US20140220299A1 - Single-crystal silicon-carbide substrate and polishing solution - Google Patents

Single-crystal silicon-carbide substrate and polishing solution Download PDF

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Publication number
US20140220299A1
US20140220299A1 US14/246,556 US201414246556A US2014220299A1 US 20140220299 A1 US20140220299 A1 US 20140220299A1 US 201414246556 A US201414246556 A US 201414246556A US 2014220299 A1 US2014220299 A1 US 2014220299A1
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Prior art keywords
polishing
atomic step
crystal
polishing solution
atomic
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US14/246,556
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Iori Yoshida
Satoshi Takemiya
Hiroyuki Tomonaga
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AGC Inc
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Asahi Glass Co Ltd
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Assigned to ASAHI GLASS COMPANY, LIMITED reassignment ASAHI GLASS COMPANY, LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKEMIYA, SATOSHI, TOMONAGA, HIROYUKI, YOSHIDA, IORI
Publication of US20140220299A1 publication Critical patent/US20140220299A1/en
Priority to US15/623,540 priority Critical patent/US10138397B2/en
Priority to US15/662,798 priority patent/US10040972B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Definitions

  • the present invention relates to a single-crystal silicon-carbide substrate and a polishing solution, and in more detail, to a single-crystal silicon-carbide substrate suitable for forming a high quality semiconductor layer by epitaxial growth, and a polishing solution for obtaining the substrate.
  • silicon-carbide (SiC) semiconductor has a higher dielectric breakdown field and a larger saturated drift velocity of electron and thermal conductivity than those of a silicon semiconductor
  • SiC silicon-carbide
  • a power device capable of operating in higher speed at a higher temperature than those of the conventional silicon device.
  • an attention has been attracted to the development of a high-efficient switching element used in a power source for driving a motor of a power-assisted bicycle, an electric vehicle, a hybrid car and the like.
  • a single-crystal silicon-carbide substrate having smooth surface for forming a high quality silicon-carbide semiconductor layer by epitaxial growth is necessary.
  • a blue laser diode has attracted an attention as a light source for recording information in high density, and additionally, needs to a white diode as a light source in place of a fluorescent lamp or an electric bulb are increasing.
  • a light-emitting element is prepared using a gallium nitride (GaN) semiconductor, and a single-crystal silicon-carbide substrate is used as a substrate for forming a high quality gallium nitride semiconductor layer.
  • GaN gallium nitride
  • High processing accuracy is required in flatness of a substrate, smoothness of a substrate surface and the like to the single-crystal silicon-carbide substrate used in such use applications. Furthermore, high cleanability is required regarding a residue such as an abrasive or the like derived from a polishing agent.
  • a silicon-carbide single crystal has extremely-high hardness and excellent corrosion resistance, workability in preparing a substrate is poor, and it is difficult to obtain a single-crystal silicon-carbide substrate having high smoothness while maintaining high polishing rate.
  • a smooth surface of a single crystal semiconductor substrate is formed by polishing.
  • the surface thereof is mechanically polished using an abrasive such as diamond or the like that is harder than silicon carbide as an abrasive material to form a smooth surface.
  • an abrasive such as diamond or the like that is harder than silicon carbide as an abrasive material to form a smooth surface.
  • fine scratches according to a particle size of the diamond abrasive are incorporated in the surface of the single-crystal silicon-carbide substrate polished with the diamond abrasive.
  • the smoothness of the surface of the substrate is not sufficient as is.
  • CMP chemical mechanical polishing
  • the formation of a silicon-carbide semiconductor layer on a single-crystal silicon-carbide substrate by epitaxial growth is performed by depositing silicon atoms and carbon atoms by a thermal CVD method on an extremely-smooth surface in atomic level on which an atomic step-and-terrace structure has been formed by the CMP.
  • the front edge of the atomic step becomes the origin of epitaxial growth. Therefore, to obtain a high quality silicon-carbide semiconductor layer free of crystal defect, as surface properties required in a single-crystal silicon-carbide substrate, not only an atomic step-and-terrace structure derived from a crystal structure is formed, but high processing accuracy is required in the shape of the atomic step formed. Particularly, it is necessary in the front edge portion of the atomic step that crystal defect derived from mechanical damage by polishing is suppressed.
  • the “atomic step-and-terrace structure” means a micro step-like structure comprising a plurality of flat “terraces” provided so as to be parallel to each other through step difference along a principal surface of a single crystal substrate and “atomic steps” that are step difference parts connecting the terraces.
  • a linear site at which the upper edge of the atomic step contacts the terrace is defined as a “front edge portion of an atomic step”.
  • the “terrace”, “atomic step” and “front edge portion of an atomic step” are further described hereinafter.
  • step bunching occurs by an oxide formed extremely-near the surface of a substrate after CMP, however, by conducting the etching treatment, only a surface oxide layer generated by CMP can be removed while maintaining high smoothness of the surface of a substrate after CMP and crystal defect such as step bunching can be suppressed.
  • Patent Document 1 Although the formation of an atomic step-and-terrace structure derived from the crystal structure is considered, the influence of the edge shape of an atomic step and the crystal defect, to epitaxial growth of a crystal is not considered at all. Furthermore, merely suppressing the crystal defect of a silicon-carbide semiconductor layer by etching is not sufficient to obtain a high quality semiconductor layer. Further, higher polishing rate is required to be realized from the standpoint of cost.
  • a polishing composition containing a silica adhesive, an oxidizing agent (oxygen donor) such as hydrogen peroxide and vanadate is conventionally proposed as a polishing agent for polishing the surface of a single-crystal silicon-carbide substrate in high polishing rate and smoothly (e.g., see Patent Document 2).
  • Patent Document 1 WO2010-090024
  • Patent Document 2 JP-A-2008-179655
  • the present invention has been made to solve the above problems, and has an object to provide a single-crystal silicon-carbide substrate suitable for epitaxially growing a high quality semiconductor layer free of crystal defect and a polishing solution for obtaining the single-crystal silicon-carbide substrate by CMP.
  • the single-crystal silicon-carbide substrate according to the present invention has a principal surface having an atomic step-and-terrace structure comprising atomic steps and terraces derived from a crystal structure, wherein the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.
  • the principal surface is preferably a surface on which a crystal is to be epitaxially grown to form a silicon-carbide semiconductor layer or a gallium-nitride semiconductor layer.
  • the polishing solution according to the present invention is a polishing solution for chemically and mechanically polishing a principal surface of a predetermined surface direction of a single-crystal silicon-carbide substrate, such that the principal surface has an atomic step-and-terrace structure comprising atomic steps and terraces derived from a crystal structure, and that the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less, in which the polishing solution comprises an oxidizing agent containing a transition metal having oxidation-reduction potential of 0.5V or more, and water, and does not contain an abrasive.
  • the oxidizing agent is preferably permanganate ions.
  • the permanganate ions is contained in an amount of 0.05% by mass or more and 5% by mass or less based on the total amount of a polishing agent.
  • the polishing solution preferably has pH of 11 or less and more preferably 5 or less.
  • the single-crystal silicon-carbide substrate of the present invention has an atomic step-and-terrace structure derived from the crystal structure, wherein the proportion of an average line roughness (R) of a front edge portion of the atomic step to a height (h) of the atomic step is 20% or less. Because crystal defect or the like is suppressed on the front edge portion which is the origin of epitaxial crystal growth in a step flow method, by epitaxially growing on a principal surface of the single-crystal silicon-carbide substrate, a high quality silicon-carbide semiconductor layer or gallium-nitride semiconductor layer can be obtained.
  • the polishing solution of the present invention contains an oxidizing agent containing a transition metal having oxidation-reduction potential of 0.5V or more, and water, and does not contain an abrasive. Therefore, when a principal surface in a predetermined surface direction of the single-crystal silicon-carbide substrate is chemically and mechanically polished by using the polishing solution, high smoothness surface having an atomic step-and-terrace structure derived from the crystal structure and free of crystal defect in the front edge portion of the atomic step due to mechanical damage in polishing can be obtained. Furthermore, the polishing solution does not generate an abrasive residue on the single-crystal silicon-carbide substrate after cleaning.
  • FIGS. 1( a ) and ( b ) schematically show atomic step-and-terrace structure formed on a principal surface in the single-crystal silicon-carbide substrate of an embodiment of the present invention; (a) is a plane view and (b) is an enlarged perspective view.
  • FIG. 2 is a view showing a crystal structure of 4H—SiC single crystal.
  • FIG. 3 is a view showing an example of a polishing apparatus usable in the polishing using the polishing solution of an embodiment of the present invention.
  • FIG. 4 schematically shows an atomic step-and-terrace structure formed on a principal surface in the single-crystal silicon-carbide substrate polished by using the conventional polishing agent solution; (a) is a plane view and (b) is an enlarged perspective view.
  • FIG. 5 is a view schematically showing epitaxial growth by a step flow method on a single-crystal silicon-carbide substrate.
  • FIG. 6 is a view showing measurement position of line roughness of a front edge portion of the atomic step-and-terrace structure formed after CMP polishing in Examples 1 to 6.
  • the single-crystal silicon-carbide substrate of an embodiment of the present invention has a high smoothness principal surface having an atomic step-and-terrace structure in which a flat terrace 1 region and an atomic step 2 of a step difference region, which are derived from a crystal structure, are alternately continued, as schematically shown in FIG. 1( a ) and FIG. 1( b ).
  • a front edge portion 2 a at which the upper edge of the atomic step 2 contacts the terrace 1 shows a straight line state, and is free of curvature, crack and dent.
  • the width of the terrace 1 is nearly the same in all of terraces, and is nearly uniform in each terrace.
  • C axis shown in FIG. 1( b ) is a vertical direction to the paper face in FIG. 1( a ).
  • the proportion of an average line roughness (R) of the front edge portion 2 a of the atomic step 2 to a height (h) of the atomic step 2 is 20% or less. That is, (R/h) ⁇ 100 ⁇ 20.
  • the R/h can be considered as an index showing the degree of mechanical damage to the front edge portion 2 a in the atomic step-and-terrace structure.
  • the principal surface having the atomic step-and-terrace structure is a principal surface in a predetermined surface direction and is a principal surface at a predetermined off angle to the C axis.
  • the average line roughness (R) of the front edge portion 2 a is arithmetical mean roughness (Ra) of the center line of a cross-section roughness curve of the front edge portion 2 a, and can be measured by, for example, the following method.
  • a predetermined range e.g., a range of 2 ⁇ m horizontal ⁇ 1 ⁇ m vertical
  • AFM atomic force microscope
  • the respective arithmetical mean roughnesses (Ra) of a plurality of the front edge portions 2 a fallen within the above range are measured from the obtained AFM image, and R is obtained as their average value.
  • the height (h) of the atomic step is about 0.25 nm in the single-crystal silicon-carbide substrate.
  • a 4H—SiC substrate has the crystal structure shown in FIG. 2 , and is that 1 ⁇ 4 of CO (1.008 nm) that is a crystal lattice interval (lattice constant) in a C axis direction is the height (h) of the atomic step. That is, in the 4H—SiC substrate, the height (h) of the atomic step is a value (about 0.25 nm) calculated from 1.008 nm/4.
  • the height (h) of the atomic step in a 6H—SiC substrate is about 0.25 nm similar to the 4H—SiC substrate. That is, in the 6H—SiC substrate, the lattice constant C 0 in a C axis direction is 1.542 nm, and 1 ⁇ 6 of this value is the height (h) of the atomic step. Therefore, the height (h) of the atomic step is about 0.25 nm.
  • the 4H—SiC substrate and 6H—SiC substrate are described in the item of an object to be polished.
  • the principal surface in a predetermined surface direction has an atomic step-and-terrace structure derived from the crystal structure and has a high smoothness, and in addition, the proportion of the average line roughness (R) of the front edge portion 2 a to the height (h) of the atomic step 2 is 20% or less.
  • the proportion of the average line roughness (R) of the front edge portion 2 a to the height (h) of the atomic step 2 is 20% or less.
  • crystal defect or the like is suppressed in the front edge portion 2 a which is the origin of epitaxial crystal growth in a step flow method. Therefore, a high quality silicon-carbide semiconductor layer or gallium nitride semiconductor layer can be obtained by epitaxially growing crystals on the principal surface of this single-crystal silicon-carbide substrate.
  • the step flow method is described in detail in the item of epitaxial growth described below.
  • Such a principal surface of the single-crystal silicon-carbide substrate having excellent shape at the front edge portion 2 a and in which crystal defect at the portion is suppressed can be obtained by conducting CMP by using the polishing solution of the present invention that contains an oxidizing agent having large oxidation power and containing a transition metal having oxidation-reduction potential of 0.5V or more and does not substantially contain an abrasive.
  • the polishing solution of an embodiment of the present invention is a polishing solution for chemically and mechanically polishing a principal surface in a predetermined surface direction of a single-crystal silicon-carbide substrate, and the polishing solution contains an oxidizing agent containing a transition metal having oxidation-reduction potential of 0.5V or more and water, and does not contain an abrasive.
  • polishing solution By conducting CMP of a principal surface of a single-crystal silicon-carbide substrate by using this polishing solution, scratch to the surface and crystal defect of the front edge portion of the atomic step, due to mechanical damage in polishing can be suppressed. Then, as described before, the polished principal surface having the atomic step-and-terrace structure derived from crystal structure and in which the proportion of the average line roughness (R) of the front edge portion to the height (h) of the atomic step is 20% or less ((R/h) ⁇ 100 ⁇ 20) (hereinafter referred to as a “polished principal surface”) can be obtained.
  • a substrate having high hardness and high chemical stability such as a single-crystal silicon-carbide substrate
  • a substrate having high hardness and high chemical stability such as a single-crystal silicon-carbide substrate
  • an oxidizing agent having strong oxidation power in the atomic level processing In the case where this polishing solution has been used, an abrasive does not remain on the single-crystal silicon-carbide substrate after cleaning. As a result, the occurrence of crystal defect due to an abrasive residue can be prevented.
  • the oxidizing agent contained in the polishing solution of the embodiment of the present invention permanganate ion is preferred, and its content is preferably 0.05% by mass or more and 5% by mass or less.
  • the pH of the polishing solution is preferably 11 or less, and more preferably 5 or less.
  • a pH adjuster can be added to the polishing solution. In the case where the pH of the polishing solution is 11 or less, the oxidizing agent acts effectively, and as a result, polishing rate is high and polishing performances are good.
  • the oxidizing agent containing a transition metal having oxidation-reduction potential of 0.5V or more contained in the polishing solution of the embodiment of the present invention forms an oxide layer on a face to be polished of the single-crystal silicon-carbide substrate that is an object to be polished.
  • the polishing of the object to be polished is accelerated by removing the oxide layer by mechanical power from the face to be polished. That is, although the silicon carbide single crystal that is a non-oxide is a polishing-difficult material, an oxide layer can be formed on the surface by an oxidizing agent containing a transition metal having oxidation-reduction potential of 0.5V or more in the polishing solution.
  • the oxide layer formed has low hardness and is easy to be polished as compared with that of the object to be polished, and thus the oxide layer can be removed by the contact with a polishing pad that does not contain an abrasive therein. Therefore, sufficiently-high polishing rate can be achieved.
  • An oxidation-reduction potentiometer generally commercially available can be used for an oxidation-reduction potential measurement method.
  • a silver/silver chloride electrode in which a saturated potassium chloride aqueous solution was used as an internal liquid can be used as a reference electrode, and a metal electrode such as platinum can be used as a working electrode.
  • a temperature and pH of the aqueous solution at measuring the measurement is performed at room temperature near 25° C., and the pH can be measured by preparing samples appropriately adjusted.
  • the “face to be polished” is a face of an object to be polished, which is polished, and means, for example, a surface.
  • Examples of the oxidizing agent containing a transition metal having oxidation-reduction potential of 0.5V or more and contained in the polishing solution include permanganate ion, vanadate ion, dichromate ion, cerium ammonium nitrate, iron (III) nitrate nonahydrate, silver nitrate, phosphotungstic acid, silicotungstic acid, phosphomolybdic acid, phosphotungstomolybdic acid, and phosphovanadomolybdic acid.
  • Permanganate ion is particularly preferred.
  • Permanganate such as potassium permanganate or sodium permanganate is preferred as a supply source of the permanganate ion.
  • permanganate ion is particularly preferred as the oxidizing agent in the polishing of the single-crystal silicon-carbide substrate.
  • Oxidation-reduction potential is used as an index of oxidation power that an oxidizing agent oxidizes a material.
  • Oxidation-reduction potential of permanganate ion is 1.70V, and the oxidation-reduction potential is higher than that of potassium perchlorate (KClO 4 ) (oxidation-reduction potential: 1.20V) and sodium hypochlorite (NaClO) (oxidation-reduction potential: 1.63V) that are generally used as an oxidizing agent.
  • the permanganate ion has a large reaction rate of an oxidation reaction as compared with hydrogen peroxide (oxidation-reduction potential: 1.76V) that is known as an oxidizing agent having strong oxidation power, and therefore can quickly exhibit the strength of oxidation power.
  • hydrogen peroxide oxidation-reduction potential: 1.76V
  • the content (concentration) of the permanganate ion in the polishing solution is preferably from 0.05% by mass to 5% by mass. In the case of less than 0.05% by mass, the effect as an oxidizing agent is not expected, and there is a concern that very long time is required to form a smooth surface by polishing or scratch occurs on a face to be polished. In the case where the content of permanganate ion exceeds 5% by mass, depending on a temperature, the permanganate is not completely dissolved and precipitates, and there is a concern that scratch is generated by that solid permanganate contacts a face to be polished.
  • the content of the permanganate ion contained in the polishing solution is more preferably 0.1% by mass or more and 4% by mass or less, and particularly preferably 0.2% by mass or more and 3.5% by mass or less.
  • the polishing solution of an embodiment of the present invention is characterized by substantially not containing a polishing abrasive such as silicon oxide (silica) particles, cerium oxide (ceria) particles, aluminum oxide (alumina) particles, zirconium oxide (zirconia) particles, and titanium oxide (titania) particles.
  • a polishing abrasive such as silicon oxide (silica) particles, cerium oxide (ceria) particles, aluminum oxide (alumina) particles, zirconium oxide (zirconia) particles, and titanium oxide (titania) particles.
  • the pH of the polishing solution of an embodiment of the present invention is preferably 11 or less, more preferably 5 or less, and particularly preferably 3 or less, from the standpoint of polishing performances. In the case where the pH exceeds 11, there is a concern that not only sufficient polishing rate is not obtained, but smoothness of a face to be polished is deteriorated.
  • the pH of the polishing solution can be adjusted by the addition/blending of an acidic or basic compound that is a pH adjuster.
  • the acid that can be used include inorganic acids such as nitric acid, sulfuric acid, phosphoric acid, and hydrochloric acid; saturated carboxylic acids such as formic acid, acetic acid, propionic acid, and butyric acid; hydroxy acids such as lactic acid, malic acid and citric acid; aromatic carboxylic acids such as phthalic acid and salicylic acid; dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, fumaric acid, and maleic acid; and organic acids such as amino acid and heterocyclic carboxylic acids.
  • Nitric acid and phosphoric acid are preferably used, and of those, nitric acid is particularly preferably used.
  • the basic compound that can be used include ammonia, lithium hydroxide, potassium hydroxide, sodium hydroxide, quaternary ammonium compound such as tetramethyl ammonium, and organic amines such as monoethanolamine, ethylethanolamine, diethanolamine, and propylenediamine.
  • Potassium hydroxide and sodium hydroxide are preferably used, and of those, potassium hydroxide is particularly preferably used.
  • the content (concentration) of those acidic or basic compounds is an amount that adjusts the pH of the polishing solution to a predetermined range (pH 11 or less, more preferably 5 or less, and still more preferably 3 or less).
  • water is contained as a dispersion medium.
  • Water is a medium for dispersing and dissolving the oxidizing agent described above and optional components described below that are added as necessary.
  • the water is not particularly limited, but pure water, ultrapure water and ion-exchanged water (deionized water) are preferred from the standpoints of influence to blending components, contamination of impurities and influence to pH.
  • the polishing solution of an embodiment of the present invention is prepared so that the respective components described above are contained in the predetermined proportions and are mixed so as to become uniformly dissolved and mixed state, and then used.
  • a stirring mixing method by stirring blades which is generally used in the production of a polishing solution. It is not necessary to supply the polishing solution to the polishing site as one in which all of polishing components as constituents have been previously mixed. Polishing components may be mixed when supplying to the polishing side, thereby forming a composition of a polishing solution.
  • the polishing solution of an embodiment of the present invention can appropriately contain lubricants, chelating agents, reducing agents, thickeners, viscosity adjusters, corrosion inhibitors and the like, as necessary as long as it does not conflict with the spirit of the present invention.
  • those additives have the function of an oxidizing agent or an acid or basic compound, those additives are handled as an oxidizing agent or an acid or basic compound.
  • lubricant use can be made of anionic, cationic, nonionic, and amphoteric surfactants, polysaccharides, water-soluble polymers and the like.
  • surfactant use can be made of those having a hydrophobic group such as an aliphatic hydrocarbon group or an aromatic hydrocarbon group, or which has at least one of bonding groups such as ester, ether and amide and linking groups such as acyl group and alkoxyl group introduced in these hydrophobic group, and those having a hydrophilic group having carboxylic acid, sulfonic acid, sulfuric acid ester, phosphoric acid, phosphoric acid ester and amino acid.
  • polysaccharide use can be made of alginic acid, pectin, carboxymethyl cellulose, curdlan, pullulan, xanthan gum, carrageenan, gellan gum, locust bean gum, gum arabic, tamarind, and psyllium.
  • water-soluble polymer use can be made of polyacrylic acid, polyvinyl alcohol, polyvinyl pyrrolidone, polymethacrylic acid, polyacrylamide, polyaspartic acid, polyglutamic acid, polyethylene imine, polyacrylamine, and polystyrene sulfonate.
  • the conventional polishing pad that does not contain an abrasive therein is used, the polishing pad is contacted with a face to be polished of a single-crystal silicon-carbide substrate that is an object to be polished, while supplying the polishing solution to the polishing pad, and the polishing is conducted by relative movement of those.
  • the object to be polished is described below.
  • the conventional polishing apparatus can be used as a polishing apparatus.
  • An example of the usable polishing apparatus is shown in FIG. 3 .
  • a polishing surface plate 11 is provided in the state of being rotatably supported around its vertical shaft center C 1 .
  • the polishing surface plate 11 is rotation-driven in a direction shown by an arrow in the Figure by a surface plate drive motor 12 .
  • a conventional polishing pad 13 that does not contain an abrasive therein is adhered to the upper surface of the polishing surface plate 11 .
  • a substrate holding member (carrier) 15 that holds an object 14 to be polished on the lower surface thereof by adsorption or using a holding frame is supported rotatably around its shaft center C 2 and movably in a direction of the shaft center C 2 .
  • the substrate holding member 15 is constituted so as to rotate in a direction shown by an arrow by a carrier drive motor not shown or a rotation moment received from the polishing surface plate 11 .
  • a single-crystal silicon-carbide substrate that is the object 14 to be polished is held on the lower surface of the substrate holding member 15 , that is, a surface facing the polishing pad 13 .
  • the object 14 to be polished is pushed to the polishing pad 13 by a predetermined load.
  • a dropping nozzle 16 or a spray nozzle (not shown) is provided in the vicinity of the substrate holding member 15 , and the above-described polishing solution 17 send from a tank not shown is supplied on the polishing surface plate 11 .
  • the object 14 to be polished held on the substrate holding member 15 is pushed to the polishing pad 13 in the state that the polishing surface plate 11 and the polishing pad 13 adhered thereto, and the substrate holding member 15 and the object 14 to be polished held on the lower surface thereof are rotation-driven around the respective axis centers by the surface plate drive motor 12 and the carrier drive motor , while supplying the polishing solution 17 to the surface of the polishing pad 13 from the dropping nozzle 16 or the like.
  • the face to be polished of the object 14 to be polished that is, the surface facing the polishing pad 13 , is chemically and mechanically polished.
  • the substrate holding member 15 may perform not only rotational motion but straight-line motion. Further, the polishing surface plate 11 and the polishing pad 13 may not perform rotational motion and for example may move in one direction by a belt system.
  • the polishing pad 13 use can be made of the conventional polishing pad comprising a non-woven fabric or a porous resin such as foamed polyurethane and not containing an abrasive.
  • the polishing solution 17 may be supplied to the polishing pad 13 .
  • groove processing such as a lattice pattern, a concentric pattern or a helical pattern may be applied to the surface of the polishing pad 13 .
  • the polishing may be performed while performing conditioning of the surface of the polishing pad 13 by contacting a pad conditioner with the surface of the polishing pad 13 .
  • Polishing conditions by the polishing apparatus 10 are not particularly limited. Polishing pressure can be further increased by pushing the polishing pad 13 to the substrate holding member 15 by applying load, thereby improving the polishing rate.
  • the polishing pressure is preferably from about 5 to 80 kPa, and is more preferably from about 10 to 50 kPa from the standpoints of uniformity of polishing rate, flatness and prevention of polishing defect such as scratch in a face to be polished.
  • the number of revolution of the polishing surface plate 11 and the substrate holding member 15 is preferably from about 50 to 500 rpm, but is not limited to this.
  • the amount of the polishing solution 17 supplied is appropriately adjusted and selected by the composition of the polishing solution and the polishing conditions described above.
  • the object to be polished that is polished by using the polishing solution of an embodiment of the present invention is a single-crystal silicon-carbide substrate or a single-crystal gallium-nitride substrate that is a non-oxide single crystal, and is more preferably a single-crystal silicon-carbide substrate. More specifically, a single-crystal silicon-carbide substrate having crystal structure of 3C—SiC, 4H—SiC or 6H—SiC can be mentioned. The 3C—, 4H— and 6H— show crystal polymorph of silicon carbide determined by the lamination order of Si—C pair. High polishing rate can be achieved by using the polishing solution of the embodiment. Furthermore, a principal surface (polished principal surface) having the following surface properties can be obtained.
  • the front edge portion 2 a of the atomic step 2 becomes a shape having crack or dent due to mechanical damage at polishing, and crystal defect occurs. Excessive polishing of the front edge portion 2 a by an abrasive having strong mechanical action is considered as the cause of the crystal defect.
  • the polishing solution of an embodiment of the present invention does not substantially contain abrasive. Therefore, in the atomic step-and-terrace structure formed on the polished principal surface, mechanical damage applied to the front edge portion 2 a of the atomic step is considerably reduced. As a result, the front edge portion 2 a free of crack, dent and crystal defect can be formed as shown in FIG. 1( a ) and FIG. 1( b ), and processing accuracy in atomic level in which smoothness is high and the front edge portion 2 a maintains excellent shape can be achieved.
  • an affected layer due to diamond polishing can be promptly removed in high polishing rate by only mechanical action by a polishing pad having hardness lower than that of an abrasive, even though mechanical action by an abrasive is not applied. Accordingly, high processing accuracy in atomic level in which damage to the face to be polished of a single-crystal silicon-carbide substrate has been suppressed is possible.
  • Mechanism of epitaxial growth of a semiconductor layer on a single-crystal silicon-carbide substrate by a step flow method, and a role of a front edge portion of an atomic step are described on the basis of FIG. 5 .
  • a silicon carbide semiconductor layer on a single-crystal silicon-carbide substrate silicon atoms and carbon atoms are deposited by a thermal CVD method on the polished principal surface having formed thereon an atomic step-and-terrace structure of the single-crystal silicon-carbide substrate, followed by crystal growth.
  • Each atom adhered to the terrace 1 of the atomic step-and-terrace structure reaches the front edge portion 2 a and bonds to an atom having dangling bond of the front edge portion 2 a, and crystal is grown in a horizontal direction (a direction perpendicular to the front edge portion 2 a; shown by an arrow in FIG. 5 ) on the surface of the terrace 1 , thereby a film is formed. That is, the front edge portion 2 a of the atomic step 2 functions as the origin of crystal growth in epitaxial growth.
  • crystal quality of a semiconductor layer film-formed on a single-crystal silicon-carbide substrate is strongly influenced by crystal defect and surface state of the substrate.
  • crystal defect of the single-crystal silicon-carbide substrate include micropipe defect, screw dislocation defect, and edge dislocation defect.
  • surface state include scratch by polishing, adhesion of contamination such as an abrasive derived from a polishing agent to the surface of the terrace 1 , and a surface oxide of the terrace 1 .
  • the front edge portion 2 a of the atomic step 2 that is the origin of epitaxial growth, the propagation of defect present on this portion is considered.
  • the polished principal surface of the single-crystal silicon-carbide substrate obtained by using the conventional slurry is that because the atomic step-and-terrace structure is formed and smoothened, crystal defect of a semiconductor layer due to scratch and the like on the surface of the terrace 1 can be suppressed, but because the front edge portion 2 a that is the origin of crystal growth has crack, dent and the like and becomes the shape which the crystal defect is unavoidable, high quality silicon-carbide semiconductor layer or gallium-nitride semiconductor layer can not be formed thereon by epitaxial growth.
  • polishing solution of an embodiment of the present invention a high-smooth principal surface having an atomic step-and-terrace structure in which mechanical damage to the front edge portion 2 a of the atomic step 2 has been suppressed in the atomic step-and-terrace structure can be obtained, and as a result, crystal growth of higher quality semiconductor layer becomes possible. Furthermore, because the polishing solution of an embodiment of the present invention does not contain an abrasive, an abrasive does not remain on the surface of a single-crystal silicon-carbide substrate even after cleaning, and crystal defect of a semiconductor layer due to abrasive residue derived from a polishing agent can be prevented.
  • Examples 1 to 4 are examples of the present invention, and Examples 5 and 6 are comparative examples.
  • Each polishing solution of Examples 1 to 4 was prepared as follows. Pure water was added to potassium permanganate that is an oxidizing agent sown in Table 1, followed by stirring for 10 minutes using stirring blades. As a pH adjuster, nitric acid in Examples 1 to 3 and potassium hydroxide in Example 4 were gradually added to the resulting solution while stirring to adjust to a predetermined pH shown in Table 1. Thus, each polishing solution was obtained.
  • the content (concentration: % by mass) of potassium permanganate that is an oxidizing agent used in each example to the whole polishing solution is shown in Table 1.
  • the concentration of an oxidizing agent in Table 1 is not a concentration of permanganate ions, but is a concentration of potassium permanganate.
  • Polishing agent solutions of Examples 5 and 6 were prepared as follows.
  • pure water was added to a colloidal silica dispersion having a primary particle size of 40 nm, a secondary particle size of about 70 nm and a silica solid content of about 40 wt %, followed by stirring for 10 minutes by using stirring blades.
  • Ammonium vanadate as a metal salt was added to the resulting solution while stirring, and hydrogen peroxide was added last thereto, followed by stirring for 30 minutes.
  • a polishing agent solution adjusted to each component concentration shown in Table 1 was obtained.
  • Example 6 pure water was added to a colloidal silica dispersion having a primary particle size of 80 nm, a secondary particle size of about 110 nm and a silica solid content of about 40 wt %, followed by stirring for 10 minutes. Potassium permanganate as an oxidizing agent was added to the resulting solution while stirring, and nitric acid was then gradually added thereto to adjust to pH as shown in Table 1. Thus, a polishing agent solution was obtained. The content (concentration: % by mass) of each component used in Examples 5 and 6 to the whole polishing agent is shown in Table 1.
  • the concentration of the oxidizing agent in Table 1 is not a concentration of permanganate ions, but is a concentration of potassium permanganate.
  • the primary particle size of silica particles blended in Examples 5 and 6 was obtained by converting from a specific surface area obtained by a BET method, and the secondary particle size was measured by using Microtrac UPA (manufactured by Nikkiso Co., Ltd) that is a dynamic light-scattering particle size analyzer.
  • polishing performances were evaluated by the following methods.
  • Small-sized one side polishing apparatus manufactured by MAT Inc. was used as a polishing machine.
  • SUBA800-XY-groove manufactured by Nitta-Haas Incorporated
  • conditioning of the polishing pad was conducted by using a diamond disk and a brush before polishing.
  • Polishing was conducted for 30 minutes under the conditions of supply rate of the polishing solution or polishing agent solution: 25 cm 3 /min, the number of revolution of a polishing surface plate: 68 rpm, the number of revolution of a substrate holding part: 68 rpm, and polishing pressure: 5 psi (34.5 kPa).
  • SiC substrate As a material to be polished, 4H—SiC substrate having a diameter of 3 inches, having been subjected to a preliminary polishing treatment using diamond abrasive was prepared.
  • Polishing rate was evaluated by amount of thickness change per unit time (nm/hr) of the single-crystal SiC substrate. Specifically, mass of an unpolished substrate having a known thickness and mass of the substrate after polishing for each period of time were measured, and the mass change was obtained from the difference. The change per unit time of the thickness of the substrate obtained from the mass change was calculated by using the following equation. The calculation results of the polishing rate are shown in Table 1.
  • V ⁇ m/m 0 ⁇ T 0 ⁇ 60/ t
  • ⁇ m (g) is mass change before and after polishing
  • m0 (g) is initial mass of an unpolished substrate
  • m1 (g) is mass of the substrate after polishing
  • V is polishing rate (nm/hr)
  • T0 is a thickness of an unpolished substrate (nm)
  • t is a polishing time (min)).
  • Measurement position of the average line roughness (Ra) of the front edge portion 2 a is shown by a broken line in FIG. 6 .
  • reference numeral 1 indicates a terrace in an atomic step-and-terrace structure.
  • Proportion (A) of the average line roughness (R) to a height (h) of the atomic step was calculated from the average line roughness (R) of the front edge portion obtained in (3-4) above by using the following formula. The result is shown in Table 1.
  • the height (h) of a bilayer atomic step comprising silicon and carbon pair is calculated from 1.008 nm/4 as described above, and is about 0.25 nm.
  • the polishing rate was remarkably low value as compared with the case of using the polishing solutions of Examples 1 to 4. Furthermore, although the formation of the atomic step-and-terrace structure is confirmed from AFM image of the principal surface after polishing, the proportion of the average line roughness (R) of the front edge portion of the atomic step to the theoretical value of the height (h) of the atomic step is 24% which is larger as compared with Examples 1 to 4, and thus, the surface roughness is deteriorated. It was seen that crack and dent are generated in the front edge portion of the atomic step by mechanical damage due to polishing. Furthermore, abrasive residue that seems to be colloidal silica was observed on the polished principal surface.
  • a single-crystal silicon-carbide substrate having high hardness and high chemical stability can be polished in high polishing rate, and the principal surface having high processing accuracy in atomic level in which the atomic step-and-terrace structure free of scratch and having excellent flatness and smoothness was formed, mechanical damage of the front edge portion of the atomic step that becomes the origin of crystal growth in epitaxial growth in a step flow method was suppressed can be obtained. Therefore, film formation of high quality semiconductor layer on a single-crystal silicon-carbide substrate becomes possible, and this can contribute to the improvement in productivity of electronic device and the like using a single-crystal silicon-carbide substrate having the semiconductor layer thus film-formed thereon.

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150108504A1 (en) * 2013-10-17 2015-04-23 Seiko Epson Corporation Method for producing 3c-sic epitaxial layer, 3c-sic epitaxial substrate, and semiconductor device
JP2018050065A (ja) * 2014-03-31 2018-03-29 株式会社ノリタケカンパニーリミテド ＧａＮ単結晶材料の研磨加工方法
US10113249B2 (en) * 2014-10-23 2018-10-30 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method for manufacturing the same
US20190010359A1 (en) * 2016-02-09 2019-01-10 Mitsui Mining & Smelting Co., Ltd. Polishing slurry and polishing material
US10208400B2 (en) 2015-02-02 2019-02-19 Fuji Electric Co., Ltd. Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
EP3604475A4 (en) * 2017-03-23 2020-12-23 Fujimi Incorporated POLISHING COMPOSITION
US20210062362A1 (en) * 2019-05-10 2021-03-04 Adamant Namiki Precision Jewel Co., Ltd. Diamond crystal substrate, method for producing diamond crystal substrate, and method for homo-epitaxially growing diamond crystal
CN113881349A (zh) * 2021-09-01 2022-01-04 上海工程技术大学 用于碳化硅晶片硅表面化学机械抛光的抛光液及抛光方法
US11339311B2 (en) 2018-01-11 2022-05-24 Fujimi Incorporated Polishing composition
US20220220637A1 (en) * 2019-05-17 2022-07-14 Sumitomo Electric Industries, Ltd. Silicon carbide substrate

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6076548B1 (ja) * 2015-12-11 2017-02-08 新電元工業株式会社 炭化珪素半導体装置の製造方法、半導体基体の製造方法、炭化珪素半導体装置及び炭化珪素半導体装置の製造装置
JP6187948B1 (ja) * 2016-03-11 2017-08-30 東邦エンジニアリング株式会社 平坦加工装置、その動作方法および加工物の製造方法
TWI641038B (zh) * 2016-08-02 2018-11-11 兆遠科技股份有限公司 拋光液供給系統
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JP6901297B2 (ja) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物
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US11342418B2 (en) * 2017-12-08 2022-05-24 Sumitomo Electric Industries, Ltd. Silicon carbide substrate
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CN115101584B (zh) * 2022-08-25 2022-11-15 青禾晶元(天津)半导体材料有限公司 一种复合碳化硅衬底及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030139069A1 (en) * 2001-12-06 2003-07-24 Block Kelly H. Planarization of silicon carbide hardmask material
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
US20100279506A1 (en) * 2009-05-04 2010-11-04 Michael White Polishing silicon carbide
US20110244684A1 (en) * 2010-03-31 2011-10-06 Fujifilm Corporation Polishing liquid and polishing method
US20120077422A1 (en) * 2010-09-12 2012-03-29 Taiki Yoshino Polishing liquid composition
US20120094491A1 (en) * 2009-08-19 2012-04-19 Hitachi Chemical Company, Ltd. Cmp polishing liquid and polishing method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426160A (ja) * 1990-05-22 1992-01-29 Nec Corp 縦型超格子の製造方法
KR20000068834A (ko) * 1997-08-27 2000-11-25 모리시타 요이찌 탄화규소기판 및 그 제조방법, 및 탄화규소기판을 사용한 반도체소자
JP2003007980A (ja) * 2001-06-20 2003-01-10 Sony Corp 磁気特性の変調方法および磁気機能装置
JPWO2004090963A1 (ja) 2003-04-03 2006-07-06 日立化成工業株式会社 研磨パッド、その製造方法およびそれを用いた研磨方法
JP4628189B2 (ja) 2005-06-07 2011-02-09 Ｈｏｙａ株式会社 炭化珪素単結晶の製造方法
JP2007027663A (ja) * 2005-07-21 2007-02-01 Fujimi Inc 研磨用組成物
US20070039926A1 (en) 2005-08-17 2007-02-22 Cabot Microelectronics Corporation Abrasive-free polishing system
TWI332017B (en) * 2005-12-26 2010-10-21 Hitachi Chemical Co Ltd Abrasive-free polishing slurry and cmp process
US20070147551A1 (en) 2005-12-26 2007-06-28 Katsumi Mabuchi Abrasive-free polishing slurry and CMP process
JP5095228B2 (ja) 2007-01-23 2012-12-12 株式会社フジミインコーポレーテッド 研磨用組成物
JP5307381B2 (ja) * 2007-11-12 2013-10-02 Ｈｏｙａ株式会社 半導体素子ならびに半導体素子製造法
WO2009104537A1 (ja) * 2008-02-18 2009-08-27 国立大学法人名古屋工業大学 微細構造の作製方法及び微細構造を備えた基板
JP5358996B2 (ja) * 2008-03-26 2013-12-04 日立金属株式会社 ＳｉＣ単結晶基板の製造方法
EP2394787B1 (en) 2009-02-04 2019-05-29 Hitachi Metals, Ltd. Manufacturing method for a silicon carbide monocrystal substrate
JP5267177B2 (ja) * 2009-02-04 2013-08-21 日立金属株式会社 炭化珪素単結晶基板の製造方法
JP5658443B2 (ja) * 2009-05-15 2015-01-28 山口精研工業株式会社 炭化ケイ素基板用研磨剤組成物
JP4959763B2 (ja) * 2009-08-28 2012-06-27 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CN103493183B (zh) 2011-04-26 2016-06-08 旭硝子株式会社 非氧化物单晶基板的研磨方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030139069A1 (en) * 2001-12-06 2003-07-24 Block Kelly H. Planarization of silicon carbide hardmask material
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
JP2008068390A (ja) * 2006-09-15 2008-03-27 Noritake Co Ltd 結晶材料の研磨加工方法
US20100279506A1 (en) * 2009-05-04 2010-11-04 Michael White Polishing silicon carbide
US20120094491A1 (en) * 2009-08-19 2012-04-19 Hitachi Chemical Company, Ltd. Cmp polishing liquid and polishing method
US20110244684A1 (en) * 2010-03-31 2011-10-06 Fujifilm Corporation Polishing liquid and polishing method
US20120077422A1 (en) * 2010-09-12 2012-03-29 Taiki Yoshino Polishing liquid composition

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9758902B2 (en) * 2013-10-17 2017-09-12 Seiko Epson Corporation Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device
US20150108504A1 (en) * 2013-10-17 2015-04-23 Seiko Epson Corporation Method for producing 3c-sic epitaxial layer, 3c-sic epitaxial substrate, and semiconductor device
JP2018050065A (ja) * 2014-03-31 2018-03-29 株式会社ノリタケカンパニーリミテド ＧａＮ単結晶材料の研磨加工方法
US10113249B2 (en) * 2014-10-23 2018-10-30 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method for manufacturing the same
US10704163B2 (en) 2014-10-23 2020-07-07 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method for manufacturing the same
US10208400B2 (en) 2015-02-02 2019-02-19 Fuji Electric Co., Ltd. Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
US11015086B2 (en) * 2016-02-09 2021-05-25 Mitsui Mining & Smelting Co., Ltd. Polishing slurry and polishing material
US20190010359A1 (en) * 2016-02-09 2019-01-10 Mitsui Mining & Smelting Co., Ltd. Polishing slurry and polishing material
US11319460B2 (en) 2017-03-23 2022-05-03 Fujimi Incorporated Polishing composition
EP3919576A1 (en) * 2017-03-23 2021-12-08 Fujimi Incorporated Polishing composition
EP3604475A4 (en) * 2017-03-23 2020-12-23 Fujimi Incorporated POLISHING COMPOSITION
US11339311B2 (en) 2018-01-11 2022-05-24 Fujimi Incorporated Polishing composition
US20210062362A1 (en) * 2019-05-10 2021-03-04 Adamant Namiki Precision Jewel Co., Ltd. Diamond crystal substrate, method for producing diamond crystal substrate, and method for homo-epitaxially growing diamond crystal
US11505878B2 (en) * 2019-05-10 2022-11-22 Adamant Namiki Precision Jewel Co., Ltd. Diamond crystal substrate, method for producing diamond crystal substrate, and method for homo-epitaxially growing diamond crystal
US20220220637A1 (en) * 2019-05-17 2022-07-14 Sumitomo Electric Industries, Ltd. Silicon carbide substrate
US12104278B2 (en) * 2019-05-17 2024-10-01 Sumitomo Electric Industries, Ltd. Silicon carbide substrate
CN113881349A (zh) * 2021-09-01 2022-01-04 上海工程技术大学 用于碳化硅晶片硅表面化学机械抛光的抛光液及抛光方法

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