US3875456A - Multi-color semiconductor lamp - Google Patents

Multi-color semiconductor lamp Download PDF

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Publication number
US3875456A
US3875456A US347660A US34766073A US3875456A US 3875456 A US3875456 A US 3875456A US 347660 A US347660 A US 347660A US 34766073 A US34766073 A US 34766073A US 3875456 A US3875456 A US 3875456A
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United States
Prior art keywords
light
emitting
diodes
scattering layer
layer
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Expired - Lifetime
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US347660A
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English (en)
Inventor
Tsuyoshi Kano
Tadashi Saitoh
Atsushi Suzuki
Teruki Suzuki
Shigekazu Minagawa
Yoshiro Otomo
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • G—PHYSICS
    • G08—SIGNALLING
    • G08G—TRAFFIC CONTROL SYSTEMS
    • G08G1/00—Traffic control systems for road vehicles
    • G08G1/09—Arrangements for giving variable traffic instructions
    • G08G1/095—Traffic lights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2111/00—Use or application of lighting devices or systems for signalling, marking or indicating, not provided for in codes F21W2102/00 – F21W2107/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • FIG. 1 A first figure.
  • FIG. 1 A first figure.
  • This invention relates to semiconductor lamps and more particularly, to multi-color semiconductor lamps capable of emitting light of many different colors from what appears to be a single light source.
  • a typical example of a multi-color indicating device is a traffic signal lamp device. It consists of three different light sources arranged side by side respectively emitting the lights of red, orange and green colors, these light sources being selectively and individually switched, on and off electrically, and the colors ofthese sources respectively indicating the condition of danger, caution and safety. Since the multi color indicating device of this type has the excellent function of permitting an observer to recognize various conditions instinctively, there are extensive applications for these devices such as for indicating the working state of apparatus, for indicating the occupancy of roads and seats, for indicating positive or negative signs of various values, for indicating whether some value is greater or less than a reference value and for indicating whether an input signal is correct or not.
  • prior-art multi-color indicating devices such as the afore-mentioned traffic signal lamp device usually use a separate light sources for each different color, and the individual light sources are located at different positions. Therefore, an undesirably large space is required for the whole device. Also, unless the device is located in a dark place, the light sources which are not emitting light are likely to be mistaken for those emitting light since they can reflect ambient light.
  • An ideal multi-color indicating device or lamp would be one from which light of two or more colors can be I emitted from an apparently single light source with the color selected by simple electric control. Such a light source, which would thereby occupy an optimally minimum amount of space, has not been practically available prior to the present invention.
  • An object of the present invention is to provide a novel and improved multi-color semiconductor lamp.
  • Another object of the invention is to provide a multicolor semiconductor lamp, which can emit light of dif ferent colors apparently from a single light source.
  • a further object of the invention is to provide a multi-color semiconductor lamp, which is capable of emitting light of different colors, but occupies smaller space and nevertheless permits to emit light in clear and distinct colors.
  • a plurality of lightemitting diodes individually capable of emitting the light of respectively different colors are disposed close to one another, and these light-emitting diodes are covered with a light scattering layer such that light from any one of this plurality of light sources corresponding to a respective color is seen as if emitted apparently from the same source or position, whereby multicolor indication with the respectively different colors of the individual light emitting diodes as well as blends of these colors may be obtained.
  • FIG. 1 is a cross-section of a first embodiment of the invention including multiple color light sources in a casing and lens module;
  • FIG. 2 is a cross-section of a second embodiment of the invention including an integrally formed modular casing and lens structure for multiple sources of visible light;
  • FIG. 3 is a cross-section of a modification of FIG. 2 in which multiple sources of invisible light and visible light producing layers of material are respectively associated with said sources in the integrally formed module of FIG. 2;
  • FIG. 4 is a cross-section of another modification of FIGS. 2 and 3 including at least one compound light source and another light source cooperating with a common light scattering layer in the modular structure of FIGS. 2 and 3', and
  • FIG. 5 is a cross-section of a further modification of FIGS. 2 and 3 in which the common light scattering layer for a plurality of light sources in the modular structure includes fluorescent materials.
  • a first preferred embodiment of the present invention is shown as including first and second conventional light-emitting diodes A and B, each containing a p-n junction capable of emitting light of a desired color.
  • the two diodes A and B are disposed closely adjacent one another on an internal surface of a common metal casing 1 such that ohmic contact is made between one side of each of the diodes A and B and the said casing 1. Both diodes are encased in a common light scattering layer 2 on the casing I.
  • the diodes A and B are respectively connected to external terminal leads 3 and 5 which extend through the casing 1 within respective insulating sleeves 11 and 12.
  • the internal ends of the terminal leads 3 and 5 are respectively connected through metal wires 3A and 5A to the other sides of the said diodes A and B, namely, those not in ohmic contact with the casing l.
  • a common terminal lead 4 for both diodes is conductively connected to the underside of the metal casing l.
  • a lens C is positioned over the light scattering layer 2 to confine the said layer and the diodes A and B within the said casing 1.
  • the light emitting diode A is energized to emit light of its chosen color by impressing an appropriate voltage between the input terminal leads 3 and 4 and the light emitting diode B is energized to emit light of its chosen color by impressing an appropriate voltage between the input terminal leads 4 and 5.
  • these diodes are so energized, either one at a time or concurrently, the resulting light emitted thereby is scattered in passing through the light scattering layer 2 so that all such emissions transmitted to the exterior of the casing 1 through the lens C appear to come from one and the same source.
  • FIG. 2 shows a modified construction in which like elements to FIG. I bear like numerals.
  • the casing I has an inner reflecting surfaces, and the light scattering layer 2 is covered with a transparent resin layer 6 having a lens-shaped outer surface L.
  • FIG. 3 shows another embodiment in which like elements to FIGS. I and 2 bear like numerals.
  • light emitting diodes A and B' for converting infrared rays to visible light respectively consisting of infrared luminescent diodes 7 and 8 covered with respective resin layers 9 and 10 each containing different phosphorescent powder are used in place of the conventional light emitting diodes A and B described in reference to FIG. 2.
  • These diodes and their respective resin layers 9 and 10 are covered with the light scattering layer 2 and transparent resin layer 6 as previously described with reference to FIG. 2.
  • FIGS. I to 3 While the constructions shown in FIGS. I to 3 have used two light-emitting diodes for emitting respectively different visible lights, similar effects may of course be obtained if three or more different light-emitting diodes are used.
  • colored light resulting from the blending of the individual colors from the respective light emitting diodes may be obtained by causing two or more of the said lightemitting diodes to simultaneously emit light.
  • the light-emitting diodes may be visible lightemitting diodes, or a combination of an infrared luminescent diode with a fluorescent material for emitting visual light in response to the infrared emissions.
  • the light scattering layer 2 of the several embodiments of the invention may comprise a ground glass body disposed in the position of the lens C of FIG. 1 or located between the light-emitting diodes A and B and the lens C.
  • the light scattering layer 2 may comprise fine alumina powder bonded with resin.
  • the light scattering layer 2 may comprise powdered phosphors (the fluo rescent material responsive to infrared emissions) bonded with resin.
  • a variety of combinations may be incorporated into the device; for instance it is possible to provide a device where a plurality of visible light-emitting diodes capable of emitting respectively different colored light are covered with a light-scattering layer, a device where a plurality of infrared luminescent diodes in combination with respective fluorescent powders capable of converting infrared rays into visible light of different colors are wholly covered with a light scattering layer, or a device where a visible light emitting diode and an infrared luminescent diode are covered with a fluorescent material for visualizing the infrared and scattering the visible light.
  • EXAMPLE I In the multi-color semiconductor lamp of FIGS. I and 2, a green light-emitting gallium phosphide diode is used as light-emitting diode A, a red light-emitting gallium phosphide diode is used as light-emitting diode 10 B. and an epoxy resin body containing fine powder of alumina is used as light scattering layer 2. Green light is emitted from the light-emitting diode A by impressing between the input terminal leads 3 and 4 an electric input of 3.5 volts and i0 milliamperes, and red light is emitted from the light emitting diode B by impressing between the input terminal leads 4 and 5 the same electric input. These emitted lights are projected through the lens C or the transparent resin layer 6 as the case may be.
  • the light-emitting diode A' comprises a light emitting diode in which an infrared luminescent gallium arsenide diode 7 is covered with a layer 9 consisting of sodium yttrium fluoride fluorescent powder activated with ytterbium and erbium and a resin bonded therewith; and the lightemitting diode B comprises a light emitting diode in which an infrared luminescent gallium arsenide diode 8 is covered with a layer 10 consisting of yttrium oxyfluoride phosphor powder activated with ytterbium and erbium and a resin bonded therewith.
  • the light scattering layer 2 is provided comprising a fine alumina powder bonded with resin and the fluorescent powder layers 9 and 10 together with the alumina powder layer 2 are covered with the epoxy resin layer 6.
  • Green light is emitted through the epoxy resin layer 6 by impressing an electric input of 1.2 volts and 50 milli' amperes between the input terminal leads 3 and 4 for the light-emitting diode A, and red light is emitted through the same layer by impressing an electric input of 1.2 volts and 100 millivolts between the input terminal leads 4 and 5 for the light emitting diode B.
  • EXAMPLE 3 A light emitting semiconductor lamp having a function similar to that of Example 2 is obtained by utilizing, in the fluorescent layer 10, yttrium oxychloride fluorescent powder activated with ytterbium and erbium in place of yttrium oxyfl uoride activated with ytterbium and erbium of Example 2.
  • EXAMPLE 4 milliamperes
  • This example is one modification of the lamp of FIG. 2 or FIG. 3, and is shown in FIG. 5, wherein the light emitting diode A is replaced by a red light-emitting gallium arsenide diode and the light-emitting diode B is replaced by a light emitting diode in which an infrared luminescent gallium arsenide diode is combined with the fluorescent layer 10 consisting of sodium yttrium fluoride fluorescent powder activated with ytterbium and erbium.
  • These light-emitting elements A and B are covered with a light scattering layer 2 of sodiumyttrium fluoride fluorescent powder activated with ytterbium and erbium, which is fixed with a polystyrene layer 6 covering it.
  • Red light is emitted through the polystyrene layer 6 by impressing an electric input of 1.7 volts and 20 milliamperes between the input terminal leads 3 and 4 for the light-emitting element A
  • green light is emitted through the same layer by impressing an electric input of 1.2 volts and 60 milliamperes between the input terminal leads 4 and 5 for the light-emitting element B.
  • the light scattering layer 2 and a fluorescent layer which contain the fluorescent powders serve the dual roles of both converting the wavelengths of light and scattering light.
  • This lamp is a modification of that of Example 2 in that a red light emitting diode A and an infrared emitting diode 8 are covered directly with a light scattering layer 2 containing powdered fluorescent material.
  • EXAMPLE 5 A light emitting semiconductor lamp having a function similar to that of Example 4 is obtained by using, in the fluorescent layer 10, yttrium fluoride fluorscent powder activated with ytterbium and erbium in place of sodium yttrium fluoride fluorescent powder activated with ytterbium and erbium.
  • EXAMPLE 6 A yellow light-emitting gallium phosphide diode is used as a third light-emitting diode (not shown) in addition to the two light-emitting diode A and B' of Example 4. Red light is emitted by impressing an electric input of 1.7 volts and 20 milliamperes between the input terminal leads 3 and 4 for the light-emitting diode A, while green light is emitted by impressing an electric input of 1.2 volts and 60 milliamperes between the input terminal terminal leads 4 and 5 for the lightemitting diode B, and yellow light is emitted by impressing an electric input of 3.5 volts and 10 milliamperess between the input terminal lead 4 and a similar additional input lead (not shown) extending through the casing 1 like the leads 3 and 5, for the said third light-emitting element.
  • EXAMPLE 7 1n the lamp of Example 2, green light is emitted by impressing an electric input of 1.2 volts and 50 milliamperes between the input leads 3 and 4 for the lightemitting diode A', while red light is emitted by impressing an electric input of 1.2 volts and 100 milliamperes between the input leads 4 and 5 for the light emitting diode B, and yellow light is emitted by simultaneously impressing an electric input of 1.2 volts and 40 milliamperes between the input leads 3 and 4 for the lightemitting diode A' and an electric input of 1.2 volts and 80 milliamperes between the input leads 4 and 5 for the light emitting diode B.
  • EXAMPLE 8 This example is realized by using the construction as shown in FIG. 2, but a light-emitting diode having two p-n junctions is used as one of the two light-emitting elements for three-color emission, as will be described with reference to FIG. 4.
  • light emitting-diode A" is constituted by a conventional light emitting gallium phosphide diode, and light emitting diode B" is composed of a GaAs crystal doped with Si and a GaAs P crystal, each said crystal containing a p-n junction.
  • Lightscattering layer 2 is formed by hardening a coating of epoxy resin containing yttrium fluoride fluorescent powder activated with ytterbium and erbium.
  • the crystal 13 makes ohmic contact with the casing 1 and its p-n junction makes ohmic contact with the crystal 14.
  • the p-n junction of the crystal 14 is connected with the metal wire 5A from the input terminal lead 5 and the crystal 14 is connected with a metal wire 5A extending from an input terminal lead 5' extending through the casing 1 via an insulating sleeve 12' in the same manner as the input terminal leads 3 and 5 extend through the sleeves I1 and 12, respectively.
  • this embodiment has used a double p-n junction diode composed of GaAs P crystal and GaAs crystal doped with Si, it is also possible to use various other double p-n junction diodes, for instance those composed of Gal crystal doped with Zn and O, and GaP crystal doped with Zn and N.
  • a semiconductor lamp for emitting a plurality of colors of light as if from a single source of light comprising a plurality of light-emitting semiconductor diodes disposed closely adjacent one another in distinct and separate positions on a common support means and capable of emitting light of respectively different colors, a common light scattering layer covering said light-emitting diodes acting to disperse the light from said diodes to provide the appearance ofa single source of light emitting said respectively different colors from the same position therein, and input terminal means for each of said diodes extending therefrom for receiving electrical input signals to selectively energize said diodes to transmit light of various colors through said light scattering layer.
  • a multi-color semiconductor lamp wherein said light-emitting diodes include at least one light emitting diode emitting invisible light and a layer of flourescent material covering said one diode and responsive to said invisible light to emit visible light of a selective color.
  • a multi-color semiconductor lamp wherein said light emitting diodes include at least a first such diode emitting visible light and at least a second such diode emitting invisible light;
  • each such diode is covered by a layer offluorescent material responsive to said invisible light to emit visible light of a predetermined color.
  • a multi-color semiconductor lamp according to claim l wherein said support means comprises a lightreflecting layer defining a casing around said lamp with a light emitting opening opposite said light scattering layer.
  • said light scattering layer comprises a body of ground glass.
  • said supporting means comprises a metal casing having a light emitting opening therein opposite said light scattering layer and lens means positioned across said opening in the provision of a modular semiconductor lamp; and wherein said input terminal means are mounted on said support means adjacent said light emitting diodes.
  • said casing further includes a reflective internal surface and said lens means comprises a transparent layer filling said casing, covering said light scattering layer and having a lens-shaped external surface thereon.
  • a semiconductor lamp for emitting a pluralty of colors of light as if from a single source of light comprising a plurality of light'emitting semiconductor diodes disposed closely adjacent one another in distinct and separate positions on a common support means and capable of emitting light of respectively different colors, a common light scattering layer covering said light-emitting diodes acting to disperse the light from said diodes to provide the appearance of a single source of light emitting different colors from the same position therein, and input terminal means for each of said di odes extending therefrom for receiving electrical input signals to selectively simultaneously energize at least two of said diodes to transmit light of various blends of colors through said light scattering layer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
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US347660A 1972-04-04 1973-04-04 Multi-color semiconductor lamp Expired - Lifetime US3875456A (en)

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JP3372572A JPS48102585A (enrdf_load_stackoverflow) 1972-04-04 1972-04-04

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WO2000002261A1 (de) * 1998-06-30 2000-01-13 Osram Opto Semiconductors Gmbh & Co. Ohg Lichtquelle zur erzeugung sichtbaren lichts
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