US9279176B2 - Lead wire for solar cell, manufacturing method and storage method thereof, and solar cell - Google Patents

Lead wire for solar cell, manufacturing method and storage method thereof, and solar cell Download PDF

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US9279176B2
US9279176B2 US12/998,727 US99872709A US9279176B2 US 9279176 B2 US9279176 B2 US 9279176B2 US 99872709 A US99872709 A US 99872709A US 9279176 B2 US9279176 B2 US 9279176B2
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solar cell
lead wire
strip
conductive material
solder
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US20110220196A1 (en
Inventor
Hajime Nishi
Yuju Endo
Ken Takahashi
Hiromitsu Kuroda
Hiroyuki Akutsu
Katsunori Sawahata
Hiroshi Bando
Iku Higashidani
Hiroshi Okikawa
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Proterial Ltd
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Hitachi Metals Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
    • C23C2/08—Tin or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/003—Apparatus
    • C23C2/0034—Details related to elements immersed in bath
    • C23C2/00342—Moving elements, e.g. pumps or mixers
    • C23C2/00344—Means for moving substrates, e.g. immersed rollers or immersed bearings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C23C2/022—Pretreatment of the material to be coated, e.g. for coating on selected surface areas by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C6/00—Coating by casting molten material on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell lead wire and, in particular, a solar cell lead wire having an excellent bondability to a cell, a manufacturing method and a storage method of the solar cell lead wire, and a solar cell.
  • This application is based on Japanese Patent Application No. 2008-302501 filed on Nov. 27, 2008, and Japanese Patent Application No. 2009-233758 filed on Oct. 7, 2009, the entire contents of which are herein incorporated by reference.
  • a polycrystalline or single crystal Si cell is used as a semiconductor substrate.
  • the solar cell 50 is manufactured by bonding solar cell lead wires 10 a and 10 b to a predetermined region of a semiconductor substrate 52 , i.e., to a front surface electrode 54 provided on a front surface of the semiconductor substrate 52 and to a back surface electrode 55 provided on a back surface thereof, using a solder. Electricity generated in the semiconductor substrate 52 is transmitted to the outside through the solar cell lead wire.
  • a configuration of a conventional solar cell lead wire will be described based on a solar cell lead wire 10 of the present invention shown in FIGS. 1A and 1B .
  • a solar cell lead wire 10 is provided with a strip-shaped conductive material 12 and a molten solder plated layer 13 formed on upper and lower surfaces of the strip-shaped conductive material 12 .
  • the strip-shaped conductive material 12 is, e.g., a circular cross-section conductor roll-processed into a strip shape, which is called a flat conductor or a flat wire.
  • the molten solder plated layer 13 is formed by supplying a molten solder on the upper and lower surfaces of the strip-shaped conductive material 12 using a hot-dip coating method.
  • the hot-dip coating method is a method in which the upper and lower surfaces of the strip-shaped conductive material 12 are cleaned by acid pickling, etc., and a solder is laminated on the upper and lower surfaces 12 a and 12 b of the strip-shaped conductive material 12 by passing the strip-shaped conductive material 12 through a molten solder bath.
  • the molten solder plated layer 13 is formed in a shape bulging from a side portion in a width direction to a center portion, so-called a mountain-like shape, by an effect of surface tension at the time of solidification of the molten solder adhered on the upper and lower surfaces 12 a and 12 b of the strip-shaped conductive material 12 .
  • the solar cell lead wire 10 is cut to a predetermined length, is sucked up by air suction and moved onto a front surface electrode (grid) 54 of the semiconductor substrate 52 , and is soldered to the front surface electrode 54 of the semiconductor substrate 52 .
  • An electrode band (finger) (not shown) electrically conducting with the front surface electrode 54 is preliminarily formed on the front surface electrode 54 .
  • the molten solder plated layer 13 of the solar cell lead wire 10 a is brought in contact with the front surface electrode 54 , and soldering is carried out in this state.
  • the soldering of the solar cell lead wire 10 b to the back surface electrode 55 of the semiconductor substrate 52 is carried out in the same way.
  • the front surface electrode 54 is impregnated with solder of the same nature as the molten solder plated layer 13 of the solar cell lead wire 10 in order to impart good solder bondability (or soldering strength) between the front surface electrode 54 of the semiconductor substrate 52 and the solar cell lead wire 10 .
  • solder solder of the same nature as the molten solder plated layer 13 of the solar cell lead wire 10
  • the semiconductor substrate 52 has become thinner in recent years and a problem of damage to the semiconductor substrate 52 at the time of impregnating the front surface electrode 54 with the solder has emerged. Therefore, omission of solder impregnation process performed on the front surface electrode 54 has been promoted in order to avoid damage to the semiconductor substrate 52 .
  • the semiconductor substrate 52 is bonded to the solar cell lead wire 10 by a formation of an intermetallic compound (e.g., Ag 3 Sn) between an electrode material of the front surface electrode 54 (e.g., Ag) and a bonding material of the molten solder plated layer 13 (e.g., Sn).
  • an intermetallic compound e.g., Ag 3 Sn
  • the patent document 1 suggests a method in which 0.002 to 0.015 mass % of P is added to solder in order to suppress generation of an oxide film on the solder surface during manufacture or in use.
  • the oxide film has a thickness of about 1 to 2 ⁇ m without discoloration up to a heating temperature of 300° C., and the oxide film has a thickness of about 5 ⁇ m with slight discoloration only after reaching 350° C.
  • the oxide film already has a thickness of more than 6 ⁇ m with significant discoloration at 250° C. in the prior art.
  • the patent document 1 describes that both the invention and the prior art have an oxide film with a thickness of about 1 ⁇ m in the case without heating.
  • the thickness of the oxide film on the surface of the molten solder plated layer 13 should be thinned in order to firmly bond the solar cell lead wire to the semiconductor substrate.
  • the oxide film of the invention already has a thickness of about 1 ⁇ m (1000 nm) even in a state before heating. Therefore, it is not sufficient to obtain strong bondability between the semiconductor substrate, for which the solder impregnation process on the front surface electrode is omitted, and the solar cell lead wire.
  • a feature of the present invention is a solar cell lead wire comprising a molten solder plated layer on a strip-shaped conductive material formed rectangular in a cross section thereof so as to be bonded to a solar cell, wherein a thickness of an oxide film on a surface of the molten solder plated layer is not more than 7 nm.
  • the strip-shaped conductive material may be a flat wire having a volume resistivity of not more than 50 ⁇ mm.
  • the strip-shaped conductive material may comprise any one of Cu, Al, Ag and Au.
  • the strip-shaped conductive material may comprise any one of tough pitch Cu, low-oxygen Cu, oxygen-free Cu, phosphorus deoxidized Cu and high purity Cu having a purity of not less than 99.9999%.
  • the molten solder plated layer may comprise a Sn-based solder, or, a Sn-based solder alloy using Sn as a first component and containing not less than 0.1 mass % of at least one element selected from the group consisting of Pb, In, Bi, Sb, Ag, Zn, Ni and Cu as a second component.
  • Another feature of the present invention is a method of manufacturing a solar cell lead wire comprising forming a strip-shaped conductive material by roll-processing or slit-processing a wire, heat-treating the strip-shaped conductive material in a continuous electrical heating or continuous heating furnace or a batch heating equipment, and when subsequently performing solder plating on the strip-shaped conductive material by supplying a molten solder, adjusting a plating temperature thereof to not more than a liquidus-line temperature of the solder plus 120° C.
  • solder plating may be performed on the strip-shaped conductive material by supplying a molten solder at a plating operating atmospheric temperature of not more than 30° C. and at a relative humidity of not more than 65% of the plating operating atmosphere.
  • Still another feature of the present invention is a storage method of a solar cell lead wire, comprising storing the above-mentioned solar cell lead wire after packing with a packing material having an oxygen permeability of not more than 1 mL/m 2 ⁇ day ⁇ MPa and a water vapor permeability of not more than 0.1 g/m 2 ⁇ day.
  • the above-mentioned solar cell lead wire may be stored at a temperature of not more than 30° C. and at a relative humidity of not more than 65% in an unpacked state or in a state that the packing is opened.
  • Still another feature of the present invention is a solar cell comprising the above-mentioned solar cell lead wire that is soldered to front and back surface electrodes of a semiconductor substrate by using a solder in a molten solder plated layer thereof.
  • FIG. 1A is a transverse sectional view showing a solar cell lead wire in a preferred embodiment of the present invention.
  • FIG. 1B is a perspective view showing a strip-shaped conductive material which is one of the raw materials for the solar cell lead wire of FIG. 1A .
  • FIG. 2 is a transverse sectional view showing a solar cell lead wire in another preferred embodiment of the present invention.
  • FIG. 3 is a schematic view showing a hot-dip plating equipment for forming a molten solder plated layer in the present embodiment.
  • FIG. 4A is a transverse sectional view showing a solar cell in which the solar cell lead wire shown in FIG. 1A is used.
  • FIG. 4B is a top view showing the solar cell shown in FIG. 4A in which the solar cell lead wire is used.
  • FIG. 5 is a top view showing an example of a solar cell module using the solar cell shown in FIG. 4 .
  • a solar cell lead wire 10 of the present invention is formed by supplying a molten solder on upper and lower surfaces of the strip-shaped conductive material 12 and being plated at an outlet port of a solder bath.
  • a wire (a wire rod having a circular cross section) is roll-processed and is heat-treated in a continuous electrical heating furnace or a batch-type heating equipment, thereby forming the strip-shaped conductive material 12 .
  • FIG. 1B shows a perspective view of the strip-shaped conductive material 12 , in which an upper surface 12 a and a lower surface 12 b are formed to be flat surfaces, a side surface 12 c is formed to be convexly bulged shape and an edge surface 12 d is formed by cutting to an appropriate length.
  • FIG. 3 shows a hot-dip solder plating equipment.
  • a hot-dip plating equipment 41 is provided with a solder bath 43 for storing molten solder (plating molten solder) 42 formed of molten solder S, an upstream guide roller 44 provided in the molten solder 42 to guide the strip-shaped conductive material 12 fed from a feeder into the molten solder 42 , and a downstream guide roller 45 provided downstream of the solder bath 43 to guide the solar cell lead wire 10 , which is made by passing the molten solder 42 and the upstream guide roller 44 , to a winder.
  • molten solder plating molten solder
  • the temperature of the molten solder 43 needs to be set to higher than the melting point of the solder used, however, Sn in the solder is easily diffused in the molten state and is bonded to oxygen in the air, and thus, oxide film generation is remarkably enhanced.
  • an operating atmospheric temperature and a level of humidity also contribute to promote oxide film generation. Therefore, it is desirable that the temperature of the molten solder be below the liquidus-line temperature of the solder used plus 120° C. (the lower limit is the liquidus-line temperature plus 50° C.), the plating operating atmospheric temperature be 30° C. or less (the lower limit is 10° C.), and relative humidity in the plating operating atmosphere be 65% or less (the lower limit is 10%).
  • the manufactured solar cell lead wire is packed with a packing material having an oxygen permeability of 1 mL/m 2 ⁇ day ⁇ MPa or less and a water vapor permeability of 0.1 g/m 2 ⁇ day or less, or is unpacked, or is in a state that the packing is opened, it is possible to suppress thickness growth of the oxide film to 7 nm or less (the lower limit is 0.5 nm) under the storage conditions of a temperature of 30° C. or less (the lower limit is 10° C.) and 65% or less relative humidity (the lower limit is 10%).
  • the solar cell lead wire 10 of the present invention has an oxide film of 7 nm or less in thickness on the surface of the molten solder plated layer 13 so that the bonding to the front and back surface electrodes of the semiconductor substrate is strong. This facilitates removal of the oxide film at the time of solder bonding and allows the solar cell lead wire 10 to be firmly soldered to the front and back surface electrodes. That is, it is possible to prevent a decrease in module output caused by mechanical removal or conductivity failure.
  • strip-shaped conductive material 12 for example, a flat wire having a volume resistivity of 50 ⁇ mm or less is used.
  • the strip-shaped conductive material 12 is formed of any one of Cu, Al, Ag and Au, or any one of tough pitch Cu, low-oxygen Cu, oxygen-free Cu, phosphorus deoxidized Cu and high purity Cu having a purity of 99.9999% or more.
  • a Sn-based solder As the molten solder plated layer, a Sn-based solder (a Sn-based solder alloy) is used.
  • Sn is used as a first component which has the heaviest component weight, and 0.1 mass % or more of at least one element selected from the group consisting of Pb, In, Bi, Sb, Ag, Zn, Ni and Cu is contained as a second component.
  • a heating temperature of the solar cell lead wire 10 or the semiconductor substrate 52 is controlled to a temperature near the melting point of the solder in the molten solder plated layer 13 .
  • the reason is that a thermal expansion coefficient of the strip-shaped conductive material 12 of the solar cell lead wire 10 (e.g., copper) is largely different from that of the semiconductor substrate 52 (Si). Heat stress which causes generation of crack on the semiconductor substrate 52 is generated due to the difference in the thermal expansion coefficient. Low temperature bonding should be performed in order to decrease the heat stress.
  • the heating temperature of the solar cell lead wire 10 or the semiconductor substrate 52 is controlled to a temperature near the melting point of the solder in the molten solder plated layer 13 .
  • the semiconductor substrate 52 is placed on a hot plate, and heat from the hot plate is used together with heat from upside of the solar cell lead wire 10 placed on the semiconductor substrate 52 .
  • the solar cell lead wire 10 including the molten solder plated layer 13 should be formed in a rectangular shape.
  • oxide film on the surface of the molten solder plated layer is thick in the conventional solar cell lead wire, oxide film removal by flux used at the time of solder bonding to the front surface electrode 54 is insufficient, which causes a soldering defect, and as a result, problems arise such that mechanical removal occurs or that sufficient output is not obtained due to conductivity failure.
  • the oxide film on the surface of the molten solder plated layer 13 to be the upper and lower surfaces of the solar cell lead wire 10 in the present embodiment has a thickness of 7 nm or less, the oxide film removal by flux is facilitated and soldering reliability is satisfactory, hence, the above-mentioned conventional problem can be solved.
  • the oxide film thickness can be defined by time of decreasing to half of the oxidation peak value in a depth profile obtained by Auger analysis.
  • Table 1 shows physicality of the material of the strip-shaped conductive material used in the present invention.
  • the strip-shaped conductive material 12 is preferably a material having relatively small volume resistivity, which is 50 ⁇ mm or less. Such a material includes Cu, Al, Ag and Au, etc., as shown in Table 1.
  • the volume resistivity of the Ag is the lowest among Cu, Al, Ag and Au. Therefore, when Ag is used as the strip-shaped conductive material 12 , it is possible to maximize power generation efficiency of a solar cell using the solar cell lead wire 10 .
  • Cu is used as the strip-shaped conductive material, it is possible to reduce cost of the solar cell lead wire.
  • Al is used as the strip-shaped conductive material, it is possible to reduce weight of the solar cell lead wire 10 .
  • any one of tough pitch Cu, low-oxygen Cu, oxygen-free Cu, phosphorus deoxidized Cu and high purity Cu having a purity of 99.9999% or more may be used for the Cu.
  • the tough pitch Cu or the phosphorus deoxidized Cu is used as the strip-shaped conductive material 12 , it is possible to reduce cost of the solar cell lead wire.
  • a solder used for the molten solder plated layer includes a Sn-based solder, or a Sn-based solder alloy in which Sn is used as a first component and 0.1 mass % or more of at least one element selected from the group consisting of Pb, In, Bi, Sb, Ag, Zn, Ni and Cu is contained as a second component.
  • solders may contain 1000 ppm or less of trace element as a third component.
  • a strip-shaped conductive material is formed by roll-processing a wire rod having a circular cross section (shot shown) which is a row material, or by slit-processing a plate.
  • the strip-shaped conductive material is heat-treated in a continuous electrical heating furnace, a continuous heating furnace or a batch-type heating equipment.
  • a molten solder plated layer is formed by supplying a molten solder using a plating line such as shown in FIG. 3 .
  • the temperature of the molten solder needs to be set to higher than the melting point of the solder used, however, Sn in the solder is easily diffused in the molten state and is bonded to oxygen in the air, and thus, oxide film generation is remarkably enhanced.
  • a manufacturing atmospheric temperature and a level of humidity also contribute to promote oxide film generation. Therefore, it is desirable that the temperature of the molten solder be below the liquidus-line temperature of the solder used plus 120° C., the plating operating atmospheric temperature be 30° C. or less and relative humidity in the plating operating atmosphere be 65% or less.
  • the temperature of the molten solder indicates a value measured by a contact-type thermometer at a position within 5 cm from the inlet or outlet port to let the strip-shaped conductive material into or out from the molten solder, and the plating operating atmospheric temperature and the relative humidity indicate values measured at 5 m from a plating line.
  • the oxide film thickness shown here is an average value of the data obtained by performing Auger analysis at 5 points on the solder-plated surface (the upper or lower surface).
  • SERA Sequential Electrochemical Reduction Analysis
  • the component of the oxide film shown here is an oxide of tin (Sn) (SnO: tin oxide (II), SnO 2 : tin oxide (IV)).
  • the oxide film thickness obtained by the SERA analysis which is SnO film thickness plus SnO 2 film thickness, is substantially equivalent to the oxide film thickness obtained by the Auger analysis.
  • the manufactured solar cell lead wire is packed with a packing material having an oxygen permeability of 1 mL/m 2 ⁇ day ⁇ MPa or less and a water vapor permeability of 0.1 g/m 2 ⁇ day or less, or is unpacked, or is in a state that the packing is opened, it is possible to suppress thickness growth of the oxide film to 7 nm or less under the storage conditions of a temperature of 30° C. or less and 65% or less relative humidity.
  • both a rolling process and a slit processing are applicable.
  • the rolling process is a method to form a round wire into a rectangle by rolling.
  • the strip-shaped conductive material is formed by the rolling process, it is possible to form a long strip-shaped conductive material having a uniform width in a longitudinal direction.
  • Materials having various widths can be dealt by the slit processing. In other words, even when a width of a raw conductive material is not uniform in a longitudinal direction or even when various raw conductive materials having different widths are used, it is possible to form a long strip-shaped conductive material having a uniform width in a longitudinal direction by the slit processing.
  • a heat treatment method includes, e.g., continuous electrical heating, continuous heating and batch-type heating.
  • the continuous electrical heating and the continuous heating are preferable for continuously heat treating over a long length.
  • the batch-type heating is preferable. From the point of view of preventing oxidation, it is preferable to use a furnace with an inert gas atmosphere such as nitrogen, etc., or a hydrogen reduction atmosphere.
  • the furnace with an inert gas atmosphere or with a hydrogen reduction atmosphere is provided by the continuous electrical heating furnace, the continuous heating furnace or the batch-type heating equipment.
  • upper and lower molten solder plated layers 13 are formed flat as shown in FIG. 2 by supplying the molten solder on the upper and lower surfaces of the strip-shaped conductive material 12 and sandwiching the plated strip-shaped conductive material 12 at an outlet port of a solder bath to adjust the plating thickness.
  • “flat” indicates that asperity on the plated surface has a height of 3 ⁇ m or less.
  • the oxide film formed on the surface of the molten solder plated layer 13 is formed in the same manner as explained with reference to FIGS. 1A and 1B .
  • a wire (a wire rod having a circular cross section) is roll-processed and is heat-treated in a continuous electrical heating furnace, a continuous heating furnace or a batch-type heating equipment, thereby forming the strip-shaped conductive material 12 .
  • This configuration suppress an amount of solder to be supplied when the conductor width of the strip-shaped conductive material 12 shown in FIG. 2 is equivalent to an electrode width, i.e., the shape in FIG. 2 prevents solder used for bonding the strip-shaped conductive material to the semiconductor substrate from being excessively supplied to a bonding portion of the front or back surface electrode and from flowing out to a portion other than the electrodes, thereby preventing a cell light-receiving surface from diminishing. As a result, it is possible to obtain the solar cell lead wire 10 excellent in shadow loss suppression.
  • the strip-shaped conductive material on the front and back surface electrodes in an orderly manner, which allows strong solder-bondability. Then, since the plated layer is flat, adhesion to an air suction jig is high and it is less likely to fall off when being moved. Furthermore, the flat plated layer facilitates to obtain a stable laminated state at the time of winding around a bobbin, and deformation of the winding is less likely to occur. Therefore, the problem, in which a lead wire is tangled due to the deformation of the winding and is not pulled out, is solved.
  • the solar cell lead wires 10 which have been described above are soldered to the front surface electrode 54 and the back surface electrode 55 of the semiconductor substrate 52 by the solder in the molten solder plated layer 13 in which the oxide film on the plated surface has a thickness of 7 nm or less.
  • solder impregnation of the front surface electrode 54 and the back surface electrode 55 of the semiconductor substrate 52 is not necessary since the solar cell lead wire 10 having a solder plated layer in which an oxide film on the plated surface has a thickness of 7 nm or less is used.
  • the solar cell lead wire 10 of the present invention is applicable to a semiconductor substrate of the type in which an electrode is impregnated with solder, and the application thereof is not limited to a semiconductor substrate of the type in which an electrode is not impregnated with solder.
  • the oxide film on the surface of the molten solder plated layer 13 as a bonded surface between the solar cell lead wire 10 and the front surface electrode 54 as well as the back surface electrode 55 is very thin such as 7 nm or less. Therefore, the oxide film is easily broken by flux effect at the time of solder bonding to the front surface electrode 54 and the back surface electrode 55 of the semiconductor substrate 52 and satisfactory solder wettability is obtained, which makes the solder bonding of the molten solder plated layer 13 to the front surface electrode 54 and the back surface electrode 55 strong. In other words, the joint with high bonding strength is obtained between the solar cell lead wire 10 and the semiconductor substrate 52 .
  • the bonding strength between the solar cell lead wire 10 and the semiconductor substrate 52 is high, it is possible to improve a manufacturing yield and module output of the solar cell module.
  • the solar cell 50 is used for a solar cell module 51 which is formed by, e.g., horizontally and vertically arraying and arranging plural solar cells 50 as shown in FIG. 5 .
  • a solar cell lead wire 10 bonded to a front surface electrode 54 f of one solar cell 50 is linearly solder-connected to a solar cell lead wire 10 bonded to a front surface electrode 54 f of another solar cell 50 , thereby electrically connecting between vertically adjacent cells.
  • the solar cell lead wire 10 bonded to the front surface electrode 54 f of the one solar cell 50 may be solder-connected to a solar cell lead wire bonded to a back surface electrode of the other solar cell 50 at a different level to electrically connect between vertically adjacent cells.
  • a Cu material as a raw conductive material was roll-processed, thereby forming a strip-shaped conductive material in a rectangular shape of 2.0 mm in width and 0.16 mm in thickness.
  • the strip-shaped conductive material was heat-treated in a batch-type heating equipment, and further, Sn-3% Ag-0.5% Cu solder plating (liquidus-line temperature of 220° C.) was applied on the peripheral surface of the strip-shaped conductive material in the hot-dip plating equipment shown in FIG. 3 (at molten solder temperature of 340° C., workplace temperature of 30° C.
  • a molten solder plated layer (a plating thickness is 20 ⁇ m at a middle portion) on upper and lower surfaces of the strip-shaped conductive material (a conductor is a heat-treated Cu).
  • a plating thickness is 20 ⁇ m at a middle portion
  • the solar cell lead wire of FIG. 1A was obtained. After that, oxide film thickness measurement (Auger analysis) and bonding strength measurement were immediately conducted.
  • a strip-shaped conductive material was formed in the same manner as the solar cell lead wire 10 of Example 1, was heat-treated in a batch-type heating equipment, and further, Sn-3% Ag-0.5% Cu solder plating (liquidus-line temperature of 220° C.) was applied on the peripheral surface of the strip-shaped conductive material in the hot-dip plating equipment shown in FIG. 3 (at molten solder temperature of 340° C., workplace temperature of 30° C. and humidity in the workplace of 65 RH %), thereby forming a molten solder plated layer (a plating thickness is 20 ⁇ m at a middle portion) on upper and lower surfaces of the strip-shaped conductive material (a conductor is a heat-treated Cu).
  • Example 2 the manufactured solar cell lead wire was not packed and was stored in a constant temperature and humidity bath for 3 months under the conditions of 30° C. ⁇ 65 RH %, and then, the oxide film thickness measurement (Auger analysis) and the bonding strength measurement were conducted.
  • the manufactured solar cell lead wire was packed in a degassed Al-bag (12 ⁇ m of antistatic PET/9 ⁇ m of Al foil/15 ⁇ m of nylon/50 ⁇ m of antistatic LLDPE, oxygen permeability of 1 mL/m 2 ⁇ day ⁇ MPa and a water vapor permeability of 0.1 g/m 2 ⁇ day) and was stored in a constant temperature and humidity bath for 3 months under the conditions of 60° C. ⁇ 95 RH % in Example 3, the conditions of 70° C. ⁇ 95 RH % in Example 4 and the conditions of 80° C. ⁇ 95 RH % in Example 5, and then, the oxide film thickness measurement (Auger analysis) and the bonding strength measurement were conducted.
  • a degassed Al-bag (12 ⁇ m of antistatic PET/9 ⁇ m of Al foil/15 ⁇ m of nylon/50 ⁇ m of antistatic LLDPE, oxygen permeability of 1 mL/m 2 ⁇ day ⁇ MPa and a water vapor permeability of 0.1 g/
  • a strip-shaped conductive material was formed in the same manner as the solar cell lead wire 10 of Example 1, was heat-treated in a batch-type heating equipment, and further, Sn-3% Ag-0.5% Cu solder plating (liquidus-line temperature of 220° C.) was applied on the peripheral surface of the strip-shaped conductive material in the hot-dip plating equipment shown in FIG. 3 (at molten solder temperature of 340° C., workplace temperature of 20° C. and humidity in the workplace of 50 RH % in Example 6, and at molten solder temperature of 340° C., workplace temperature of 30° C.
  • Example 6 after making the solar cell lead wire, the oxide film thickness measurement (Auger analysis) and the bonding strength measurement were immediately conducted.
  • Example 7 the manufactured solar cell lead wire was packed in a degassed Al-bag (12 ⁇ m of antistatic PET/9 ⁇ m of Al foil/15 ⁇ m of nylon/50 ⁇ m of antistatic LLDPE, oxygen permeability of 1 mL/m 2 ⁇ day ⁇ MPa and a water vapor permeability of 0.1 g/m 2 ⁇ day) and was stored in a constant temperature and humidity bath for 3 months under the conditions of 85° C. ⁇ 95 RH %, and then, the oxide film thickness measurement (Auger analysis) and the bonding strength measurement were conducted.
  • a degassed Al-bag (12 ⁇ m of antistatic PET/9 ⁇ m of Al foil/15 ⁇ m of nylon/50 ⁇ m of antistatic LLDPE, oxygen permeability of 1 mL/m 2 ⁇ day ⁇ MPa and a water vapor permeability of 0.1 g/m 2 ⁇ day
  • a strip-shaped conductive material was formed in the same manner as the solar cell lead wire 10 of Example 1, was heat-treated in a batch-type heating equipment, and further, Sn-3% Ag-0.5% Cu solder plating (liquidus-line temperature of 220° C.) was applied on the peripheral surface of the strip-shaped conductive material in the hot-dip plating equipment shown in FIG. 3 (at molten solder temperature of 350° C., workplace temperature of 35° C. and humidity in the workplace of 70 RH %), thereby forming a molten solder plated layer (a plating thickness is 20 ⁇ m at a middle portion) on upper and lower surfaces of the strip-shaped conductive material (a conductor is a heat-treated Cu). After that, the oxide film thickness measurement (Auger analysis) and the bonding strength measurement were immediately conducted.
  • a strip-shaped conductive material was formed in the same manner as the solar cell lead wire 10 of Example 1, was heat-treated in a batch-type heating equipment, and further, Sn-3% Ag-0.5% Cu solder plating (liquidus-line temperature of 220° C.) was applied on the peripheral surface of the strip-shaped conductive material in the hot-dip plating equipment shown in FIG. 3 (at molten solder temperature of 340° C., workplace temperature of 30° C. and humidity in the workplace of 65 RH %), thereby forming a molten solder plated layer (a plating thickness is 20 ⁇ m at a middle portion) on upper and lower surfaces of the strip-shaped conductive material (a conductor is a heat-treated Cu).
  • Comparative Example 2 the manufactured solar cell lead wire was not packed and was stored in a constant temperature and humidity bath for 3 months under the conditions of 60° C. ⁇ 95 RH %, and then, the oxide film thickness measurement (Auger analysis) and the bonding strength measurement were conducted.
  • the manufactured solar cell lead wire was packed in a degassed Al-deposited bag (12 ⁇ m of Al-deposited PET/15 ⁇ m of nylon/50 ⁇ m of antistatic LLDPE, oxygen permeability of 10 mL/m 2 ⁇ day ⁇ MPa and a water vapor permeability of 10 g/m 2 ⁇ day) and was stored in a constant temperature and humidity bath for 3 months under the conditions of 60° C. ⁇ 95 RH %, and then, the oxide film thickness measurement (Auger analysis) and the bonding strength measurement were conducted.
  • the thickness of the oxidation film is thin which is 7 nm or less in all of Examples 1, 2, 3, 4 and 5 while the thickness of the oxidation film is thick which is more than 7 nm in all of Comparative Examples 1, 2 and 3.
  • the oxide film thickness is defined by time of decreasing to half of the oxidation peak value in a depth profile (sputtering time (sec) vs. composition ratio (at %)) obtained by Auger analysis, and was calculated by the formula below.
  • Oxide film thickness (nm) sputtering rate converted to SiO 2 (nm/min) ⁇ time of decreasing to half of the oxidation peak value (min)
  • each solar cell lead wire was placed on a copper plate and was heated by a hot plate (kept at 260° C. for 30 minutes), and the solar cell lead wire was soldered to a semiconductor substrate of 155 mm ⁇ 155 mm ⁇ 16 ⁇ m having two bus bar electrodes (without pre-solder impregnation of the electrode) as shown in FIGS. 4A and 4B . Furthermore, in order to evaluate the bonding strength of these solar cell lead wires, which are soldered to the semiconductor substrate, with respect to the semiconductor substrate, 90° peeling test (testing speed: 10 mm/min, peeled length: 15 mm) was conducted.
  • the section of “Plating temperature” indicates the temperature of the molten solder plating.
  • the section of “Workplace temperature” indicates the temperature of the workplace where the plating operation was carried out.
  • the section of “Humidity in workplace” indicates the relative humidity of the workplace where the plating operation was carried out.
  • the section of “Packing material” indicates a packing bag used for storing in a constant temperature and humidity bath.
  • the section of “Storage temperature” indicates the temperature in the constant temperature and humidity bath.
  • the section of “Storage humidity” indicates the relative humidity in the constant temperature and humidity bath.
  • the section of “Bonding strength” indicates the results of the 90° peeling test in which the copper plate and the solar cell lead wire were pulled to test the extent of pull force by which the bonding is peeled, and O (circle) indicates the pull force of 10N or more and X (cross) indicates the pull force of less than 10N.

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US20160133760A1 (en) 2016-05-12
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