WO1995027292A1 - Procede de depot de dielectrique et/ou de conducteur sur un substrat - Google Patents

Procede de depot de dielectrique et/ou de conducteur sur un substrat Download PDF

Info

Publication number
WO1995027292A1
WO1995027292A1 PCT/FR1995/000426 FR9500426W WO9527292A1 WO 1995027292 A1 WO1995027292 A1 WO 1995027292A1 FR 9500426 W FR9500426 W FR 9500426W WO 9527292 A1 WO9527292 A1 WO 9527292A1
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric
conductive material
substrate
nitrogen plasma
depositing
Prior art date
Application number
PCT/FR1995/000426
Other languages
English (en)
Inventor
Ronan Stephan
Franck Callebert
Original Assignee
Compagnie Europeenne De Composants Electroniques Lcc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Europeenne De Composants Electroniques Lcc filed Critical Compagnie Europeenne De Composants Electroniques Lcc
Publication of WO1995027292A1 publication Critical patent/WO1995027292A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé de dépôt de couche de diélectrique et/ou de conducteur sur un substrat, caractérisé en ce qu'il comprend une étape de confinement dans un réacteur (6) d'un plasma différé d'azote et d'un gaz organo-silicé ou organo-germané au-dessus de la surface (1) dudit substrat de façon que ladite couche de diélectrique se dépose par polymérisation d'éléments issus de la dissociation par ledit plasma différé d'azote dudit gaz organo-silicé ou organo-germané et/ou une étape de confinement d'un plasma différé d'azote et d'un gaz précurseur d'éléments conducteurs de façon que ladite couche de conducteur soit réalisée par dépôt desdits éléments issus de la dissociation par ledit plasma différé d'azote dudit gaz précurseur. Les étapes de confinement permettent que le gradient de vitesse des gaz qui interviennent dans le processus de dépôt de diélectrique et/ou de conducteur s'établisse entre la partie centrale et les bords de la surface (1) du substrat de façon que le dépôt de diélectrique et/ou de conducteur présente une planéité sensiblement constante sur la totalité de la surface (1) du substrat.
PCT/FR1995/000426 1994-04-05 1995-04-04 Procede de depot de dielectrique et/ou de conducteur sur un substrat WO1995027292A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR94/03961 1994-04-05
FR9403961A FR2718155B1 (fr) 1994-04-05 1994-04-05 Procédé de dépôt de diélectrique et/ou de métal sur un substrat.

Publications (1)

Publication Number Publication Date
WO1995027292A1 true WO1995027292A1 (fr) 1995-10-12

Family

ID=9461733

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR1995/000426 WO1995027292A1 (fr) 1994-04-05 1995-04-04 Procede de depot de dielectrique et/ou de conducteur sur un substrat

Country Status (2)

Country Link
FR (1) FR2718155B1 (fr)
WO (1) WO1995027292A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019438A2 (fr) * 2004-07-14 2006-02-23 Tokyo Electron Limited Depot chimique en phase vapeur basse temperature active par plasma de films contenant du silicium et de l'azote
EP1788117A1 (fr) * 2005-11-18 2007-05-23 United Technologies Corporation Revêtements multicouches de nitrure de bore/nitrure de silicium

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6302965B1 (en) * 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418676A (en) * 1977-07-13 1979-02-10 Hitachi Ltd Film formation method
US4599678A (en) * 1985-03-19 1986-07-08 Wertheimer Michael R Plasma-deposited capacitor dielectrics
WO1991017285A1 (fr) * 1990-05-09 1991-11-14 Schmitt Technology Associates Depot de materiaux en couche mince par jets de gaz associes a un plasma a ondes ultracourtes
GB2245600A (en) * 1990-07-06 1992-01-08 Plasmametal Metallising a surface using a plasma with a post-discharge zone

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2701492B1 (fr) * 1993-02-10 1996-05-10 Univ Lille Sciences Tech Procédé pour déposer une couche mince sur un substrat par plasma froid différé d'azote.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418676A (en) * 1977-07-13 1979-02-10 Hitachi Ltd Film formation method
US4599678A (en) * 1985-03-19 1986-07-08 Wertheimer Michael R Plasma-deposited capacitor dielectrics
WO1991017285A1 (fr) * 1990-05-09 1991-11-14 Schmitt Technology Associates Depot de materiaux en couche mince par jets de gaz associes a un plasma a ondes ultracourtes
GB2245600A (en) * 1990-07-06 1992-01-08 Plasmametal Metallising a surface using a plasma with a post-discharge zone

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KULISCH W: "Remote plasma-enhanced chemical vapour deposition with metal organic source gases: principles and applications", THIRD INTERNATIONAL CONFERENCE ON PLASMA SURFACE ENGINEERING, GARMISCH-PARTENKIRCHEN, GERMANY, 26-29 OCT. 1992, ISSN 0257-8972, SURFACE AND COATINGS TECHNOLOGY, 1 OCT. 1993, SWITZERLAND, PAGE(S) 193 - 201 *
PATENT ABSTRACTS OF JAPAN vol. 003, no. 040 (E - 102) 6 April 1979 (1979-04-06) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019438A2 (fr) * 2004-07-14 2006-02-23 Tokyo Electron Limited Depot chimique en phase vapeur basse temperature active par plasma de films contenant du silicium et de l'azote
WO2006019438A3 (fr) * 2004-07-14 2006-07-13 Tokyo Electron Ltd Depot chimique en phase vapeur basse temperature active par plasma de films contenant du silicium et de l'azote
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
EP1788117A1 (fr) * 2005-11-18 2007-05-23 United Technologies Corporation Revêtements multicouches de nitrure de bore/nitrure de silicium
US7510742B2 (en) 2005-11-18 2009-03-31 United Technologies Corporation Multilayered boron nitride/silicon nitride fiber coatings

Also Published As

Publication number Publication date
FR2718155B1 (fr) 1996-04-26
FR2718155A1 (fr) 1995-10-06

Similar Documents

Publication Publication Date Title
AU1899588A (en) Method of plasma enhanced silicon oxide deposition
EP0175980A3 (fr) Procédé de dépôt d'un revêtement de carbone sur un substrat à l'aide d'une décharge luminescente et revêtements obtenus par ce procédé
WO2000020900A3 (fr) Depot de carbure de silicium utilise comme revetement anti-reflechissant a faible constante dielectrique
EP0166383A3 (fr) Dépôt continu par un procédé de gaz activés
TW238341B (en) Process for improved quality of CVD copper films
EP0874391A3 (fr) Procédé de dépÔt d'une couche de Si02 dopée par un halogène
TW362118B (en) Method for depositing amorphous SiNC coatings
EP0238434A3 (fr) Procédé pour déposer une couche d'un matériau abrasif sur un substrat
TWI264039B (en) Fed cathode structure using electrophoretic deposition and method of fabrication
AU3800395A (en) Process for separating metal coatings
EP0630989B1 (fr) Procédé pour le plasma-dépôt chimique en phase vapeur de souches ayant une interface améliorée
CA2175045A1 (fr) Procede d'infiltration chimique en phase vapeur d'un materiau au sein d'un substrat poreux a temperature de surface controlee
EP0647353A1 (fr) Deposition en phase gazeuse par procede chimique a partir de precurseurs organometalliques simples
ES2074969A6 (es) Metodo para depositar diamante sobre un sustrato.
EP1071123A8 (fr) Procede de formation de film
ES8505838A1 (es) Un metodo perfeccionado de depositar una pelicula electricamente conductora, delgada y transmisora de la luz
EP0361206B1 (fr) Article revêtu d'un film céramique
AT400041B (de) Hartmetall-substrat mit diamantschicht hoher haftfestigkeit
WO1995027292A1 (fr) Procede de depot de dielectrique et/ou de conducteur sur un substrat
CA2206217A1 (fr) Procede de depot en phase vapeur a l'aide de nickel-carbonyle
EP0149408A3 (en) Method and apparatus for the deposition of a thin layer on a substrate by a reactive plasma
CA2032172A1 (fr) Processus d'application d'un revetement ceramique au moyen d'un jet de plasma transportant un element non metallique en forme libre
PL350799A1 (en) Method of producing thin, poorly soluble coatings
WO2005019497B1 (fr) Procedes de reduction d'endommagements induits par plasma destines a des elements dielectriques perfectionnes obtenus par cvd par plasma
WO1995027293A1 (fr) Procede de depot de dielectrique et/ou de conducteur sur un substrat

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CA FI JP KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA