US8092706B2 - Piezoelectric ceramic composition - Google Patents
Piezoelectric ceramic composition Download PDFInfo
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- US8092706B2 US8092706B2 US12/280,451 US28045107A US8092706B2 US 8092706 B2 US8092706 B2 US 8092706B2 US 28045107 A US28045107 A US 28045107A US 8092706 B2 US8092706 B2 US 8092706B2
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- 239000000203 mixture Substances 0.000 title claims abstract description 86
- 239000000919 ceramic Substances 0.000 title claims abstract description 53
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 239000004615 ingredient Substances 0.000 claims abstract description 6
- 229910002902 BiFeO3 Inorganic materials 0.000 claims description 19
- 230000010287 polarization Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 31
- 239000002184 metal Substances 0.000 abstract description 12
- 239000002075 main ingredient Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 30
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- 238000005245 sintering Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000001747 exhibiting effect Effects 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- 229910052748 manganese Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 229910052727 yttrium Inorganic materials 0.000 description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 6
- 239000011812 mixed powder Substances 0.000 description 6
- 229910052706 scandium Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 238000010298 pulverizing process Methods 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
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- 230000000052 comparative effect Effects 0.000 description 3
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- 229910052708 sodium Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Inorganic materials O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
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- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 238000003826 uniaxial pressing Methods 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910019714 Nb2O3 Inorganic materials 0.000 description 1
- 229910020698 PbZrO3 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910000411 antimony tetroxide Inorganic materials 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
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- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Inorganic materials O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3294—Antimony oxides, antimonates, antimonites or oxide forming salts thereof, indium antimonate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/768—Perovskite structure ABO3
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
Definitions
- the present invention relates to a piezoelectric ceramic composition, and particularly relates to a piezoelectric ceramic composition containing no lead.
- a PZT (PhTiO 3 —PbZrO 3 ) constituent-based ceramic containing lead has been used in a piezoelectric ceramic composition.
- the reason for it is that the aforesaid PZT, exhibiting excellent piezoelectric properties and a high mechanical quality coefficient, can readily produce materials exhibiting various desired characteristics which are required for various applications such as a sensor, an actuator, and a filter. Further, since the PZT has a high relative dielectric constant, it may also be used as a capacitor.
- the piezoelectric ceramic composition composed of the aforesaid PZT exhibits excellent characteristics, it contains lead as an element constituting the composition, leading to a concern that harmful lead is liquated from industrial waste of products containing PZT to result in an environmental pollution.
- the increasing awareness of environmental concern in recent years has made it difficult to manufacture the products containing substances such as PZT which have been a cause of environmental pollution.
- Patent Document 1 Japanese Patent Application Publication (hereinafter also referred to as JP-A) No. 2004-300012
- Patent Document 2 JP-A No. 2004-244301
- Patent Document 3 JP-A No. 2004-244300
- the present invention has been achieved in consideration of such problems, and it is an object of the present invention to provide a piezoelectric ceramic composition exhibiting excellent piezoelectric properties which can be attained by addition of not less than two metal elements.
- a piezoelectric ceramic composition incorporates a main ingredient represented by a Formula 1 and an auxiliary ingredient represented by a Formula 2.
- a Formula 1 ⁇ Li x (K 1-y Na y ) 1-x ⁇ (Nb 1-z-w Ta z Sb w ) O 3
- Formula 1 wherein 0 ⁇ X 0.2, 0 ⁇ Y ⁇ 1, 0 ⁇ Z ⁇ 0.4, and 0 ⁇ W ⁇ 0.2
- Formula 2 ABO 3 , wherein A represents a metal element having a valence of +3 or a combination of metal elements having a valence of +3 on average, and B represents a metal element having a valence of +3 or a combination of metal elements having a valence of +3 on average, and ABO 3 represents a compound having a perovskite structure.
- the present invention is effective in improving piezoelectric properties and dielectric properties.
- the invention described in Item 2, above, is a piezoelectric ceramic composition of claim 1 , wherein A in Formula 2 comprises Bi.
- the invention described in Item 3, above, is a piezoelectric ceramic composition of claim 1 or 2 , wherein B in Formula 2 comprises at least one of Fe, In, Sc, Y, and Mn.
- addition of a sub-component represented by ABO 3 increases the relative dielectric constant as well as a degree of polarization of the resulting piezoelectric ceramic composition, to further result in a piezoelectric ceramic composition exhibiting excellent piezoelectric properties.
- FIG. 1( a ) shows hysteresis loops of a piezoelectric ceramic composition composed of only one main component
- FIG. 1( b ) shows hysteresis loops of a piezoelectric ceramic composition of the present embodiment in which a sub-component has been added.
- the main component of the present embodiment is represented by formula ⁇ Li X (K 1-Y Na Y ) 1-X ⁇ (Nb 1-Z-W Ta Z Sb W )O 3 .
- Such a main component can be provided by preparing raw materials containing each metal element as the raw material, and then the materials being sufficiently blended by, for example, a ball mill.
- Raw materials for the main component include, for example, Li 2 CO 3 , Li 2 O, LiNO 3 , and LiOH as a Li containing compound; Na 2 CO 3 , NaHCO 3 , and NaNO 3 as a Na containing compound; K 2 CO 3 , KNO 3 , KNbO 3 , and KTaO 3 as a K containing compound; Nb 2 O 5 , Nb 2 O 3 , and NbO 2 as a Nb containing compound; Ta 2 O 5 as a Ta containing compound; and Sb 2 O 5 , Sb 2 O 3 , and Sb 2 O 4 as a Sb containing compound.
- the main component features a perovskite structure (ABO 3 ), and elemental constitution of the A site corresponds to K and Na or K, Na, and Li, and elemental constitution of the B site corresponds to Nb, Ta, and Sb.
- a composition of the perovskite structure becomes a perfect perovskite structure when the stoichiometric ratio between atoms constituting the A site and atoms constituting the B site is 1:1.
- a piezoelectric ceramic composition it may happen that, in particular, several percent of the amount of K, Na, Li or Sb volatilize during the calcination step, or all constituting elements vary in several percent during the production steps such as a mixing pulverization step or a granulation step. In other words, deviation from a stoichiometric composition is possible due to variation in production.
- an intentional alteration of the ratio of composition of compounded material enables the ratio of the composition of the sintered piezoelectric ceramic composition to vary by ⁇ several percent, specifically by ⁇ 3-5%.
- a similar alteration may be done to, for example, the conventional lead zirconium titanate (PZT), and the compounding ratio may be regulated in consideration of vaporization of lead during sintering or incorporation of zirconia from zirconia balls which is a pulverization medium.
- PZT lead zirconium titanate
- the piezoelectric ceramic composition incorporating the main component of the present embodiment electrical characteristics such as piezoelectric properties do not vary largely, even if the ratio of composition of compounded material is intentionally altered in such a way as mentioned above. Therefore, in the present invention, when the main components are fitted to the composition formula ABO 3 of a perovskite structure, the constitution ratio of metal elements at the A and B sites can deviate from 1:1 by as much as about ⁇ 5 mol % for each site. In order to achieve high electrical characteristics by allowing the amount of lattice defects in a constituted crystal to be reduced, the amount of the deviation of the constitution ratio of the composition is preferably about ⁇ 3%.
- the calcination of the resulting piezoelectric ceramic composition can be more readily carried out, and at the same time, the piezoelectric properties thereof can be enhanced and Curie temperature Tc can be further increased.
- the reason for it is that by allowing the Li to be the essential component within the aforesaid range, the sintering temperature can be decreased, and, at the same time, Li plays the role of a sintering additives whereby sintering to produce a less void substance can be achieved.
- the main component is represented by (K 1-Y Na Y )(Nb 1-Z-W Ta Z Sb W )O 3 . Since the piezoelectric ceramic composition incorporating such a main component does not contain the lightest metal element of Li as a lithium compound, such as LiCO 3 in their raw materials, variation in properties due to segregation of raw material powder is allowed to be small, when the raw materials are blended to produce the aforesaid piezoelectric ceramic composition. In addition, a high relative dielectric constant ⁇ r as well as a relatively large piezoelectric constant may be realized.
- the sub-component of the present embodiment is represented by formula ABO 3 , and is a perovskite compound of the ABO 3 type, wherein A represents a metal element having a valence of +3 or a combination of metal elements having a valence of +3 on average, and B represents a metal element having a valence of +3 or a combination of metal elements having a valence of +3 on average. It is preferable that the A in the sub-component contains element Bi, and the B contains at least one of elements of Fe, In, Sc, Y, and Mn.
- the amount of the sub-component to be added is preferably less than 1 mol % pet 100 mol % of the piezoelectric ceramic composition after the sub-component has been added.
- the sub-component represented by the above formula may be added to the main component in the form of a compound constituting a perovskite compound of the ABO 3 type, or the sub-component may be added in the step where the sub-component is blended with the main component in the form of a combination of raw materials which will become an ABO 3 type perovskite compound.
- Compounds which constitute a perovskite structure include BiInO3, BiScO3, BiFeO 3 , BiMnO 3 , and BiYO 3 .
- Raw materials which can become an ABO 3 type perovskite compound at the blending step include; Bi 2 O 3 as a Bi containing compound; In 2 O 3 as an In containing compound; Sc 2 O 3 as a Sc containing compound; Fe 2 O 3 as an Fe containing compound; MnO 2 , Mn 2 O 3 , Mn 2 O 5 , Mn 3 O 4 , and MnCO 3 as a Mn containing compound; and Y 2 O 3 as an Y containing compound.
- Highly pure raw materials of at least 99% are preferred.
- the sub-component of the present invention is an ABO 3 type perovskite compound, and the metal elements which constitute the A site preferably contains Bi, and other metal elements include those having a valence of +3 such as La.
- Metal elements which constitute the B site include Fe, In, Sc, Ga, Dy, Er, Gd, Ho, Sm, Y, Yb, Al, Mn, and Cr.
- Metal elements which constitute the A and B sites of the sub-component are not limited to one metal element but may be a combination of at least two metal elements.
- the constitution of the A site may be replaced by Bi or another metal element having a valence of +3 such as La, Ce, Nd, Gd, Pu, Fe or a combination of metal elements having an average valence of +3.
- a part of the constitution of the B site may be replaced by a metal element having a valence of +3 or a combination of metal elements having an average valence of +3.
- raw materials of the sub-component may be compounded in a stoichiometric ratio of 1:1 between elements constituting the A site and elements constituting the B site to form ABO 3 , or the stoichiometric ratio may be allowed to vary by ⁇ several percent in consideration of variation during production such that the metal element such as Bi vaporizes during the sintering step.
- the production method of the piezoelectric ceramic composition of the present invention and the piezoelectric substance employing the piezoelectric ceramic composition will be described.
- the production method of the piezoelectric substance is not particularly limited, but the production method via a solid phase thermochemical reaction will be described.
- raw materials of the main component are prepared and fully dried.
- the dried raw materials, the weight of each of which being in the stoichiometric ratio of ABO 3 are blended via a ball-mill, and then dried.
- the resulting mixture is calcined at 800-1,000° C. to decompose and solidify the raw materials via a solid phase thermochemical reaction.
- the resulting calcined mixture is wet-milled into fine particles having a center of the particle size distribution of about 5 ⁇ m, and is dried to produce a calcined powder of the main component.
- raw materials of the sub-component are prepared and fully dried.
- the dried raw materials the weight of each of which being in the stoichiometric ratio of ABO 3 , are subjected to wet mixing to produce a mixed powder of the sub-component.
- the calcined powder of the main component and the mixed powder of the sub-component are compounded so that “V” falls within the range of 0 ⁇ V ⁇ 0.01 in formula [ ⁇ Li X (K 1-Y Na Y ) 1-X ⁇ (Nb 1-Z-W Ta Z Sb W )O 3 ] z-V (ABO 3 ) V .
- the compounded material is fully blended via, for example, a ball-mill, and then dried to produce a blended substance.
- the resulting blended substance is calcined at 700-800° C., and then the calcined powder is pulverized.
- An organic bonding agent such as a binder is added to the pulverized substance, which is then granulated and subjected to a pressure molding.
- the aforesaid pressure molding is preferably carried out in such a manner that the granulated substance made of the above pulverized substance is molded into the form of pellets via uniaxial pressing, and then the resulting pellets are re-molded via a cold isostatic press.
- the compact thus obtained are sintered at 1,000-1,300° C. to produce a sintered product.
- the resulted sintered product is cut to a predetermined size, which is then subjected to a parallel grinding to form electrodes via sputtering on both sides thereof.
- a parallel grinding to form electrodes via sputtering on both sides thereof.
- direct current voltage of 1-6 kv/mm is applied between the electrodes to polarize them in the thickness direction to produce a piezoelectric substance.
- the piezoelectric ceramic composition of the present embodiment addition of at least two metal elements as an sub-component in a combination represented by ABO 3 (where the A site contains Bi, and the B site contains at least one of Fe, In, Sc, Y, and Mn) having a perovskite structure, significantly increases remanent polarization of the resulting piezoelectric ceramic composition, to result in improved piezoelectric properties.
- ABO 3 where the A site contains Bi, and the B site contains at least one of Fe, In, Sc, Y, and Mn
- the reason for such improvement is considered to be that when Bi is added in a form of Bi 2 O 3 alone, the valence of Bi becomes +5, and the B site tends to be replaced by the Bi, while when Bi is added in a form of a combination of ABO 3 (for example, BiFeO 3 ) which is known to have a perovskite structure, the valence of Bi becomes +3, and the A site tends to be replaced by the Bi.
- ABO 3 for example, BiFeO 3
- a piezoelectric substance employing a piezoelectric ceramic composition having a large remanent polarization such as shown in the present embodiment is also usable as a memory element.
- the aforesaid piezoelectric substance is also usable as a memory device by applying voltage individually on a plurality of arranged piezoelectric elements.
- the aforesaid piezoelectric substance is usable as a rewritable memory in such a manner that writing is conducted by supplying a drive signal in accordance with information to be recorded, and reading is conducted upon detecting the direction of polarization.
- Relative dielectric constant of the piezoelectric ceramic composition of the present embodiment can be increased by increasing the additive amount of the sub-component. Therefore, it is possible to manufacture a piezoelectric substance exhibiting an excellent relative dielectric constant, and the manufactured piezoelectric substance can be used as a capacitor having large capacitance-Further, piezoelectric d-constant of the piezoelectric ceramic composition of the present embodiment can be increased in the following ways: BiInO 3 or BiFeO 3 as an sub-component is added in an amount of 0.6 mol % as in formula ⁇ Li 0.04 (K 0.48 Na 0.52 ) 0.96 ⁇ (Nb 0.84 Ta 0.1 Sb 0.06 )O 3 ; BiFeO 3 as an sub-component is added in an amount of 0.2-0.6 mol % as in formula ⁇ Li 0.2 (K 0.5 Na 0.5 ) 0.8 ⁇ (Nb 0.84 Ta 0.1 Sb 0.06 )O 3 ; and BiFeO 3 as an sub-
- the piezoelectric substance employing such a piezoelectric ceramic composition exhibits high sensitivity, it can be utilized as a piezoelectric actuator or a piezoelectric filter exhibiting high electromechanical energy conversion efficiency.
- the piezoelectric element which is manufactured by employing the piezoelectric ceramic composition of the present invention, can be utilized not only as a piezoelectric element of a recording head of an inkjet system but also in apparatuses such as a memory, a capacitor, a sensor, and a light modulator.
- the sintering of the piezoelectric ceramic composition of the present embodiment can be carried out under normal atmospheric pressure, whereby the piezoelectric substance can be readily manufactured. Further, the composition on of the piezoelectric ceramic composition of the present embodiment can be readily controlled by only adding a main component mixed with a sub-component.
- the piezoelectric ceramic composition contains no lead in its composition, there is no chance of leaching of the harmful lead from waste into the environment, whereby it is possible to provide a highly safe lead-free piezoelectric ceramic composition.
- the compounded raw materials were blended via a ball mill in anhydrous acetone over 24 hours, and then dried to produce a mixture.
- the aforesaid mixture was calcined at 750° C. over 5 hours, which mixture was then subjected to pulverization via a ball mill over 24 hours.
- the pulverized mixture was dried to produce a calcined powder of the main component.
- three compositions were prepared in the same way as in that of BiInO 3 .
- samples in which BiScO3, as a sub-component, was added are denoted as numbers 6, 7, 8, and 9 in the order of added amount
- samples in which BiFeO 3 as a sub-component was added are denoted as numbers 10, 11, 12, and 13 in the order of added amount.
- composition in which each component was compounded was mixed via a ball mill in anhydrous acetone over 24 hours, and then dried to produce a mixture.
- the aforesaid mixture was calcined at 700-800° C. over 5 hours, which was then subjected to pulverization via a ball mill over 24 hours.
- polyvinyl butyral as a binder was added thereto, and then the mixture was granulated and subjected to pressure molding.
- the pressure molding was carried out in such a manner that the granulated substance, made of the pulverized substance, was molded in the form of pellets via uniaxial pressing, and then the resultant pellets were re-molded via a cold isostatic press (CIP) at a pressure of 1 ton/cm 2 .
- CIP cold isostatic press
- the compact thus produced were sintered at 1,000-1,300° C. over one hour to produce a sintering product.
- the temperature, at which the highest density thereof was yielded, was selected from temperature between 1,000-1,300° C. as the sintering temperature.
- a highly dense sintered substance was not provided from a mixture exhibiting the aforesaid formula of ⁇ Li 0.04 (K 0.48 Na 0.52 ) 0.96 ⁇ (Nb 0.84 Ta 0.1 Sb 0.06 )O 3 to which the amount of the sub-component added was 1 mol %.
- the obtained calcination product was cut to a predetermined size, which was then subjected to parallel grinding to reach about 0.5 mm in thickness, followed by formation of gold electrodes via sputtering on both sides thereof. Subsequently, direct current voltage of 1-6 kV/mm was applied between the electrodes to be polarized in the thickness direction to produce a piezoelectric substance.
- a piezoelectric d 31 constant, Curie temperature Tc, relative dielectric constant ⁇ r , and the P-E hysteresis characteristics were determined on Sample numbers 1-20.
- the piezoelectric d 31 constant was determined via a resonance-anti-resonance method employing an impedance analyzer (type 4294A: manufactured by Agilent Technologies Inc.).
- Relative dielectric constant ⁇ r was determined employing an impedance analyzer (type 4294A: manufactured by Agilent Technologies Inc.) at a measuring frequency of 100 kHz.
- Curie temperature Tc was taken as a temperature at which the relative dielectric constant 8, exhibited its highest value.
- the P-E hysteresis characteristics were determined at room temperature via the Evaluation System of Characteristics of Ferroelectric Substance (a product of Agilent Technologies Inc.). The results of which are shown in Tables 1 and 2.
- the P-E hysteresis characteristics were determined for Sample numbers 1 and 12 by applying voltages of 1, 2, 3, 4, and 5 kV. The results are shown in FIG. 1 .
- the term “remanent polarization” refers to a magnitude of polarization when the electric field is reversed, that is, when applied electric field intensity becomes 0 kV/cm. In FIG. 1 , “remanent polarization” corresponds to an amount of polarization at an intersection point of the hysteresis loop with the Y axis (the line at 0 kV/cm of the electrical field intensity).
- the piezoelectric substances manufactured from the piezoelectric ceramic compositions of the present invention exhibit significantly little leakage current during the polarization treatment, resulting in efficient polarization treatment.
- the crystalline phase of the resulted sintered substance was identified via powdered XRD analysis.
- the generation of a solid solution in the sintered substance composed of the piezoelectric ceramic composition of the present invention was confirmed from the fact that the diffraction peak was indicative of single-phase structure of a perovskite and successively shifted with the increase of the amount of the sub-component.
- main components of formulae of ⁇ Li 0.04 (K 0.48 Na 0.52 ) 0.96 ⁇ (Nb 0.84 Ta 0.1 Sb 0.06 )O 3 , ⁇ Li 0.2 (K 0.5 Na 0.5 ) 0.8 ⁇ (Nb 0.84 Ta 0.1 Sb 0.06 )O 3 , and ⁇ Li 0.1 (K 0.5 Na 0.5 ) 0.8 ⁇ (Nb 0.84 Ta 0.3 Sb 0.3 Sb 0.06 )O 3 were employed, but any appropriate main components can be employed, and will provide the similar effects as long as they are of a formula of ⁇ Li X (K 1-Y Na Y ) 1-X ⁇ (Nb 1-Z-W Ta Z Sb W )O 3 , wherein x, y, z and w are within the ranges of 0 ⁇ x ⁇ 0.2, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 0.4, and 0 ⁇ w ⁇ 0.2 respectively.
- a sub-component was added as a form of mixed powder, but addition of a sub-component as calcined powders which was produced in advance by calcined the raw materials for the sub-component, also provides similar effects.
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JP4931148B2 (ja) * | 2007-10-02 | 2012-05-16 | 富士フイルム株式会社 | ペロブスカイト型酸化物積層体及び圧電素子、液体吐出装置 |
JP5267971B2 (ja) * | 2008-03-21 | 2013-08-21 | 国立大学法人金沢大学 | 強誘電体材料及び圧電体 |
JP4987815B2 (ja) | 2008-07-28 | 2012-07-25 | 日本碍子株式会社 | 圧電/電歪磁器組成物の製造方法 |
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JP5605545B2 (ja) * | 2009-08-19 | 2014-10-15 | セイコーエプソン株式会社 | 液滴噴射ヘッド、液滴噴射装置、圧電素子およびセラミックス |
JP5605544B2 (ja) | 2010-03-10 | 2014-10-15 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、並びに圧電素子及び圧電材料 |
KR101411221B1 (ko) * | 2012-03-02 | 2014-06-23 | 혼다덴시 가부시키가이샤 | 압전 자기 조성물 및 그 제조방법 |
JP5934927B2 (ja) * | 2012-05-10 | 2016-06-15 | 本多電子株式会社 | 圧電磁器組成物 |
JP2013179318A (ja) * | 2013-04-08 | 2013-09-09 | Seiko Epson Corp | 圧電材料、液体噴射ヘッドおよび液体噴射装置 |
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US20040058797A1 (en) * | 2002-07-16 | 2004-03-25 | Tatsuhiko Nonoyama | Piezoelectric ceramic composition and method of production of same, piezoelectric element, and dielectric element |
JP2004244300A (ja) | 2003-01-23 | 2004-09-02 | Denso Corp | 圧電磁器組成物及びその製造方法,並びに圧電素子及び誘電素子 |
JP2004244301A (ja) | 2003-01-23 | 2004-09-02 | Denso Corp | 圧電磁器組成物及びその製造方法並びに圧電素子及び誘電素子 |
US20060006360A1 (en) * | 2004-06-17 | 2006-01-12 | Denso Corporation | Grain oriented ceramics and production method thereof |
JP2006028001A (ja) | 2004-06-17 | 2006-02-02 | Toyota Central Res & Dev Lab Inc | 結晶配向セラミックス、及びその製造方法 |
US7845768B2 (en) * | 2006-09-08 | 2010-12-07 | Konica Minolta Holdings, Inc. | Liquid droplet ejection head |
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US20100264354A1 (en) * | 2007-12-06 | 2010-10-21 | Konica Minolta Holdings, Inc. | Piezoelectric ceramic composition |
US8343376B2 (en) * | 2007-12-06 | 2013-01-01 | Konica Minolta Holdings, Inc. | Piezoelectric ceramic composition |
US20110002083A1 (en) * | 2009-07-06 | 2011-01-06 | Denso Corporation | Ceramic material and electronic device |
US8194392B2 (en) * | 2009-07-06 | 2012-06-05 | Denso Corporation | Ceramic material and electronic device |
US20110221829A1 (en) * | 2010-03-12 | 2011-09-15 | Seiko Epson Corporation | Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus |
US9209384B2 (en) | 2010-03-12 | 2015-12-08 | Seiko Epson Corporation | Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus |
US9318690B2 (en) | 2010-03-12 | 2016-04-19 | Seiko Epson Corporation | Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus |
Also Published As
Publication number | Publication date |
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CN101389580A (zh) | 2009-03-18 |
US20090020726A1 (en) | 2009-01-22 |
CN101389580B (zh) | 2012-02-22 |
WO2007099901A1 (ja) | 2007-09-07 |
EP1990326A4 (en) | 2012-04-25 |
EP1990326A1 (en) | 2008-11-12 |
JPWO2007099901A1 (ja) | 2009-07-16 |
EP1990326B1 (en) | 2015-09-30 |
JP5407330B2 (ja) | 2014-02-05 |
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