US20170062254A1 - Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium - Google Patents

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium Download PDF

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Publication number
US20170062254A1
US20170062254A1 US14/861,658 US201514861658A US2017062254A1 US 20170062254 A1 US20170062254 A1 US 20170062254A1 US 201514861658 A US201514861658 A US 201514861658A US 2017062254 A1 US2017062254 A1 US 2017062254A1
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Prior art keywords
chamber
substrate
gas
process chamber
gas supply
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US14/861,658
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English (en)
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Yukitomo Hirochi
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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Assigned to HITACHI KOKUSAI ELECTRIC INC. reassignment HITACHI KOKUSAI ELECTRIC INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIROCHI, YUKITOMO
Priority to US15/401,529 priority Critical patent/US10131990B2/en
Publication of US20170062254A1 publication Critical patent/US20170062254A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

Definitions

  • the present invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device and a non-transitory computer-readable recording medium.
  • the present invention provides a technique capable of improving the productivity of a processing apparatus including a plurality of process chambers.
  • a technique including: a plurality of process chambers where substrates are processed; a process gas supply unit configured to supply a process gas into each of the plurality of process chambers; a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers; an exhaust unit configured to exhaust each of the plurality of process chambers; and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.
  • FIG. 1 is a cross-sectional schematic view of a substrate processing system according to an embodiment of the present invention.
  • FIG. 2 is a vertical cross-sectional schematic view of the substrate processing system according to an embodiment of the present invention.
  • FIG. 3 is a schematic view of a vacuum transfer robot of the substrate processing system according to an embodiment of the present invention.
  • FIG. 4 is a configuration diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 5 is a vertical cross-sectional schematic view of a chamber according to an embodiment of the present invention.
  • FIG. 6 is a configuration diagram schematically illustrating a controller of the substrate processing system according to an embodiment of the present invention.
  • FIG. 7 is a flowchart for describing a first substrate processing process according to an embodiment of the present invention.
  • FIG. 8 is a sequence diagram for describing the first substrate processing process according to an embodiment of the present invention.
  • FIG. 9 is a flowchart for describing a second substrate processing process according to an embodiment of the present invention.
  • FIG. 10 is a sequence diagram for describing the second substrate processing process according to an embodiment of the present invention.
  • FIG. 11 is a flowchart for describing a substrate processing process performed by the substrate processing system according to an embodiment of the present invention.
  • FIG. 12 is a configuration diagram schematically illustrating a substrate processing apparatus according to another embodiment of the present invention.
  • FIG. 1 is a cross-sectional view illustrating the configuration of the substrate processing system according to the present embodiment.
  • FIG. 2 is a vertical cross-sectional view taken along line ⁇ - ⁇ ′ of FIG. 1 that illustrates the configuration of the substrate processing system according to the present embodiment.
  • FIG. 3 is an explanatory diagram for describing in detail an arm of FIG. 1 .
  • FIG. 4 is a vertical cross-sectional view taken along line ⁇ - ⁇ ′ of FIG. 1 and an explanatory diagram for describing a gas supply system that supplies a gas to a process module.
  • FIG. 5 is an explanatory diagram for describing a chamber provided in the process module.
  • a substrate processing system 1000 to which the present invention is applied performs processing on wafers 200 and mainly includes an IO stage 1100 , an atmosphere transfer chamber 1200 , a load lock chamber 1300 , a vacuum transfer chamber 1400 and process modules 110 .
  • a direction of X 1 is defined as the right, a direction of X 2 as the left, a direction of Y 1 as the front and a direction of Y 2 as the rear in FIG. 1 .
  • a semiconductor device is formed on a surface of the wafer 200 and one process of manufacturing the semiconductor device is performed in the substrate processing system 1000 .
  • the semiconductor device includes at least one of integrated circuits (ICs) and electronic elements (resistance elements, coil elements, capacitor elements and semiconductor devices).
  • the semiconductor device may include a dummy film required during the manufacture of the semiconductor device.
  • the IO stage 1100 (load port) is provided in front of the substrate processing system 1000 .
  • a plurality of pods 1001 are mounted on the IO stage 1100 .
  • the pod 1001 is used as a carrier that transfers the substrate 200 such as a silicon (Si) substrate or the like and is configured to store a plurality of unprocessed substrates 200 or processed substrates 200 in a horizontal posture.
  • Caps 1120 are provided in the pods 1001 and are opened and closed by pod openers 1210 to be described.
  • the pod opener 1210 opens or closes the cap 1120 of the pod 1001 placed on the IO stage 1100 and opens or closes a substrate loading and unloading port, the substrate 200 may be loaded or unloaded into or from the pod 1001 .
  • the pod 1001 is supplied or discharged to or from the IO stage 1100 by an in-process transfer device (such as RGV) (not illustrated).
  • the IO stage 1100 is adjacent to the atmosphere transfer chamber 1200 .
  • the load lock chamber 1300 to be described is connected to a surface of the atmosphere transfer chamber 1200 , which is opposite to the IO stage 1100 .
  • An atmosphere transfer robot 1220 serving as a first transfer robot that transfers the substrate 200 is provided in the atmosphere transfer chamber 1200 .
  • the atmosphere transfer robot 1220 is configured to be lifted by an elevator 1230 provided in the atmosphere transfer chamber 1200 and is configured to laterally reciprocate by a linear actuator 1240 .
  • a clean unit 1250 that supplies clean air is provided on an upper portion of the atmosphere transfer chamber 1200 .
  • a notch or orientation flat aligning device hereinafter, referred to as a pre-aligner 1260 , which is formed on the substrate 200 , is provided at a left side of the atmosphere transfer chamber 1200 .
  • a substrate loading and unloading port 1280 that loads or unloads the substrate 200 into or from the atmosphere transfer chamber 1200 and the pod opener 1210 are provided.
  • the IO stage 1100 load port
  • the substrate loading and unloading port 1280 therebetween.
  • a substrate loading and unloading port 1290 that loads or unloads the wafer 200 into or from the load lock chamber 1300 is provided.
  • the substrate loading and unloading port 1290 is opened or closed by a gate valve 1330 , the wafer 200 may be loaded or unloaded.
  • the load lock chamber 1300 is adjacent to the atmosphere transfer chamber 1200 .
  • the vacuum transfer chamber 1400 is disposed on a surface opposite to the atmosphere transfer chamber 1200 among surfaces of a housing 1310 constituting the load lock chamber 1300 . Since an inner pressure of the housing 1310 is changed according to an inner pressure of the atmosphere transfer chamber 1200 and an inner pressure of the vacuum transfer chamber 1400 , the load lock chamber 1300 is configured to have a structure that can withstand a negative pressure.
  • a substrate loading and unloading port 1340 is provided at a side adjacent to the vacuum transfer chamber 1400 among sides of the housing 1310 .
  • the substrate loading and unloading port 1340 is opened or closed by a gate valve 1350 , the wafer 200 may be loaded or unloaded.
  • a substrate placement unit 1320 including at least two substrate placement surfaces 1311 ( 1311 a and 1311 b ) that place the wafer 200 is provided in the load lock chamber 1300 .
  • a distance between the substrate placement surfaces 1311 is set according to a distance between fingers included in a vacuum transfer robot 1700 to be described below.
  • the substrate processing system 1000 includes the vacuum transfer chamber 1400 (transfer module) serving as a transfer chamber which is a transfer space in which the substrate 200 is transferred under a negative pressure.
  • a housing 1410 constituting the vacuum transfer chamber 1400 is formed to have a pentagonal shape in a plan view, and the load lock chamber 1300 and process modules 110 a through 110 d in which the wafers 200 are processed are connected to each of sides of the pentagon.
  • the vacuum transfer robot 1700 serving as a second transfer robot that transfers the substrate 200 under a negative pressure is provided at a center portion of the vacuum transfer chamber 1400 using a flange 1430 as a base.
  • the vacuum transfer chamber 1400 has a pentagonal shape as an example, it may have a polygonal shape such as a rectangular shape or a hexagonal shape.
  • a substrate loading and unloading port 1420 is provided at a sidewall adjacent to the load lock chamber 1300 among sidewalls of the housing 1410 .
  • the substrate loading and unloading port 1420 is opened or closed by the gate valve 1350 , the wafer 200 may be loaded or unloaded.
  • the vacuum transfer robot 1700 provided in the vacuum transfer chamber 1400 is configured to perform lifting by an elevator 1450 and the flange 1430 while airtightness of the vacuum transfer chamber 1400 is maintained.
  • a configuration of the vacuum transfer robot 1700 will be described in detail below.
  • the elevator 1450 is configured to individually lift two arms 1800 and 1900 included in the vacuum transfer robot 1700 .
  • An inert gas supply hole 1460 that supplies an inert gas into the housing 1410 is provided at a ceiling portion of the housing 1410 .
  • An inert gas supply pipe 1510 is provided in the inert gas supply hole 1460 .
  • an inert gas source 1520 in order from an upstream end, an inert gas source 1520 , a mass flow controller 1530 and a valve 1540 are provided to control an amount of inert gas supplied into the housing 1410 .
  • An inert gas supply unit 1500 in the vacuum transfer chamber 1400 mainly includes the inert gas supply pipe 1510 , the mass flow controller 1530 and the valve 1540 . Also, the inert gas source 1520 and the inert gas supply hole 1460 may be included in the inert gas supply unit 1500 .
  • An exhaust hole 1470 that exhausts the atmosphere of the housing 1410 is provided at a bottom wall of the housing 1410 .
  • An exhaust pipe 1610 is provided in the exhaust hole 1470 .
  • an auto pressure controller (APC) 1620 which is a pressure controller and a pump 1630 are provided.
  • a gas exhaust unit 1600 in the vacuum transfer chamber 1400 mainly includes the exhaust pipe 1610 and the APC 1620 . Also, the pump 1630 and the exhaust hole 1470 may be included in the gas exhaust unit 1600 .
  • the atmosphere of the vacuum transfer chamber 1400 is controlled by the collaboration of the inert gas supply unit 1500 and the gas exhaust unit 1600 .
  • an inner pressure of the housing 1410 is controlled.
  • the process modules 110 a, 110 b, 110 c and 110 d that perform desired processes on the wafers 200 are provided.
  • Chambers 100 are provided in each of the process modules 110 a, 110 b, 110 c and 110 d. Specifically, chambers 100 a and 100 b are provided in the process module 110 a. Chambers 100 c and 100 d are provided in the process module 110 b. Chambers 100 e and 100 f are provided in the process module 110 c. Chambers 100 g and 100 h are provided in the process module 110 d.
  • substrate loading and unloading ports 1480 are provided at the sidewalls facing the chambers 100 .
  • substrate loading and unloading ports 1480 are provided at a sidewall facing the chamber 100 e.
  • a substrate loading and unloading port 1480 a is provided.
  • a substrate loading and unloading port 1480 b is provided at a sidewall facing the chamber 100 b.
  • gate valves 1490 are provided in each of process chambers. Specifically, a gate valve 1490 a is provided between the chamber 100 a and the vacuum transfer chamber 1400 and a gate valve 1490 b is provided between the chamber 100 b and the vacuum transfer chamber 1400 . A gate valve 1490 c is provided between the chamber 100 c and the vacuum transfer chamber 1400 and a gate valve 1490 d is provided between the chamber 100 d and the vacuum transfer chamber 1400 . A gate valve 1490 e is provided between the chamber 100 e and the vacuum transfer chamber 1400 and a gate valve 1490 f is provided between the chamber 100 f and the vacuum transfer chamber 1400 . A gate valve 1490 g is provided between the chamber 100 g and the vacuum transfer chamber 1400 and a gate valve 1490 h is provided between the chamber 100 h and the vacuum transfer chamber 1400 .
  • the wafer 200 may be loaded or unloaded through the substrate loading and unloading port 1480 .
  • FIG. 3 is an enlarged view of the vacuum transfer robot 1700 of FIG. 1 .
  • the vacuum transfer robot 1700 includes two arms including an arm 1800 and an arm 1900 .
  • the arm 1800 includes a fork portion 1830 in which two end effectors including an end effector 1810 and an end effector 1820 are provided at tips thereof.
  • a middle portion 1840 is connected to a center of the fork portion 1830 through a shaft 1850 .
  • the wafers 200 unloaded from each of the process modules 110 are placed on the end effector 1810 and the end effector 1820 .
  • FIG. 2 a case in which the wafer 200 unloaded from the process module 110 c is placed, is illustrated as an example.
  • a bottom portion 1860 is connected to a portion opposite to the fork portion 1830 among portions of the middle portion 1840 through a shaft 1870 .
  • the bottom portion 1860 is disposed on the flange 1430 through a shaft 1880 .
  • the arm 1900 includes a fork portion 1930 in which two end effectors including an end effector 1910 and end effector 1920 are provided at tips thereof.
  • a middle portion 1940 is connected to a center of the fork portion 1930 through a shaft 1950 .
  • the wafers 200 unloaded from the load lock chamber 1300 are placed on the end effector 1910 and the end effector 1920 .
  • a bottom portion 1960 is connected to a portion opposite to the fork portion 1930 among portions of the middle portion 1940 through a shaft 1970 .
  • the bottom portion 1960 is disposed on the flange 1430 through a shaft 1980 .
  • the end effector 1810 and the end effector 1820 are disposed at a higher level than the end effector 1910 and the end effector 1920 .
  • the vacuum transfer robot 1700 may rotate based on the shafts and extend the arms.
  • FIG. 4 is an explanatory diagram for describing the process module 110 a, a gas supply unit connected to the process module 110 a and a gas exhaust unit connected to the process module 110 a.
  • process module 110 a is used as an example, the other process modules including the process module 110 b, the process module 110 c and the process module 110 d have the same structure and thus, descriptions thereof will be omitted herein.
  • the chamber 100 a and the chamber 100 b, in which the wafer 200 is processed, are provided in the process module 110 a.
  • a partition 2040 a is provided between the chamber 100 a and the chamber 100 b and is configured so that the atmospheres in the chambers are not mixed.
  • a substrate loading and unloading port 2060 e is provided at a wall adjacent to the chamber 100 e and the vacuum transfer chamber 1400 .
  • a substrate loading and unloading port 2060 a is provided at a wall adjacent to the chamber 100 a and the vacuum transfer chamber 1400 .
  • a substrate support unit 210 that supports the wafer 200 is provided in each chamber 100 .
  • a gas supply unit that supplies a process gas into each of the chamber 100 a and the chamber 100 b is connected to the process module 110 a.
  • the gas supply unit includes a first gas supply unit (process gas supply unit), a second gas supply unit (reactive gas supply unit), a third gas supply unit (first purge gas supply unit) and a fourth gas supply unit (second purge gas supply unit).
  • first gas supply unit process gas supply unit
  • second gas supply unit reactive gas supply unit
  • third gas supply unit first purge gas supply unit
  • second purge gas supply unit second purge gas supply unit
  • a buffer tank 114 , MFCs 115 a and 115 b and process chamber side valves 116 ( 116 a and 116 b ) are provided between a process gas source 113 and the process module 110 a. Also, these components are connected to each other through a process gas common pipe 112 or process gas supply pipes 111 a and 111 b.
  • the first gas supply unit includes the process gas common pipe 112 , the MFCs 115 a and 115 b, the process chamber side valves 116 ( 116 a and 116 b ) and the first gas supply pipes (process gas supply pipes) 111 a and 111 b.
  • the process gas source 113 may be included in the first gas supply system. Also, according to the number of the process modules provided in the substrate processing system, the same component may be added or removed.
  • the MFC may be a flow control device configured to combine the electrical flow meter and the flow control and a flow control device such as a needle valve or orifice.
  • the MFC to be described blow may be configured in the same manner.
  • the MFC includes the flow control device such as a needle valve or orifice, the gas supply is easily switched at a high speed in a pulsed manner.
  • a remote plasma unit (RPU) 124 serving as an activation unit, MFCs 125 a and 125 b and process chamber side valves 126 ( 126 a and 126 b ) are provided between a reactive gas supply source 123 and the process module 110 a. These components are connected to each other through a reactive gas common pipe 122 or second gas supply pipes (reactive gas supply pipes) 121 a and 121 b.
  • the second gas supply unit includes the RPU 124 , the MFCs 125 a and 125 b, the process chamber side valves 126 ( 126 a and 126 b ), the reactive gas common pipe 122 and the reactive gas supply pipes 121 a and 121 b.
  • the reactive gas supply source 123 may be included in the second gas supply unit. Also, according to the number of the process modules provided in the substrate processing system, the same component may be added or removed.
  • vent lines 171 a and 171 b and vent valves 170 may be provided in front of the process chamber side valves 126 ( 126 a and 126 b ) and may be configured to exhaust a reactive gas.
  • a deactivated reactive gas or a reactive gas having reduced reactivity may be discharged without passing the process chamber.
  • MFCs 135 a and 135 b, process chamber side valves 136 ( 136 a and 136 b ) and valves 176 a, 176 b, 186 a and 186 b are provided between a first purge gas (inert gas) source 133 and the process module 110 a. These components are connected to each other through a purge gas (inert gas) common pipe 132 or purge gas (inert gas) supply pipes 131 a and 131 b.
  • the third gas supply system includes the MFCs 135 a and 135 b, the process chamber side valves 136 ( 136 a and 136 b ), the inert gas common pipe 132 and the inert gas supply pipes 131 a and 131 b.
  • the purge gas (the inert gas) source 133 may be included in the third gas supply unit (first purge gas supply unit). Also, according to the number of the process modules provided in the substrate processing system, the same component may be added or removed.
  • the fourth gas supply unit is configured to supply an inert gas to the process chambers 110 a and 110 b through the process gas supply pipes 111 a and 111 b and the reactive gas supply pipes 121 a and 121 b.
  • Fourth purge gas supply pipes 141 a, 141 b, 151 a and 151 b, MFCs 145 a, 145 b, 155 a and 155 b and valves 146 a, 146 b, 156 a and 156 b are provided between a second purge gas (the inert gas) source 143 and the supply pipes.
  • the fourth gas supply unit (second purge gas supply unit) includes these components. Also, although the gas sources of the third gas supply unit and the fourth gas supply unit are separately configured herein, only one integrated gas source may be provided.
  • a gas exhaust unit that exhausts the atmospheres in the chamber 100 a and the chamber 100 b is connected to the process module 110 a.
  • an APC 222 a, a common gas exhaust pipe 225 a and process chamber exhaust pipes 224 a and 224 b are provided between an exhaust pump 223 a and the chambers 100 a and 100 b.
  • the gas exhaust unit includes the APC 222 a, the supply gas exhaust pipe 225 a and the process chamber exhaust pipes 224 a and 224 b.
  • the atmospheres in the chamber 100 a and the chamber 100 b are configured to be exhausted by a single exhaust pump.
  • conductance adjusters 226 a and 226 b that adjust exhaustion conductance of each of the process chamber exhaust pipes 224 a and 224 b may be provided and may be configured to provide as a component of the gas exhaust unit.
  • the exhaust pump 223 a may be configured to provide as a component of the gas exhaust unit.
  • the chamber 100 is configured as a single wafer substrate processing apparatus as illustrated in FIG. 5 .
  • the chamber 100 one process of manufacturing the semiconductor device is performed.
  • the chambers 100 a, 100 b, 100 c, 100 d, 100 e, 100 f, 100 g and 100 h are configured to have the same configuration as illustrated in FIG. 5 .
  • the chamber 100 a will be described as an example.
  • the chamber 100 includes a process container 202 .
  • the process container 202 has, for example, a circular cross-section and is configured as a planar closed container. Also, the process container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS) or quartz.
  • a process space (process chamber) 201 and a transfer space 203 in which the wafer 200 such as a silicon wafer serving as a substrate is processed are formed in the process container 202 .
  • the process container 202 includes an upper container 202 a and a lower container 202 b.
  • a partition plate 204 is provided between the upper container 202 a and the lower container 202 b.
  • a space which is surrounded by the upper container 202 a and located above the partition plate 204 is referred to as the process space (process chamber) 201 and a space that is surrounded by the lower container 202 b and located under the partition plate 204 is referred to as a transfer space.
  • the substrate loading and unloading port 1480 adjacent to the gate valve 1490 is provided on a side surface of the lower container 202 b and the wafer 200 moves between the substrate loading and unloading port 1480 and a transfer chamber (not illustrated) through the substrate loading and unloading port 1480 .
  • a plurality of lift pins 207 are provided on a bottom portion of the lower container 202 b. Also, the lower container 202 b is grounded.
  • the substrate support unit 210 that supports the wafer 200 is provided in the process chamber 201 .
  • the substrate support unit 210 includes a placement surface 211 on which the wafer 200 is placed and a substrate placement unit 212 having the placement surface 211 on a surface thereof.
  • a heater 213 serving as a heating unit may be provided in the substrate support unit 210 . When the heating unit is provided, the substrate is heated and thus, the quality of a film formed on the substrate may be improved.
  • Through holes 214 through which the lift pins 207 are passed may be provided in the substrate placement unit 212 at positions corresponding to the lift pins 207 .
  • the substrate placement unit 212 is supported by a shaft 217 .
  • the shaft 217 passes through a bottom portion of the process container 202 and is connected to a lifting mechanism 218 outside the process container 202 .
  • the lifting mechanism 218 When the shaft 217 and the substrate placement unit 212 are lifted by operating the lifting mechanism 218 , the wafer 200 placed on the substrate placement surface 211 may be lifted.
  • the vicinity of a lower end of the shaft 217 is covered by bellows 219 and thus, the process chamber 201 is airtightly maintained.
  • the substrate placement unit 212 When the wafer 200 is transferred, the substrate placement unit 212 is lowered until the substrate placement surface 211 is moved at a position (wafer transfer position) of the substrate loading and unloading port 1480 , and when the wafer 200 is processed, the substrate placement unit 212 is raised until the wafer 200 is moved at a position (wafer process position) of the process chamber 201 as illustrated in FIG. 5 .
  • the lift pin 207 when the substrate placement unit 212 is lowered at the wafer transfer position, an upper end of the lift pin 207 protrudes from an upper surface of the substrate placement surface 211 and thus, the lift pin 207 is configured to support the wafer 200 from a lower side. Also, when the substrate placement unit 212 is raised at the wafer process position, the lift pin 207 is buried from the upper surface of the substrate placement surface 211 and thus, the substrate placement surface 211 is configured to support the wafer 200 from a lower side. Also, since the lift pin 207 is directly in contact with the wafer 200 , preferably, the lift pin 207 is formed of a material such as quartz or alumina. Also, the lift mechanism is provided in the lift pin 207 and thus, the substrate placement unit 212 and the lift pin 207 may be configured to relatively move.
  • An exhaust port 221 serving as a first exhaust unit that exhausts the atmosphere of the process chamber 201 is provided on an inner wall of the process chamber 201 [upper container 202 a ].
  • a process chamber exhaust pipe 224 is connected to the exhaust port 221 and a valve 227 is sequentially connected thereto in series.
  • the first exhaust unit (exhaust line) mainly includes the exhaust port 221 , the process chamber exhaust pipe 224 and the valve 227 .
  • a vacuum pump 223 may be included in the first exhaust unit.
  • a first gas inlet 241 a for supplying various gases into the process chamber 201 is provided at a sidewall of the upper container 202 a.
  • the first gas supply pipe 111 a is connected to the first gas inlet 241 a.
  • a second gas inlet 241 b for supplying various gases into the process chamber 201 is provided on an upper surface (ceiling wall) of a shower head 234 provided on an upper portion of the process chamber 201 .
  • the second gas supply pipe 121 b is connected to the second gas inlet 241 b.
  • the first gas inlet 241 a to which a first gas is supplied is provided on the upper surface (ceiling wall) of the shower head 234 , and thus, the first gas may be supplied through a center of a first buffer space 232 a.
  • the gas in the first buffer space 232 a flows from a center thereof toward an outer circumference thereof, the gas in the space uniformly flows and thus, an amount of gas supplied to the wafer 200 may be uniformly maintained.
  • the shower head 234 includes the first buffer chamber (space) 232 a, first distribution holes 234 a, a second buffer chamber (space) 232 b and second distribution holes 234 b.
  • the shower head 234 is provided between the second gas inlet 241 b and the process chamber 201 .
  • the first gas introduced through the first gas inlet 241 a is supplied into the first buffer space 232 a (first distribution unit) of the shower head 234 .
  • the second gas inlet 241 b is connected to a cover 231 of the shower head 234 , and a second gas introduced through the second gas inlet 241 b is supplied into the second buffer space 232 b (second distribution unit) of the shower head 234 through a hole 231 a provided in the cover 231 .
  • the shower head 234 is formed of a material such as quartz, alumina, stainless steel, aluminum or the like.
  • the cover 231 of the shower head 234 is formed of a conductive metal, and may be used as an activation unit (excitation unit) for exciting a gas present in the first buffer space 232 a, the second buffer space 232 b or the process chamber 201 .
  • an insulating block 233 is provided between the cover 231 and the upper container 202 a and thus, the cover 231 is insulated from the upper container 202 a.
  • a matching unit 251 and a high frequency power source 252 are connected to an electrode [cover 231 ] serving as the activation unit and the electrode [cover 231 ] may be configured to supply electromagnetic waves (radio frequency power or microwave).
  • a gas guide 235 that forms the flow of the second gas supplied to the second buffer space 232 b may be provided.
  • the gas guide 235 has a conical shape in which a diameter is increased toward a diameter direction of the wafer 200 about the hole 231 a.
  • a horizontal diameter of a lower end of the gas guide 235 is formed to further extend to an outer circumference than ends of the first distribution hole 234 a and the second distribution hole 234 b.
  • a shower head exhaust port 240 a serving as a first shower head exhaust unit that exhausts the atmosphere of the first buffer space 232 a is provided on an upper surface of an inner wall of the first buffer space 232 a.
  • a shower head exhaust pipe 236 is connected to the shower head exhaust port 240 a, and a valve 237 x and a valve 237 that controls the inside of the first buffer space 232 a at a predetermined pressure are sequentially connected to the shower head exhaust pipe 236 in series.
  • the first shower head exhaust unit mainly includes the shower head exhaust port 240 a, the valve 237 x and the shower head exhaust pipe 236 .
  • a shower head exhaust port 240 b serving as a second shower head exhaust unit that exhausts the atmosphere of the second buffer space 232 b is provided on an upper surface of an inner wall of the second buffer space 232 b.
  • the shower head exhaust pipe 236 is connected to the shower head exhaust port 240 b, and a valve 237 y and the valve 237 that controls the inside of the second buffer space 232 b at a predetermined pressure are sequentially connected to the shower head exhaust pipe 236 in series.
  • the second shower head exhaust unit mainly includes the shower head exhaust port 240 b, the valve 237 y and the shower head exhaust pipe 236 .
  • a plurality of distribution holes 234 a are formed to extend from the first buffer space 232 a to the process chamber 201 .
  • a plurality of distribution holes 234 b are formed to extend from the second buffer space 232 b to the process chamber 201 .
  • the second buffer space 232 b is provided above the first buffer space 232 a.
  • the distribution holes (distribution pipes) 234 b are formed to pass through the first buffer space 232 a from the second buffer space 232 b and extend to the process chamber 201 .
  • a gas supply unit is connected to a gas introducing hole 241 connected to the cover 231 of the shower head 234 .
  • a process gas, a reactive gas and a purge gas are supplied through the gas supply unit.
  • the chamber 100 includes a controller 260 that controls operations of each unit of the chamber 100 .
  • the controller 260 is schematically illustrated in FIG. 6 .
  • the controller 260 serving as a control unit (control device) is configured as a computer that includes a central processing unit (CPU) 260 a, a random access memory (RAM) 260 b, a memory device 260 c and an I/O port 260 d.
  • the RAM 260 b, the memory device 260 c and the I/O port 260 d are configured to exchange data with the CPU 260 a through an internal bus 260 e.
  • An I/O device 261 configured as, for example, a touch panel or an external memory device 262 is connected to the controller 260 .
  • the memory device 260 c is configured as, for example, a flash memory and a hard disk drive (HDD).
  • a control program controlling operations of the substrate processing apparatus or a process recipe describing sequences or conditions of substrate processing to be described below are readably stored in the memory device 260 c.
  • the process recipe which is a combination of sequences, causes the controller 260 to execute each sequence in a substrate processing process to be described below in order to obtain a predetermined result, and functions as a program.
  • program recipe, a control program and the like are collectively simply called a “program.”
  • the term “program” is used in this specification, it may refer to either the program recipe or the control program or both thereof.
  • the RAM 260 b is configured as a memory area (work area) in which a program, data and the like read by the CPU 260 a are temporarily maintained.
  • the I/O port 260 d is connected to the gate valves 1330 , 1350 and 1490 , the lifting mechanism 218 , the heater 213 , pressure adjusters 222 and 238 , the vacuum pump 223 , the matching unit 251 , the high frequency power source 252 and the like.
  • the I/O port 260 d may be connected to a transfer robot 105 , an atmosphere transfer unit 102 , a load lock unit 103 , MFCs [ 115 ( 115 a and 115 b ), 125 ( 125 a, 125 b and 125 x ), 135 ( 135 a, 135 b and 135 x ), 145 ( 145 a, 145 b and 145 x ), 155 ( 155 a and 155 b ) and 165 ( 165 a and 165 b )], valves 237 ( 237 e and 237 f ), process chamber side valves [ 116 ( 116 a and 116 b ), 126 ( 126 a and 126 b ), 136 ( 136 a and 136 b ), 176 ( 176 a and 176 b ) and 186 ( 186 a and 186 b )], a tank side valve 160 , vent valves 170 ( 170 (
  • the CPU 260 a reads and executes the control program from the memory device 260 c and reads the process recipe from the memory device 260 c according to an input of a manipulating command from the I/O device 261 . Also, to comply with the content of the read process recipe, the CPU 260 a is configured to control an open or close operation of a gate valve 1330 , 1350 , 1490 ( 1490 a, 1490 b, 1490 c, 1490 d, 1490 e, 1490 f, 1490 g and 1490 h ), a lifting operation of the lifting mechanism 218 , a power supply operation to the heater 213 , a pressure adjusting operation by the pressure adjusters [ 222 ( 222 a ) and 238 ], an ON/OFF control by the vacuum pump 223 , a gas activation operation of the RPU 124 , a flow rate adjusting operation by the MFCs [ 115 ( 115 a and 115 b ), 125 ( 125 a and
  • the controller 260 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer.
  • the controller 260 according to the present embodiment may be configured by preparing an external memory device 262 [for example, a magnetic tape, a magnetic disk such as a flexible disk and a hard disk, an optical disc such as a CD or a DVD, a magneto-optical disc such as an MO and a semiconductor memory such as a USB memory and a memory card] recording the above-described program and then installing the program in the general-purpose computer using the external memory device 262 .
  • a method of supplying the program to the computer is not limited to supplying through the external memory device 262 .
  • a communication line such as a network 263 (the Internet or an exclusive line) may be used to supply the program without the external memory device 262 .
  • the memory device 260 c or the external memory device 262 is configured as a non-transitory computer-readable recording medium.
  • these are also collectively simply called a recording medium.
  • recording medium refers to either the memory device 260 c or the external memory device 262 or both thereof.
  • wafer refers to “the wafer itself,” or a “laminate (aggregate) of a wafer, a predetermined layer, film and the like formed on a surface thereof,” that is, the wafer refers to a wafer including a predetermined layer, film and the like formed on a surface thereof.
  • surface of the wafer refers to “a surface (exposed surface) of the wafer itself” or “a surface of a predetermined layer, film and the like formed on the wafer, that is, the outermost surface of the wafer as the laminate.”
  • a predetermined gas when it is described in this specification that “a predetermined gas is supplied to the wafer,” it means that “a predetermined gas is directly supplied to a surface (exposed surface) of the wafer itself” or “a predetermined gas is supplied to a layer, film and the like formed on the wafer, that is, to the outermost surface of the wafer as the laminate.”
  • a predetermined layer (or film) when it is described in this specification that “a predetermined layer (or film) is formed on the wafer,” it means that “a predetermined layer (or film) is directly formed on a surface (exposed surface) of the wafer itself” or “a predetermined layer (or film) is formed on a layer, film and the like formed on the wafer, that is, a predetermined layer (or film) is formed on the outermost surface of the wafer as the laminate.”
  • the wafer 200 is loaded into the process chamber 201 .
  • the substrate support unit 210 is lowered by the lifting mechanism 218 and the lift pin 207 protrudes from an upper surface of the substrate support unit 210 through the through hole 214 .
  • the gate valve 1490 is opened and then the wafer 200 is placed on the lift pin 207 through the gate valve 1490 .
  • the wafer 200 is placed from the lift pin 207 to the substrate support unit 210 .
  • the process chamber 201 is exhausted through the process chamber exhaust pipe 224 so that the process chamber 201 has a predetermined pressure (degree of vacuum).
  • a degree of opening of the APC valve serving as the pressure adjuster 222 ( 222 a ) is fed back and controlled based on a pressure value measured by a pressure sensor.
  • an amount of power supply of the heater 213 is fed back and controlled so that the process chamber 201 has a predetermined temperature based on a temperature value measured by a temperature sensor (not illustrate).
  • the substrate support unit 210 is pre-heated by the heater 213 , a change of a temperature of the wafer 200 or the substrate support unit 210 is removed and then the substrate support unit 210 is placed for a predetermined time.
  • the remaining moisture or the gas may be vacuum-exhausted or removed by purging by the supply of an N 2 gas. Through this, the preparation before the film forming process is completed. Also, when the process chamber 201 is exhausted at a predetermined pressure, the process chamber 201 may be vacuum-exhausted once or to a reachable degree of vacuum.
  • an amino silane-based gas serving as a first gas (source gas) is supplied into the process chamber 201 of the first gas supply unit.
  • the amino silane-based gas includes, for example, bis (diethylamino) silane (BDEAS) (H 2 Si(NEt 2 ) 2 ).
  • BDEAS bis (diethylamino) silane
  • the gas valve 160 is opened and the amino silane-based gas is supplied from the gas source to the chamber 100 .
  • the process chamber side valve 116 a is opened and the amino silane-based gas is adjusted by the MFC 115 a to have a predetermined flow rate.
  • the amino silane-based gas having the adjusted flow rate passes through the first buffer space 232 a and is supplied into the process chamber 201 in a decreased pressure state through the gas supply hole 234 a of the shower head 234 .
  • the process chamber 201 is continuously exhausted by the exhaust system and the inner pressure of the process chamber 201 is controlled to be within a predetermined pressure range (first pressure).
  • first pressure for example, in a range of 100 Pa to 20,000 Pa.
  • amino silane is supplied to the wafer 200 .
  • a silicon-containing layer is formed on the wafer 200 .
  • the gas valve 116 a of the first gas supply pipe 111 a is closed and the supply of the amino silane-based gas is stopped.
  • the first purge process S 204 is performed.
  • the purge process it may be configured to perform a discharging process in which an inert gas is supplied and the residual gas is extruded in addition to the discharge of the gas by simply exhausting (vacuum suction) the gas. Also, a combination of the vacuum suction and the supply of the inert gas may be performed. Also, the vacuum suction and the supply of the inert gas may be alternately performed.
  • valve 237 of the shower head exhaust pipe 236 is opened and the gas present in the first buffer space 232 a may be exhausted through the shower head exhaust pipe 236 .
  • inner pressures (exhaustion conductance) of the shower head exhaust pipe 236 and the first buffer space 232 a are controlled by the valve 227 and the valve 237 .
  • the valve 227 and the valve 237 may be controlled so that the exhaustion conductance through the shower head exhaust pipe 236 in the first buffer space 232 a is greater than the exhaustion conductance to the process chamber exhaust pipe 224 through the process chamber 201 .
  • a gas flow from the first gas inlet 241 a which is an end of the first buffer space 232 a toward the shower head exhaust port 240 a which is another end thereof is formed.
  • a gas attached to a wall of the first buffer space 232 a or a gas floating in the first buffer space 232 a is exhausted through the shower head exhaust pipe 236 without entering in the process chamber 201 .
  • an inner pressure of the first buffer space 232 a and an inner pressure (exhaustion conductance) of the process chamber 201 may be adjusted to suppress a reflux of the gas from the process chamber 201 to the first buffer space 232 a.
  • the vacuum pump 223 continuously operates and the gas present in the process chamber 201 is exhausted through the vacuum pump 223 .
  • the valve 227 and the valve 237 may be adjusted so that the exhaustion conductance from the process chamber 201 to the process chamber exhaust pipe 224 is greater than the exhaustion conductance to the first buffer space 232 a.
  • the valve 227 and the valve 237 are adjusted, the gas flow toward the process chamber exhaust pipe 224 via the process chamber 201 is formed and the residual gas in the process chamber 201 may be exhausted.
  • the valve 136 a is opened, the MFC 135 a is adjusted and the inert gas is supplied, the inert gas may be surely supplied to the substrate and thus, the removal efficiency of the residual gas on the substrate may be improved.
  • valve 136 a After a predetermined time has elapsed, the valve 136 a is closed and the supply of the inert gas is stopped, and at the same time, the valve 237 is closed and a flow path from the first buffer space 232 a to the shower head exhaust pipe 236 is blocked.
  • the valve 237 is closed while the vacuum pump 223 continuously operates. In this manner, since the flow toward the process chamber exhaust pipe 224 via the process chamber 201 is not affected by the shower head exhaust pipe 236 , it is possible to more reliably supply the inert gas onto the substrate and thus, the removal efficiency of the residual gas on the substrate may be further improved.
  • purging of the atmosphere from the process chamber refers to an extrusion operation of the gas by supplying of the inert gas in addition to the discharging of the gas by simply vacuum suction. Therefore, in the first purge process, the inert gas is supplied into the first buffer space 232 a and the discharging operation by the extrusion of the residual gas may be performed. Also, a combination of the vacuum suction and the supply of the inert gas may be performed. Also, the vacuum suction and the supply of the inert gas may be alternately performed.
  • a high flow rate of an N 2 gas supplied into the process chamber 201 is not necessary, and for example, an amount of the N 2 gas as much as the volume of the process chamber 201 may be supplied.
  • an effect on a subsequent process may be reduced.
  • the purge time may be reduced and the manufacturing throughput may be improved. Also, it is possible to suppress the consumption of the N 2 gas as much as possible.
  • a temperature of the heater 213 ranges from 200° C. to 750° C. which is the same as when the source gas is supplied to the wafer 200 , preferably, from 300° C. to 600° C., and more preferably, from 300° C. to 550° C.
  • a supply flow rate of the N 2 gas serving as the purge gas supplied through each inert gas supply system is, for example, ranging from 100 sccm to 20,000 sccm.
  • a rare gas such as Ar, He, Ne, Xe or the like other than the N 2 gas serving as the purge gas may be used.
  • the valve 126 is opened and an oxygen-containing gas serving as a second gas (reactive gas) is supplied into the process chamber 201 through the gas introducing hole 241 b, the second buffer space 232 b and the plurality of distribution holes 234 b.
  • the oxygen-containing gas includes, for example, an oxygen (O 2 ) gas or ozone (O 3 ), water (H 2 O), a nitrous oxide (N 2 O) gas and the like.
  • O 2 gas oxygen
  • the O 2 gas is supplied into the process chamber 201 through the second buffer space 232 b and the distribution hole 234 b, the gas is uniformly supplied onto the substrate. Therefore, a film thickness may be uniformly formed.
  • the second gas activated through the RPU 124 serving as an activation unit (excitation unit) may be supplied into the process chamber 201 .
  • the MFC 125 is controlled so that a flow rate of the O 2 gas is a predetermined flow rate.
  • a supply flow rate of the O 2 gas is, for example, in a range of 100 sccm to 10,000 sccm.
  • an inner pressure of the second buffer space 232 b is within a predetermined pressure range.
  • the RPU 124 is in an ON state (a state in which power is turned on) and is controlled so that the O 2 gas is activated (excited).
  • the silicon-containing layer is modified. For example, silicon atoms or a modified layer containing silicon atoms is formed. Also, when the O 2 gas activated by providing the RPU 124 is supplied onto the wafer 200 , a number of modified layers may be formed.
  • the modified layer is formed, for example, to have a predetermined thickness, a predetermined distribution and a predetermined penetration depth of an oxygen component with respect to the silicon-containing layer according to the inner pressure of the process chamber 201 , the flow rate of the O 2 gas, the temperature of the wafer 200 and a power supply state of the RPU 124 .
  • valve 126 After a predetermined time has elapsed, the valve 126 is closed and the supply of the O 2 gas is stopped.
  • the second purge process (S 206 ) is performed by exhausting the O 2 gas present in the process chamber 201 or the O 2 gas present in the second buffer space 232 b through the first exhaust unit.
  • the second purge process (S 206 ) is performed in the same manner as the above-described first purge process (S 204 ).
  • the vacuum pump 223 continuously operates, and the gas present in the process chamber 201 is exhausted through the process chamber exhaust pipe 224 .
  • the valve 227 and the valve 237 may be adjusted so that the exhaustion conductance from the process chamber 201 to the process chamber exhaust pipe 224 is greater than the exhaustion conductance to the second buffer space 232 b.
  • a gas flow toward the process chamber exhaust pipe 224 via the process chamber 201 is formed and the residual gas in the process chamber 201 may be exhausted.
  • the gas valve 136 b when the gas valve 136 b is opened, the MFC 135 b is adjusted and the inert gas is supplied, it is possible to surely supply the inert gas onto the substrate and thus, the removal efficiency of the residual gas on the substrate may be further improved.
  • the gas valve 136 b is closed and the supply of the inert gas is stopped, and at the same time, the valve 237 b is closed and a space between the second buffer space 232 b and the shower head exhaust pipe 236 is blocked.
  • the valve 237 b is closed while the vacuum pump 223 continuously operates.
  • purging the atmosphere from the process chamber refers to an extrusion operation of the gas by supplying of the inert gas in addition to the discharging of the gas by simply vacuum suction. Therefore, in the purge process, the inert gas is supplied into the second buffer space 232 b and the discharging operation by the extrusion of the residual gas may be performed. Also, a combination of the vacuum suction and the supply of the inert gas may be performed. Also, the vacuum suction and the supply of the inert gas may be alternately performed.
  • a high flow rate of an N 2 gas supplied into the process chamber 201 is unnecessary, and for example, an amount of N 2 gas as much as the volume of the process chamber 201 may be supplied.
  • an effect on the subsequent process may be reduced.
  • the purge time may be reduced and thus, the manufacturing throughput may be improved. Also, it is possible to suppress the consumption of the N 2 gas as much as possible.
  • a temperature of the heater 213 ranges from ranging from 200° C. to 750° C., which is the same as when a source gas is supplied to the wafer 200 , preferably, from 300° C. to 600° C., and more preferably, from 300° C. to 550° C.
  • a supply flow rate of an N 2 gas serving as a purge gas supplied through each inert gas supply system is, for example, ranging from 100 sccm to 20,000 sccm.
  • a rare gas serving as a purge gas such as Ar, He, Ne, Xe or the like other than the N 2 gas may be used.
  • the controller 260 determines whether processes S 203 through S 206 in the film forming process (S 301 A) are performed a predetermined number n of cycles or not (wherein n is a natural number). That is, whether a film having a desired thickness is formed on the wafer 200 or not is determined.
  • n is a natural number
  • the controller 260 determines whether processes S 203 through S 206 in the film forming process (S 301 A) are performed a predetermined number n of cycles or not (wherein n is a natural number). That is, whether a film having a desired thickness is formed on the wafer 200 or not is determined.
  • the above-described processes S 203 through S 206 are referred to as one cycle and the cycle is performed at least once [Process S 207 ]
  • an insulating film containing silicon and oxygen that is, an SiO film may be formed on the wafer 200 to have a predetermined thickness.
  • the above-described cycle is repeated.
  • a cycle of processes S 203 through S 206 is repeated.
  • the film forming process (S 301 A) ends and a transfer pressure adjusting process (S 208 ) and a substrate unloading process (S 209 ) are performed.
  • the inert gas when the first gas is supplied, the inert gas is supplied to the second buffer space 232 b serving as a second distribution unit, and when the second gas is supplied, the inert gas is supplied to the first buffer space 232 a serving as a first distribution unit.
  • each gas may be prevented from flowing back into the other buffer space.
  • the process chamber 201 or the transfer space 203 is exhausted through the process chamber exhaust pipe 224 so that an inner pressure of the process chamber 201 or the transfer space 203 is a predetermined pressure (degree of vacuum).
  • the inner pressure of the process chamber 201 or the transfer space 203 is adjusted to an inner pressure or more of the vacuum transfer chamber 1400 .
  • it may be configured to maintain by the lift pin 207 so that the wafer 200 is cooled to a predetermined temperature.
  • the gate valve 1490 is opened and the wafer 200 is unloaded into the vacuum transfer chamber 1400 through the transfer space 203 .
  • the processing of the wafer 200 is performed. Meanwhile, as illustrated in FIGS. 1 and 4 , even when a group including an odd number of wafers is transferred to the processing apparatus including an even number of chambers 100 , the increase of productivity is required.
  • a method of increasing the productivity includes, for example, increasing the processing number (processing throughput) of the wafers 200 per unit of time, maintaining process performance, reducing the maintenance time, reducing the frequency of maintenance or the like.
  • the odd number of wafers 200 are transferred to the processing apparatus illustrated in FIGS. 1 and 4 , for example, in the process module 110 a, it is required that the processing of the wafer 200 is performed in one chamber 100 a and the processing of the wafer 200 is performed in the other chamber 100 b.
  • the group including the odd number of wafers includes a single pod 1001 or a plurality of pods 1001 in which the odd number of wafers 200 are stored.
  • the challenges A to C to be described below remarkably occur when a small lot including about 11 to 25 sheets is manufactured, the same challenges also occur when a lot including 25 sheets or more is manufactured.
  • the number of wafers at one lot may vary in each lot. In this case, the number of wafers transferred to the processing apparatus is different from the number of chambers of the processing apparatus. When the number of wafers is different from the number of chambers, there is a challenge in that the chambers not used are generated and thus, productivity is decreased.
  • the wafer 200 is transferred to the one chamber 100 a and is not transferred to the other chamber 100 b, when either a process gas or a reactive gas or both thereof is supplied into the other chamber 100 b, a unnecessary film is formed on a component in the other chamber 100 b.
  • the component refers to, for example, the substrate support unit 210 , and specifically, to the substrate placement surface 211 . Therefore, there is a challenge in that productivity is decreased due to the increasing of a thickness of a film formed on a surface of the component, the increasing of maintenance time (cleaning time and the number of replaced parts) by increasing particles or the increasing of the frequency of maintenance (frequencies of cleaning and replacing parts).
  • the process gas or the reactive gas or both thereof does not contribute to film formation, there is a challenge in that the usage efficiency of the gas is reduced.
  • the increasing of maintenance time, the increasing of the frequency of maintenance or the extra consumption of the process gas may occur even when two chamber exhaust systems are individually provided.
  • a flow velocity of the gas in the one chamber 100 a may be greater than a flow velocity of the gas in the one chamber 100 a when processed in both chambers.
  • the flow velocity of the gas is changed in each processing of the wafer 200 , there is a challenge in that the process performance in each chamber 100 is changed and productivity is decreased.
  • the gas exhausted from the one chamber 100 a is entered into the other chamber 100 b through the exhaust pipe of the other chamber 100 b.
  • the change of the flow velocity of the gas is caused by the change of the exhaustion conductance.
  • the inventors have found that it is possible to solve the above-described challenges by providing the above-described fourth gas supply unit and controlling the fourth gas supply unit in the substrate processing process as described below. That is, even in the case of processing a group including the odd number of wafers, productivity may be improved. Also, the inventors have found that it is possible to improve the processing uniformity in each wafer 200 .
  • a second substrate processing process (S 200 B) performed when the wafer 200 is not transferred will be described.
  • a case in which the substrate is transferred to the chamber 100 a and the first substrate processing process (S 200 A) is performed in the chamber 100 a as illustrated in FIG. 4 , and the substrate is not transferred to the chamber 100 b and the second substrate processing process (S 200 B) is performed in the chamber 100 b will be described.
  • the second substrate processing process (S 200 B) includes performing a third purge process (S 403 ) corresponding to the first process gas supply process (S 203 ) of the first processing process and performing a fourth purge process (S 405 ) corresponding to the second process gas supply process (S 205 ) of the first processing process.
  • a third purge process (S 403 ) corresponding to the first process gas supply process (S 203 ) of the first processing process and performing a fourth purge process (S 405 ) corresponding to the second process gas supply process (S 205 ) of the first processing process.
  • S 403 the third purge process
  • S 405 the fourth purge process
  • the flow rate of the inert gas is set so that the exhaustion conductance from the chamber 100 b in which the second substrate processing process is performed to the process chamber exhaust pipe 224 b is equal to the exhaustion conductance from the chamber 100 a in which the first substrate processing process is performed to the process chamber exhaust pipe 224 a.
  • the flow rate is set to the same flow rate as the flow rate of the first process gas supplied into the chamber 100 a.
  • the molecular weight of the first process gas is different from the molecular weight of the inert gas, there is no need to be the same and the flow rate may be set to be the same exhaustion conductance.
  • the inert gas is supplied using the fourth gas supply unit
  • it may be configured to supply using the third gas supply unit.
  • the number of pipes may be reduced.
  • the first purge process, the second purge process, the third purge process and the fourth purge process when the switch of the flow rate is required, it is possible that the change of the flow rate is delayed. Even in the case, when the fourth gas supply unit is provided, the waiting time for the change of the flow rate by the MFC 135 may not be removed.
  • the inert gas supplied to the process chamber 201 through the fourth gas supply unit has the same flow rate as that in the supply flow path of the first process gas, balance between the exhaustion conductance of the chamber 100 a and the exhaustion conductance of the chamber 100 b is easily maintained. Also, when the conductance difference is within an acceptable range, other flow paths may be used.
  • the third purge process (S 403 ), either before or after or both before and after the process chamber 201 of each chamber is purged, it may be configured to purge the first buffer space 232 a.
  • the total amount of purge gas supplied into the chamber 100 b is configured to be the same as the total amount of purge gas supplied into the chamber 100 a.
  • the exhaust balance between the chamber 100 a and the chamber 100 b may also be maintained in the purge process of the first buffer space 232 a.
  • the supply of the purge gas to the first buffer space 232 a may be performed through the first gas supply pipe 111 a via the third gas supply unit and may be performed through the first gas supply pipe 111 a via the fourth gas supply unit.
  • an inert gas is supplied into the process chamber 201 through the second buffer space 232 b via the fourth gas supply unit.
  • the valve 156 b is opened and an inert gas of which a flow rate is adjusted by the MFC 155 b is supplied into the chamber 100 b through the second gas supply pipe 121 b.
  • the inert gas is supplied using the fourth gas supply unit, it may be configured to supply using the third gas supply unit.
  • the flow rate of the inert gas in the fourth purge process (S 405 ) is set to the same flow rate as the flow rate of the second process gas supplied into the chamber 100 a. Also, when the molecular weight of the second process gas is different from the molecular weight of the inert gas, there is no need to be the same and the flow rate may be set to be the same exhaustion conductance. Also, when the supply of the inert gas to the process chamber 201 through the fourth gas supply unit has the same flow rate as that in the supply flow path of the second process gas, the balance between the exhaustion conductance of the chamber 100 a and the exhaustion conductance of the chamber 100 b is easily maintained. Also, when the conductance difference is within an acceptable range, other flow paths may be used.
  • the fourth purge process (S 405 ), either before or after or both before and after the process chamber 201 of each chamber is purged, it may be configured to purge the second buffer space 232 b.
  • the second buffer space 232 b is purged, the total amount of purge gas supplied into the chamber 100 b is configured to be the same as the total amount of purge gas supplied into the chamber 100 a.
  • the exhaust balance between the chamber 100 a and the chamber 100 b may also be maintained in the purge process of the second buffer space 232 b.
  • the supply of the purge gas to the first buffer space 232 a may be performed through the first gas supply pipe 111 a via the third gas supply unit and may be performed through the first gas supply pipe 111 a via the fourth gas supply unit.
  • the second process gas supply process (S 205 ) of the first substrate processing process is performed in the chamber 100 a.
  • the second process gas supply process (S 205 ) in a case in which the second process gas is activated, when the activated second process gas is supplied only into the chamber 100 a, the second process gas having high activity may be supplied by the chamber 100 a compared to a case in which the second process gas supply process (S 205 ) is performed in two chambers [the chamber 100 a and the chamber 100 b ].
  • the fourth purge process (S 405 ) it may be configured to exhaust the activated second process gas through the vent line 171 b.
  • An exhaust amount of the activated second process gas is set to an amount of the gas corresponding to the amount of the gas supplied into the chamber 100 b in the second process gas supply process (S 205 ).
  • the vent line 171 b is provided in the upstream side of the MFC 125 b as an example, the vent line 171 b may be provided in the downstream side of the MFC 125 b.
  • the vent line 171 b is provided in the downstream side of the MFC 125 b, the adjustment of the flow rate may be more precisely performed.
  • the fine adjustment of the conductance may be performed by the conductance adjusters 226 a and 226 b.
  • the adjustment of the flow rate of the gas may be difficult by a difference between lengths of the exhaust pipes or a difference between lengths of the gas supply pipes.
  • the power of the heater 213 may be OFF.
  • the power supply to the heater 213 is OFF, power consumption may be reduced.
  • a temperature is excessively decreased when the power supplied to the heater 213 is OFF, the power may be lowered without completely turning OFF when the subsequent substrate processing is affected.
  • the third purge process (S 403 ) and the fourth purge process (S 405 ) are performed without the wafer 200 , a temperature of the substrate support unit 210 may be lowered.
  • the substrate support unit 210 When the processing time per one wafer 200 is short, the substrate support unit 210 should be maintained at a predetermined temperature. In this case, the power of the heater 213 may be increased so that the temperature of the substrate support unit 210 is not lowered by the supply of the purge gas.
  • the number of the wafers 200 stored in the pod 1001 is counted and information on the number of the wafers 200 is recorded in the recording medium.
  • the wafer 200 stored in the pod 1001 is sequentially transferred from the pod 1001 to the load lock chamber 1300 using the atmosphere transfer robot 1220 .
  • the vacuum transfer robot 1700 transfers the two wafers 200 from the load lock chamber 1300 to the process module 110 .
  • the first transfer determination process (T 103 ), whether the wafer 200 stored in the pod 1001 is a final substrate or not and a substrate is present in the load lock chamber 1300 or not is determined. Alternatively, whether the wafer 200 stored in the pod 1001 is a final substrate of a continuous processing or not and a substrate is present in the load lock chamber 1300 or not is determined.
  • the continuous processing refers to continuously processing a plurality of pods 1001 .
  • a load lock (L/L) placement place change process (T 105 ) is performed, and when the wafer 200 stored in the pod 1001 is not the final substrate and there is a substrate in the load lock chamber 1300 , a second substrate transfer process (T 104 ) is performed.
  • the second substrate transfer process (T 104 ) is performed after two wafers 200 are stored in the load lock chamber 1300 .
  • an inner pressure of the load lock chamber 1300 is adjusted to have the same pressure as the vacuum transfer chamber 1400 .
  • the gate valve 1350 is opened and the vacuum transfer robot 1700 transfers the two wafers 200 to the process module 110 which is a target.
  • the first substrate processing process (S 200 A) is performed.
  • the substrate is placed on one side in the placement surface 1311 in the load lock chamber 1300 . Since the placement place determines the chamber 100 used in the processing of the wafer 200 , the substrate is placed on the placement surface 1311 corresponding to the chamber which is a transfer target. For example, when the substrate is processed in any one of the chambers 100 a, 100 c, 100 e and 100 g, the substrate is placed on the placement surface 1311 a. Also, when the substrate is processed in any one of the chambers 100 b, 100 d, 100 f and 100 h, the substrate is placed on the placement surface 1311 b.
  • the robot 1220 is controlled so that the substrate is transferred to the placement surface 1311 b in order to use any one of the chambers 100 b, 100 d, 100 f and 100 h at an (n+1) th lot (wherein n is a natural number).
  • n is a natural number.
  • the transfer place it may suppress the variation of number of uses of the chamber 100 and a time between the maintenance of the chamber 100 and the following maintenance may be increased. That is, the frequency of maintenance is reduced and thus, productivity may be improved. Also, it is possible to increase the processing number (processing throughput) of the wafers 200 per unit time.
  • the L/L placement place change process (T 105 ), whether which chamber among the chambers 100 is a chamber in which the wafer 200 is transferred or a chamber in which the wafer 200 is not transferred in the process module 110 which is a transfer target is determined. The determination is performed, for example, based on the placement information on the L/L. A program is performed so that the first substrate processing process (S 200 A) is performed in the chamber in which the wafer 200 is transferred, and a program is performed so that the second substrate processing process (S 200 B) is performed in the chamber in which the wafer 200 is not transferred.
  • the program is changed based on the placement information on the L/L, but is not limited thereto. It may be configured that the program is changed by determining the presence or absence of the wafer 200 right before the wafer 200 is transferred to each chamber 100 using a substrate detector 1401 provided in the vacuum transfer chamber 1400 . Also, it is confirmed to match with the placement information on the L/L by determining the presence or absence of the wafer 200 using the substrate detector 1401 provided in the vacuum transfer chamber 1400 . In a case of matching, the transfer processing is continued and in a case of un-matching, the transfer processing ends and it may be configured to notify either the I/O device 261 or the network 263 or both thereof of the information on the abnormal state.
  • a process in which the wafer 200 , in which the first substrate processing process (S 200 A) and the second substrate processing process (S 200 B) end, is sequentially transferred from the process module 110 to the pod 1001 is performed.
  • Whether an unprocessed wafer 200 is stored in the pod 1001 or not is determined.
  • the substrate transfer process (T 102 ) is performed, and when the unprocessed wafer 200 is not stored in the pod 1001 , the substrate processing process ends.
  • the substrate processing apparatus illustrated in FIG. 4 may be configured as that illustrated in FIG. 12 .
  • flash tanks 301 a and 301 b are provided in the first gas supply pipes 111 a and 111 b, respectively, and RPUs 124 a and 124 b are provided in the second gas supply pipes 121 a and 121 b, respectively.
  • valves 311 a, 311 b, 312 a and 312 b are provided in the downstream side of the flash tanks 301 a and 301 b and the RPUs 124 a and 124 b, respectively.
  • a high flow rate of the process gas or the reactive gas having more higher activity may be supplied into each chamber and the processing quality to the wafer 200 may be improved.
  • flash tanks 302 a, 302 b, 303 a and 303 b and valves 313 a, 313 b, 314 a and 314 b may be provided in the fourth purge gas supply pipes 141 a, 141 b, 151 a and 151 b, respectively.
  • a high flow rate of the purge gas may be supplied into each chamber in the third purge process (S 403 ) or the fourth purge process (S 404 ).
  • the method of forming the film in which the source gas and the reactive gas are alternately supplied other methods may be applied when an amount of vapor phase reaction or an amount of by-products of the source gas and the reactive gas is within an acceptable range. For example, there is a method of overlapping the supply times of the source gas and the reactive gas.
  • the process module having a pair of two chambers is described above, but is not limited thereto.
  • a process module having a pair of three or more chambers may be used.
  • the process module has three or more chambers, when the substrate is transferred to one chamber and is not transferred to at least one chamber other than the one chamber, the process gas is supplied to the one chamber and the inert gas is supplied to the other chambers and thus, the above-described effects may be obtained.
  • the single wafer apparatus in which the substrate is processed one by one is described above, but is not limited thereto.
  • a batch-type apparatus in which a plurality of substrates are disposed in the process chamber in a vertical direction or a horizontal direction may be used.
  • the technique of the present invention may be applied to an apparatus in which any gas supply system is shared by a plurality of process chambers. Also, as the volume of the process chamber is large, the effect of improvement of the usage efficiency of the gas by applying the technique of the present invention is increased.
  • the film forming process is described above, it may be applied to other processes.
  • the other processes include a diffusion processing, an oxidation processing, a nitridation processing, an oxynitridation processing, a reduction processing, an oxidation-reduction processing, an etching processing, a heat processing or the like.
  • the present invention may also be applied when a plasma oxidation processing or a plasma nitriding processing is performed on a substrate surface or a film formed on the substrate using only the reactive gas.
  • the present invention may be applied when a plasma annealing processing is performed using only the reactive gas.
  • the embodiments of the present invention may be applied to other processes in addition to the process of manufacturing the semiconductor device.
  • the other processes include a process of manufacturing a liquid crystal device (LCD), a process of manufacturing solar cells, a process of manufacturing a light-emitting device (LED), a substrate processing process such as a process of processing a glass substrate, a process of processing a ceramic substrate, a process of processing a conductive substrate or the like.
  • LCD liquid crystal device
  • LED light-emitting device
  • substrate processing process such as a process of processing a glass substrate, a process of processing a ceramic substrate, a process of processing a conductive substrate or the like.
  • the present invention may be applied to other methods of forming the film using other gases.
  • the other films include an oxygen-containing film, a nitrogen-containing film, a carbon-containing film, a boron-containing film, a metal-containing film or a film containing a plurality of these elements.
  • the other films include, for example, an SiN film, an AlO film, a ZrO film, a HfO film, a HfAlO film, a ZrAlO film, an SiC film, an SiCN film, an SiBN film, a TiN film, a TiC film, a TiAlC film or the like.
  • the productivity of a processing apparatus including a plurality of process chambers can be improved.
  • a substrate processing apparatus including:
  • At least two process chambers including a first process chamber and a second process chamber where substrates are processed
  • a process gas supply unit configured to supply a process gas into the first process chamber and the second process chamber
  • a purge gas supply unit configured to supply a purge gas into the first process chamber and the second process chamber
  • an exhaust unit configured to exhaust at least one of the first process chamber and the second process chamber
  • control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into the first process chamber to which a substrate is transferred while supplying the purge gas into the second process chamber and exhausting the first process chamber and the second process chamber.
  • control unit is further configured to control the process gas supply unit and the purge gas supply unit in a manner that a flow rate of the purge gas is equal to a flow rate of the process gas.
  • any one of Supplementary notes 1 and 2 preferably, further includes a reactive gas supply unit configured to supply a reactive gas into the first process chamber and the second process chamber, and the control unit is further configured to control the process gas supply unit, the purge gas supply unit and the reactive gas supply unit to supply the process gas and the reactive gas sequentially into the first process chamber while supplying the purge gas into the second process chamber.
  • a reactive gas supply unit configured to supply a reactive gas into the first process chamber and the second process chamber
  • the control unit is further configured to control the process gas supply unit, the purge gas supply unit and the reactive gas supply unit to supply the process gas and the reactive gas sequentially into the first process chamber while supplying the purge gas into the second process chamber.
  • the substrate processing apparatus of any one of Supplementary notes 1 through 3 preferably, further includes a second purge gas supply unit configured to supply the purge gas into exhaust pipes connected to the first process chamber and the second process chamber, and the control unit is further configured to control the process gas supply unit and the second purge gas supply unit to supply the process gas into the first process chamber while supplying the purge gas into the exhaust pipe connected to the second process chamber.
  • a second purge gas supply unit configured to supply the purge gas into exhaust pipes connected to the first process chamber and the second process chamber
  • the control unit is further configured to control the process gas supply unit and the second purge gas supply unit to supply the process gas into the first process chamber while supplying the purge gas into the exhaust pipe connected to the second process chamber.
  • the substrate processing apparatus of any one of Supplementary notes 1 through 4 preferably, further includes a conductance adjusting unit configured to adjust conductances of exhaust pipes connected to the first process chamber and the second process chamber, and the control unit is further configured to control the conductance adjusting unit to adjust the conductances of the exhaust pipes in a manner that an inner pressure of the first process chamber is equal to that of the second process chamber.
  • a method of manufacturing a semiconductor device or a substrate processing method including:
  • a flow rate of the purge gas is equal to a flow rate of the process gas in (b).
  • Supplementary notes 6 and 7 further includes:
  • the purge gas is supplied to an exhaust pipe connected to the second process chamber in (b).
  • a program or a non-transitory computer-readable recording medium storing a program for causing a computer to control a substrate processing apparatus to perform:
  • a substrate processing apparatus including:
  • At least two process chambers including a first process chamber and a second process chamber where substrates are processed
  • a process gas supply unit configured to supply a process gas into the first process chamber and the second process chamber
  • a purge gas supply unit configured to supply a purge gas into the first process chamber and the second process chamber
  • an exhaust unit configured to exhaust at least one of the first process chamber and the second process chamber
  • a load lock chamber installed between the stage and the at least two process chambers
  • a first transfer robot configured to transfer the substrates between the stage and the load lock chamber
  • a second transfer robot including a fork portion capable of supporting at least two substrates and configured to transfer the substrates between the load lock chamber and the at least two process chambers;
  • control unit configured to control the process gas supply unit, the purge gas supply unit, the exhaust unit, the first transfer robot and the second transfer robot to perform a first substrate process in the first process chamber to which a substrate is transferred while performing a second substrate process in the second process chamber.
  • the substrate processing apparatus of Supplementary note 12 preferably, further includes a reactive gas supply unit configured to supply a reactive gas into the first process chamber and the second process chamber, and the control unit is further configured to control the process gas supply unit, the purge gas supply unit and the reactive gas supply unit to supply the process gas, the purge gas and the reactive gas into the first process chamber sequentially a predetermined number of times in the first substrate process, to supply the purge gas into the second process chamber in the second substrate process while supplying the process gas in the first substrate process and to supply the purge gas into the second process chamber in the second substrate process while supplying the reactive gas in the first substrate process.
  • a reactive gas supply unit configured to supply a reactive gas into the first process chamber and the second process chamber
  • the control unit is further configured to control the process gas supply unit, the purge gas supply unit and the reactive gas supply unit to supply the process gas, the purge gas and the reactive gas into the first process chamber sequentially a predetermined number of times in the first substrate process, to supply the purge gas into the second process chamber in
  • control unit is further configured to control the process gas supply unit, the purge gas supply unit and the reactive gas supply unit in a manner that a flow rate of the purge gas supplied in the second substrate process while supplying the process gas in the first substrate process is equal to a flow rate of the process gas in the first substrate process and a flow rate of the purge gas supplied in the second substrate process while supplying the reactive gas in the first substrate process is equal to a flow rate of the reactive gas in the first substrate process.
  • any one of Supplementary notes 12 through 14 preferably, further includes a second purge gas supply unit configured to supply the purge gas into exhaust pipes connected to the first process chamber and the second process chamber, and the control unit is further configured to control the process gas supply unit, the reactive gas supply unit and the second purge gas supply unit to supply the purge gas into the exhaust pipe connected to the second process chamber while supplying the process gas and the reactive gas into the first process chamber in the first substrate process.
  • a second purge gas supply unit configured to supply the purge gas into exhaust pipes connected to the first process chamber and the second process chamber
  • the control unit is further configured to control the process gas supply unit, the reactive gas supply unit and the second purge gas supply unit to supply the purge gas into the exhaust pipe connected to the second process chamber while supplying the process gas and the reactive gas into the first process chamber in the first substrate process.
  • any one of Supplementary notes 12 through 15 preferably, further includes a conductance adjusting unit configured to adjust conductances of exhaust pipes connected to the first process chamber and the second process chamber, and the control unit is further configured to control the conductance adjusting unit to adjust the conductances of the exhaust pipes in a manner that an inner pressure of the first process chamber is equal to that of the second process chamber while performing the first substrate process.
  • a substrate processing apparatus including:
  • At least two process chambers including a first process chamber and a second process chamber where substrates are processed
  • a process gas supply unit configured to supply a process gas into the first process chamber and the second process chamber
  • a reactive gas supply unit configured to supply a reactive gas into the first process chamber and the second process chamber
  • a purge gas supply unit configured to supply a purge gas into the first process chamber and the second process chamber
  • an exhaust unit configured to exhaust at least one of the first process chamber and the second process chamber
  • a load lock chamber installed between the stage and the at least two process chambers
  • a first transfer robot configured to transfer the substrates between the stage and the load lock chamber
  • a second transfer robot including a fork portion capable of supporting at least two substrates and configured to transfer the substrates between the load lock chamber and the at least two process chambers;
  • control unit configured to control the process gas supply unit, the reactive gas supply unit, the purge gas supply unit, the exhaust unit, the first transfer robot and the second transfer robot to perform:
  • control unit is further configured to control the process gas supply unit, the reactive gas supply unit and the purge gas supply unit in a manner that the process gas and the reactive gas are supplied alternately in the first substrate process, the purge gas is supplied in the second substrate process while supplying the process gas in the first substrate process and the purge gas is supplied in the second substrate process while supplying the reactive gas in the first substrate process.
  • control unit is further configured to control the process gas supply unit, the reactive gas supply unit and the purge gas supply unit in a manner that a flow rate of the purge gas supplied in the second substrate process while supplying the process gas in the first substrate process is equal to a flow rate of the process gas in the first substrate process and a flow rate of the purge gas supplied in the second substrate process while supplying the reactive gas in the first substrate process is equal to a flow rate of the reactive gas in the first substrate process.
  • the substrate processing apparatus of any one of Supplementary notes 17 through 19 further includes a second purge gas supply unit configured to supply the purge gas into exhaust pipes connected to the first process chamber and the second process chamber, and the control unit is further configured to control the process gas supply unit, the reactive gas supply unit and the second purge gas supply unit to supply the purge gas into the exhaust pipes in the second substrate process while supplying the process gas and the purge gas in the first substrate process.
  • a second purge gas supply unit configured to supply the purge gas into exhaust pipes connected to the first process chamber and the second process chamber
  • the control unit is further configured to control the process gas supply unit, the reactive gas supply unit and the second purge gas supply unit to supply the purge gas into the exhaust pipes in the second substrate process while supplying the process gas and the purge gas in the first substrate process.
  • any one of Supplementary notes 17 through 20 preferably, further includes a conductance adjusting unit configured to adjust conductances of exhaust pipes connected to the first process chamber and the second process chamber, and the control unit is further configured to control the conductance adjusting unit to adjust the conductances of the exhaust pipes in a manner that an inner pressure of the first process chamber is equal to that of the second process chamber while performing the first substrate process and the second substrate process.
  • a substrate processing apparatus or an apparatus of manufacturing a semiconductor device including:
  • a process gas supply unit configured to supply a process gas into each of the plurality of process chambers
  • a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers
  • an exhaust unit configured to exhaust each of the plurality of process chambers
  • control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.
  • a method of manufacturing a semiconductor device or a substrate processing method including:
  • a program or a non-transitory computer-readable recording medium storing a program for causing a computer to control a substrate processing apparatus to perform:

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180274615A1 (en) * 2017-03-27 2018-09-27 Goodrich Corporation Common vacuum header for cvi/cvd furnaces
US10428426B2 (en) * 2016-04-22 2019-10-01 Applied Materials, Inc. Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime
US20190376186A1 (en) * 2010-03-25 2019-12-12 Novellus Systems, Inc. Pecvd apparatus for in-situ deposition of film stacks
CN110858557A (zh) * 2018-08-23 2020-03-03 细美事有限公司 缓冲单元以及用该缓冲单元处理基板的装置和方法
CN111463145A (zh) * 2019-01-22 2020-07-28 Asm Ip私人控股有限公司 基板处理装置
US20210102292A1 (en) * 2019-10-08 2021-04-08 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US20220090264A1 (en) * 2020-09-23 2022-03-24 Kokusai Electric Corporation Substrate processing apparatus
US11322370B1 (en) 2021-07-09 2022-05-03 Kokusai Electric Corporation Method of manufacturing semiconductor device
US20220230897A1 (en) * 2021-01-20 2022-07-21 Kokusai Electric Corporation Substrate processing apparatus
US20220238354A1 (en) * 2019-06-19 2022-07-28 Edwards Vacuum Llc Multiple vacuum chamber exhaust system and method of evacuating multiple chambers
EP4152368A1 (en) * 2021-09-21 2023-03-22 Kokusai Electric Corp. Substrate processing apparatus, method of manufacturing semiconductor device, and program

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6270952B1 (ja) 2016-09-28 2018-01-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体。
JP6781031B2 (ja) * 2016-12-08 2020-11-04 東京エレクトロン株式会社 基板処理方法及び熱処理装置
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
US11629406B2 (en) * 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
JP7209503B2 (ja) * 2018-09-21 2023-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN110459496B (zh) * 2019-08-27 2021-12-07 上海华力集成电路制造有限公司 激光退火机台的晶圆传送装置及其操作方法
US11543450B2 (en) * 2019-12-24 2023-01-03 SK Hynix Inc. System and method of testing a semiconductor device
JP7191910B2 (ja) * 2020-09-24 2022-12-19 株式会社Kokusai Electric 基板処理システム、半導体装置の製造方法及びプログラム
JP7525230B2 (ja) 2020-10-21 2024-07-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7344944B2 (ja) 2021-09-24 2023-09-14 株式会社Kokusai Electric ガス供給システム、基板処理装置、半導体装置の製造方法及びプログラム
JPWO2023188465A1 (ja) 2022-03-29 2023-10-05

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799162A (ja) * 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
AU2001277755A1 (en) * 2000-08-11 2002-02-25 Tokyo Electron Limited Device and method for processing substrate
JP2003049278A (ja) * 2001-08-06 2003-02-21 Canon Inc 真空処理方法及び真空処理装置
KR200264228Y1 (ko) * 2001-11-29 2002-02-19 아남반도체 주식회사 급속 열처리장치의 공정 챔버
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US20030213560A1 (en) * 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
JP2004091850A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
JP2004153104A (ja) * 2002-10-31 2004-05-27 Canon Inc 真空処理方法
JP4931381B2 (ja) * 2005-02-08 2012-05-16 東京エレクトロン株式会社 基板処理装置，基板処理装置の制御方法，プログラム
US20060176928A1 (en) 2005-02-08 2006-08-10 Tokyo Electron Limited Substrate processing apparatus, control method adopted in substrate processing apparatus and program
CN100397569C (zh) * 2005-02-08 2008-06-25 东京毅力科创株式会社 基板处理装置、基板处理装置的控制方法
JP5046506B2 (ja) * 2005-10-19 2012-10-10 東京エレクトロン株式会社 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
JP5095242B2 (ja) 2007-03-08 2012-12-12 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2008098670A (ja) * 2007-12-21 2008-04-24 Hitachi Kokusai Electric Inc 半導体製造装置の障害対処システム
US20110265884A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system with shared vacuum pump
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8721798B2 (en) * 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
JP5666888B2 (ja) * 2010-11-25 2015-02-12 東京エレクトロン株式会社 プラズマ処理装置及び処理システム
JP2012164736A (ja) 2011-02-04 2012-08-30 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US20120244685A1 (en) * 2011-03-24 2012-09-27 Nuflare Technology, Inc. Manufacturing Apparatus and Method for Semiconductor Device
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
JP2013161898A (ja) * 2012-02-03 2013-08-19 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法及び基板処理方法
US8911826B2 (en) * 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
JP6105436B2 (ja) * 2013-08-09 2017-03-29 東京エレクトロン株式会社 基板処理システム
JP5807084B2 (ja) * 2013-09-30 2015-11-10 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP5859586B2 (ja) * 2013-12-27 2016-02-10 株式会社日立国際電気 基板処理システム、半導体装置の製造方法および記録媒体
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers

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US11746420B2 (en) * 2010-03-25 2023-09-05 Novellus Systems, Inc. PECVD apparatus for in-situ deposition of film stacks
US20190376186A1 (en) * 2010-03-25 2019-12-12 Novellus Systems, Inc. Pecvd apparatus for in-situ deposition of film stacks
US10428426B2 (en) * 2016-04-22 2019-10-01 Applied Materials, Inc. Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime
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US11728183B2 (en) 2021-07-09 2023-08-15 Kokusai Electric Corporation Method of manufacturing semiconductor device
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