US9891274B2 - Device test method - Google Patents

Device test method Download PDF

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Publication number
US9891274B2
US9891274B2 US14/915,171 US201414915171A US9891274B2 US 9891274 B2 US9891274 B2 US 9891274B2 US 201414915171 A US201414915171 A US 201414915171A US 9891274 B2 US9891274 B2 US 9891274B2
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motor
probe
mounting table
moving force
test method
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US20160209465A1 (en
Inventor
Masataka Hatta
Kazunari Ishii
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/44—Modifications of instruments for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
    • G05B19/19—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
    • G05B19/21—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path using an incremental digital measuring device
    • G05B19/23—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path using an incremental digital measuring device for point-to-point control
    • G05B19/231—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path using an incremental digital measuring device for point-to-point control the positional error is used to control continuously the servomotor according to its magnitude
    • G05B19/234—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path using an incremental digital measuring device for point-to-point control the positional error is used to control continuously the servomotor according to its magnitude with current or torque feedback only

Definitions

  • the present invention relates to a device test method for measuring an electrical characteristic of a device formed on a substrate.
  • a prober is known as an apparatus for measuring an electrical characteristic of a semiconductor device, e.g., a power device or a memory formed on a semiconductor wafer (hereinafter, simply referred to as “wafer”) W that is a substrate.
  • a semiconductor device e.g., a power device or a memory formed on a semiconductor wafer (hereinafter, simply referred to as “wafer”) W that is a substrate.
  • the prober includes a disk-shaped probe card 111 having a plurality of cantilever-type probe needles 110 shown in FIG. 12 .
  • the prober makes each probe needle 110 of the probe card 111 contact with an electrode pad 120 , which serves as a measuring electrode, arranged corresponding to each electrode of a semiconductor device, and allows a test current to flow from each of the probe needles 110 to the electrode pads 120 , thereby measuring an electrical characteristic of the semiconductor device (see, e.g., Patent Document 1).
  • a wafer W is mounted on a stage that is movable by, e.g., a linear motor, and by moving the stage, each probe needle 110 of the probe card 111 is positioned to correspond to each electrode pad 120 .
  • relatively small hemispherical solder bumps 130 shown in FIG. 14A have been arranged in a high density on a wafer W to correspond to electrodes of the semiconductor device (see FIG. 14B ); e.g., about 10,000 or more bumps per device are being arranged.
  • the cantilever-type probe needles 110 have a limit to be miniaturized and their high density arrangement is difficult. Therefore, it is difficult to arrange a large number of probe needles 110 at the probe card in a high density.
  • the probe card 111 instead of the cantilever-type probe needles 110 , there are provided columnar probe electrodes 141 protruding downward and each having at a leading end thereof a protuberant engagement part 140 .
  • a wafer W is made to approach the probe card 111 ( FIG. 15A ), the probe electrodes 141 are brought into contact with the solder bumps 130 ( FIG. 15B ), and the engagement parts 140 are pushed into the solder bumps 130 to engage the probe electrodes 141 with the solder bumps 130 ( FIG. 15C ).
  • the probe electrodes 141 and the solder bumps 130 maintain contact with each other.
  • Patent Document 1 Japanese Patent Application Publication No. H7-297242
  • the probe card 111 may be thermally expanded by the heat generated by current flow while the electrical characteristic of the semiconductor device is measured. Then, the probe card 111 may move along a surface of the wafer W (see a black arrow in FIG. 15C ).
  • a moving force is applied to the solder bumps 130 due to the movement of the probe card 111 (see a white arrow in FIG. 15C ) while the linear motor is operated to keep the stage from moving. Since the linear motor generates torque to offset the moving force, load occurs in the linear motor. For example, a moving force of 30 kgf or more may be generated with respect to one device, so that when the linear motor generates torque to offset the moving force, the linear motor may be overloaded to be damaged in some cases.
  • the present invention provides a device test method capable of limiting the load of a motor for moving a stage to a predetermined value or less.
  • a device test method performed in a substrate test apparatus which includes a mounting table for mounting thereon a substrate on which a device having an electrode is formed, the mounting table being movable by a motor, and a probe card arranged to face the mounting table, wherein a measuring electrode is arranged to correspond to the electrode of the device, the probe card has a probe that is engageable with the measuring electrode, and the motor generates torque to keep the mounting table from moving when measuring an electrical characteristic of the device, the device test method including: a step of engaging the probe with the measuring electrode; and a step of limiting to a predetermined value or less a maximum value of the torque generated by the motor when measuring an electrical characteristic of the device after the engaging step.
  • the limitation of the maximum value of the torque may be canceled after measuring the electrical characteristic of the device.
  • the mounting table may be moved to limit to a specific value or less a moving force which is generated and applied to the measuring electrode at the time of the engaging step.
  • the measuring electrode may be an electrode pad or a solder bump
  • the probe may include a protuberant member that is engageable with the measuring electrode
  • the mounting table may be configured to be movable in each of two directions that are orthogonal to each other on a horizontal plane, and the substrate test apparatus may have the motor corresponding to each of the two directions.
  • the predetermined value may be equal to or less than 100% of a rated output of the motor.
  • the motor may be a linear motor which is relatively moved with respect to a rail.
  • the motor may move the mounting table through a ball screw.
  • a maximum value of torque, which is generated by the motor to keep the mounting table from moving is limited to a predetermined value or less. Therefore, in a case where the probe card is thermally expanded and a moving force applied to the measuring electrode due to the thermal expansion exceeds a predetermined value, the motor allows the mounting table to move. By doing so, a reaction force due to a fine misalignment between the probe and the corresponding measuring electrode is canceled and load greater than a predetermined load value is not imposed on the motor. Consequently, the load of the motor for moving the mounting table can be limited to the predetermined load value or less.
  • FIG. 1 is a perspective view schematically showing a configuration of a prober serving as a substrate test apparatus for performing a device test method in accordance with an embodiment of the present invention.
  • FIG. 2A is a perspective view schematically showing a configuration of a moving mechanism of a stage shown in FIG. 1 .
  • FIG. 2B is a side view schematically showing a configuration of a Y-direction motor and an X-direction motor in the moving mechanism shown in FIG. 2A .
  • FIG. 2C is a side view schematically showing a modified configuration of the Y-direction motor and the X-direction motor in the moving mechanism shown in FIG. 2A .
  • FIG. 3 is a flow chart showing the device test method in accordance with the embodiment.
  • FIG. 4 is a flow chart showing a moving force adjustment process performed in the device test method of FIG. 3 .
  • FIGS. 5A and 5B are process diagrams for explaining the moving force adjustment process of FIG. 4 .
  • FIGS. 6A to 6C are process diagrams for explaining the effect of limiting a maximum value of torque of a motor in the device test method of FIG. 3 .
  • FIG. 7 is a flow chart showing a modified example of the device test method of FIG. 3 .
  • FIG. 8 is a flow chart showing a first modified example of the moving force adjustment process of FIG. 4 .
  • FIG. 9 is a flow chart showing a second modified example of the moving force adjustment process of FIG. 4 .
  • FIGS. 10A to 10C are process diagrams for explaining reduction of an excessive moving force in a case of using a modified example of a probe card in FIG. 2A .
  • FIGS. 11A and 11B are process diagrams for explaining a process in which a moving force is generated on each solder bump in a case of using a modified example of the probe card in FIG. 2A .
  • FIG. 12 is a perspective view schematically showing a configuration of a disk-shaped probe card having cantilever-type probe needles.
  • FIG. 13 is a cross-sectional view showing a process in which a probe needle of the probe card shown in FIG. 12 is made contact with an electrode pad of a device on a wafer.
  • FIG. 14A is an enlarged perspective view for explaining a solder bump in a device.
  • FIG. 14B is a view showing the arrangement of each solder bump in a device.
  • FIG. 15A to 15C are process diagrams for explaining a process in which a moving force is generated on each solder bump in a conventional prober.
  • FIG. 1 is a perspective view schematically showing a configuration of a prober serving as a substrate test apparatus for performing a device test method in accordance with an embodiment.
  • a prober 10 (substrate test apparatus) includes a main body 12 which accommodates a stage 11 (mounting table) on which a wafer W is mounted, a loader 13 arranged adjacent to the main body 12 , and a test head 14 arranged to cover the main body 12 .
  • the prober 10 measures electrical characteristics of a plurality of semiconductor devices formed on the wafer W having a large diameter of, e.g., 300 or 450 mm.
  • the main body 12 has a hollow case shape. At a ceiling portion 12 a of the main body 12 , an opening 12 b is provided to be opened above the top of the wafer W mounted on the stage 11 .
  • a substantially disk-shaped probe card holder 16 is engaged with the opening 12 b and the probe card holder 16 holds a disk-shaped probe card 17 (see FIG. 2A to be described later). Accordingly, the probe card 17 faces the wafer W.
  • the wafer W is vacuum-sucked to the stage 11 such that the wafer W is not relatively misaligned with respect to the stage 11 .
  • Solder bumps 27 are arranged to correspond to electrodes in each of the semiconductor devices formed on the wafer W.
  • the test head 14 has a rectangular parallelepiped shape and is pivotable in an up-down direction through a hinge mechanism 15 provided at the main body 12 .
  • the test head 14 is electrically connected to the probe card 17 through a contact ring (not shown).
  • the test head 14 includes a data storage unit (not shown) which stores, as measured data, electric signals indicating the electrical characteristics of the semiconductor devices transmitted from the probe card 17 , and a determination unit (not shown) which determines whether or not the semiconductor devices have an electric fault based on the measured data.
  • the loader 13 takes out a wafer W, on which a semiconductor device is formed, accommodated in a FOUP (not shown) that is a transfer container and mounts the wafer W on the stage 11 of the main body 12 . Further, the loader 13 receives from the stage 11 a wafer W that has been subjected to the electrical characteristic test on its semiconductor device and accommodates the wafer W to the FOUP.
  • a plurality of probe electrodes 28 (see FIG. 5A to be described later) is arranged, on a surface of the probe card 17 facing the wafer W, to correspond to the solder bumps 27 of the semiconductor device on the wafer W.
  • the stage 11 adjusts relative positions between the probe card 17 and the wafer W to make the solder bumps 27 of the semiconductor device contact with the respective probe electrodes 28 .
  • the test head 14 supplies a test current to the semiconductor device through the probe electrodes 28 of the probe card 17 . Then, the probe card 17 transmits an electric signal indicating the electrical characteristic of the semiconductor device to the data storage unit of the test head 14 .
  • the data storage unit stores the transmitted electric signal as measured data and the determination unit determines whether or not the semiconductor device that is a test target has an electric fault based on the stored measured data.
  • FIG. 2A is a perspective view schematically showing a configuration of a moving mechanism of the stage shown in FIG. 1 .
  • FIG. 2B is a side view schematically showing a configuration of a Y-direction motor and an X-direction motor in the moving mechanism shown in FIG. 2A .
  • FIG. 2C is a side view schematically showing a modified configuration of the Y-direction motor and the X-direction motor in the moving mechanism shown in FIG. 2A .
  • a moving mechanism 18 of the stage 11 includes a Y-direction stage 19 which moves in a Y direction shown in FIG. 2A , a X-direction stage 20 which moves in an X direction shown in FIG. 2A , and a Z-direction moving unit 21 which moves in a Z direction shown in FIG. 2A .
  • X, Y and Z directions are orthogonal to one another.
  • the Y-direction stage 19 is driven in a high precision along a rail 22 arranged in the Y direction by the Y-direction motor and the X-direction stage 20 is driven in a high precision along a rail 23 arranged in the X direction by the X-direction motor.
  • the stage 11 is arranged on the Z-direction moving unit 21 to be rotatable in a ⁇ direction shown in FIG. 2A .
  • the wafer W is mounted on the stage 11 .
  • each of the Y-direction motor and the X-direction motor is a linear motor having a coil 33 and a magnet array 34 , wherein the coil 33 is attached to the Y-direction stage 19 or the X-direction stage 20 , and the magnet array 34 faces the coil 33 and is formed of N-pole permanent magnets and S-pole permanent magnets arranged alternately along the rail 22 or 23 .
  • the magnet array 34 faces the coil 33 and is formed of N-pole permanent magnets and S-pole permanent magnets arranged alternately along the rail 22 or 23 .
  • each of the Y-direction motor and the X-direction motor may be a ball screw motor having a nut 37 and a ball screw 36 , wherein the nut 37 is attacted to the Y-direction stage 19 or the X-direction stage 20 , and the ball screw 36 is coupled to the nut 37 and arranged parallel to the rail 22 or 23 and rotates on its axis by a rotation motor 35 .
  • the moving mechanism 18 the Y-direction stage 19 , the X-direction stage 20 and the Z-direction moving unit 21 cooperatively move the wafer W to a position corresponding to the probe card 17 , and make the solder bumps 27 of the semiconductor device formed on the wafer W contact with the respective probe electrodes 28 of the probe card 17 .
  • the operations of the respective components of the prober 10 are controlled by a controller 29 (see FIG. 1 ) included in the prober 10 in accordance with a predetermined program and the like.
  • FIG. 3 is a flow chart showing the device test method in accordance with the present embodiment.
  • the device test method is performed by the controller 29 .
  • step S 301 the relative positions of the probe card 17 and the wafer W are adjusted by the Y-direction stage 19 and the X-direction stage 20 to make each probe electrode 28 of the probe card 17 correspond to each solder bump 27 of the semiconductor device to be inspected in the wafer W. Thereafter, each solder bump 27 is made to contact with each probe electrode 28 by the Z-direction moving unit 21 .
  • a moving force adjustment process is performed by the Y-direction stage 19 and the X-direction stage 20 in step S 302 .
  • FIG. 4 is a flow chart showing the moving force adjustment process performed in step S 302 of FIG. 3 .
  • the moving force adjustment process of FIG. 4 is carried out by the controller 29 of the prober 10 .
  • step S 401 first, when the solder bumps 27 of the semiconductor device are made to contact with the respective probe electrodes 28 , load imposed on the X-direction motor is measured in step S 401 .
  • the wafer W on which the hemispherical solder bumps 27 are arranged is made, by the Z-direction moving unit 21 , to approach the probe card 17 on which the columnar probe electrodes 28 are arranged, the columnar probe electrodes 28 protruding downward and each having at a leading end thereof a protuberant engagement part 30 .
  • Each probe electrode 28 is made to contact with each solder bump 27 so that each engagement part 30 is pushed into each solder bump 27 .
  • each probe electrode 28 is engaged with each solder bump 27 (electrode engagement step).
  • a reaction force caused by a fine misalignment between the probe electrodes 28 and the corresponding solder bumps 27 is applied to the probe card 17 so that the probe card 17 is moved along a surface of the wafer W. Consequently, a moving force (see a white arrow in FIG. 5A ) is applied to the solder bumps 27 to follow the movement of the probe card 17 .
  • step S 401 the load imposed on the X-direction motor, which generates the torque to offset the X-direction component of the moving force, is measured.
  • step S 402 it is determined in step S 402 whether the load imposed on the X-direction motor is equal to or smaller than a few percent, e.g., 5%, of a rated output of the X-direction motor. If the load imposed on the X-direction motor is larger than 5% of the rated output (NO in step S 402 ), the X-direction stage 20 moves a minute amount, e.g., 1 ⁇ m in a working direction of the moving force (step S 403 ), and then the flow returns to step S 401 . Accordingly, the X-direction component of the moving force generated by the reaction force applied to the probe card 17 is reduced (see FIG. 5B ). On the other hand, if the load imposed on the X-direction motor is equal to or smaller than 5% of the rated output (YES in step S 402 ), the flow goes to step S 404 .
  • a few percent e.g., 5%
  • step S 405 it is determined in step S 405 whether the load imposed on the Y-direction motor, which generates torque to offset the Y-direction component, is equal to or smaller than several percent of a rated output of the Y-direction motor, e.g., 5% of the rated output. If the load imposed on the Y-direction motor is larger than 5% of the rated output (NO in step S 405 ), the Y-direction stage 19 moves a minute amount, e.g., 1 ⁇ m in a working direction of the moving force in step S 406 , and then the flow returns to step S 404 . Accordingly, the Y-direction component of the moving force generated by the reaction force applied to the probe card 17 is reduced (see FIG.
  • step S 405 if the load imposed on the Y-direction motor is equal to or smaller than 5% of the rated output (YES in step S 405 ), the process is terminated and the flow goes to step S 303 of FIG. 3 .
  • the controller 29 limits a maximum value of the torque generated by the X-direction motor to a predetermined value or less, e.g., 15% or less of the rated output of the X-direction motor in step S 303 (torque limiting step). Further, the controller 29 limits a maximum value of the torque generated by the Y-direction motor to a predetermined value or less, e.g., 15% or less of the rated output of the Y-direction motor in step S 304 (torque limiting step).
  • step S 305 the controller 29 allows a test current to flow from the test head 14 to the semiconductor device through the probe electrodes 28 of the probe card 17 and the solder bumps 27 and starts to measure the electrical characteristic of the semiconductor device.
  • the probe card 17 is thermally expanded by the heat generated by the flowing test current so that the probe card 17 moves along a surface of the wafer W (see a black arrow in FIG. 6A ).
  • a moving force (see a white arrow in FIG. 6A ) is applied to the solder bumps 27 due to the movement of the probe card 17 .
  • the X-direction motor generates torque to offset the X-direction component of the moving force and the Y-direction motor generates torque to offset the Y-direction component of the moving force.
  • maximum values of the torques generated in the X-direction motor and the Y-direction motor are limited to 15% or less of their own rated output. Therefore, in a case where a thermal expansion amount of the probe card 17 is not that great and the X-direction component and the Y-direction component of the moving force applied to the solder bumps 27 are 15% or less of the rated outputs of the X-direction motor and the Y-direction motor (see FIG. 6A ), the moving force is canceled by the torque generated in the X-direction motor and the Y-direction motor, so that the stage 11 does not move.
  • step S 306 determines whether the electrical characteristic measurement of the semiconductor device has been completed or not. If the measurement has not been completed (NO in step S 306 ), the flow returns to step S 306 . If the measurement has been completed (YES in step S 306 ), the wafer W is moved away from the probe card 17 to separate the probe electrodes 28 from the solder bumps 27 (step S 307 ).
  • step S 308 the controller 29 cancels the limitation of the maximum value of the torque generated in the X-direction motor (step S 308 ), and also cancels the limitation of the maximum value of the torque generated in the Y-direction motor (step S 309 ). Further, in step S 310 , the controller 29 determines whether the electrical characteristic measurement has been completed with respect to all of the semiconductor devices on the wafer W.
  • step S 310 if the electrical characteristic measurement has not been completed with respect to all of the semiconductor devices (NO in step S 310 ), the stage 11 is moved by the Y-direction stage 19 and the X-direction stage 20 (step S 311 ) to allow the probe electrodes 28 of the probe card 17 to correspond to the respective solder bumps 27 of a subsequent semiconductor device to be measured on the wafer W. If the electrical characteristic measurement has been completed with respect to all of the semiconductor devices (YES in step S 310 ), the test of the semiconductor devices is terminated.
  • the maximum values of torques generated by the X-direction motor and the Y-direction motor are limited to 15% or less of the rated outputs of the respective motors. Accordingly, in a case where the probe card 17 is thermally expanded and a moving force applied to the solder bumps 27 due to the thermal expansion exceeds 15% of the rated outputs of the respective motors, the X-direction motor and the Y-direction motor allow the movement of the stage 11 .
  • the stage 11 is moved to limit a moving force applied to the solder bumps 27 to a specific value or less, the moving force being generated at the time of the engagement of the probe electrodes 28 with the solder bumps 27 . Accordingly, it is possible to limit the moving force applied to the solder bumps 27 to the specific value or less during the measurement of the electrical characteristic of the semiconductor device.
  • a maximum value of torque generated by the X-direction motor and the Y-direction motor is limited only in a case of measuring the electrical characteristic of the semiconductor device. Therefore, for example, when the stage 11 is moved to measure the electrical characteristic of a subsequent semiconductor device, each of the X-direction motor and the Y-direction motor can generates a large torque which allows the stage 11 to rapidly move, thereby improving throughput.
  • the stage 11 is moved to limit the moving force applied to the solder bumps 27 , which is generated at the time of the engagement of the probe electrodes 28 with the solder bumps 27 , to the specific value or less by performing the moving force adjustment process of FIG. 4 before measuring the electrical characteristic of the semiconductor device.
  • the moving force adjustment process of step S 302 may be removed from the device test method of FIG. 3 and the limitation of the maximum value of the torque in the X-direction motor and the Y-direction motor may be performed, and thereafter, the electrical characteristic of the semiconductor device may be measured.
  • the stage 11 is allowed to move and thus the moving force applied to the solder bumps 27 can be limited to a certain value or less.
  • the process of limiting the moving force applied to the solder bumps 27 to the specific value or less is not performed.
  • the moving force applied to the solder bumps 27 may be limited to a smaller value.
  • the moving force applied to the solder bumps 27 may be eliminated regardless of the loads imposed on the X-direction motor and the Y-direction motor.
  • FIG. 8 is a flow chart showing a first modified example of the moving force adjustment process of FIG. 4 .
  • redundant description on the same steps as those in the moving force adjustment process of FIG. 4 will be omitted.
  • step S 801 if the load imposed on the X-direction motor is equal to or smaller than 5% of the rated output of the X-direction motor (YES in step S 402 ), it is determined whether the load imposed on the X-direction motor is equal to or smaller than 3% of the rated output (step S 801 ). If the load imposed on the X-direction motor is equal to or smaller than 5% of the rated output and larger than 3% of the rated output (NO in step S 801 ), the X-direction motor is stopped (step S 802 ) and the flow returns to step S 401 . At this time, since the X-direction motor does not generate torque, the wafer W moves in the X-direction by the X-direction component of the moving force applied to the solder bumps 27 to cancel the X-direction component of the moving force.
  • step S 801 if the load imposed on the X-direction motor is equal to or smaller than 3% of the rated output (YES in step S 801 ), the flow goes to step S 404 and then step S 405 . If the load imposed on the Y-direction motor is equal to or smaller than 5% of the rated output of the Y-direction motor (YES in step S 405 ), it is determined whether the load imposed on the Y-direction motor is equal to or smaller than 3% of the rated output (step S 803 ).
  • step S 803 if the load imposed on the Y-direction motor is equal to or smaller than 5% of the rated output and larger than 3% of the rated output (NO in step S 803 ), the Y-direction motor is stopped (step S 804 ) and the flow returns to step S 404 . At this time, since the Y-direction motor does not generate torque, the wafer W moves in the Y-direction by the Y-direction component of the moving force applied to the solder bumps 27 to cancel the Y-direction component of the moving force.
  • step S 803 if the load imposed on the Y-direction motor is equal to or smaller than 3% of the rated output (YES in step S 803 ), the process is terminated.
  • FIG. 9 is a flow chart showing a second modified example of the moving force adjustment process of FIG. 4 .
  • the X-direction motor is stopped in step S 901 and the Y-direction motor is stopped in step S 902 . Thereafter, the process is terminated.
  • the wafer W moves in the X-direction and the Y-direction by the X-direction component and the Y-direction component of the moving force applied to the solder bumps 27 to cancel the X-direction component and the Y-direction component of the moving force.
  • Each of the probe electrodes 28 on the aforementioned probe card 17 protrudes downward from the probe card 17 and is a columnar electrode having at a leading end thereof the protuberant engagement part 30 .
  • the shape of the probe electrode is not limited thereto.
  • a probe electrode 31 may be a columnar electrode having at a leading end thereof a hemispheric depressed portion 32 which is engageable with the solder bump 27 .
  • the X-direction motor and the Y-direction motor generate torques to offset the moving force (see a white arrow in FIG. 11A ) applied to the solder bumps 27 , thereby imposing loads on the motors, the moving force being generated by a movement of the probe card 17 due to a thermal expansion of the probe card 17 (see a black arrow in FIG. 11A ).
  • the stage 11 is allowed to move (see FIG. 11B ) when a large moving force is generated. Therefore, each of loads on the X-direction motor and the Y-direction motor can be limited to a predetermined load value or less.
  • the maximum values of the torques generated by the X-direction motor and the Y-direction motor are limited to 15% or less of the rated outputs of the respective motors.
  • the limitation of the maximum values of the torques is not limited to the above value.
  • the maximum values of the torques may be limited to 100% or less of the rated outputs of the respective motors. If the X-direction motor and the Y-direction motor successively generate torques of 100% or less of the rated outputs, there is almost no possibility that the X-direction motor and the Y-direction motor are damaged. Accordingly, by doing so, a concern about damage of the X-direction motor and the Y-direction motor can be removed.
  • the X-direction motor and the Y-direction motor are linear motors.
  • the X-direction motor and the Y-direction motor may be rotation motors that rotate ball screws.
  • the X-direction motor and the Y-direction motor move the X-direction stage 20 and the Y-direction stage 19 in the X-direction and the Y-direction by rotating the ball screws arranged in the X-direction and the Y-direction, respectively. Even if such rotation motors are used, the device test method of FIG. 3 and the moving force adjustment process of FIG. 4 can be applied.
  • the object of the present invention may also be achieved by providing, to a computer, e.g., to the controller 29 , a storage medium in which program codes of software for implementing functions of the above-described embodiment are stored, and by reading out and executing the program codes stored in the storage medium by using a CPU of the controller 29 .
  • the program codes themselves read out from the storage medium implement the functions of the above-described embodiment. Therefore, the program codes and the storage medium in which the program codes are stored constitute the present invention.
  • the storage medium for supplying the program codes may be one that can store the program codes, e.g., may be RAM (random-access memory), NV-RAM (non-volatile random access memory), a FloppyTM disk, a hard disk, an optical magnetic disk, an optical disk such as CD-ROM (compact disc read-only memory), CD-R (compact disc recordable), CD-RW (compact disc rewritable) and DVD (digital versatile disc) (DVD-ROM, DVD-RAM, DVD ⁇ RW or DVD+RW), a magnetic tape, a nonvolatile memory card, other ROMs or the like.
  • the program codes may be supplied to the controller 29 by being downloaded from a computer (not shown), database (not shown) or the like connected to a local area network or the like.
  • the function of the above embodiment is realized by executing the program codes read out by the controller 29 . Further, based on the instruction of the program codes, OS (operating system) or the like being operated on CPU may perform a part or the whole of a real process and the function of the above embodiment may be realized by the process.
  • OS operating system
  • the program codes read out from the storage medium may be written to a memory included in a function extension board inserted in the controller 29 or a function extension unit connected to the controller 29 . Then, based on the instruction of the program codes, CPU or the like included in the function extension board or the function extension unit may perform a part or the whole of a real process and the function of the above embodiment may be realized by the process.
  • the program codes may have a form of object codes, program codes executed by an interpreter, script data supplied to the OS, or the like.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
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KR20200107132A (ko) 2019-03-06 2020-09-16 세메스 주식회사 척 구조물 및 이를 포함하는 프로브 스테이션
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WO2015029742A1 (ja) 2015-03-05
US20160209465A1 (en) 2016-07-21
EP3041038A4 (en) 2017-04-05
JP2015046489A (ja) 2015-03-12
KR20160048888A (ko) 2016-05-04
JP6137994B2 (ja) 2017-05-31
EP3041038A1 (en) 2016-07-06
TW201522996A (zh) 2015-06-16

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