CN1316556C - 高能体供给装置、结晶性膜的形成方法和薄膜电子装置的制造方法 - Google Patents

高能体供给装置、结晶性膜的形成方法和薄膜电子装置的制造方法 Download PDF

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Publication number
CN1316556C
CN1316556C CNB021426201A CN02142620A CN1316556C CN 1316556 C CN1316556 C CN 1316556C CN B021426201 A CNB021426201 A CN B021426201A CN 02142620 A CN02142620 A CN 02142620A CN 1316556 C CN1316556 C CN 1316556C
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CN
China
Prior art keywords
film
energy body
laser
high energy
crystallinity
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Expired - Fee Related
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CNB021426201A
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English (en)
Chinese (zh)
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CN1426086A (zh
Inventor
阿部裕幸
宫坂光敏
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Seiko Epson Corp
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Seiko Epson Corp
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Publication of CN1426086A publication Critical patent/CN1426086A/zh
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Publication of CN1316556C publication Critical patent/CN1316556C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CNB021426201A 1996-01-30 1997-01-30 高能体供给装置、结晶性膜的形成方法和薄膜电子装置的制造方法 Expired - Fee Related CN1316556C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP13539/1996 1996-01-30
JP13539/96 1996-01-30
JP1353996 1996-01-30
JP49021/96 1996-03-06
JP49021/1996 1996-03-06
JP4902196 1996-03-06

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN97190050A Division CN1131546C (zh) 1996-01-30 1997-01-30 结晶性膜的形成方法

Publications (2)

Publication Number Publication Date
CN1426086A CN1426086A (zh) 2003-06-25
CN1316556C true CN1316556C (zh) 2007-05-16

Family

ID=26349357

Family Applications (2)

Application Number Title Priority Date Filing Date
CN97190050A Expired - Fee Related CN1131546C (zh) 1996-01-30 1997-01-30 结晶性膜的形成方法
CNB021426201A Expired - Fee Related CN1316556C (zh) 1996-01-30 1997-01-30 高能体供给装置、结晶性膜的形成方法和薄膜电子装置的制造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN97190050A Expired - Fee Related CN1131546C (zh) 1996-01-30 1997-01-30 结晶性膜的形成方法

Country Status (3)

Country Link
KR (1) KR100518922B1 (fr)
CN (2) CN1131546C (fr)
WO (1) WO1997028559A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580053B1 (en) * 2000-08-31 2003-06-17 Sharp Laboratories Of America, Inc. Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
JP2002093738A (ja) * 2000-09-18 2002-03-29 Toshiba Corp 多結晶半導体膜の製造装置
JP4529414B2 (ja) * 2003-10-29 2010-08-25 セイコーエプソン株式会社 電気光学装置用基板の製造方法
JP2006253285A (ja) * 2005-03-09 2006-09-21 Sumitomo Heavy Ind Ltd レーザ照射装置及びレーザ照射方法
JP4618515B2 (ja) * 2006-03-23 2011-01-26 株式会社Ｉｈｉ レーザアニール装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122036A (ja) * 1982-01-12 1983-07-20 Matsushita Electric Ind Co Ltd 多結晶体膜の製造方法
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH02217476A (ja) * 1989-12-13 1990-08-30 Shunpei Yamazaki 被膜形成方法
JPH02271611A (ja) * 1989-04-13 1990-11-06 Sanyo Electric Co Ltd 多結晶シリコンの生産方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890722A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置
JPS59121913A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置の製造方法
JPS6163018A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol Ｓｉ薄膜結晶層の製造方法
JPH05299339A (ja) * 1991-03-18 1993-11-12 Semiconductor Energy Lab Co Ltd 半導体材料およびその作製方法
JPH06163406A (ja) * 1992-11-17 1994-06-10 Ricoh Co Ltd 光源装置並びにそれを用いた材料製造装置および材料製造方法
JPH06333823A (ja) * 1993-05-24 1994-12-02 Fuji Xerox Co Ltd 多結晶シリコン膜の製造方法、薄膜トランジスタの製造方法及びリモートプラズマ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122036A (ja) * 1982-01-12 1983-07-20 Matsushita Electric Ind Co Ltd 多結晶体膜の製造方法
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH02271611A (ja) * 1989-04-13 1990-11-06 Sanyo Electric Co Ltd 多結晶シリコンの生産方法
JPH02217476A (ja) * 1989-12-13 1990-08-30 Shunpei Yamazaki 被膜形成方法

Also Published As

Publication number Publication date
KR19980703115A (ko) 1998-10-15
CN1131546C (zh) 2003-12-17
CN1426086A (zh) 2003-06-25
WO1997028559A1 (fr) 1997-08-07
KR100518922B1 (ko) 2006-01-27
CN1178601A (zh) 1998-04-08

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Granted publication date: 20070516

Termination date: 20130130