US9401293B2 - Polishing apparatus and polishing method - Google Patents

Polishing apparatus and polishing method Download PDF

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US9401293B2
US9401293B2 US13/330,881 US201113330881A US9401293B2 US 9401293 B2 US9401293 B2 US 9401293B2 US 201113330881 A US201113330881 A US 201113330881A US 9401293 B2 US9401293 B2 US 9401293B2
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substrate
optical head
polishing table
polishing
light
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US20120164917A1 (en
Inventor
Itsuki Kobata
Yoichi Kobayashi
Katsutoshi Ono
Masaki Kinoshita
Toshifumi Kimba
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Ebara Corp
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Ebara Corp
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Assigned to EBARA CORPORATION reassignment EBARA CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIMBA, TOSHIFUMI, KINOSHITA, MASAKI, KOBATA, ITSUKI, KOBAYASHI, YOICHI, ONO, KATSUTOSHI
Publication of US20120164917A1 publication Critical patent/US20120164917A1/en
Priority to US14/808,252 priority Critical patent/US9969048B2/en
Priority to US15/215,343 priority patent/US20160325399A1/en
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Priority to US15/949,960 priority patent/US10343255B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Definitions

  • the present invention relates to a polishing apparatus for polishing a surface of a substrate, such as a semiconductor wafer, and more specifically to a polishing apparatus and a polishing method which obtain a film-thickness distribution over the entire substrate surface including a central portion and a peripheral portion thereof during polishing of the substrate and control a load on the substrate based on the film-thickness distribution.
  • a CMP (chemical mechanical polishing) apparatus is widely known as equipment for polishing a surface of a substrate, such as a semiconductor wafer.
  • This CMP apparatus polishes the surface of the substrate by pressing the substrate against a polishing pad on a rotating polishing table while supplying a polishing liquid onto the polishing pad.
  • the CMP apparatus typically has a film-thickness measuring device for measuring a film thickness or a signal equivalent to the film thickness.
  • the CMP apparatus having such a film-thickness measuring device controls a polishing load on the substrate based on a measured value of the film thickness obtained from the film-thickness measuring device and to determine a polishing end point.
  • An eddy current sensor or an optical sensor is generally used as the film-thickness measuring device.
  • FIG. 1 is a plan view showing a positional relationship between film-thickness measuring device of a conventional CMP apparatus and substrate.
  • a film-thickness measuring device 100 is provided in a polishing table 102 so as to face a substrate W on a polishing pad 105 .
  • the film-thickness measuring device 100 measures the film thickness at multiple measuring points on the substrate W while moving across the substrate W each time the polishing table 102 rotates.
  • the film-thickness measuring device 100 is arranged so as to pass through the center of the substrate W, as shown in FIG. 1 . This is for the purpose of measuring the film thickness at multiple measuring points distributed in a radial direction of the substrate W, as shown in FIG. 2 .
  • circuit patterns on the surface of the substrate to be polished. In some regions on the substrate, the existence of such circuit patterns could cause a difference in obtained data indicating the film thickness (e.g., voltage value or current value in the case of using the eddy current sensor, relative reflectance in the case of using the optical sensor) even when the film thickness is the same. Thus, in order to avoid such an influence of the circuit patterns, smoothing is performed on the data.
  • the film thickness e.g., voltage value or current value in the case of using the eddy current sensor, relative reflectance in the case of using the optical sensor
  • the CMP apparatus determines the polishing loads on multiple regions (e.g., a central portion, an intermediate portion, a peripheral portion) of the substrate based on a film-thickness profile obtained during polishing and polishes the substrate so as to make the film thickness uniform.
  • regions e.g., a central portion, an intermediate portion, a peripheral portion
  • an accurate film thickness cannot be obtained in the peripheral portion of the substrate because of the smaller number of measuring points on this portion. This problem will be explained with reference to FIG. 2 .
  • FIG. 2 is a view showing measuring points on the substrate at which film-thickness measurement is performed while the polishing table makes one revolution.
  • the peripheral portion of the substrate is an outermost annular portion having a width ranging from 10 mm to 20 mm. Because of its narrow width, the number of measuring points on the peripheral portion is small, as can be seen from FIG. 2 .
  • the peripheral portion of the substrate is most likely to be affected by the polishing load and the polishing liquid, and therefore the film thickness is likely to vary greatly during polishing as compared with other regions. Moreover, an initial film thickness in the peripheral portion of the substrate is, in many cases, larger than that in other regions. Thus, it is necessary to accurately measure and monitor the film thickness in the peripheral portion during polishing of the substrate. However, as described above, it is difficult to obtain an accurate film thickness in the peripheral portion because of the smaller number of measuring points on this portion.
  • FIG. 3 is a graph showing a change in the measured value of the film thickness in the central portion of the substrate and a change in the measured value of the film thickness in the peripheral portion of the substrate.
  • a vertical axis represents measured value (estimated value) of the film thickness obtained by the optical sensor
  • a horizontal axis represents polishing time.
  • the film thickness in the central portion (see FIG. 2 ) of the substrate decreases gradually with the polishing time, while the film thickness in the peripheral portion (see FIG. 2 ) varies irregularly. This is because the small number of measuring points in the peripheral portion cannot provide sufficient data for the smoothing. In particular, when the polishing table rotates at a high speed, the number of measuring points in the peripheral portion becomes even smaller.
  • the present invention has been made in view of the above drawback. It is therefore an object of the present invention to provide a polishing apparatus and a polishing method capable of obtaining highly-accurate film-thickness data over a substrate surface in its entirety including a central portion and a peripheral portion.
  • One aspect of the present invention for achieving the above object is to provide an apparatus for polishing a substrate having a film thereon by bringing the substrate into sliding contact with a polishing pad.
  • the apparatus includes: a rotatable polishing table for holding the polishing pad; a top ring configured to hold the substrate and to press a surface of the substrate against the polishing pad; at least one light source configured to emit light; a first optical head configured to apply the light to the surface of the substrate and to receive reflected light from the substrate; a second optical head configured to apply the light to the surface of the substrate and to receive reflected light from the substrate; at least one spectroscope configured to measure at each wavelength an intensity of the reflected light received by the first optical head and the second optical head; and a processor configured to produce a spectrum from the intensity of the reflected light at each wavelength measured by the spectroscope and to determine a thickness of the film of the substrate from the spectrum produced.
  • the spectrum indicates a relationship between intensity and wavelength of the reflected light.
  • the first optical head is arranged so as to face a center of the substrate held by the top ring, and the second optical head is arranged so as to face a peripheral portion of the substrate held by the top ring.
  • the second optical head is located outwardly of the first optical head with respect to a radial direction of the polishing table.
  • the second optical head is located inwardly of the first optical head with respect to a radial direction of the polishing table.
  • the first optical head and the second optical head are located at different positions with respect to a circumferential direction of the polishing table.
  • a line connecting the first optical head to the center of the polishing table and a line connecting the second optical head to the center of the polishing table meet at an angle of substantially 180 degrees.
  • the second optical head is located outwardly of the polishing table.
  • the apparatus further includes a controller for determining load on the substrate.
  • the top ring has a mechanism configured to press a central portion and the peripheral portion of the substrate independently against the polishing pad, and the controller is configured to determine loads of the top ring on the central portion and the peripheral portion based on a film thickness at the central portion and a film thickness at the peripheral portion.
  • the apparatus include: a rotatable polishing table for holding the polishing pad; a top ring configured to hold the substrate and to press a surface of the substrate against the polishing pad; and a first film-thickness sensor and a second film-thickness sensor each configured to measure a thickness of the film of the substrate.
  • the first film-thickness sensor is arranged so as to face a center of the substrate held by the top ring, and the second film-thickness sensor is arranged so as to face a peripheral portion of the substrate held by the top ring.
  • Still another aspect of the present invention is to provide a method of polishing a substrate having a film thereon by bringing the substrate into sliding contact with a polishing pad.
  • the method includes: rotating a polishing table holding the polishing pad; pressing a surface of the substrate against the rotating polishing pad; applying light to the surface of the substrate from a first optical head arranged so as to face a center of the substrate and receiving reflected light from the substrate by the first optical head; applying light to the surface of the substrate from a second optical head arranged so as to face a peripheral portion of the substrate and receiving reflected light from the substrate by the second optical head; measuring at each wavelength an intensity of the reflected light received by the first optical head and the second optical head; producing a spectrum from the measured intensity, the spectrum indicating a relationship between intensity and wavelength of the reflected light; and determining a thickness of the film of the substrate from the spectrum.
  • the first optical head and the second optical head apply the light to the surface of the substrate and receive the reflected light from the substrate at different times.
  • the first optical head and the second optical head apply the light to the surface of the substrate and receive the reflected light from the substrate alternately at substantially constant time intervals.
  • the peripheral portion of the substrate is an outermost annular portion of the substrate, and a width of the peripheral portion is in a range of 10 mm to 20 mm.
  • the tip of the second optical head moves along the peripheral portion of the substrate with the rotation of the polishing table. Therefore, the number of measuring points on the peripheral portion is increased, so that more highly accurate film thickness can be obtained.
  • a highly-accurate film-thickness profile i.e., a film-thickness distribution along the radial direction of the substrate
  • a desired film-thickness profile can be obtained based on the created film-thickness profile.
  • FIG. 1 is a plan view showing a positional relationship between film-thickness measuring device of a conventional CMP apparatus and substrate;
  • FIG. 2 is a view showing measuring points on the substrate at which film-thickness measurement is performed while a polishing table makes one revolution;
  • FIG. 3 is a graph showing a change in measured value of the film thickness in a central portion of the substrate and a change in measured value of the film thickness in a peripheral portion of the substrate;
  • FIG. 4A is a schematic view showing the principle of determining a film thickness based on a spectrum of a reflected light from a substrate
  • FIG. 4B is a plan view showing a positional relationship between the substrate and a polishing table
  • FIG. 5 is a graph showing spectra of the reflected light obtained by performing a polishing simulation on the substrate shown in FIG. 4A based on the theory of interference of light;
  • FIG. 6 is a cross-sectional view schematically showing a polishing apparatus according to an embodiment of the present invention.
  • FIG. 7 is a plan view showing arrangement of a first optical head having a first light-applying unit and a first light-receiving unit and a second optical head having a second light-applying unit and a second light-receiving unit;
  • FIG. 8 is a view showing paths of a tip of the second optical head described on a surface of the substrate
  • FIG. 9 is an example of a film-thickness profile produced by a processor
  • FIG. 10 is a cross-sectional view showing an example of a top ring having a pressing mechanism for pressing plural regions of the substrate independently;
  • FIG. 11 is a diagram showing film-thickness profiles
  • FIG. 12 is a plan view showing another example of arrangement of the first optical head and the second optical head
  • FIG. 13 is a view showing paths of the tip of the second optical head shown in FIG. 12 ;
  • FIG. 14 is a plan view showing still another example of arrangement of the first optical head and the second optical head
  • FIG. 15 is a view showing an example in which a common spectroscope and a common light source are provided for the first optical head and the second optical head;
  • FIG. 16 is a plan view showing still another example of arrangement of the first optical head and the second optical head
  • FIG. 17 is a plan view showing still another example of arrangement of the first optical head and the second optical head
  • FIG. 18 is a plan view showing still another example of arrangement of the first optical head and the second optical head
  • FIG. 19 is a plan view showing an example in which a third optical head is provided in addition to the first optical head and the second optical head;
  • FIG. 20 is a plan view showing another example of arrangement of the first optical head, the second optical head, and the third optical head;
  • FIG. 21 is a plan view showing still another example of arrangement of the first optical head, the second optical head, and the third optical head;
  • FIG. 22 is a plan view showing still another example of arrangement of the first optical head, the second optical head, and the third optical head;
  • FIG. 23 is a plan view showing another example of arrangement of the second optical head
  • FIG. 24 is a plan view showing still another example of arrangement of the second optical head.
  • FIG. 25 is a cross-sectional view showing a modified example of the polishing apparatus shown in FIG. 6 .
  • FIG. 4A is a schematic view showing the principle of determining a film thickness based on a spectrum of a reflected light from a substrate
  • FIG. 4B is a plan view showing a positional relationship between the substrate and a polishing table.
  • a substrate W to be polished, has an underlying layer (e.g., a silicon layer) and a film (e.g., a dielectric film, such as SiO 2 , having a property of light permeability) formed on the underlying layer.
  • a surface of the substrate W is pressed against a polishing pad 22 on a rotating polishing table 20 , so that the film of the substrate W is polished by sliding contact with the polishing pad 22 .
  • a light-applying unit 11 and a light-receiving unit 12 are arranged so as to face the surface of the substrate W.
  • the light-applying unit 11 is coupled to a light source 16 , and light emitted by the light source 16 is directed to the surface of the substrate W by the light-applying unit 11 .
  • the light-applying unit 11 applies the light in a direction substantially perpendicular to the surface of the substrate W, and the light-receiving unit 12 receives the reflected light from the substrate W.
  • the light emitted by the light source 16 is multiwavelength light. As shown in FIG. 4B , the light is applied to the surface of the substrate W each time the polishing table 20 makes one revolution.
  • a spectroscope 14 is coupled to the light-receiving unit 12 . This spectroscope 14 is configured to disperse the reflected light according to wavelength and to measure the intensity of the reflected light at each wavelength.
  • a processor 15 is coupled to the spectroscope 14 .
  • This processor 15 is configured to read measurement data obtained by the spectroscope 14 and to produce intensity distribution of the reflected light from the measured values of the light intensity. More specifically, the processor 15 produces a spectrum (spectral profile) which indicates the light intensity at each of the wavelengths. This spectrum is expressed as a line graph indicating a relationship between wavelength and intensity of the reflected light.
  • the processor 15 is further configured to determine the film thickness of the substrate W from the spectrum and to determine a polishing end point.
  • a general-purpose computer or a dedicated computer can be used as the processor 15 .
  • the processor 15 performs predetermined processing steps according to a program (or computer software).
  • FIG. 5 is a graph showing spectra of the reflected light obtained by performing a polishing simulation on the substrate shown in FIG. 4A based on the theory of interference of light.
  • a horizontal axis represents wavelength of light
  • a vertical axis represents relative reflectance derived from the intensity of the light.
  • the relative reflectance is an index that indicates the intensity of light. More specifically, the relative reflectance is a ratio of the intensity of the reflected light to a predetermined reference intensity. By dividing the intensity of the reflected light (i.e., the actually measured intensity) by the predetermined reference intensity, noise components are removed and therefore intensity of the light with no noise can be obtained.
  • the predetermined reference intensity may be an intensity of the reflected light obtained when polishing a silicon wafer with no film thereon in the presence of water. Instead of the relative reflectance, the intensity of the light may be used as it is.
  • the spectrum is an arrangement of the light intensity in the order of wavelength and indicates the light intensity at each wavelength.
  • the spectrum varies depending on the film thickness. This phenomenon is due to interference between light waves. Specifically, the light, applied to the substrate, is reflected off an interface between a medium (e.g., water) and the film and an interface between the film and the underlying layer beneath the film. The light waves from these interfaces interfere with each other. The manner of interference between the light waves varies according to the thickness of the film (i.e., a length of an optical path). As a result, the spectrum of the reflected light from the substrate varies depending on the thickness of the film, as shown in FIG. 5 .
  • a medium e.g., water
  • the processor 15 determines the film thickness from the spectrum obtained.
  • a known technique can be used for determining the film thickness from the spectrum. For example, there is a method of estimating a film thickness by comparing a spectrum obtained during polishing (i.e., an actually measured spectrum) with prepared reference spectra, as disclosed in Japanese laid-open patent publication No. 2009-505847. This method includes the steps of comparing the spectrum at each point of time during polishing with the plural reference spectra and determining a film thickness from a reference spectrum whose shape is most similar to the shape of the measured spectrum.
  • the plural reference spectra are prepared in advance by polishing a substrate that is identical or similar to the substrate to be polished. Each reference spectrum is associated with a film thickness at a point of time when that reference spectrum is obtained. Therefore, the current film thickness can be estimated from the reference spectrum having a shape that is most similar to that of the spectrum obtained during polishing.
  • the processor 15 is coupled to a controller 19 for determining polishing conditions, such as a polishing load on the substrate.
  • the spectrum created by the processor 15 is sent to the controller 19 , which then determines an optimum polishing load for achieving a target film-thickness profile based on the spectrum obtained during polishing and controls the polishing load on the substrate, as will be described later.
  • FIG. 6 is a cross-sectional view schematically showing a polishing apparatus according to an embodiment of the present invention.
  • the polishing apparatus includes the polishing table 20 for supporting the polishing pad 22 thereon, a top ring 24 configured to hold the substrate W and to press the substrate W against the polishing pad 22 , and a polishing liquid supply mechanism 25 configured to supply a polishing liquid (slurry) onto the polishing pad 22 .
  • the polishing table 20 is coupled to a motor (not shown in the drawing) provided below the polishing table 20 , so that the polishing table 20 can rotate about its own axis.
  • the polishing pad 22 is secured to an upper surface of the polishing table 20 .
  • the polishing pad 22 has an upper surface 22 a , which provides a polishing surface for polishing the substrate W.
  • the top ring 24 is coupled to a motor and an elevating cylinder (not shown in the drawing) via a top ring shaft 28 . With these configurations, the top ring 24 can move in the vertical direction and can rotate about the top ring shaft 28 .
  • the top ring 24 has a lower surface which is configured to hold the substrate W by a vacuum suction or the like.
  • the substrate W held on the lower surface of the top ring 24 , is rotated by the top ring 24 , and is pressed by the top ring 24 against the polishing pad 22 on the rotating polishing table 20 .
  • the polishing liquid is supplied onto the polishing surface 22 a of the polishing pad 22 from the polishing liquid supply mechanism 25 .
  • the surface of the substrate W is polished in the presence of the polishing liquid between the surface of the substrate W and the polishing pad 22 .
  • a relative movement mechanism for providing sliding contact between the substrate W and the polishing pad 22 is constructed by the polishing table 20 and the top ring 24 .
  • the polishing table 20 has holes 30 A and 30 B whose upper ends lying in the upper surface of the polishing table 20 .
  • the polishing pad 22 has through-holes 31 A and 31 B at positions corresponding to the holes 30 A and 30 B, respectively.
  • the hole 30 A and the through-hole 31 A are in fluid communication with each other, and the hole 30 B and the through-hole 31 B are in fluid communication with each other.
  • Upper ends of the through-holes 31 A and 31 B lie in the polishing surface 22 a .
  • the holes 30 A and 30 B are coupled to a liquid supply source 35 via a liquid supply passage 33 and a rotary joint 32 .
  • the liquid supply source 35 supplies water (preferably pure water) as a transparent liquid into the holes 30 A and 30 B.
  • the water fills spaces formed by the lower surface of the substrate W and the through-holes 31 A and 31 B, and is expelled therefrom through a liquid discharge passage 34 .
  • the polishing liquid in the through-holes 31 A and 31 B is discharged together with the water and thus a path of the light is secured.
  • the liquid supply passage 33 is provided with a valve (not shown in the drawing) configured to operate in conjunction with the rotation of the polishing table 20 . The valve operates so as to stop the flow of the water or reduce the flow of the water when the substrate W is not located over the through-holes 31 A and 31 B.
  • the polishing apparatus has an optical film-thickness measuring device for measuring the film thickness according to the above-described method.
  • This optical film-thickness measuring device includes light sources 16 a and 16 b for emitting light, a first light-applying unit 11 a configured to direct the light, emitted by the light source 16 a , to the surface of the substrate W, a first light-receiving unit 12 a configured to receive the reflected light from the substrate W, a second light-applying unit 11 b configured to direct the light, emitted by the light source 16 b , to the surface of the substrate W, a second light-receiving unit 12 b configured to receive the reflected light from the substrate W, spectroscopes 14 a and 14 b configured to disperse (or break) the reflected light according to the wavelength and to measure the intensity of the reflected light over a predetermined wavelength range, and the processor 15 configured to produce the spectrum from the measurement data obtained by the spectroscopes 14 a and
  • the first light-applying unit 11 a , the first light-receiving unit 12 a , the second light-applying unit 11 b , and the second light-receiving unit 12 b are each constructed by optical fiber.
  • the first light-applying unit 11 a and the first light-receiving unit 12 a constitute a first optical head (i.e., an optical film-thickness measuring head) 13 A
  • the second light-applying unit 11 b and the second light-receiving unit 12 b constitute a second optical head (i.e., an optical film-thickness measuring head) 13 B.
  • the first light-applying unit 11 a is coupled to the light source 16 a
  • the second light-applying unit 11 b is coupled to the light source 16 b
  • the first light-receiving unit 12 a is coupled to the spectroscope 14 a
  • the second light-receiving unit 12 b is coupled to the spectroscope 14 b.
  • a light emitting diode (LED), a halogen lamp, a xenon flash lamp, or the like, which emits multi-wavelength light, can be used for the light sources 16 a and 16 b .
  • the first light-applying unit 11 a , the first light-receiving unit 12 a , the second light-applying unit 11 b , the second light-receiving unit 12 b , the light sources 16 a and 16 b , and the spectroscopes 14 a and 14 b are provided in the polishing table 20 and are rotated together with the polishing table 20 .
  • the first light-applying unit 11 a and the first light-receiving unit 12 a are located in the hole 30 A formed in the polishing table 20 , and tips of the first light-applying unit 11 a and the first light-receiving unit 12 a are adjacent to the surface, to be polished, of the substrate W.
  • the second light-applying unit 11 b and the second light-receiving unit 12 b are located in the hole 30 B formed in the polishing table 20 , and tips of the second light-applying unit 11 b and the second light-receiving unit 12 b are adjacent to the surface, to be polished, of the substrate W.
  • the first light-applying unit 11 a and the first light-receiving unit 12 a are arranged perpendicularly to the surface of the substrate W, so that the first light-applying unit 11 a applies the light to the surface of the substrate W perpendicularly.
  • the second light-applying unit 11 b and the second light-receiving unit 12 b are arranged perpendicularly to the surface of the substrate W, so that the second light-applying unit 11 b applies the light to the surface of the substrate W perpendicularly.
  • the first light-applying unit 11 a and the first light-receiving unit 12 a are arranged so as to face the center of the substrate W held by the top ring 24 . Therefore, as shown in FIG. 4B , each time the polishing table 20 rotates, the tips of the first light-applying unit 11 a and the first light-receiving unit 12 a move across the substrate W and the light is applied to regions including the center of the substrate W. This is for the purpose of measuring the film thickness over the entire surface of the substrate W, including a central portion of the substrate W, through the first light-applying unit 11 a and the first light-receiving unit 12 a passing through the center of the substrate W.
  • the processor 15 can therefore produce a film-thickness profile (i.e., a film-thickness distribution) based on the film thickness data measured.
  • the second light-applying unit 11 b and the second light-receiving unit 12 b are arranged so as to face a peripheral portion of the substrate W held by the top ring 24 .
  • the tips of the second light-applying unit 11 b and the second light-receiving unit 12 b move along the peripheral portion of the substrate W each time the polishing table 20 rotates. Therefore, the light is applied to the peripheral portion of the substrate W each time the polishing table 20 rotates.
  • the substrate W is irradiated with the light from the first light-applying unit 11 a and the second light-applying unit 11 b .
  • the light from the first light-applying unit 11 a is reflected off the surface of the substrate W, and the reflected light is received by the first light-receiving unit 12 a .
  • the light from the second light-applying unit 11 b is reflected off the surface of the substrate W, and the reflected light is received by the second light-receiving unit 12 b .
  • the water is supplied into the hole 30 A and the through-hole 31 A, so that the space formed between the surface of the substrate W and the respective tips of the first light-applying unit 11 a and first light-receiving unit 12 a is filled with the water.
  • the water is supplied into the hole 30 B and the through-hole 31 B, so that the space formed between the surface of the substrate W and the respective tips of the second light-applying unit 11 b and second light-receiving unit 12 b is filled with the water.
  • the spectroscope 14 a is configured to disperse the reflected light sent from the first light-receiving unit 12 a according to wavelength and to measure the intensity of the reflected light at each wavelength.
  • the spectroscope 14 b is configured to disperse the reflected light sent from the second light-receiving unit 12 b according to wavelength and to measure the intensity of the reflected light at each wavelength.
  • the processor 15 creates the spectrum from the intensity of the reflected light measured by the spectroscope 14 a and the spectroscope 14 b .
  • the spectrum shows a relationship between the intensity and the wavelength of the reflected light.
  • the processor 15 determines the current film thickness of the substrate W using the previously-described known technique.
  • FIG. 7 is a plan view of arrangement of the first optical head 13 A having the first light-applying unit 11 a and the first light-receiving unit 12 a and the second optical head 13 B having the second light-applying unit 11 b and the second light-receiving unit 12 b .
  • the center of the substrate W is located on a path of the first optical head 13 A
  • the peripheral portion of the substrate W is located on a path of the second optical head 13 B.
  • the second optical head 13 B moves across only the peripheral portion of the substrate W and its travelling direction is approximately in the circumferential direction of the substrate W.
  • the first optical head 13 A and the second optical head 13 B are arranged along the radial direction of the polishing table 20 . Therefore, a line connecting the first optical head 13 A to the center O of the polishing table 20 and a line connecting the second optical head 13 B to the center O of the polishing table 20 meet at an angle of 0 degree.
  • the second optical head 13 B is located outwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 . Specifically, a distance between the second optical head 13 B and the center O of the polishing table 20 is longer than a distance between the first optical head 13 A and the center O of the polishing table 20 .
  • FIG. 8 is a view showing the paths of the tip of the second optical head 13 B described on the surface of the substrate W. More specifically, FIG. 8 shows the paths of the second optical head 13 B when the polishing table 20 makes two revolutions. As can be seen from FIG. 8 , the second optical head 13 B moves along the peripheral portion of the substrate W as the polishing table 20 rotates. As a result, the number of measuring points on the peripheral portion becomes larger than the number of measuring points shown in FIG. 2 in the conventional CMP apparatus. Therefore, the film thickness in the peripheral portion of the substrate W can be determined accurately from the larger number of measurement data.
  • the peripheral portion of the substrate is an outermost annular portion of the substrate, as shown in FIG. 8 , and a width thereof is in the range of 10 mm to 20 mm.
  • the width of the annular peripheral portion is about 10 mm.
  • the peripheral portion is a region where devices are formed.
  • the peripheral portion of the substrate is most likely to be affected by the polishing load and the polishing liquid during polishing, and therefore the film thickness is likely to vary greatly during polishing as compared with other regions. Therefore, highly-accurate monitoring of the film thickness is required during polishing.
  • the substrate W is polished by the sliding contact between the substrate W and the polishing pad 22 and by chemical action of the polishing liquid. Therefore, portions of the polishing pad 22 where the first optical head 13 A and the second optical head 13 B are provided do not contribute to polishing of the substrate W. As can be seen from FIG. 8 , the second optical head 13 B passes through only the peripheral portion of the substrate W and does not pass through other portions. Therefore, the influence of the second optical head 13 B on the substrate polishing can be minimized.
  • the polishing table 20 may rotate at a speed of 50 min ⁇ 1 or less during polishing of the substrate W.
  • the rotational speed of the polishing table 20 may be lowered to less than a preset rotational speed in predetermined time intervals during polishing of the substrate W.
  • the polishing liquid may affect the measurement of the film thickness.
  • the light may be blocked by the polishing liquid and as a result highly-accurate measurement may not be performed.
  • pure water may be supplied onto the polishing pad 22 regularly while the substrate is polished (i.e., water-polished) and the film thickness of the substrate may be measured during supply of the pure water.
  • the processer 15 produces the film-thickness profile from a combination of the film-thickness values obtained through the first optical head 13 A and the film-thickness values obtained through the second optical head 13 B.
  • FIG. 9 is an example of the film-thickness profile produced by the processor 15 . As shown in FIG. 9 , the film-thickness profile is composed of a large number of film-thickness values that have been determined by the processer 15 .
  • the film-thickness values (indicated by ⁇ ) obtained using the first optical head 13 A are allotted to portions other than the peripheral portion of the substrate W, and the film-thickness values (indicated by ⁇ ) obtained using the second optical head 13 B are allotted to the peripheral portion of the substrate W.
  • the film-thickness values obtained through the second optical head 13 B are used to create a part of the film-thickness profile corresponding to the peripheral portion of the substrate W. Therefore, the processer 15 can produce the highly-accurate film-thickness profile from the center to the peripheral portion of the substrate W.
  • the film-thickness profile is a film-thickness distribution that indicates a film thickness in each region of the substrate W.
  • a desired film-thickness profile or a desired polishing profile i.e., a profile indicating a distribution of amounts of film removed
  • the top ring 24 has a mechanism capable of independently pressing plural regions (including the central portion and the peripheral portion) of the substrate W. The top ring 24 having such a mechanism will be described below with reference to FIG. 10 .
  • FIG. 10 is a cross-sectional view showing an example of the top ring 24 having the pressing mechanism for pressing plural regions of the substrate independently.
  • the top ring 24 has a top ring body 51 coupled to the top ring shaft 28 via a universal joint 50 , and a retainer ring 52 provided on a lower portion of the top ring body 51 .
  • the top ring 24 further has a circular flexible membrane 56 to be brought into contact with the substrate W, and a chucking plate 57 that holds the membrane 56 .
  • the membrane 56 and the chucking plate 57 are disposed below the top ring body 51 .
  • Four pressure chambers (air bags) P 1 , P 2 , P 3 , and P 4 are provided between the membrane 56 and the chucking plate 57 .
  • the pressure chambers P 1 , P 2 , P 3 , and P 4 are formed by the membrane 56 and the chucking plate 57 .
  • the central pressure chamber P 1 has a circular shape, and the other pressure chambers P 2 , P 3 , and P 4 have an annular shape. These pressure chambers P 1 , P 2 , P 3 , and P 4 are in a concentric arrangement.
  • Pressurized fluid e.g., pressurized air
  • Pressurized fluid is supplied into the pressure chambers P 1 , P 2 , P 3 , and P 4 or vacuum is developed in the pressure chambers P 1 , P 2 , P 3 , and P 4 by a pressure-adjusting device 70 through fluid passages 61 , 62 , 63 , and 64 , respectively.
  • the pressures in the pressure chambers P 1 , P 2 , P 3 , and P 4 can be changed independently to thereby independently adjust loads on four regions of the substrate W: the central portion, an inner intermediate portion, an outer intermediate portion, and the peripheral portion. Further, by elevating or lowering the top ring 24 in its entirety, the retainer ring 52 can press the polishing pad 22 at a predetermined load.
  • a pressure chamber P 5 is formed between the chucking plate 57 and the top ring body 51 . Pressurized fluid is supplied into the pressure chamber P 5 or vacuum is developed in the pressure chamber P 5 by the pressure-adjusting device 70 through a fluid passage 65 . With this operation, the chucking plate 57 and the membrane 56 in their entirety can move up and down.
  • the retainer ring 52 is arranged around the substrate W so as to prevent the substrate W from coming off the top ring 24 during polishing.
  • the membrane 56 has an opening in a portion that forms the pressure chamber P 3 , so that the substrate W can be held by the top ring 24 via the vacuum suction by producing vacuum in the pressure chamber P 3 . Further, the substrate W can be released from the top ring 24 by supplying nitrogen gas or clean air into the pressure chamber P 3 .
  • the pressure-adjusting device 70 is coupled to the controller 19 .
  • the polishing loads on the respective portions of the substrate W i.e., the internal pressures of the pressure chambers P 1 , P 2 , P 3 , and P 4 , are determined by the controller 19 .
  • the controller 19 is coupled to the above-described processor 15 , and the film-thickness profile produced by the processor 15 is sent to the controller 19 .
  • the controller 19 controls the internal pressures of the pressure chambers P 1 , P 2 , P 3 , and P 4 through the pressure-adjusting device 70 .
  • the controller 19 determines target internal pressures of the pressure chambers P 1 , P 2 , P 3 , and P 4 such that the film-thickness profile obtained during polishing coincides with a target film-thickness profile, and sends command signals of the target internal pressures to the pressure-adjusting device 70 .
  • the pressure-adjusting device 70 then adjusts the internal pressures of the pressure chambers P 1 , P 2 , P 3 , and P 4 based on the command signals sent from the controller 19 .
  • the top ring 24 can press the respective portions of the substrate W at optimum loads, respectively.
  • the second optical head 13 B is arranged in a position corresponding to the pressure chamber P 4 .
  • FIG. 11 is a diagram showing a film-thickness profile at a polishing initial stage, a target film-thickness profile, a film-thickness profile when polishing a substrate while performing a feedback control of the polishing loads based on the film-thickness profile obtained during polishing, and a film-thickness profile when polishing a substrate without performing the feedback control.
  • the diagram of FIG. 11 shows polishing results of the substrate having an initial film-thickness profile in which the film in the peripheral portion is thicker than the film in the other portions. As can be seen from FIG.
  • the same type of substrate is polished under the same polishing conditions.
  • the polishing pad 22 and the retainer ring 52 of the top ring 24 which are consumables of the polishing apparatus, wear away gradually with the polishing time, the film-thickness profile obtained varies gradually even under the same conditions.
  • Such a variation in the film-thickness profile is remarkable particularly in the peripheral portion of the substrate. This is because the polishing load tends to concentrate on the peripheral portion of the substrate and this peripheral portion is likely to be subject to the influence of the wear of the retainer ring 52 and the polishing pad 22 .
  • polishing error due to the wear of the polishing pad 22 and/or the retainer ring 52 can be detected.
  • the wear of the polishing pad 22 and/or the retainer ring 52 can be detected based on a change with time in the film thickness in the peripheral portion of the substrate. For example, if a desired film thickness cannot be achieved even under the same polishing conditions, then it can be judged that the polishing pad 22 and/or the retainer ring 52 has worn away.
  • the film-thickness measurement data at the peripheral portion of the substrate can be used not only for the real-time feedback control of the polishing load on the substrate, but also for the wear detection of the consumables, such as the polishing pad 22 and the retainer ring 52 .
  • FIG. 12 is a plan view showing another example of arrangement of the first optical head 13 A and the second optical head 13 B.
  • the arrangement of the first optical head 13 A and the second optical head 13 B shown in FIG. 12 is basically the same as the arrangement shown in FIG. 7 , but differs in that the second optical head 13 B is closer to the center O of the polishing table 20 than the first optical head 13 A is.
  • the second optical head 13 B is located inwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 .
  • a distance between the second optical head 13 B and the center O of the polishing table 20 is shorter than a distance between the first optical head 13 A and the center O of the polishing table 20 .
  • FIG. 13 is a view showing paths of the second optical head 13 B shown in FIG. 12 , and more specifically shows the paths of the second optical head 13 B when the polishing table 20 makes two revolutions.
  • the second optical head 13 B moves along the peripheral portion of the substrate W as the polishing table 20 rotates. Therefore, the film thickness in the peripheral portion can be measured at more measuring points.
  • the path of the second optical head 13 B shown in FIG. 13 is longer than the path of the second optical head 13 B shown in FIG. 8 . Therefore, with the arrangement shown in FIG. 12 , the film thickness in the peripheral portion can be measured at more measuring points.
  • the path of the second optical head 13 B be short, from the standpoint of improvement of a polishing rate (i.e., a removal rate of the film). While the arrangement shown in FIG. 7 provides slightly less measuring points in the peripheral portion of the substrate W as compared with the arrangement shown in FIG. 12 , the arrangement shown in FIG. 7 is preferable from the standpoint of improvement of a polishing performance.
  • FIG. 14 is a plan view showing still another example of arrangement of the first optical head 13 A and the second optical head 13 B.
  • the first optical head 13 A and the second optical head 13 B are located at opposite sides with respect to the center O of the polishing table 20 . More specifically, a line connecting the first optical head 13 A to the center O of the polishing table 20 and a line connecting the second optical head 13 B to the center O of the polishing table 20 meet at an angle of substantially 180 degrees.
  • FIG. 14 shows a state in which the first optical head 13 A is facing the center of the substrate W (described by a solid line) and a state in which the second optical head 13 B is facing the peripheral portion of the substrate W (described by a dotted line).
  • the second optical head 13 B is located outwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 .
  • the first optical head 13 A and the second optical head 13 B apply the light to the substrate W and receive the light from the substrate W substantially simultaneously.
  • the first optical head 13 A and the second optical head 13 B apply the light to the substrate W and receive the light from the substrate W at different timings.
  • the film thickness at the central portion of the substrate W and the film thickness at the peripheral portion of the substrate W are measured at different times. Therefore, it is possible to use one spectroscope for receiving both the reflected light from the first optical head 13 A and the reflected light from the second optical head 13 B. That is, even if one spectroscope receives the reflected light from the central portion of the substrate W and the reflected light from the peripheral portion of the substrate W, these reflected lights are not superimposed in the spectroscope. Further, it is also possible to connect one light source to the first optical head 13 A and the second optical head 13 B selectively. Next, an example having a common spectroscope and a common light source will be described with reference to FIG. 15 .
  • the first light-applying unit 11 a and the second light-applying unit 11 b are coupled to a light source 16 through a first optical switch 40 A.
  • This first optical switch 40 A is configured to couple the light source 16 to one of the first light-applying unit 11 a and the second light-applying unit 11 b selectively.
  • the first light-receiving unit 12 a and the second light-receiving unit 12 b are coupled to a spectroscope 14 through a second optical switch 40 B.
  • the optical switch is a device for switching light-transmission route.
  • a typical type of optical switch has a mirror for changing a travelling direction of light and switches the light-transmission route by reflecting incident light.
  • a waveguide optical switch may be used.
  • This type of optical switch uses a material whose index of refraction varies upon input of heat or electricity.
  • These known optical switches can be used as the first optical switch 40 A and the second optical switch 40 B.
  • the light source 16 and the spectroscope 14 are coupled to the first light-applying unit 11 a and the first light-receiving unit 12 a by the optical switches 40 A and 40 B.
  • the second optical head 13 B moves across the substrate W, the light source 16 and the spectroscope 14 are coupled to the second light-applying unit 11 b and the second light-receiving unit 12 b by the optical switches 40 A and 40 B.
  • the optical switches 40 A and 40 B the light source 16 and the spectroscope 14 can be coupled to the first optical head 13 A or the second optical head 13 B alternately.
  • the first optical head 13 A and the second optical head 13 B are arranged at substantially equal intervals in a circumferential direction of the polishing table 20 , so that the first optical head 13 A and the second optical head 13 B apply the light to the substrate W and receive the reflected light from the substrate W alternately at substantially constant time intervals. Therefore, the processor 15 can secure a sufficient time for processing the measurement data (i.e., data containing measured values of the intensity of the reflected light) sent from the spectroscope 14 .
  • the measurement data i.e., data containing measured values of the intensity of the reflected light
  • the second optical head 13 B is arranged outwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 in the example of FIG. 14
  • the second optical head 13 B may be arranged inwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 as shown in FIG. 16 .
  • the line connecting the second optical head 13 B to the center O of the polishing table 20 may be shorter than the line connecting the first optical head 13 A to the center O of the polishing table 20 .
  • the same effects as in the examples shown in FIG. 14 and FIG. 15 can be obtained.
  • FIG. 17 is a plan view showing still another example of arrangement of the first optical head 13 A and the second optical head 13 B.
  • the first optical head 13 A and the second optical head 13 B are in alignment with each other.
  • the second optical head 13 B is arranged in a different position than a position of the first optical head 13 A with respect to the circumferential direction the polishing table 20 .
  • FIG. 17 shows a state in which the first optical head 13 A is facing the center of the substrate W (described by a solid line) and a state in which the second optical head 13 B is facing the peripheral portion of the substrate W (described by a dotted line).
  • the line connecting the first optical head 13 A to the center O of the polishing table 20 and the line connecting the second optical head 13 B to the center O of the polishing table 20 meet at an angle of about 120 degrees.
  • the film thickness at the central portion of the substrate W and the film thickness at the peripheral portion of the substrate W are measured at different times. Therefore, the single light source 16 and the single spectroscope 14 can be used for the first optical head 13 A and the second optical head 13 B selectively as shown in FIG. 15 .
  • the second optical head 13 B is arranged outwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 in the example of FIG. 17
  • the second optical head 13 B may be arranged inwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 as shown in FIG. 18 .
  • FIG. 19 is a plan view showing an example in which a third optical head 13 C is provided in addition to the first optical head 13 A and the second optical head 13 B.
  • the third optical head 13 C has the same structure as the above-discussed first optical head 13 A and the second optical head 13 B.
  • the third optical head 13 C is coupled to a light source and a spectroscope (not shown).
  • the first optical head 13 A, the second optical head 13 B, and the third optical head 13 C are arranged along the radial direction of the polishing table 20 .
  • the second optical head 13 B and the third optical head 13 C are located outwardly of the first optical head 13 A.
  • the arrangement of the first optical head 13 A and the second optical head 13 B is the same as the arrangement shown in FIG. 7 .
  • the third optical head 13 C is located in an intermediate point between the first optical head 13 A and the second optical head 13 B. Specifically, a distance between the first optical head 13 A and the third optical head 13 C is substantially the same as a distance between the third optical head 13 C and the second optical head 13 B.
  • the position of the third optical head 13 C corresponds to an intermediate portion located between the central portion and the peripheral portion of the substrate.
  • the second optical head 13 B is located in a position corresponding to the above-described pressure chamber P 4
  • the third optical head 13 C is located in a position corresponding to the above-described pressure chamber P 2 or the pressure chamber P 3 . Therefore, a more highly-accurate film-thickness profile can be obtained.
  • FIG. 20 is a plan view showing another example of arrangement of the first optical head 13 A, the second optical head 13 B, and the third optical head 13 C.
  • the arrangement shown in FIG. 20 is basically the same as the arrangement shown in FIG. 19 , but differs in that the second optical head 13 B and the third optical head 13 C are located inwardly of the first optical head 13 A with respect to the radial direction of the polishing table 20 .
  • the second optical head 13 B is located in a position corresponding to the peripheral portion of the substrate
  • the third optical head 13 C is located in a position corresponding to the intermediate portion located between the central portion and the peripheral portion of the substrate.
  • FIG. 21 is a modified example of the arrangement shown in FIG. 19
  • FIG. 22 is a view showing a modified example of the arrangement shown in FIG. 20 .
  • the third optical head 13 C may be located closer to the second optical head 13 B than to the first optical head 13 A. According to these arrangements, the film thickness of the intermediate portion near the peripheral portion of the substrate can be measured using the third optical head 13 C.
  • FIG. 23 is a plan view showing another example of arrangement of the second optical head 13 B.
  • the second optical head 13 B is arranged outwardly of the polishing table 20 .
  • the position of the first optical head 13 A is the same as in the above-discussed examples.
  • the position of the second optical head 13 B is fixed and is supported by a support member (not shown).
  • the second optical head 13 B does not rotate together with the polishing table 20 .
  • the top ring 24 (see FIG. 6 ) oscillates in the radial direction of the polishing table 20 during polishing as indicated by arrow S such that the peripheral portion of the substrate W protrudes from the polishing pad 22 on the polishing table 20 . Therefore, the second optical head 13 B can apply the light to the exposed peripheral portion of the substrate W and can receive the reflected light from the substrate W.
  • FIG. 24 is a plan view showing still another example of arrangement of the second optical head 13 B.
  • the second optical head 13 B is located at the center of the polishing table 20 .
  • the top ring 24 is configured to oscillate in the radial direction of the polishing table 20 as indicated by arrow T such that the peripheral portion of the substrate W is moved to the center of the polishing table 20 . Therefore, in this example also, the second optical head 13 B can apply the light to the peripheral portion of the substrate W and can receive the reflected light from the substrate W.
  • FIG. 25 is a cross-sectional view showing a modified example of the polishing apparatus shown in FIG. 6 .
  • the liquid supply passage, the liquid discharge passage, and the liquid supply source are not provided. Instead, transparent windows 45 A and 45 B are provided in the polishing pad 22 .
  • the light-applying units 11 a and 11 b direct the light to the surface of the substrate W on the polishing pad 22 through the transparent windows 45 A and 45 B, and the light-receiving units 12 a and 12 b receive the reflected light from the substrate W through the transparent windows 45 A and 45 B.
  • the other structures are the same as those of the polishing apparatus shown in FIG. 6 .
  • the transparent windows 45 A and 45 B can be applied to the examples shown in FIG. 7 through FIG. 24 .
  • the present invention is not limited to them.
  • Four or more optical heads may be provided so long as at least one optical head is arranged so as to face the peripheral portion of the substrate.
  • the present invention is not limited to the optical film-thickness measuring device, and can be applied to other type of film-thickness measuring device, such as eddy current sensor.
  • a first eddy current sensor film-thickness sensor
  • a second eddy current sensor may be arranged so as to face the peripheral portion of the substrate.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
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KR20180048490A (ko) 2018-05-10
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TWI729884B (zh) 2021-06-01
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JP2012138442A (ja) 2012-07-19
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US20180229346A1 (en) 2018-08-16
KR102025784B1 (ko) 2019-09-26
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US20160325399A1 (en) 2016-11-10
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TW201236098A (en) 2012-09-01
US9969048B2 (en) 2018-05-15
KR20190038772A (ko) 2019-04-09
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US10343255B2 (en) 2019-07-09
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US20120164917A1 (en) 2012-06-28
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