US8410891B2 - Electrical multilayer component - Google Patents
Electrical multilayer component Download PDFInfo
- Publication number
- US8410891B2 US8410891B2 US13/146,490 US201013146490A US8410891B2 US 8410891 B2 US8410891 B2 US 8410891B2 US 201013146490 A US201013146490 A US 201013146490A US 8410891 B2 US8410891 B2 US 8410891B2
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- Prior art keywords
- multilayer component
- electrical multilayer
- component according
- dielectric layer
- layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
Definitions
- German patent document DE 10 2004 058 410 A1 discloses an electrical multilayer component with an ESD protection element.
- the present invention specifies an electrical multilayer component comprising an ESD protection component having a low breakdown voltage and a low ESD clamping voltage.
- An electrical multilayer component comprising a base body with at least two external electrodes.
- the electrical multilayer component comprises at least one first and at least one second internal electrode, which are electrically conductively connected to a respective external electrode.
- the internal electrode is connected to the external electrode directly or via plated-through holes in the multilayer component.
- the electrical multilayer component comprises at least one ceramic varistor layer.
- the ceramic varistor layer comprises at least the first internal electrode.
- the first internal electrode is preferably enclosed for the most part by the ceramic varistor layer, wherein the first internal electrode can be freely contact-connected at least in the region of the contact with the external electrode thereof.
- the first internal electrode is applied directly on the varistor layer.
- the electrical multilayer component comprises at least one dielectric layer.
- the dielectric layer is arranged at least between a varistor layer and at least one further layer.
- the further layer comprises the second internal electrode.
- the second internal electrode is enclosed for the most part by the further layer, wherein the second internal electrode can be freely contact-connected at least in the region of the contact with the external electrode thereof.
- the second internal electrode is preferably applied directly on the further layer.
- the dielectric layer has at least one opening.
- the opening can be embodied as a perforation, as a cutout or as a cavity.
- the opening in the dielectric layer is preferably filled with a semiconducting material or a metal. Preferably, the opening is completely filled. In a further embodiment, however, individual or a plurality of closed or open cavities are also present in the filling of the opening.
- the semiconducting material with which one or more openings in the dielectric layer are filled comprises a varistor ceramic.
- the varistor ceramic with which the opening in the dielectric layer is filled is preferably identical to the varistor ceramic of the further varistor layer.
- the varistor ceramic in the opening in the dielectric layer is different than the ceramic of the varistor layer.
- the semiconducting material comprises a resistance material.
- the metal with which one or more openings in a dielectric layer are filled comprises a metal preferably comprising silver, palladium, platinum, silver-palladium or further suitable metals.
- openings in the dielectric layer can be filled with different materials.
- all the openings in a dielectric layer are filled with the same material.
- the base body of the electrical multilayer component comprises covering assemblies that terminate the base body of the multilayer component toward the top and bottom in the thickness direction.
- the covering assemblies each comprise at least one dielectric layer.
- the covering assemblies of the electrical multilayer component and the dielectric layers which have at least one opening can comprise the same material. In a further embodiment, it is also possible for the covering assemblies and the dielectric layer to comprise different materials.
- a zirconium oxide (ZrO 2 ) or a zirconium oxide-glass composite, an aluminum oxide (AlO x ) or an aluminum oxide-glass composite, a manganese oxide (MnO) or a manganese oxide glass is used for the dielectric layer.
- the dielectric layers can also comprise further suitable materials.
- the electrical multilayer component comprises an individual or a plurality of plated-through holes, so-called vias, by means of which individual or all internal electrodes of the electrical multilayer component are connected to the external contacts.
- the external contacts of the electrical multilayer component are embodied as an array (row or matrix arrangement).
- an array row or matrix arrangement.
- LGA land grid array
- BGA ball grid array
- the internal electrodes of the electrical multilayer component are preferably connected to the external contacts via plated-through holes.
- the dielectric layer comprising at least one opening is embodied in such a way that together with at least two adjacent varistor layers and two overlapping internal electrodes it forms an ESD discharge section.
- the opening in the dielectric layer is filled with a semiconducting material or a metal, in particular by means of a method of printing the dielectric layer, in such a way that a so-called catch pad, which is known, is formed.
- a plated-through hole (via) can be arranged thereon, whereby a self-supporting electrode structure is formed above the dielectric layer.
- the electrical multilayer component has the function of a varistor with an integrated ESD protection component.
- the varistor preferably has a capacitance of less than 1 pF.
- the ESD protection component of the electrical multilayer component is preferably embodied in such a way that it has an ESD breakdown voltage of less than 20 V for a current of 1 mA.
- the ESD protection component of the electrical multilayer component preferably has an ESD clamping voltage of less than 500 V.
- An electrical multilayer component as described above has a reduction of the total capacitance of the component specifically by virtue of the arrangement of the small capacitance of the dielectric layer connected in series with the varistor capacitance.
- the clamping voltage of the electrical multilayer component is only slightly increased by the dielectric layer compared with conventional multilayer components.
- the specified clamping voltage of the ESD protection component is substantially dependent on the distance between the internal electrode layers.
- the additional dielectric layer between the varistor layer significantly reduces the total capacitance of the electrical multilayer component, as a result of which the current-carrying capacity and pulse strength of the component are increased further.
- FIG. 1 shows a schematic construction of a first exemplary embodiment of the electrical multilayer component
- FIG. 2 shows a further embodiment of the electrical multilayer component
- FIG. 3 shows a further embodiment of the electrical multilayer component, wherein the external contacts are embodied as a ball grid array
- FIG. 4 shows a further embodiment of the electrical multilayer component, wherein the external contacts are embodied as land grid arrays
- FIG. 5 shows a further embodiment of the electrical multilayer component, wherein the dielectric layer has two openings
- FIG. 6 shows a further embodiment of the electrical multilayer component, which exhibits a plurality of parallel-connected ESD regions in a multilayer component
- FIG. 7 shows a further embodiment of the electrical multilayer component, wherein a plurality of dielectric layers having perforations are arranged between two electrodes;
- FIG. 8 shows a further embodiment of the electrical multilayer component, wherein, on that side of the dielectric layer which is remote from the varistor layer, a catch pad is present on the filling of the opening;
- FIG. 9 shows a further embodiment of the electrical multilayer component, wherein, on that side of the dielectric layer which faces the varistor layer, a catch pad is present on the filling of the opening.
- FIG. 1 shows a first embodiment of an electrical multilayer component, which comprises a base body 1 .
- External electrodes 2 , 2 ′ are arranged at the side areas of the base body 1 .
- the external electrodes are conductively connected to the internal electrodes 3 , 4 lying in the interior of the base body 1 .
- the base body 1 has a varistor layer 5 comprising a first internal electrode 3 .
- the first internal electrode 3 is enclosed for the most part by the varistor layer 5 .
- the electrical multilayer component comprises a further layer 7 , which is embodied as a further varistor layer in the embodiment illustrated.
- the further layer 7 comprises a second internal electrode 4 , which is enclosed for the most part by the further layer 7 .
- a dielectric layer 6 having an opening 8 is arranged between the varistor layer 5 and the further layer 7 .
- the opening 8 is filled with a semiconducting material or a metal.
- the base body 1 of the electrical multilayer component is terminated by covering assemblies 9 , 9 ′ in the thickness direction, wherein the covering assemblies 9 , 9 ′ preferably each comprise at least one dielectric layer.
- FIG. 2 shows a further embodiment of the electrical multilayer component.
- the construction of the electrical multilayer component is virtually identical to the construction in FIG. 1 , wherein the first internal electrode 3 is applied on a surface of the varistor layer 5 and the second internal electrode 4 is applied on a surface of the further layer 7 .
- the first internal electrode 3 is arranged between the varistor layer 5 and the covering assembly 9 .
- the second internal electrode 4 is arranged between the further layer 7 and the further second covering assembly 9 ′.
- FIG. 3 shows a further embodiment of the electrical multilayer component.
- the electrical multilayer component comprises a base body 1 , in which a varistor layer 5 is arranged, on which a first internal electrode 3 is arranged. In the thickness direction, the first internal electrode 3 and the varistor layer 5 are terminated toward the top by a first covering assembly 9 .
- a dielectric layer 6 having openings 8 is arranged below the varistor layer 5 . The openings 8 are filled with a semiconducting material or metal.
- Second internal electrodes 4 are arranged on the underside of the dielectric layer 6 .
- the first internal electrode 3 and the second internal electrodes 4 are connected to external contacts 2 by means of vias 10 .
- the vias 10 can be cylindrical, for example, as illustrated in FIG.
- the vias 10 can taper, for example, in the direction toward the external contacts 2 or in the direction toward the internal electrodes 3 , 4 .
- the external contacts 2 are embodied as ball grid arrays.
- the base body 1 of the electrical multilayer component is terminated by a second covering assembly 9 ′ toward the bottom in the thickness direction.
- FIG. 4 illustrates a further embodiment of the electrical multilayer component, this embodiment being similar to the embodiment in FIG. 3 , wherein the dielectric layer 6 has the two openings 8 .
- the dielectric layer 6 is arranged between two layers 5 , 7 in the thickness direction.
- the two layers 5 , 7 are embodied as varistor ceramic.
- the external contacts 2 , 2 ′ of the electrical multilayer component are embodied as land grid arrays.
- the vias can be cylindrical, for example, as illustrated in FIG. 4 , or else shaped as truncated cones, wherein the vias can taper for example in the direction toward the external contacts 2 , 2 ′ or in the direction toward the internal electrodes 3 , 4 .
- FIG. 5 shows a further embodiment of the electrical multilayer component, this embodiment being similar to the embodiment in FIG. 1 .
- the dielectric layer 6 in FIG. 5 has two openings 8 filled with a semiconducting material or with a metal.
- FIG. 6 shows a further embodiment of the electrical multilayer component, wherein the electrical multilayer component comprises three ESD protection elements connected in parallel.
- the ESD protection elements have each already been described in detail per se in FIG. 2 .
- Each of the ESD protection elements comprises a first varistor layer 5 and also a further layer 7 .
- the further layer 7 is embodied as a further varistor layer.
- a dielectric layer 6 having an opening 8 is arranged between the varistor layer 5 and the further layer 7 .
- the opening 8 is filled with a semiconducting material or with metal.
- the ESD protection elements each have a first internal electrode 3 and a second internal electrode 4 , wherein the internal electrodes 3 , 4 are applied on the varistor layer 5 and on the further layer 7 , respectively.
- FIG. 7 shows a further embodiment of the electrical multilayer component.
- the electrical multilayer component comprises a base body 1 having covering assemblies 9 , 9 ′, wherein the covering assemblies 9 , 9 ′ preferably comprise at least one dielectric layer.
- a varistor layer 5 and a further layer 7 are arranged between the covering assemblies 9 , 9 ′, wherein the further layer 7 is embodied as a varistor layer.
- Arranged between the varistor layer 5 and the further layer 7 are three dielectric intermediate layers 6 , which are spaced apart from one another in the thickness direction by intermediate layers composed of a varistor ceramic.
- the dielectric layers 6 each have an opening 8 .
- the openings 8 in the dielectric layers 6 are each filled with a semiconducting material, and the opening 8 ′ is filled with a metal.
- the electrical multilayer component comprises internal electrodes 3 , 4 , which are connected to external contacts 2 , 2 ′.
- the first internal electrode 3 is arranged between the varistor layer 5 and the covering assembly 9 .
- the second internal electrode 4 is arranged between the further layer 7 and the second covering assembly 9 ′.
- FIG. 8 shows an embodiment wherein, in a manner similar to the exemplary embodiments in FIGS. 3 and 4 , a base body 1 , a varistor layer 5 , a first internal electrode 3 , a first covering assembly 9 , a dielectric layer 6 having openings 8 , a second covering assembly 9 ′, vias 10 and external contacts 2 , 2 ′ are present.
- the openings 8 are filled with a semiconducting material or metal, such that catch pads 11 are formed, which spread out on a surface of the dielectric layer 6 laterally with respect to the openings 8 .
- the catch pads 11 are situated on that side of the dielectric layer 6 which is remote from the varistor layer 5 .
- the catch pads 11 can be produced, for example, by the openings being filled with the semiconducting material or metal by a printing method, such that a proportion of the material used for the fillings forms the catch pads 11 on the top side.
- the catch pads 11 as illustrated in FIG. 8 , can be provided with the associated vias 10 and thus be electrically conductively connected to the external contacts 2 ′. In this case, the catch pads 11 can function as second internal electrodes. Instead, it is additionally possible to provide second internal electrodes electrically conductively connected to the catch pads 11 .
- typical dimensions are, for example, a thickness of the dielectric layer 6 of 10 ⁇ m to 30 ⁇ m, a diameter of the openings 8 of 20 ⁇ m to 30 ⁇ m, a diameter of the catch pads 11 of approximately 100 ⁇ m, a thickness of the catch pads 11 of 3 ⁇ m to 5 ⁇ m, and a height of a via 10 plus catch pad 11 of approximately 50 ⁇ m.
- the vias 10 can be cylindrical or conical, for example.
- FIG. 9 shows a further embodiment, wherein, in a manner similar to the embodiment in accordance with FIG. 8 , a base body 1 , a varistor layer 5 , a first internal electrode 3 , a first covering assembly 9 , a dielectric layer 6 having openings 8 , a second covering assembly 9 ′, vias 10 and external contacts 2 , 2 ′ are present.
- the openings 8 are filled with a semiconducting material or metal, such that catch pads 11 are formed, which spread out on a surface of the dielectric layer 6 laterally with respect to the openings 8 .
- the catch pads 11 are situated on that side of the dielectric layer 6 which faces the varistor layer 5 .
- Second internal electrodes 4 are arranged on that side of the dielectric layer 6 which is remote from the varistor layer 5 and are electrically conductively connected to external contacts 2 ′ by means of vias 10 .
- the dimensions, in particular of the openings 8 and of the catch pads 11 can correspond to the dimensions specified above with regard to the embodiment in FIG. 8 .
- the electrical multilayer component comprises a plurality of ESD protection devices which are connected in series or in parallel and which are formed by at least one dielectric layer having one or more openings and at least one adjoining varistor layer.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009007316A DE102009007316A1 (de) | 2009-02-03 | 2009-02-03 | Elektrisches Vielschichtbauelement |
DE102009007316.7 | 2009-02-03 | ||
DE102009007316 | 2009-02-03 | ||
PCT/EP2010/051247 WO2010089294A1 (fr) | 2009-02-03 | 2010-02-02 | Composant électrique multicouche |
Publications (2)
Publication Number | Publication Date |
---|---|
US20120044039A1 US20120044039A1 (en) | 2012-02-23 |
US8410891B2 true US8410891B2 (en) | 2013-04-02 |
Family
ID=42035891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/146,490 Active US8410891B2 (en) | 2009-02-03 | 2010-02-02 | Electrical multilayer component |
Country Status (7)
Country | Link |
---|---|
US (1) | US8410891B2 (fr) |
EP (1) | EP2394275B1 (fr) |
JP (1) | JP5758305B2 (fr) |
KR (1) | KR101665742B1 (fr) |
CN (1) | CN102308341B (fr) |
DE (1) | DE102009007316A1 (fr) |
WO (1) | WO2010089294A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10706995B1 (en) * | 2018-12-12 | 2020-07-07 | Tdk Corporation | Chip varistor |
US11532437B2 (en) | 2017-04-20 | 2022-12-20 | Tdk Electronics Ag | Multilayer device and method for producing a multilayer device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009010212B4 (de) | 2009-02-23 | 2017-12-07 | Epcos Ag | Elektrisches Vielschichtbauelement |
EP2381451B1 (fr) * | 2010-04-22 | 2018-08-01 | Epcos AG | Procédé de production d'un composant électrique multicouches et composant électrique multicouches |
DE102010036270B4 (de) * | 2010-09-03 | 2018-10-11 | Epcos Ag | Keramisches Bauelement und Verfahren zur Herstellung eines keramischen Bauelements |
TW201234393A (en) * | 2011-02-09 | 2012-08-16 | Yageo Corp | Multi-layer varistor having core electrode unit |
DE102012101606A1 (de) * | 2011-10-28 | 2013-05-02 | Epcos Ag | ESD-Schutzbauelement und Bauelement mit einem ESD-Schutzbauelement und einer LED |
KR101983135B1 (ko) | 2012-12-27 | 2019-05-28 | 삼성전기주식회사 | 인덕터 및 그의 갭층 제조를 위한 조성물 |
KR101808794B1 (ko) * | 2015-05-07 | 2018-01-18 | 주식회사 모다이노칩 | 적층체 소자 |
JP7322793B2 (ja) * | 2020-04-16 | 2023-08-08 | Tdk株式会社 | チップバリスタの製造方法及びチップバリスタ |
US20230215727A1 (en) * | 2022-01-05 | 2023-07-06 | Polar Semiconductor, Llc | Forming passivation stack having etch stop layer |
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WO2007076849A1 (fr) | 2006-01-05 | 2007-07-12 | Epcos Ag | Composant ceramique monolithique et son procede de fabrication |
DE102007012049A1 (de) | 2007-03-13 | 2008-09-18 | Epcos Ag | Elektrisches Bauelement |
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JP2002368420A (ja) * | 2001-06-05 | 2002-12-20 | Murata Mfg Co Ltd | ガラスセラミック多層基板の製造方法およびガラスセラミック多層基板 |
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2009
- 2009-02-03 DE DE102009007316A patent/DE102009007316A1/de not_active Ceased
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2010
- 2010-02-02 WO PCT/EP2010/051247 patent/WO2010089294A1/fr active Application Filing
- 2010-02-02 KR KR1020117020632A patent/KR101665742B1/ko active IP Right Grant
- 2010-02-02 US US13/146,490 patent/US8410891B2/en active Active
- 2010-02-02 CN CN2010800064889A patent/CN102308341B/zh active Active
- 2010-02-02 JP JP2011546873A patent/JP5758305B2/ja active Active
- 2010-02-02 EP EP10701703.0A patent/EP2394275B1/fr active Active
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JPH11265808A (ja) | 1998-03-16 | 1999-09-28 | Tokin Corp | サージ吸収素子及びその製造方法 |
US6370010B1 (en) * | 1999-10-18 | 2002-04-09 | Murata Manufacturing Co., Ltd | Multi-layer capacitor, wiring board, and high-frequency circuit |
DE102004010001A1 (de) | 2004-03-01 | 2005-09-22 | Epcos Ag | Elektrisches Bauelement und schaltungsanordnung mit dem Bauelement |
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US11532437B2 (en) | 2017-04-20 | 2022-12-20 | Tdk Electronics Ag | Multilayer device and method for producing a multilayer device |
US10706995B1 (en) * | 2018-12-12 | 2020-07-07 | Tdk Corporation | Chip varistor |
Also Published As
Publication number | Publication date |
---|---|
CN102308341A (zh) | 2012-01-04 |
JP5758305B2 (ja) | 2015-08-05 |
WO2010089294A1 (fr) | 2010-08-12 |
KR101665742B1 (ko) | 2016-10-12 |
EP2394275A1 (fr) | 2011-12-14 |
CN102308341B (zh) | 2013-06-05 |
DE102009007316A1 (de) | 2010-08-05 |
JP2012517097A (ja) | 2012-07-26 |
KR20110116041A (ko) | 2011-10-24 |
US20120044039A1 (en) | 2012-02-23 |
EP2394275B1 (fr) | 2019-10-16 |
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