WO1999010935A1 - Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material - Google Patents

Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material Download PDF

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Publication number
WO1999010935A1
WO1999010935A1 PCT/JP1997/002993 JP9702993W WO9910935A1 WO 1999010935 A1 WO1999010935 A1 WO 1999010935A1 JP 9702993 W JP9702993 W JP 9702993W WO 9910935 A1 WO9910935 A1 WO 9910935A1
Authority
WO
WIPO (PCT)
Prior art keywords
spheric
semiconductor device
kinds
film
thin film
Prior art date
Application number
PCT/JP1997/002993
Other languages
English (en)
French (fr)
Inventor
Josuke Nakata
Original Assignee
Josuke Nakata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Josuke Nakata filed Critical Josuke Nakata
Priority to CA002269632A priority Critical patent/CA2269632C/en
Priority to KR10-1999-7003597A priority patent/KR100386833B1/ko
Priority to US09/297,207 priority patent/US6294822B1/en
Priority to EP97937817A priority patent/EP0940860B1/en
Priority to AU40313/97A priority patent/AU736457B2/en
Priority to PCT/JP1997/002993 priority patent/WO1999010935A1/ja
Priority to JP51076699A priority patent/JP3326462B2/ja
Priority to DE69725601T priority patent/DE69725601T2/de
Publication of WO1999010935A1 publication Critical patent/WO1999010935A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1017—Shape being a sphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
PCT/JP1997/002993 1997-08-27 1997-08-27 Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material WO1999010935A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CA002269632A CA2269632C (en) 1997-08-27 1997-08-27 Spherical semiconductor device and method of manufacturing same
KR10-1999-7003597A KR100386833B1 (ko) 1997-08-27 1997-08-27 구상반도체 디바이스와 그 제조방법 그리고 구상반도체 디바이스
US09/297,207 US6294822B1 (en) 1997-08-27 1997-08-27 Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
EP97937817A EP0940860B1 (en) 1997-08-27 1997-08-27 Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
AU40313/97A AU736457B2 (en) 1997-08-27 1997-08-27 Spherical semiconductor device and the manufacture method for the same and spherical semiconductor device material
PCT/JP1997/002993 WO1999010935A1 (en) 1997-08-27 1997-08-27 Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
JP51076699A JP3326462B2 (ja) 1997-08-27 1997-08-27 球状半導体デバイスとその製造方法
DE69725601T DE69725601T2 (de) 1997-08-27 1997-08-27 Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/002993 WO1999010935A1 (en) 1997-08-27 1997-08-27 Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material

Publications (1)

Publication Number Publication Date
WO1999010935A1 true WO1999010935A1 (en) 1999-03-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/002993 WO1999010935A1 (en) 1997-08-27 1997-08-27 Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material

Country Status (8)

Country Link
US (1) US6294822B1 (ja)
EP (1) EP0940860B1 (ja)
JP (1) JP3326462B2 (ja)
KR (1) KR100386833B1 (ja)
AU (1) AU736457B2 (ja)
CA (1) CA2269632C (ja)
DE (1) DE69725601T2 (ja)
WO (1) WO1999010935A1 (ja)

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JP2002060943A (ja) * 2000-08-22 2002-02-28 Tohoku Electric Power Co Inc 高純度シリコンの被覆方法及び装置
WO2002035612A1 (en) * 2000-10-20 2002-05-02 Josuke Nakata Light-emitting or light-receiving semiconductor device and method for fabricating the same
WO2002035613A1 (en) * 2000-10-20 2002-05-02 Josuke Nakata Light-emitting or light-detecting semiconductor module and method of manufacture thereof
JP2002261301A (ja) * 2001-02-28 2002-09-13 Kyocera Corp 光電変換装置
WO2003056633A1 (fr) * 2001-12-25 2003-07-10 Josuke Nakata Appareil semi-conducteur d'emission et de reception de lumiere
JP2007507867A (ja) * 2003-10-02 2007-03-29 ショイテン グラースグループ 太陽電池に利用される球状、又は、粒状の半導体素子、その生産方法、その半導体素子を含む太陽電池の生産方法、及び、太陽電池
JP2007514301A (ja) * 2003-11-03 2007-05-31 サステイナブル・テクノロジーズ・インターナショナル・プロプライエタリー・リミテッド 被覆部表面上の多層光起電デバイス
US7238968B2 (en) 2001-08-13 2007-07-03 Josuke Nakata Semiconductor device and method of making the same
WO2007123289A1 (en) * 2006-04-21 2007-11-01 Wavenics Inc. High efficiency led with multi-layer reflector structure and method for fabricating the same
JP2007534151A (ja) * 2003-10-02 2007-11-22 ショイテン グラースグループ 集積した半導体素子を有する太陽電池の直列接続部、その作成方法、及び、直列接続部を有するモジュール
WO2007141836A1 (ja) * 2006-06-02 2007-12-13 Hitachi, Ltd. Ｉｃタグ用インレットの製造方法
US7402747B2 (en) * 2003-02-18 2008-07-22 Kyocera Corporation Photoelectric conversion device and method of manufacturing the device
US7602035B2 (en) 2001-10-19 2009-10-13 Josuke Nakata Light emitting or light receiving semiconductor module and method for manufacturing same
US7682544B2 (en) 2004-06-29 2010-03-23 Fuji Machine Mfg. Co., Ltd. Method of fabricating photovoltaic panel
US7947894B2 (en) 2006-02-06 2011-05-24 Kyosemi Corporation Light receiving or light emitting semiconductor module

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JP3992126B2 (ja) * 1999-12-16 2007-10-17 株式会社三井ハイテック 太陽電池の製造方法
JP4239352B2 (ja) * 2000-03-28 2009-03-18 株式会社日立製作所 電子装置の製造方法
US6512301B1 (en) * 2001-07-12 2003-01-28 Intel Corporation Making interconnections to a non-flat surface
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NL1020059C2 (nl) * 2002-02-21 2003-08-25 Corus Technology B V Werkwijze en inrichting voor het bekleden van een substraat.
JP3902210B2 (ja) * 2002-05-02 2007-04-04 仗祐 中田 受光又は発光用パネルおよびその製造方法
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US6897085B2 (en) * 2003-01-21 2005-05-24 Spheral Solar Power, Inc. Method of fabricating an optical concentrator for a photovoltaic solar cell
US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
JP2004335823A (ja) * 2003-05-09 2004-11-25 Canon Inc 光起電力素子及び光起電力素子の形成方法
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JP4437657B2 (ja) * 2003-10-03 2010-03-24 富士機械製造株式会社 光発電パネルの製造方法
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US20110033962A1 (en) * 2006-04-21 2011-02-10 Wavenics Inc. High efficiency led with multi-layer reflector structure and method for fabricating the same
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US7704352B2 (en) * 2006-12-01 2010-04-27 Applied Materials, Inc. High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate
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KR20130013989A (ko) * 2011-07-29 2013-02-06 지에스칼텍스 주식회사 구형 반도체 소자를 이용한 광전 변환 장치 및 이의 제조 방법
US9593053B1 (en) 2011-11-14 2017-03-14 Hypersolar, Inc. Photoelectrosynthetically active heterostructures
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DE102012008440A1 (de) 2012-05-01 2014-07-10 Martin Bogar Solarmodul und Verfahren zu dessen Herstellung
EP2867932B1 (de) 2012-07-02 2019-09-25 Heliatek GmbH Transparente elektrode für optoelektronische bauelemente
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US7947894B2 (en) 2006-02-06 2011-05-24 Kyosemi Corporation Light receiving or light emitting semiconductor module
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WO2007141836A1 (ja) * 2006-06-02 2007-12-13 Hitachi, Ltd. Ｉｃタグ用インレットの製造方法
JP4796628B2 (ja) * 2006-06-02 2011-10-19 株式会社日立製作所 Ｉｃタグ用インレットの製造方法

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EP0940860A1 (en) 1999-09-08
KR20000068831A (ko) 2000-11-25
DE69725601T2 (de) 2004-04-15
US6294822B1 (en) 2001-09-25
CA2269632A1 (en) 1999-03-04
AU736457B2 (en) 2001-07-26
KR100386833B1 (ko) 2003-06-09
JP3326462B2 (ja) 2002-09-24
EP0940860B1 (en) 2003-10-15
DE69725601D1 (de) 2003-11-20
CA2269632C (en) 2003-09-02
AU4031397A (en) 1999-03-16
EP0940860A4 (en) 2000-05-17

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