Classifications

• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/50—Solvents
  • C11D7/5004—Organic solvents
  • C11D7/5013—Organic solvents containing nitrogen
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/32—Organic compounds containing nitrogen
  • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2003—Alcohols; Phenols
  • C11D3/2006—Monohydric alcohols
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B08—CLEANING
  • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
  • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
  • B08B3/04—Cleaning involving contact with liquid
  • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2003—Alcohols; Phenols
  • C11D3/2006—Monohydric alcohols
  • C11D3/201—Monohydric alcohols linear
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2003—Alcohols; Phenols
  • C11D3/2041—Dihydric alcohols
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2003—Alcohols; Phenols
  • C11D3/2041—Dihydric alcohols
  • C11D3/2044—Dihydric alcohols linear
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2068—Ethers
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/26—Organic compounds containing nitrogen
  • C11D3/30—Amines; Substituted amines ; Quaternized amines
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/50—Solvents
  • C11D7/5004—Organic solvents
  • C11D7/5022—Organic solvents containing oxygen
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02002—Preparing wafers
  • H01L21/02005—Preparing bulk and homogeneous wafers
  • H01L21/02008—Multistep processes
  • H01L21/0201—Specific process step
  • H01L21/02013—Grinding, lapping
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
  • H01L21/02052—Wet cleaning only
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02057—Cleaning during device manufacture
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02057—Cleaning during device manufacture
  • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
  • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/311—Etching the insulating layers by chemical or physical means
  • H01L21/31127—Etching organic layers
  • H01L21/31133—Etching organic layers by chemical means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
  • C11D2111/10—Objects to be cleaned
  • C11D2111/14—Hard surfaces
  • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

• the present invention relates to a substrate detergent composition.
• a 3-dimensional semiconductor-mounting technology is capable of producing a semiconductor obtained by laminating thinned semiconductor chips in a multilayered structure by wire-connecting the same using through silicon vias (TSV).
• TSV through silicon vias
• a system proposed in a substrate-thinning process can be subjected to processes such as a backgrinding process and back side electrodes forming process by bonding a substrate in which a semiconductor circuit is formed on a support substrate such as silicon and glass using an adhesive.
• a support substrate such as silicon and glass
• an adhesive is necessary to readily exfoliate the support substrate after completion of the processes, and thereafter it is necessary to remove an adhesive remaining on a substrate surface in which a semiconductor circuit is formed and to complete cleaning of a thin-film semiconductor substrate surface.
• Patent Document 1 introduction of a detergent composition capable of sufficiently removing a remaining adhesive with a short period of time without corrosion of a substrate surface is strongly desired. Unfortunately, however, it did not lead to development of a detergent composition capable of sufficiently cleaning a surface of a substrate contaminated with a silicone component with a short period of time (Patent Document 1).
• Patent Document 1 Japanese Patent Laid-Open Publication No. 2013-010888
• the present invention was made in view of the above situation, and has an object to provide a substrate detergent composition used for cleaning a surface of a substrate such as a silicon semiconductor substrate, a surface of which is contaminated with e.g. a silicone component whose water contact angle is 100° or more.
• the present invention provides a substrate detergent composition used for cleaning a surface of a substrate, comprising:
• a quaternary ammonium salt 0.1 to 2.0% by mass
• B Water: 0.1 to 0.4% by mass
• C An organic solvent: 94.0 to 99.8% by mass.
• the substrate to be cleaned can be a silicon semiconductor substrate whose water contact angle is 100° or more, generally 100 to 120°.
• a content of silicon atom derived from silicone-based adhesive is generally 10% by mass or more, particularly 20% by mass or more related to the entire elements detected before cleaning taken as 100% by mass.
• a silicon substrate used in the present application can be used for a thin substrate processing step which is used for a package of compact semiconductor used to wire a silicon substrate in which a circuit is formed with e.g. a metal wiring.
• a thinning process can be achieved by attaching a laminated body which forms a polymer adhesive on a support body to a silicon substrate which has normal thickness, and by cutting and polishing a back side of the silicon substrate.
• the support body includes a glass substrate and a silicon substrate.
• an adhesive used for thinning process is not necessary after the process. Therefore, the adhesive is removed by organic solvent, however, particularly a silicone-based adhesive is hard to remove, and the adhesive remains 10% by mass or more on the substrate.
• a detergent composition of the present invention can sufficiently clean a silicon semiconductor substrate surface contaminated with a silicone component whose water contact angle is 100° or more with a short period of time.
• the water contact angle can be determined at less than 100°. Specifically, it is preferable to obtain a substrate whose water contact angle is reduced to 10 to 30°, preferably 10 to 20°. By determining a water contact angle at less than 100°, an effect such as adhesive strength to an encapsulant can be remarkably improved in cases of use for a laminated body of e.g. semiconductor package.
• the quaternary ammonium salt is preferably tetraalkylammonium hydroxide, particularly tetraethylammonium hydroxide.
• the quaternary ammonium salt is preferably a quaternary ammonium hydroxide.
• the organic solvent is an organic solvent containing at least one hydroxyl group in one molecule and contains at least one kind of a saturated aliphatic alcohol having 1 to 8 carbon atoms, a glycol having 2 to 16 carbon atoms and a glycol ether having 4 to 20 carbon atoms.
• the substrate detergent composition of the present invention can contain the above-shown organic solvent.
• a favorable cleaning property can be obtained with a short period of time to achieve efficient cleaning of a silicon semiconductor substrate without corrosion thereof, and a durable substrate used for a semiconductor package without corrosion of a substrate surface can be obtained as a thin silicon semiconductor substrate.
• Inventors of the present invention carried out an extensive investigation to find that a substrate can efficiently be cleaned without corrosion thereof using a detergent composition containing a specific mixture ratio of a quaternary ammonium salt, water and an organic solvent, and the present invention was accomplished.
• the detergent composition of the present invention used for cleaning a surface of a substrate comprises:
• a quaternary ammonium salt 0.1 to 2.0% by mass
• B Water: 0.1 to 0.4% by mass
• C An organic solvent: 94.0 to 99.8% by mass.
• a quaternary ammonium salt capable of fulfilling the objective of the present invention is e.g. a quaternary ammonium hydroxide and a quaternary ammonium chloride.
• Illustrative example thereof includes tetraalkylammonium which contains linear alkyl group having 1 to 5 carbon atoms, trialkylhydroxyalkylammonium hydroxide which contains alkyl group having 1 to 5 carbon atoms or hydroxyalkyl group having 1 to 5 carbon atoms, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), trimethyl(hydroxyethyl)ammonium hydroxide (commonly named as choline), and triethyl(hydroxyethyl)ammonium hydroxide.
• TMAH tetramethylammonium hydrox
• An organic solvent for fulfilling the objective of the present invention is not particularly restricted, but contains at least one hydroxyl group in one molecule.
• Illustrative example thereof includes a saturated aliphatic alcohol having 1 to 8 carbon atoms, preferably having 2 to 7 carbon atoms, and more preferably having 3 to 6 carbon atoms; a glycol having 2 to 16 carbon atoms, preferably having 3 to 14 carbon atoms, and more preferably having 5 to 12 carbon atoms; and a glycol ether having 4 to 20 carbon atoms, 4 to 18 carbon atoms, and 4 to 15 carbon atoms, and one or more solvents can be mixed to use.
• Illustrative example of the saturated aliphatic monohydric alcohol includes methanol, ethanol, n-propyl alcohol, isopropyl alcohol, 1-butanol, 2-butanol, isobutyl alcohol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, 2-methyl-1-butanol, isopentyl alcohol, sec-butyl alcohol, Cert-pentyl alcohol, 3-methyl-2-butanol, neopentyl alcohol, 1-hexanol, 2-methyl-1-pentanol, 4-methyl-2-pentanol, 2-ethyl-1-butanol, 1-heptanol, 2-heptanol, 3-heptanol, 1-octanol, 2-octanol, 2-ethyl-1-hexanol, cyclohexanol, 1-methylcyclohexanol, 2-methylcyclohexano
• glycol includes ethylene glycol, propylene glycol, butylene glycol, hexylene glycol, diethylene glycol, dipropylene glycol, trimethylene glycol, triethylene glycol, tetramethylene glycol, and tetraethylene glycol.
• glycol ether includes ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono n-propyl ether, ethylene glycol mono n-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, and 3-methoxy-3-methyl-1-butanol.
• Preferably used out of the above substances are higher organic solvent having 6 to 12 carbon atom
• components of a detergent composition can be mixed in no specific manner.
• the components may be mixed in an optional order, and 2 or 3 components of a basic detergent composition may be blended beforehand. Then, a remaining component may be mixed, or all the components may be mixed altogether.
• the detergent composition of the present invention is preferably produced so that troubles such as deposition and liquid separation are not caused.
• the concentration of a component (A): a quaternary ammonium salt is 0.1 to 2.0% by mass related to the entire components, preferably 0.2 to 1.5% by mass, and more preferably 0.3 to 1.2% by mass.
• the component (A) if a concentration thereof is under 0.1% by mass, might show an insufficient property of cleaning a thin semiconductor substrate surface. In cases where the concentration exceeds 2.0% by mass, the property of cleaning might not be obtained, resulting in corrosion of a silicon semiconductor substrate.
• the concentration of a component (B): water is 0.1 to 0.4% by mass, preferably 0.1 to 3.0% by mass, and more preferably 0.5 to 2.5% by mass.
• the component (B) if a concentration thereof is under 0.1% by mass, might provide an insufficient property of cleaning a thin semiconductor substrate surface. In cases where the concentration exceeds 4.0% by mass, the property of cleaning might not be obtained, resulting in corrosion of a silicon semiconductor substrate.
• the concentration of a component (C): an organic solvent having at least one hydroxyl group in one molecule is 94.0 to 99.8% by mass, preferably 95.5 to 99.7% by mass, and more preferably 96.3 to 99.6% by mass.
• the component (C) if a concentration thereof is under 94.0% by mass, might fail to dissolve a small amount of an adhesive component, leading to insufficient property of cleaning. In cases where the concentration exceeds 99.8% by mass, the effect of cleaning cannot be obtained.
• the detergent composition can be produced by determining an optimal ratio of concentrations of all the components, and other components can optionally be added.
• the detergent composition of the present invention is not restricted to a silicon semiconductor substrate, but to a germanium substrate, a gallium-arsenic substrate, a gallium-phosphorus substrate, a gallium-arsenic-aluminum substrate, an aluminum-plated silicon substrate, a copper-plated silicon substrate, a silver-plated silicon substrate, a gold-plated silicon substrate, a titanium-plated silicon substrate, a silicon nitride film-forming silicon substrate, a silicon oxide film-forming silicon substrate, a polyimide film-forming silicon substrate, a glass substrate, a quartz substrate, a liquid crystal substrate, and an organic EL substrate.
• the present invention which can clean a substrate having normal thickness is particularly effective to a thin substrate processed and cut whose thickness is preferably 20 to 100 ⁇ m, more preferably 20 to 70 ⁇ m.
• a substrate remaining organic matter such as a silicone resin can be cleaned by immersed in or sprayed with a detergent composition of the present invention, preferably washed and dried for 30 seconds to 30 minutes, more preferably 1 to 10 minutes. Furthermore, in some cases, it may be heated in view of dispersibility.
• the obtained substrate without corrosion further can be performed plating and sputtering treatment, and used for a compact semiconductor package.
• An adhesive layer was formed on an 8-inch silicon semiconductor substrate (200 mm in diameter, thickness: 725 ⁇ m) with a film thickness of 10 ⁇ m by a spin-coating method, using a silicone resin nonane solution adhesive.
• an 8-inch glass substrate (a glass wafer) as a support substrate
• the support substrate and a silicon semiconductor substrate having an adhesive layer were bonded in a vacuum bonding device at 200° C. to produce a laminated body composed of the wafer, the adhesive layer and the support substrate.
• a back side of the silicon semiconductor substrate was ground using a grinder, so that the final thickness of the substrate was 50 ⁇ m.
• the silicon semiconductor substrate in a laminated substrate was horizontally fixed and the support substrate was exfoliated.
• the support substrate was immersed in a nonane solution for 6 minutes, and the adhesive layer was removed and dried to produce a cleaning-test silicon semiconductor substrate.
• a water contact angle of the substrate surface was 108°, and an elemental analysis on the substrate surface by X-ray photoelectron spectroscopy device showed a content of silicon atom was 23%. Note that silicon derived from silicon substrate was excluded from the content of silicon atom.
• a TMAH pentahydrate (4 g), water (1 g) and a 1-butoxy-2-propanol (95 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, agitated at room temperature and the TMAH pentahydrate was dissolved to obtain a detergent composition “A”.
• a 25% TPAH aqueous solution (4 g) and a 1-propoxy-2-propanol (96 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, and uniformly agitated at room temperature to obtain a detergent composition “B”.
• a 37% TBAH methanol solution (2.7 g), water (0.3 g) and a 1-butanol (97 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, and uniformly agitated at room temperature to obtain a detergent composition “C”.
• a 35% TEAH aqueous solution (1.5 g) and a 1-butoxy-2-propanol (98.5 g) were prepared into a 500m1 flask equipped with an agitator, a cooling unit and a thermometer, and uniformly agitated at room temperature to obtain a detergent composition “D”.
• a 35% TEAH aqueous solution (1.5 g), water (0.5 g), a 1-hexanol (49 g) and a 1-butoxy-2-propanol (49 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, and uniformly agitated at room temperature to obtain a detergent composition “E”.
• a 35% TEAH aqueous solution (2.86 g), water (0.14 g), a dipropylene glycol (48.5 g) and a 1-butoxy-2-propanol (48.5 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, and uniformly agitated at room temperature to obtain a detergent composition “F”.
• a 35% TEAH aqueous solution (5.71 g), water (0.09 g), a methanol (47.15 g) and a 1-propoxy-2-propanol (47.15 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, and uniformly agitated at room temperature to obtain a detergent composition “G”.
• a 35% TEAR aqueous solution (0.14 g), water (0.86 g) and a 1-butoxy-2-propanol (99 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, and agitated at room temperature to obtain a detergent composition “H”.
• a TMAH pentahydrate (6 g), water (2 g) and a 1-butoxy-2-propanol (92 g) were prepared into a 500 ml flask equipped with an agitator, a cooling unit and a thermometer, agitated at room temperature, and the TMAH pentahydrate was dissolved to obtain a detergent composition “I”. However, a water layer was separated to obtain no favorable detergent composition.
• a 10% TMAH propylene glycol solution (5 g) and a 1-butoxy-2-propanol (95 g) were prepared into a 500 ml flask equipped with an agitator, and uniformly agitated at room temperature to obtain a detergent composition “K”.
• the silicon semiconductor substrate was cleaned by immersed for 6 minutes using the detergent compositions “A” to “K”.
• Each of the detergent compositions was evaluated as follows. Table 1 shows a ratio of each composition and the results.
• each detergent composition was visually confirmed. In confirmation of such problems as precipitation of deposition and separation of a water layer, each case was evaluated, using symbols “0” (no problem found) and “x” (problem found).
• the silicon semiconductor substrate produced was cleaned using detergent compositions “A” to “H”, “J” and “K”. Specifically, after the silicon semiconductor substrate was immersed in the detergent compositions “A” to “H”, “J” and “K” for a certain period of time, it was washed with pure water for one minute to confirm the water contact angle of a silicon semiconductor substrate surface dried. The water contact angle before cleaning was 108°. In cases where the time required for making the contact angle under 30° was under 6 minutes, the silicon semiconductor substrate surface was evaluated with a symbol of “oo”. In cases where the time required for making the contact angle less than 30° was over 6 minutes and under 10 minutes, the silicon semiconductor substrate surface was evaluated with symbols of “0”. In cases where the time required for making the contact angle under 30° 10 minutes or more, the silicon semiconductor substrate surface was evaluated with symbols of “x”, respectively.
• Measurement device Contact Angle Meter DM-301 manufactured by Kyowa Interface Science Co., LTD.
• a produced silicon semiconductor substrate was cleaned using detergent compositions “A” to “H”, “J” and “K”. Specifically, after the silicon semiconductor substrate was immersed in the detergent compositions “A” to “H”, “J” and “K” for 6 minutes, it was washed-with pure water for one minute to confirm the water contact angle of a silicon semiconductor substrate surface dried using above-mentioned device.
• a produced silicon semiconductor substrate was cleaned using detergent compositions “A” to “H”, “J” and “K”. Specifically, after the silicon semiconductor substrate was immersed in the detergent compositions “A” to “H”, “J” and “K” for 6 minutes, it was washed with pure water for one minute to execute elemental analysis on a silicon semiconductor substrate surface dried using X-ray photoelectron spectroscopy device, and analyze a content of silicon.
• Measurement device AXIS-Ultra DLD manufactured by Kratos Analytical Limited.
• Table 1 shows that in the Examples 1 to 7 that meet requirements of the substrate detergent composition of the present invention, a favorable property of cleaning can be obtained with a short period of time, resulting in no corrosion of a substrate.
• the substrate detergent composition of the present invention can obtain a favorable property of efficiently cleaning a silicon semiconductor substrate with a short period of time without corrosion of a substrate even in a thin substrate.

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• 2014
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