US9873954B2 - Epitaxial wafer and method for fabricating the same - Google Patents

Epitaxial wafer and method for fabricating the same Download PDF

Info

Publication number
US9873954B2
US9873954B2 US14/406,070 US201314406070A US9873954B2 US 9873954 B2 US9873954 B2 US 9873954B2 US 201314406070 A US201314406070 A US 201314406070A US 9873954 B2 US9873954 B2 US 9873954B2
Authority
US
United States
Prior art keywords
growth
epitaxial layer
epitaxial
predetermined
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US14/406,070
Other languages
English (en)
Other versions
US20150259828A1 (en
Inventor
Seok Min Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LX Semicon Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Assigned to LG INNOTEK CO., LTD. reassignment LG INNOTEK CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANG, SeokMin
Publication of US20150259828A1 publication Critical patent/US20150259828A1/en
Application granted granted Critical
Publication of US9873954B2 publication Critical patent/US9873954B2/en
Assigned to LX SEMICON CO., LTD. reassignment LX SEMICON CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LG INNOTEK CO., LTD.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Definitions

  • the present invention relates to a method of fabricating an epitaxial wafer, and more particularly, to an epitaxial wafer in which surface defect density is reduced and doping uniformity is improved, and a method of fabricating the same.
  • epitaxial growth includes a chemical vapor deposition process and a substrate such as a single crystal silicon wafer is heated while a silicon compound in a gaseous, liquid, or solid state is transferred through a surface of the substrate and affects thermal decomposition or decomposition.
  • a substrate such as a single crystal silicon wafer is heated while a silicon compound in a gaseous, liquid, or solid state is transferred through a surface of the substrate and affects thermal decomposition or decomposition.
  • silicon is stacked by continuously growing a single crystal structure.
  • defects such as a cohesion silicon self-gap defect, or the like, which exist on the surface of the substrate, may directly affect quality of an epitaxial wafer.
  • the defects which exist on the surface of the substrate is continuously grown together with continuously growing the single crystal structure, and thus this may cause forming of a new crystal defect, that is, a growth defect in an epitaxial layer.
  • a surface defect such as an epitaxial stacking defect and a hillock in a range of about 0.1 microns to 10 microns may be formed. Therefore, a method and process of fabricating a substrate which does not substantially have such a surface defect problem is required in an epitaxial growth process.
  • the doped epitaxial wafer has doping uniformity from a center to an edge, which meets a desired range according to the design specifications. Therefore, a method and process of fabricating the epitaxial wafer capable of improving the doping uniformity is required.
  • the present invention is directed to providing a high quality epitaxial wafer, in which surface defect density is reduced, doping uniformity is improved, and thus characteristics and yield are improved, and a method of fabricating the same.
  • One aspect of the present invention provides a method of fabricating of an epitaxial wafer, the method including: a pre-growth step of injecting a reaction source for epitaxial growth on a semiconductor wafer prepared in a chamber and growing an epitaxial layer by a predetermined first thickness at a predetermined first growth rate and at a predetermined first growth temperature; a heat treatment step of performing heat treatment on the epitaxial layer grown by the pre-growth step during a predetermined time; and a subsequent growth step of injecting the reaction source on the heat-treated semiconductor wafer and growing the epitaxial layer to a target thickness at a predetermined second growth rate and at a predetermined second growth temperature, and the first growth rate is smaller than the second growth rate.
  • the first growth temperature may be lower than the second growth temperature.
  • the semiconductor wafer may be a silicon carbide wafer and the reaction source may be a solid, liquid, or gaseous material including carbon and silicon.
  • the second growth temperature may be set within a range of 1500° C. to 1700° C.
  • the first growth temperature may be set within a range of 1500° C. to 1700° C.
  • the second growth rate may be set to 20 ⁇ m/h or more and the first growth rate is set to 5 ⁇ m/h or less
  • the first thickness may be set within a range of 0.5 ⁇ m to 1 ⁇ m.
  • a heat-treatment temperature in the heat treatment step may be set within a range of 1500° C. to 1700° C.
  • a high quality epitaxial wafer in which surface defect density is reduced, doping uniformity is improved, and thus characteristics and yield are improved, can be fabricated.
  • FIG. 1 is a view for describing a process of fabricating an epitaxial wafer according to an exemplary embodiment of the present invention.
  • FIG. 2 is a flowchart showing a method of fabricating an epitaxial wafer according to an exemplary embodiment of the present invention.
  • FIG. 3 is a graph showing an example of a growth condition in the method of fabricating the epitaxial wafer according to the exemplary embodiment of the present invention.
  • FIG. 4 is a conceptual view showing an epitaxial wafer according to an exemplary embodiment of the present invention.
  • the present invention provides a method capable of reducing surface defect density of a fabricated epitaxial wafer.
  • the surface defect density of the epitaxial wafer may be changed by variables such as a flux of reaction gas which is injected in an initial stage, a growth temperature, pressure, a total flux, a C/Si ratio, a Si/H 2 ratio, etc.
  • the present invention provides a method for reducing the surface defect density to 0.5/cm 2 or less (i.e., 0.5 defects per 1 cm 2 or less).
  • the present invention uses a method of controlling a growth temperature, a growth rate (i.e., a flux of reaction gas which is injected), a thickness of an epitaxial layer to be grown in a pre-growth step, and a C/Si ratio. Further, doping uniformity may also be improved by the method of fabricating the epitaxial wafer according to the embodiment of the present invention. This may be clearly understood through detailed descriptions of the following accompanying drawings.
  • FIG. 1 is a view for describing a process of fabricating an epitaxial wafer according to an exemplary embodiment of the present invention
  • FIG. 2 is a flowchart showing the method of fabricating the epitaxial wafer according to the exemplary embodiment of the present invention
  • FIG. 3 is a graph showing an example of a growth condition in the method of fabricating the epitaxial wafer according to the exemplary embodiment of the present invention.
  • a semiconductor wafer 110 (see FIG. 1 ) is prepared in a reaction chamber (S 210 ), and then a pre-growth step (see FIG. 1 ) is performed (S 220 ).
  • a silicon carbide based wafer (a 4H-SiC wafer) is illustrated, the wafer may be different according to a device or a product to be finally fabricated.
  • an epitaxial layer 115 (see FIG. 1 ) may serve as a kind of a buffer layer by stacking (growing) the epitaxial layer 115 on the semiconductor wafer is widely used.
  • the semiconductor wafer is not relevant to use as a substrate of the product when the surface defect is greater than or equal to an allowable value (generally, when surface defect density is more than 1/cm 2 ). Therefore, in the exemplary embodiment of the present invention, the pre-growth step in S 220 of FIG. 2 is used as a method of reducing the surface defect density to 0.5/cm 2 or less.
  • the pre-growth step is performed at a growth rate (hereinafter, referred to as a first growth rate) smaller than a growth rate (hereinafter, referred to as a second growth rate) in a subsequent growth step in S 240 .
  • the pre-growth step may be performed at a growth temperature (hereinafter, referred to as a first growth temperature) lower than a growth temperature (hereinafter, referred to as a second growth temperature) in the subsequent growth step in S 240 .
  • the growth temperature in the subsequent growth step when the growth temperature in the subsequent growth step is set within a range of 1500° C. to 1700° C., the growth temperature in the pre-growth step may be set within a range of 1400° C. to 1500° C.
  • the pre-growth step is a process of growing the epitaxial layer on the semiconductor wafer at the first growth rate smaller than the second growth rate and at the first growth temperature lower than the second growth temperature when a reaction source for an epitaxial growth is injected into a reaction chamber.
  • the reaction source is different according to a material or type of the semiconductor wafer which is an object of the epitaxial layer to be stacked.
  • the semiconductor wafer 110 is a silicon carbide based wafer as shown in FIG. 1
  • a solid, liquid, or gaseous material containing silicon compound such as SiH 4 +C 3 H 8 +H 2 , MTS(CH 3 SiCl 3 ), TCS(SiHCl 3 ), Si x C x , or the like, which are materials capable of matching lattice constant, may be used as the reaction source.
  • the first growth rate may be set to 5 ⁇ m/h or less (i.e., a rate in which the epitaxial layer is stacked to have a thickness in a range of 5 ⁇ m or less per an hour).
  • the growth rate may be controlled by controlling a flux of a reaction source implanted in the chamber.
  • the uniform stacking (growing) of the epitaxial layer may be difficult. Therefore, in the above-described pre-growth step, as a predetermined growth temperature is maintained, mobility between atoms by the reaction source is increased and an environment capable of uniformly growing is prepared. Then, as the growth rate is reduced, time in which the atoms are uniformly distributed and grown on the semiconductor wafer is granted. Further, dislocation density formed inside the epitaxial layer may be reduced.
  • a thickness of the epitaxial layer grown by the pre-growth step may be sufficient to set within a range of approximately 0.5 ⁇ m to 1.0 ⁇ m.
  • the thickness of the epitaxial layer grown by the pre-growth step may be controlled by controlling the growth temperature, the growth rate, and a growth time t 1 (see FIG. 3 ), which were described above.
  • a heat treatment step (see FIG. 1 , a time in range of t 1 to t 2 of FIG. 3 , that is, a reference numeral A of FIG. 3 ) in S 230 is performed.
  • the heat treatment step is a process inserted between the above-described pre-growth step and the subsequent growth step to be described below in order to improve doping uniformity of the epitaxial layer to be fabricated according to the exemplary embodiment of the present invention.
  • a process of doping the epitaxial layer to be grown with an N-type or a P-type may be simultaneously performed in the process of growing the epitaxial layer.
  • the doping type is determined according to use of the epitaxial wafer, purpose, and the like, and this is possible to include doping gas which is required for N-type or P-type doping in the reaction gas.
  • doping particles of particular polarity are not fully substituted with elements of Group 4 included in the epitaxial layer and may remain only in a state of being penetrated in the epitaxial layer.
  • the heat treatment step in S 230 is inserted after the pre-growth step and before the subsequent growth step, and thus a method in which doping uniformity of the finally fabricated epitaxial wafer is also improved is used.
  • the above-described heat treatment step is performed during a predetermined time and then the subsequent growth step in S 240 is performed again.
  • the subsequent growth step is a process of mainly performing epitaxial growth and a growth process after the pre-growth step is already performed, the epitaxial growth may be performed at a very fast rate compared to the growth rate of the pre-growth step.
  • the subsequent growth step in S 240 may be performed at a rate of 20 ⁇ m/h or more as shown in FIG. 3 .
  • the growth temperature (i.e., the second growth temperature) in the subsequent growth step may be set within a range of 1500° C. to 1700° C. as described above.
  • the subsequent growth step may be performed until a total thickness of the epitaxial layer becomes a target thickness to be grown.
  • the target thickness may be changed by purpose of the epitaxial wafer, usage, natures of the final device and the product, design values, etc.
  • the method of fabricating the epitaxial wafer according to the exemplary embodiment of the present invention which performs the subsequent growth step after the pre-growth step is performed at a very low growth rate, has an advantage in which processing time and cost may be reduced in addition to reduction of surface defect density compared to the conventional technique.
  • the epitaxial layer has been grown at the low growth rate in a range of about 8 ⁇ m/h to 10 ⁇ m/h to avoid a surface defect density problem.
  • a complex process of polishing the epitaxial layer again to a target thickness was performed after excessively growing to have a thickness of 50 ⁇ m.
  • a growth process may be performed at a very fast growth rate in the subsequent growth step. Since an additional polishing process is not needed, total processing time and cost may be greatly reduced.
  • FIG. 4 is a conceptual view showing an epitaxial wafer according to an exemplary embodiment of the present invention.
  • the epitaxial wafer according to the exemplary embodiment of the present invention includes a substrate 100 and an epitaxial structure 200 formed on the substrate 100 .
  • the substrate 100 may include a silicon carbide based wafer and the epitaxial structure 200 may also include a silicon carbide structure.
  • the epitaxial structure 200 includes a first epitaxial layer 210 formed on the substrate 100 and a second epitaxial layer 220 formed on the first epitaxial layer 210 .
  • the first epitaxial layer 210 is formed on the substrate 100 by the above-described pre-growth step, and thus may serve to reduce a leakage current when a voltage is applied.
  • the first epitaxial layer 210 may have a thickness in a range of 1 ⁇ m or less.
  • the second epitaxial layer 220 may be fabricated to have a target thickness and to have surface defect density in a range of 0.5 cm 2 or less by the subsequent growth step.
  • both the first epitaxial layer 210 and the second epitaxial layer 220 may include N-type conductive silicon carbide series. That is, when the substrate 100 includes silicon carbide (SiC), the first epitaxial layer 210 and the second epitaxial layer 220 may be formed of silicon carbide nitride (SiCN).
  • both the first epitaxial layer 210 and the second epitaxial layer 220 may include P-type conductive silicon carbide series.
  • the first epitaxial layer 210 and the second epitaxial layer 220 may be formed of aluminum silicon carbide (AlSiC).
  • the above-described epitaxial wafer may be applied to a metal-semiconductor field effect transistor (MESFET).
  • MESFET metal-semiconductor field effect transistor
  • an ohmic contact layer including a source and a drain is formed on the second epitaxial layer 220 according to the exemplary embodiment of the present invention, and thus the MESFET may be fabricated.
  • the epitaxial wafer may be applied to various semiconductor devices.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
US14/406,070 2012-10-31 2013-10-29 Epitaxial wafer and method for fabricating the same Active US9873954B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2012-0122007 2012-10-31
KR1020120122007A KR20140055338A (ko) 2012-10-31 2012-10-31 에피택셜 웨이퍼 및 그 제조 방법
PCT/KR2013/009645 WO2014069859A1 (fr) 2012-10-31 2013-10-29 Plaquette épitaxiale et son procédé de fabrication

Publications (2)

Publication Number Publication Date
US20150259828A1 US20150259828A1 (en) 2015-09-17
US9873954B2 true US9873954B2 (en) 2018-01-23

Family

ID=50627696

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/406,070 Active US9873954B2 (en) 2012-10-31 2013-10-29 Epitaxial wafer and method for fabricating the same

Country Status (4)

Country Link
US (1) US9873954B2 (fr)
KR (1) KR20140055338A (fr)
CN (1) CN104584190B (fr)
WO (1) WO2014069859A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899489B2 (en) * 2015-02-13 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical gate all around (VGAA) devices and methods of manufacturing the same
JP6613190B2 (ja) * 2016-03-28 2019-11-27 Ｋｙｂ株式会社 緩衝器
JP6372709B2 (ja) * 2016-04-20 2018-08-15 信越半導体株式会社 エピタキシャルウェーハの製造方法
KR102417484B1 (ko) * 2017-09-05 2022-07-05 주식회사 엘엑스세미콘 에피택셜 웨이퍼 및 그 제조 방법
CN107829135A (zh) * 2017-10-24 2018-03-23 瀚天天成电子科技（厦门）有限公司 一种高质量碳化硅外延生长工艺
CN113094866B (zh) * 2021-02-25 2022-08-26 全芯智造技术有限公司 半导体工艺的仿真方法
US11757036B2 (en) * 2021-07-29 2023-09-12 International Business Machines Corporation Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devices
CN114566571B (zh) * 2022-04-24 2022-07-26 江苏第三代半导体研究院有限公司 基于温度补偿的半导体外延片的制备方法及半导体外延片

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
KR19990016925A (ko) 1997-08-20 1999-03-15 윤종용 ＧａＮ 단결정 제조 방법
US6198141B1 (en) * 1996-08-13 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US20020025660A1 (en) * 1999-07-14 2002-02-28 Seh-America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
US6734461B1 (en) * 1999-09-07 2004-05-11 Sixon Inc. SiC wafer, SiC semiconductor device, and production method of SiC wafer
US20070072398A1 (en) * 2005-09-29 2007-03-29 Denso Corporation Method for manufacturing semiconductor device and epitaxial growth equipment
JP2007119273A (ja) 2005-10-26 2007-05-17 Matsushita Electric Ind Co Ltd 炭化珪素単結晶の成長方法
KR20080102065A (ko) 2007-05-18 2008-11-24 삼성전자주식회사 에피택시얼 실리콘 구조물 형성 방법 및 이를 이용한 반도체 소자의 형성 방법
US20090155947A1 (en) * 2007-12-14 2009-06-18 Samsung Electro-Mechanics Co., Ltd. Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same
US20090302328A1 (en) * 2008-06-04 2009-12-10 Hitachi Cable, Ltd. Silicon carbide semiconductor substrate and method of manufacturing the same
US20100119849A1 (en) 2007-07-26 2010-05-13 Nobuhiko Nakamura Sic epitaxial substrate and method for producing the same
JP2010225733A (ja) 2009-03-23 2010-10-07 Seiko Epson Corp 半導体基板の製造方法
US20100252834A1 (en) * 2009-04-06 2010-10-07 National Chiao Tung University Method for growing group iii-v nitride film and structure thereof
US20110059003A1 (en) * 2009-09-04 2011-03-10 University Of South Carolina Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
US20110312161A1 (en) * 2009-03-05 2011-12-22 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102534769B (zh) * 2012-03-21 2015-01-28 中国科学院半导体研究所 在图形衬底上生长氮化镓外延结构的方法

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
US6198141B1 (en) * 1996-08-13 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
KR19990016925A (ko) 1997-08-20 1999-03-15 윤종용 ＧａＮ 단결정 제조 방법
US20020025660A1 (en) * 1999-07-14 2002-02-28 Seh-America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
US6734461B1 (en) * 1999-09-07 2004-05-11 Sixon Inc. SiC wafer, SiC semiconductor device, and production method of SiC wafer
US20070072398A1 (en) * 2005-09-29 2007-03-29 Denso Corporation Method for manufacturing semiconductor device and epitaxial growth equipment
JP2007119273A (ja) 2005-10-26 2007-05-17 Matsushita Electric Ind Co Ltd 炭化珪素単結晶の成長方法
KR20080102065A (ko) 2007-05-18 2008-11-24 삼성전자주식회사 에피택시얼 실리콘 구조물 형성 방법 및 이를 이용한 반도체 소자의 형성 방법
US20100119849A1 (en) 2007-07-26 2010-05-13 Nobuhiko Nakamura Sic epitaxial substrate and method for producing the same
US20090155947A1 (en) * 2007-12-14 2009-06-18 Samsung Electro-Mechanics Co., Ltd. Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same
US20090302328A1 (en) * 2008-06-04 2009-12-10 Hitachi Cable, Ltd. Silicon carbide semiconductor substrate and method of manufacturing the same
US20110312161A1 (en) * 2009-03-05 2011-12-22 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device
JP2010225733A (ja) 2009-03-23 2010-10-07 Seiko Epson Corp 半導体基板の製造方法
US20100252834A1 (en) * 2009-04-06 2010-10-07 National Chiao Tung University Method for growing group iii-v nitride film and structure thereof
US20110059003A1 (en) * 2009-09-04 2011-03-10 University Of South Carolina Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Search Report for International Application No. PCT/KR2013/009645.

Also Published As

Publication number Publication date
US20150259828A1 (en) 2015-09-17
WO2014069859A1 (fr) 2014-05-08
KR20140055338A (ko) 2014-05-09
CN104584190B (zh) 2017-06-27
CN104584190A (zh) 2015-04-29

Similar Documents

Publication Publication Date Title
US9873954B2 (en) Epitaxial wafer and method for fabricating the same
TWI707975B (zh) 半導體元件用磊晶基板、半導體元件以及半導體元件用磊晶基板之製造方法
EP2728609B1 (fr) Procédé de fabrication de tranche épitaxiale
US20080079008A1 (en) Silicon carbide semiconductor device and method for manufacturing the same
US9633840B2 (en) Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device
EP2728610A1 (fr) Tranche épitaxiale, procédé de fabrication de la plaquette et dispositif semi-conducteur comprenant la tranche
CN103578986A (zh) 一种高阻GaN薄膜的制备方法
US20170154986A1 (en) Stress control on thin silicon substrates
WO2018034840A1 (fr) Croissance de matériau semi-conducteur d'une couche tampon de nitrure à haute résistivité à l'aide d'une implantation ionique
WO2018185850A1 (fr) Procédé de fabrication de plaquette épitaxiale de carbure de silicium et procédé de fabrication de dispositif à semi-conducteur au carbure de silicium
US11183385B2 (en) Method for passivating silicon carbide epitaxial layer
KR20140137795A (ko) 에피택셜 웨이퍼
CN112522781B (zh) 碳化硅衬底上的缓冲层及其形成方法
Kim et al. Investigation of fast and slow traps in atomic layer deposited AlN on 4H-SiC
Feng et al. SiC based Si/SiC heterojunction and its rectifying characteristics
KR20140055337A (ko) 에피택셜 웨이퍼 및 그 제조 방법
KR102474331B1 (ko) 에피택셜 웨이퍼 및 그 제조 방법
KR20140055336A (ko) 에피택셜 웨이퍼 및 그 제조 방법
CN105002563B (zh) 碳化硅外延层区域掺杂的方法
KR20140055335A (ko) 에피택셜 웨이퍼 및 그 제조 방법
KR102583794B1 (ko) 핵형성 층 증착 방법
Wang et al. Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures
Dong et al. Low donor ionization energy in Si-implanted heteroepitaxial AlN
CN108699726B (zh) 由碳化硅构成的半导体基板及其制造方法
KR102119755B1 (ko) 에피택셜 웨이퍼 및 그 제조 방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: LG INNOTEK CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KANG, SEOKMIN;REEL/FRAME:034434/0258

Effective date: 20141128

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

AS Assignment

Owner name: LX SEMICON CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LG INNOTEK CO., LTD.;REEL/FRAME:057870/0519

Effective date: 20211021