JP5113331B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5113331B2 JP5113331B2 JP2005363815A JP2005363815A JP5113331B2 JP 5113331 B2 JP5113331 B2 JP 5113331B2 JP 2005363815 A JP2005363815 A JP 2005363815A JP 2005363815 A JP2005363815 A JP 2005363815A JP 5113331 B2 JP5113331 B2 JP 5113331B2
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- 239000004065 semiconductor Substances 0.000 title claims description 115
- 239000000758 substrate Substances 0.000 claims description 53
- 238000001514 detection method Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 32
- 239000010410 layer Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 26
- 239000012535 impurity Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000000206 photolithography Methods 0.000 description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 238000012216 screening Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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Description
1A P++型単結晶シリコン基板
1B P+型単結晶シリコン層
2 N型ウエル
3 素子分離部
4 溝
5 酸化シリコン膜
6 ゲート電極
6M 配線層
7 酸化シリコン膜
8 酸化シリコン膜
9 多結晶シリコン膜
10 ゲート電極
11 ゲート絶縁膜
12 P−型半導体領域(第1半導体領域)
13 N型半導体領域
14 P+型半導体領域(第2半導体領域)
15 P+型半導体領域
16 絶縁膜
17 絶縁膜
18 コンタクト溝
19 N+型半導体領域
20 コンタクト溝
21 配線層
Ac 保護回路領域(オフセットPMOS領域)
At トレンチPMOS領域
Cd コンタクト
Cg コンタクト
Cs コンタクト
D ドレイン配線
G ゲート配線
GP ゲートパッド(ゲート電極)
S ソース配線
SP ソースパッド(ソース電極)
Claims (3)
- 半導体基板と、
前記半導体基板の主面に形成されたPチャネルのトレンチゲート型MOSFETと、
前記半導体基板の主面に形成されたPチャネルのプレーナゲート型MOSFETを備えた半導体装置であって、
前記Pチャネルのトレンチゲート型MOSFETのゲート電極の導電型がP型であり、
前記Pチャネルのプレーナゲート型MOSFETのゲート電極の導電型がN型であり、
前記Pチャネルのプレーナゲート型MOSFETは、前記Pチャネルのトレンチゲート型MOSFETを保護する保護回路を構成するのに用いられ、
前記Pチャネルのトレンチゲート型MOSFETはパワーMOSFETであり、
前記保護回路が温度検知過熱遮断回路であることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記半導体装置は、自動車に利用され、
前記Pチャネルのトレンチゲート型MOSFETのソース電極は、前記自動車のバッテリに結合され、
前記Pチャネルのトレンチゲート型MOSFETのドレイン電極は、前記自動車の負荷回路に接続され、
前記負荷回路は、前記自動車の接地端子に結合されることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記Pチャネルのプレーナゲート型MOSFETがオフセットドレイン構造を有していることを特徴とする半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005363815A JP5113331B2 (ja) | 2005-12-16 | 2005-12-16 | 半導体装置 |
US11/610,704 US20070138566A1 (en) | 2005-12-16 | 2006-12-14 | Semiconductor device and manufacturing method of the same |
US12/851,101 US8441065B2 (en) | 2005-12-16 | 2010-08-05 | Semiconductor device and manufacturing method of the same |
US13/764,345 US20130149825A1 (en) | 2005-12-16 | 2013-02-11 | Semiconductor device and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005363815A JP5113331B2 (ja) | 2005-12-16 | 2005-12-16 | 半導体装置 |
Related Child Applications (1)
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US7781832B2 (en) * | 2008-05-28 | 2010-08-24 | Ptek Technology Co., Ltd. | Trench-type power MOS transistor and integrated circuit utilizing the same |
JP6008377B2 (ja) * | 2010-03-03 | 2016-10-19 | ルネサスエレクトロニクス株式会社 | Pチャネル型パワーmosfet |
CN102157414B (zh) * | 2011-01-27 | 2016-03-30 | 上海华虹宏力半导体制造有限公司 | 沟槽式mos器件的工艺监控方法及装置 |
CN103548132B (zh) | 2011-06-30 | 2016-10-26 | 富士电机株式会社 | 半导体器件的制造方法 |
US20140110777A1 (en) * | 2012-10-18 | 2014-04-24 | United Microelectronics Corp. | Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof |
US9443958B2 (en) * | 2014-10-06 | 2016-09-13 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device and method of forming the same |
JP2015222817A (ja) * | 2015-06-30 | 2015-12-10 | ルネサスエレクトロニクス株式会社 | Pチャネル型パワーmosfetの製造方法 |
CN112768356B (zh) * | 2019-11-05 | 2024-01-23 | 珠海格力电器股份有限公司 | 一种沟槽栅igbt制作方法 |
JP7253674B2 (ja) * | 2021-03-29 | 2023-04-06 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置、電池保護回路、および、パワーマネージメント回路 |
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JP2522208B2 (ja) | 1987-03-19 | 1996-08-07 | 日本電装株式会社 | 半導体装置 |
JPH04280467A (ja) * | 1991-03-08 | 1992-10-06 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US5539610A (en) * | 1993-05-26 | 1996-07-23 | Siliconix Incorporated | Floating drive technique for reverse battery protection |
US5903034A (en) * | 1995-09-11 | 1999-05-11 | Hitachi, Ltd. | Semiconductor circuit device having an insulated gate type transistor |
JP3414569B2 (ja) | 1995-12-08 | 2003-06-09 | エヌオーケー株式会社 | 流体圧アクチュエータ |
JP3431467B2 (ja) * | 1997-09-17 | 2003-07-28 | 株式会社東芝 | 高耐圧半導体装置 |
CN1166002C (zh) * | 1998-04-23 | 2004-09-08 | 国际整流器有限公司 | P沟道槽型金属氧化物半导体场效应晶体管结构 |
JP3413569B2 (ja) * | 1998-09-16 | 2003-06-03 | 株式会社日立製作所 | 絶縁ゲート型半導体装置およびその製造方法 |
JP3684866B2 (ja) * | 1998-10-16 | 2005-08-17 | 株式会社日立製作所 | 導通,遮断制御装置 |
JP4807894B2 (ja) * | 1999-05-31 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4236848B2 (ja) * | 2001-03-28 | 2009-03-11 | セイコーインスツル株式会社 | 半導体集積回路装置の製造方法 |
JP4570806B2 (ja) * | 2001-04-11 | 2010-10-27 | セイコーインスツル株式会社 | 半導体集積回路装置の製造方法 |
JP4811895B2 (ja) * | 2001-05-02 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2005019548A (ja) * | 2003-06-24 | 2005-01-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4807768B2 (ja) * | 2004-06-23 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | パワートランジスタ装置及びそれを用いたパワー制御システム |
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JP2007165797A (ja) | 2007-06-28 |
US20070138566A1 (en) | 2007-06-21 |
US20130149825A1 (en) | 2013-06-13 |
US8441065B2 (en) | 2013-05-14 |
US20100315751A1 (en) | 2010-12-16 |
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