US20230215940A1 - Semiconductor device, battery protection circuit, and power management circuit - Google Patents

Semiconductor device, battery protection circuit, and power management circuit Download PDF

Info

Publication number
US20230215940A1
US20230215940A1 US18/181,332 US202318181332A US2023215940A1 US 20230215940 A1 US20230215940 A1 US 20230215940A1 US 202318181332 A US202318181332 A US 202318181332A US 2023215940 A1 US2023215940 A1 US 2023215940A1
Authority
US
United States
Prior art keywords
vertical mos
semiconductor device
mos transistor
mos transistors
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US18/181,332
Other languages
English (en)
Inventor
Kouki Yamamoto
Haruhisa Takata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority to US18/181,332 priority Critical patent/US20230215940A1/en
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN reassignment NUVOTON TECHNOLOGY CORPORATION JAPAN ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKATA, HARUHISA, YAMAMOTO, KOUKI
Priority to US18/330,053 priority patent/US11894456B2/en
Publication of US20230215940A1 publication Critical patent/US20230215940A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0068—Battery or charger load switching, e.g. concurrent charging and load supply
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the present disclosure relates to semiconductor devices, including vertical transistors, as well as battery protection circuits and power management circuits.
  • vertical transistor refers to vertical metal oxide semiconductor field effect transistors (vertical MOSFETs), vertical insulated gate bipolar transistors (vertical IGBTs), vertical bipolar junction transistors (vertical BJTs), etc.
  • a semiconductor device including a plurality of vertical MOS transistors that share a common drain region is conventionally known (see, for example, PTL 1).
  • semiconductor devices including a plurality of vertical MOS transistors that share a common drain region, it is preferable to inhibit localized heat generation.
  • An object of the present disclosure is to therefore provide a semiconductor device, etc., that can inhibit localized heat generation.
  • a semiconductor device is a semiconductor device of chip-size package type that is face-down mountable, and includes: a semiconductor layer; and N vertical MOS transistors in the semiconductor layer, where N is an integer greater than or equal to three.
  • Each of the N vertical MOS transistors includes, on an upper surface of the semiconductor layer, a gate pad electrically connected to a gate electrode of the vertical MOS transistor and one or more source pads electrically connected to a source electrode of the vertical MOS transistor.
  • the semiconductor layer includes a semiconductor substrate.
  • the semiconductor substrate functions as a common drain region for the N vertical MOS transistors.
  • a surface area of the vertical MOS transistor in a plan view of the semiconductor layer increases with an increase in a maximum specified current of the vertical MOS transistor.
  • a battery protection circuit includes: the semiconductor device described above; a first terminal connected to the one or more source pads of a single terminal-connected vertical MOS transistor among the N vertical MOS transistors included in the semiconductor device; and N ⁇ 1 battery cells each including a first electrode connected to the one or more source pads of a different one of N ⁇ 1 vertical MOS transistors among the N vertical MOS transistors included in the semiconductor device excluding the single terminal-connected vertical MOS transistor, the first electrode being one of a positive electrode or a negative electrode.
  • Each of the first electrodes included in the N ⁇ 1 battery cells has a same polarity.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three; N ⁇ 1 battery cells connected in a series connection; a first terminal connected to the one or more source pads of a first terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the N vertical MOS transistors included in the first semiconductor device, and to the one or more source pads of a second terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the three vertical MOS transistors included in the second semiconductor device; a second terminal connected to negative electrodes of the N ⁇ 1 battery cells; and a third terminal connected to a positive electrode of a battery cell, among the N ⁇ 1 battery cells, located at a positive electrode end of the series connection.
  • Each positive electrode of the N ⁇ 1 battery cells is connected to the one or more source pads of a different one of N ⁇ 1 vertical MOS transistors among the N vertical MOS transistors included in the first semiconductor device excluding the first terminal-connected vertical MOS transistor.
  • a positive electrode of a first battery cell located at a negative electrode end of the series connection is connected to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor
  • a negative electrode of a second battery cell located next to the first battery cell in the series connection is connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor.
  • the first battery cell and the second battery cell are connected in series via the second semiconductor device.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three; N battery cells connected in a series connection; a first terminal connected to the one or more source pads of a first terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the N vertical MOS transistors included in the first semiconductor device, and to the one or more source pads of a second terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the three vertical MOS transistors included in the second semiconductor device; a second terminal connected to negative electrodes of the N battery cells; and a third terminal connected to a positive electrode of a battery cell, among the N battery cells, located at a positive electrode end of the series connection.
  • Each positive electrode of N ⁇ 1 battery cells among the N battery cells excluding a first battery cell located at a negative electrode end of the series connection is connected to the one or more source pads of a different one of N ⁇ 1 vertical MOS transistors among the N vertical MOS transistors included in the first semiconductor device excluding the first terminal-connected vertical MOS transistor.
  • a positive electrode of the first battery cell located at the negative electrode end of the series connection is connected to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor, and a negative electrode of a second battery cell, among the N battery cells, located next to the first battery cell in the series connection is connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor.
  • the first battery cell and the second battery cell are connected in series via the second semiconductor device.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three, the at least one specific vertical MOS transistor of which totals one; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three, the at least one specific vertical MOS transistor of which totals one; a first terminal connected to the single source pad of the one specific vertical MOS transistor included in the first semiconductor device; a second terminal connected to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included in the first semiconductor device excluding the one specific vertical MOS transistor; a third terminal connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included in the first semiconductor device excluding the one specific vertical MOS transistor; a fourth terminal connected to the single source pad of the one specific vertical MOS transistor included in the second semiconductor device; a fifth terminal connected to the one or more source pads of one of two vertical MOS
  • the third terminal is for connecting to one or more positive electrodes of one or more battery cells.
  • the sixth terminal is for connecting to one or more negative electrodes of the one or more battery cells.
  • the first terminal, the second terminal, the fourth terminal, and the fifth terminal are for connecting to a power management circuit. Through the second terminal and the fifth terminal, the power management circuit applies charging current to the one or more battery cells when charging, and receives discharging current from the one or more battery cells when discharging.
  • a battery protection circuit includes: the semiconductor device described above, the N vertical MOS transistors of which total three, the at least one specific vertical MOS transistor of which totals one; a first terminal connected to the single source pad of the one specific vertical MOS transistor included in the semiconductor device and to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included in the semiconductor device excluding the one specific vertical MOS transistor; a second terminal connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included in the semiconductor device excluding the one specific vertical MOS transistor; a third terminal; and a fourth terminal.
  • the first terminal is for connecting to one or more positive electrodes of one or more battery cells.
  • the third terminal is for connecting to one or more negative electrodes of the one or more battery cells.
  • the second terminal and the fourth terminal are for connecting to a power management circuit. Through the second terminal and the fourth terminal, the power management circuit applies charging current to the one or more battery cells when charging, and receives discharging current from the one or more battery cells when discharging.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total X+Y, where X is an integer greater than or equal to one and Y is an integer greater than or equal to two; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total 1+Y; X first terminals each connected to the one or more source pads of a different one of X vertical MOS transistors among the X+Y vertical MOS transistors included in the first semiconductor device; Y second terminals each connected to the one or more source pads of a different one of Y vertical MOS transistors among the X+Y vertical MOS transistors included in the first semiconductor device excluding the X vertical MOS transistors; a third terminal connected to the one or more source pads of a single vertical MOS transistor among the 1+Y vertical MOS transistors included in the second semiconductor device; and Y fourth terminals each connected to the one or more source pads of a different one of Y vertical
  • the X first terminals are for connecting to respective positive electrodes of X battery cells.
  • the third terminal is for connecting to one or more negative electrodes of the X battery cells.
  • the Y second terminals and the Y fourth terminals are for connecting to respective Y power management circuits. Through one of the Y second terminals and one of the Y fourth terminals, each of the Y power management circuits applies charging current to at least one battery cell among the X battery cells when charging, and receives discharging current from the at least one battery cell among the X battery cells when discharging.
  • a power management circuit includes: the semiconductor device described above, the N vertical MOS transistors of which total X+Y, where X is an integer greater than or equal to one and Y is an integer greater than or equal to two; X terminals each connected to the one or more source pads of a different one of X vertical MOS transistors among the X+Y vertical MOS transistors included in the semiconductor device; and Y circuits each connected to the one or more source pads of a different one of Y vertical MOS transistors among the X+Y vertical MOS transistors included in the semiconductor device excluding the X vertical MOS transistors.
  • the X terminals are for connecting to respective X external circuits.
  • Each of the Y circuits has a separate power supply.
  • a semiconductor device is a semiconductor device of chip-size package type that is face-down mountable, and includes: a semiconductor layer; and N vertical transistors in the semiconductor layer, where N is an integer greater than or equal to three.
  • Each of the N vertical transistors includes, on an upper surface of the semiconductor layer, a control pad electrically connected to a control electrode that controls conduction of the vertical transistor and one or more external connection pads electrically connected to an external connection electrode through which the vertical transistor receives current from outside or outputs current outside.
  • the semiconductor layer includes a semiconductor substrate.
  • the semiconductor substrate includes one main surface on which the N vertical transistors are formed and an other main surface facing away from the one main surface, and the semiconductor device further includes a common electrode common to the N vertical transistors on the other main surface side of the semiconductor substrate. For each of the N vertical transistors, a surface area of the vertical transistor in a plan view of the semiconductor layer increases with an increase in a maximum specified current of the vertical transistor.
  • the semiconductor device, etc., according to one aspect of the present disclosure makes it possible to provide a semiconductor device, etc., capable of inhibiting localized heat generation.
  • FIG. 1 is a cross-sectional view illustrating one example of the structure of a semiconductor device according to Embodiment 1.
  • FIG. 2 is a plan view illustrating one example of the structure of the semiconductor device according to Embodiment 1.
  • FIG. 3 is a circuit diagram illustrating one example of the circuit configuration of the semiconductor device according to Embodiment 1.
  • FIG. 4 A is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 4 B is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 5 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 6 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 7 A is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 7 B is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 8 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 9 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 10 A is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 10 B is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 10 C is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 10 D is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 A is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 B is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 C is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 D is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 E is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 F is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 G is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 H is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 I is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 11 J is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 12 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 13 A is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 13 B is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 14 A is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 14 B is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 15 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 16 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 17 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 18 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 19 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 20 is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 A is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 B is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 C is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 D is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 E is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 F is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 G is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 21 H is a plan view of the semiconductor device according to Embodiment 1.
  • FIG. 22 A is a cross-sectional view illustrating one example of the structure of the semiconductor device according to Embodiment 1.
  • FIG. 22 B is a plan view illustrating one example of the structure of the semiconductor device according to Embodiment 1.
  • FIG. 23 is a cross-sectional view illustrating one example of the structure of the semiconductor device according to Embodiment 1.
  • FIG. 24 is a circuit diagram illustrating one example of the configuration of a battery protection system according to Embodiment 2.
  • FIG. 25 A is a schematic diagram illustrating the battery protection system according to Embodiment 2 charging battery cells.
  • FIG. 25 B is a schematic diagram illustrating the battery protection system according to Embodiment 2 discharging battery cells.
  • FIG. 26 is a circuit diagram illustrating one example of the configuration of the battery protection system according to Embodiment 2.
  • FIG. 27 is a circuit diagram illustrating one example of the configuration of the battery protection system according to Embodiment 2.
  • FIG. 28 is a circuit diagram illustrating one example of the configuration of a battery protection system according to Embodiment 3.
  • FIG. 29 A is a schematic diagram illustrating the battery protection system according to Embodiment 3 charging N battery cells in series.
  • FIG. 29 B is a schematic diagram illustrating the battery protection system according to Embodiment 3 discharging N battery cells.
  • FIG. 29 C is a schematic diagram illustrating the battery protection system according to Embodiment 3 charging N battery cells in parallel.
  • FIG. 30 A is a circuit diagram illustrating a specific example of a battery protection circuit according to Embodiment 3.
  • FIG. 30 B is a circuit diagram illustrating a specific example of the battery protection circuit according to a conventional example.
  • FIG. 31 A is a circuit diagram illustrating a specific example of the battery protection circuit according to Embodiment 3.
  • FIG. 31 B is a circuit diagram illustrating a specific example of the battery protection circuit according to a conventional example.
  • FIG. 32 A is a circuit diagram illustrating a specific example of the battery protection circuit according to Embodiment 3.
  • FIG. 32 B is a circuit diagram illustrating a specific example of the battery protection circuit according to a conventional example.
  • FIG. 33 A is a schematic diagram illustrating the battery protection system according to Embodiment 3 charging three battery cells in series.
  • FIG. 33 B is a schematic diagram illustrating the battery protection system according to Embodiment 3 stopping the serial charging of three battery cells and starting to supply out the voltage of the positive electrode of one battery cell.
  • FIG. 33 C is a schematic diagram illustrating the battery protection system according to Embodiment 3 charging a single battery cell.
  • FIG. 33 D is a schematic diagram illustrating the battery protection system according to Embodiment 3 discharging three battery cells in parallel.
  • FIG. 34 is a circuit diagram illustrating one example of the configuration of a battery protection system according to Embodiment 4.
  • FIG. 35 A is a schematic diagram illustrating the battery protection system according to Embodiment 4 charging N ⁇ 1 battery cells in series.
  • FIG. 35 B is a schematic diagram illustrating the battery protection system according to Embodiment 4 discharging N ⁇ 1 battery cells.
  • FIG. 35 C is a schematic diagram illustrating the battery protection system according to Embodiment 4 charging N ⁇ 1 battery cells in parallel.
  • FIG. 36 is a circuit diagram illustrating a specific example of a battery protection circuit according to Embodiment 4.
  • FIG. 37 A is one example of a plan view of the semiconductor device according to Embodiment 4.
  • FIG. 37 B is one example of a plan view of the semiconductor device according to Embodiment 4.
  • FIG. 38 A is one example of a plan view of the semiconductor device according to Embodiment 4.
  • FIG. 38 B is one example of a plan view of the semiconductor device according to Embodiment 4.
  • FIG. 39 is a circuit diagram illustrating a specific example of the battery protection circuit according to Embodiment 4.
  • FIG. 40 is a circuit diagram illustrating a specific example of the battery protection circuit according to Embodiment 4.
  • FIG. 41 A is a schematic diagram illustrating the battery protection system according to Embodiment 4 charging three battery cells in series.
  • FIG. 41 B is a schematic diagram illustrating the battery protection system according to Embodiment 4 stopping the serial charging of three battery cells and starting to supply out the voltage of the positive electrode of one battery cell.
  • FIG. 41 C is a schematic diagram illustrating the battery protection system according to Embodiment 4 charging a single battery cell.
  • FIG. 41 D is a schematic diagram illustrating the battery protection system according to Embodiment 4 charging three battery cells in parallel.
  • FIG. 42 is a schematic diagram illustrating one example of the configuration of a battery protection system according to Embodiment 5.
  • FIG. 43 is a schematic diagram illustrating one example of the configuration of a battery protection system according to Embodiment 6.
  • FIG. 44 is a schematic diagram illustrating one example of the configuration of a battery protection system according to Embodiment 7.
  • FIG. 45 is a schematic diagram illustrating one example of the configuration of a power management system according to Embodiment 8.
  • FIG. 46 is a schematic diagram illustrating one example of the configuration of a power management system according to Embodiment 9.
  • the inventors are developing semiconductor devices that include a plurality of vertical MOS transistors that share a common drain region and have mutually different maximum specified currents.
  • the inventors noticed that when the respective maximum specified currents are applied to the plurality of vertical MOS transistors whose maximum specified currents are mutually different, if their conduction resistance are equal, the localized heat generation in the region of a vertical MOS transistor with a higher maximum specified current is greater than the localized heat generation in the region of a vertical MOS transistor with a lower maximum specified current. The inventors confirmed that this causes an undesirable phenomenon of localized heat generation in the semiconductor device.
  • the inventors conducted a series of experiments and examinations to realize a semiconductor device that includes a plurality of vertical MOS transistors with a common drain region and can inhibit localized heat generation.
  • the amount of heat generated by a transistor, whose conduction resistance is R [ ⁇ ], when current I [A] flows through the transistor is proportional to R ⁇ I 2 .
  • the inventors have therefore discovered that in order to inhibit localized heat generation in a semiconductor device including a plurality of vertical MOS transistors that share a common drain region, it is effective to reduce the conduction resistance of each vertical MOS transistor in accordance with its maximum specified current, more so the larger the maximum specified current is.
  • the inventors conducted a series of further examinations. As a result, the inventors arrived at the semiconductor device and the like according to the following present disclosure.
  • a semiconductor device is a semiconductor device of chip-size package type that is face-down mountable, and includes: a semiconductor layer; and N vertical metal oxide semiconductor (MOS) transistors in the semiconductor layer, where N is an integer greater than or equal to three.
  • Each of the N vertical MOS transistors includes, on an upper surface of the semiconductor layer, a gate pad electrically connected to a gate electrode of the vertical MOS transistor and one or more source pads electrically connected to a source electrode of the vertical MOS transistor.
  • the semiconductor layer includes a semiconductor substrate. The semiconductor substrate functions as a common drain region for the N vertical MOS transistors. For each of the N vertical MOS transistors, a surface area of the vertical MOS transistor in a plan view of the semiconductor layer increases with an increase in a maximum specified current of the vertical MOS transistor.
  • the conduction resistance of the vertical MOS transistor is inversely proportional to the surface area in a plan view of the semiconductor layer. Accordingly, in the semiconductor device configured as described above, the greater the maximum specified current of the vertical MOS transistor is, the less the conduction resistance of the vertical MOS transistor is.
  • the surface area of the vertical MOS transistor in a plan view of the semiconductor layer may be proportional to the square of the maximum specified current of the vertical MOS transistor.
  • the conduction resistance when the maximum specified current flows may be inversely proportional to the square of the maximum specified current of the vertical MOS transistor.
  • One of the N vertical MOS transistors may be a specific vertical MOS transistor whose maximum specified current is equal to the sum of maximum specified currents of K vertical MOS transistors among the N vertical MOS transistors, where K is an integer greater than or equal to two and less than or equal to N ⁇ 1.
  • the N vertical MOS transistors may include at least one specific vertical MOS transistor the one or more source pads of which consist of a single source pad, and the gate pad and the single source pad included in each of the at least one specific vertical MOS transistor may be circular in a plan view of the semiconductor layer, and among the gate pad and the one or more source pads included in each of the N vertical MOS transistors, there may be no gate pad or source pad that is significantly smaller in surface area than either of the gate pad or the single source pad included in each of the at least one specific vertical MOS transistor.
  • the semiconductor device may be rectangular in a plan view of the semiconductor layer, and in each of one or more current paths defined by specifications, a first inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at an inlet or an outlet of the current path and a second inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at the outlet or the inlet of the current path may be adjacent to each other in a plan view of the semiconductor layer.
  • the semiconductor device may have the shape of a non-square rectangle in a plan view of the semiconductor layer, and in a plan view of the semiconductor layer, in each of the one or more current paths, a boundary line between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor may be parallel to a longer side of the semiconductor device.
  • a boundary line between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor may not be parallel to any of four sides of the semiconductor device.
  • a boundary line between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor may consist of alternately connected (i) one or more line segments parallel to a first side among four sides of the semiconductor device and (ii) one or more line segments parallel to a second side among the four sides that is orthogonal to the first side.
  • a first inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at an inlet or an outlet of the first current path and a second inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at the outlet or the inlet of the first current path may be adjacent to each other in a plan view of the semiconductor layer, in a second current path defined by the specifications, the first inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at an inlet or an outlet of the second current path and a third inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at the outlet or the inlet of the second current path may be adjacent to each other in a plan view of the semiconductor layer, in a third current path defined by the specifications, the second inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at an inlet or an outlet of the third current path and the third inlet/
  • a first inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at an inlet or an outlet of the first current path and a second inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at the outlet or the inlet of the first current path may be adjacent to each other in a plan view of the semiconductor layer, in a second current path defined by the specifications, the second inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at an inlet or an outlet of the second current path and a third inlet/outlet vertical MOS transistor, among the N vertical MOS transistors, that is located at the outlet or the inlet of the second current path may be adjacent to each other in a plan view of the semiconductor layer, a current path defined by the first inlet/outlet vertical MOS transistor and the third inlet/outlet vertical MOS transistor may not correspond to any of current paths defined by the specifications, the first inlet/outlet vertical MOS transistor
  • the semiconductor device may further include a drain pad on an upper surface of the semiconductor layer and electrically connected to the semiconductor substrate.
  • a battery protection circuit includes: the semiconductor device described above; a first terminal connected to the one or more source pads of a single terminal-connected vertical MOS transistor among the N vertical MOS transistors included in the semiconductor device; and N ⁇ 1 battery cells each including a first electrode connected to the one or more source pads of a different one of N ⁇ 1 vertical MOS transistors among the N vertical MOS transistors included in the semiconductor device excluding the single terminal-connected vertical MOS transistor, the first electrode being one of a positive electrode or a negative electrode.
  • Each of the first electrodes included in the N ⁇ 1 battery cells has a same polarity.
  • the battery protection circuit configured as described above, it is possible to provide a battery protection circuit including a first semiconductor device that can inhibit localized heat generation.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three; N ⁇ 1 battery cells connected in a series connection; a first terminal connected to the one or more source pads of a first terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the N vertical MOS transistors included in the first semiconductor device, and to the one or more source pads of a second terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the three vertical MOS transistors included in the second semiconductor device; a second terminal connected to negative electrodes of the N ⁇ 1 battery cells; and a third terminal connected to a positive electrode of a battery cell, among the N ⁇ 1 battery cells, located at a positive electrode end of the series connection.
  • Each positive electrode of the N ⁇ 1 battery cells is connected to the one or more source pads of a different one of N ⁇ 1 vertical MOS transistors among the N vertical MOS transistors included in the first semiconductor device excluding the first terminal-connected vertical MOS transistor.
  • a positive electrode of a first battery cell located at a negative electrode end of the series connection is connected to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor
  • a negative electrode of a second battery cell located next to the first battery cell in the series connection is connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor.
  • the first battery cell and the second battery cell are connected in series via the second semiconductor device.
  • the battery protection circuit configured as described above, it is possible to provide a battery protection circuit including a first semiconductor device and a second semiconductor device that can inhibit localized heat generation.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three; N battery cells connected in a series connection; a first terminal connected to the one or more source pads of a first terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the N vertical MOS transistors included in the first semiconductor device, and to the one or more source pads of a second terminal-connected vertical MOS transistor which is a single vertical MOS transistor among the three vertical MOS transistors included in the second semiconductor device; a second terminal connected to negative electrodes of the N battery cells; and a third terminal connected to a positive electrode of a battery cell, among the N battery cells, located at a positive electrode end of the series connection.
  • Each positive electrode of N ⁇ 1 battery cells among the N battery cells excluding a first battery cell located at a negative electrode end of the series connection is connected to the one or more source pads of a different one of N ⁇ 1 vertical MOS transistors among the N vertical MOS transistors included in the first semiconductor device excluding the first terminal-connected vertical MOS transistor.
  • a positive electrode of the first battery cell located at the negative electrode end of the series connection is connected to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor, and a negative electrode of a second battery cell, among the N battery cells, located next to the first battery cell in the series connection is connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included the second semiconductor device excluding the second terminal-connected vertical MOS transistor.
  • the first battery cell and the second battery cell are connected in series via the second semiconductor device.
  • the battery protection circuit configured as described above, it is possible to provide a battery protection circuit including a first semiconductor device and a second semiconductor device that can inhibit localized heat generation.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three, the at least one specific vertical MOS transistor of which totals one; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total three, the at least one specific vertical MOS transistor of which totals one; a first terminal connected to the single source pad of the one specific vertical MOS transistor included in the first semiconductor device; a second terminal connected to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included in the first semiconductor device excluding the one specific vertical MOS transistor; a third terminal connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included in the first semiconductor device excluding the one specific vertical MOS transistor; a fourth terminal connected to the single source pad of the one specific vertical MOS transistor included in the second semiconductor device; a fifth terminal connected to the one or more source pads of one of two vertical MOS
  • the third terminal is for connecting to one or more positive electrodes of one or more battery cells.
  • the sixth terminal is for connecting to one or more negative electrodes of the one or more battery cells.
  • the first terminal, the second terminal, the fourth terminal, and the fifth terminal are for connecting to a power management circuit. Through the second terminal and the fifth terminal, the power management circuit applies charging current to the one or more battery cells when charging, and receives discharging current from the one or more battery cells when discharging.
  • the battery protection circuit configured as described above, it is possible to provide a battery protection circuit including a first semiconductor device and a second semiconductor device that can inhibit localized heat generation.
  • a battery protection circuit includes: the semiconductor device described above, the N vertical MOS transistors of which total three, the at least one specific vertical MOS transistor of which totals one; a first terminal connected to the single source pad of the one specific vertical MOS transistor included in the semiconductor device and to the one or more source pads of one of two vertical MOS transistors among the three vertical MOS transistors included in the semiconductor device excluding the one specific vertical MOS transistor; a second terminal connected to the one or more source pads of an other of the two vertical MOS transistors among the three vertical MOS transistors included in the semiconductor device excluding the one specific vertical MOS transistor; a third terminal; and a fourth terminal.
  • the first terminal is for connecting to one or more positive electrodes of one or more battery cells.
  • the third terminal is for connecting to one or more negative electrodes of the one or more battery cells.
  • the second terminal and the fourth terminal are for connecting to a power management circuit. Through the second terminal and the fourth terminal, the power management circuit applies charging current to the one or more battery cells when charging, and receives discharging current from the one or more battery cells when discharging.
  • the battery protection circuit configured as described above, it is possible to provide a battery protection circuit including a first semiconductor device that can inhibit localized heat generation.
  • a battery protection circuit includes: a first semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total X+Y, where X is an integer greater than or equal to one and Y is an integer greater than or equal to two; a second semiconductor device that is the semiconductor device described above, the N vertical MOS transistors of which total 1+Y; X first terminals each connected to the one or more source pads of a different one of X vertical MOS transistors among the X+Y vertical MOS transistors included in the first semiconductor device; Y second terminals each connected to the one or more source pads of a different one of Y vertical MOS transistors among the X+Y vertical MOS transistors included in the first semiconductor device excluding the X vertical MOS transistors; a third terminal connected to the one or more source pads of a single vertical MOS transistor among the 1+Y vertical MOS transistors included in the second semiconductor device; and Y fourth terminals each connected to the one or more source pads of a different one of Y vertical
  • the X first terminals are for connecting to respective positive electrodes of X battery cells.
  • the third terminal is for connecting to one or more negative electrodes of the X battery cells.
  • the Y second terminals and the Y fourth terminals are for connecting to respective Y power management circuits. Through one of the Y second terminals and one of the Y fourth terminals, each of the Y power management circuits applies charging current to at least one battery cell among the X battery cells when charging, and receives discharging current from the at least one battery cell among the X battery cells when discharging.
  • the battery protection circuit configured as described above, it is possible to provide a battery protection circuit including a first semiconductor device and a second semiconductor device that can inhibit localized heat generation.
  • a power management circuit includes: the semiconductor device described above, the N vertical MOS transistors of which total X+Y, where X is an integer greater than or equal to one and Y is an integer greater than or equal to two; X terminals each connected to the one or more source pads of a different one of X vertical MOS transistors among the X+Y vertical MOS transistors included in the semiconductor device; and Y circuits each connected to the one or more source pads of a different one of Y vertical MOS transistors among the X+Y vertical MOS transistors included in the semiconductor device excluding the X vertical MOS transistors.
  • the X terminals are for connecting to respective X external circuits.
  • Each of the Y circuits has a separate power supply.
  • the power management circuit configured as described above, it is possible to provide a power management circuit including a first semiconductor device that can inhibit localized heat generation.
  • a semiconductor device is a semiconductor device of chip-size package type that is face-down mountable, and includes: a semiconductor layer; and N vertical transistors in the semiconductor layer, where N is an integer greater than or equal to three.
  • Each of the N vertical transistors includes, on an upper surface of the semiconductor layer, a control pad electrically connected to a control electrode that controls conduction of the vertical transistor and one or more external connection pads electrically connected to an external connection electrode through which the vertical transistor receives current from outside or outputs current outside.
  • the semiconductor layer includes a semiconductor substrate.
  • the semiconductor substrate includes one main surface on which the N vertical transistors are formed and an other main surface facing away from the one main surface, and the semiconductor device further includes a common electrode common to the N vertical transistors on the other main surface side of the semiconductor substrate. For each of the N vertical transistors, a surface area of the vertical transistor in a plan view of the semiconductor layer increases with an increase in a maximum specified current of the vertical transistor.
  • the conduction resistance of the vertical transistor is inversely proportional to the surface area in a plan view of the semiconductor layer. Accordingly, in the semiconductor device configured as described above, the greater the maximum specified current of the vertical transistor is, the less the conduction resistance of the vertical transistor is.
  • the surface area of the vertical transistor in a plan view of the semiconductor layer may be proportional to the square of the maximum specified current of the vertical transistor.
  • the conduction resistance when the maximum specified current flows may be inversely proportional to the square of the maximum specified current of the vertical transistor.
  • the semiconductor device may further include a common terminal that is on an upper surface side of the semiconductor layer and electrically connected to the common electrode.
  • Each of the one or more external connection pads included in each of the N vertical transistors may be an external output terminal through which current from the N vertical transistors is output outside the N vertical transistors, and the common terminal may be an external input terminal through which outside current is input into the N vertical transistors.
  • the semiconductor device according to Embodiment 1 is a face-down mountable chip-size package (CSP) semiconductor device in which N (N is an integer greater than or equal to three) vertical metal oxide semiconductor (MOS) transistors are formed. These N vertical MOS transistors are trench metal oxide semiconductor field effect transistors (MOSFETs).
  • CSP face-down mountable chip-size package
  • a vertical MOS transistor is used as one example of a vertical transistor, but the vertical transistor need not be limited to a vertical MOS transistor.
  • the vertical transistor may be a BJT or an IGBT. If the vertical transistor is a BJT, in the present disclosure, the term “source” may be replaced with “emitter”, the term “drain” may be replaced with “collector”, and the term “body” may be replaced with “base”. Additionally, in the present disclosure, the term “gate electrode”, which controls conduction, may be replaced with “base electrode”. Similarly, if the vertical transistor is an IGBT, in the present disclosure, the term “source” may be replaced with “emitter”, the term “drain” may be replaced with “collector”.
  • FIG. 1 is a cross-sectional view illustrating one example of the structure of semiconductor device 1 according to Embodiment 1.
  • FIG. 2 is a plan view illustrating one example of the structure of semiconductor device 1 .
  • FIG. 1 illustrates a cross section taken at line I-I illustrated in FIG. 2 .
  • FIG. 3 is a circuit diagram illustrating one example of the circuit configuration of semiconductor device 1 .
  • FIG. 1 through FIG. 3 illustrate semiconductor device 1 in a case where N is three, and descriptions referencing FIG. 1 through FIG. 3 describe N as three, but semiconductor device 1 is not necessarily limited to a case where N is three; it is sufficient so long as N is greater than or equal to three.
  • semiconductor device 1 includes semiconductor layer 40 , metal layer 30 , protective layer 35 , first vertical MOS transistor 10 (hereinafter also referred to as transistor 10 ) formed in region A 1 inside semiconductor layer 40 , second vertical MOS transistor 20 (hereinafter also referred to as transistor 20 ) formed in region A 2 inside semiconductor layer 40 , and third vertical MOS transistor 37 (hereinafter also referred to as transistor 37 ) formed in region A 3 inside semiconductor layer 40 .
  • first vertical MOS transistor 10 hereinafter also referred to as transistor 10
  • second vertical MOS transistor 20 hereinafter also referred to as transistor 20
  • third vertical MOS transistor 37 hereinafter also referred to as transistor 37
  • region inside semiconductor layer 40 where the N th vertical transistor is formed is also referred to as region AN.
  • FIG. 1 illustrates semiconductor device 1 in a case where semiconductor device 1 and semiconductor layer 40 are rectangular in a plan view of semiconductor layer 40 , but semiconductor device 1 is not limited to a configuration in which semiconductor device 1 and semiconductor layer 40 are rectangular in a plan view of semiconductor layer 40 .
  • Semiconductor layer 40 is formed by stacking semiconductor substrate 32 , low-concentration impurity layer 33 , and oxide film 34 .
  • Semiconductor substrate 32 is disposed on the lower surface side of semiconductor layer 40 and comprises silicon containing impurities of a first conductivity type.
  • Low-concentration impurity layer 33 is disposed on the upper surface side of semiconductor layer 40 , is formed in contact with semiconductor substrate 32 , and contains impurities of the first conductivity type at a concentration lower than the concentration of impurities of the first conductivity type in semiconductor substrate 32 .
  • low-concentration impurity layer 33 may be formed on semiconductor substrate 32 via epitaxial growth.
  • Oxide film 34 is disposed on the upper surface of semiconductor layer 40 and is formed in contact with low-concentration impurity layer 33 .
  • Protective layer 35 is formed in contact with the upper surface of semiconductor layer 40 and covers at least part of the upper surface of semiconductor layer 40 .
  • Metal layer 30 is formed in contact with the lower surface of semiconductor substrate 32 and may comprise silver, copper, nickel, or an alloy thereof, or a metal material with good electrical conductivity that enables functionality as an electrode. Metal layer 30 may contain trace amounts of non-metallic elements introduced as impurities in the manufacturing process of metal material.
  • transistor 10 includes, on the upper surface of semiconductor layer 40 in region A 1 in a plan view of semiconductor layer 40 , one or more (five in this example) first source pads 111 (first source pads 111 a , 111 b , 111 c , 111 d , and 111 e in this example), and first gate pad 119 , which are bonded to the mounting substrate via a bonding material during the face-down mounting.
  • first source pads 111 first source pads 111 a , 111 b , 111 c , 111 d , and 111 e in this example
  • first gate pad 119 which are bonded to the mounting substrate via a bonding material during the face-down mounting.
  • Transistor 20 includes, on the upper surface of semiconductor layer 40 in region A 2 in a plan view of semiconductor layer 40 , one or more (five in this example) second source pads 121 (second source pads 121 a , 121 b , 121 c , 121 d , and 121 e in this example), and second gate pad 129 , which are bonded to the mounting substrate via a bonding material during the face-down mounting.
  • second source pads 121 second source pads 121 a , 121 b , 121 c , 121 d , and 121 e in this example
  • second gate pad 129 which are bonded to the mounting substrate via a bonding material during the face-down mounting.
  • Transistor 37 includes, on the upper surface of semiconductor layer 40 in region A 3 in a plan view of semiconductor layer 40 , one or more (two in this example) third source pads 131 (third source pads 131 a and 131 b in this example), and third gate pad 139 , which are bonded to the mounting substrate via a bonding material during the face-down mounting.
  • Each first source pad 111 , each second source pad 121 , and each third source pad 131 has the shape of a non-square rectangle, an oval, or a circle in a plan view of semiconductor layer 40 .
  • shapes of the ends of the non-square rectangle and shapes of the ends of the oval are not limited to angled (in the case of a non-square rectangle) or semicircular (in the case of an oval), and may also be polygonal.
  • First gate pad 119 , second gate pad 129 , and third gate pad 139 are circular in a plan view of semiconductor layer 40 .
  • the number and shape of the one or more first source pads 111 , the one or more second source pads 121 , and the one or more third source pads 131 are not necessarily limited to the respective examples illustrated in FIG. 2 .
  • first body region 18 containing impurities of a second conductivity type different from the first conductivity type is formed in first region A 1 of low-concentration impurity layer 33 .
  • First source region 14 containing impurities of the first conductivity type, first gate conductor 15 , and first gate insulating film 16 are formed in first body region 18 .
  • First source electrode 11 is composed of portions 12 and 13 , and portion 12 is connected to first source region 14 and first body region 18 via portion 13 .
  • First gate conductor 15 is electrically connected to first gate pad 119 .
  • Portion 12 of first source electrode 11 is a layer that is bonded to solder during reflow in the face-down mounting process.
  • portion 12 may comprise a metal material including one or more of nickel, titanium, tungsten, and palladium.
  • the surface of portion 12 may be plated with, for instance, gold.
  • Portion 13 of first source electrode 11 is a layer connecting portion 12 and semiconductor layer 40 .
  • portion 13 may comprise a metal material including one or more of aluminum, copper, gold, and silver.
  • Second body region 28 containing impurities of the second conductivity type is formed in second region A 2 of low-concentration impurity layer 33 .
  • Second source region 24 containing impurities of the first conductivity type, second gate conductor 25 , and second gate insulating film 26 are formed in second body region 28 .
  • Second source electrode 21 is composed of portions 22 and 23 , and portion 22 is connected to second source region 24 and second body region 28 via portion 23 .
  • Second gate conductor 25 is electrically connected to second gate pad 129 .
  • Portion 22 of second source electrode 21 is a layer that is bonded to solder during reflow in the face-down mounting process.
  • portion 22 may comprise a metal material including one or more of nickel, titanium, tungsten, and palladium.
  • the surface of portion 22 may be plated with, for instance, gold.
  • Portion 23 of second source electrode 21 is a layer connecting portion 22 and semiconductor layer 40 .
  • portion 23 may comprise a metal material including one or more of aluminum, copper, gold, and silver.
  • a third body region (not illustrated in the drawings) containing impurities of the second conductivity type is formed in third region A 3 of low-concentration impurity layer 33 , just like first region A 1 of low-concentration impurity layer 33 and second region A 2 of low-concentration impurity layer 33 .
  • the third source region (not illustrated in the drawings) containing impurities of the first conductivity type, the third gate conductor (not illustrated in the drawings), and the third gate insulating film (not illustrated in the drawings) are formed in the third body region.
  • Third source electrode 31 (not illustrated in FIG. 1 and FIG. 2 ; see FIG.
  • 3 is composed of a first portion (not illustrated in the drawings) and a second portion (not illustrated in the drawings), and the first portion is connected to the third source region (not illustrated in the drawings) and the third body region via the second portion.
  • the third gate conductor is electrically connected to third gate pad 139 .
  • the first portion of third source electrode 31 is a layer that is bonded to solder during reflow in the face-down mounting process.
  • the first portion may comprise a metal material including one or more of nickel, titanium, tungsten, and palladium.
  • the surface of the first portion may be plated with, for instance, gold.
  • the second portion of third source electrode 31 is a layer connecting the first portion and semiconductor layer 40 .
  • the second portion may comprise a metal material including one or more of aluminum, copper, gold, and silver.
  • low-concentration impurity layer 33 and semiconductor substrate 32 function as a common drain region serving as the first drain region of transistor 10 , the second drain region of transistor 20 , and the third drain region of transistor 37 .
  • semiconductor substrate 32 functions as a common drain region for N (three in this example) vertical MOS transistors.
  • first body region 18 is covered with oxide film 34 having an opening, and portion 13 of first source electrode 11 , which is connected to first source region 14 via the opening in oxide film 34 , is provided.
  • Oxide film 34 and portion 13 of the first source electrode are covered with protective layer 35 having an opening, and portion 12 , which is connected to portion 13 of the first source electrode via the opening in protective layer 35 , is provided.
  • Second body region 28 is covered with oxide film 34 having an opening, and portion 23 of second source electrode 21 , which is connected to second source region 24 via the opening in oxide film 34 , is provided.
  • Oxide film 34 and portion 23 of the second source electrode are covered with protective layer 35 having an opening, and portion 22 , which is connected to portion 23 of the second source electrode via the opening in protective layer 35 , is provided.
  • the third body region is covered with oxide film 34 having an opening, and the second portion of third source electrode 31 , which is connected to the third source region via the opening in oxide film 34 , is provided.
  • Oxide film 34 and the second portion of the third source electrode are covered with protective layer 35 having an opening, and the first portion, which is connected to the second portion of the third source electrode via the opening in protective layer 35 , is provided.
  • first source pads 111 , the one or more second source pads 121 , and the one or more third source pads 131 refer to regions where first source electrode 11 , second source electrode 21 , and third source electrode 31 , respectively, are partially exposed on the upper surface of semiconductor device 1 , and are also referred to as terminals.
  • first gate pad 119 , second gate pad 129 , and third gate pad 139 refer to regions where first gate electrode 19 (not illustrated in FIG. 1 or FIG. 2 ; see FIG. 3 ), second gate electrode 29 (not illustrated in FIG. 1 or FIG. 2 ; see FIG. 3 ), and third gate electrode 39 (not illustrated in FIG. 1 or FIG. 2 ; see FIG. 3 ), respectively, are partially exposed on the upper surface of semiconductor device 1 , and are also referred to as terminals.
  • the first conductivity type may be n-type and the second conductivity type may be p-type
  • first source region 14 , second source region 24 , the third source region, semiconductor substrate 32 , and low-concentration impurity layer 33 may be n-type semiconductors
  • first body region 18 , second body region 28 , and the third body region may be p-type semiconductors.
  • the first conductivity type may be p-type and the second conductivity type may be n-type
  • first source region 14 , second source region 24 , the third source region, semiconductor substrate 32 , and low-concentration impurity layer 33 may be p-type semiconductors
  • first body region 18 , second body region 28 , and the third body region may be n-type semiconductors.
  • transistor 10 , transistor 20 , and transistor 37 are n-channel transistors where the first conductivity type is n-type and the second conductivity type is p-type.
  • semiconductor device 1 when a high voltage is applied to first source electrode 11 , a low voltage is applied to second source electrode 21 , and a voltage higher than or equal to a threshold is applied to second gate electrode 29 with the voltage of second source electrode 21 serving as a reference, a conducting channel is formed in the vicinity of second gate insulating film 26 in second body region 28 .
  • a main current flows along a path from first source electrode 11 to first body region 18 to low-concentration impurity layer 33 to semiconductor substrate 32 to metal layer 30 to semiconductor substrate 32 to low-concentration impurity layer 33 to the conducting channel formed in second body region 28 to second source region 24 and to second source electrode 21 , thereby placing the path in a conducting state.
  • the interface between first body region 18 and low-concentration impurity layer 33 in this main current path includes a P-N junction and serves as a body diode.
  • semiconductor device 1 when a high voltage is applied to second source electrode 21 , a low voltage is applied to first source electrode 11 , and a voltage higher than or equal to a threshold is applied to first gate electrode 19 with the voltage of first source electrode 11 serving as a reference, a conducting channel is formed in the vicinity of first gate insulating film 16 in first body region 18 .
  • a main current flows along a path from second source electrode 21 to second body region 28 to low-concentration impurity layer 33 to semiconductor substrate 32 to metal layer 30 to semiconductor substrate 32 to low-concentration impurity layer 33 to the conducting channel formed in first body region 18 to first source region 14 and to first source electrode 11 , thereby placing the path in a conducting state.
  • the interface between second body region 28 and low-concentration impurity layer 33 in this main current path includes a P-N junction and serves as a body diode.
  • semiconductor device 1 when a high voltage is applied to first source electrode 11 , a low voltage is applied to third source electrode 31 , and a voltage higher than or equal to a threshold is applied to third gate electrode 39 with the voltage of third source electrode 31 serving as a reference, a main current flows along a path from first source electrode 11 to third source electrode 31 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to third source electrode 31 , a low voltage is applied to first source electrode 11 , and a voltage higher than or equal to a threshold is applied to first gate electrode 19 with the voltage of first source electrode 11 serving as a reference, a main current flows along a path from third source electrode 31 to first source electrode 11 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to second source electrode 21 , a low voltage is applied to third source electrode 31 , and a voltage higher than or equal to a threshold is applied to third gate electrode 39 with the voltage of third source electrode 31 serving as a reference, a main current flows along a path from second source electrode 21 to third source electrode 31 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to third source electrode 31 , a low voltage is applied to second source electrode 21 , and a voltage higher than or equal to a threshold is applied to second gate electrode 29 with the voltage of second source electrode 21 serving as a reference, a main current flows along a path from third source electrode 31 to second source electrode 21 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to first source electrode 11 and second source electrode 21 , a low voltage is applied to third source electrode 31 , and a voltage higher than or equal to a threshold is applied to third gate electrode 39 with the voltage of third source electrode 31 serving as a reference, a main current flows along a path from first source electrode 11 and second source electrode 21 to third source electrode 31 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to third source electrode 31 , a low voltage is applied to first source electrode 11 and second source electrode 21 , a voltage higher than or equal to a threshold is applied to first gate electrode 19 with the voltage of first source electrode 11 serving as a reference, and a voltage higher than or equal to a threshold is applied to second gate electrode 29 with the voltage of second source electrode 21 serving as a reference, a main current flows along a path from third source electrode 31 to first source electrode 11 and second source electrode 21 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to second source electrode 21 and third source electrode 31 , a low voltage is applied to first source electrode 11 , and a voltage higher than or equal to a threshold is applied to first gate electrode 19 with the voltage of first source electrode 11 serving as a reference, a main current flows along a path from second source electrode 21 and third source electrode 31 to first source electrode 11 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to first source electrode 11 , a low voltage is applied to second source electrode 21 and third source electrode 31 , a voltage higher than or equal to a threshold is applied to second gate electrode 29 with the voltage of second source electrode 21 serving as a reference, and a voltage higher than or equal to a threshold is applied to third gate electrode 39 with the voltage of third source electrode 31 serving as a reference, a main current flows along a path from first source electrode 11 to second source electrode 21 and third source electrode 31 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to third source electrode 31 and first source electrode 11 , a low voltage is applied to second source electrode 21 , and a voltage higher than or equal to a threshold is applied to second gate electrode 29 with the voltage of second source electrode 21 serving as a reference, a main current flows along a path from third source electrode 31 and first source electrode 11 to second source electrode 21 , thereby placing the path in a conducting state.
  • semiconductor device 1 when a high voltage is applied to second source electrode 21 , a low voltage is applied to third source electrode 31 and first source electrode 11 , a voltage higher than or equal to a threshold is applied to third gate electrode 39 with the voltage of third source electrode 31 serving as a reference, and a voltage higher than or equal to a threshold is applied to first gate electrode 19 with the voltage of first source electrode 11 serving as a reference, a main current flows along a path from second source electrode 21 to third source electrode 31 and first source electrode 11 , thereby placing the path in a conducting state.
  • Each of the N vertical MOS transistors (here, three, namely first vertical MOS transistor 10 , second vertical MOS transistor 20 , and third vertical MOS transistor 37 ) has a maximum specified current.
  • “specified” refers to a product specification of the transistor, and the maximum specified current usually refers to the value stated in the product specifications for the transistor.
  • the value stated in the specifications may be the maximum rated current or a current equivalent to 50% of the maximum rated current.
  • 50% of the maximum rated current usually is stated in the product specifications as the current value used in evaluating conduction resistance.
  • the maximum specified current is not limited to 50% of the maximum rated current, and may be taken to be the current value used in evaluating conduction resistance that is stated in the product specifications.
  • the conduction resistance stated in the product specifications may be what is known as the “on-resistance”.
  • the surface area thereof in a plan view of semiconductor layer 40 increases with an increase in the maximum specified current thereof.
  • semiconductor device 1 including N vertical MOS transistors is divided into N regions in a plan view of semiconductor layer 40 , and there is no part that does not belong to any region.
  • the surface area of the N th vertical MOS transistor is defined by the boundary with another adjacent vertical MOS transistor.
  • the boundary may be regarded as a virtual line tracing the center position of the gap between portion 13 of first source electrode 11 and portion 23 of second source electrode 21 , may be regarded as an equi-potential ring (EQR), which is a metal line that is sometimes provided in the center position and does not have the function of conducting current, and may be regarded as the gap itself, albeit with a finite width. Even when the boundary is regarded as the gap itself, it can be recognized by the naked eye or under low magnification as a line in appearance.
  • EQR equi-potential ring
  • the surface area of the N th vertical MOS transistor in a plan view of semiconductor layer 40 may be the surface area of the active region of the N th vertical MOS transistor.
  • the active region of a vertical MOS transistor is the region of the body region of the vertical MOS transistor where the main current flows when the vertical MOS transistor is in a conducting state.
  • the active region approximately matches the extent of the body region in a plan view of semiconductor layer 40 .
  • the extent of the body region approximately matches the extent of the region where the vertical MOS transistor is formed (i.e., region A 1 if the vertical MOS transistor is transistor 10 , region A 2 if the vertical MOS transistor is transistor 20 , and region A 3 if the vertical MOS transistor is transistor 37 ).
  • the surface area of the active region approximately matches the extent of the region where the vertical MOS transistor is formed.
  • the maximum specified current of first vertical MOS transistor 10 may be denoted as I 1
  • the maximum specified current of second vertical MOS transistor 20 may be denoted as I 2 , . . .
  • the maximum specified current of the N th vertical MOS transistor may be denoted as IN.
  • the surface area of first vertical MOS transistor 10 in a plan view of semiconductor layer 40 may be denoted as S 1
  • the surface area of second vertical MOS transistor 20 in a plan view of semiconductor layer 40 may be denoted as S 2 , . . .
  • the surface area of the N th vertical MOS transistor in a plan view of semiconductor layer 40 may be denoted as SN.
  • the conduction resistance when maximum specified current I 1 flows through first vertical MOS transistor 10 may be denoted as R 1
  • the conduction resistance when maximum specified current I 2 flows through second vertical MOS transistor 20 may be denoted as R 2
  • the conduction resistance when maximum specified current IN flows through the N th vertical MOS transistor may be denoted as RN.
  • the surface areas of the N vertical MOS transistors in a plan view of semiconductor layer 40 are proportional to the squares of the maximum specified currents of the N vertical MOS transistors.
  • S 1 :S 2 : . . . :SN I 1 2 :I 2 2 : . . . :IN 2 .
  • the conduction resistances of the N vertical MOS transistors are inversely proportional to the squares of the maximum specified currents of the N vertical MOS transistors.
  • semiconductor device 1 configured as described above can inhibit localized heat generation.
  • Semiconductor device 1 configured as described above has the advantage that, when the intended use does not require current paths that need to carry large currents, the size of the semiconductor device itself can be reduced since appropriately sized vertical MOS transistors rather than oversized vertical MOS transistors can be provided on the current paths.
  • conduction resistance is usually measured as the conduction resistance in a certain current path, defined by the specifications, from one of the N vertical MOS transistors located at the inlet or the outlet of the current path (i.e., one of the “inlet/outlet” vertical MOS transistors) to another of the N vertical MOS transistors located at the outlet or the inlet of the current path (i.e., the other of the “inlet/outlet” vertical MOS transistors).
  • conduction resistance RN when maximum specified current IN flows can be calculated by dividing the conduction resistance of said current path when maximum specified current IN flows through the N th vertical MOS transistor, proportionally to the surface area of the other inlet/outlet vertical MOS transistor of said current path, with the sum of the surface areas of the N th vertical MOS transistor and the other inlet/outlet vertical MOS transistor as the denominator.
  • a first inlet/outlet vertical MOS transistor among the N vertical MOS transistors that is located at the inlet or the outlet of the current path and a second inlet/outlet vertical MOS transistor among the N vertical MOS transistors that is located at the outlet or the inlet of the current path are preferably adjacent to each other in a plan view of semiconductor layer 40 .
  • FIG. 4 A and FIG. 4 B are plan views of examples of geometries of semiconductor device 1 where N is three and the current paths defined by the specifications are (1) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the second vertical MOS transistor (Tr 2 ) and (2) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the third vertical MOS transistor (Tr 3 ), and (3) the current path between the second vertical MOS transistor (Tr 2 ) and the third vertical MOS transistor (Tr 3 ) is a current path not defined by the specifications.
  • Tr 1 and Tr 2 which are located at the inlet and the outlet of one current path defined by the specifications, are adjacent to each other, and Tr 1 and Tr 3 , which are located at the inlet and the outlet of the other current path defined by the specifications, are adjacent to each other.
  • Tr 1 and Tr 2 which are located at the inlet and the outlet of one current path defined by the specifications, are adjacent to each other, Tr 1 and Tr 3 , which are located at the inlet and the outlet of the other current path defined by the specifications, are not adjacent to each other.
  • Tr 2 is located on the current path between Tr 1 and Tr 3 .
  • Tr 1 and Tr 2 This causes the current path between Tr 1 and Tr 2 and the current path between Tr 1 and Tr 3 to overlap, whereby the maximum specified current also flows through Tr 3 at the same time the maximum specified current flows through Tr 2 , which causes Tr 2 to generate more heat than when only the maximum specified current of Tr 2 flows through Tr 2 .
  • the geometry of semiconductor device 1 illustrated in FIG. 4 A can be said to be preferable to the geometry of semiconductor device 1 illustrated in FIG. 4 B .
  • a current path defined by the specifications is a current path whose conduction resistance (on-resistance) is indicated in the product specifications of the relevant transistor.
  • One or more current paths and the maximum specified currents of the inlet/outlet vertical MOS transistors of each of the current paths are designed according to application, and stated in the product specifications, rather than any combination of N vertical MOS transistors being freely used as a current path.
  • the first vertical MOS transistor may hereinafter be denoted as Tr 1
  • the second vertical MOS transistor may hereinafter be denoted as Tr 2
  • the N th vertical MOS transistor may hereinafter be denoted as TrN.
  • the boundary line in a plan view of semiconductor layer 40 between the first inlet/outlet vertical MOS transistor located at the inlet or the outlet of the current path and the second inlet/outlet vertical MOS transistor located at the outlet or the inlet of the current path is preferably parallel to the longer side of semiconductor device 1 rather than to the shorter side of semiconductor device 1 .
  • FIG. 5 is a plan view of one example of a geometry of semiconductor device 1 where N is three and the current paths defined by the specifications are (1) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the second vertical MOS transistor (Tr 2 ) and (2) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the third vertical MOS transistor (Tr 3 ), and (3) the current path between the second vertical MOS transistor (Tr 2 ) and the third vertical MOS transistor (Tr 3 ) is a current path not defined by the specifications.
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 are parallel to the longer side of semiconductor device 1 in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 are parallel to the shorter side of semiconductor device 1 in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 5 is longer than the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 4 A
  • the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 5 is longer than the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 4 A .
  • the geometry of semiconductor device 1 illustrated in FIG. 5 can be said to be preferable to the geometry of semiconductor device 1 illustrated in FIG. 4 A .
  • the boundary line in a plan view of semiconductor layer 40 between the first inlet/outlet vertical MOS transistor located at the inlet or the outlet of the current path and the second inlet/outlet vertical MOS transistor located at the outlet or the inlet of the current path is preferably not parallel to any of the four sides of semiconductor device 1 rather than being parallel to any of the four sides of semiconductor device 1 .
  • FIG. 6 is a plan view of one example of a geometry of semiconductor device 1 where N is three and the current paths defined by the specifications are (1) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the second vertical MOS transistor (Tr 2 ) and (2) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the third vertical MOS transistor (Tr 3 ), and (3) the current path between the second vertical MOS transistor (Tr 2 ) and the third vertical MOS transistor (Tr 3 ) is a current path not defined by the specifications.
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 are not parallel to any of the four sides of semiconductor device 1 in a plan view of semiconductor layer 40 . Stated differently, the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 are oblique to each of the four sides of semiconductor device 1 .
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 are parallel to any of the four sides of semiconductor device 1 in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 6 is longer than the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 4 A
  • the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 6 is longer than the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 4 A .
  • the geometry of semiconductor device 1 illustrated in FIG. 6 can be said to be preferable to the geometry of semiconductor device 1 illustrated in FIG. 4 A .
  • FIG. 7 A and FIG. 7 B are plan views of examples of geometries of semiconductor device 1 where N is three and the current paths defined by the specifications are (1) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the second vertical MOS transistor (Tr 2 ), (2) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the third vertical MOS transistor (Tr 3 ), and (3) the current path between the second vertical MOS transistor (Tr 2 ) and the third vertical MOS transistor (Tr 3 ).
  • the boundary line between Tr 1 and Tr 2 , the boundary line between Tr 1 and Tr 3 , and the boundary line between Tr 2 and Tr 3 are parallel to any of the four sides of semiconductor device 1 in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 are not parallel to any of the four sides of semiconductor device 1 in a plan view of semiconductor layer 40 . Stated differently, the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 are oblique to each of the four sides of semiconductor device 1 .
  • the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 7 B is longer than the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 7 A
  • the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 7 B is longer than the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 7 A
  • the boundary line between Tr 2 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 7 B is longer than the boundary line between Tr 2 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 7 A .
  • the geometry of semiconductor device 1 illustrated in FIG. 7 B can be said to be preferable to the geometry of semiconductor device 1 illustrated in FIG. 7 A .
  • the boundary line between the first inlet/outlet vertical MOS transistor located at the inlet or the outlet of the current path and the second inlet/outlet vertical MOS transistor located at the outlet or the inlet of the current path preferably consists of alternately connected one or more line segments parallel to a first of the four sides of semiconductor device 1 and one or more line segments parallel to a second of the four sides of semiconductor 1 that is orthogonal to the first side rather than consisting of a single line segment parallel to any of the four sides of semiconductor device 1 .
  • FIG. 8 is a plan view of one example of a geometry of semiconductor device 1 where N is three and the current paths defined by the specifications are (1) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the second vertical MOS transistor (Tr 2 ) and (2) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the third vertical MOS transistor (Tr 3 ), and (3) the current path between the second vertical MOS transistor (Tr 2 ) and the third vertical MOS transistor (Tr 3 ) is a current path not defined by the specifications.
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 consist of alternately connected one or more line segments parallel to a first of the four sides of semiconductor device 1 and one or more line segments parallel to a second of the four sides of semiconductor 1 that is orthogonal to the first side.
  • these boundary lines are step-shaped in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 each consist of a single line segment parallel to any of the four sides of semiconductor device 1 in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 8 is longer than the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 4 A
  • the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 8 is longer than the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 4 A .
  • the geometry of semiconductor device 1 illustrated in FIG. 8 can be said to be preferable to the geometry of semiconductor device 1 illustrated in FIG. 4 A .
  • FIG. 9 is a plan view of one example of a geometry of semiconductor device 1 where N is three and the current paths defined by the specifications are (1) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the second vertical MOS transistor (Tr 2 ), (2) the current path flowing between the first vertical MOS transistor (Tr 1 ) and the third vertical MOS transistor (Tr 3 ), and (3) the current path between the second vertical MOS transistor (Tr 2 ) and the third vertical MOS transistor (Tr 3 ).
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 consist of alternately connected one or more line segments parallel to a first of the four sides of semiconductor device 1 and one or more line segments parallel to a second of the four sides of semiconductor 1 that is orthogonal to the first side.
  • these boundary lines are step-shaped in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 and the boundary line between Tr 1 and Tr 3 each consist of a single line segment parallel to any of the four sides of semiconductor device 1 in a plan view of semiconductor layer 40 .
  • the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 9 is longer than the boundary line between Tr 1 and Tr 2 in the geometry of semiconductor device 1 illustrated in FIG. 7 A
  • the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 9 is longer than the boundary line between Tr 1 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 7 A
  • the boundary line between Tr 2 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 9 is longer than the boundary line between Tr 2 and Tr 3 in the geometry of semiconductor device 1 illustrated in FIG. 7 A .
  • the geometry of semiconductor device 1 illustrated in FIG. 9 can be said to be preferable to the geometry of semiconductor device 1 illustrated in FIG. 7 A .
  • XA refers to the maximum specified current [A] of the vertical MOS transistor positioned in that location.
  • FIG. 10 A , FIG. 10 B , FIG. 10 C , and FIG. 10 D are plan views of semiconductor device 1 where N is three.
  • first vertical MOS transistor 10 in a plan view of semiconductor layer 40 is denoted as S 1
  • second vertical MOS transistor 20 in a plan view of semiconductor layer 40 is denoted as S 2
  • SN the surface area of the N th vertical MOS transistor in a plan view of semiconductor layer 40
  • I 1 1 [A]
  • I2 1 [A]
  • I 3 1 [A].
  • S 1 :S 2 :S 3 I 2 :I 2 :I 2 .
  • I 1 1.5 [A]
  • I 2 1.5 [A]
  • I 3 1 [A].
  • S 1 :S 2 :S 3 1.5 2 :1.5 2 :1 2 .
  • I 1 2 [A]
  • I 2 1 [A]
  • I 3 1 [A].
  • S 1 :S 2 :S 3 3 2 :2 2 :1 2 .
  • FIG. 10 D is one example of a case in which I 1 >I 2 >I 3 .
  • I 1 3 [A]
  • I 2 2 [A]
  • I 3 1 [A].
  • S 1 :S 2 :S 3 3 2 :2 2 :1 2 .
  • FIG. 11 A , FIG. 11 B , FIG. 11 C , FIG. 11 D , FIG. 11 E , FIG. 11 F , FIG. 11 G , FIG. 11 H , FIG. 11 I , and FIG. 11 J are plan views of semiconductor device 1 where N is four.
  • I 1 1 [A]
  • I 2 1 [A]
  • I 3 1 [A]
  • I 4 1 [A].
  • S 1 :S 2 :S 3 :S 4 1 2 :I 2 :I 2 :I 2 .
  • I 1 1 [A]
  • I 2 1 [A]
  • I 3 1 [A]
  • I 4 0.3 [A].
  • S 1 :S 2 :S 3 :S 4 1 2 :1 2 :1 2 :0.3 2 .
  • I 1 1 [A]
  • I 2 1 [A]
  • I 3 0.6 [A]
  • I 4 0.6 [A].
  • S 1 :S 2 :S 3 :S 4 1 2 :1 2 :0.6 2 :0.6 2 .
  • I 1 1.5 [A]
  • I 2 0.8 [A]
  • I 3 0.8 [A]
  • I 4 0.8 [A].
  • S 1 :S 2 :S 3 :S 4 1.5 2 :0.8 2 :0.8 2 :0.8 2 .
  • I 1 3 [A]
  • I 2 1 [A]
  • I 3 1 [A]
  • I 4 1 [A].
  • S 1 :S 2 :S 3 :S 4 3 2 :I 2 :I 2 :I 2 .
  • I 1 1.4 [A]
  • I 2 1.1 [A]
  • I 3 0.5 [A]
  • I 4 0.5 [A].
  • S 1 :S 2 :S 3 :S 4 1.4 2 :1.1 2 :0.5 2 :0.5 2 .
  • I 1 2.5 [A]
  • I 2 1.3 [A]
  • I 3 0.7 [A]
  • I 4 0.5 [A].
  • S 1 :S 2 :S 3 :S 4 2.5 2 :1.3 2 :0.7 2 :0.5 2 .
  • FIG. 11 J is one example of a case in which I 1 >I 2 >I 3 >I 4 and I 1 ⁇ I 2 +I 3 +I 4 .
  • I 1 1.7 [A]
  • I 2 1.3 [A]
  • I 3 0.7 [A]
  • I 4 0.5 [A].
  • S 1 :S 2 :S 3 :S 4 1.7 2 :1.3 2 :0.7 2 :0.5 2 .
  • semiconductor device 1 in which the maximum specified currents of N vertical MOS transistors meet a specific condition will be described.
  • this semiconductor device 1 is also referred to as a first specific semiconductor device.
  • the first specific semiconductor device refers to semiconductor device 1 in which one of the N vertical MOS transistors is a specific vertical MOS transistor that satisfies the following condition: the maximum specified current is equal to the sum of the maximum specified currents of K (K is an integer greater than or equal to two and less than or equal to N ⁇ 1) vertical MOS transistors among the N vertical MOS transistors.
  • Such a first specific semiconductor device is suitable in cases where the current flowing to the specific vertical MOS transistor becomes the maximum specified current of that specific vertical MOS transistor when the maximum specified currents of the K vertical MOS transistors are applied to the respective current paths between the specific vertical MOS transistor and the K vertical MOS transistors.
  • semiconductor device 1 in which the maximum specified current of N vertical MOS transistors and the number and geometry of the source pads meet specific conditions will be described.
  • this semiconductor device 1 is also referred to as a second specific semiconductor device.
  • the second specific semiconductor device refers to semiconductor device 1 in which at least one of the N vertical MOS transistors is a specific vertical MOS transistor that satisfies the following conditions: (i) the at least one specific vertical MOS transistor includes a single source pad; (ii) the gate pad and the source pad included in the at least one specific vertical MOS transistor are circular in a plan view of semiconductor layer 40 ; and (iii) there is no gate pad or source pad included in the N vertical MOS transistors that is significantly smaller in surface area than the gate pad and the source pad of the at least one specific vertical MOS transistor.
  • Such a second specific semiconductor device is suitable in cases where the specific vertical MOS transistor is used as a transistor for monitoring the voltage of the common drain region of the N vertical MOS transistors. This is because it is sufficient if the specific vertical MOS transistor includes the minimum number of source pads required (i.e., one) and the one source pad is of minimum size, since the specific vertical MOS transistor does not need to carry a large current and only needs to carry a small current. This is also because the region for the source pads of other vertical MOS transistors is maximized due to the specific vertical MOS transistor including a single, minimum-size source pad.
  • FIG. 12 is a plan view illustrating one example of the configuration of the source pads of the second specific semiconductor device.
  • FIG. 12 illustrates an example where N is three and there is a single specific vertical MOS transistor.
  • the third vertical MOS transistor formed in region A 3 is the specific vertical MOS transistor
  • the first vertical MOS transistor formed in region A 1 and the second vertical MOS transistor formed in region A 2 are vertical MOS transistors that are not specific vertical MOS transistors.
  • the third vertical MOS transistor which is the specific vertical MOS transistor, includes only one source pad, namely third source pad 131 , and in a plan view of semiconductor layer 40 , there is no source pad or gate pad included in the three vertical MOS transistors that is significantly smaller in surface area than either of third source pad 131 or third gate pad 139 of the third vertical MOS transistor, which is the specific vertical MOS transistor.
  • FIG. 13 A and FIG. 13 B are plan views of semiconductor device 1 where N is three and semiconductor device 1 includes a single specific vertical MOS transistor, namely the third vertical MOS transistor.
  • I 1 1 [A]
  • I 2 1 [A]
  • I 3 1 [A].
  • FIG. 13 B is one example of a case in which I 1 >I 2 .
  • I 1 3 [A]
  • I 2 2 [A]
  • FIG. 14 A and FIG. 14 B are plan views of semiconductor device 1 where N is four and semiconductor device 1 includes two specific vertical MOS transistors, namely the third vertical MOS transistor and the fourth vertical MOS transistor.
  • I 1 1 [A]
  • I 2 1 [A]
  • FIG. 14 B is one example of a case in which I 1 >I 2 .
  • I 1 3 [A]
  • I 2 2 [A]
  • FIG. 15 is a plan view of semiconductor device 1 where N is three and gate pad 139 of the third inlet/outlet vertical MOS transistor is disposed in the above-described preferred location.
  • gate pad 139 of the third inlet/outlet vertical MOS transistor which is the third vertical MOS transistor, is located on an extension of the boundary line between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor in a plan view of semiconductor layer 40 .
  • Disposing gate pad 139 of the third inlet/outlet vertical MOS transistor in this location makes it possible to maximize the region for disposing source pad 131 of the third inlet/outlet vertical MOS transistor in third region A 3 on the second and third current paths in a plan view of semiconductor layer 40 , which in turn makes it possible to inhibit the resistance value of the second and third current paths.
  • the gate pad of the first inlet/outlet vertical MOS transistor is preferably not disposed near the boundary between the first inlet/outlet vertical MOS transistor and the third inlet/outlet vertical MOS transistor, and the gate pad of the second inlet/outlet vertical MOS transistor is preferably not disposed near the boundary between the second inlet/outlet vertical MOS transistor and the third inlet/outlet vertical MOS transistor.
  • FIG. 16 is a plan view of semiconductor device 1 illustrated in FIG. 15 , showing a region in which disposing gate pad 119 of the first inlet/outlet vertical MOS transistor and gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable when the maximum specified current of the third inlet/outlet vertical MOS transistor is smaller than the maximum specified current of the first inlet/outlet vertical MOS transistor and smaller than the maximum specified current of the second inlet/outlet vertical MOS transistor.
  • region B 1 is the region in which disposing gate pad 119 of the first inlet/outlet vertical MOS transistor and gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable.
  • gate pad 119 of the first inlet/outlet vertical MOS transistor is additionally preferably not disposed near the boundary between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor.
  • gate pad 119 of the first inlet/outlet vertical MOS transistor By not disposing gate pad 119 of the first inlet/outlet vertical MOS transistor in the above-described location, gate pad 119 can be inhibited from interfering with the current that flows in first current path, which makes it possible to inhibit the resistance value of the first current path.
  • gate pad 129 of the second inlet/outlet vertical MOS transistor is additionally preferably not disposed near the boundary between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor.
  • gate pad 129 of the second inlet/outlet vertical MOS transistor By not disposing gate pad 129 of the second inlet/outlet vertical MOS transistor in the above-described location, gate pad 129 can be inhibited from interfering with the current that flows in first current path, which makes it possible to inhibit the resistance value of the first current path.
  • FIG. 17 is a plan view of semiconductor device 1 illustrated in FIG. 15 , showing a region in which disposing gate pad 119 of the first inlet/outlet vertical MOS transistor and gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable when (i) the width of the first inlet/outlet vertical MOS transistor in a direction orthogonal to the boundary line between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor is larger than twice the diameter of gate pad 119 of the first inlet/outlet vertical MOS transistor in a plan view of semiconductor layer 40 , and (ii) the width of the second inlet/outlet vertical MOS transistor in a direction orthogonal to the boundary line between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor is larger than twice the diameter of gate pad 129 of the second inlet/outlet vertical MOS transistor in a plan view of semiconductor layer 40 .
  • region B 2 is the region in which disposing gate pad 119 of the first inlet/outlet vertical MOS transistor is not preferable
  • region B 3 is the region in which disposing gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable.
  • FIG. 18 is a plan view of semiconductor device 1 where N is three and the gate pad of the third inlet/outlet vertical MOS transistor is disposed in the above-described preferred location.
  • gate pad 139 of the third inlet/outlet vertical MOS transistor which is the third vertical MOS transistor, is located nearer to the boundary line between the first inlet/outlet vertical MOS transistor and the third vertical MOS transistor than to the boundary line between the second inlet/outlet vertical MOS transistor and the third vertical MOS transistor in a plan view of semiconductor layer 40 .
  • Disposing gate pad 139 of the third inlet/outlet vertical MOS transistor in this location makes it possible to maximize the region for disposing the source pad of the third inlet/outlet vertical MOS transistor in third region A 3 on the second current path in a plan view of semiconductor layer 40 , which in turn makes it possible to inhibit the resistance value of the second current path.
  • the gate pad of the second inlet/outlet vertical MOS transistor is preferably not disposed near the boundary between the second inlet/outlet vertical MOS transistor and the third inlet/outlet vertical MOS transistor.
  • FIG. 19 is a plan view of semiconductor device 1 illustrated in FIG. 18 , showing a region in which disposing gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable when the maximum specified current of the third inlet/outlet vertical MOS transistor is smaller than the maximum specified current of the first inlet/outlet vertical MOS transistor and smaller than the maximum specified current of the second inlet/outlet vertical MOS transistor.
  • region B 4 is the region in which disposing gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable.
  • gate pad 129 of the second inlet/outlet vertical MOS transistor is additionally preferably not disposed near the boundary between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor.
  • gate pad 129 of the second inlet/outlet vertical MOS transistor By not disposing gate pad 129 of the second inlet/outlet vertical MOS transistor in the above-described location, gate pad 129 can be inhibited from interfering with the current that flows in first current path, which makes it possible to inhibit the resistance value of the first current path.
  • FIG. 20 is a plan view of semiconductor device 1 illustrated in FIG. 18 , showing a region in which disposing gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable when the width of the second inlet/outlet vertical MOS transistor in a direction orthogonal to the boundary line between the first inlet/outlet vertical MOS transistor and the second inlet/outlet vertical MOS transistor is larger than twice the diameter of gate pad 129 of the second inlet/outlet vertical MOS transistor in a plan view of semiconductor layer 40 .
  • region B 5 is the region in which disposing gate pad 129 of the second inlet/outlet vertical MOS transistor is not preferable.
  • FIG. 21 A , FIG. 21 B , FIG. 21 C , FIG. 21 D , FIG. 21 E , FIG. 21 F , FIG. 21 G , and FIG. 21 H are plan views of semiconductor device 1 .
  • FIG. 21 A , FIG. 21 B , FIG. 21 C , FIG. 21 D , FIG. 21 E , FIG. 21 F , FIG. 21 G , and FIG. 21 H regions in which disposing gate pads is not preferable are illustrated as hatched regions. 1-5. Examples of Configurations Including Pads Connected to Common Drain Region
  • Semiconductor device 1 may further include, on the upper surface of semiconductor layer 40 , a drain pad connected to the common drain region of the N vertical MOS transistors.
  • FIG. 22 A is a cross-sectional view illustrating one example of the structure of semiconductor device 1 further including a drain pad.
  • FIG. 22 B is a plan view illustrating one example of the structure of semiconductor device 1 further including a drain pad. The cross-sectional view illustrated in FIG. 22 A is taken at I-I in FIG. 22 B .
  • semiconductor device 1 may further include drain pad 141 .
  • Semiconductor device 1 that further includes drain pad 141 includes high-concentration impurity layer 38 and drain electrode 81 , as illustrated in FIG. 22 A .
  • Drain electrode 81 includes portions 82 and 83 , and portion 82 is connected to high-concentration impurity layer 38 (to be described later) via portion 83 .
  • portion 82 of drain electrode 81 is a layer that is bonded to solder during reflow in the face-down mounting process.
  • portion 82 may comprise a metal material including one or more of nickel, titanium, tungsten, and palladium.
  • the surface of portion 82 may be plated with, for instance, gold.
  • Portion 83 of drain electrode 81 is a layer connecting portion 82 and high-concentration impurity layer 38 .
  • portion 83 may comprise a metal material including one or more of aluminum, copper, gold, and silver.
  • Drain pad 141 refers to the region where drain electrode 81 is partially exposed on the upper surface of semiconductor device 1 , and is also referred to as a terminal.
  • High-concentration impurity layer 38 is formed in contact with semiconductor substrate 32 , low-concentration impurity layer 33 , and portion 83 within semiconductor layer 40 , and contains impurities of the first conductivity type at a concentration higher than the concentration of impurities of the first conductivity type contained in semiconductor substrate 32 .
  • high-concentration impurity layer 38 electrically connects drain electrode 81 to semiconductor substrate 32 and low-concentration impurity layer 33 , which function as the common drain region for the N vertical MOS transistors.
  • vertical MOS transistors include, in addition to vertical MOS transistors, vertical bipolar transistors (BJTs) and vertical insulated gate bipolar transistors (IGBTs).
  • BJTs vertical bipolar transistors
  • IGBTs vertical insulated gate bipolar transistors
  • the term “source” may be replaced with “emitter”, the term “drain” may be replaced with “collector”, and the term “body” may be replaced with “base”. Additionally, the term “gate electrode” may be replaced with “base electrode”. If the vertical transistor is a vertical IGBT, in the above description, the term “source” may be replaced with “emitter”, and the term “drain” may be replaced with “collector”. Note that “vertical” refers to a structure in which a channel is formed in the vertical direction of the semiconductor device and current flows in the vertical direction in the channel.
  • semiconductor device 1 may include, instead of a drain pad, a common terminal that is connected to metal layer 30 formed in contact with the lower surface of semiconductor layer 40 (i.e., a common electrode common to the N vertical transistors) and is drawn to the upper surface side of semiconductor layer 40 .
  • the N vertical transistors themselves are provided with a control pad (corresponding to the gate pad in the vertical MOS transistor example) that connects to a control electrode (corresponding to the gate electrode in the vertical MOS transistor example) which controls the conduction of the vertical transistor, and one or more external connection pads (corresponding to the source pads in the vertical MOS transistor example) that connect to an external connection electrode (corresponding to the source electrode in the vertical MOS transistor example) through which the N vertical transistors receive current from outside or output current outside.
  • a control pad corresponding to the gate pad in the vertical MOS transistor example
  • a control electrode corresponding to the gate electrode in the vertical MOS transistor example
  • external connection pads corresponding to the source pads in the vertical MOS transistor example
  • the common terminal may be used as an external input terminal through which current flows into the N vertical transistors from the outside, and each of the one or more external connection pads of each of the N vertical transistors may be used as an external output terminal through which current flows out from the N vertical transistors to the outside.
  • the “lower surface” of semiconductor layer 40 refers to the other main surface.
  • FIG. 23 is a cross-sectional view of one example of the structure of semiconductor device 1 including vertical transistors and further including a common terminal.
  • semiconductor device 1 when semiconductor device 1 includes vertical transistors, semiconductor device 1 may further include common terminal 300 .
  • FIG. 24 is a circuit diagram illustrating one example of the configuration of battery protection system 100 according to Embodiment 2.
  • battery protection system 100 includes battery protection circuit 50 and charging/discharging control IC 60 .
  • Battery protection circuit 50 includes first semiconductor device 1 a , second semiconductor device 1 b , N ⁇ 1 battery cells 5 , first terminal 61 , and second terminal 62 .
  • Charging/discharging control IC 60 controls the charging/discharging of the N ⁇ 1 battery cells 5 by controlling first semiconductor device 1 a and second semiconductor device 1 b.
  • First semiconductor device 1 a is semiconductor device 1 described in detail in Embodiment 1, and includes N vertical MOS transistors.
  • the conducting state (ON state) and the non-conducting state (OFF state) of each vertical MOS transistor are controlled by charging/discharging control IC 60 .
  • FIG. 24 and subsequent figures arrows extending from the control IC to the semiconductor devices indicate that the signals controlling the semiconductor devices originate from the control IC.
  • the control IC is electrically connected to the gate pads of the vertical MOS transistors in the semiconductor devices to control the conducting state of each vertical MOS transistor, but arrows are used in FIG. 24 and subsequent figures to avoid overcomplicating the illustrations.
  • Second semiconductor device 1 b is semiconductor device 1 described in detail in Embodiment 1, and includes N vertical MOS transistors.
  • the conducting state and the non-conducting state of each vertical MOS transistor are controlled by charging/discharging control IC 60 .
  • First terminal 61 is connected to the one or more source pads of the single terminal-connected vertical MOS transistor 2 a among the N vertical MOS transistors included in first semiconductor device 1 a.
  • Second terminal 62 is connected to the one or more source pads of the single terminal-connected vertical MOS transistor 2 b among the N vertical MOS transistors included in second semiconductor device 1 b.
  • Each positive electrode of the N ⁇ 1 battery cells 5 is connected to the one or more source pads of a different one of the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 a among the N vertical MOS transistors included in first semiconductor device 1 a.
  • Each negative electrode of the N ⁇ 1 battery cells 5 is connected to the one or more source pads of a different one of the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 b among the N vertical MOS transistors included in second semiconductor device 1 b.
  • FIG. 25 A is a schematic diagram illustrating battery protection system 100 charging the N ⁇ 1 battery cells 5 .
  • the dashed arrows represent the respective charge paths of the N ⁇ 1 battery cells 5 .
  • charging/discharging control IC 60 charges the N ⁇ 1 battery cells 5 simultaneously and in parallel by placing the N ⁇ 1 vertical MOS transistors of first semiconductor device 1 a (the vertical MOS transistors surrounded by a dashed line in FIG. 25 A ) excluding terminal-connected vertical MOS transistor 2 a in a conducting state and placing terminal-connected vertical MOS transistor 2 b of second semiconductor device 1 b in a conducting state.
  • charging/discharging control IC 60 may selectively charge only one of the N ⁇ 1 battery cells 5 or a plurality but not all N ⁇ 1 battery cells 5 simultaneously and in parallel.
  • charging/discharging control IC 60 When charging/discharging control IC 60 is charging and detects an abnormality related to charging, charging/discharging control IC 60 stops the charging of the N ⁇ 1 battery cells 5 by switching terminal-connected vertical MOS transistor 2 b of second semiconductor device 1 b from a conducting state to a non-conducting state.
  • charging/discharging control IC 60 when charging/discharging control IC 60 is charging and detects an abnormality related to charging, among the N ⁇ 1 vertical MOS transistors of first semiconductor device 1 a (the vertical MOS transistors surrounded by a dashed line in FIG. 25 A ) excluding terminal-connected vertical MOS transistor 2 a , charging/discharging control IC 60 switches the vertical MOS transistor that is connected to battery cell 5 related to the detected abnormality from a conducting state to a non-conducting state to stop the charging of said battery cell 5 .
  • FIG. 25 B is a schematic diagram illustrating battery protection system 100 discharging the N ⁇ 1 battery cells 5 .
  • the dashed arrows represent the respective discharge paths of the N ⁇ 1 battery cells 5 .
  • charging/discharging control IC 60 discharges the N ⁇ 1 battery cells 5 simultaneously and in parallel by placing the N ⁇ 1 vertical MOS transistors of second semiconductor device 1 b (the vertical MOS transistors surrounded by a dashed line in FIG. 25 B ) excluding terminal-connected vertical MOS transistor 2 b in a conducting state and placing terminal-connected vertical MOS transistor 2 a of first semiconductor device 1 a in a conducting state.
  • charging/discharging control IC 60 may selectively discharge only one of the N ⁇ 1 battery cells 5 or a plurality but not all N ⁇ 1 battery cells 5 simultaneously and in parallel.
  • charging/discharging control IC 60 When charging/discharging control IC 60 is discharging and detects an abnormality related to discharging, charging/discharging control IC 60 stops the discharging of the N ⁇ 1 battery cells 5 by switching terminal-connected vertical MOS transistor 2 a of first semiconductor device 1 a from a conducting state to a non-conducting state.
  • charging/discharging control IC 60 when charging/discharging control IC 60 is discharging and detects an abnormality related to discharging, among the N ⁇ 1 vertical MOS transistors of second semiconductor device 1 b (the vertical MOS transistors surrounded by a dashed line in FIG. 25 B ) excluding terminal-connected vertical MOS transistor 2 b , charging/discharging control IC 60 switches the vertical MOS transistor that is connected to battery cell 5 related to the detected abnormality from a conducting state to a non-conducting state to stop the discharging of said battery cell 5 .
  • terminal-connected vertical MOS transistor 2 a is one inlet/outlet vertical MOS transistor
  • the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 a are the other inlet/outlet vertical MOS transistors, and thus N ⁇ 1 current paths are defined between the one inlet/outlet vertical MOS transistor and each of the other inlet/outlet vertical MOS transistors.
  • Terminal-connected vertical MOS transistor 2 a is either the one inlet/outlet vertical MOS transistor or the other inlet/outlet vertical MOS transistor in each and every defined N ⁇ 1 current path, i.e., is common to all of the defined N ⁇ 1 current paths.
  • the maximum specified currents (denoted as Ia [A]) of the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 a are equal.
  • the product specifications of semiconductor device 1 a state the conduction resistance (on-resistance) of each of the defined N ⁇ 1 current paths when the maximum specified current In flows through terminal-connected vertical MOS transistor 2 a and the maximum specified current Ia flows through each of the N ⁇ 1 vertical transistors excluding terminal-connected vertical MOS transistor 2 a . Since the N ⁇ 1 current paths are electrically equivalent, each conduction resistance (on-resistance; denoted as Ran [ ⁇ ]) is equal. Accordingly, the product specifications may state only one conduction resistance to avoid repetition. The current value used to evaluate conduction resistance (on-resistance) is described in the product specifications for each of the N vertical MOS transistors.
  • the current value used to evaluate conduction resistance is 50% of the maximum rated current specified for each of the N vertical MOS transistors or a current value less than or equal to said maximum rated current.
  • the current value specified in the product specifications as the current value to be passed through each of the N vertical MOS transistors may be taken as the maximum specified current for each of the N vertical MOS transistors.
  • the maximum rated current for each of the N vertical MOS transistors stated in the product specifications may be taken as the maximum specified current for each of the N vertical MOS transistors.
  • the surface areas (denoted as Sa) of all of the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 a are preferably equal, and the surface area (denoted as Sn) of terminal-connected vertical MOS transistor 2 a is preferably the largest surface area among the N vertical MOS transistors (Sn>Sa). This is because the maximum specified currents of all of the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 a are equal, and furthermore the maximum specified current of terminal-connected vertical MOS transistor 2 a is the largest.
  • battery protection system 100 is described as including first semiconductor device 1 a on the positive electrode side of the N ⁇ 1 battery cells 5 and second semiconductor device 1 b on the negative electrode side
  • the battery protection system according to Embodiment 2 may include only first semiconductor device 1 a on the positive electrode side of the N ⁇ 1 battery cells 5 , and may include only second semiconductor device 1 b on the negative electrode side of the N ⁇ 1 battery cells 5 .
  • FIG. 26 is a circuit diagram illustrating one example of the configuration of battery protection system 100 a according to Embodiment 2 including first semiconductor device 1 a on the positive electrode side of the N ⁇ 1 battery cells 5 .
  • battery protection system 100 a differs from battery protection system 100 in that battery protection circuit 50 has been changed to battery protection circuit 50 a and charging/discharging control IC 60 has been changed to charging control IC 60 a.
  • Battery protection circuit 50 a differs from battery protection circuit 50 in that second semiconductor device 1 b has been removed, and what second terminal 62 is connected to has been changed from the one or more source pads of terminal-connected vertical MOS transistor 2 b to the negative electrodes of the N ⁇ 1 battery cells 5 .
  • Charging control IC 60 a controls the charging of the N ⁇ 1 battery cells 5 by controlling first semiconductor device 1 a.
  • charging control IC 60 a charges the N ⁇ 1 battery cells 5 simultaneously and in parallel by placing the N ⁇ 1 vertical MOS transistors of first semiconductor device 1 a excluding terminal-connected vertical MOS transistor 2 a in a conducting state.
  • charging control IC 60 a may selectively charge only one of the N ⁇ 1 battery cells 5 or a plurality but not all N ⁇ 1 battery cells 5 simultaneously and in parallel.
  • charging control IC 60 a when charging control IC 60 a is charging and detects an abnormality related to charging, among the N ⁇ 1 vertical MOS transistors of first semiconductor device 1 a excluding terminal-connected vertical MOS transistor 2 a , charging control IC 60 a switches the vertical MOS transistor that is connected to battery cell 5 related to the detected abnormality from a conducting state to a non-conducting state to stop the charging of said battery cell 5 .
  • FIG. 27 is a circuit diagram illustrating one example of the configuration of battery protection system 100 b according to Embodiment 2 including second semiconductor device 1 b on the negative electrode side of the N ⁇ 1 battery cells 5 .
  • battery protection system 100 b differs from battery protection system 100 in that battery protection circuit 50 has been changed to battery protection circuit 50 b and charging/discharging control IC 60 has been changed to discharging control IC 60 b.
  • Battery protection circuit 50 b differs from battery protection circuit 50 in that first semiconductor device 1 a has been removed, and what first terminal 61 is connected to has been changed from the one or more source pads of terminal-connected vertical MOS transistor 2 a to the positive electrodes of the N ⁇ 1 battery cells 5 .
  • Discharging control IC 60 b controls the discharging of the N ⁇ 1 battery cells 5 by controlling second semiconductor device 1 b.
  • discharging control IC 60 b discharges the N ⁇ 1 battery cells 5 simultaneously and in parallel by placing the N ⁇ 1 vertical MOS transistors of second semiconductor device 1 b excluding terminal-connected vertical MOS transistor 2 b in a conducting state.
  • discharging control IC 60 b may selectively discharge only one of the N ⁇ 1 battery cells 5 or a plurality but not all N ⁇ 1 battery cells 5 simultaneously and in parallel.
  • discharging control IC 60 b when discharging control IC 60 b is discharging and detects an abnormality related to discharging, among the N ⁇ 1 vertical MOS transistors of second semiconductor device 1 b excluding terminal-connected vertical MOS transistor 2 b , discharging control IC 60 b switches the vertical MOS transistor that is connected to battery cell 5 related to the detected abnormality from a conducting state to a non-conducting state to stop the charging of said battery cell 5 .
  • FIG. 28 is a circuit diagram illustrating one example of the configuration of battery protection system 100 c according to Embodiment 3.
  • battery protection system 100 c includes battery protection circuit 50 c and charging/discharging control IC 60 c.
  • Battery protection circuit 50 c includes first semiconductor device 1 c , second semiconductor device 1 d , N battery cells 5 , 2N-2 semiconductor switching devices 9 , first terminal 61 c , second terminal 62 c , and third terminal 63 c.
  • Charging/discharging control IC 60 c controls the charging/discharging of the N battery cells 5 by controlling first semiconductor device 1 c , second semiconductor device 1 d , and the 2N-2 semiconductor switching devices 9 .
  • First semiconductor device 1 c is semiconductor device 1 described in detail in Embodiment 1, and includes N vertical MOS transistors.
  • the conducting state and the non-conducting state of each vertical MOS transistor are controlled by charging/discharging control IC 60 c.
  • Second semiconductor device 1 d is semiconductor device 1 described in detail in Embodiment 1, and includes three vertical MOS transistors. The conducting state and the non-conducting state of each vertical MOS transistor are controlled by charging/discharging control IC 60 c.
  • Each of the 2N-2 semiconductor switching devices 9 includes two vertical MOS transistors that share a drain region with each other.
  • the conducting state and the non-conducting state of each vertical MOS transistor are controlled by charging/discharging control IC 60 c.
  • each of the 2N-2 semiconductor switching devices 9 when one vertical MOS transistor is placed in a conducting state, the current path from the source electrode of the other vertical MOS transistor to the source electrode of the one vertical MOS transistor enters a conducting state, and when the other vertical MOS transistor is placed in a conducting state, the current path from the source electrode of the one vertical MOS transistor to the source electrode of the other vertical MOS transistor enters a conducting state.
  • N battery cells are connected in series.
  • the N ⁇ 1 battery cells 5 excluding battery cell 5 a located at the negative electrode end are connected in series through semiconductor switching devices 9 , and battery cell 5 a and battery cell 5 b located next to battery cell 5 a in the series connection are connected in series through second semiconductor device 1 d.
  • First terminal 61 c is connected to the one or more source pads of the single terminal-connected vertical MOS transistor 2 c among the N vertical MOS transistors included in first semiconductor device 1 c , and to the one or more source pads of the single terminal-connected vertical MOS transistor 2 d among the three vertical MOS transistors included in second semiconductor device 1 d.
  • Second terminal 62 c is connected to the negative electrodes of the N battery cells 5 .
  • the negative electrode of each battery cell 5 is connected to second terminal 62 c via semiconductor switching device 9 .
  • Third terminal 63 c is connected to the positive electrode of battery cell 5 c located at the positive electrode end of the N battery cells 5 connected in series.
  • each positive electrode of the N ⁇ 1 battery cells 5 excluding battery cell 5 a is connected to the one or more source pads of a different one of the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 c among the N vertical MOS transistors included in first semiconductor device 1 c.
  • the positive electrode of battery cell 5 a is connected to the one or more source pads of one of the two vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 d among the three vertical MOS transistors included in second semiconductor device 1 d
  • the negative electrode of battery cell 5 b is connected to the one or more source pads of the other of the two vertical MOS transistors.
  • FIG. 29 A is a schematic diagram illustrating battery protection system 100 c charging the N battery cells 5 in series.
  • the dashed arrow represents the charge path of the N battery cells 5 .
  • charging/discharging control IC 60 c charges the N battery cells 5 simultaneously and in series by placing the following in a conducting state: in the N-2 semiconductor switching devices 9 disposed between the N ⁇ 1 battery cells 5 excluding battery cell 5 a among the N battery cells 5 , the vertical MOS transistors on the sides connected to the positive electrodes of battery cells 5 ; in second semiconductor device 1 d , the vertical MOS transistor on the side connected to the positive electrode of battery cell 5 a ; and in semiconductor switching device 9 disposed between battery cell 5 a and second terminal 62 c , the vertical MOS transistor on the side connected to the second terminal 62 c side.
  • charging/discharging control IC 60 c When charging/discharging control IC 60 c is serial charging and detects an abnormality related to charging, for example, charging/discharging control IC 60 c stops the charging of the N battery cells by switching the vertical MOS transistor on the side connected to the positive electrode of battery cell 5 a in second semiconductor device 1 d from a conducting state to a non-conducting state.
  • FIG. 29 B is a schematic diagram illustrating battery protection system 100 c discharging the N battery cells 5 .
  • the dashed arrows represent the respective discharge paths of the N battery cells 5 .
  • charging/discharging control IC 60 c discharges the N battery cells 5 simultaneously and in parallel by placing the following in a conducting state: in the N semiconductor switching devices 9 disposed between the respective negative electrodes of the N battery cells 5 and second terminal 62 c , the vertical MOS transistors on the sides connected to the negative electrodes of battery cells 5 ; terminal-connected vertical MOS transistor 2 d of second semiconductor device 1 d ; terminal-connected vertical MOS transistor 2 c of first semiconductor device 1 c.
  • charging/discharging control IC 60 c may selectively discharge only one of the N battery cells 5 or a plurality but not all N battery cells 5 simultaneously and in parallel.
  • charging/discharging control IC 60 c When charging/discharging control IC 60 c is discharging and detects an abnormality related to discharging, for example, in semiconductor switching device 9 to which the negative electrode of battery cell 5 related to the detected abnormality is connected among the N semiconductor switching devices 9 disposed between the respective negative electrodes of the N battery cells 5 and second terminal 62 c , charging/discharging control IC 60 c switches the vertical MOS transistor on the side connected to the negative electrode of said battery cell 5 from a conducting state to a non-conducting state to stop the charging of said battery cell 5 .
  • FIG. 29 C is a schematic diagram illustrating battery protection system 100 c charging the N battery cells 5 in parallel.
  • the dashed arrows represent the respective charge paths of the N battery cells 5 .
  • charging/discharging control IC 60 c charges the N battery cells 5 simultaneously and in parallel by placing the following in a conducting state: in the N semiconductor switching devices 9 disposed between the respective negative electrodes of the N battery cells 5 and second terminal 62 c , the vertical MOS transistors on the sides connected to second terminal 62 c ; in second semiconductor device 1 d , the vertical MOS transistor connected to the positive electrode of battery cell 5 a ; and in first semiconductor device 1 c , the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 c.
  • charging/discharging control IC 60 c may selectively charge only one of the N battery cells 5 or a plurality but not all N battery cells 5 simultaneously and in parallel.
  • charging/discharging control IC 60 c When charging/discharging control IC 60 c is parallel charging and detects an abnormality related to charging, for example, in semiconductor switching device 9 to which the negative electrode of battery cell 5 related to the detected abnormality is connected among the N semiconductor switching devices 9 disposed between the respective negative electrodes of the N battery cells 5 and second terminal 62 c , charging/discharging control IC 60 c switches the vertical MOS transistor on the side connected to second terminal 62 c from a conducting state to a non-conducting state to stop the charging of said battery cell 5 .
  • second semiconductor device 1 d according to Embodiment 3 will be discussed.
  • three current paths are defined by each possible pair of the three vertical MOS transistors serving as one and the other inlet/outlet vertical MOS transistors.
  • the current path with the vertical MOS transistor connected to the negative electrode of battery cell 5 b and the vertical MOS transistor connected to the positive electrode of battery cell 5 a serving as one and the other inlet/outlet vertical MOS transistors is used in serial charging as illustrated in FIG. 29 A , it carries a large current.
  • the maximum specified currents (denoted as Ia [A]) of the vertical MOS transistor connected to the negative electrode of battery cell 5 b and the vertical MOS transistor connected to the positive electrode of battery cell 5 a are equal and greater than the maximum specified current (denoted as It [A]) of terminal-connected vertical MOS transistor 2 d (Ia>It).
  • the product specifications for second semiconductor device 1 d state the respective conduction resistances (on-resistances) in the three defined current paths.
  • the product specifications for second semiconductor device 1 d also state the conduction resistance (on-resistance; denoted as Raa[ ⁇ ]) when Ia flows for the current path whose one and the other inlet/outlet vertical MOS transistors are the vertical MOS transistor connected to the negative electrode of battery cell 5 b and the vertical MOS transistor connected to the positive electrode of battery cell 5 a .
  • the product specifications for second semiconductor device 1 d further state the conduction resistance (on-resistance; denoted as Rat[ ⁇ ]) when It flows for the current path whose one and the other inlet/outlet vertical MOS transistors are the vertical MOS transistor connected to the negative electrode of battery cell 5 b and terminal-connected vertical MOS transistor 2 d .
  • the product specifications for second semiconductor device 1 d similarly state the conduction resistance (on-resistance; Rat[ ⁇ ]) when It flows for the current path whose one and the other inlet/outlet vertical MOS transistors are the vertical MOS transistor connected to the positive electrode of battery cell 5 a and terminal-connected vertical MOS transistor 2 d .
  • the product specifications may state only one conduction resistance to avoid repetition.
  • the current value used to evaluate conduction resistance (on-resistance) is described in the product specifications for each of the three vertical MOS transistors.
  • the current value used to evaluate conduction resistance (on-resistance) is 50% of the maximum rated current specified for each of the three vertical MOS transistors or a current value less than or equal to said maximum rated current.
  • the current value specified in the product specifications as the current value to be passed through each of the three vertical MOS transistors may be taken as the maximum specified current for each of the three vertical MOS transistors.
  • the maximum rated current for each of the three vertical MOS transistors stated in the product specifications may be taken as the maximum specified current for each of the three vertical MOS transistors.
  • FIG. 30 A , FIG. 31 A , and FIG. 32 A are circuit diagrams illustrating specific examples of battery protection circuits according to Embodiment 3, which utilize semiconductor device 1 .
  • FIG. 30 B , FIG. 31 B , and FIG. 32 B are circuit diagrams illustrating specific examples of battery protection circuits according to conventional examples, which do not utilize semiconductor device 1 , i.e., are circuits of only semiconductor switching devices 9 .
  • FIG. 30 A is a circuit diagram illustrating a first disclosed example which is one example of a battery protection circuit according to Embodiment 3 that can achieve serial charging and parallel discharging of two battery cells 5
  • FIG. 30 B is a circuit diagram illustrating a first conventional example which is one example of a battery protection circuit according to a conventional example that can achieve a similar function.
  • the first disclosed example can achieve a similar function with fewer components than the first conventional example.
  • FIG. 31 A is a circuit diagram illustrating a second disclosed example which is one example of a battery protection circuit according to Embodiment 3 that can achieve serial charging and parallel discharging of three battery cells 5
  • FIG. 31 B is a circuit diagram illustrating a second conventional example which is one example of a battery protection circuit according to a conventional example that can achieve a similar function.
  • the second disclosed example can achieve a similar function with fewer components than the second conventional example.
  • FIG. 32 A is a circuit diagram illustrating a third disclosed example which is one example of a battery protection circuit according to Embodiment 3 that can achieve serial charging and parallel discharging of four battery cells 5
  • FIG. 32 B is a circuit diagram illustrating a third conventional example which is one example of a battery protection circuit according to a conventional example that can achieve a similar function.
  • the third disclosed example can achieve a similar function with fewer components than the third conventional example.
  • FIG. 33 A is a schematic diagram illustrating battery protection circuit 50 ca according to the second disclosed example charging three battery cells 5 in series.
  • battery protection circuit 50 ca can supply out the voltage on the positive electrode side of battery cell 5 ca from first terminal 61 c while charging battery cell 5 cc , battery cell 5 cb , and battery cell 5 ca in series, as a result of 15 V being applied to third terminal 63 c and second terminal 62 c being grounded.
  • FIG. 33 B is a schematic diagram illustrating battery protection circuit 50 ca stopping the serial charging of the three battery cells 5 and starting to supply out the voltage on the positive electrode side of battery cell 5 ca from first terminal 61 c.
  • FIG. 33 C is a schematic diagram illustrating battery protection circuit 50 ca charging battery cell 5 ca.
  • battery protection circuit 50 ca can supply out the voltage on the positive electrode side of battery cell 5 ca from first terminal 61 c while charging battery cell 5 ca , as a result of 5 V being applied to third terminal 63 c and second terminal 62 c being grounded.
  • FIG. 33 D is a schematic diagram illustrating battery protection circuit 50 ca discharging three battery cells 5 in parallel.
  • FIG. 34 is a circuit diagram illustrating one example of the configuration of battery protection system 100 d according to Embodiment 4.
  • battery protection system 100 d includes battery protection circuit 50 d and charging/discharging control IC 60 d.
  • Battery protection circuit 50 d includes first semiconductor device 1 e , second semiconductor device 1 f , N ⁇ 1 battery cells 5 , 2N-4 semiconductor switching devices 9 , first terminal 61 d , second terminal 62 d , and third terminal 63 d.
  • Charging/discharging control IC 60 d controls the charging/discharging of the N ⁇ 1 battery cells 5 by controlling first semiconductor device 1 e , second semiconductor device 1 f , and the 2N-4 semiconductor switching devices 9 .
  • First semiconductor device 1 e is semiconductor device 1 described in detail in Embodiment 1, and includes N vertical MOS transistors.
  • the conducting state and the non-conducting state of each vertical MOS transistor are controlled by charging/discharging control IC 60 d.
  • Second semiconductor device 1 f is semiconductor device 1 described in detail in Embodiment 1, and includes three vertical MOS transistors. The conducting state and the non-conducting state of each vertical MOS transistor are controlled by charging/discharging control IC 60 d.
  • the 2N-4 semiconductor switching devices 9 are controlled by charging/discharging control IC 60 d.
  • the N ⁇ 1 battery cells are connected in series.
  • the N-2 battery cells 5 excluding battery cell 5 d located at the negative electrode end are connected in series through semiconductor switching devices 9 , and battery cell 5 d and battery cell 5 e located next to battery cell 5 d in the series connection are connected in series through second semiconductor device 1 f.
  • First terminal 61 d is connected to the one or more source pads of the single terminal-connected vertical MOS transistor 2 e among the N vertical MOS transistors included in first semiconductor device 1 e , and to the one or more source pads of the single terminal-connected vertical MOS transistor 2 f among the three vertical MOS transistors included in second semiconductor device 1 f.
  • Second terminal 62 d is connected to the negative electrodes of the N ⁇ 1 battery cells 5 .
  • the negative electrode of each battery cell 5 is connected to second terminal 62 d via semiconductor switching device 9 .
  • Third terminal 63 d is connected to battery cell 5 f located at the positive electrode end of the N ⁇ 1 battery cells 5 connected in series.
  • Each positive electrode of the N ⁇ 1 battery cells 5 is connected to the one or more source pads of a different one of the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 e among the N vertical MOS transistors included in first semiconductor device 1 e.
  • the positive electrode of battery cell 5 d is connected to the one or more source pads of one of the two vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 f among the three vertical MOS transistors included in second semiconductor device 1 f
  • the negative electrode of battery cell 5 e is connected to the one or more source pads of the other of the two vertical MOS transistors.
  • FIG. 35 A is a schematic diagram illustrating battery protection system 100 d charging the N ⁇ 1 battery cells 5 in series.
  • the dashed arrow represents the charge path of the N ⁇ 1 battery cells 5 .
  • charging/discharging control IC 60 d charges the N ⁇ 1 battery cells 5 simultaneously and in series by placing the following in a conducting state: in the N-3 semiconductor switching devices 9 disposed between the N-2 battery cells 5 excluding battery cell 5 d among the N ⁇ 1 battery cells 5 , the vertical MOS transistors on the sides connected to the positive electrodes of battery cells 5 ; in second semiconductor device 1 f , the vertical MOS transistor on the side connected to the positive electrode of battery cell 5 d ; and in semiconductor switching device 9 disposed between battery cell 5 d and second terminal 62 d , the vertical MOS transistor on the side connected to the second terminal 62 d side.
  • charging/discharging control IC 60 d When charging/discharging control IC 60 d is serial charging and detects an abnormality related to charging, for example, charging/discharging control IC 60 d stops the charging of the N ⁇ 1 battery cells by switching the vertical MOS transistor on the side connected to the positive electrode of battery cell 5 d in second semiconductor device 1 f from a conducting state to a non-conducting state.
  • FIG. 35 B is a schematic diagram illustrating battery protection system 100 d discharging the N ⁇ 1 battery cells 5 .
  • the dashed arrows represent the respective discharge paths of the N ⁇ 1 battery cells 5 .
  • charging/discharging control IC 60 d discharges the N ⁇ 1 battery cells 5 simultaneously and in parallel by placing the following in a conducting state: in the N ⁇ 1 semiconductor switching devices 9 disposed between the respective negative electrodes of the N ⁇ 1 battery cells 5 and second terminal 62 d , the vertical MOS transistors on the sides connected to the negative electrodes of battery cells 5 ; and terminal-connected vertical MOS transistor 2 e of first semiconductor device 1 e.
  • charging/discharging control IC 60 d may selectively discharge only one of the N ⁇ 1 battery cells 5 or a plurality but not all N ⁇ 1 battery cells 5 simultaneously and in parallel.
  • charging/discharging control IC 60 d When charging/discharging control IC 60 d is discharging and detects an abnormality related to discharging, for example, in semiconductor switching device 9 to which the negative electrode of battery cell 5 related to the detected abnormality is connected among the N ⁇ 1 semiconductor switching devices 9 disposed between the respective negative electrodes of the N ⁇ 1 battery cells 5 and second terminal 62 d , charging/discharging control IC 60 d switches the vertical MOS transistor on the side connected to the negative electrode of said battery cell 5 from a conducting state to a non-conducting state to stop the charging of said battery cell 5 .
  • FIG. 35 C is a schematic diagram illustrating battery protection system 100 d charging the N ⁇ 1 battery cells 5 in parallel.
  • the dashed arrows represent the respective charge paths of the N ⁇ 1 battery cells 5 .
  • charging/discharging control IC 60 d charges the N ⁇ 1 battery cells 5 simultaneously and in parallel by placing the following in a conducting state: in the N ⁇ 1 semiconductor switching devices 9 disposed between the respective negative electrodes of the N ⁇ 1 battery cells 5 and second terminal 62 d , the vertical MOS transistors on the sides connected to second terminal 62 d ; and in first semiconductor device 1 e , the N ⁇ 1 vertical MOS transistors excluding terminal-connected vertical MOS transistor 2 e.
  • charging/discharging control IC 60 d may selectively charge only one of the N ⁇ 1 battery cells 5 or a plurality but not all N ⁇ 1 battery cells 5 simultaneously and in parallel.
  • charging/discharging control IC 60 d When charging/discharging control IC 60 d is parallel charging and detects an abnormality related to charging, for example, in semiconductor switching device 9 to which the negative electrode of battery cell 5 related to the detected abnormality is connected among the N ⁇ 1 semiconductor switching devices 9 disposed between the respective negative electrodes of the N ⁇ 1 battery cells 5 and second terminal 62 d , charging/discharging control IC 60 d switches the vertical MOS transistor on the side connected to second terminal 62 d from a conducting state to a non-conducting state to stop the charging of said battery cell 5 .
  • FIG. 36 , FIG. 39 , and FIG. 40 are circuit diagrams illustrating specific examples of battery protection circuits according to Embodiment 4, which utilize semiconductor device 1 .
  • FIG. 36 is a circuit diagram illustrating a fourth disclosed example which is one example of a battery protection circuit according to Embodiment 4 that can achieve serial charging and parallel discharging of two battery cells 5 .
  • the first conventional example illustrated in FIG. 30 B is an example of a battery protection circuit that has a similar function and does not utilize semiconductor device 1 .
  • the fourth disclosed example can achieve a similar function with fewer components than the first conventional example.
  • FIG. 37 A and FIG. 37 B are each one example of a plan view of first semiconductor device 1 according to the fourth disclosed example.
  • FIG. 38 A and FIG. 38 B are each one example of a plan view of second semiconductor device 1 according to the fourth disclosed example.
  • surface area S 1 of the terminal-connected vertical MOS transistor is preferably smaller than surface areas S 2 and S 3 of the other two vertical MOS transistors, and surface areas S 2 and S 3 of the other two vertical MOS transistors are preferably equal.
  • FIG. 39 is a circuit diagram illustrating a fifth disclosed example which is one example of a battery protection circuit according to Embodiment 4 that can achieve serial charging and parallel discharging of three battery cells 5 .
  • the second conventional example illustrated in FIG. 31 B is an example of a battery protection circuit that has a similar function and does not utilize semiconductor device 1 .
  • the fifth disclosed example can achieve a similar function with fewer components than the second conventional example.
  • FIG. 40 is a circuit diagram illustrating a sixth disclosed example which is one example of a battery protection circuit according to Embodiment 4 that can achieve serial charging and parallel discharging of four battery cells 5 .
  • the third conventional example illustrated in FIG. 32 B is an example of a battery protection circuit that has a similar function and does not utilize semiconductor device 1 .
  • the sixth disclosed example can achieve a similar function with fewer components than the third conventional example.
  • FIG. 41 A is a schematic diagram illustrating battery protection circuit 50 da according to the fifth disclosed example charging three battery cells 5 in series.
  • battery protection circuit 50 da can supply out the voltage on the positive electrode side of battery cell 5 da from first terminal 61 d while charging battery cell 5 dc , battery cell 5 db , and battery cell 5 da in series, as a result of 15 V being applied to third terminal 63 d and second terminal 62 d being grounded.
  • FIG. 41 B is a schematic diagram illustrating battery protection circuit 50 da stopping the serial charging of the three battery cells 5 and starting to supply out the voltage on the positive electrode side of battery cell 5 da from first terminal 61 d.
  • FIG. 41 C is a schematic diagram illustrating battery protection circuit 50 da charging battery cell 5 da.
  • battery protection circuit 50 da can supply out the voltage on the positive electrode side of battery cell 5 da from first terminal 61 d while charging battery cell 5 da , as a result of 5 V being applied to third terminal 63 d and second terminal 62 d being grounded.
  • FIG. 41 D is a schematic diagram illustrating battery protection circuit 50 da discharging three battery cells 5 in parallel.
  • FIG. 42 is a circuit diagram illustrating one example of the configuration of battery protection system 100 e according to Embodiment 5.
  • battery protection system 100 e includes battery protection circuit 50 e , battery cell 5 , and power management circuit 80 .
  • Power management circuit 80 includes an IC including a function of supplying power to the functional circuits of a main device (not illustrated in the drawings) connected to the above components.
  • the functional circuits of the main device are, for example, Bluetooth (registered trademark) circuits, Wi-Fi (registered trademark) circuits, LiDAR circuits, and other functional circuits.
  • Battery protection circuit 50 e includes first semiconductor device 1 ea , second semiconductor device 1 eb , protection IC 70 ea , protection IC 70 eb , first terminal 71 , second terminal 72 , third terminal 73 , fourth terminal 74 , fifth terminal 75 , and sixth terminal 76 .
  • Protection IC 70 ea controls the charging/discharging of battery cell 5 by controlling first semiconductor device 1 ea based on the voltage of battery cell 5 .
  • Protection IC 70 eb controls the charging/discharging of battery cell 5 by controlling second semiconductor device 1 eb based on the voltage of battery cell 5 .
  • First semiconductor device 1 ea is, among semiconductor devices 1 described in detail in Embodiment 1, second specific semiconductor device 1 of the type that includes a specific vertical MOS transistor.
  • First semiconductor device 1 ea includes three vertical MOS transistors, one of which is a specific vertical MOS transistor.
  • the conducting state and the non-conducting state of each vertical MOS transistor are controlled by protection IC 70 ea . Only the specific vertical MOS transistor may be controlled to be in a conducting state or a non-conducting state by an IC, in power management circuit 80 , which accepts the output voltage of the specific vertical MOS transistor.
  • Second semiconductor device 1 eb is, among semiconductor devices 1 described in detail in Embodiment 1, second specific semiconductor device 1 of the type that includes a specific vertical MOS transistor.
  • First semiconductor device 1 eb includes three vertical MOS transistors, one of which is a specific vertical MOS transistor.
  • the conducting state and the non-conducting state of each vertical MOS transistor are controlled by protection IC 70 eb .
  • Only the specific vertical MOS transistor may be controlled to be in a conducting state or a non-conducting state by an IC, in power management circuit 80 , which accepts the output voltage of the specific vertical MOS transistor.
  • First terminal 71 is connected to the source pad of the specific vertical MOS transistor in first semiconductor device 1 ea . Note that a resistor that limits current may be provided between the source pad of the specific vertical MOS transistor in first semiconductor device 1 ea and first terminal 71 .
  • Second terminal 72 is connected to the one or more source pads of one of the two vertical MOS transistors excluding the specific vertical MOS transistor among the three vertical MOS transistors included in first semiconductor device 1 ea . Note that a resistor that limits current may be provided between the source pad of the specific vertical MOS transistor in first semiconductor device 1 ea and second terminal 72 .
  • Third terminal 73 is connected to the one or more source pads of the other of the two vertical MOS transistors excluding the specific vertical MOS transistor among the three vertical MOS transistors included in first semiconductor device 1 ea.
  • Fourth terminal 74 is connected to the source pad of the specific vertical MOS transistor in second semiconductor device 1 eb.
  • Fifth terminal 75 is connected to the one or more source pads of one of the two vertical MOS transistors excluding the specific vertical MOS transistor among the three vertical MOS transistors included in second semiconductor device 1 eb.
  • Sixth terminal 76 is connected to the one or more source pads of the other of the two vertical MOS transistors excluding the specific vertical MOS transistor among the three vertical MOS transistors included in second semiconductor device 1 eb.
  • the positive electrode of battery cell 5 is connected to third terminal 73 and the negative electrode is connected to sixth terminal 76 .
  • Power management circuit 80 is connected to first terminal 71 , second terminal 72 , fourth terminal 74 , and fifth terminal 75 . Through second terminal 72 and fifth terminal 75 , power management circuit 80 applies charging current to battery cell 5 via battery protection circuit 50 e when charging, and receives discharging current from battery cell 5 via battery protection circuit 50 e when discharging. Power management circuit 80 also receives enough current through first terminal 71 and fourth terminal 74 to monitor the voltage of battery cell 5 .
  • battery protection system 100 e is described as including protection IC 70 ea and protection IC 70 eb in battery protection circuit 50 e , but battery protection system 100 e is not necessarily limited to a configuration in which battery protection circuit 50 e includes protection IC 70 ea and protection IC 70 eb.
  • battery protection system 100 e may include protection IC 70 ea and protection IC 70 eb outside battery protection circuit 50 e.
  • FIG. 43 is a circuit diagram illustrating one example of the configuration of battery protection system 100 f according to Embodiment 6.
  • battery protection system 100 f includes battery protection circuit 50 f , battery cell 5 , and power management circuit 80 f .
  • Power management circuit 80 f includes an IC including a function of supplying power to the functional circuits of a main device (not illustrated in the drawings) connected to the above components.
  • the functional circuits of the main device are, for example, Bluetooth (registered trademark) circuits, Wi-Fi (registered trademark) circuits, LiDAR circuits, and other functional circuits.
  • Battery protection circuit 50 f includes first semiconductor device 1 fa , semiconductor switching device 9 , protection IC 70 fa , protection IC 70 fb , first terminal 71 f , second terminal 72 f , third terminal 73 f , and fourth terminal 74 f.
  • Protection IC 70 fa controls the charging/discharging of battery cell 5 by controlling first semiconductor device 1 fa based on the voltage of battery cell 5 .
  • Protection IC 70 fb controls the charging/discharging of battery cell 5 by controlling semiconductor switching device 9 based on the voltage of battery cell 5 .
  • First semiconductor device 1 fa is, among semiconductor devices 1 described in detail in Embodiment 1, second specific semiconductor device 1 of the type that includes a specific vertical MOS transistor.
  • First semiconductor device 1 fa includes three vertical MOS transistors, one of which is a specific vertical MOS transistor.
  • the conducting state and the non-conducting state of each vertical MOS transistor are controlled by protection IC 70 fa .
  • the current path through the specific vertical MOS transistor is used to charge battery cell 5 at a smaller current than the normal charging current.
  • the current path through the specific vertical MOS transistor is used to discharge battery cell 5 at a smaller current than the normal discharging current.
  • the smaller current may be adjusted by the conduction resistance of the specific vertical MOS transistor or a resistor included on the source pad side of the specific vertical MOS transistor, or by pulsed control of the voltage applied to the gate pad of the specific vertical MOS transistor.
  • Protection IC 70 fb controls the conducting state and the non-conducting state of each vertical MOS transistor in semiconductor switching device 9 .
  • First terminal 71 f is connected to the one or more source pads of one of the two vertical MOS transistors excluding the specific vertical MOS transistor among the three vertical MOS transistors included in first semiconductor device 1 fa . Note that a sense resistor or another battery protection circuit may be provided between first terminal 71 f and first semiconductor device 1 fa.
  • Second terminal 72 f is connected to the one or more source pads of the other of the two vertical MOS transistors excluding the specific vertical MOS transistor among the three vertical MOS transistors included in first semiconductor device 1 fa.
  • Third terminal 73 f is connected to the one or more source pads of one of the two vertical MOS transistors included in semiconductor switching device 9 .
  • Fourth terminal 74 f is connected to the one or more source pads of the other of the two vertical MOS transistors included in semiconductor switching device 9 .
  • the positive electrode of battery cell 5 is connected to first terminal 71 f and the negative electrode is connected to third terminal 73 f.
  • Power management circuit 80 f is connected to second terminal 72 f and fourth terminal 74 f . Through second terminal 72 f and fourth terminal 74 f , power management circuit 80 f applies charging current to battery cell 5 via battery protection circuit 50 f when charging, and receives discharging current from battery cell 5 via battery protection circuit 50 f when discharging.
  • battery protection system 100 f is described as including protection IC 70 fa and protection IC 70 fb in battery protection circuit 50 f , but battery protection system 100 f is not necessarily limited to a configuration in which battery protection circuit 50 f includes protection IC 70 fa and protection IC 70 fb.
  • battery protection system 100 f may include protection IC 70 fa and protection IC 70 fb outside battery protection circuit 50 f.
  • FIG. 44 is a circuit diagram illustrating one example of the configuration of battery protection system 100 g according to Embodiment 7.
  • battery protection system 100 g includes battery protection circuit 50 g , X (X is an integer greater than or equal to one) battery cells 5 and Y (Y is an integer greater than or equal to two) power management circuits 80 g .
  • Power management circuit 80 g includes an IC including a function of supplying power to the functional circuits of a main device (not illustrated in the drawings) connected to the above components.
  • the functional circuits of the main device are, for example, Bluetooth (registered trademark) circuits, Wi-Fi (registered trademark) circuits, LiDAR circuits, and other functional circuits.
  • Battery protection circuit 50 g includes first semiconductor device 1 ga , second semiconductor device 1 gb , protection IC 70 ga , protection IC 70 gb , X first terminals 71 g , Y second terminals 72 g , third terminal 73 g , and Y fourth terminals 74 g.
  • Protection IC 70 ga controls the charging/discharging of the X battery cells 5 by controlling first semiconductor device 1 ga based on the voltages of the X battery cells 5 .
  • Protection IC 70 gb controls the charging/discharging of the X battery cells 5 by controlling second semiconductor device 1 gb based on the voltages of the X battery cells 5 .
  • First semiconductor device 1 ga is semiconductor device 1 described in detail in Embodiment 1, and includes X+Y vertical MOS transistors. The conducting state and the non-conducting state of each vertical MOS transistor are controlled by protection IC 70 ga.
  • Second semiconductor device 1 gb is semiconductor device 1 described in detail in Embodiment 1, and includes 1+Y vertical MOS transistors. The conducting state and the non-conducting state of each vertical MOS transistor are controlled by protection IC 70 gb.
  • Each X first terminal 71 g is connected to the one or more source pads of a different one of the X vertical MOS transistors among the X+Y vertical MOS transistors included in first semiconductor device 1 ga.
  • Each Y second terminal 72 g is connected to the one or more source pads of a different one of the Y vertical MOS transistors excluding the above-described X vertical MOS transistors among the X+Y vertical MOS transistors included in first semiconductor device 1 ga.
  • Third terminal 73 g is connected to the one or more source pads of one vertical MOS transistor among the 1+Y vertical MOS transistors included in second semiconductor device 1 gb.
  • Each Y fourth terminal 74 g is connected to the one or more source pads of a different one of the Y vertical MOS transistors excluding the above-described one vertical MOS transistor among the 1+Y vertical MOS transistors included in second semiconductor device 1 gb.
  • Each positive electrode of the X battery cells 5 is connected to a different one of the X first terminals 71 g , and the negative electrodes of the X battery cells 5 are connected to third terminal 73 g.
  • the Y power management circuits 80 g are respectively connected to the Y second terminals 72 g and the Y fourth terminals 74 g . Through one of the Y second terminals 72 g and one of the Y fourth terminals 74 g , the Y power management circuits 80 g apply charging current to at least one of the X battery cells 5 via battery protection circuit 50 g when charging, and receive discharging current from at least one of the X battery cells 5 via battery protection circuit 50 g when discharging.
  • Battery protection system 100 g configured as described above can achieve the charging/discharging of the X battery cells 5 utilizing the Y power management circuits 80 g.
  • the charging current supplied by one power management circuit 80 g is 6 A
  • a current of (6 A ⁇ Y) A will flow through the vertical MOS transistor connected to third terminal 73 g among the 1+Y vertical MOS transistors included in semiconductor device 1 gb
  • battery protection system 100 g configured as described above stops charging or discharging said battery cell 5 by controlling first semiconductor device 1 ga or second semiconductor device 1 gb.
  • battery protection system 100 g is described as including protection IC 70 ga and protection IC 70 gb in battery protection circuit 50 g , but battery protection system 100 g is not necessarily limited to a configuration in which battery protection circuit 50 g includes protection IC 70 ga and protection IC 70 gb.
  • battery protection system 100 g may include protection IC 70 ga and protection IC 70 gb outside battery protection circuit 50 g.
  • FIG. 45 is a circuit diagram illustrating one example of the configuration of power management system 200 according to Embodiment 8.
  • power management system 200 includes power management circuit 51 and X (X is an integer greater than or equal to one) external circuits 8 (corresponding to external circuits 8 a through 8 d in FIG. 45 ).
  • Power management circuit 51 includes first semiconductor device 1 h , Y (Y is an integer greater than or equal to two) circuits 6 (corresponding to circuits 6 a through 6 d in FIG. 45 ), controller 7 , and X terminals 71 h.
  • Controller 7 controls the connection states of the X external circuits 8 and the Y circuits 6 by controlling first semiconductor device 1 h.
  • First semiconductor device 1 h is semiconductor device 1 described in detail in Embodiment 1, and includes X+Y vertical MOS transistors. The conducting state and the non-conducting state of each vertical MOS transistor are controlled by controller 7 .
  • Each of the X terminals 71 h is connected to the one or more source pads of a different one of the X vertical MOS transistors among the X+Y vertical MOS transistors included in first semiconductor device 1 h.
  • Each of the Y circuits 6 is connected to the one or more source pads of a different one of the Y vertical MOS transistors excluding the above-described X vertical MOS transistors among the X+Y vertical MOS transistors included in first semiconductor device 1 h .
  • the one or more source pads of the Y vertical MOS transistors among the X+Y vertical MOS transistors included in first semiconductor device 1 h are connected to the respective power supply terminals of the Y circuits 6 .
  • the Y circuits 6 are connected to functional circuits of the main device, such as Bluetooth (registered trademark) circuits, Wi-Fi (registered trademark) circuits, and LiDAR circuits, and to a voltage conversion circuit that converts supplied power into voltage that can recharge a battery cell or a battery cell with a protection function circuit in the main device. Circuits 6 have separate power supplies and are connected together via semiconductor device 1 .
  • the X external circuits 8 are respectively connected to the X terminals 71 h .
  • the X external circuits 8 are power-supply source circuits or power-supply destination circuits, and the X terminals 71 h are connected to the power supply terminals of the respective X external circuits 8 .
  • Examples of the X external circuits 8 as power-supply source circuits include AC adapters, USB 5 V circuits, wireless chargers and the like, and examples of the X external circuits 8 as power-supply destination circuits include external devices and the like.
  • Power management system 200 configured as described above can supply power from a power-supply source circuit among the X external circuits 8 to any of the Y circuits 6 , and can supply power from any of the Y circuits 6 to a power-supply destination circuit among the X external circuits 8 .
  • external circuit 8 supplies charging current to a battery cell at a chargeable voltage
  • the charging current is supplied directly to circuit 6 that includes a battery cell with a battery protection function via semiconductor device 1 h , thereby achieving highly efficient charging without the power loss that occurs when passing through the voltage conversion circuit.
  • a charging current is to be supplied by external circuit 8 to a battery cell at a non-chargeable voltage, said voltage is not charged directly to circuit 6 that includes a battery cell with a battery protection function, but supplied to circuit 6 including a function for converting voltage via semiconductor device 1 h , and converted to a voltage that can be supplied to the battery cell. After doing so, the charging current is supplied to circuit 6 that includes a battery cell with a battery protection function at a voltage that can be supplied to the battery cell.
  • power management system 200 is described as including controller 7 in power management circuit 51 , but power management system 200 is not necessarily limited to a configuration in which power management circuit 51 includes controller 7 .
  • power management system 200 may include controller 7 outside power management circuit 51 .
  • FIG. 46 is a circuit diagram illustrating one example of the configuration of power management system 200 a according to Embodiment 9.
  • power management system 200 a includes power management circuit 51 a and power supply circuit 8 e.
  • Power management circuit 51 a includes first semiconductor device 1 i , Y (Y is an integer greater than or equal to two) circuits 6 a (corresponding to circuits 6 aa through 6 ad in FIG. 46 ), controller 7 a , DC/DC circuit 90 , and terminal 71 i.
  • DC/DC circuit 90 converts the output voltage of power supply circuit 8 e to a voltage used by the Y circuits 6 a.
  • Controller 7 a controls the connection states of DC/DC circuit 90 and the Y circuits 6 by controlling first semiconductor device 1 i.
  • First semiconductor device 1 i is semiconductor device 1 described in detail in Embodiment 1, and includes 1+Y vertical MOS transistors. The conducting state and the non-conducting state of each vertical MOS transistor are controlled by controller 7 a.
  • Terminal 71 i is connected to one terminal (the voltage input terminal) of DC/DC circuit 90 .
  • the other terminal (the voltage output terminal) of DC/DC circuit 90 is connected to each of the one or more source pads of one vertical MOS transistor among the 1+Y vertical MOS transistors included in first semiconductor device 1 i.
  • Each of the Y circuits 6 a is connected to the one or more source pads of a different one of the Y vertical MOS transistors excluding the above-described one vertical MOS transistor among the 1+Y vertical MOS transistors included in first semiconductor device 1 i .
  • the one or more source pads of the Y vertical MOS transistors among the 1+Y vertical MOS transistors included in first semiconductor device 1 i are connected to the respective power supply terminals of the Y circuits 6 a.
  • the Y circuits 6 a are circuits having separate power supplies from other circuits such as Bluetooth (registered trademark) circuits, Wi-Fi (registered trademark) circuits, LiDAR circuits, etc.
  • Power supply circuit 8 e is connected to terminal 71 i and outputs voltage to terminal 71 i.
  • Power management system 200 a configured as described above can supply the voltage converted by DC/DC circuit 90 only to those Y circuits 6 a that need to be supplied with voltage.
  • the present disclosure is widely applicable to, for example, semiconductor devices, battery protection circuits, and power management circuits.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Emergency Protection Circuit Devices (AREA)
US18/181,332 2021-03-29 2023-03-09 Semiconductor device, battery protection circuit, and power management circuit Abandoned US20230215940A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US18/181,332 US20230215940A1 (en) 2021-03-29 2023-03-09 Semiconductor device, battery protection circuit, and power management circuit
US18/330,053 US11894456B2 (en) 2021-03-29 2023-06-06 Semiconductor device, battery protection circuit, and power management circuit

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163167328P 2021-03-29 2021-03-29
PCT/JP2022/014447 WO2022210367A1 (ja) 2021-03-29 2022-03-25 半導体装置、電池保護回路、および、パワーマネージメント回路
US18/181,332 US20230215940A1 (en) 2021-03-29 2023-03-09 Semiconductor device, battery protection circuit, and power management circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/014447 Continuation WO2022210367A1 (ja) 2021-03-29 2022-03-25 半導体装置、電池保護回路、および、パワーマネージメント回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/330,053 Continuation US11894456B2 (en) 2021-03-29 2023-06-06 Semiconductor device, battery protection circuit, and power management circuit

Publications (1)

Publication Number Publication Date
US20230215940A1 true US20230215940A1 (en) 2023-07-06

Family

ID=83459061

Family Applications (2)

Application Number Title Priority Date Filing Date
US18/181,332 Abandoned US20230215940A1 (en) 2021-03-29 2023-03-09 Semiconductor device, battery protection circuit, and power management circuit
US18/330,053 Active US11894456B2 (en) 2021-03-29 2023-06-06 Semiconductor device, battery protection circuit, and power management circuit

Family Applications After (1)

Application Number Title Priority Date Filing Date
US18/330,053 Active US11894456B2 (en) 2021-03-29 2023-06-06 Semiconductor device, battery protection circuit, and power management circuit

Country Status (6)

Country Link
US (2) US20230215940A1 (zh)
JP (2) JP7253674B2 (zh)
KR (2) KR102606591B1 (zh)
CN (2) CN116250076A (zh)
TW (2) TWI820648B (zh)
WO (1) WO2022210367A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230317841A1 (en) * 2021-03-29 2023-10-05 Nuvoton Technology Corporation Japan Semiconductor device, battery protection circuit, and power management circuit

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114279B2 (ja) 1988-01-06 1995-12-06 株式会社東芝 半導体装置
DE69433808T2 (de) * 1993-11-30 2005-06-09 Siliconix Inc., Santa Clara Vielfach-Spannungsversorgung und Verfahren zur Auswahl einer Spannungsquelle aus einer Vielzahl von Spannungsquellen
JP2001274172A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 横型バイポーラトランジスタおよびその製造方法
DE10260769A1 (de) * 2002-12-23 2004-07-15 Infineon Technologies Ag DRAM-Speicher mit vertikal angeordneten Auswahltransistoren
CN100492697C (zh) * 2003-08-22 2009-05-27 松下电器产业株式会社 纵型有机fet及其制造方法
US7884454B2 (en) * 2005-01-05 2011-02-08 Alpha & Omega Semiconductor, Ltd Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
JP2006324320A (ja) * 2005-05-17 2006-11-30 Renesas Technology Corp 半導体装置
JP5113331B2 (ja) * 2005-12-16 2013-01-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2007201338A (ja) 2006-01-30 2007-08-09 Sanyo Electric Co Ltd 半導体装置
JP5157164B2 (ja) * 2006-05-29 2013-03-06 富士電機株式会社 半導体装置、バッテリー保護回路およびバッテリーパック
US7700417B2 (en) * 2007-03-15 2010-04-20 Freescale Semiconductor, Inc. Methods for forming cascode current mirrors
JP4577425B2 (ja) * 2007-11-07 2010-11-10 株式会社デンソー 半導体装置
US8461669B2 (en) * 2010-09-20 2013-06-11 Monolithic Power Systems, Inc. Integrated power converter package with die stacking
JP2012175067A (ja) * 2011-02-24 2012-09-10 Sony Corp 撮像素子、製造方法、および電子機器
JP5990401B2 (ja) * 2012-05-29 2016-09-14 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US9324625B2 (en) * 2012-05-31 2016-04-26 Infineon Technologies Ag Gated diode, battery charging assembly and generator assembly
JP6190204B2 (ja) * 2012-09-25 2017-08-30 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP6063713B2 (ja) * 2012-11-08 2017-01-18 ルネサスエレクトロニクス株式会社 電池保護システム
JP6348703B2 (ja) * 2013-11-12 2018-06-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
EP4141953A1 (en) * 2013-11-28 2023-03-01 Rohm Co., Ltd. Semiconductor device
DE102014106825B4 (de) * 2014-05-14 2019-06-27 Infineon Technologies Ag Halbleitervorrichtung
US10164447B2 (en) * 2015-02-26 2018-12-25 Renesas Electronics Corporation Semiconductor chip, semiconductor device and battery pack
WO2017094185A1 (ja) * 2015-12-04 2017-06-08 ルネサスエレクトロニクス株式会社 半導体チップおよび半導体装置並びに電子装置
JP6795888B2 (ja) * 2016-01-06 2020-12-02 力智電子股▲フン▼有限公司ｕＰＩ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏｒｐ． 半導体装置及びそれを用いた携帯機器
JP6577916B2 (ja) * 2016-07-11 2019-09-18 ミツミ電機株式会社 保護ｉｃ
CN110114888B (zh) * 2016-12-27 2022-06-21 新唐科技日本株式会社 半导体装置
KR102331070B1 (ko) * 2017-02-03 2021-11-25 삼성에스디아이 주식회사 배터리 팩 및 배터리 팩의 충전 제어 방법
US11227925B2 (en) * 2017-04-14 2022-01-18 Ptek Technology Co., Ltd. Semiconductor device and charging system using the same
CN111164822A (zh) * 2017-07-25 2020-05-15 株式会社半导体能源研究所 蓄电系统、电子设备及车辆以及推测方法
JP6447946B1 (ja) * 2018-01-19 2019-01-09 パナソニックＩｐマネジメント株式会社 半導体装置および半導体モジュール
CN112470290B (zh) * 2018-06-19 2021-11-30 新唐科技日本株式会社 半导体装置
CN111684582B (zh) * 2018-06-19 2022-05-10 新唐科技日本株式会社 半导体装置
CN112368845A (zh) * 2018-06-19 2021-02-12 新唐科技日本株式会社 半导体装置
JP7101085B2 (ja) * 2018-08-30 2022-07-14 株式会社東芝 半導体装置及び半導体装置の製造方法
WO2020129786A1 (ja) * 2018-12-19 2020-06-25 パナソニックセミコンダクターソリューションズ株式会社 半導体装置
US12034322B2 (en) * 2019-01-24 2024-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method of semiconductor device
WO2020174299A1 (ja) * 2019-02-25 2020-09-03 株式会社半導体エネルギー研究所 二次電池の保護回路及び二次電池の異常検知システム
EP3836201A1 (en) * 2019-12-11 2021-06-16 Infineon Technologies Austria AG Semiconductor switch element and method of manufacturing the same
JPWO2021165780A1 (zh) * 2020-02-21 2021-08-26
TWI820648B (zh) * 2021-03-29 2023-11-01 日商新唐科技日本股份有限公司 半導體裝置、電池保護電路及電源管理電路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230317841A1 (en) * 2021-03-29 2023-10-05 Nuvoton Technology Corporation Japan Semiconductor device, battery protection circuit, and power management circuit
US11894456B2 (en) * 2021-03-29 2024-02-06 Nuvoton Technology Corporation Japan Semiconductor device, battery protection circuit, and power management circuit

Also Published As

Publication number Publication date
TW202303924A (zh) 2023-01-16
CN116646351A (zh) 2023-08-25
TW202410386A (zh) 2024-03-01
JP7340713B2 (ja) 2023-09-07
KR102550988B1 (ko) 2023-07-04
TWI844493B (zh) 2024-06-01
JP7253674B2 (ja) 2023-04-06
CN116250076A (zh) 2023-06-09
CN116646351B (zh) 2024-02-09
US20230317841A1 (en) 2023-10-05
WO2022210367A1 (ja) 2022-10-06
KR20230084602A (ko) 2023-06-13
TWI820648B (zh) 2023-11-01
US11894456B2 (en) 2024-02-06
KR20230044021A (ko) 2023-03-31
KR102606591B1 (ko) 2023-11-29
JP2023084132A (ja) 2023-06-16
JPWO2022210367A1 (zh) 2022-10-06

Similar Documents

Publication Publication Date Title
US11437354B2 (en) Semiconductor device
US10170919B2 (en) Battery protecting apparatus
US11894456B2 (en) Semiconductor device, battery protection circuit, and power management circuit
US20140070319A1 (en) Semiconductor device and method of manufacturing the same
US10256212B2 (en) Semiconductor chip having multiple pads and semiconductor module including the same
CN108028234B (zh) 半导体芯片、半导体器件以及电子器件
US10541624B2 (en) Three-level I-type inverter and semiconductor module
US11282834B2 (en) Semiconductor device
US12113533B2 (en) Semiconductor device
US12021516B2 (en) Semiconductor device
EP3139406A1 (en) Semiconductor device and semiconductor module
US11049856B2 (en) Semiconductor device
JP7166387B2 (ja) 半導体装置及び制御システム
EP4050648A1 (en) Semiconductor device, rectifying element using same, and alternator
US11538802B2 (en) Semiconductor device including a switching element in a first element region and a diode element in a second element region
US7034344B2 (en) Integrated semiconductor power device for multiple battery systems
US20170264194A1 (en) Step-down chopper circuit
JP7475569B1 (ja) 半導体装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: NUVOTON TECHNOLOGY CORPORATION JAPAN, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAMOTO, KOUKI;TAKATA, HARUHISA;REEL/FRAME:062936/0798

Effective date: 20230228

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION