US20160130712A1 - Electroplating solution for tin or tin alloy, and use for same - Google Patents

Electroplating solution for tin or tin alloy, and use for same Download PDF

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Publication number
US20160130712A1
US20160130712A1 US14/898,288 US201414898288A US2016130712A1 US 20160130712 A1 US20160130712 A1 US 20160130712A1 US 201414898288 A US201414898288 A US 201414898288A US 2016130712 A1 US2016130712 A1 US 2016130712A1
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Prior art keywords
tin
electroplating
blind via
hole
filling
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Abandoned
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US14/898,288
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English (en)
Inventor
Masao Hori
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JCU Corp
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JCU Corp
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Assigned to JCU CORPORATION reassignment JCU CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HORI, MASAO
Publication of US20160130712A1 publication Critical patent/US20160130712A1/en
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/421—Blind plated via connections

Definitions

  • the present invention relates to an electroplating solution for tin or tin alloy and a method for filling a blind via or a through-hole using the same, and a method for manufacturing an electronic circuit board.
  • copper plating has been used in three-dimensional packaging of semiconductor or a filling process of a blind via or a through-hole in a printed wiring board, and a solder ball or a tin alloy has been used in a packaging process.
  • the present invention is concerned with an electroplating solution for tin or tin alloy containing the following components (a) and (b):
  • a content of the component (a) being 1.3 g/L or more, and a content of the component (b) being 0.3 g/L or more.
  • the present invention is concerned with a plating filling method of a blind via or a through-hole including subjecting a material having a blind via or a through-hole to electroplating with the above-described electroplating solution for tin or tin alloy.
  • the present invention is concerned with a method for manufacturing an electronic circuit board including a process of subjecting a board having a blind via or a through-hole to plating filling, the method including carrying out the plating filling by the above-described plating filling method of a blind via or a through-hole.
  • the blind via or through-hole can be highly reliably filled in a short time.
  • the electroplating solution for tin or tin alloy of the present invention can be utilized for three-dimensional packaging of semiconductor or a filling process of a blind via or a through-hole in a printed wiring board, or the formation of a through-silicon via.
  • FIG. 1 shows a photograph of a cross section of a board after electroplating in Example 2 ((a) shows a board electroplated with an electroplating solution of Comparative Product 1 at 0.075 A/dm 2 for 15 minutes, and (b) shows a board electroplated with an electroplating solution of Example Product 1 at 0.075 A/dm 2 for 20 minutes).
  • FIG. 2 shows a photograph of a cross section of a board after electroplating in Example 3 ((a) to (d) show boards electroplated with an electroplating solution of Comparative Product 2 at 0.05 A/dm 2 after a lapse of 15 minutes, 30 minutes, 60 minutes, and 90 minutes, respectively).
  • FIG. 3 shows a photograph of a cross section of a board after electroplating in Example 3 ((a) to (e) show boards electroplated with an electroplating solution of Example Product 1 at 0.05 A/dm 2 after a lapse of 15 minutes, 30 minutes, 60 minutes, 90 minutes, and 120 minutes, respectively).
  • FIG. 4 shows a photograph of a cross section of a board after electroplating in Example 6 ((a) to (c) show boards electroplated with an electroplating solution of Example Product 2 at 1 .5 A/dm 2 after a lapse of 15 minutes, 25 minutes, and 35 minutes, respectively).
  • the carboxyl group-containing compound as the component (a) to be contained in the electroplating solution for tin or tin alloy of the present invention is not particularly limited so long as it is a compound having a carboxyl group; however, examples thereof include methacrylic acid, acrylic acid, crotonic acid, propylene-1,2-dicarboxylic acid, ethacrylic acid, methyl acrylate, methyl methacrylate, and the like. Of these, methacrylic acid and acrylic acid are preferred. In addition, these carboxyl group-containing compounds can be used singly or in combination of two kinds thereof.
  • a content of the carboxyl group-containing compound as the component (a) in the plating solution of the present invention is 1.3 g/L or more, and preferably 1.3 to 2.5 g/L.
  • the carbonyl group-containing compound as the component (b) to be contained in the plating solution of the present invention is not particularly limited so long as it is a compound having a carbonyl group; however, examples thereof include benzalacetone, naphthaldehyde, chlorobenzaldehyde, phthalaldehyde, salicylaldehyde, chloronaphthaldehyde, methoxybenzaldehyde, vanillin, and the like. Of these, benzalacetone, naphthaldehyde, and chlorobenzaldehyde are preferred. In addition, these carbonyl group-containing compounds can be used singly or in combination of two kinds thereof.
  • the carbonyl group-containing compound is contained in the plating solution of the present invention, preferably with a solvent, such as methanol, isopropyl alcohol, and the like.
  • a content of the carbonyl group-containing compound as the component (b) in the plating solution of the present invention is 0.3 g/L or more, and preferably 0.3 to 1.0 g/L.
  • a molar ratio of the component (a) to the component (b) is not particularly limited, it is preferably 10 or less, and more preferably 2 to 9.
  • the conventionally known electroplating solution for tin or tin alloy serving as a base of the plating solution of the present invention is not particularly limited.
  • examples thereof include those containing a tin ion; a metal ion for alloys, such as a silver ion, a gold ion, a copper ion, a lead ion, an antimony ion, an indium ion, a bismuth ion, and the like; and an acid capable of rendering a bath acidic and stabilizing it, such as sulfuric acid, methanesulfonic acid, fluoroboric acid, phenolsulfonic acid, sulfamic acid, pyrophosphoric acid, and the like.
  • Examples of a more specific electroplating bath for tin or tin alloy include a sulfuric acid bath, a methanesulfonic acid bath, a fluoroboric acid bath, and the like. Of these, a sulfuric acid bath and a methanesulfonic acid bath are preferred.
  • a known nonionic, cationic, or anionic surfactant, an antioxidant, such as catechol, resorcinol, catecholsulfonic acid, etc., and the like may be further added to the conventionally known electroplating solution for tin or tin alloy.
  • Methanesulfonic acid 10 to 180 g/L, preferably 15 to 120 g/L
  • Polyoxyethylene laurylamine 0.1 to 8 g/L, preferably 3 to 6 g/L
  • Catechol 0.1 to 5 g/L, preferably 0.5 to 2 g/L
  • Methacrylic acid 0.2 to 4 g/L, preferably 1.3 to 2.5 g/L
  • 1-Naphthaldehyde 0.05 to 1.5 g/L, preferably 0.3 to 1.0 g/L
  • Methanol 0.7 to 25 g/L, preferably 3.5 to 17 g/L
  • Lead methanesulfonate (as lead): 0.1 to 50 g/L, preferably 1 to 30 g/L
  • Methanesulfonic acid 10 to 180 g/L, preferably 15 to 120 g/L
  • Polyoxyethylene laurylamine 0.1 to 8 g/L, preferably 3 to 6 g/L
  • Catechol 0.1 to 5 g/L, preferably 0.5 to 2 g/L
  • Methacrylic acid 0.2 to 4 g/L, preferably 1.3 to 2.5 g/L
  • 1-Naphthaldehyde 0.05 to 1.5 g/L, preferably 0.3 to 1.0 g/L
  • Methanol 0.7 to 25 g/L, preferably 3.5 to 17 g/L
  • the plating solution of the present invention is able to undergo electroplating on a material to be plated by a conventionally known method.
  • the method of the electroplating with the plating solution of the present invention is not particularly limited.
  • the material to be plated is subjected to a pretreatment, such as alkaline degreasing, a hydrophilization treatment, acid activation, etc., and the resultant is dipped in the plating solution of the present invention.
  • Conditions of the electroplating with the plating solution of the present invention is not particularly limited, and usual conditions for electroplating of tin or a tin alloy may be adopted.
  • the electroplating may be performed by using tin as an anode at a bath temperature of 10 to 40° C. at a cathode electrode current density of 0.2 to 3 A/dm 2 .
  • the material to be plated which can be subjected to electroplating with the plating solution of the present invention, is not particularly limited. Examples thereof include those having a surface made of a metal, such as copper, nickel, brass, etc., a resin, such as ABS, a polyimide, an epoxy resin, etc., or the like.
  • the plating solution of the present invention can be applied to electroplating on the above-described usual material to be plated. Nevertheless, it is particularly preferred to use the plating solution of the present invention for subjecting a material having a blind via or a through-hole to electroplating, thereby filling the blind via or through-hole with tin or a tin alloy.
  • a molar ratio of the component (a) to the component (b) in the plating solution of the present invention is set to 10 or less, and preferably 2 to 9.
  • a molar ratio of the component (a) to the component (b) in the plating solution of the present invention is set to 10 or less, and preferably 3.5 to 10.
  • conditions of the electroplating are not particularly limited.
  • the electroplating may be performed by using tin as an anode at a bath temperature of 10 to 40° C. at a cathode electrode current density of 0.01 to 2.5 A/dm 2 .
  • the current density during the electroplating may be made relatively higher than that at the start of electroplating.
  • a method of making the current density during the electroplating relatively higher than that at the start of electroplating is not particularly limited.
  • the current density during the electroplating may be increased in a stepwise fashion after a lapse of a prescribed time from the start of electroplating, or in a linear fashion from the start of electroplating.
  • the plating solution of the present invention capable of filling a blind via or a through-hole with tin or a tin alloy as described above can be utilized for a filling process including a process of performing plating filling on a board having a blind via or a through-hole, for example, three-dimensional packaging of semiconductor or a filling process of a via or a through-hole in a printed wiring board, and a method for manufacturing an electronic circuit board, such as the formation of a through-silicon via, etc.
  • An electroplating solution for tin having the following composition was prepared by mixing Components 1 to 5 and 7 and then mixing Component 6.
  • a silicon wafer board having a blind via whose aspect ratio is 6 (10 ⁇ 60D) was washed with water and subjected to a pretreatment.
  • the pretreated board was dipped in each of the electroplating solutions for tin as prepared in Example 1 (Comparative Product 1 and Example Product 1) for one minute and subjected to electroplating at a current density of 0.075 A/dm 2 for a prescribed time (15 minutes for Comparative Product 1 and 20 minutes for Example Product 1) .
  • a filled state of the via was observed from a cross section of the board after electroplating ( FIG. 1 ).
  • Comparative Product 1 deposition was not confirmed and a void was observed in the via bottom portion, whereas in Example Product 1, preferential deposition from the via bottom portion was confirmed.
  • Example Product 1 and Comparative Product 2 After pretreatment of the same board as that used in Example 2, the resulting board was dipped in each of the electroplating solutions for tin as prepared in Example 1 (Example Product 1 and Comparative Product 2) and subjected to electroplating at a current density of 0.05 A/dm 2 for a prescribed time (15 minutes, 30 minutes, 60 minutes, 90 minutes, and 120 minutes (only in Example Product 1), respectively). A filled state of the via was observed from a cross section of the board after electroplating ( FIGS. 2 and 3 ).
  • Example Product 2 filling within the via did not proceed even after plating for 90 minutes, whereas in Example Product 1, the deposition amount increased with a lapse of the plating time and the filling could be achieved to an extent of almost 100% in plating for 120 minutes.
  • Example Product 1 After pretreatment of the same board as that used in Example 2, the resulting board was dipped in the electroplating solution for tin as prepared in Example 1 (Example Product 1) and subjected to electroplating first at a current density of 0.075 A/dm 2 for 20 minutes, then at 0.15 A/dm 2 for 10 minutes, and finally at 0.3 A/dm 2 for 10 minutes.
  • the electroplating achieved complete filling of the blind via in 40 minutes.
  • the filling time of the blind via was shortened by about 65% as compared with the case of setting the current density at a fixed level.
  • An electroplating solution for tin having the following composition was prepared by mixing Components 1 to 5 and 7 and then mixing Component 6.
  • a printed wiring board having a blind via whose aspect ratio is 0.57 (70 ⁇ 40D) was subjected to an alkaline degreasing treatment at 40° C. for one minute and then subjected to a pretreatment by an acid activation treatment at room temperature for 10 seconds.
  • the pretreated board was dipped in the electroplating solution for tin as prepared in Example 5 (Example Product 2) and subjected to electroplating at a current density of 1.5 A/dm 2 for a prescribed time (15 minutes, 25 minutes, and 35 minutes, respectively) .
  • a filled state of the via was observed from a cross section of the board after electroplating ( FIG. 4 ).
  • Deposition from the bottom portion of the via was confirmed after the start of plating; the inside of the via was substantially filled in 25 minutes; and complete filling of the via and deposition on the surface were confirmed in 35 minutes. In addition, it was also confirmed that a thickness of the deposited film on the surface after filling the via can be arbitrarily controlled.
  • An electroplating solution for tin having the following composition was prepared by mixing Components 1 to 5 and 8 and then mixing Component 6 or 7.
  • Example Product 3 Example Product 4
  • Example Product 4 Example Product 4
  • the via was completely filled in 100 minutes.
  • the via was completely filled in 110 minutes.
  • An electroplating solution for tin alloy having the following composition was prepared by mixing Components 1 to 6 and 8 and then mixing Component 7.
  • Example Product 5 After pretreatment of the same board as that used in Example 6, the resulting board was dipped in the electroplating solution for tin alloy as prepared in Example 9 (Example Product 5) and subjected to electroplating at a current density of 1.5 A/dm 2 for 30 minutes.
  • the electroplating achieved complete filling of the blind via.
  • a blind via or a through-hole can be filled with tin or a tin alloy.
  • the present invention can be utilized for three-dimensional packaging of semiconductor or a filling process of a blind via or a through-hole in a printed wiring board, or the formation of a through-silicon via.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
US14/898,288 2013-06-26 2014-05-08 Electroplating solution for tin or tin alloy, and use for same Abandoned US20160130712A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013133292A JP6006683B2 (ja) 2013-06-26 2013-06-26 スズまたはスズ合金用電気メッキ液およびその用途
JP2013-133292 2013-06-26
PCT/JP2014/062367 WO2014208204A1 (ja) 2013-06-26 2014-05-08 スズまたはスズ合金用電気メッキ液およびその用途

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US20160130712A1 true US20160130712A1 (en) 2016-05-12

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US (1) US20160130712A1 (ko)
JP (1) JP6006683B2 (ko)
KR (1) KR20160024868A (ko)
CN (1) CN105308218B (ko)
TW (1) TWI625428B (ko)
WO (1) WO2014208204A1 (ko)

Cited By (3)

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US20150308007A1 (en) * 2014-04-28 2015-10-29 Samsung Electronics Co., Ltd. Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution
US11053600B2 (en) * 2018-03-20 2021-07-06 Mitsubishi Materials Corporation Tin or tin alloy plating solution and bump forming method
US11939691B2 (en) 2016-06-13 2024-03-26 Ishihara Chemical Co., Ltd. Tin or tin alloy electroplating bath, and electronic component having electrodeposit formed thereon using the plating bath

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CN105755513A (zh) * 2016-04-28 2016-07-13 四川昊吉科技有限公司 一种镀锡防腐剂
KR20180024765A (ko) * 2016-08-31 2018-03-08 주식회사 호진플라텍 전기도금을 이용한 주석-비스무트-납 삼원합금 솔더 조성물
JP6620858B2 (ja) 2017-10-24 2019-12-18 三菱マテリアル株式会社 錫又は錫合金めっき堆積層の形成方法
US11268203B2 (en) 2017-10-24 2022-03-08 Mitsubishi Materials Corporation Tin or tin alloy plating solution
JP6620859B2 (ja) 2017-10-24 2019-12-18 三菱マテリアル株式会社 錫又は錫合金めっき堆積層の形成方法
WO2019082884A1 (ja) 2017-10-24 2019-05-02 三菱マテリアル株式会社 錫又は錫合金めっき液
TWI754135B (zh) 2018-03-20 2022-02-01 日商三菱綜合材料股份有限公司 錫或錫合金的鍍敷液、凸塊的形成方法、電路基板的製造方法
WO2021153160A1 (ja) 2020-01-27 2021-08-05 三菱マテリアル株式会社 錫又は錫合金電解めっき液、バンプの形成方法、及び回路基板の製造方法

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JP4547583B2 (ja) * 1999-09-24 2010-09-22 石原薬品株式会社 スズ合金メッキを施した表面被覆材料、並びに当該被覆材料を利用した電子部品
JP5574912B2 (ja) * 2010-10-22 2014-08-20 ローム・アンド・ハース電子材料株式会社 スズめっき液

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CN105308218A (zh) 2016-02-03
JP2015007276A (ja) 2015-01-15
TWI625428B (zh) 2018-06-01
CN105308218B (zh) 2018-07-13
KR20160024868A (ko) 2016-03-07
TW201510295A (zh) 2015-03-16
JP6006683B2 (ja) 2016-10-12

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