JP7166387B2 - 半導体装置及び制御システム - Google Patents
半導体装置及び制御システム Download PDFInfo
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- JP7166387B2 JP7166387B2 JP2021075723A JP2021075723A JP7166387B2 JP 7166387 B2 JP7166387 B2 JP 7166387B2 JP 2021075723 A JP2021075723 A JP 2021075723A JP 2021075723 A JP2021075723 A JP 2021075723A JP 7166387 B2 JP7166387 B2 JP 7166387B2
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- 239000004065 semiconductor Substances 0.000 title claims description 157
- 239000004020 conductor Substances 0.000 claims description 37
- 230000003071 parasitic effect Effects 0.000 description 11
- 238000007599 discharging Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 239000007769 metal material Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、本実施形態に係る半導体装置を示す平面図である。
図2は、図1のA1-A2線の断面図である。
なお、本明細書においては、XYZ直交座標系を採用する。ドレイン電極80から半導体層10に向かう方向をZ方向とし、Z方向に対して垂直な方向であって相互に直交する2方向をX方向及びY方向とする。
図1に示す例では、半導体装置1は2つのスイッチング素子1A、1Bによって構成されているが、3つ以上のスイッチング素子によって構成されても良い。例えば、スイッチング素子1A及びスイッチング素子1B内には同じ要素が設けられている。
以下、スイッチング素子1A、1B内の要素について説明する。
半導体層30は、半導体層20上に設けられている。例えば、半導体層30は、シリコンを含み、その導電形はp形である。例えば、半導体層30は、ベース領域である。
例えば、ゲート電極50の周囲には、ゲート絶縁膜等の絶縁膜(図示せず)が設けられている。ゲート絶縁膜を介して、ゲート電極50が半導体層20、30、40上に配置される。
絶縁層60は、半導体層20、25、30上に設けられている。例えば、絶縁層60は、シリコン酸化物を含む。
本実施形態の半導体装置1では、MOSFETがX方向に配置され、各MOSFETは、X方向及びY方向に沿って配置された複数のMOSトランジスタを有している。
図1及び図2に示すように、半導体装置1には、導電体90がさらに設けられている。
導電体90は、半導体層10上に設けられている。導電体90は、X方向において、スイッチング素子1A及びスイッチング素子1Bの間に位置し、Y方向に延びている。
また、導電体90によって、半導体層10及び半導体層20の両方がX方向において分断されていても良い。この場合、導電体90はドレイン電極80上に位置し、導電体90のX方向両側には、半導体層10、20が位置する。
図3は、本実施形態に係る半導体装置の接続形態を示す回路図である。図3において、半導体装置の接続形態の一例として、二次電池の保護回路が示されている。
図3に示すように、保護回路4は、半導体装置1及び制御回路2を有し、二次電池3と直列に接続されている。半導体装置1は、MOSFETであるスイッチング素子1A、1Bを有する。スイッチング素子1A及びスイッチング素子1Bは、寄生ダイオードをそれぞれ有し、互いに接続されている。
二次電池3、負荷7A及びコンデンサ8が端子3a、3b、3c、3dを介して直列に接続されることで回路9が構成されている。
制御回路2は、入力端子2cを介して二次電池3の電圧を検出して通常状態である場合、スイッチング素子1A及びスイッチング素子1Bをオンに切り替える。制御回路2は、二次電池3の充電動作の場合、スイッチング素子1A及びスイッチング素子1Bをオンに切り替えて、二次電池3の充電方向である矢印a1の方向に電流が流れる。この場合、スイッチング素子1Aからスイッチング素子1Bに電流が流れる。
通常状態では、二次電池3の電圧が所定の電圧値の範囲内であるので、スイッチング素子1A及びスイッチング素子1Bの両方をオンにする。
まず、入力端子2cを介した制御回路2の保護動作について説明する。
制御回路2は、入力端子2cを介して二次電池3の電圧を検出して過充電状態である場合、制御端子2bをオフにする(例えば、スイッチング素子1Bをオフにする信号を出力する)ので、スイッチング素子1Bがオフになってスイッチング素子1Aからスイッチング素子1Bに電流が流れない。つまり、スイッチング素子1Bを介しては電流は流れず、半導体装置1に流れる電流としては、スイッチング素子1Aの抵抗と寄生ダイオード(逆方向)に依存する。また、過充電状態から放電する場合、寄生ダイオードが順方向となるために放電することができる。
過充電状態では、二次電池3の電圧が所定の電圧値より大きいので、スイッチング素子1A及びスイッチング素子1Bをそれぞれオン及びオフにする。これにより、充電は停止され、スイッチング素子1Bの寄生ダイオードとオン状態のスイッチング素子1Aを介して二次電池3の放電による矢印a2の方向に電流が流れる。
過放電状態では、二次電池3の電圧が所定の電圧値より小さいので、スイッチング素子1A及びスイッチング素子1Bをそれぞれオフ及びオンにする。これにより、放電は停止され、スイッチング素子1Aの寄生ダイオードとオン状態のスイッチング素子1Bを介して二次電池3の充電による矢印a1の方向に電流が流れる。
制御回路2は、入力端子2eを介して、入力端子2d及び負極端子6b間の電位から充電時の過電流を検出した場合、制御端子2bをオフにするので、スイッチング素子1Bがオフになってスイッチング素子1Aからスイッチング素子1Bに電流が流れない。つまり、半導体装置1に流れる電流としては、スイッチング素子1Aの抵抗と寄生ダイオード(逆方向)に依存する。また、充電時の過電流を検出した状態から放電する場合、寄生ダイオードが順方向となるために放電することができる。
充電時の過電流を検出した場合、入力端子2d及び負極端子6b間の電位(電圧)が所定の電圧以下であるので、スイッチング素子1A及びスイッチング素子1Bをそれぞれオン及びオフにする。
放電時の過電流を検出した場合、入力端子2d及び負極端子6b間の電位(電圧)が所定の電圧以上であるので、スイッチング素子1A及びスイッチング素子1Bをそれぞれオフ及びオンにする。
図4は、実施形態に係る半導体装置の電流経路を示す断面図である。
図4に示された領域は、図2に示された領域に相当する。
本実施形態では、半導体装置1は、半導体層10及び半導体層20内に設けられ、X方向においてスイッチング素子1A及びスイッチング素子1Bの間に位置する導電体90を有する。このような導電体90を設けると、スイッチング素子1A及びスイッチング素子1Bの間の抵抗値を下げて、半導体装置1内に電流が流れ易くなる。これにより、半導体装置1の電気特性が向上する。
本実施形態によれば、電気特性が向上した半導体装置及び制御システムを提供することができる。
Claims (5)
- 第1導電形の第1半導体層と、
前記第1半導体層上に設けられる前記第1導電形の第2半導体層と、
前記第2半導体層上に設けられ、第1制御電極を含む第1素子部と、
前記第1素子部上に設けられた第1電極と、
を有する第1スイッチング素子と、
前記第2半導体層上に設けられ、第2制御電極を含む第2素子部と、
前記第2素子部上に設けられた第2電極と、
を有し、前記第2半導体層上において、前記第1スイッチング素子と第1方向に並べて配置された第2スイッチング素子と、
前記第1半導体層の前記第2半導体層とは反対側の裏面上に設けられた裏面側電極であって、前記第1半導体層は、前記第2半導体層と前記裏面側電極との間に位置する、裏面側電極と、
前記第1スイッチング素子及び前記第2スイッチング素子の間に設けられ、前記第2半導体層の表面から前記裏面側電極に至る深さに延在する導電体と、
を備えた半導体装置。 - 前記導電体の底面は、前記裏面側電極上に位置し、
前記導電体の前記第1方向の側面上には、前記第1半導体層及び前記第2半導体層が位置する請求項1記載の半導体装置。 - 前記導電体は、前記第1半導体層と前記第2半導体層との境界に平行であって、前記第1方向に交差する第2方向に延在する請求項1または2に記載の半導体装置。
- 前記第1スイッチング素子は、前記第2半導体層と前記第1電極との間に設けられる第2導電形の第3半導体層を含み、
前記第2スイッチング素子は、前記第2半導体層と前記第2電極との間に設けられる第2導電形の第4半導体層を含む、請求項1から3のいずれか1つに記載の半導体装置。 - 請求項1から4のいずれか1つに記載の半導体装置と、
前記第1スイッチング素子の前記第1電極と一端で接続され、前記第2スイッチング素子の前記第2電極と他端で接続される電源部と、
前記第1素子部の前記第1制御電極と、前記第2素子部の前記第2制御電極とに接続され、過電流を検出する回路部と、
を備えた制御システム。
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