US3341442A - Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays - Google Patents

Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays Download PDF

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Publication number
US3341442A
US3341442A US574868A US57486866A US3341442A US 3341442 A US3341442 A US 3341442A US 574868 A US574868 A US 574868A US 57486866 A US57486866 A US 57486866A US 3341442 A US3341442 A US 3341442A
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United States
Prior art keywords
sputtering
anode
chamber
substrate
cathode
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Expired - Lifetime
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US574868A
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English (en)
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Kay Eric
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International Business Machines Corp
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International Business Machines Corp
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Publication date
Priority to GB1054660D priority Critical patent/GB1054660A/en
Priority claimed from US309159A external-priority patent/US3282816A/en
Priority to DE19641515301 priority patent/DE1515301A1/de
Priority to FR988154A priority patent/FR1417190A/fr
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US574216A priority patent/US3354074A/en
Priority to US574868A priority patent/US3341442A/en
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Publication of US3341442A publication Critical patent/US3341442A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Definitions

  • FIG.1 A first figure.
  • the present invention relates to an improved method and improved apparatus for depositing thin films from material which have been sputtered from a cathode and more particularly, to the method and apparatus for precleaning of the substrate and associated exposed apparatus within the sputtering environment.
  • the sources of contamination can be traced to impurities on the electrodes, the envelope or on other apparatus appearing in the sputtering environment.
  • One obvious way of removing the impurities is to go through the same elaborate and costly procedure utilized in vacuum deposition of complete out-gasing at high temperature, baking, with subsequent prolonged pumping to reach a 1() mm. Hg pressure before leaking pure inert gas into the apparatus.
  • Another method of precleaning is by pro-operation of the sputtering apparatus before placing the substrate on the anode.
  • pre-cleaning sputtering really erodes some of the cathode and deposits most of the impurities therefrom on the anode. Further, such pre-operation has little effect upon the inner vessel walls within the chamber.
  • impurities are brought in when the substrate is mounted since the apparatus is thereby exposed to the atmosphere. Also, no adequate way is provided to clean the substrate.
  • Yet another object of the present invention is to provide an improved method of efliciently pre-cleaning the substrate or article to be coated.
  • Still another object of the present invention is to provide a method of pre-cleaning the inner vessel walls within the sputtering chamber and removing the sputtered impurities from the chamber.
  • Patented Sept. 12, 1967 Another object of the present invention is to provide an improved apparatus for pre-cleaning sputtering apparatus.
  • Yet another object of the present invention is to provide improved apparatus for efliciently pre-cleaning the substrate or article to be coated.
  • Still another object of the present invention is to provide improved apparatus for pro-cleaning the inner vessel Walls within the sputtering chamber and for removing the sputtered impurities from the chamber.
  • FIG. 1 is a schematic perspective representation, partly broken away, of a sputtering device utilized according to the invention.
  • FIG. 2 is a perspective sectional view of a complete sputtering apparatus embodiment utilized according to the invention.
  • FIGS. 1 and 2 of this application correspond respectively to FIGS. 3 and 4 of the parent application.
  • the numbering of the elements of FIGS. 1 and 2 thus corresponds identically to the numbering thereof in FIGS. 3 and 4 of the parent application.
  • the exemplary embodiment includes a cylindrical cathode 40 and a substrate 47, which is the article to be coated.
  • the substrate 47 is positioned Within the chamber formed by the cylindrical cathode 40 and, when sputtering conditions are invoked in accordance with the parent application, above, the substrate will be sputtercoated with a material eroded from cathode sleeve 41 Within cathode 40.
  • the sputtering glow discharge condition is applied between substrate 47, which is ohmically connected to the positively charged anode 42 and the inner surface of sleeve 41.
  • the surface of the cathode 40 may be directly eroded by removing sleeve 41, which is only provided for convenience and versatility.
  • the eroded material effectively fills the discharge chamber with a gas having the same composition as sleeve 41 (even if it is a multi-component alloy).
  • This gas comprises a cloud of the material impact evaporated from the surface of sleeve 41. This gas diffusively emanates toward, and deposits itself upon, the surface of substrate 47 in a uniform, carefully controlled manner.
  • sleeve 41 of depository material may comprise any suitable material to be deposited on the substrate 47, as long as it is ohmically and thermally connected to cathode 40.
  • This allows a convenient change in deposition sourcematerial.
  • the source-material might comprise a cathode cylinder itself, although it would be preferable not to erode this, keeping it uneroded to serve as a container Wall.
  • the substrate 47 might alternatively comprise the anode 42 itself which may be introduced axially of the cathode wall through chamber 70.
  • auxiliary chamber 70 in conjunction with its removable top 71 provides an access port through which the anode substrate configurations may be axially inserted, allowing the substrate 47 to be introduced quickly and easily into the chamber and thereafter removed.
  • a second, and wholly unobvious, function of chamber 70 is for clean-up purposes.
  • Such a pro-cleaning arrangement is aided also by the elements comprising rotatable shutter 53, grid 72, and auxiliary anode 44, the latter being axially removable.
  • auxiliary anode 44 is introduced into the main discharge chamber and charged to sputtering potential, so as to initiate clean-up sputtering (or erosion) of the inner vessel walls Within the chamber.
  • the clean-up material may be captured either by depositing it upon auxiliary anode 44 or by pumping down during sputtering through port 52, evacuating the eroded clean-up material.
  • Such pre-cleaning by ion bombardment lends itself particularly to the apparatus of the invention, as here described.
  • the provision of the auxiliary anode 44 makes it unnecessary to remove or cover the substrate during clean-up discharge time.
  • a second clean-up operation may be performed upon the substrate objects while in the auxiliary chamber 70.
  • Perforated grid 72 is provided for this purpose and, during clean-up, is charged with respect to the substrate so as to bombard the substrate with low energy (about 300 ev.) ions (Canal Ray bombardment) passing through the electrode perforations. In this configuration, electrons will be repelled by the perforated grid 72, keeping the substrate out of the high electron density plasma to avoid electron-induced contamination, e.g., polymerization of oil vapors. Then, after suitable pre-cleaning by ion bombardment, the substrate can be introduced into the sputtering chamber for coating.
  • auxiliary chamber 70 It may be noted in connection with auxiliary chamber 70 that it is sealably but insulatedly connected, for instance, by Tefion insulation 56, to the end plates 58, 58 of the main chamber.
  • End plates 58, 58' are provided as the axial closures of the container formed by cylindrical cathode 40. These end plates are made of metallic material, preferably the same material as cathode 40 so as to extend the effective cathode surface electrically, preventing undesirable sharp field gradients of the cylinder edges. Sheets 60, 60 of dielectric material overlie the outer surfaces of end plates 58, 58 entirely, except for gaps 95 (of a few mm.) adjacent sleeve 41. This obstructs the discharge at the end plates, thereby preventing erosion thereon and still avoids a metal-to-dielectric vacuum seal by allowing use of metal closures 58, 58'.
  • the anode therein may be modified to be withdrawn into a chamber which may be sealed off and a grid may be imposed between the anode and the chamber.
  • An auxiliary anode may then be inserted into the sputtering enclosure and selective discharges struck between the cathode and auxiliary anode and the enclosure and auxiliary anode.
  • the perforated grid may then be charged to allow Canal Ray bombardment of the substrate with low energy ions passing through the grid per- 5 forations.
  • the main requirements of the described pre-cleaning are therefore as follows. First, to clean by bombardment all surfaces. Second, to have a large inert sputtering gas throughput while pre-cleanin-g to flush the contaminants from the system. Third, to separate the substrate configuration effectively from the rest of the apparatus so that decontaminating one surface does not recontaminate another. And fourth, utilizing auxiliary anode 44 not only to provide an electrode for the pre-cleaning discharge, but also as a surface area for condensing the sputtered impurities.
  • said sputtering discharge device comprises a hollow cathode discharge device, whereby said cathode comprises the inner surface of said discharge device.
  • the method of claim 3 including the additional step of continuously flushing the interior of said hollow cathode discharge device with inert sputtering gas maintained at the proper pressure to maintain sputtering discharge conditions therein.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
US574868A 1963-09-16 1966-08-22 Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays Expired - Lifetime US3341442A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB1054660D GB1054660A (enrdf_load_stackoverflow) 1963-09-16
DE19641515301 DE1515301A1 (de) 1963-09-16 1964-09-12 Verfahren zur Aufbringung hochwertiger duenner Schichten mittels Kathodenzerstaeubung und Vorrichtung zur Durchfuehrung des Verfahrens
FR988154A FR1417190A (fr) 1963-09-16 1964-09-15 Appareil de projection symétrique
US574216A US3354074A (en) 1963-09-16 1966-08-22 Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge
US574868A US3341442A (en) 1963-09-16 1966-08-22 Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US309159A US3282816A (en) 1963-09-16 1963-09-16 Process of cathode sputtering from a cylindrical cathode
US574216A US3354074A (en) 1963-09-16 1966-08-22 Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge
US574868A US3341442A (en) 1963-09-16 1966-08-22 Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays

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US574868A Expired - Lifetime US3341442A (en) 1963-09-16 1966-08-22 Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays
US574216A Expired - Lifetime US3354074A (en) 1963-09-16 1966-08-22 Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge

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US574216A Expired - Lifetime US3354074A (en) 1963-09-16 1966-08-22 Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge

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DE (1) DE1515301A1 (enrdf_load_stackoverflow)
GB (1) GB1054660A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404084A (en) * 1965-10-20 1968-10-01 Gen Precision Systems Inc Apparatus for depositing ionized electron beam evaporated material on a negatively biased substrate
US3410774A (en) * 1965-10-23 1968-11-12 Ibm Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece
US3544445A (en) * 1966-09-01 1970-12-01 Bendix Corp Floating shield in a triode sputtering apparatus protecting the base from the discharge
US3548189A (en) * 1965-06-16 1970-12-15 Aden B Meinel Method employing ion beams for polishing and figuring refractory dielectrics
US3925182A (en) * 1973-09-25 1975-12-09 Shatterproof Glass Corp Method for continuous production of sputter-coated glass products
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
WO2007124879A3 (de) * 2006-04-26 2008-07-17 Systec System Und Anlagentechn Vorrichtung und verfahren zur homogenen pvd-beschichtung
CN111074208A (zh) * 2019-12-19 2020-04-28 中国科学院高能物理研究所 一种纯铌腔内表面镀铌三锡薄膜的方法及真空炉

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4132613A (en) * 1974-12-23 1979-01-02 Telic Corporation Glow discharge method and apparatus
JPS51117933A (en) * 1975-04-10 1976-10-16 Tokuda Seisakusho Spattering apparatus
US4179351A (en) * 1976-09-09 1979-12-18 Hewlett-Packard Company Cylindrical magnetron sputtering source
US4090941A (en) * 1977-03-18 1978-05-23 United Technologies Corporation Cathode sputtering apparatus
US4252626A (en) * 1980-03-10 1981-02-24 United Technologies Corporation Cathode sputtering with multiple targets
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
US7335426B2 (en) 1999-11-19 2008-02-26 Advanced Bio Prosthetic Surfaces, Ltd. High strength vacuum deposited nitinol alloy films and method of making same
DE102004005663A1 (de) * 2004-02-05 2005-09-01 Zentrum für Material- und Umwelttechnik GmbH Verfahren zum Herstellen einer Targetanordnung
CN106884150B (zh) * 2017-04-24 2023-06-09 爱瑞德科技(大连)有限公司 一种悬浮阳极及带有悬浮阳极的磁控溅射装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2189580A (en) * 1937-05-29 1940-02-06 Gen Electric Method of making a photoelectric cell
US2886502A (en) * 1955-10-28 1959-05-12 Edwards High Vacuum Ltd Cathodic sputtering of metal and dielectric films
US2897129A (en) * 1957-03-04 1959-07-28 Titanium Metals Corp Electrode handling and storing apparatus
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL50072C (enrdf_load_stackoverflow) * 1935-12-28
DE722131C (de) * 1937-08-15 1942-07-01 Bernhard Berghaus Anordnung und Verfahren zum Metallisieren von Gegenstaenden mittels Kathodenzerstaeubung
GB1022360A (en) * 1961-12-13 1966-03-09 Berghaus Elektrophysik Anst Method of and apparatus for coating an article
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2189580A (en) * 1937-05-29 1940-02-06 Gen Electric Method of making a photoelectric cell
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
US2886502A (en) * 1955-10-28 1959-05-12 Edwards High Vacuum Ltd Cathodic sputtering of metal and dielectric films
US2897129A (en) * 1957-03-04 1959-07-28 Titanium Metals Corp Electrode handling and storing apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3548189A (en) * 1965-06-16 1970-12-15 Aden B Meinel Method employing ion beams for polishing and figuring refractory dielectrics
US3404084A (en) * 1965-10-20 1968-10-01 Gen Precision Systems Inc Apparatus for depositing ionized electron beam evaporated material on a negatively biased substrate
US3410774A (en) * 1965-10-23 1968-11-12 Ibm Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece
US3544445A (en) * 1966-09-01 1970-12-01 Bendix Corp Floating shield in a triode sputtering apparatus protecting the base from the discharge
US3925182A (en) * 1973-09-25 1975-12-09 Shatterproof Glass Corp Method for continuous production of sputter-coated glass products
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
WO2007124879A3 (de) * 2006-04-26 2008-07-17 Systec System Und Anlagentechn Vorrichtung und verfahren zur homogenen pvd-beschichtung
CN111074208A (zh) * 2019-12-19 2020-04-28 中国科学院高能物理研究所 一种纯铌腔内表面镀铌三锡薄膜的方法及真空炉
CN111074208B (zh) * 2019-12-19 2021-04-06 中国科学院高能物理研究所 一种纯铌腔内表面镀铌三锡薄膜的方法及真空炉

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US3354074A (en) 1967-11-21
GB1054660A (enrdf_load_stackoverflow)
DE1515301A1 (de) 1969-06-19

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