JP5787019B2 - 太陽電池用リード線の製造方法 - Google Patents
太陽電池用リード線の製造方法 Download PDFInfo
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- JP5787019B2 JP5787019B2 JP2014218423A JP2014218423A JP5787019B2 JP 5787019 B2 JP5787019 B2 JP 5787019B2 JP 2014218423 A JP2014218423 A JP 2014218423A JP 2014218423 A JP2014218423 A JP 2014218423A JP 5787019 B2 JP5787019 B2 JP 5787019B2
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- solar cell
- lead wire
- solder
- conductive material
- strip
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 125
- 238000007747 plating Methods 0.000 claims description 85
- 239000004020 conductor Substances 0.000 claims description 76
- 238000010438 heat treatment Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 12
- 238000005096 rolling process Methods 0.000 claims description 10
- 239000010949 copper Substances 0.000 description 43
- 239000004065 semiconductor Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 238000004458 analytical method Methods 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 238000005259 measurement Methods 0.000 description 14
- 230000035699 permeability Effects 0.000 description 12
- 238000005476 soldering Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000005470 impregnation Methods 0.000 description 5
- 101100043261 Caenorhabditis elegans spop-1 gene Proteins 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 229920000092 linear low density polyethylene Polymers 0.000 description 3
- 239000004707 linear low-density polyethylene Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101100493712 Caenorhabditis elegans bath-42 gene Proteins 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000840 electrochemical analysis Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
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Description
原料導電材であるCu材料を圧延加工して幅2.0mm、厚さ0.16mmの平角線状の帯板状導電材を形成した。この帯板状導電材をバッチ式加熱設備で熱処理し、さらに、この帯板状導電材の周囲に図3に示す溶融めっき設備(はんだ浴温度340℃、作業現場の温度30℃、作業現場の湿度62RH%)でSn−3%Ag−0.5%Cuはんだ(液相線温度220℃)のめっきを施し、帯板状導電材の上下面に溶融はんだめっき層(中央部のめっき厚20μm)を形成した(導体は熱処理Cu)。以上により、図1Aの太陽電池用リード線を得た。その後、直ちに酸化膜厚測定(オージェ分析)及び接合力測定を実施した。
実施例1の太陽電池用リード線10と同様に帯板状導電材を形成し、バッチ式加熱設備で熱処理し、さらに、この帯板状導電材の周囲に図3に示す溶融めっき設備(はんだ浴温度340℃、作業現場の温度30℃、作業現場の湿度65RH%)でSn−3%Ag−0.5%Cuはんだ(液相線温度220℃)のめっきを施し、帯板状導電材の上下面に、溶融はんだめっき層(中央部のめっき厚20μm)を形成した(導体は熱処理Cu)。さらに、実施例2は作製した太陽電池用リード線を梱包せずに、30℃×65RH%の条件の恒温・恒湿槽で3ヶ月保管後、酸化膜厚測定(オージェ分析)及び接合力測定を実施した。実施例3〜5は作製した太陽電池用リード線を脱気したAl袋(静電防止PET 12μm/Al箔 9μm/ナイロン 15μm/静電防止LLDPE 50μm、酸素透過度1mL/m2・day・MPa、透湿度0.1g/m2・day)で梱包し、実施例3は60℃×95RH%の条件、実施例4は70℃×95RH%の条件、実施例5は80℃×95RH%の条件の恒温・恒湿槽で3ヶ月保管後、酸化膜厚測定(オージェ分析)及び接合力測定を実施した。
(実施例6及び7)
実施例1の太陽電池用リード線10と同様に、帯板状導電材を形成し、バッチ式加熱設備で熱処理し、さらに、この帯板状導電材の周囲に図3に示す溶融めっき設備(実施例6は、はんだ浴温度340℃、作業現場の温度20℃、作業現場の湿度50RH%で、実施例7は、はんだ浴温度340℃、作業現場の温度30℃、作業現場の湿度65RH%)でSn−3%Ag−0.5%Cuはんだ(液相線温度220℃)のめっきを施し、帯板状導電材の上下面に、溶融はんだめっき層(中央部のめっき厚20μm)を形成した(導体は熱処理Cu)。さらに実施例6は、太陽電池用リード線を製造後、直ちに酸化膜厚測定(オージェ分析)及び接合力測定を実施した。実施例7は作製した太陽電池用リード線を脱気したAl袋(静電防止PET 12μm/Al箔 9μm/ナイロン 15μm/静電防止LLDPE 50μm、酸素透過度1mL/m2・day・MPa、透湿度0.1g/m2・day)で梱包し、85℃×95RH%の条件の恒温・恒湿槽で3ヶ月保管後、酸化膜厚測定(オージェ分析)及び接合力測定を実施した。
実施例1の太陽電池用リード線10と同様に帯板状導電材を形成し、バッチ式加熱設備で熱処理し、さらに、この帯板状導電材の周囲に図3に示す溶融めっき設備(はんだ浴温度350℃、作業現場の温度35℃、作業現場の湿度70RH%)でSn−3%Ag−0.5%Cuはんだ(液相線温度220℃)のめっきを施し、帯板状導電材の上下面に、溶融はんだめっき層(中央部のめっき厚20μm)を形成した(導体は熱処理Cu)。その後、直ちに酸化膜厚測定(オージェ分析)及び接合力測定を実施した。
実施例1の太陽電池用リード線10と同様に帯板状導電材を形成し、バッチ式加熱設備で熱処理し、さらに、この帯板状導電材の周囲に図3に示す溶融めっき設備(はんだ浴温度340℃、作業現場の温度30℃、作業現場の湿度65RH%)でSn−3%Ag−0.5%Cuはんだ(液相線温度220℃)のめっきを施し、帯板状導電材の上下面に、溶融はんだめっき層(中央部のめっき厚20μm)を形成した(導体は熱処理Cu)。さらに、比較例2は作製した太陽電池用リード線を梱包せずに、60℃×95RH%の条件の恒温・恒湿槽で3ヶ月保管後、酸化膜厚測定(オージェ分析)及び接合力測定を実施した。比較例3は作製した太陽電池用リード線を脱気したAl蒸着袋(Al蒸着PET 12μm/ナイロン 15μm/静電防止LLDPE 50μm、酸素透過度10mL/m2・day・MPa、透湿度10g/m2・day)で梱包し、60℃×95RH%の条件の恒温・恒湿槽で3ヶ月保管後、酸化膜厚測定(オージェ分析)及び接合力測定を実施した。
酸化膜厚(nm)=SiO2換算スパッタレート(nm/min)
×酸素ピーク値が半減する時間(min)
12 帯板状導電材
13 溶融はんだめっき層
Claims (2)
- 太陽電池セルに接合すべく、断面形状が平角状に加工された帯板状導電材に溶融はんだめっき層を設けた太陽電池用リード線の製造方法であって、
素線を圧延加工または平板をスリット加工することにより帯板状導電材を形成し、該帯板状導電材を連続通電加熱又は連続加熱式加熱炉又はバッチ加熱設備で熱処理し、その後、溶融はんだを供給して帯板状導電材に、はんだめっきする際に、そのめっき温度をはんだの液相線温度+120℃以下とし、めっき作業雰囲気の温度を30℃以下、めっき作業雰囲気の相対湿度を65%以下にすることで前記溶融はんだめっき層表面の酸化膜厚が3.0nm以下の太陽電池用リード線を製造することを特徴とする太陽電池用リード線の製造方法。 - 溶融はんだを供給して帯板状導電材にはんだめっきする際の、めっき作業雰囲気の温度を20℃以下、めっき作業雰囲気の相対湿度を50%以下にする請求項1記載の太陽電池用リード線の製造方法。
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