Classifications

• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
  • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
  • H02N1/002—Electrostatic motors
  • H02N1/006—Electrostatic motors of the gap-closing type
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
  • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
  • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
  • B81C1/0015—Cantilevers
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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  • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
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  • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
  • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
  • G11B9/1409—Heads
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
  • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
  • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
  • G11B9/1418—Disposition or mounting of heads or record carriers
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
  • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
  • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
  • G11B9/1418—Disposition or mounting of heads or record carriers
  • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
  • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
  • G11B9/1445—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other switching at least one head in operating function; Controlling the relative spacing to keep the head operative, e.g. for allowing a tunnel current flow
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B2201/00—Specific applications of microelectromechanical systems
  • B81B2201/07—Data storage devices, static or dynamic memories
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B2201/00—Specific applications of microelectromechanical systems
  • B81B2201/12—STM or AFM microtips
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B2203/00—Basic microelectromechanical structures
  • B81B2203/03—Static structures
  • B81B2203/0361—Tips, pillars
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C2201/00—Manufacture or treatment of microstructural devices or systems
  • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
  • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
  • B81C2201/0102—Surface micromachining
  • B81C2201/0105—Sacrificial layer
  • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C2201/00—Manufacture or treatment of microstructural devices or systems
  • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
  • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
  • B81C2201/0128—Processes for removing material
  • B81C2201/013—Etching
  • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
  • G11B2005/0002—Special dispositions or recording techniques
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S977/00—Nanotechnology
  • Y10S977/84—Manufacture, treatment, or detection of nanostructure
  • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
  • Y10S977/86—Scanning probe structure
  • Y10S977/861—Scanning tunneling probe
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S977/00—Nanotechnology
  • Y10S977/84—Manufacture, treatment, or detection of nanostructure
  • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
  • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S977/00—Nanotechnology
  • Y10S977/84—Manufacture, treatment, or detection of nanostructure
  • Y10S977/888—Shaping or removal of materials, e.g. etching
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S977/00—Nanotechnology
  • Y10S977/84—Manufacture, treatment, or detection of nanostructure
  • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald

Definitions

• the present invention is directed broadly to microelectromechanical systems (MEMS) and more particularly to a microelectromechanical structure which is particularly useful for data storage applications.
• MEMS microelectromechanical systems
• STM scanning tunneling microscopy
• the present invention in its broadest aspect, is directed to a microelectromechanical device which is comprised of a cantilevered beam positioned above, and free to move relative to, a substrate.
• the beam carries, according to one embodiment of the invention, a plurality of conductors which are insulated from one another.
• a tip is positioned on the beam in electrical contact with one of the conductors.
• a beam so constructed provides advantages not found in the prior art. By carrying a plurality of conductors, the conductor which is in electrical contact with the tip can be used for read/write operations.
• the remainder of the conductors may have a voltage impressed thereon so that the cantilevered beam can be positioned relative to fixed structures which may also have voltages applied thereto.
• the present invention is also directed to a process of manufacturing such a microelectromechanical device.
• the process starts with a substrate which has been subjected to standard CMOS fabrication techniques so that it carries at least one metal layer forming the microelectromechanical device of interest, and at least one layer of oxide.
• the thus-fabricated device is subjected according to the process of the present invention to an anisotropic, or vertical, etching.
• the anisotropic etching etches all oxide not occluded by metal. That step provides very exact vertical sides to the various structures making up the device of interest.
• the anisotropic etching step is followed by a gas etching step for purposes of sacrificing the substrate.
• the gas etchant may be, for example, a fluoride gas such as CF 4 N0 2 .
• the width of various structures is controlled so that the cantilevered beam is released before the substrate under other structures is completely etched.
• the process of the present invention eliminates stiction and provides devices which are extremely well defined.
• a microelectromechanical device constructed according to the teachings of the present invention may be used, for example, in the construction of a memory device.
• Such a memory device is comprised of a layer of media suitable for storing information.
• a cantilevered beam is positioned proximate to the layer of media, with the beam carrying at least one conductor.
• Devices for positioning the beam in x and y directions perpendicular to each other and parallel to the layer of media and in a z direction perpendicular to the layer of media are provided.
• a plurality of tips are positioned on the beam and in electrical contact with the conductors.
• a control circuit generates control signals input to the positioning devices for positioning the tips according to x, y, and z coordinates.
• a read/write circuit which is in electrical communication with the conductor, provides signals to the tips to cause the tips to write those signals to the layer of media in a write mode and to read previously written signals sensed by the tips in a read mode. If the beam carries a single conductor, it is necessary to multiplex the signals provided to the tips so that only one tip is responsive at a time.
• Such multiplexing can be accomplished by controlling the z coordinate of each tip.
• multiple conductors may be carried by the cantilevered beam, and wherein each tip is in electrical contact with one of the conductors. Under those circumstances, multiplexing is not necessary because each tip is responsive to a separate conductor. Under those circumstances, positioning in the z direction may be required only to maintain the proper distance between each of the tips and the layer of media.
• a memory device constructed according to the teachings of the present invention, and using the novel microelectromechanical device of the present invention, should provide commercially viable storage capacities, i.e. 10 GB in a volume of 1 centimeter by 1 centimeter by .2 centimeters, access times on the order of one millisecond with data transfer rates in the read mode of 10 MB/s and data transfer rates in the write mode of 1 MB/s.
• Such a device when active, should draw approximately 50 mW of power and, in a standby mode, approximately 1 mW of power.
• One reason such parameters are achievable is because each cantilevered beam moves over only a short distance. Therefore, less power is required.
• Another benefit of smaller beam movements is that less time is required to reach any particular stored record which, in addition to the fact that there is no rotational latency, results in a dramatic decrease in overall latency of access.
• Such parameters represent a revolutionary leap forward in volumetric density and power requirements of data storage systems for portable applications.
• Fabrication using parallel lithography techniques offsets the additional cost of using three actuators, one for the x coordinate, one for the y coordinate, and one for the z coordinate, instead of simply one actuator.
• Using parallel lithographic fabrication techniques enables the economical manufacturing of large arrays which should ultimately result in dramatically lower data storage system costs as almost no manual mechanical assembly is required.
• FIG. 1 illustrates a microelectromechanical memory device constructed according to the teachings of the present invention
• FIG. 2 illustrates a portion of the data storage layer
• FIG. 3 illustrates two scanning tunneling microscopy (STM) devices constructed according to the teachings of the present invention
• FIGS. 4, 5, and 6 illustrate the process of the present invention which may be used to manufacture the cantilevered beams of the present invention
• FIG. 7 is a simplified side view of a cantilevered beam positioned proximate to a data storage layer
• FIG. 8 is cross-sectional view of a cantilevered beam carrying a plurality of conductors
• FIG. 9 is a top view of a cantilevered beam having a plurality of tips and having extensions for controlling the position of the beam in the z direction;
• FIG. 10 illustrates a single segment of a self- contained bellows spring/actuator MEMS device incorporating multiconductor beams.
• FIG. 1 illustrates a microelectromechanical memory device 10 constructed according to the teachings of the present invention.
• the microelectromechanical memory device 10 is constructed of an array of scanning tunneling microscopy (STM) devices 12. Each STM device 12 is connected to its own control electronics 14.
• the device 10 is also constructed of a layer of media 16 which is the physical structure which stores the data. It is the underside 18 of the layer of media 16 which is exposed to the array of STM devices 12.
• FIG. 2 illustrates the underside 18 of a portion of the layer of media 16.
• the layer of media 16 may be, for example, a thin carbon film.
• the carbon film may be deposited by sputtering an initial crystal conformation.
• Each area 20 illustrated in FIG. 2 corresponds to an area which may be written or read by an STM device 12. It is seen that the ratio of areas 20 to the overall surface area of underside 18 is relatively small . By providing STM devices 12 which write to relatively small areas, little movement is required thereby allowing for fast write and read operations. Additionally, because little movement is required, power requirements are also kept to a minimum. However, because the areas 20 are relatively small, the data which is stored in each area 20 must be extremely compact.
• a "pit" representing a logic level “one” is on the order of three to ten nanometers in diameter, with a spacing of three to ten nanometers between pits. It is that high density, coupled with the large number of areas 20, which should allow the storage capacity of the device 10 to reach 10 GB.
• FIG. 3 two STM devices 12 together with a portion of their respective control electronics 14 are illustrated.
• Each STM device 12 and its corresponding control electronics 14 is constructed and operates in an identical manner such that the description of the construction and operation of one STM device 12 and control electronics 14 is sufficient.
• the STM device 12 is constructed of a cantilevered beam 22, which in the embodiment shown in FIG. 3, is substantially L-shaped.
• the beam 22 is positioned above a substrate 24.
• the beam 22 is free to move in x and y directions which are perpendicular to each other, but parallel to the substrate 24 and layer of media 16.
• the beam 22 is also free to move in a z direction which is perpendicular to both the substrate 24 and the layer of media 16.
• the beam carries a pad 26 at its distal end which is referred to herein as a z-deflector.
• the beam 22 carries at least one metal conductor which is in electrical communication with a tip 28.
• the position of the cantilevered beam 22 with respect to x coordinates is controlled by a pair of wall structures 30 and 32 which, under the control of electronics 14, may form a parallel plate capacitor which can urge cantilevered beam 22 either toward wall 32 or toward wall 30.
• a pair of wall structures 34 and 36 may, under the control of electronics 14, form a parallel plate capacitor for controlling the position of the beam 22, and hence the tip 28, with respect to y coordinates.
• control in the z direction can be achieved by applying a voltage to z deflector 26 with respect to the media 18 (best shown in FIG. 3) to urge the beam toward the media 18.
• control electronics 14 can generate voltages to be applied to walls 30, 32, 34, and 36 as well as z deflector 26 to precisely position tip 28 with respect to x, y, and z coordinates, respectively.
• the tip 28 is in electrical communication with control electronics 14 by virtue of the conductor running through or along beam 22.
• the beam 22 can be precisely positioned with respect to x, y, and z coordinates so that electrical signals may be supplied to the tip 28 for the signals to be written to the layer of media 16.
• the tip 28 is swept past a pre-determined portion of the layer of media 16 and the signals, in the form of ones and zeros, can be read by the tip 28.
• control electronics 14 used for controlling the position of beam 22 as well as the mode, write mode or read mode, of the STM device 12, are well known in the art and need not be described herein.
• the reader requiring more detail with respect to control electronics 14 is directed to: G. K. Fedder, Simulation of Microelectromechanical Systems, Ph.D. Thesis, Dept. of Electrical Engineering and Computer Science, University of California at Berkeley, Sept. 1994 and G. C. Fedder and R. T. Howe, Jntegrrated Test ed for Mul ti -Mode Digi tal Control of Suspended Microstructures , Technical Digest, IEEE Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, pp. 63-68, June 1992, which are hereby incorporated by reference.
• FIGS. 4, 5, and 6, a process is illustrated which may be used to manufacture the cantilevered beams 22 of the present invention as well as the entire STM device 12.
• I start with a substrate 38 upon which an erodible layer, such as an insulating layer, has been deposited.
• an insulating layer is oxide layer 40.
• a non-erodible mask layer such as a conductive layer, for example, a metal layer, is laid down, which, after a masking and removal step, may result in metal areas 42 and 44.
• the metal area 42 may ultimately form, for example, a portion of wall 36 while the metal area 44 becomes a conductor within beam 22.
• Another insulating layer such as oxide layer 46 is laid down followed by another conductive layer such as a metal layer which is etched or otherwise removed to leave metal areas 48 and 50.
• Another insulating layer such as oxide layer 52 may be deposited.
• the substrate 38 carrying the oxide and metal layers is subjected to an anisotropic process which provides a vertical etch. As seen in FIG. 5, all oxide not occluded by metal is removed.
• FIG. 7 is a simplified side view of a cantilevered beam 22 carrying tip 28 positioned proximate to the layer of media 16.
• An etch pit 54 also seen in FIG. 6, illustrates the beam's 22 freedom in the z direction.
• technology is available for constructing tips 28. For example, it is known to sputter a metal through an oxide mask having a cavity formed therein. As the sputtered metal builds up from the bottom of the cavity, it also builds inward from the sides around the periphery of the cavity's opening causing the metal sputtered into the cavity to take the shape of a cone.
• FIG. 8 illustrates what will ultimately become the cantilevered beam 22, as seen in FIG. 5, after an insulating layer, such as oxide layer 56, has been deposited.
• the purpose for providing the oxide layer 56 is so that when multiple tips are used, each of the tips can be electronically isolated from the top conductor 50.
• FIG. 9 Another embodiment of the present invention is illustrated in FIG. 9.
• a beam 58 has four end portions 60, 62, 64, and 66, each carrying a tip 28. If the beam 58 has four separate conductors, the tips on the end of each of the arms 60, 62, 64, and 66 may each be responsive to one of the conductors.
• one of the conductors can be operative to cause one of the tips to be in the read/write mode whereas no signals need be carried by the other conductors.
• beam 58 has a single conductor
• individual z deflectors 68 can be fabricated proximate to the end of each of the arms 60, 62, 64, and 66.
• the z deflector 68 for, for example, arms 62, 64, and 66 may be used to bend those arms away from the layer of media 16 thereby leaving tip 28 on the end of arm 60 as the only tip physically close enough to carry out the read/write operation.
• FIG. 9 also illustrates z deflector pads 70.
• z deflector pads 70 may be used in place of the large z deflector pad 26 illustrated in FIG. 3 in the event that the dimensions of the pad are such that walls 30, 32, 34, and 36 will be substantially undercut before z pad 26 is released from the substrate.
• FIG. 10 illustrates a single segment 80 of a self-contained bellows spring/actuator MEMS device incorporating multiconductor beams.
• the spring lengths are not shown to scale in FIG. 10, as indicated by the broken lines.
• Segment 80 consists of two layers of conductors 81, 82 and 83. A potential difference between conductors 81 and 82 causes the height of the spring (measured along the direction indicated as X) to decrease.
• Layers 81 and 84 are separated by an insulator, as are layers 82 and 83.
• the black boxes indicate the only points at which two conductive layers connect electrically. Typically, many of these units would be stacked to achieve large (tens of microns) deflections.
• a memory device constructed according to the teachings of the present invention is substantially reduced in size and weight, and is approximately the thickness of one or two silicon wafers.
• complex three conductor beams can be fabricated.
• the process steps of the present invention can "piggyback" on the best available CMOS lithography techniques .
• CMOS lithography techniques allows for inexpensive high volume fabrication.
• the STM technology of the present invention when used in conjunction with an amorphous magnetic tip, can write submicron magnetic bit patterns on double- layered magnetizable media. See Watanuki et al. , "Small Magnetic Patterns Written With a Scanning Tunneling

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• Crystallography & Structural Chemistry (AREA)
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• 1995
  • 1995-07-25 US US08/507,676 patent/US5717631A/en not_active Expired - Lifetime
• 1996
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