation circuit. Generally, a diffusion resistor using a base diffusion layer is used. The diffusion resistance of the base diffusion layer has a positive temperature characteristic, and becomes a main cause of a constant current source current change corresponding to a change in ambient temperature. The transistor that forms a constant current source with the current setting resistor R6, although there are various parameter relationships such as the base-emitter voltage, the DC current amplification factor, etc., but the temperature coefficient of the entire transistor is positive, which also corresponds to the surroundings. The change in temperature becomes the main cause of the change in the current of the constant current source. In the previous crystal oscillator circuit, a resistor R6 was set for this current using a diffusion resistor, which corresponds to changes in ambient temperature. Diffusion resistors and transistors that change the current of the constant current source 値 have a positive temperature coefficient. Therefore, when the ambient temperature rises, the current of the constant current source 减少 is gradually reduced. As a result, the output voltage level of the crystal oscillator circuit inevitably drops at high temperatures. Special (please read the precautions on the back before filling in this page) Packing--------- Ordering ---------- The paper size of the paper is applicable to the Chinese solid standard (CNS) A4 specification (210 X 297 mm) 23 310417 448 609 Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by a cooperative ^ A7 B7 V. Description of the invention (24) The change in output voltage level and temperature is shown in Figure 14. Fig. 14 is a graph showing the peak value of the current setting resistor r6 using a diffusion resistor. In the previous example crystal oscillator circuit, the output level changes according to temperature changes. In the figure, the power supply voltage Vcc is taken as an example of 5 · 5ν, 3.3v, 3.0v, and 2.7 \, which indicates actual measurement. As can be seen from the figure, the output level of the crystal oscillator circuit decreases significantly at high temperatures. The present invention is to solve the problem that the output voltage level of the crystal oscillation circuit using the previous example of the diffusion resistance significantly changes the ambient temperature. The current setting resistance R6 using a negative temperature coefficient resistor as the first constant current source 1: makes the output voltage level. It must not be stabilized by ambient temperature changes. The current setting resistor 1 having a negative temperature coefficient is formed by a thin film resistor by a sputtering method, a CVD method, or the like. There are many types of thin film resistors, and polysilicon resistors are preferred. If the polycrystalline silicon resistor with a negative temperature coefficient is used as the first constant current source I, the current setting resistor R6 and the current setting resistor R6 together constitute a transistor system that constitutes a constant current source as described above. The relationship between various parameters such as voltage and DC current amplification factor, the temperature coefficient of the entire transistor is positive, and the two cancel each other out due to the influence of the surrounding temperature change, so the current change of the constant current source can be suppressed. As a result, the output voltage level of the crystal oscillator circuit can be maintained stable over a wide temperature range. This state is shown in FIG. 15. Fig. 15 is a correlation diagram of the output level peak value 値 and temperature change of the current setting resistor scale 6 using the crystal oscillation circuit using polycrystalline silicon resistors of the present invention and the crystal oscillation circuit of the previous example using a diffusion resistor as the current. Power supply .. I ----- 衣 i—! 1 Order! -• Line (Please read the precautions on the back before filling this page) This paper size applies the national standard (CNS) A4 (210 X 297 mm) 24 310417 448609 A7 B7 V. Description of the invention (25) ( (Please read the precautions on the back before filling out this page) The voltage V cc 3.0 V is taken as an example to indicate actual measurement. As can be seen from the figure, the crystal oscillation circuit of the present invention using polycrystalline sand resistance as the current setting resistance Rs is more stable than the previous example over a wide range of output voltage levels. Based on the ambient temperature of 251, the change ratio of the output voltage level from the low temperature side (-40eC) to the high temperature side (+ 110 ° C). It is 20% before the example using the diffusion resistor, and 6% of the present invention using the polycrystalline silicon resistor. As in the seventh embodiment of the above-mentioned FIG. 13, when the temperature around the crystal oscillation circuit fluctuates, the current setting resistance 1 {6 of the first constant current source h is a resistance with a negative temperature coefficient, which can significantly reduce the constant current source. The change of the current 値 to the temperature * Compared with the previous example, the output voltage level can be stably co-oscillated over a wide range. Therefore, the oscillating output of the crystal oscillating circuit can be stably raised without being affected by the ambient temperature. In addition, when the constant current source current 小时 significantly reduces the temperature change, there is no need for a special additional circuit such as a feed back circuit, and only a resistor having a negative temperature coefficient can be used as the current setting resistor R6, thereby simplifying the circuit configuration. In addition, the output voltage level of the crystal oscillator circuit can be stabilized without being affected by the ambient temperature. It is not necessary to estimate the margin of the circuit current, so that the current source current can be made smaller. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed in the seventh embodiment of FIG. 13, uses the resistance of the negative temperature coefficient as the reference current, and the current setting resistance R6 of the first constant current source I, which is a significant reduction. The change in the temperature of the small constant current source 値 over temperature is described by taking a stable oscillation output voltage level in a wide range as an example to describe the crystal oscillation circuit applicable to Fig. 8 of the fourth embodiment. However, the crystal oscillation circuit of the crystal oscillation circuit is stable. It is not limited to the above-mentioned embodiment. * It is also applicable to the crystal oscillation circuit in the form of a constant current source between the transistor TR emitter and ground to obtain the same paper size. National Standard (CNS) A4 Specification (210 X 297 mm) 25 310417 448609 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7____ 5. Description of the Invention (26) Effect. 1 Next, an eighth embodiment of the present invention will be described with reference to FIG. 16: This figure shows that the circuit components in the crystal oscillation circuit of the present invention are integrated in the same crystal semiconductor circuit as a 1C crystal oscillation circuit. In the figure, circuit components such as transistors, resistors, and capacitors marked with 1C in a two-point lock wire frame are accumulated in the same semiconductor substrate. In order to correspond to each circuit element and the element in FIG. 4, the same symbols are marked. * Transistor, transistor Q5 and constant current source IB correspond to the constant current source I in Fig. 4. In the transistor 1 \ emitter circuit, a specific constant current circuit flowing a DC current is formed. Transistor q3 and transistor q5 are connected to form a current mirror. The current of transistor q3 is proportional to the current of transistor q5, and the current of transistor 1 is equal to the current of constant current source I. The current of the constant current source Ii has no dependence on the temperature and the power supply voltage. Therefore, the transistor 1 \ emitter circuit provides a stable DC current. The transistor Q4 is connected to the diode, and the resistor R2 is the voltage division resistor. a part. E is a ground line. In Figure 16, the capacitors q, (: 2 and Cc are not integrated with the crystal oscillator circuit X, because the capacitor q must be selected in accordance with the specifications or load conditions of the crystal oscillator circuit, < : 2 and Cc. Capacitors G, (: 2 and Cc can also be accumulated on the same substrate as the object of integration. This figure is based on the crystal oscillator circuit in the fourth embodiment of the second embodiment as the object 1 and the circuit is configured The components are accumulated on the same semiconductor substrate to form 1C. Other embodiments such as the first embodiment (FIG. 1), the third embodiment (FIG. 7), the fourth embodiment (FIG. 8), and the fifth embodiment may also be used. (Fig. 9), 6th embodiment (Fig. 11), 7th embodiment (Fig. 13), the circuit components are integrated in the same (please read the precautions on the back before filling this page) ----- II'1 Order ---------. This paper size is applicable to 0 Chinese standards (CNS) A4 specifications (210 > ^ 97 mm) 26 310417 448609 A7 B7 V. Description of the invention (27) The semiconductor substrate constitutes a 1C crystal oscillator circuit. (Please read the precautions on the back before filling out this page) In the embodiment in Figure 16, the The circuit components are integrated on the same semiconductor substrate 1C. Instead of the so-called discrete components that are assembled with individual parts to form a circuit. The crystal oscillator circuit is small and lightweight. It is suitable for portable electronic equipment. Increase the negative resistance. In addition to shortening the oscillation rise time Ts, 尙 can obtain various characteristic effects. That is, if the increase of the negative resistance can make the oscillation level and oscillation frequency stable during oscillation, it can be reduced by external The change caused by the reason "and when the power supply voltage changes, keeping the base of the transistor biased to a fixed voltage can change the frequency of the crystal oscillator circuit and significantly reduce it. That is, it can improve the oscillation frequency of the crystal oscillator circuit. Dependence of the power supply voltage. When the temperature around the crystal oscillation circuit fluctuates, a diode, a transistor in series with the bias resistor, and a temperature compensation circuit connected to the transistor can be provided to make the collector voltage of the transistor TR. ve, and the emitter voltage VE, to exclude changes in temperature changes. Ensure the output dynamic range vcc -VQUT,

Vc -V0UT makes the ability of crystal oscillator circuit to be used effectively without restriction. The same is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The temperature compensation circuit can reduce the variation caused by the bias current constant source 18 and the bias voltage divider resistors R, and R2 to reduce the power consumption. The crystal 1 \ collector voltage vc and the emitter voltage VE are reduced and reduced to ensure that the upper limit voltage is centered on the emitter voltage νε, and the lower limit voltage Vc -VE I Ο-νΕ * allows the constant current source constituting the crystal oscillation circuit. IB, the difference between resistors Ri and R2. Therefore, the selection of the components that make up the crystal oscillation circuit is easier. ”Also, when the temperature around the crystal oscillation circuit fluctuates, the paper standard of the negative temperature applies the Chinese National Standard (CNS) A4 specification (210x297 mm) 27 310417 448 6 0 9 A7 B7 V. Description of the invention (28) (Please read the notes on the back before filling this page) The resistance is based on the current setting resistor R6 of the constant current source for the reference current, so that the current of the constant current source is generated by temperature. Change, significantly reduced. Compared with the previous example, the oscillation of the output voltage level can be stabilized in a wide range. Therefore, when the crystal oscillation circuit is not affected by the ambient temperature, it can rise steadily and reduce the current of the constant current source due to temperature changes. That is, there is no need for special additional circuits such as a feedback circuit, and only a resistor with a negative temperature coefficient is used as the current setting resistance. Therefore, the structure of the circuit can be simplified. Also, because the output voltage level of the crystal oscillation circuit is not affected by the ambient temperature and is stable, it is not necessary to estimate the margin of the circuit current, and the current of the current source is set to be small. value. In the future, due to the miniaturization of the crystal oscillating element, the equivalent series resistance Rx will increase, and it can also be absorbed by a substantially larger negative resistance. Therefore, it corresponds to the miniaturization and lightness of the crystal oscillating circuit. In the same way, it is possible to use a substantially oscillating negative resistance, and a crystal oscillator with an equivalent series resistance with large variations can be used. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The above is a description of each embodiment of the present invention, using a temperature-compensated crystal oscillation circuit TCXO that compensates for frequency-temperature characteristics as an example. However, the present invention is not limited to this, and can also be applied to a package crystal oscillation circuit SPXO that directly utilizes the characteristics of the crystal oscillation element, and a voltage-controlled crystal oscillation circuit VCXO that controls the change of the external voltage or adjusts the output frequency. , And various crystal oscillator circuits such as OCXO, which are controlled in a constant temperature bath for use. In the present invention, the power supply may be intermittently turned on during the standby state of the crystal oscillation circuit, and after communicating with the base station, it is determined whether there is an incoming call, and if there is an incoming call, it is switched to a so-called intermittent action which is continuously energized. Used in the national standard (CNS) A4 specification (210 X 297 mm) as applicable in this paper standard 28 310417 448 6 0 9 A7 B7 V. Description of the invention (29) 19 Oscillation circuits of mobile phones and other devices as shown in Figure 19 . -(Please read the notes on the back before filling this page) As above, the crystal oscillator circuit of each embodiment of the present invention can be used in the oscillator circuit of the portable communication machine to reduce the power consumption of the portable communication machine. As in the above embodiments of the present invention, a crystal oscillation circuit using a crystal oscillation element as a vibration element will be described. The vibration element of this oscillating circuit is not limited to the crystal vibration element. Other piezoelectric elements such as ceramics can also be used. In this case, the same effects as those of the embodiments can be obtained. [Effects of the present invention] According to the structure described in item 1 of the scope of patent application of the present invention, the required oscillation rise time from the application of the power supply voltage to the oscillation state where the oscillation output becomes the rated output voltage level and the rated oscillation frequency 1 ^, It is shorter than the rise time Ts of the conventional oscillation circuit using an emitter resistor. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. This is the rise time Ts of the oscillation circuit of the conventional crystal oscillation circuit. The oscillation circuit of other piezoelectric elements is long (usually 4 to 5ms). Such a long oscillation rise time Ts may cause problems particularly when a crystal oscillation circuit is applied. According to the present invention, the oscillation rise time Ts required for the oscillation output to reach the oscillating state of the rated output voltage level and the rated oscillation frequency after the application of a power source electric mill can be shortened particularly. Therefore, the applicable range of the crystal oscillation circuit can be enlarged. Between this oscillation rise time Ts, the consumption of reactive power can also be reduced. According to the structure described in item 2 of the scope of patent application of the present invention, the same reason as in item 1 of the scope of patent application, starting from the application of the power supply voltage Vcc until the oscillation output becomes the rated output voltage level and the rated oscillation frequency (± i ppm) State of oscillation. The required oscillation rise time is 1 ^. Compared with the conventional paper size of the emitter resistor, the national standard (CNS) A4 specification (2) 0x297 mm is used. 29 310417 448609 A7 B7 V. Description of the invention (3) The oscillation rise time Ts of the oscillation circuit is short "* (Please read the precautions on the back before filling this page) Also, the oscillation level and oscillation frequency of the stationary oscillation state are stable without increasing power consumption. According to the constitution described in item 3 of the patent application scope of the present invention, the same effect as that in item 2 of the patent application scope can be obtained. Furthermore, the first transistor collector is overlapped with the second transistor, and the oscillation output is obtained from the connection point between the second transistor collector and the collector resistor. The buffer amplifier function of the second transistor can mitigate the effect of the load fluctuation when the load connected at the wheel output end is changed by a second transistor with a buffer amplifier function. Therefore, when the load changes, the oscillation of the oscillation circuit can be made more stable. For example, the structure described in item 4 of the scope of patent application of the present invention can obtain the same effect as the item 2 of the scope of patent application. At the same time, the output signal of the crystal oscillation circuit is at the emitter side of the transistor. It is necessary to set a collector resistor between the collector of the transistor and the power supply to make the oscillation circuit compact and lighter. If printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs according to the composition described in item 5 of the patent application scope of the present invention, the same effect as in item 3 of the patent application scope can be obtained. At the same time, when the power supply voltage Vcc changes, the The base bias voltage is kept at a certain value so that the change in the oscillation frequency of the oscillation circuit is significantly reduced, so that the power supply voltage dependency of the oscillation circuit can be improved. For example, according to the constitution described in the claims 6 and 7 of the scope of patent application of the present invention, when the temperature around the oscillating circuit changes, it is formed by providing a diode in series with the bias resistor, a transistor, and a resistor connected to the transistor, respectively. Temperature compensation circuit. The collector voltage Vc and emitter voltage VE of the transistor TR can not be applied to the Chinese paper standard (CNS) A4 (210 X 297 mm) for this paper size. A7 B7 V. Description of the invention (3i) The ambient temperature changes can fully ensure the output dynamic range vcc t νουτ, vc-VQUT, without being limited by the ability of the oscillation circuit to be effectively used. Similarly, the temperature compensation circuit is used to bias the bias voltage. The change caused by the uneven bias of the constant current source bias voltage divider resistor can make the transistor 1 \ collector voltage Vc and the emitter voltage VE not change to ensure the upper and lower voltage centered on the emitter voltage 乂 £ Vc -νΕ, 0 · νΕ. Therefore, it is easy to select the components constituting the oscillation circuit. For example, according to the structure described in items 8, 9, 10, and 11 of the scope of patent application for the present invention, when the temperature around the oscillation circuit fluctuates, the resistance of the negative temperature characteristic is used as the reference current and the current setting resistance of the constant current source is used to make the The change in the current of the current source significantly reduces the change in temperature, so the output voltage level is stable at high temperatures, and the oscillation output can rise steadily without being affected by the surrounding temperature. In addition, when the constant current source current is reduced due to temperature changes, no special additional circuit such as a feedback circuit is required, and only a resistor with a negative temperature coefficient is used as the current setting resistor, so that the circuit configuration can be simplified. In addition, the output voltage level of the oscillating circuit is stable without being affected by the surrounding temperature. It is not necessary to estimate the margin of the circuit current, and the current of the current source can be made smaller. According to the constitution described in item 12 of the patent application scope of the present invention, the effects described in item 1 to 7 of the patent application scope can of course be obtained. In addition, the circuit components are integrated on the same semiconductor substrate to form 1C, which replaces the discrete components of the circuits that are assembled by individual components. It can be applied to portable electronic equipment, making the oscillator circuit compact and light-weight compact. ： ------------ ^ * ------- Order --------. (Please read the notes on the back before filling this page) This paper is suitable for China Standard (CNS) A4 specification (2〗 0 X 297 mm) 31 310417 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 448609 A7 B7 V. Description of the invention (32) As described in item 13 of the scope of patent application according to the present invention The structure uses a crystal vibration element as the vibration element, which can make the effects described in the scope of claims 1 to 7 of the patent application higher. According to the structure described in item 14 of the scope of patent application of the present invention, a portable communication device that can be operated infrequently can raise the oscillation of the built-in crystal oscillator earlier, so it can reduce the invalid power consumption. [Brief description of the drawings] Fig. 1 'is a diagram showing a crystal oscillation circuit according to a first embodiment of the present invention. Fig. 2 is an AC equivalent circuit diagram showing the crystal oscillation circuit of Fig. 1; Figure 3 is the equivalent circuit diagram of Figure 2. Fig. 4 is a diagram of a crystal oscillation circuit according to a second embodiment of the present invention * Fig. 5 (a) (b) is a diagram showing the crystal oscillation circuit of the present invention and its oscillation rising characteristics by setting the specific number of each element "Fig. 6 (A) (b) is a graph showing the specific crystal oscillator circuit for setting the number of each element and its oscillation rise characteristics. Fig. 7 is a diagram showing a crystal oscillation circuit according to a third embodiment of the present invention. Fig. 8 is a diagram showing a crystal oscillation circuit according to a fourth embodiment of the present invention. Fig. 9 is a diagram showing a crystal oscillation circuit according to a fifth embodiment of the present invention. ^ ------------ ^ ------- Order ---------- Line (Please read the notes on the back before filling this page) This paper size applies China National Standard (CNS) A4 Specification (210 X 297 mm) 32 310 417 448 6 09 Employee Co-operation, Intellectual Property Bureau, Ministry of Economic Affairs, Du Printed A7 B7 V. Description of Invention (33) Figure 10 shows the fifth aspect of the invention. Power supply voltage frequency characteristic diagram of the crystal oscillation circuit of the embodiment. Fig. II is a diagram showing a crystal oscillation circuit related to a sixth embodiment of the present invention. Fig. 12 is a diagram showing a voltage relation diagram of a crystal oscillation circuit according to a sixth embodiment of the present invention. Circuit diagram. Fig. 14 is a graph showing the relationship between the output levels to temperature changes in the crystal oscillator circuit of the previous example of the seventh embodiment of the present invention. Fig. 15 is a diagram showing the relationship between the output levels of the crystal oscillation circuit for temperature changes in the seventh embodiment of the present invention. Fig. 16 is a circuit diagram showing an integrated crystal oscillator according to an eighth embodiment of the present invention. Fig. 17 is a circuit diagram showing a conventional crystal oscillator. Fig. 18 is a graph showing an oscillation rising characteristic of a conventional crystal oscillation circuit. Figure 19 is a structural diagram of a mobile phone with a crystal oscillator circuit as a constituent element. [Symbol Description] X crystal oscillator element tr transistor T rb transistor I 疋 current source -------- II III ^ i — u— ^ «11 ---- i. (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specification do X 297 public love) 33 310417

Claims (1)

H3 Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs No. 88HM189 Patent Application Amendment to the Patent Scope (March 1, 1990) 1. An oscillating circuit comprising: a piezoelectric vibration element, an oscillating capacitor and feedback amplification A transistor is characterized in that the oscillation circuit is provided with a constant current source in series with an emitter of the transistor described above. 2. An oscillation circuit consisting of: a piezoelectric vibrating element: the piezoelectric vibrating element is connected to a transistor of its base; it is connected between a power source to supply a bias voltage to the resistor located at the base of the transistor; A first capacitor between the base and the emitter of the transistor; a constant current source provided between the emitter of the transistor and a power terminal on one side; a second capacitor provided in parallel with the constant current source; and The output resistance between the collector of the transistor and the power supply terminal on the other side. 3. An oscillation circuit consisting of: a piezoelectric vibration element: a first transistor connected to the base of the piezoelectric vibration element; a second transistor connected in series with the first transistor; connected between a power source and The bias potential is supplied to the resistance of the base of the first transistor and the base of the second transistor; the first capacitor provided between the base and the emitter of the first transistor; the first capacitor provided between the base and the emitter of the first transistor; A constant current source between the emitter of the crystal and the power supply terminal on one side; a second capacitor connected in parallel with the constant current source; and an output resistance provided between the collector of the second transistor and the power supply terminal on the other side . 4. An oscillating circuit comprising: a piezoelectric vibrating element; the piezoelectric vibrating element is connected to a transistor of its base; connected between a power source and a resistor that supplies a bias potential to the base of the transistor; The base of the above transistor and this paper are in accordance with the Chinese National Standard (CNS) A4 specification (YlO X 297). 1 310417 4 48609 H3 The first capacitor between the emitters printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs : A constant current source provided between the emitter of the transistor and a power supply terminal on one side; and a second capacitor provided in parallel with the constant current source; and the connection point between the emitter of the transistor and the constant current source Output by β 5. An oscillation circuit consisting of: a piezoelectric vibration element: a first transistor connected to the base of the piezoelectric vibration element; a second transistor connected in series with the first transistor; provided in the above A constant current source for bias voltage between the base of the second transistor and one power supply terminal or a constant current source for bias voltage provided between the base of the second transistor and the other power supply terminal; Base of 1 transistor and the above-mentioned second transistor The bias resistor between the base of the first transistor and the base of the first transistor and the other power supply terminal; the first capacitor provided between the base and the emitter of the first transistor: provided in the first transistor A constant current source between the emitter of the crystal and the other power supply terminal; a second capacitor provided in parallel with the constant current source; and an output resistance provided between the collector of the second transistor and the power supply terminal on one side ° 6. An oscillation circuit consisting of: a piezoelectric vibration element; a first transistor connected to the base of the piezoelectric vibration element; a second transistor connected in series with the first transistor; Constant current source for bias voltage between the base of the transistor and the power supply terminal on one side: respectively provided between the base of the first transistor and the base of the second transistor and between the base of the first transistor and the base of the first transistor The bias resistor between the power supply terminal on the other side; the first capacitor provided between the base and the emitter of the first transistor; and the capacitor provided between the emitter and the other power terminal of the first transistor. A current source; a second capacitor connected in parallel with the constant current source; and a collector and a power source provided on the second transistor The size of the original paper is in accordance with China National Standard (CNS) A4 (210X297) 2 310417 448609 Η3 The output resistance of the printing room of the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs is characterized by: And the base of the second transistor are provided with a temperature compensation circuit. 7. If the oscillation circuit of the scope of the patent application No. 6, wherein the temperature compensation circuit is: a diode body connected in series between a bias resistor provided between the base of the first transistor and the power supply terminal on the other side ; Set between the base of the second transistor and the power supply terminal on the other side, and the emitter is connected to the transistor on the other power supply terminal: respectively connected between the base and the emitter of the transistor and the base The resistance between the collector and the resistor connected to the collector of the transistor. 8. For the oscillating circuit with the scope of patent application No. 1, 2, 3, 4, 5, 6, or 7, the current setting resistance of the constant current source of the circuit is constituted by a resistor with negative temperature characteristics. 9. The oscillating circuit according to item 8 of the scope of patent application, wherein the constant current source is: a constant current source for a reference current with a current setting resistor; and a current mirror circuit receiving the reference current of the constant current source for the reference current. Constructor. 10. The oscillation circuit according to item 8 of the scope of patent application, wherein the current setting resistor is formed by a thin film resistor. 11. The oscillating circuit according to item 9 of the patent application scope, wherein the current setting resistor is a thin film resistor. 12. If the oscillating circuit in the scope of patent application No. 丨, 2, 3, 4, 5, 6, or 7 'wherein' is at least the transistor and the constant current source are integrated on the same semiconductor substrate "1 3, if the scope of patent application The vibrating scales of the vibrating plates of items 1, 2, 3, 4, 5, 6, or 7 are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public treasure) 3 310417 448609 H3, where the piezoelectric The vibration element is a crystal vibration element. 14. According to the scope of the patent application, the oscillating circuit of any one of 2, 3 * 4, 5, 6, or 7 wherein the oscillating circuit is installed on a portable communication device. Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs. Applicable to China National Standard (CNS) A4 (210X297 praise) 4 310417