US3893325A - Process for manufacturing a base for a semiconductor device - Google Patents

Process for manufacturing a base for a semiconductor device Download PDF

Info

Publication number
US3893325A
US3893325A US486083A US48608374A US3893325A US 3893325 A US3893325 A US 3893325A US 486083 A US486083 A US 486083A US 48608374 A US48608374 A US 48608374A US 3893325 A US3893325 A US 3893325A
Authority
US
United States
Prior art keywords
blank
die
base
knockout
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US486083A
Other languages
English (en)
Inventor
Yoshio Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7705173A external-priority patent/JPS5116300B2/ja
Priority claimed from JP13072773A external-priority patent/JPS5132954B2/ja
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of US3893325A publication Critical patent/US3893325A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4878—Mechanical treatment, e.g. deforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • tor device having a recess in the base on the upper surface to receive semiconductor means therein and a threaded stem extending from the bottom surface of the base, said process comprising the steps of preparing a blank of metal material; deforming by extrusion said blank with a shallower recess portion formed in said blank on the upper surface and with a shorter stem portion extending from the bottom of said blank while forming a projection on the bottom of said shallow recess portion in said blank; further deforming said blank so that said recess portion in said blank is deepened whereby said recess is formed in said base and so that said stem portion is lengthened whereby an unthreaded stem is formed; and threadedly rolling said stem on said blank.
  • This invention pertains generally to a process for manufacturing a base for a semiconductor device and more particularly to a process for manufacturing a base for a semiconductor device such as diode, thyristor and the like having a recess in the base on the upper surface to receive semiconductor means therein and a threaded stem extending from the bottom surface of the base and adapted to mount the base on a chassis of an electronic apparatus.
  • a base for a semiconductor device with a recess in the base on the upper surface to receive a semiconductor element or enclosure therein and with a threaded stem extending from the bottom surface of the base has been manufactured by deforming by extrusion a blank of metal material with a stem extending from the bottom of the blank, subsequently further deforming the blank with a recess formed in the blank on the upper surface to receive a semiconductor element or disclosure therein and shaping such deformed blank on the periphery thereof so that it has a hexagonal configuration.
  • One of the disadvantages of the prior art is that there is formed a cavity or hole in the middle of the blank on the upper surface due to material stream flowing from the peripheral circumference towards the center of the blank as shown in FIG. 16 when the stem is formed by deforming the blank. As seen from FIG. 16, such cavity is extremely deep and therefore, an acid agent, which is used to pickle the blank prior to the plating process, tends to be left in the cavity, resulting in the acid agent unpreferably blowing off on plating.
  • Another disadvantage is that there are required two deforming steps for providing the base with the result in its costly manufacture.
  • the base is generally formed of composite or clad metal including a lower or thermally and electrically conductive metal layer and an upper or weldable metal layer attached onto the lower metal layer.
  • the upper metal layer at the center is generally removed after the recess to receive the pellet therein is formed in the blank of composite metal. Removal of the lower metal layer at the center has been effected by spot facing. However, such removal of the upper metal layer at the bottom of the recess is extremely troublesome because the operation must be done in the narrow space.
  • the prior art is not adapted to manufacture various bases which have the recesses of different sizes therein.
  • a process for manufacturing a base for a semiconductor device having a recess in the base on the upper surface to receive semiconductor means therein and a threaded stem extending from the bottom surface of the base comprising the steps of preparing a blank of metal material; deforming by extrusion said blank with a shallower recess portion formed in the said blank on the upper surface and with a shorter stem portion extending from the bottom of said blank while forming a projection on the bottom of said shallow recess portion in said blank; further deforming said blank so that said recess portion in said blank is deepened whereby said recess is formed in said base and so that said stem portion is lengthened whereby an unthreaded stem is formed; and threadedly rolling said stem on said blank.
  • an extrusion die assembly for manufacturing a base for a semiconductor device having a recess in the base on the upper surface to receive semiconductor means therein and a threaded stem extending from the bottom of the base, said extrusion die assembly comprising a first die having a knockout with a knockout pin telescopically extending through said knockout, said first die having a cavity to receive said blank therein, a second die movable relative to said first die to strike against a blank in said cavity in said lower die, said knockout pin serving to form a projection in said recess portion by retraction of said knockout pin during the initial portion of the time when said second die moves into said first die.
  • an extrusion die assembly for manufacturing a base for a semiconductor device having a recess in the base on the upper surface to receive semiconductor m'eans therein and a threaded stem extending from the bottom of the base, said extrusion die assembly comprising a first die having a knockout with a knockout pin telescopically extending through said knockout, said first die having a cavity to receive a blank therein, and a second die movable relative to said first die to strike against said blank in said cavity in said first die, said knockout and said knockout pin at the heads thereof having a shallow concave allowing a projection to be formed at the bottom of the said recess in said blank.
  • FIG. 1 is a vertical sectional view of a semiconductor device having a base manufactured in accordance with the present invention
  • FIGS. 2 to 7 are vertically sectional views illustrating the sequential steps of processing material for manufacturing the base of FIG. 1 in accordance with the present invention
  • FIG. 8 shows in vertical section an extrusion die assembly in a press in which material is deformed
  • FIG. 9 shows in enlarged vertical section another extrusion tile assembly in a press in which material is deformed
  • FIG. I is a vertically sectional view of another semiconductordevice having a base manufactured in accordance with the present invention.
  • FIGS. 11 to are vertically sectional views illustrating the sequential steps of processing material for manufacturing the base of the semiconductor device of FIG. 10 in accordance with the present invention.
  • FIG. 16 is an enlarged cross sectional view of a portion of a conventional base for a semiconductor device.
  • a semiconductor device is indicated generally at numeral 10 and has a base 12 obtained by a process in accordance with the present invention.
  • the base 12 has a recess 14 in which a semiconductor element or pellet 16 is disposed and mounted at the bottom of the recess 14 and a threaded stem I8 extending downwardly from the lower surface of the base 12.
  • the threaded stem 18 serves to secure the semiconductor device 10 to a chassis of an electronic apparatus by threadedly engaging the stem I8 with the chassis and to radiate heat from the semiconductor device through the chassis.
  • a shell 20 at the flange is welded onto the base at the periphery and has a terminal 22 hermetically sealed and mounted in the shell 20 and connected by a lead 24 to the pellet 16.
  • the base com prises a thermally and electrically conductive metal layer 26 and a weldable metal layer 28 affixed onto the metal layer 26.
  • the shell 20 is welded on the weldable metal layer 28 of the base 12.
  • FIGS. 2 to 7 show the sequential steps for manufacturing the base 12 of the semiconductor device 10 shown in FIG. I.
  • FIG. 2 shows a circular blank 30 which is obtained by blanking or punching a clad or composite metal sheet (not shown) into .a plurality of blanks each having a predetermined dimension.
  • the clad metal sheet comprises a lower or thermally and electrically conductive metal layer such as copper layer having a relatively larger thickness and an upper or weldable metal layer such as cupronickel layere attached onto the lower metal layer and having a relatively smaller thickness.
  • numerals 32 and 34 designate the lower and upper metal layers, respec tively.
  • the upper metal layer 34 in the middle is spot faced as shown in FIG. 3 so that the lower metal layer is partially exposed in the middle of the blank 30.
  • Numeral 32a indicates the exposed surface of the lower metal layer 32.
  • the die assembly comprises a lower die 38 having a cavity 38a to receive the blank 30 therein and an upper die or punch 40 vertically movable by means of a ram of the press (not shown) and adapted to be received into, the lower die for purpose of deforming the blank in the lower die.
  • the cavity 380 in the lower die 38 is of hexagonal configuration according tojthat of the desired base.
  • the lower die 38 has a knockout 42 extending through the lower die 38 in a coaxial relation to the cavity 38a to remove the deformed blank out of the lower die 38 and in addition serving as an auxiliary die to form a recess in the base as indicated at numeral 14 in FIG. 1.
  • a knockout pin 44 telescopically extends through a center hole 420 in the knockout 42 for thrusting the deformed blank out of the lower die 38 and axially and upwardly urged by a spring not shown.
  • the punch 40 at the bottom thereof has a cavity 400 which is adapted to form a stem on the blank which is in turn threadedly rolled later as indicated at numeral 18 in FIG. 1.
  • the blank 30 in the lower die 38 is deformed as shown in FIGS. 4 through 6. More particularly, the blank 30 is formed with a relatively shallower recess portion 14A in the blank 30 on one of the surfaces and with a relatively shorter stem portion 18A on the other surface of the blank during the initial portion of downward movement of the punch 40. It should be noted that at that time a fine projection 14] is formed on the shallow recess MA at the center of the bottom because the knockout pin 42a is momentarily retracted relative to the knockout 42 by the pins bouncing against the spring urging the pin 42a.
  • the blank 30 is further deformed so that the recess portion 14A in the blank is increasingly deepened and also so that the stem portion 18A is increasingly lengthened. Meanwhile, the fine projection 14] becomes gradually smaller or penetrated into the bottom of the recess portion 14A.
  • the blank 30 is further deformed in a similar manner until the recess has a predetermined depth and the stem 18' has a predetermined length as shown in FIG. 6. It will be noted from FIG. 6 that the fine projection 114 is completely penetrated into the bottom of the recess in the blank 30 so that the recess 14 has a flat surface. This means that the cavity, which otherwise tends to be formed in the recess bottom (FIG.
  • FIG. 9 shows a modification of the extrusion die assembly wherein the same numerals indicate the same components.
  • the die assembly 36 is substantially identical to that of FIG. 8 except that the knockout 42 and the knockout pin 44 at the heads thereof have a smooth shallow concave 46.
  • the concave 46 in the knockout and the knockout pin causes the blank 30 to be deformed with a projection 114' indicated at dotted line shown in FIG. 4 and formed on the recess bottom of the blank 30 during the initial portion of movement of the punch 40.
  • the projection 114' is penetrated into the recess bottom of the blank in the course of continued downward movement oof the punch until'the recess bottom of the deformed blank has a flat surface.
  • the base can be manufactured without any cavity in the recess bottom of the base. which is substantially identical to that of FIG. 8 with this respect.
  • a semiconductor device is indicated generally by numeral 210, which comprises a base 212 including a recess 214 in the base on the upper surface to receive a semiconductor assembly 216 therein, and a threaded stem 218 extending from the bottom of the base.
  • the semiconductor assembly 216 may comprise an enclosure 234 including a base plate 236 and a shell 220 at the flange welded to the edge of the base plate 236.
  • a semiconductor element or pellet 216 is mounted on the base plate 236 within the enclosure 234 and a terminal 222 is hermetically sealed to the shell 220 and connected by a lead 224 to the pellet 216.
  • the base is formed of thermally and electrically conductive metal such as copper.
  • the enclosure 234, within which the pellet is mounted, is disposed within the recess 214 in the base 212 and attached thereto by any suitable means. Since the base plate may be formed of relatively thinner weldable metal such as steel iron, the current and heat from the pellet 216 can flow through the base plate 236 to the base 212 without any substantial resistance.
  • FIGS. 11 to 16 show the sequential steps for forming by extrusion the base 212 of the semiconductor device 210 shown in FIG. 10. Since the base is formed of a single metal layer rather than of composite or clad metal, the step of removal of the upper metal layer as shown in FIG. 3 is eliminated, but the other steps are substantially identical to those of FIGS. 2, 4, 5 and 6. More particularly, a blank 230 of copper as shown in FIG. I] is prepared which is obtained by punching a metal sheet into a plurality of blanks. The blank 230 is then introduced into the extrusion die assembly as shown in FIG. 8 to be deformed in the manner as shown in FIGS. 12 to 15.
  • the blank 230 is deformed so that it has a relatively shallower recess portion 214A in the blank on the upper surface and also a relatively shorter stem portion 218A on the bottom of the blank, but at that time, it should be noted that the recess portion has a fine projection 314 at the center of the bottom of the recess portion.
  • the blank continues to be deformed so that the recess portion 214A becomes deeper and the stem portion 218A longer with the fine projection 314 penetrated into the bottom of the recess portion 214A at the center thereof.
  • the blank is completely deformed until the recess portion 214A has a predetermined depth and the stem portion 218A has a predetermined length as shown in FIG. 14.
  • FIG. 15 shows the base 212 thus provided with the recess 214 to receive the semiconductor assembly therein and the threaded stem 218 which is adapted to threadedly engage a chassis of an electronic apparatus.
  • the blank 230 may be introduced into the extrusion die assembly shown in FIG. 9 for deformation of the blank. It will be also noted that in such case a projection 314 indicated at dotted line in FIG. 12 is formed and there after filled in the cavity which otherwise tends to be formed at the center of the recess portion 214A during deformation of the blank 230.
  • a process for manufacturing a base for a semiconductor device having a recess in the base on the upper surface to receive semiconductor means therein and a threaded stem extending from the bottom of the base comprising the steps of preparing a blank of metal material; deforming by extrusion said blank with a shallower recess portion formed in said blank on the upper surface and with a shorter stem portion extending from said blank at the bottom while forming a projection on the bottom of said shallower recess portion in said blank; further deforming said blank so that said recess portion in said blank is deepened whereby said recess is formed in said base and so that said stem portion is lengthened whereby an unthread'ed stem is formed; and threadedly rolling said stem on said blank.
  • An extrusion die assembly for manufacturing a base for a semiconductor device having a recess on the upper surface of the base to receive semiconductor means therein and a threaded stem extending from the bottom of the base.
  • said extrusion die assembly comprising a first die having a knockout with a knockout pin telescopically extending through said knockout, said first die having a cavity to receive a blank therein, and a second die movable relative to said first die to strike against said blank in said cavity in said first die, said knockout pin serving to form a projection in said recess portion by retraction of said knockout pin during the initial portion of the time when said second die moves into said first die.
  • An extrusion die assembly for manufacturing a base for a semiconductor device having a recess on the upper surface of the base to receive semiconductor means therein and a threaded stem extending from the bottom of the base.
  • said extrusion die assembly comprising a first die having a knockout with a knockout pin telescopically extending through said knockout, said first die having a cavity to receive a blank therein, a second die movable relative to said first die to strike against said blank in said cavity in said first die, said knockout and said knockout pin at the heads thereof having a shallow concave allowing a projection to be formed at the bottom of said recess in said blank.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Forging (AREA)
  • Shaping Metal By Deep-Drawing, Or The Like (AREA)
US486083A 1973-07-10 1974-07-05 Process for manufacturing a base for a semiconductor device Expired - Lifetime US3893325A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7705173A JPS5116300B2 (nl) 1973-07-10 1973-07-10
JP13072773A JPS5132954B2 (nl) 1973-11-22 1973-11-22

Publications (1)

Publication Number Publication Date
US3893325A true US3893325A (en) 1975-07-08

Family

ID=26418154

Family Applications (1)

Application Number Title Priority Date Filing Date
US486083A Expired - Lifetime US3893325A (en) 1973-07-10 1974-07-05 Process for manufacturing a base for a semiconductor device

Country Status (4)

Country Link
US (1) US3893325A (nl)
FR (1) FR2236572B1 (nl)
GB (1) GB1467168A (nl)
NL (1) NL7409192A (nl)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287747A (en) * 1978-07-18 1981-09-08 Nissan Motor Co., Ltd. Process of closed extrusion shaping of a metal rod material and an apparatus therefor
US4341106A (en) * 1977-04-13 1982-07-27 Gleason Works Apparatus for controlling the movement of a reciprocatory hydraulically driven element of a metal forming machine
US4342213A (en) * 1980-01-17 1982-08-03 Nissan Motor Co., Ltd. Closed chamber extrusion method and apparatus for shaping of metal rod into tulip-shaped part
US5950858A (en) * 1993-02-18 1999-09-14 Sergeant; David Robert Container end closure
CN1060415C (zh) * 1997-04-25 2001-01-10 张应宪 钢法兰毛坯制造新工艺
US20040123639A1 (en) * 2000-04-10 2004-07-01 Anderson Russell J. Making integral heat spreader by coining
CN105499463A (zh) * 2015-12-28 2016-04-20 无锡透平叶片有限公司 一种带预应力压边的大型矩形模座结构

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4192063A (en) * 1975-12-10 1980-03-11 Yoshio Sato Method for manufacturing a base of a semi-conductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3186209A (en) * 1960-04-14 1965-06-01 Nat Machinery Co Method of cold forming an elongated hollow article
US3417597A (en) * 1967-02-06 1968-12-24 Francis S. Napoli Weld stud
US3759080A (en) * 1971-06-14 1973-09-18 Tokai Rika Co Ltd Cold forcing method and apparatus for producing a terminal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3186209A (en) * 1960-04-14 1965-06-01 Nat Machinery Co Method of cold forming an elongated hollow article
US3417597A (en) * 1967-02-06 1968-12-24 Francis S. Napoli Weld stud
US3759080A (en) * 1971-06-14 1973-09-18 Tokai Rika Co Ltd Cold forcing method and apparatus for producing a terminal

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341106A (en) * 1977-04-13 1982-07-27 Gleason Works Apparatus for controlling the movement of a reciprocatory hydraulically driven element of a metal forming machine
US4287747A (en) * 1978-07-18 1981-09-08 Nissan Motor Co., Ltd. Process of closed extrusion shaping of a metal rod material and an apparatus therefor
US4342213A (en) * 1980-01-17 1982-08-03 Nissan Motor Co., Ltd. Closed chamber extrusion method and apparatus for shaping of metal rod into tulip-shaped part
US5950858A (en) * 1993-02-18 1999-09-14 Sergeant; David Robert Container end closure
CN1060415C (zh) * 1997-04-25 2001-01-10 张应宪 钢法兰毛坯制造新工艺
US20040123639A1 (en) * 2000-04-10 2004-07-01 Anderson Russell J. Making integral heat spreader by coining
US7506527B2 (en) * 2000-04-10 2009-03-24 Honeywell International, Inc. Making integral heat spreader by coining
CN105499463A (zh) * 2015-12-28 2016-04-20 无锡透平叶片有限公司 一种带预应力压边的大型矩形模座结构
CN105499463B (zh) * 2015-12-28 2018-10-02 无锡透平叶片有限公司 一种带预应力压边的大型矩形模座结构

Also Published As

Publication number Publication date
GB1467168A (en) 1977-03-16
DE2432681B2 (de) 1976-06-16
FR2236572B1 (nl) 1978-01-20
FR2236572A1 (nl) 1975-02-07
NL7409192A (nl) 1975-01-14
DE2432681A1 (de) 1975-01-30

Similar Documents

Publication Publication Date Title
EP0116877B1 (en) Method and apparatus of producing a stepped hollow article
US5237849A (en) Method of manufacturing fins for heat exchangers
US3893325A (en) Process for manufacturing a base for a semiconductor device
JP7530697B2 (ja) プレス加工品の製造方法
WO2018186214A1 (ja) カップ構造体の製造方法
US6442990B1 (en) Method of manufacturing a plate-shaped member having a recess and press die for forming recesses
US3377700A (en) Method of making electrical contact member
JPH01218729A (ja) 電磁クラッチ用ローター本体の製造方法
US6139975A (en) Sheet metal member, method of manufacturing same, and heat radiation plate
US4192063A (en) Method for manufacturing a base of a semi-conductor device
US3722080A (en) Method for producing the base of a semiconductor device
US3348297A (en) Method of manufacturing a mount for a semi-conductor device
US4124935A (en) Method for manufacturing a base of a pressure mount type semiconductor device
JP3664940B2 (ja) 外周ビードのプレス成形金型及び成形方法
JP2589384B2 (ja) 熱交換器用フィンの製造方法
JP2790941B2 (ja) 歯形を有する鍛造製品の製造装置
JP3429339B2 (ja) プレス装置
JPH07144244A (ja) 歯車鍛造品の鍛造金型及び歯車鍛造品の鍛造方法
JPH01266922A (ja) 放熱用等の金属部材の製造方法
JP2534940B2 (ja) 環状溝の塑性加工方法
JPH07142667A (ja) リードフレーム半導体素子搭載部のディンプルの形成方法
JPH0481232A (ja) 熱交換器用フィンの製造金型
JPH03128139A (ja) 熱交換器用フィンの製造用金型及びその製造法
JPS60115333A (ja) バ−リング加工方法
JPH025490B2 (nl)