WO1994000870A2 - Chemical vapor deposition from single organometallic precursors - Google Patents

Chemical vapor deposition from single organometallic precursors Download PDF

Info

Publication number
WO1994000870A2
WO1994000870A2 PCT/US1993/005796 US9305796W WO9400870A2 WO 1994000870 A2 WO1994000870 A2 WO 1994000870A2 US 9305796 W US9305796 W US 9305796W WO 9400870 A2 WO9400870 A2 WO 9400870A2
Authority
WO
WIPO (PCT)
Prior art keywords
passivating
substrate
buffer film
precursor
volatilized
Prior art date
Application number
PCT/US1993/005796
Other languages
English (en)
French (fr)
Other versions
WO1994000870A3 (en
Inventor
Andrew R Barron
Michael B Power
Andrew N Macinnes
Aloysius F Hepp
Phillip P Jenkins
Original Assignee
Harvard College
Nasa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College, Nasa filed Critical Harvard College
Priority to AU46386/93A priority Critical patent/AU4638693A/en
Priority to CA002138951A priority patent/CA2138951A1/en
Priority to EP93916588A priority patent/EP0647353A1/en
Priority to JP50245194A priority patent/JP3249822B2/ja
Publication of WO1994000870A2 publication Critical patent/WO1994000870A2/en
Publication of WO1994000870A3 publication Critical patent/WO1994000870A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
PCT/US1993/005796 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors WO1994000870A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU46386/93A AU4638693A (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors
CA002138951A CA2138951A1 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors
EP93916588A EP0647353A1 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors
JP50245194A JP3249822B2 (ja) 1992-06-23 1993-06-18 単一の有機金属前駆体からの化学的蒸着

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/903,256 1992-06-23
US07/903,256 US5300320A (en) 1992-06-23 1992-06-23 Chemical vapor deposition from single organometallic precursors

Publications (2)

Publication Number Publication Date
WO1994000870A2 true WO1994000870A2 (en) 1994-01-06
WO1994000870A3 WO1994000870A3 (en) 1994-03-03

Family

ID=25417193

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1993/005796 WO1994000870A2 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors

Country Status (7)

Country Link
US (1) US5300320A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0647353A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3249822B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU4638693A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA2138951A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW244397B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1994000870A2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996021251A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Minority carrier device
WO1996020943A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Liquid precursor for cubic-phase passivating/buffer film

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429989A (en) * 1994-02-03 1995-07-04 Motorola, Inc. Process for fabricating a metallization structure in a semiconductor device
US5760462A (en) * 1995-01-06 1998-06-02 President And Fellows Of Harvard College Metal, passivating layer, semiconductor, field-effect transistor
US6124427A (en) * 1997-03-31 2000-09-26 North Dakota State University Organometallic single source precursors for inorganic films coatings and powders
US5906898A (en) * 1997-09-18 1999-05-25 M-C Power Corporation Finned internal manifold oxidant cooled fuel cell stack system
US6372356B1 (en) 1998-06-04 2002-04-16 Xerox Corporation Compliant substrates for growing lattice mismatched films
DE10200929A1 (de) * 2002-01-12 2003-07-31 Basf Coatings Ag Polysiloxan-Sole, Verfahren zu ihrer Herstellung und ihre Verwendung
ATE331823T1 (de) * 2003-03-03 2006-07-15 Dechema Verfahren zur beschichtung eines substrates
KR100789064B1 (ko) * 2006-07-14 2007-12-26 중앙대학교 산학협력단 금속유기물증착법에 의한 ＣｕＩｎＳ2 박막의 제조방법,그로 제조된 ＣｕＩｎＳ2 박막 및 그를 이용한 Ｉｎ2Ｓ3박막의 제조방법
TWI485276B (zh) * 2013-12-05 2015-05-21 Nat Inst Chung Shan Science & Technology 提升硒化物薄膜成長品質之蒸鍍裝置
EP3173507A1 (de) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
CN111095513B (zh) 2017-08-18 2023-10-31 应用材料公司 高压高温退火腔室
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP7274461B2 (ja) 2017-09-12 2023-05-16 アプライド マテリアルズ インコーポレイテッド 保護バリア層を使用して半導体構造を製造する装置および方法
JP7112490B2 (ja) 2017-11-11 2022-08-03 マイクロマテリアルズ エルエルシー 高圧処理チャンバのためのガス供給システム
CN111432920A (zh) 2017-11-17 2020-07-17 应用材料公司 用于高压处理系统的冷凝器系统
KR102702244B1 (ko) 2018-03-09 2024-09-03 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
SG11202103763QA (en) * 2018-11-16 2021-05-28 Applied Materials Inc Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU570239A1 (ru) * 1976-02-12 1979-02-10 Институт химии АН СССР "Способ получени кристаллических соединений а1у ву14
JPS59123226A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996021251A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Minority carrier device
WO1996020943A1 (en) * 1995-01-06 1996-07-11 President And Fellows Of Harvard College Liquid precursor for cubic-phase passivating/buffer film

Also Published As

Publication number Publication date
CA2138951A1 (en) 1994-01-06
TW244397B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-04-01
AU4638693A (en) 1994-01-24
WO1994000870A3 (en) 1994-03-03
JPH08504057A (ja) 1996-04-30
JP3249822B2 (ja) 2002-01-21
EP0647353A1 (en) 1995-04-12
US5300320A (en) 1994-04-05

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