JP3249822B2 - 単一の有機金属前駆体からの化学的蒸着 - Google Patents

単一の有機金属前駆体からの化学的蒸着

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Publication number
JP3249822B2
JP3249822B2 JP50245194A JP50245194A JP3249822B2 JP 3249822 B2 JP3249822 B2 JP 3249822B2 JP 50245194 A JP50245194 A JP 50245194A JP 50245194 A JP50245194 A JP 50245194A JP 3249822 B2 JP3249822 B2 JP 3249822B2
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JP
Japan
Prior art keywords
film
precursor
support
active
group
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP50245194A
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English (en)
Japanese (ja)
Other versions
JPH08504057A (ja
Inventor
バロン，アンドリユー・アール
パワー，マイケル・ビー
マツクインズ，アンドリユー・エヌ
ヘツプ，アロイシウス・エフ
ジエンキンズ，フイリツプ・ピー
Original Assignee
プレジデント・アンド・フエローズ・オブ・ハーバード・カレツジ
ナシヨナル・エアロノーテイクス・アンド・スペイス・アドミニストレイシヨン
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Application filed by プレジデント・アンド・フエローズ・オブ・ハーバード・カレツジ, ナシヨナル・エアロノーテイクス・アンド・スペイス・アドミニストレイシヨン filed Critical プレジデント・アンド・フエローズ・オブ・ハーバード・カレツジ
Publication of JPH08504057A publication Critical patent/JPH08504057A/ja
Application granted granted Critical
Publication of JP3249822B2 publication Critical patent/JP3249822B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP50245194A 1992-06-23 1993-06-18 単一の有機金属前駆体からの化学的蒸着 Expired - Fee Related JP3249822B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US903,256 1992-06-23
US07/903,256 US5300320A (en) 1992-06-23 1992-06-23 Chemical vapor deposition from single organometallic precursors
US07/903,256 1992-06-23
PCT/US1993/005796 WO1994000870A2 (en) 1992-06-23 1993-06-18 Chemical vapor deposition from single organometallic precursors

Publications (2)

Publication Number Publication Date
JPH08504057A JPH08504057A (ja) 1996-04-30
JP3249822B2 true JP3249822B2 (ja) 2002-01-21

Family

ID=25417193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50245194A Expired - Fee Related JP3249822B2 (ja) 1992-06-23 1993-06-18 単一の有機金属前駆体からの化学的蒸着

Country Status (7)

Country Link
US (1) US5300320A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0647353A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP3249822B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU4638693A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA2138951A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW244397B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1994000870A2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US5429989A (en) * 1994-02-03 1995-07-04 Motorola, Inc. Process for fabricating a metallization structure in a semiconductor device
US5738721A (en) * 1995-01-06 1998-04-14 President And Fellows Of Harvard College Liquid precursor and method for forming a cubic-phase passivating/buffer film
US5760462A (en) * 1995-01-06 1998-06-02 President And Fellows Of Harvard College Metal, passivating layer, semiconductor, field-effect transistor
AU4695096A (en) * 1995-01-06 1996-07-24 National Aeronautics And Space Administration - Nasa Minority carrier device
US6124427A (en) * 1997-03-31 2000-09-26 North Dakota State University Organometallic single source precursors for inorganic films coatings and powders
US5906898A (en) * 1997-09-18 1999-05-25 M-C Power Corporation Finned internal manifold oxidant cooled fuel cell stack system
US6372356B1 (en) 1998-06-04 2002-04-16 Xerox Corporation Compliant substrates for growing lattice mismatched films
DE10200929A1 (de) * 2002-01-12 2003-07-31 Basf Coatings Ag Polysiloxan-Sole, Verfahren zu ihrer Herstellung und ihre Verwendung
EP1599613B1 (de) * 2003-03-03 2006-06-28 DECHEMA Gesellschaft für Chemische Technologie und Biotechnologie e.V. Verfahren zur beschichtung eines substrates
KR100789064B1 (ko) * 2006-07-14 2007-12-26 중앙대학교 산학협력단 금속유기물증착법에 의한 ＣｕＩｎＳ2 박막의 제조방법,그로 제조된 ＣｕＩｎＳ2 박막 및 그를 이용한 Ｉｎ2Ｓ3박막의 제조방법
TWI485276B (zh) * 2013-12-05 2015-05-21 Nat Inst Chung Shan Science & Technology 提升硒化物薄膜成長品質之蒸鍍裝置
EP3173507A1 (de) * 2015-11-25 2017-05-31 Umicore AG & Co. KG Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
KR102659317B1 (ko) 2017-09-12 2024-04-18 어플라이드 머티어리얼스, 인코포레이티드 보호 배리어 층을 사용하여 반도체 구조들을 제조하기 위한 장치 및 방법들
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
WO2019173006A1 (en) 2018-03-09 2019-09-12 Applied Materials, Inc. High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
CN112996950B (zh) * 2018-11-16 2024-04-05 应用材料公司 使用增强扩散工艺的膜沉积
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU570239A1 (ru) * 1976-02-12 1979-02-10 Институт химии АН СССР "Способ получени кристаллических соединений а1у ву14
JPS59123226A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ＣＨＥＭＩＳＴＲＹ ＯＦ ＭＡＴＥＲＩＡＬＳ ｖｏｌ．４，ｎｏ．１，Ｆｅｂｒｕａｒｙ １９９２，ＷＡＳＨＩＮＧＴＯＮ ＵＳ，ｐａｇｅｓ１１−１４，Ａ．Ｎ．ＭＡＣＩＮＮＥＳ ＥＴ ＡＬ，"ＣＨＥＭＩＣＡＬ ＶＡＰＯＲ ＤＥＰＯＳＩＴＩＯＮ ＯＦ ＣＵＢＩＣ ＧＡＬＬＩＵＭ ＳＵＬＦＩＤＥ ＴＨＩＮ ＦＩＬＭＳ：Ａ ＮＥＷ ＭＥＴＡＳＴＡＢＬＥ ＰＨＡＳＥ"

Also Published As

Publication number Publication date
WO1994000870A3 (en) 1994-03-03
WO1994000870A2 (en) 1994-01-06
EP0647353A1 (en) 1995-04-12
JPH08504057A (ja) 1996-04-30
AU4638693A (en) 1994-01-24
TW244397B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-04-01
CA2138951A1 (en) 1994-01-06
US5300320A (en) 1994-04-05

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