WO1997028559A1 - Dispositif permettant d'obtenir un corps d'une energie elevee, procede de formation d'un film cristallin, et procede de fabrication d'un composant electronique possedant un film fin - Google Patents

Dispositif permettant d'obtenir un corps d'une energie elevee, procede de formation d'un film cristallin, et procede de fabrication d'un composant electronique possedant un film fin Download PDF

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Publication number
WO1997028559A1
WO1997028559A1 PCT/JP1997/000213 JP9700213W WO9728559A1 WO 1997028559 A1 WO1997028559 A1 WO 1997028559A1 JP 9700213 W JP9700213 W JP 9700213W WO 9728559 A1 WO9728559 A1 WO 9728559A1
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Prior art keywords
thin film
energy
supply chamber
forming
energy body
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PCT/JP1997/000213
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English (en)
Japanese (ja)
Inventor
Hiroyuki Abe
Mitsutoshi Miyasaka
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Seiko Epson Corporation
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Publication of WO1997028559A1 publication Critical patent/WO1997028559A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Definitions

  • High-energy supply device method for forming crystalline film, and method for manufacturing thin-film electronic equipment
  • the present invention relates to a high-energy substance supply device represented by a laser irradiation device, a method for forming a crystalline film using the same, and a method for manufacturing a thin-film electronic device using the crystalline film obtained in this manner.
  • the active matrix method allows for an LCD having more than several hundred thousand pixels, and each pixel has a switching element such as a thin film transistor (TFT).
  • TFT thin film transistor
  • Transparent insulating substrates such as fused silica plates and glass, that make transmissive displays possible, are used as substrates for various LCDs.
  • Semiconductor films such as amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) are usually used as the active layer of these TFTs.
  • polycrystalline silicon which has a high operating speed, is indispensable when integrating not only the pixel switching elements but also the driving circuit by TFT.
  • a polycrystalline silicon film is used as the active layer, a fused quartz plate is used as a substrate, and the TFT is usually manufactured by a manufacturing method called a high-temperature process in which the maximum process temperature exceeds 1000 ° C.
  • the mobility of the polycrystalline silicon film is about 10 cm 2 ⁇ V- 1 ⁇ s 1 to 100 cm 2 ⁇ ⁇ - ' ⁇ s-'.
  • a normal glass substrate is used because the maximum process temperature is as low as about 400 ° C.
  • the mobility of the amorphous silicon film ranges from about 0.1 cm 2 ⁇ V— 1 ⁇ s 1 to 1 cm 2 ⁇ V— 1 ⁇ s 1 .
  • amorphous silicon films have significantly poorer electrical characteristics than polycrystalline silicon films, and their operation speed is slow. I have a problem.
  • polycrystalline silicon TFTs manufactured by a high-temperature process use a fused silica plate, and thus have the problem that it is difficult to increase the size and cost of LCDs. Under these circumstances, there is a strong demand for a technique for producing a thin film semiconductor device using a crystalline semiconductor film such as a polycrystalline silicon film as an active layer on a normal glass substrate.
  • the low-temperature process poly-Si TFT To use a large normal glass substrate rich in mass production at constraints and a vector maximum processing temperature to avoid deformation of the substrate be less than about 400 D C occurs. These are now called the low-temperature process poly-Si TFT and are under development. After all, the most important technical issue of the low-temperature process P o 1 y-S i TF III is how to form an excellent crystalline film at a processing temperature of about 400 ° C or less. In other words, there is a need for an excellent apparatus for forming an excellent crystalline film. Resolving such issues not only can produce good TFTs and LCDs using them, but also boosts the performance of all electronic devices that use crystalline films, such as solar cells and semiconductor element circuits. It is a technology that can improve the price and at the same time lower the price.
  • the first conventional technology of forming a crystalline film at low temperature and using it to produce thin-film electronic equipment is SID (Society for Information Dislay), 93 digest, p. 387 (1993). ).
  • a polycrystalline silicon film is formed as a crystalline film
  • a TFT is formed as a thin-film electronic device.
  • Crystalline film is first monosilane (S i H 4) as a raw material gas at a low pressure chemical vapor deposition (LP CVD method), deposited a one S i layer of 50 nm at a deposition temperature 5 5 0 ° C
  • the a-Si film is formed by irradiating a laser.
  • the laser irradiation apparatus comprises a laser light source 102 and a laser irradiation chamber, and a substrate having an irradiation object 103 such as an a-Si film on a surface thereof is provided on a stage 105 provided in the laser irradiation chamber. Installed on top.
  • a laser incident window made of quartz glass or the like is provided in a part of the laser irradiation chamber at a position facing the stage, and 10 mm of laser light is incident through the laser incident window 106.
  • the distance between the laser entrance window and the substrate 104 is usually about 1 cm.
  • Laser irradiation to the irradiation target is performed by setting the stage temperature from room temperature to about 400 ° C and in the air or under vacuum.
  • a device here, TFT.
  • an oxide film functioning as a gate insulating film is deposited by PECVD or the like.
  • the gate is formed using tantalum (Ta) on the gate insulating film.
  • donor or impurity is implanted into the polycrystalline silicon film using the gate electrode as a mask to form the source and drain of the transistor in a self-aligned manner.
  • This impurity implantation uses a non-mass separation type implantation apparatus called an ion-doving method, and uses hydrogen-diluted phosphine (PH 3 ) / diborane (B 2 H 6 ) as a source gas.
  • the activation of the implanted ions is at 300 ° C.
  • an interlayer insulating film is deposited, and electrodes and wirings are made of aluminum oxide (ITO) or aluminum (A1) to complete the TFT.
  • a second conventional technique for obtaining a crystalline semiconductor film at a low temperature is disclosed in Japanese Patent Application Laid-Open No. Hei 7-93931.
  • a crystalline film is obtained by laser irradiation.
  • laser irradiation is performed in a vacuum or in an inert gas atmosphere.
  • the following is stated in the [0 0 0 9] column of the PR. "At least the surface layer of the semiconductor thin film formed on the substrate is melt-recrystallized under reduced pressure or in an inert gas atmosphere, and the substrate (1) on which the melt-recrystallized semiconductor thin film is formed is depressurized or inert.
  • a TFT is created basically by the same manufacturing method as the first prior art.
  • a silicon film is irradiated with a laser in a vacuum or in the air or under an inert gas atmosphere using the laser irradiation apparatus shown in FIG. 2 to obtain a crystalline film.
  • Irradiation in the air introduces impurities such as oxygen, nitrogen, and dust into the crystalline film.
  • impurities such as oxygen, nitrogen, and dust
  • the crystalline film is a semiconductor or a metal
  • mixing of oxygen and dust leads to a remarkable decrease in physical properties of the thin film.
  • Irradiation in a vacuum requires a laser-irradiation chamber with high airtightness, and a turbo It is necessary to add a large-scale evacuation device such as a molecular pump to the laser irradiation device. This leads to an increase in the price of thin-film electronic devices using a crystalline film and a drop in productivity.
  • an inversion layer is formed on the semiconductor surface, and the electron-hole transport process inside is controlled.
  • the current flows on the surface of the metal thin film.
  • a device that utilizes the optical and chemical properties of a thin film (eg, a mirror or a metal catalyst). If this important surface behaves very differently from the interior due to reconstruction with unpaired pairs, its surface properties will also change significantly (usually worsen).
  • the mobility in the inversion layer degrades from several tens of% to several% of the mobility in the semiconductor depending on the surface state.
  • the present invention aims to solve the above-mentioned problems, and the object thereof is to form a high-energy material supply device represented by a laser irradiator and to form an excellent crystalline film at a relatively low temperature using the device.
  • An object of the present invention is to provide a method, and a method for manufacturing a thin-film electronic device using the crystalline film thus obtained.
  • a thin film of a semiconductor such as silicon or a metal such as tantalum is deposited on various substrates in a first step, and at least a surface layer of the thin film is partially melted in a subsequent second step, and then cooled.
  • Various crystalline films are formed by crystallization through a solidification process (hereinafter referred to as melt crystallization in the present application). Substrates to which the present invention is applicable are described in detail in section (2-1), and thin films are discussed in section (2-2).
  • a crystalline film means that the film is in a single crystalline state, a polycrystalline state, or a mixed crystalline state in which crystalline and amorphous are mixed.
  • Melt crystallization is achieved by supplying a high-energy substance such as laser light to the thin film.
  • the forms of high-energy materials include electromagnetic waves such as light, X-rays, and gamma rays, as well as charged particle flows such as protons, electron beams, and alpha rays, as well as neutrons and neutrons.
  • Spontaneous particle beam and the like are possible.
  • Particle beams have the advantage that high energy can be easily supplied to thin films through strong and weak interactions.
  • the flow of neutrons contains electromagnetic waves (photons), unnecessary electric charges are not applied to the thin film even when the electric conductivity of the thin film is low, and thus the thin film is electrically connected during the supply of high-energy material. No damage.
  • the charged particle flow can be easily generated by atomization into plasma, etc., and has the advantage that the direction control of the charged particle flow is limited and simple.
  • the most suitable high-energy substance is electromagnetic waves with a wavelength of about 10 nm to about 10 mm, that is, so-called light, considering the ease of handling such as generation and direction control, or safety for living organisms. Light can be classified into laser light and non-laser light, both of which can be used as high-energy substances.
  • C The melt crystallization that proceeds in the second step is a hydrogen molecule (mixed gas of H and inert gas, or hydrogen fluoride).
  • HF hydrochloric acid
  • HC 1 hydrochloric acid
  • HN0 nitric acid
  • H 2 S0 sulfuric acid
  • the inert gas is a nitrogen gas (N 2 ), a rare gas such as helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), or any of these inert gases.
  • Chemical mixture for the gas mixture of All or a gas inert, gas mixture of these gases with the aforementioned various inert gases can be adapted.
  • the atmosphere in which the melt crystallization proceeds contains hydrogen is important in the following points.
  • a high-energy substance is supplied to a thin film and then solidified as a crystal after being melted, adjacent atoms form an orderly bond inside the thin film to form a regular crystal structure.
  • the structure of the reconstructed surface is generally very different from the internal structure of the crystal, and its band structure is also changed. However, a large stress exists on the reconstructed surface.
  • This stress acts as a lattice distortion up to several periods of the underlying crystal. Changes in band structure change the concentration of electrons and holes, and lattice distortions reduce the mobility of electrons and holes.
  • unpaired bond pairs always leak from the bonds between surface atoms. They are chemically active, reacting with water and oxygen in the air or adsorbing dust when the thin film is taken out to the atmosphere after the crystallization of the film has been completed.
  • the existence of unpaired pairs themselves creates interface orders, and furthermore, becomes the center of scattering of electrons and holes, which lowers these mobilities. Such a reconstructed surface has various adverse effects on the properties of the thin film.
  • the melt crystallization of the thin film proceeds in an atmosphere containing hydrogen.
  • unpaired pairs of atoms appearing on the surface during the cooling and solidification process are terminated by various hydrogen atoms contained in the atmosphere (hereinafter abbreviated as hydrogen termination).
  • hydrogen termination various hydrogen atoms contained in the atmosphere
  • reconstruction of the surface is avoided, and at the same time the total number of unpaired pairs is significantly reduced.
  • the crystalline film obtained according to the present invention has a high purity and the surface structure is very close to the crystal internal structure. From these facts, the metal surface reflects the inherent physical properties of the metal in a simple manner, and the semiconductor surface directly expresses the semiconductor properties.
  • the mobility is slightly reduced due to the reconstructed surface, so that the effective mobility of the TFT formed by the prior art is small. It is much larger than the effective mobility of the substrate, and its value is stable between the substrate and the slot.
  • melt crystallization is performed in a mixed gas atmosphere of hydrogen molecules and an inert gas, no impurities are introduced into the crystallized film such as metal or semiconductor, and a hydrogen-terminated high-purity crystallized film is obtained.
  • melt crystallization of a semiconductor film typified by silicon is carried out in a mixed gas atmosphere of a halide of hydrogen and an inert gas, the reaction between the halide and the semiconductor film is relatively easy to occur, and the crystal is crystallized. Hydrogen termination of the nitrided semiconductor film is ensured. Similarly, hydrogen termination can be performed relatively easily even with a mixed gas of an acid and an inert gas. This is particularly effective for metal thin films.
  • Thin film constituent elements as hydrides The idea is to proceed with melt crystallization in a mixed gas atmosphere of a contained gas and an inert gas. This is because hydrogen termination is ensured and high purity is guaranteed.
  • the best hydride, especially when the thin film is silicon, is silane. Because silane reacts quickly, it reacts reliably with unpaired pairs on the surface. As a result of the reaction, even if the silane is trapped in the silicon thin film, the silicon atomic layer is further increased, and the purity is not reduced and the lattice is not distorted.
  • the hydrogen partial pressure in the atmosphere and the partial pressure of the hydride are about 1 OmTorr or more. This is based on the following reasons. Assuming that the mass of each gas molecule is m (kg), the partial pressure is P (Pa), the temperature is ⁇ ( ⁇ ), the concentration is C (in “ 3 ), and the average velocity is v (m ⁇ S" 1 ) , The flow velocity density F (m— 2 / 3kTm (1) [Equation 1]
  • the calculated minimum partial pressure for each hydride is as follows.
  • the minimum required partial pressure of a hydride increases with its molecular weight.
  • the lower explosive limit of hydrogen is about 4%, and the corresponding hydrogen partial pressure is about 30 Torr. Therefore, from a safety point of view, the maximum value of the hydrogen partial pressure can be said to be about 30 T 0 rr.
  • the lower explosive limit of silane is about 1%, and the corresponding silane partial pressure is ⁇ 0.6 T 0 rr.
  • Other hydrides are preferably used at a concentration of about 1% or less or a partial pressure of about 7.6 T 0 rr or less from the viewpoint of safety.
  • the maximum partial pressure can be said to be about 5 Torr.
  • the hydride partial pressure at the time of melt crystallization is set to 10 mTorr or more and 5 Torr or less for all hydrides (including hydrogen molecules), the present invention can be safely achieved.
  • the partial pressure of the hydride in the second step has been discussed so far, the total pressure is preferably at atmospheric pressure or higher.
  • the above effects can be obtained even if the melt crystallization is performed under a low pressure (in a vacuum) that satisfies the above partial pressure conditions.
  • a vacuum system is used, the cost of the system is increased and the process is complicated. At atmospheric pressure, the equipment and processing steps are simplified, and productivity is significantly improved.
  • the evaporation and scattering of the constituent elements of the thin film during melt crystallization and the adhesion of the evaporated and scattered elements in the equipment are performed as compared with processing under vacuum. Can be significantly reduced. This is referred to as a scattering control effect). This is because the gas that forms the atmosphere suppresses the molten surface and suppresses evaporation and scattering in proportion to the pressure. Since the magnitude of this effect is determined by the level of the total pressure, in principle, if the pressure is set to atmospheric pressure using only the hydrogen molecules and hydrides described above without using an inert gas, the The same scattering suppression effect as when a mixed gas of hydride and inert gas is used is obtained.
  • Nitrogen as an inert gas is the most commonly used and has the advantage of low cost. Metals and semiconductors are supplied with high energy and react with nitrogen when in the liquid state at high temperatures. Noble gases, on the other hand, have the advantage that they never react, no matter what thin film material gets hot. The material constituting the thin film has a relatively large atomic weight such as silicon or aluminum. Therefore, the scattering control effect is greater for heavy elements such as argon, krypton, and xenon among rare gases. Cribton and xenon are abundant and expensive. The inert gas that is inexpensive, practical, and has a great effect of suppressing scattering is argon.
  • the target substance such as a semiconductor thin film or a metal thin film formed on the substrate is supplied with a high energy integral to stably proceed the second step of melting and crystallizing at least the surface layer.
  • a suitable high-energy supply device is required.
  • light one laser beam
  • the shape of the high-energy body supply device will be described with reference to FIG.
  • a method of forming a crystalline film by applying the second step to the thin film formed on the substrate in the first step as a target substance to which a high energy substance is supplied will be discussed.
  • the high-energy body supply device (FIG. 2) of the present invention uses the source (laser-source) 202 that generates the high-energy body 207 such as laser light and the generated high-energy body as the target substance ( And a supply chamber 201 for supplying to the substrate on which the thin film is formed).
  • the supply chamber has a function (installation table) 205 for installing the target substance 203 in the room. For example, a substrate on which a thin film has been formed is installed on an installation table in a supply chamber.
  • the mounting table should be capable of supplying a high-energy substance 207 to the desired position of the target substance. Motion function.
  • An introduction window 206 for introducing a high-energy substance into the supply chamber is provided on a part of the wall surface 209 of the supply chamber, and the introduction window is a substance that has a low absorption of the high-energy substance and hardly allows gas molecules to pass therethrough. Consists of In other words, the introduction window is transparent to the high-tech energy and is not transparent to gas molecules. As an example, when the high energy is integrated with light, the introduction window is made of transparent glass such as quartz.
  • the introduction window is provided at a position where the constituent material of the target substance (in the example of the silicon thin film, silicon atoms) hardly adheres when a high-energy substance is supplied to the target substance (for example, a silicon thin film).
  • a high-energy substance for example, a silicon thin film.
  • the high-energy substance supply device shown in FIG. 2 a part of the wall surface of the supply chamber protrudes in a direction away from the target substance, and an introduction window is provided at the tip of the protrusion 210.
  • the distance L1 between the introduction window and the target substance is larger than the closest distance L2 between the wall surface 209 and the target substance.
  • the distance between the introduction window and the thin film is larger than the closest distance between the wall surface and the thin film, that is, the introduction window is mostly composed of the thin film even if a high energy substance is supplied to the thin film.
  • the high-energy body 207 is supplied in a state where it is provided at a position where it does not adhere.
  • the scattering range of the element evaporated or scattered from the target substance is drawn as a scattered constituent substance.
  • the introduction window and the target substance are far enough apart from the scattering range of the target substance, the constituents of the target substance remain in the introduction window even if the melt crystallization due to the supply of high energy is performed repeatedly. Almost no adhesion.
  • the entry window must be transparent to high energy objects.
  • the target substance is opaque to the high energy body, the high energy body is converted to heat.
  • the introduction window becomes naturally non-transparent, so that the function to be fulfilled cannot be performed.
  • the present invention eliminates such an educaity, and thereby realizes a high-energy body supply device excellent in stability and mass productivity.
  • the high-energy supply device and the method for forming a crystallized film of the present invention in which the scattering range is controlled, can stably form a high-quality crystalline semiconductor film on a substrate or an underlayer protective film with high productivity.
  • the scattering range is controlled
  • Unnecessary space in the supply room should be eliminated as much as possible in order to reduce the size of the high energy supply device itself and to facilitate replacement of the atmosphere in the supply room.
  • the closest distance between the wall and the target substance is about 2 mm to about 4 O mm.
  • the scattering range of the target substance changes according to the pressure in the supply chamber. For example 1 0- 5 T scattering range if there in a vacuum of about orr is up to more than about 1 0 cm, comprising the following order of 1 0 mm if any at atmospheric pressure.
  • melt crystallization is to proceed at a pressure higher than the atmospheric pressure, it is sufficient if the distance between the introduction window and the target substance is about 20 mm or more. If a high-energy substance is supplied at a pressure of about 1 O m Tor or less, this distance should be as short as about 5 O mm. Ideally, it is about 100 mm or more. For this reason, a distance of about 5 O mm or more is desired to cope with various pressures in the supply chamber. There is no special upper limit for this distance, but if you dare to set it, it is about 100 Omm. If the length is too long, the volume of the supply chamber will increase, and it will take time to replace the atmosphere, and the device itself will become large and end up.
  • Fig. 3 (A) illustrates the structure of the supply chamber of the high-energy body supply device described in the previous chapter from the viewpoint of gas flow
  • Fig. 3 (B) illustrates at least the high-energy body as an object. It shows the gas flow during the crystallization of the target substance by supplying it to the substrate (such as a thin film formed on the substrate).
  • the high-energy substance supply device of the present invention is provided with pressure adjusting means for generating a desired pressure distribution in the supply chamber 301 or gas flow adjusting means for generating a desired gas flow in the supply chamber.
  • the pressure adjusting means and the gas flow adjusting means include at least the exhaust hole 311 and the gas inflow hole 312 as constituent elements thereof (the exhaust hole takes the exhaust gas in the supply chamber, and the wall of the supply chamber 3). It is provided in a part of 09.
  • the multiple (six in Fig. 3 (A)) gas inlet holes allow the various gases detailed in Chapter (1-1) to flow into the supply chamber.
  • the means and gas flow regulating means can make the pressure near the inlet window 30 6 higher than the pressure near the target substance, and can even make the pressure near the target substance 303 higher than the pressure near the exhaust port.
  • the target substance such as a thin film set on the setting table 2005 is close to the introduction window.
  • Pressure is higher than the pressure near the target substance, or the pressure near the introduction window is higher than the pressure near the target substance (thin film) and the pressure near the target substance (thin film) is higher than the pressure near the exhaust hole In this state, the high energy body 307 is supplied.
  • the gas flow at this time will be described with reference to FIG. 3 (B).
  • a path through which the target substance 303 is irradiated after the high-energy substance is introduced into the supply chamber 301 through the introduction window 303 as the irradiation path 315 in the supply chamber.
  • the high-energy substance that reaches the target substance through the irradiation path allows a part of the high-energy substance to enter the target substance, and another part scatters and reflects from the target substance.
  • the scattered and reflected high-energy body is referred to as “reflection energy integrated” 3 13.
  • the path through which the reflected energy material enters in the supply chamber is a reflected passage 3 14.
  • the pressure distribution and the gas flow 320 adjusted by the pressure adjusting means and the gas flow adjusting means exist in the supply chamber.
  • this gas flow can be controlled so as to go from the introduction window to the target substance in substantially the same direction as the irradiation path, and further from the target substance in the same direction as the reflection path. It is possible to head. This is because the pressure near the introduction window 3 17 is higher than the pressure 3 18 near the target substance, and the pressure near the target substance can be higher than the pressure 3 1 19 near the exhaust port.
  • the gas flow of the target substance such as a thin film from the introduction window toward the target substance in the same direction as the irradiation path, and further from the target substance in the same direction as the reflection path.
  • the high energy material is supplied at, and the melt crystallization is advanced.
  • the constituent elements of metals and semiconductors always evaporate during melting. Also, if the supplied energy is high, the powder is scattered as fine powder.
  • the probability that the evaporated element or the scattered fine powder reaches the introduction window is significantly reduced.
  • FIG. 4 shows the structure of the supply chamber 401 of the high-energy body supply device of the present invention.
  • the high-energy body supply device has at least a high-energy body (laser one light). It has a generation source (not shown in Fig. 4) for generating 407 and a supply chamber for supplying high energy integral to the target substance 403 (metal thin film or semiconductor thin film).
  • the supply chamber has an installation means 405 therein as a function of installing the target substance in the chamber, and the target substance such as the substrate on which the thin film is formed in the first step is installed in the installation means.
  • An introduction window for introducing a high-energy substance into the supply room is provided in a part of the wall surface 409 of the supply room, and the positional relationship between the introduction window 406 and the target substance satisfies the description in Chapter (112).
  • the supply chamber is provided with a pressure adjusting means and a gas flow adjusting means including an exhaust hole 411 and a gas inflow hole 4112, so that the supply chamber is described in detail in section (1-3). Pressure distribution and gas flow are present.
  • the supply room atmosphere follows the description in Chapter (111).
  • the path leading up to irradiation of the target substance after the high-energy substance is introduced into the supply chamber through the introduction window is assumed to be an irradiation path.
  • the introduction window or the installation means is arranged so that the direction of the normal line 4 16 of the target substance such as a thin film is different from the direction of the irradiation path 4 15. Therefore, when crystallizing a thin film, a high-energy substance is supplied to the thin film in a state where the normal direction of the thin film and the irradiation path direction are different. Further, in the high-energy substance supply device of the present invention, an exhaust hole is provided in a normal direction of a target substance such as a thin film.
  • the exhaust hole is provided at the closest position between the target substance and the wall of the supply chamber, the evaporated elements and the scattered fine powder are effectively discharged.
  • the evaporation element and the scattered fine powder have a particularly high ratio in which they fly out in the radiation direction. Therefore, the emission efficiency is improved from this point, and the effects of Chapter (1-13) are more reliably achieved.
  • the high-energy body supply device of the present invention has a path changing means for the reflected energy body so that the reflected energy body 4 13 irradiates the target substance again.
  • the course changing means 418 further has position adjusting means 417 so that the reflected energy body can irradiate a desired position of the target substance such as a thin film.
  • the first position of the thin film is irradiated with a high-energy substance.
  • the reflected energy body changes its course by the course changing means, and irradiates the second position of the thin film again to promote melt crystallization. If the high-energy body has a high velocity like light, the reflected energy body corresponding to this ⁇ -energy body usually becomes the second during the period when the high-energy body first irradiates the first position of the thin film. Start illuminating the location.
  • the first position and the second position may be different, but are preferably substantially equal. This is because the energy use efficiency can be improved and the melting time can be lengthened as described later.
  • the adjustment of the first position and the second position is performed by the position adjusting means.
  • the path changing means consists of optical devices such as mirrors, lenses and prisms, and if it is a charged particle, it consists of an electromagnetic field generator.
  • the position adjustment function is a function that changes the positional relationship (for example, the angle of the mirror) of the optical equipment and fine-tunes the electromagnetic field Yes.
  • Fig. 5 shows an example of the simplest device using light for a high energy body.
  • Reference numeral 506 indicates an inlet window
  • 511 indicates an exhaust hole
  • 521 indicates a gas inlet hole
  • 516 indicates a normal line.
  • the course changing means 5 18 is a mirror
  • the course changing means preferably has a condensing means such as a concave mirror.
  • the reflected light contains a scattered component, but this is because the condensing means condenses the scattered light and re-irradiates it efficiently. After the incident light irradiates the target substance 503 such as a thin film, a part of the light becomes reflected light.
  • the utilization efficiency of the high energy body 507 can be significantly increased.
  • the reflectivity of a semiconductor thin film of ultraviolet light or visible light reaches about 70% or more, and that of a metal thin film reaches about 90% or more. Therefore, the conventional energy use efficiency was about 10% to 30%.
  • the energy use efficiency can be approximately doubled from about 20% to about 50%.
  • Fig. 6 illustrates this effect, taking as an example the case where a laser beam emits a pulse.
  • the vertical axis is the energy intensity (arbitrary unit) at which the high-energy substance actually enters the target substance and contributes to melt crystallization.
  • the reflected energy body irradiates the target substance with a slight time delay according to the distance and speed between the target substance and the course changing means.
  • time at which the energy density of from reflection energy body takes a maximum value and t 2 time of delay t 2 - t! It is.
  • the energy density of the incident high energy body and the energy density of the reflected energy body are superimposed. This is the energy density that actually contributes to melt crystallization in the present application, and is depicted as synthetic light in the example of FIG.
  • the energy use efficiency can be substantially doubled as compared with the conventional one, so o
  • the course changing means has a time adjusting function. This delays the time (t 2 — t, in Fig. 6) when the reflected energy re-irradiates the target substance. (Hereinafter, this time delay is referred to as delay time Called.
  • the time adjusting means 419 can be composed of, for example, a plurality of reflecting means capable of reflecting a high-energy body, and a simple example is depicted in FIG. High engineering energy-If the body is light, the reflection means can be composed of a combination of mirrors.
  • the time adjustment means is a means for changing the path length of the reflected energy body or a means for changing the speed of the reflected energy body.
  • the former is convenient when the high-energy body is light, and the latter is convenient when it is a charged particle.
  • the path length of light can be changed by combining mirrors, and the speed of charged particles can be changed by adjusting the electric field.
  • the delay time By appropriately adjusting the delay time, the time of the high-energy substance irradiated to the target substance can be prolonged. This will be described with reference to FIG.
  • the vertical and horizontal axes in FIG. 7 are the same as those in FIG. Figure 7 the delay time (t, - t 2) outgoing time width of the high-energy bodies have been the (half-value width, the half-width a certain indicated by t a of the incident light in FIG. 7) and the same degree. As a result, the half width of the combined light has almost doubled (indicated by t b in Fig. 7).
  • the target substance is hydrogenated amorphous silicon moth (a-Si: H) formed by plasma enhanced chemical vapor deposition (PECVD), which is composed of xenon-chlorine (Xe) as a high-energy substance.
  • PECVD plasma enhanced chemical vapor deposition
  • Xe xenon-chlorine
  • Excimer laser abbreviated as XeC1 laser, wavelength: 308 nm
  • this thin film has a high hydrogen content and low density, making melt crystallization extremely difficult.
  • the amorphous film does not crystallize at all when the irradiation energy density is less than about 100 mJ ⁇ cm— 2 , and on the contrary, it becomes explosive. Scattering occurs, and eventually no crystallization of the thin film occurs in the entire energy region.
  • time half-width on the contrary the arrow clad amorphous thin film in the following order of 10 OmJ ⁇ cm- 2 irradiation energy density is X e C 1 laser of about 100 ns does not crystallize, 10 OmJ ⁇ cm- 2 Melt crystallization proceeds beautifully at an energy density of about 15 to 15 OmJ ⁇ cm 2 .
  • the high-energy material supply device described in detail in the previous chapter and the crystalline film formed using it are used for semiconductor devices such as TFTs and LSIs, or metal-insulator-metal devices (MIM devices), solar cells, and prints. It can be applied to various thin film electronic devices such as substrates, and dramatically improves these performances.
  • semiconductor devices such as TFTs and LSIs, or metal-insulator-metal devices (MIM devices), solar cells, and prints. It can be applied to various thin film electronic devices such as substrates, and dramatically improves these performances.
  • MIM devices metal-insulator-metal devices
  • FIGS. 8 (a) to 8 (d) are schematic cross-sectional views showing a manufacturing process of a thin film semiconductor device (a so-called TFT) forming a MIS type field effect transistor.
  • TFT thin film semiconductor device
  • a general-purpose non-alkali glass is used as an example of the substrate.
  • a base protective film 802 which is an insulating material, is formed on a substrate 801 by an atmospheric pressure chemical vapor deposition method (APCVD method), a PECVD method, or a sputtering method.
  • APCVD method atmospheric pressure chemical vapor deposition method
  • PECVD method a PECVD method
  • a sputtering method a semiconductor film such as an intrinsic silicon film, which is to be an active layer of the thin film semiconductor device later.
  • Semiconductor films are formed by chemical vapor deposition (CVD) such as PECVD, APCVD, or LPCVD, or physical vapor deposition (PVD) such as sputtering or evaporation.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • melt crystallization is advanced (second step regarding the semiconductor film).
  • This process is usually called crystallization if the initially deposited thin film is amorphous or a mixed crystal of amorphous and microcrystalline.
  • the first deposited thin film is polycrystalline, this process is called recrystallization.
  • crystallization both They are simply referred to as crystallization and do not distinguish between them.
  • the surface of the thin film is melt-crystallized by supplying the high-energy substance, both of them correspond to the melt crystallization of the present application. Melt crystallization is a disappointing technique from the perspective of forming high quality crystalline thin films with high productivity on large substrates.
  • the energy supply time (irradiation time in the case of laser light) is generally as short as about 100 ⁇ s to about 500 ns, and the energy supply area is generally short. Since the (irradiated area) is local to the entire substrate, the entire substrate is not heated to a high temperature at the same time when the thin film is crystallized, so that there is no deformation or crack due to the heat of the substrate. It is.
  • a crystalline semiconductor film polycrystalline silicon film
  • this crystalline semiconductor film is processed into an island shape, and an active layer semiconductor to be an active layer of a transistor later.
  • a membrane 803 is created.
  • a gate insulating film 804 is formed by a CVD method, a PVD method, or the like. (Fig. 8 (b))
  • a metal thin film to be the gate electrode 805 is deposited by a PVD method or a CVD method. Since the gate electrode and the gate wiring are usually made of the same material in the same process, this material has a low electric resistance and the highest temperature that will be applied during the subsequent thin film electronic device manufacturing process (about 350 ° C here). It must be a substance that can withstand chemicals and chemicals.
  • a tantalum (T a) film having such properties is formed by a sputtering method (first step for metal).
  • a tantalum thin film formed by the sputtering method has a structure, and its specific resistance is as high as about 200 uQcm. Also, the internal stress is strong and it is easy to break when used as wiring.
  • a high-energy substance as a laser beam is supplied to the tantalum thin film (second step for metal) to improve the quality of the thin film.
  • the melt crystallization of the tantalum metal thin film is advanced by the method described in detail in the previous section, the crystallized film becomes a twin-layer structure (Ta).
  • the tantalum with a twin structure has a cubic crystal system, and its crystal structure is body-centered cubic (b c c).
  • the specific resistance of this tantalum structure is about 2 cm to about 60 ⁇ cm, and its internal stress is weak. This is because it is significantly better as a wiring material than the previous tantalum structure.
  • the shape processing is performed.
  • impurity ions are implanted into the active layer semiconductor film, so that the source An in area and a channel forming area 806, 807, 808 are created.
  • the gate electrode serves as a mask for ion implantation, the channel forming region has a self-aligned structure formed only under the gate electrode.
  • Impurity ion implantation is performed by using a mass non-separation type ion implanter to implant hydride and hydrogen of the impurity element to be implanted.
  • CMOS TFT Only desired impurity elements are implanted using a doving method and a mass separation type ion implanter. Two types of ion implantation methods can be applied.
  • CMOS TFT When fabricating a CMOS TFT, one of NMOS or PMOS is alternately covered with a mask using an appropriate mask material such as polyimide resin, and ion implantation is performed using the above-described method.
  • an interlayer insulating film 809 is formed by a C VD method or a P VD method. After ion implantation and formation of the interlayer insulating film, heat treatment is performed for several tens of minutes to several hours in an appropriate thermal environment of about 350 ° C or less to activate the implanted ions and bake the interlayer insulating film. After the formation of the interlayer insulating film, contact holes are formed on the source / drain, and the source / drain extraction electrodes and wirings 810 and 811 are formed. At this time, the melt crystallization of the metal thin film described in the previous section may be applied to the metal forming the source / drain electrodes and the wiring, similarly to the gate electrode and the gate wiring. After the crystalline metal film is formed, the thin film is processed into an electrode or a wiring to complete a thin film semiconductor device. (No. 8 (d))
  • Conductive material such as a metal as a substrate to which the present invention may be adaptive, silicon force one byte (S i C), alumina (A 1 2 0 3), Ceramic such as aluminum nitride (A 1 N) Materials, transparent insulating materials such as fused quartz and glass, semiconductor substrates such as silicon wafers, and LSIs fabricated from them, and crystalline insulating materials such as sapphire (orthogonal A I2O3 crystals) are used.
  • Conductive material such as a metal as a substrate to which the present invention may be adaptive, silicon force one byte (S i C), alumina (A 1 2 0 3), Ceramic such as aluminum nitride (A 1 N) Materials, transparent insulating materials such as fused quartz and glass, semiconductor substrates such as silicon wafers, and LSIs fabricated from them, and crystalline insulating materials such as sapphire (orthogonal A I2O3 crystals) are used.
  • Inexpensive general-purpose glass substrates include # 7059 glass and # 1737 glass manufactured by Koingu Japan KK, 0A-12 glass manufactured by Nippon Electric Glass Co., Ltd., and NA35 glass manufactured by NH Techno Glass Co., Ltd. Can be done.
  • a thin film semiconductor device is manufactured using a crystalline semiconductor thin film or metal wiring is performed using a crystalline metal thin film, at least part of the surface of the substrate is made of an insulating material regardless of the type of the substrate.
  • a crystalline thin film is formed on the insulating material. This The insulating material is referred to as a base protective film in the present application.
  • a crystalline film may be formed directly on the fused quartz substrate because the substrate itself is an insulating substance.
  • silicon oxide film (S i O x: 0 ⁇ x ⁇ 2)
  • Ya silicon nitride film (S i 3 ⁇ ⁇ : 0 ⁇ 4) was formed as a base protective film in a molten quartz substrate an insulating material, such as A crystalline thin film may be formed later.
  • a crystalline film such as a semiconductor film may be directly formed on normal glass, which is an insulating material, but mobile ions such as sodium (Na) contained in the glass may be used.
  • a crystalline film after forming a base protective film on a glass substrate with an insulating material such as a silicon oxide film or a silicon nitride film so as not to mix into the thin film.
  • an insulating material such as a silicon oxide film or a silicon nitride film
  • the resulting thin-film electronic devices have increased stability without any change in operating characteristics over long-term use or use under high voltage.
  • the thin film is formed on the underlying protective film except when a crystalline insulating material such as sapphire is used as the substrate.
  • a base protective film it is preferable to provide a base protective film so that the sintering aid raw material added in the ceramic does not diffuse into the film.
  • an underlayer protective film is indispensable to ensure insulation.
  • an interlayer insulating film between transistors and wirings plays a role of a base protective film.
  • any kind of crystalline substance can be the target substance.
  • the present application is applicable to melt crystallization of diamond and the like.
  • the effect of the invention appears most simply and reliably when a semiconductor thin film or a metal thin film is selected as a target substance.
  • Metals can be adapted for all types of metals. Particularly effective are substances such as tantalum described in Section (1-5), which change the crystal phase by supplying a high-energy substance or melt crystallization. Other metals that increase the crystal grain size as a result of melt crystallization are also preferred.
  • No. Semiconductor thin films are most suitable for adapting the present invention. This is because the semiconductor thin film formed in the first step is amorphous, and even if it is crystalline, its quality is low. This is because these low-grade thin films are easily transformed into excellent crystalline thin films by performing the second step of the present application.
  • the types of semiconductor films to which the present invention is applied include silicon (Si) and germanium.
  • P silicon - germanium 'gallium' arsenide
  • N-type semiconductor film to which a donor element such as As) or antimony (Sb) is added or an element such as boron (B), aluminum (A1), gallium (Ga), indium (In) or the like
  • B aluminum
  • Ga gallium
  • In indium
  • the semiconductor film as a gas containing constituent elements of the semiconductor film is Ru Yes in silicon (S i), they monosilane (S i H, disilane (S i 2 H 6), bets Rishiran
  • Si 3 H 8 if there a silane such as dichlorosilane (S iH 2 C 1.
  • Germanate two ⁇ beam of (Ge) is present in the semiconductor film to use a germane (GeH 4) or the like, phosphorus (P ) Or boron (B), or phosphine (PH 3 ) diborane (B 2 H 6 ) is also used when adding these to a semiconductor film or an intrinsic semiconductor film.
  • germaneH 4 germane
  • phosphorus (P ) Or boron (B), or phosphine (PH 3 ) diborane (B 2 H 6 ) is also used when adding these to a semiconductor film or an intrinsic semiconductor film.
  • chemical substances containing the elements constituting various semiconductor films are used, hydrides of the constituent elements are more preferable since a part of these gases always remain in the semiconductor films, for example, dichlorsilane (SiH).
  • Chlorine (C 1) always remains in the silicon film formed from C 1, regardless of the amount, and when this silicon film is used for the active layer of a thin film semiconductor device, residual chlorine causes deterioration of transistor characteristics. configuration than c thus dichlorosilane becomes Towards monosilane (S i which is an hydride-containing is preferred. (2— 3. Laser beam as high energy body)
  • KrF excimer laser wavelength 248 nm
  • XeCl excimer laser wavelength 308 nm
  • excimer lasers an ArF excimer laser and an XeF excimer laser (wavelength: 351 nm) can also be used.
  • YAG laser carbon dioxide laser
  • Ar main line laser wavelength 514.5 nm
  • Ar subline laser wavelength 488 nm
  • HeNe laser wavelength 632.8 nm
  • He Cd laser wavelength 441.6 nm
  • various dye lasers are also available.
  • the target substance is a semiconductor film containing silicon as the main component
  • the absorption coefficient in the crystalline component is larger than that in the crystalline component. This means that in a system in which amorphous and crystalline materials coexist, the amorphous component absorbs more energy and the temperature rises more easily than the crystalline component.
  • amorphous crystallization is more likely to occur than crystalline recrystallization.
  • a higher quality of the crystallized film can be obtained when the supplied energy is higher as long as the semiconductor film is not damaged. If the temperature of the crystalline component rises more easily, the semiconductor film may be damaged while the amorphous component still remains, resulting in the operation. In other words, the film will be damaged before crystallization is completely completed.
  • the XeF laser and the like do not have this adverse effect and can be said to be very suitable for melt crystallization of silicon-based semiconductor films.
  • it is important to select the type of high energy integral so that the absorption coefficient of the target substance before the supply of the high energy substance is larger than that of the crystalline target substance after the supply of the high energy substance.
  • KrF lasers and XeC1 lasers are suitable for crystallization of thin films having a semiconductor film thickness of about 50 nm or less because of their large absorption coefficient in semiconductor films mainly containing silicon. Since the absorption coefficient of the XeF laser and the HeCd laser is slightly smaller than that of the KrF laser and the XeC1 laser, the thickness of the silicon-based semiconductor thin film of about 50 nm to about 1000 nm is small. Suitable for crystallization. Since the absorption coefficient of the Ar main line laser, the Ar sub line laser, and the HeNe laser in the semiconductor film is small, it is suitable for crystallization of a semiconductor thin film having a thickness of about 1000 nm or more.
  • the melt crystallization in which a high-energy substance is supplied to a target substance to advance it is performed in a very simple and stable manner, and at the same time, a high-quality crystalline film is easily formed. It can be formed. Further, such a crystalline film enables the production of excellent thin-film electronic devices. Specifically, it has the following effects.
  • Effect 4 When a high-energy substance such as laser irradiation is supplied to a target substance to promote melt crystallization, generally, the higher the supplied energy, the higher the quality of the obtained crystal. In the present application, since a high-energy substance can be supplied under atmospheric pressure, the evaporation and scattering phenomenon can be suppressed even when the supply energy is increased, and therefore the quality of the crystalline film is also improved. Effect 5) Surface control plays an important role in obtaining a good crystalline film. In the crystallization method of the present invention, this control is sufficiently performed, so that an excellent crystalline film can be obtained. Further, since the reconstructed surface state is controlled in the same manner for each melt crystallization, the film characteristics of the crystalline film are also extremely stable.
  • FIG. 1 is a view showing a conventional laser irradiation apparatus.
  • FIG. 2 is a view showing a high energy integrated supply apparatus of the present invention.
  • FIG. 3 is a view showing a high-energy substance supply device of the present invention.
  • FIG. 4 is a view showing a high-energy-body supply device of the present invention.
  • Fig. 5 FIG. 2 is a view showing a high energy body supply device of the present invention.
  • FIG. 6 is a diagram showing a change in energy time of a high-energy substance received by a target substance in the present invention.
  • FIG. 7 is a diagram showing a change in energy time of a high-energy substance received by a target substance in the present invention.
  • FIG. 8 (a) to 8 (d) are cross-sectional views of an element in each step of manufacturing a thin film semiconductor device according to an embodiment of the present invention.
  • FIG. 9 is a diagram showing a configuration of a transmission type liquid crystal display device using the present invention.
  • FIG. 10 is a diagram showing a configuration of an electronic device using the present invention.
  • FIG. 11 is a diagram showing an example of an electronic apparatus (a liquid crystal projector) using the present invention.
  • FIG. 11 is a diagram showing another example (a personal computer) of an electronic device using the present invention.
  • FIG. 12 is a diagram showing another example (pager) of an electronic device using the present invention.
  • a base protective film consisting of a silicon oxide film is formed on a large glass substrate of 360 mm x 475 mm x l.1 mm by PEC VD method, and an intrinsic silicon film is continuously deposited on this base protective film without breaking vacuum. .
  • the thickness of the underlayer protective film is 300 nm, and the semiconductor film thickness is 60 nm.
  • the glass substrate which is in equilibrium with room temperature, is placed in a PECVD system where the temperature of the lower plate electrode is maintained at 380 ° C.
  • the conditions for depositing the silicon film are as follows.
  • Ar 3000 SC CM (raw material concentration 3.23%)
  • High frequency output: RF 600W (0.228 W / cm 2 )
  • the deposition rate of the semiconductor film was 0.365 nm / s, and the thickness of the semiconductor film was 6 Onm.
  • the thermal desorption gas pump Troscobee (TDS) The measured hydrogen concentration in the silicon film was 10.39 at%. According to transmission electron microscopy observation, this silicon film is mainly composed of a mixed crystal and an amorphous component having a columnar structure. Raman spectroscopy of the silicon film showed Raman shift from the crystal component only at around 52 cm- ', indicating that the silicon film of this example was of mixed crystal quality.
  • the silicon film thus obtained is irradiated with one laser beam to promote melt crystallization (second step for silicon).
  • Melt crystallization was performed with a high-energy material supply device having a laser irradiation chamber (supply chamber) as shown in Fig. 4. Irradiation laser light has wavelength 2
  • the half width of the 1 ⁇ r F excimer laser of 4 8 1 111 is about 33 ns, but the reflected light re-enters with a delay time of about 30 ns due to the time adjustment means. However, the effective half width of time is about 60 ns.
  • the time adjustment means consists of a combination of mirrors, and the total optical path length of the reflected light is about 9 m.
  • the incident light was incident at an angle of about 60 degrees from the normal. Since the closest distance between the thin film and the supply chamber wall is 20 mm, the distance between the introduction window and the irradiation position on the thin film is about 40 mm.
  • the laser beam has a linear shape with a width of 120 1m and a length of 38 cm.
  • the amount of overlap in the beam width direction for each irradiation is 90% of the beam width. Therefore, the beam advances 12 ⁇ m for each irradiation, and the same point on the semiconductor film receives 10 laser irradiations.
  • Laser light energy density is 1
  • Laser single light irradiation is performed under atmospheric pressure.
  • a gas mixture of argon and monosilane is introduced into the supply chamber at 1 slm through the gas inlet, and discharged through the exhaust hole on the normal of the thin film.
  • the gas flows from the introduction window and the route change means (including the position adjustment function and time adjustment means) to the irradiation position on the thin film, and further from the irradiation position to the exhaust hole.
  • the silane concentration in argon is about 100 ppm, so the partial pressure of silane during laser irradiation is about 76 mTorr.
  • the substrate temperature during laser irradiation is room temperature of about 25 ° C.
  • the semiconductor film crystallized in this way had a crystallization rate of 98% and a film thickness of 55 nm as measured by multi-wavelength dispersion ebometry.
  • Half width unforced 5 1 around 5 cm 1 showing the Ramanshifu bets from crystalline component by Raman spectroscopy 4. 4 cm- 'of appears sharp peak, that high crystallinity extremely high quality film was created Is telling.
  • this crystalline semiconductor film is patterned, and an active layer semiconductor film to be an active layer of a transistor is formed later.
  • a gate insulating film is formed by PECVD. Gate insulation made of silicon oxide film
  • the film is made of TEOS (S i— (0-CH 2 -CH 3 ) 4), oxygen (0 2 ), and water (H 20 ) as source gases, and argon is used as a diluent gas at a substrate surface temperature of 350 ° C. Form a film with a thickness of 100 nm.
  • the oxide film is heat-treated at a temperature of about 350 ° C in an atmosphere containing about 0.2 atm of oxygen (partial pressure) and about 80 ° C of water vapor at a dew point of about 3 hours. The quality of the insulating film was improved.
  • a tantalum (Ta) thin film serving as a gate electrode is deposited by a sputtering method (first step for tantalum).
  • the substrate temperature at the time of sputtering was 150 ° C, and the film thickness was 500 nm.
  • laser irradiation is performed on the obtained tantalum film (second step for tantalum).
  • the laser irradiation conditions are the same as those at the time of crystallization of the semiconductor film, except that the atmosphere gas was changed to a mixed gas of argon and hydrogen.
  • the concentration of hydrogen in argon is about 1%, so the partial pressure of hydrogen during laser irradiation is approximately 7.6 T orr.
  • the laser-irradiated tantalum film had a string structure as described above, and its specific resistance was about 40 ⁇ cm.
  • CMOS TFT having a CMOS structure was formed.
  • CMOS TFT cover the PMOS TFT with polyimide resin.
  • NMOS TFT cover the NMOS TFT with polyimide resin to create a CM0S TFT. I'm doing Impurity ion implantation is performed using a mass non-separable ion implantation apparatus.
  • phosphine (PH 3 ) As the source gas, phosphine (PH 3 ) with a concentration of about 5% diluted in hydrogen is used for NMOS.
  • the implantation amount of all ions including PH 3 + and H 2 + is 1 ⁇ 10 16 cm 2
  • the concentration of phosphorus atoms in the source / drain regions is about 3 ⁇ 10 2 ° cm- 3 .
  • the substrate temperature at the time of ion implantation was 250 ° C. Also PMO S
  • diborane (B 2 H 6 ) with a concentration of about 5% diluted in hydrogen is used as a source gas.
  • the implantation amount of all ions including B 2 H 6 + and H 2 + is 1 ⁇ 10 16 cm ⁇ 2
  • the boron atom concentration in the source / drain regions is about 3 ⁇ 10 2 . cm.
  • the substrate temperature during ion implantation was 250 ° C.
  • an interlayer insulating film composed of a silicon oxide film is formed by PECVD using TEOS. You.
  • the substrate surface temperature when forming the interlayer insulating film is 350 ° C and the film thickness is 500 nm. Thereafter, heat treatment is performed for 1 hour in an oxygen atmosphere at 350 ° C. to activate the implanted ions and bake the interlayer insulating film. Subsequently, a contact hole is formed on the source and drain, and aluminum (A1) is deposited by a sputtering method.
  • the substrate temperature at the time of spattering was 150 ° C and the film thickness was 500 nm.
  • the thin film semiconductor device is completed by patterning the aluminum thin film used as the source and drain extraction electrodes and wiring.
  • the transistor characteristics of the prototype thin film semiconductor device were measured.
  • V t h 2.13 ⁇ 0.13 V
  • V t h -1.11 ⁇ 0.1 0.1 V
  • CMOS thin film having the same process maximum temperature (350 ° C.) as a conventional a-Si TFT and having uniform high mobility on a large general-purpose glass substrate.
  • a semiconductor device was manufactured.
  • the TFT obtained in this example has a good quality. Since the transistor has a crystalline semiconductor film and a gate electrode, the reliability of the transistor is extremely high, and stable operation is performed for a long time.
  • the uniformity of laser crystallization was a very important issue, both within the substrate and between lots.
  • both the on-current and the off-current can greatly reduce their variation.
  • This remarkable improvement in uniformity means that the crystalline silicon film of the present invention is excellent, and that the laser irradiation device (high-energy material supply device) is steadily performing crystallization. . Further, since the tantalum film has a small stress and a low resistance value, when the thin film semiconductor device of the present invention is applied to the LCD, uniform high image quality can be obtained over the entire LCD screen. Further, when a circuit is formed by the thin film semiconductor device of the present invention, not only a simple circuit such as a simple shift register and an analog switch, but also a level shifter, a digital / analog Furthermore, more complicated circuits such as a clock generation circuit, a gamma correction circuit, and a timing controller circuit can be easily formed.
  • An active matrix substrate in which the CMOS driver (column-side driver) and the scanning driver (row-side driver) were built in the CMOS thin-film semiconductor device obtained in Example 1 was manufactured.
  • the digital data driver of the present embodiment includes a clock signal line and a clock generation circuit, a shift register circuit, a NOR gate, a digital video signal line, a latch circuit 1, a latch pulse line, a latch circuit 2, a reset line.
  • the source electrode, the source wiring, and the drain electrode (pixel electrode) are made of aluminum, which is a reflection type. It is L CD.
  • a liquid crystal panel using the active matrix substrate thus obtained as one of a pair of substrates was manufactured.
  • the liquid crystal sandwiched between a pair of substrates is a polymer dispersed liquid crystal (PDLC) in which black pigment is dispersed, and a normally black mode (black display when no voltage is applied to the liquid crystal) reflective LCD panel.
  • PDLC polymer dispersed liquid crystal
  • the obtained liquid crystal panel was connected to external wiring to manufacture a liquid crystal display device.
  • the on-resistance and the transistor capacitance of the NMOS and the PMOS are equal to each other, and the TFT has high performance, the parasitic capacitance of the transistor is extremely small, and the characteristics are uniform over the entire substrate.
  • This liquid crystal display device was incorporated into the housing of a full-color portable personal computer (notebook PC).
  • 6-bit digital data driver The driver has a built-in active matrix board, and the digital video signal from the device is directly input to the liquid crystal display device, which simplifies the circuit configuration and reduces power consumption. It became small. Since the liquid crystal thin film semiconductor device has high performance, this notebook PC is a good electronic device having a very beautiful display screen. In addition, reflecting the fact that the liquid crystal display device is of a reflective type having a high aperture ratio, the need for a backlight has been eliminated, and thus the battery can be reduced in size and weight and used for a long time. As a result, an ultra-compact and lightweight electronic device that can be used for a long time and has a beautiful display screen has been created.
  • FIG. 9 shows the entire example. That is, the liquid crystal display device includes a backlight 900, a polarizing plate 91, an active matrix substrate 903 on which a driving circuit 902 is mounted, a liquid crystal 904, and a counter substrate 905. And a polarizing plate 906.
  • An electronic device configured using the liquid crystal display device of the above-described embodiment includes a display information output source 100000, a display information processing circuit 1002, a display driving circuit 1004 shown in FIG. Display panel such as LCD panel 106, clock generation circuit 1008, and power supply circuit 1 It is configured to include 0 10.
  • the display information output source 1000 is configured to include a memory such as a ROM or a RAM, a tuning circuit that tunes and outputs a television signal, and the like, and outputs a video signal based on a clock from the clock generation circuit 1008. Outputs display information such as signals.
  • the display information processing circuit 1002 processes and outputs display information based on the clock from the clock generation circuit 1008.
  • the display information processing circuit 1002 can include, for example, an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, or the like.
  • the display drive circuit 104 includes a scan-side drive circuit and a data-side drive circuit, and drives the liquid crystal panel 1006 for display.
  • the power supply circuit 110 supplies power to each of the above-described circuits.
  • the electronic devices having such a configuration include a liquid crystal projector shown in FIG. 11, a personal computer (PC) and an engineering workstation (EWS) for multimedia shown in FIG. 12, and a pager shown in FIG. Or, a mobile phone, a word processor, a television, a view finder type or a monitor direct view type video table recorder, an electronic organizer, an electronic desk calculator, a power navigation device, a POS terminal, a device with a touch panel, etc.
  • the liquid crystal projector shown in FIG. 11 is a projection type projector using a transmissive liquid crystal panel as a light valve, and uses, for example, a three-plate prism type optical system.
  • the projection light emitted from the lamp unit 1102 of the white light source is provided inside the light guide 110 4 by a plurality of mirrors 110 6 and 2.
  • the three dichroic mirrors 1 1 108 divide the image into three primary colors, R, G, and B, and display images of each color.
  • the light modulated by the respective liquid crystal panels 1110R, 1110G, and 1110B enters the dichroic prism 111 from three directions.
  • the dichroic prism 1 1 1 2 the light of red R and blue B is bent 90 °, and the light of green G goes straight, so that the images of each color are synthesized, and it is projected on a screen etc. through the projection lens 1 1 1 4. A blank image is projected.
  • the personal convenience device 1200 shown in FIG. 12 has a main body portion 124 having a keyboard 122 and a liquid crystal display screen 126.
  • the pager 1300 shown in Fig. 13 has a liquid crystal display Plate 1304
  • the two elastic conductors 1311 413 16 and the film carrier tape 1318 connect the liquid crystal display substrate 1304 and the circuit substrate 1308.
  • the liquid crystal display substrate 1344 is one in which liquid crystal is sealed between two transparent substrates 1304a and 1344b, thereby providing at least a dot matrix type liquid crystal display.
  • a panel is configured.
  • a drive circuit 1004 shown in FIG. 20 or a display information processing circuit 1002 can be formed on one of the transparent substrates. Circuits not mounted on the liquid crystal display substrate 1304 are external circuits of the liquid crystal display substrate. In the case of FIG. 23, they can be mounted on the circuit substrate 1308.
  • a circuit board 13 08 is required in addition to the liquid crystal display board 134, but a liquid crystal display device is used as one component for electronic equipment.
  • the minimum unit of the liquid crystal display device is the liquid crystal display substrate 134.
  • a liquid crystal display substrate 1304 fixed to a metal frame 1302 serving as a housing can be used as a liquid crystal display device, which is a component for electronic devices.
  • the liquid crystal display substrate 134 and the light guide 1306 having the pack light 130a are provided in the metal frame 1302.
  • a liquid crystal display device can be configured by incorporating the liquid crystal display device.
  • the present invention is not limited to the above embodiments, and various modifications can be made within the scope of the present invention.
  • the present invention can be applied not only to the above-described driving of various liquid crystal panels, but also to an electroluminescent device and a plasma display device.
  • the high-energy substance supply device of the present invention can produce a high-quality crystallized film in a distressed and stable manner. Further, the crystalline film thus obtained can be adapted to thin film electronic devices such as thin film semiconductor devices, and the performance thereof is dramatically improved. Therefore, according to the present invention, for example, a high-performance process using a low-temperature process that can use an inexpensive glass substrate is possible. A thin-film semiconductor device can be manufactured.
  • the present invention is applied to the manufacture of an active matrix liquid crystal display device, a large, high-quality liquid crystal display device can be easily and stably manufactured. Furthermore, when applied to the manufacture of other electronic circuits, high-quality electronic circuits can be easily and stably manufactured.
  • the thin-film semiconductor device of the present invention is inexpensive and has high performance, it is optimally used as an active matrix substrate for an active-matrix liquid crystal display device. It is particularly suitable as an active matrix board with a built-in driver that requires particularly high performance.
  • the liquid crystal display device to which the present invention is applied is inexpensive and has high performance, the liquid crystal display device is most suitable for various displays including a full-color notebook PC.
  • the thin-film electronic device of the present invention is inexpensive and has high performance, it will generally be widely accepted.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

Cette invention concerne un dispositif permettant d'obtenir un corps d'une énergie élevée, lequel corps est destiné à la production stable d'un film cristallisé par fusion et d'une grande qualité. Cette invention concerne également un procédé de formation d'un film cristallin. La cristallisation par fusion n'entraîne pas de contamination du dispositif et permet de gérer la reconstruction de la surface du film cristallisé. L'efficacité d'utilisation d'un corps d'une énergie élevée peut en outre être améliorée en réutilisant un corps à énergie réfléchie.
PCT/JP1997/000213 1996-01-30 1997-01-30 Dispositif permettant d'obtenir un corps d'une energie elevee, procede de formation d'un film cristallin, et procede de fabrication d'un composant electronique possedant un film fin WO1997028559A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1353996 1996-01-30
JP8/13539 1996-01-30
JP4902196 1996-03-06
JP8/49021 1996-03-06

Publications (1)

Publication Number Publication Date
WO1997028559A1 true WO1997028559A1 (fr) 1997-08-07

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PCT/JP1997/000213 WO1997028559A1 (fr) 1996-01-30 1997-01-30 Dispositif permettant d'obtenir un corps d'une energie elevee, procede de formation d'un film cristallin, et procede de fabrication d'un composant electronique possedant un film fin

Country Status (3)

Country Link
KR (1) KR100518922B1 (fr)
CN (2) CN1316556C (fr)
WO (1) WO1997028559A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093738A (ja) * 2000-09-18 2002-03-29 Toshiba Corp 多結晶半導体膜の製造装置
JP2002118076A (ja) * 2000-08-31 2002-04-19 Sharp Corp シリコン膜のエキシマレーザー処理時に多結晶シリコン膜に混入する酸素量を制御する装置
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP2006253285A (ja) * 2005-03-09 2006-09-21 Sumitomo Heavy Ind Ltd レーザ照射装置及びレーザ照射方法
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890722A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置
JPS58122036A (ja) * 1982-01-12 1983-07-20 Matsushita Electric Ind Co Ltd 多結晶体膜の製造方法
JPS59121913A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置の製造方法
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH02217476A (ja) * 1989-12-13 1990-08-30 Shunpei Yamazaki 被膜形成方法
JPH02271611A (ja) * 1989-04-13 1990-11-06 Sanyo Electric Co Ltd 多結晶シリコンの生産方法
JPH06163406A (ja) * 1992-11-17 1994-06-10 Ricoh Co Ltd 光源装置並びにそれを用いた材料製造装置および材料製造方法
JPH06333823A (ja) * 1993-05-24 1994-12-02 Fuji Xerox Co Ltd 多結晶シリコン膜の製造方法、薄膜トランジスタの製造方法及びリモートプラズマ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163018A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol Ｓｉ薄膜結晶層の製造方法
JPH05299339A (ja) * 1991-03-18 1993-11-12 Semiconductor Energy Lab Co Ltd 半導体材料およびその作製方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890722A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置
JPS58122036A (ja) * 1982-01-12 1983-07-20 Matsushita Electric Ind Co Ltd 多結晶体膜の製造方法
JPS59121913A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置の製造方法
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH02271611A (ja) * 1989-04-13 1990-11-06 Sanyo Electric Co Ltd 多結晶シリコンの生産方法
JPH02217476A (ja) * 1989-12-13 1990-08-30 Shunpei Yamazaki 被膜形成方法
JPH06163406A (ja) * 1992-11-17 1994-06-10 Ricoh Co Ltd 光源装置並びにそれを用いた材料製造装置および材料製造方法
JPH06333823A (ja) * 1993-05-24 1994-12-02 Fuji Xerox Co Ltd 多結晶シリコン膜の製造方法、薄膜トランジスタの製造方法及びリモートプラズマ装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118076A (ja) * 2000-08-31 2002-04-19 Sharp Corp シリコン膜のエキシマレーザー処理時に多結晶シリコン膜に混入する酸素量を制御する装置
JP2002093738A (ja) * 2000-09-18 2002-03-29 Toshiba Corp 多結晶半導体膜の製造装置
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP4529414B2 (ja) * 2003-10-29 2010-08-25 セイコーエプソン株式会社 電気光学装置用基板の製造方法
JP2006253285A (ja) * 2005-03-09 2006-09-21 Sumitomo Heavy Ind Ltd レーザ照射装置及びレーザ照射方法
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置
JP4618515B2 (ja) * 2006-03-23 2011-01-26 株式会社Ｉｈｉ レーザアニール装置

Also Published As

Publication number Publication date
CN1131546C (zh) 2003-12-17
CN1316556C (zh) 2007-05-16
CN1178601A (zh) 1998-04-08
CN1426086A (zh) 2003-06-25
KR100518922B1 (ko) 2006-01-27
KR19980703115A (ko) 1998-10-15

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