WO1993021744A1 - Thin-film el element - Google Patents
Thin-film el element Download PDFInfo
- Publication number
- WO1993021744A1 WO1993021744A1 PCT/JP1992/000958 JP9200958W WO9321744A1 WO 1993021744 A1 WO1993021744 A1 WO 1993021744A1 JP 9200958 W JP9200958 W JP 9200958W WO 9321744 A1 WO9321744 A1 WO 9321744A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin
- film
- thin film
- zns
- light
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Definitions
- the present invention relates to a thin-film EL device in which a light-emitting layer is composed of a thin film. Background technology.
- S. Tanakaeta 1 Digest 1 988 SID Int. Symp, P293, 198 88
- SrS Ce
- K blue-green emission
- a thin-film EL device employing SrS: Eu as shown is introduced, and it is also reported that the emission color changes with voltage.
- the above-mentioned problem is caused by the so-called “dead layer” at the interface between the light emitting layers.
- the high-resistance layer with poor crystallinity is about 100 ⁇ to 2000 ⁇ ! It is interpreted to occur because it is formed by the.
- This dead layer is generally generated in a phosphor layer formed by EB (Electron Beam) vapor deposition or sputtering, which is a conventional light emitting layer forming technique (for example, “H.S. asakuraetal: J. Ap pl, P hys r 5 2 (1 1), reference 6 9 0 1, 1 9 8 1 j).
- each employee When a voltage is applied to such a conventional thin-film EL device having a stacked light-emitting layer, each employee functions as an independent thin-film EL device. And, since these independent EL elements have independent “brightness-one-voltage” characteristics, as a result, the luminescent color was changed by the voltage. "
- e is a glass substrate
- d is a transparent electrode patterned on the glass substrate e
- f and g are the first and second insulating layers
- h is this rain-absorbing i
- g is the back electrode.
- k is a power filter
- the other members are the same members as those having the same reference numerals as those shown in FIG.
- the light emitting layer ⁇ ⁇ light emitting layers of three primary colors of R, G and ⁇ are laminated.
- the former light emitting layer buttering type in the conventional thin film EL device capable of full color display described above complicates the manufacturing process and causes problems such as the light emitting layer being damaged during patterning. was there.
- the fabrication process is thimble, but the L-V characteristics are different for each material, and the electric field applied to the central layer is substantially lower than that of both sides.
- problems such as difficulty in extracting light from each layer with good balance.
- a method of decomposing white light having a wide spectrum such as S r S: C e.
- the problem is that sufficient luminance cannot be obtained with Ce.Eu, and the chemical stability of the '' SrS base material is poor. Disclosure of the invention
- the present invention has been made in view of the above, and is intended to provide a thin-film EL device in which two or more types of thin films having different emission colors are stacked to obtain a new different emission color by superimposing the emission colors.
- the purpose of the present invention is to provide a chemically stable thin film element that can prevent a change in luminescent color due to the change and obtain high-luminance light.
- Another object of the present invention is to provide a chemically stable thin-film EL device in which thin-film EL devices in which a thin film that emits light and a thin film that does not emit light are stacked can obtain high-luminance light at a low voltage. I have.
- the thin-film EL device is a thin-film EL device including a light-emitting layer composed of two or more thin films and one or more thin-film insulators. One diode is connected in series in the opposite direction, and one capacitor is connected to them in parallel, and one capacitor is connected in series. Then, the interface between the thin films forming the light emitting layer is formed by a epitaxial growth. Further, when the light emitting layer of the thin film EL element forms a compound thin film, such as the MSD (Mu1ti_S0urce Deposition) method, the CVD (Chemica 1 Vapor Deposition) method, etc. It can be realized by a method of forming a desired compound thin film by separately supplying a constituent element or a compound containing the constituent element as a raw material to a substrate and chemically bonding the compound on the substrate. .
- ZnS Mn, in which Mn was introduced as a luminescent center impurity in the ZnS base material, and BaxSr (1-x) S (0 ⁇ x ⁇ 1) base material BaXSr (1-X) S: Ce introduced with Ce as a luminescence center impurity.
- the thin film constituting the light emitting layer made of the above material has a three-layer structure of ⁇ ZnS: Tb, ⁇ ⁇ ⁇ a ⁇ S ⁇ (I-x) S: Ce / ZnS: Tb, Mn the c going on to, as a thin film constituting the light emitting layer, Z n SB ax S r - in (1 x) S (Q ⁇ x ⁇ l) matrix, were introduced C e and E u as a luminescent center impurity B ax S r (1 — x) S: Ce and Eu are used.
- those of the thin films constituting the emission spectrum made of the above-mentioned materials have a three-layer structure of ZnS / BaXSr (1-x) S: Ce, EuZZnS.
- the crystal orientation of the ZnS thin film is [1 1 1] and ⁇ The crystal is oriented to [001] of Z or Uruthe type, and the crystal orientation of the BaXSr (1-X) S thin film is oriented to [111] and / or [110].
- C e, E ⁇ 1 / / ⁇ 113 ⁇ is 2113 / / ⁇ 2 0 2 5: 06, T b , Eu / ZnS.
- a power filter is installed on one of the lower and upper sides of the laminated light emitting layer, and the electrode on the substrate and the electrode on the opposite side of the substrate are patterned so as to be orthogonal to each other, and they intersect A color filter is installed at either the bottom or the top of the part.
- the electric equivalent surface of the thin-film device having a single-layer emission is the same as that of the thin-film EL device.
- the “voltage” characteristic is the same as the “brightness-voltage” characteristic of a thin-film EL device having a single-layer luminescent dust. Therefore, even in a thin film EL element in which two or more thin films having different emission colors are stacked, the emission color does not change due to the voltage.
- FIG. 1 is a cross-sectional view showing a first embodiment of a thin film EL device according to the present invention
- FIG. 2 is a conceptual diagram of an apparatus used for the MSD method
- FIG. 3 is an electrical equivalent of the thin film EL device according to the first embodiment
- FIG. 4 is a luminance-voltage characteristic diagram of the thin-film EL element according to the first embodiment.
- FIG. 5 is a graph showing the relationship between the amount of moving electric charge and the voltage of the thin film EL device according to the second embodiment of the present invention and the conventional example
- FIG. 6 is a graph showing the luminance versus voltage characteristics of the second embodiment and the conventional example.
- FIG. 7 is a sectional view showing a third embodiment of the thin film EL device according to the present invention
- FIG. 8 is a luminance-voltage characteristic diagram of the third embodiment
- FIG. 9 is light emission of the thin film EL device obtained in the third embodiment. It is a spectrum diagram.
- FIG. 10 shows a luminance-voltage characteristic li of the thin-film EL device according to the fourth embodiment of the present invention.
- L1 is the luminance-voltage characteristic diagram of the conventional stacked thin-film EL element
- Figure 12 is the electrical equivalent surface diagram of the conventional stacked thin-film EL element
- Figure 13 is the first conventional thin-film EL element.
- FIG. 14 is a cross-sectional view showing a second conventional EL element. Best mode for implementing pitfalls
- the light emitting layer is Z n S; Mn / B a 0. i S r 0 .9 S: C e / Z n S: in Zui the thin film EL element has a three-layer structure of Mn is described .
- FIG. 1 shows an example of this structure.
- 1 is a glass substrate
- 2 is a first electrode made of a transparent electrode
- 3 is a first shield made of Si ON
- 4 is ZnS: Mn.
- first light-emitting layer made of, 5 B a 0 j S r o 9 S:..
- the second light-emitting layer made of C e, 6 is Z n S: third light exhibition Ru M n Tona, 7 Is a second insulation extension made of S i ON, 8 is a second electrode made of A 1, and these are secondarily hired as shown in the figure.
- FIG. 2 conceptually shows an MSD apparatus for producing the above-mentioned laminated structure, in which the glass substrate 1 is held by a substrate holder 10 above the vacuum chamber 9 at a high speed.
- the components of the light-emitting layer are individually placed in the vapor deposition source 11 and arranged opposite each other.
- ITO Indium Tin 0 xide
- a first electrode 2 is formed as a first electrode 2 on a glass substrate 1 to a thickness of 0.1 // m by sputtering, and a first insulating layer 3 is formed thereon. 0.15 tm film of SiON is formed by sputtering.
- the glass substrate S1 thus pretreated is held in the substrate holder 10 in the vacuum chamber 9 to form a light emitting layer by the MSD method. That is, the first light-emitting layer 4 is formed by separately adding Zn, S :, and Mn to the evaporation source 11 of the vacuum chamber 9! 3 ⁇ 4 and independently controlling the temperature by ⁇ -cooling. Of the first layer 3 of Zn, S, Mn on top of — ⁇ ⁇ ⁇ is obtained by supplying and chemically bonding.
- the second light-emitting layer 5 was placed in the same chamber 9, and Ba, Sr, S, and Ce were separately placed in the evaporation source 11. They can be obtained by independently controlling the temperature, supplying Ba, Sr, S, and Ce vapors on the first light emitting layer 4 and chemically bonding them.
- the Ba concentration x and the Sr concentration (1 x) in BaxSr (1—x) S: Ce are changed. It can be freely changed to 0-1.
- the third light-emitting layer 6 can be obtained by forming a film on the second light-emitting layer 5 in exactly the same manner as the first light-emitting eyebrows.
- Sio is formed as a second insulating layer 7 to a thickness of 0.15 / m by sputtering, and finally the second electrode 8 is formed. Is formed by electron beam evaporation.
- the second and third light-emitting layers 5 and 6 formed as described above each form an epitaxy when formed on the previously formed light-emitting layer.
- This configuration has the same equivalent surface area as a thin-film EL element having a single-layer emission extension.
- epi growth in this case refers to the growth of a polycrystalline thin film on a polycrystalline thin film in which the crystal grains constituting the upper polycrystalline thin film are lattice-matched with the crystal grains constituting the underlying polycrystalline thin film. ⁇ means to do.
- FIG. 4 shows the “luminance-voltage” characteristics of the thin film EL device manufactured in the above embodiment, and the brightness of white light emitted from the thin film EL device monotonically increases with an increase in voltage. This is almost the same as a thin-film EL device having a single light-emitting layer with the same electrical equivalent plane. Therefore, the emission color of this thin film EL device is a thin film with a single light emitting layer Does not change regardless of voltage change, similar to EL elements
- the first and third light-emitting layers 4, 4 are introduced into the ZIIS base material by introducing Tb and Mn as light-emitting central impurities, thereby obtaining Zn S: T ? Mn, and the second layer 5 can be composed of BaxSr (1-) S: Ce (0 ⁇ x ⁇ 1).
- the B a XS r (1-) S: C e layer which is the above-described intermediate layer in the first embodiment, is compared with the ZnS: Mn and ZnS: Tb, Mn layers on both sides. Chemically unstable.
- the first and third light-emitting layers each composed of -ZnS: Mn or ZnS: Tb, Mn. In exhibitions 4 and 6, high brightness light emission from green to red can be obtained.
- the second luminous element 5 composed of chemically unstable SrS: Ce is replaced with the first composed of chemically stable ZnS: Mn or ZnS: Tb, Mn.
- the first and third light emitting layers 4 and 6 also serve as a passivation of the second light emitting layer 5 because of the structure sandwiched between the third light emitting layers 4 and 6. Can be made chemically stable.
- the film is formed according to the film forming method of the light emission extension shown in the first embodiment, and the electric equivalent plane of each element of the three layers is, as shown in FIG. 3, two Zener diodes 1 2 : 13 is connected in series in reverse, and capacitor 14 is connected to them in parallel, and if one capacitor is connected in series, it can be written as: BaSr (1-x) S: Ce with thin film ZnS and BaxSr (1-x) S (0 ⁇ x ⁇ 1) with Ce and Eu introduced as emission center impurities , Eu, and a three-layer structure of ZnSZBaxSr (ix-> S: Ce, Eu / ZnS) may be formed from these.
- ZnS / Ba0.1Sr0.9S Ce, Eu /
- a thin-film EL device using ZnS and, as shown in Fig. 12, two Zener diodes a and b connected in series in opposite directions, and one capacitor c connected to them in parallel Are connected in series, and one other capacitor d is connected to them in series, and has a configuration electrically equivalent to a circuit in which the other capacitor d is connected in series.
- a prototype of a thin film ⁇ L element ⁇ using e, ⁇ u / Z ⁇ S is shown below, and the characteristics are compared and evaluated.
- the method of producing the light emitting device of the second embodiment is exactly the same as that of the first embodiment, and the light emitting layer of the conventional device was formed by an electron beam method. Both elements are the same as in the first embodiment except for the light emitting layer.
- Fig. 5 shows the results of the evaluation, in which the electrical characteristics are evaluated as follows: The voltage dependence of the amount of mobile charge (TransfeferdChadrgeDensity (dQ)) is evaluated. That is, the value of dQ increases approximately linearly from about 160 V in the device according to the second embodiment as the voltage increases, whereas the conventional device bends at approximately 200 V. I have. These phenomena correspond to the fact that the electric equivalent surface area of the device according to the second embodiment is shown in FIG. 3 and the conventional device is shown in FIG.
- dQ TransfeferdChadrgeDensity
- FIG. 6 shows the luminance-voltage characteristic.
- the device according to the second embodiment starts emitting light at a lower voltage than the conventional device, and the luminance increases as the voltage increases.
- a device with higher brightness than the conventional device can be obtained.
- Y 2 O z S: Ce, Eu or Y 20 z S: Ce, Tb, Eu, in which Ce, Tb, and Eu are respectively introduced as luminescent center impurities, can be used. The same evaluation as in the case of was obtained.
- a color filter 16 is interposed between the glass substrate 1 and the insulating layer 3 as shown in FIG.
- the color filters 16 include filters (R) that transmit only red (R), green (G), and blue (B) light, respectively.
- a filter (G) and a filter (B) are used and these are arranged periodically.
- C In a thin film EL device using this color filter 16, the side opposite to the electrode 2 on the glass substrate 1 side
- the electrodes 8 may be puttered so as to be orthogonal to each other, and the power filter 16 may be provided below or above the intersection of the electrodes.
- FIG. 8 shows a luminance-voltage characteristic of the device according to the third embodiment
- FIG. 9 shows a light emission spectrum before passing through the power filter 16. From the rain chart, in the device of the third embodiment, a wide luminance spectrum is divided by the power filter 16 to obtain high-luminance red (R), green (G), and blue (B). It can be seen that the light is obtained.
- R red
- G green
- B blue
- the ZnS Mn thin film in which the crystallographic orientation is oriented to [011] of the wurtzite type as the thin film constituting the light expansion, and the oriented crystals are [100] and [111], respectively.
- Examples of three types of thin-film EL devices that combine three types of BaXSr (1-1x) S: Ce thin films oriented in [0] and [1 1 1] are shown below. Shown in
- the [001] oriented ZnS: Mn thin film of the wurtzite type can be obtained by forming a film under appropriate conditions using the MSD method shown in the first embodiment.
- the crystal orientation of BaXSr (1-X) S: Ce thin film can be controlled by changing the ratio of Ba, Sr and S supply amounts, Ba, SrS by the same MSD method. (See C.ference R ecordofthe 1 9 8 8 Internationa 1 D ispla R research C, E, P 1 2, 2, S. T anda, A. Miyakoshiand T. N ire
- the structure of the device of the fourth embodiment is exactly the same as the structure of the first embodiment, and the fabrication method is exactly the same except for the conditions for forming the phosphor layer.
- BaXSr (1-x) S The thin film EL device using the [100], [110], and [111] crystal orientations of the Ce thin film was replaced by [10] 0], [1 1 0], FIG. 10 shows the luminance-voltage characteristics when [1 1 1] is set. All of these elements [100], [110], and [111] do not change their emission color with voltage, but the brightness of [111] and [110] is [100] It can be seen that the brightness is higher than the brightness of. The reason for this is that the crystal orientation of the ZnS thin film is the zinc-blende-type (111) plane or the wurtzite-type (001) plane and the (111) of BaxSr (1-x) S.
- the present invention is useful as a chemically stable thin-film EL device which does not change the emission color due to a change in voltage, can obtain high-brightness light emission even at a low voltage.
- a thin film EL display capable of displaying a full force in combination with a filter is provided.
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- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/325,195 US5641582A (en) | 1992-04-16 | 1992-07-29 | Thin-film EL element |
FI944851A FI944851A0 (fi) | 1992-04-16 | 1994-10-14 | Ohutkalvoelektroluminesenssielementti |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4/121137 | 1992-04-16 | ||
JP4121137A JP2943090B2 (ja) | 1991-06-27 | 1992-04-16 | 薄膜el素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1993021744A1 true WO1993021744A1 (en) | 1993-10-28 |
Family
ID=14803790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1992/000958 WO1993021744A1 (en) | 1992-04-16 | 1992-07-29 | Thin-film el element |
Country Status (3)
Country | Link |
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US (2) | US5641582A (ja) |
FI (1) | FI944851A0 (ja) |
WO (1) | WO1993021744A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2850820B2 (ja) * | 1995-02-09 | 1999-01-27 | 株式会社デンソー | El素子 |
JP3548654B2 (ja) * | 1996-09-08 | 2004-07-28 | 豊田合成株式会社 | 半導体発光素子 |
JP3517867B2 (ja) * | 1997-10-10 | 2004-04-12 | 豊田合成株式会社 | GaN系の半導体素子 |
US6335217B1 (en) | 1997-10-10 | 2002-01-01 | Toyoda Gosei Co., Ltd. | GaN type semiconductor device fabrication |
GB9724682D0 (en) | 1997-11-21 | 1998-01-21 | Cambridge Display Tech Ltd | Electroluminescent device |
US6771019B1 (en) | 1999-05-14 | 2004-08-03 | Ifire Technology, Inc. | Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties |
US6686691B1 (en) * | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
WO2002011173A1 (en) * | 2000-07-28 | 2002-02-07 | Osram Opto Semiconductors Gmbh | Luminescence conversion based light emitting diode and phosphors for wavelength conversion |
US6610352B2 (en) * | 2000-12-22 | 2003-08-26 | Ifire Technology, Inc. | Multiple source deposition process |
JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP4539078B2 (ja) * | 2003-11-07 | 2010-09-08 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法 |
GB0326853D0 (en) * | 2003-11-19 | 2003-12-24 | Cambridge Display Tech Ltd | Optical device |
WO2020151014A1 (zh) * | 2019-01-25 | 2020-07-30 | 厦门市三安光电科技有限公司 | 一种发光二极管器件 |
Citations (5)
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JPS56107289A (en) * | 1980-01-30 | 1981-08-26 | Sharp Kk | Thin film light emitting element |
JPS57119494A (en) * | 1981-01-16 | 1982-07-24 | Omron Tateisi Electronics Co | Field light emitting device |
JPS60211798A (ja) * | 1984-04-03 | 1985-10-24 | 高橋 清 | エレクトロルミネツセンス素子 |
JPS6274986A (ja) * | 1985-09-30 | 1987-04-06 | Ricoh Co Ltd | 白色エレクトロルミネツセンス素子 |
JPH0290493A (ja) * | 1988-09-27 | 1990-03-29 | Clarion Co Ltd | 交流駆動型薄膜el素子 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US4757232A (en) * | 1985-01-16 | 1988-07-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Visual display system comprising epitaxial terbium-activated garnet material |
US4720436A (en) * | 1985-09-11 | 1988-01-19 | Ricoh Company, Ltd. | Electroluminescence devices and method of fabricating the same |
US4800173A (en) * | 1986-02-20 | 1989-01-24 | Canon Kabushiki Kaisha | Process for preparing Si or Ge epitaxial film using fluorine oxidant |
US4725344A (en) * | 1986-06-20 | 1988-02-16 | Rca Corporation | Method of making electroluminescent phosphor films |
US4983469A (en) * | 1986-11-11 | 1991-01-08 | Nippon Soken, Inc. | Thin film electroluminescent element |
US5087531A (en) * | 1988-11-30 | 1992-02-11 | Sharp Kabushiki Kaisha | Electroluminescent device |
KR970002016B1 (ko) * | 1989-09-04 | 1997-02-20 | 가부시기가이샤 고마쯔 세이샤쿠쇼 | 박막 el 소자 |
DE69027337T2 (de) * | 1990-11-02 | 1997-01-02 | Komatsu Mfg Co Ltd | Elektroluminszentes dünnfilmelement |
JP2593960B2 (ja) * | 1990-11-29 | 1997-03-26 | シャープ株式会社 | 化合物半導体発光素子とその製造方法 |
JPH0543399A (ja) * | 1991-03-08 | 1993-02-23 | Ricoh Co Ltd | 薄膜機能部材 |
US5133998A (en) * | 1991-04-08 | 1992-07-28 | Sumitomo Electric Industries, Ltd. | Method of manufacturing a fixing roller |
US5505986A (en) * | 1994-02-14 | 1996-04-09 | Planar Systems, Inc. | Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices |
-
1992
- 1992-07-29 US US08/325,195 patent/US5641582A/en not_active Expired - Fee Related
- 1992-07-29 WO PCT/JP1992/000958 patent/WO1993021744A1/ja active Application Filing
-
1994
- 1994-10-14 FI FI944851A patent/FI944851A0/fi unknown
-
1996
- 1996-01-30 US US08/594,262 patent/US5670207A/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107289A (en) * | 1980-01-30 | 1981-08-26 | Sharp Kk | Thin film light emitting element |
JPS57119494A (en) * | 1981-01-16 | 1982-07-24 | Omron Tateisi Electronics Co | Field light emitting device |
JPS60211798A (ja) * | 1984-04-03 | 1985-10-24 | 高橋 清 | エレクトロルミネツセンス素子 |
JPS6274986A (ja) * | 1985-09-30 | 1987-04-06 | Ricoh Co Ltd | 白色エレクトロルミネツセンス素子 |
JPH0290493A (ja) * | 1988-09-27 | 1990-03-29 | Clarion Co Ltd | 交流駆動型薄膜el素子 |
Also Published As
Publication number | Publication date |
---|---|
US5641582A (en) | 1997-06-24 |
FI944851A (fi) | 1994-10-14 |
FI944851A0 (fi) | 1994-10-14 |
US5670207A (en) | 1997-09-23 |
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