US20090289315A1 - Semiconductor sensor and manufacturing method of sensor body for semiconductor sensor - Google Patents

Semiconductor sensor and manufacturing method of sensor body for semiconductor sensor Download PDF

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Publication number
US20090289315A1
US20090289315A1 US12/158,138 US15813806A US2009289315A1 US 20090289315 A1 US20090289315 A1 US 20090289315A1 US 15813806 A US15813806 A US 15813806A US 2009289315 A1 US2009289315 A1 US 2009289315A1
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Prior art keywords
weight portion
resist layer
unphotosensitized
support portion
ultraviolet light
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US12/158,138
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English (en)
Inventor
Tsutomu Sawai
Komori Kazuya
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Hokuriku Electric Industry Co Ltd
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Hokuriku Electric Industry Co Ltd
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Assigned to HOKURIKU ELECTRIC INDUSTRY CO., LTD. reassignment HOKURIKU ELECTRIC INDUSTRY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOMORI, KAZUYA, SAWAI, TSUTOMU
Publication of US20090289315A1 publication Critical patent/US20090289315A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Definitions

  • the present invention relates to a semiconductor sensor and a method of manufacturing a sensor body for the semiconductor sensor. More specifically, the present invention relates to a semiconductor sensor capable of measuring acceleration in a predetermined direction caused by force externally applied, and gravitational acceleration in a predetermined direction in a stationary state, which is applied by inclining the semiconductor sensor, or a semiconductor sensor used as a gyroscope, and a manufacturing method of a sensor body used for the semiconductor sensor.
  • Patent Document 1 discloses an example of semiconductor sensor including a sensor body, an additional weight portion, and a pedestal.
  • the sensor body includes a weight portion disposed in a central portion thereof, a cylindrical support portion disposed in an outer peripheral portion thereof, and a diaphragm portion disposed between the weight portion and the support portion. Then, the support portion is supported by the cylindrical pedestal.
  • the additional weight portion is fixed to an end of the weight portion and is arranged in a space surrounded by the pedestal and the support portion.
  • each sensor element formed on the diaphragm portion accordingly outputs a detection signal indicative of acceleration corresponding to the amount of distortion.
  • Patent Document 1 Japanese Patent Application Publication No. 2004-125704
  • the support portion is supported by the cylindrical pedestal. Accordingly, there is a limit to reducing the thickness of the semiconductor sensor including the size of the pedestal.
  • An object of the present invention is to provide a semiconductor sensor of which the thickness may be reduced, and a method of manufacturing a sensor body for the semiconductor sensor.
  • Another object of the present invention is to provide a semiconductor sensor which does not need a pedestal that supports a support portion and a method of manufacturing the semiconductor sensor.
  • the total length of the weight portion and the additional weight portion as measured in an extending direction of the centerline is shorter than the length of the support portion as measured in the extending direction of the centerline.
  • the weight portion and the additional weight portion have dimensions and shapes that allow movement thereof within a shape which is defined, being surrounded by the support portion.
  • the weight portion and the additional weight portion may be received within the space surrounded by the support portion. For this reason, it is not necessary to provide a pedestal that supports the support portion as in the conventional art, because the weight portion and the additional weight portion individually have the dimensions and shape that allow movement thereof within the space surrounded by the support portion. The number of components of the semiconductor sensor may be thereby reduced, so that the thickness of the semiconductor sensor may be reduced.
  • the additional weight portion may be structured to have an upper surface that faces a back surface of the diaphragm portion, a lower surface that opposes the upper surface in the extending direction of the centerline, and an outer peripheral surface located between the upper and lower surfaces.
  • the outer peripheral surface faces the support portion.
  • a shape of an inner peripheral surface of the support portion that faces the additional weight portion and a shape of the additional weight portion are determined so that, when the additional weight portion is displaced toward the diaphragm portion by a predetermined amount, an outside corner portion formed between the outer peripheral surface and the upper surface of the additional weight portion comes to abut against the inner peripheral surface of the support portion, thereby limiting an amount of the displacement of the additional weight portion toward the diaphragm portion.
  • Another semiconductor sensor of the present invention comprises: a sensor body including a weight portion disposed in a central portion thereof, a cylindrical support portion disposed in an outer peripheral portion thereof, and a diaphragm portion disposed between the weight portion and the support portion. Then, the length of the weight portion as measured in an extending direction of a centerline is shorter than the length of the support portion as measured in the extending direction of the centerline.
  • the weight portion has dimensions and a shape that allow movement thereof within a space surrounded by the support portion. In the semiconductor sensor of this type as well, it is not necessary to provide a pedestal that supports the support portion as in the conventional art. The number of components of the semiconductor sensor may be thereby reduced, so that the thickness of the semiconductor sensor may be reduced.
  • the sensor body used for a semiconductor sensor of the present invention may be manufactured as follows. First, an insulating layer is formed on one of the surfaces of the semiconductor substrate. The insulating layer is coated with a photosensitive resist, thereby forming a first unphotosensitized resist layer. Next, ultraviolet light is irradiated onto the first unphotosensitized resist layer through a photomask and then the irradiated first unphotosensitized resist layer is developed, thereby forming on the one surface of the semiconductor substrate a first resist layer having a first etching opening of a predetermined shape. The first resist layer covers a portion where the support portion is to be formed. Then, the insulating layer is etched through the first etching opening to remove the insulating layer located in a portion corresponding to the first etching opening, thereby forming a second etching opening in the insulating layer.
  • the first resist layer is removed, and then anisotropic etching is applied to the semiconductor substrate through the second etching opening, thereby forming a concave portion in the semiconductor substrate.
  • a wall surface insulating film is formed on an inner wall surface of the concave portion. Then, the wall surface insulating film and the insulating layer continuous with the wall surface insulating film are coated with a photosensitive resist, thereby forming a second unphotosensitized resist layer. Ultraviolet light is irradiated onto the second unphotosensitized resist layer through a photomask and then the irradiated second unphotosensitized resist layer is developed, thereby forming a second resist layer of a predetermined shape and a third resist layer. The second resist layer is located on a central location of the concave portion.
  • the second resist layer has an area smaller than an area of a bottom surface of the concave portion and covers a portion where the weight portion is to be formed.
  • the third resist layer covers the portion surrounding the concave portion where the support portion is to be formed.
  • the second and third resist layers define a third etching opening therebetween.
  • the wall surface insulating film is etched through the third etching opening, thereby forming a fourth annular etching opening in the wall surface insulating film.
  • anisotropic etching is applied to the semiconductor substrate through the fourth etching opening, thereby forming an annular concave portion in a portion of the semiconductor substrate located on a bottom of the concave portion.
  • the diaphragm portion is defined by a portion of the semiconductor substrate that corresponds to a bottom surface of the annular concave portion
  • the weight portion is defined by the portion of the semiconductor substrate that is left on a central location of the annular concave portion.
  • such sensor body may readily be formed so as to have the length of the weight portion in the extending direction of the centerline which is shorter than the length of the support portion in the extending direction of the centerline.
  • the insulating layer may be of a two-layered structure, comprising a silicon oxide film formed by thermally oxidizing the surface of the semiconductor substrate and a silicon nitride film formed on the silicon oxide film by thin-film formation technique, for example. With this arrangement, adhesion of the silicon nitride film to the semiconductor substrate is improved.
  • the wall surface insulating film may be formed of a silicon nitride film formed by thin-film formation technique.
  • the process of irradiating ultraviolet light onto the second unphotosensitized resist layer through the photomask may comprise two steps, a first irradiation step and a second irradiation step.
  • the ultraviolet light is irradiated onto the second unphotosensitized resist layer through a first negative photomask, thereby cross-linking a portion of the second unphotosensitized resist layer where the support portion is to be formed.
  • the ultraviolet light is irradiated onto the second unphotosensitized resist layer through a second negative photomask after or before the first irradiation step, thereby cross-linking a portion of the second unphotosensitized resist layer where the weight portion is to be formed.
  • the second and third resist layers of accurate shapes and dimensions may be formed.
  • the first negative photomask may comprise: a main portion through which the ultraviolet light passes, and a mask portion formed on a central location of an opposing surface of the main portion that faces the second unphotosensitized resist layer.
  • the mask portion may be so formed that the ultraviolet light is not irradiated onto a portion of the second unphotosensitized resist layer other than a portion of the second unphotosensitized resist layer where the support portion is to be formed.
  • the second negative photomask may comprise a main portion, a first mask portion, and a second mask portion.
  • the main portion includes a base portion that faces the second unphotosensitized resist layer, and a projecting portion having a shape that projects from the base portion along an inner wall surface of the concave portion.
  • the ultraviolet light passes through the main portion.
  • the first mask portion is annularly formed on an irradiation surface of the base portion onto which the ultraviolet light is to be irradiated.
  • the second mask portion is annularly formed on a location of an opposing surface of the projecting portion that faces the second unphotosensitized resist layer and faces the bottom surface of the concave portion.
  • the second mask portion is formed so that the ultraviolet light that has entered through a portion where the first mask portion is not formed is not irradiated onto portions of the second unphotosensitized resist layer other than a portion of the second unphotosensitized resist layer where the weight portion is to be formed.
  • FIG. 1 is a plan view of a semiconductor sensor according to a first embodiment of the present invention.
  • FIG. 2 is a sectional view taken along line II-II of FIG. 1 .
  • FIGS. 3A to 3F are used for explaining a method of manufacturing a sensor body for the semiconductor sensor shown in FIG. 1 .
  • FIGS. 4A to 4E are used for explaining the method of manufacturing the sensor body for the semiconductor sensor shown in FIG. 1 .
  • FIGS. 5A and 5B are used for explaining in detail steps of forming second and third resist layers in the manufacturing method of the sensor body shown in FIGS. 4A to 4E .
  • FIG. 6 is used for explaining a further step of forming the second and third resist layers in the manufacturing method of the sensor body shown in FIG. 4 .
  • FIG. 7 is a sectional view of a semiconductor sensor according to a second embodiment of the present invention.
  • FIG. 8 is a sectional view of a semiconductor sensor according to a third embodiment of the present invention.
  • FIG. 9 is a sectional view of a semiconductor sensor according to a fourth embodiment of the present invention.
  • FIG. 1 is a plan view of a semiconductor sensor in an embodiment (a first embodiment) of the present invention that has been applied to an acceleration sensor.
  • FIG. 2 is a sectional view taken along line II-II of FIG. 1 .
  • the semiconductor sensor in this embodiment includes a sensor body 1 and an additional weight portion 3 fixed onto the sensor body 1 .
  • the sensor body 1 is formed by applying anisotropic etching to a semiconductor crystal substrate formed of single-crystal silicon so that a weight portion 5 is disposed in a central portion of the sensor body 1 , a cylindrical support portion 7 is disposed in an outer peripheral portion of the sensor body 1 , and a diaphragm portion 9 having flexibility is defined between the weight portion 5 and the support portion 7 .
  • a plurality of sensor elements not shown are formed on at least one of the diaphragm portion 9 and the support portion 7 on a surface of the sensor body 1 .
  • the sensor elements are formed of diffused resistors for acceleration detection.
  • a plurality of electrodes 11 are formed on the support portion 7 .
  • the weight portion 5 and the additional weight portion 3 are moved by force based on acceleration caused by force applied externally or gravitational acceleration applied in an inclined stationary state of the semiconductor sensor.
  • the diaphragm portion 9 is thereby flexed. Resistance values of the respective diffused resistors constituting the sensor elements are changed, thereby detecting the acceleration in three axial directions corresponding to an amount of distortion.
  • the weight portion 5 is shaped to project from the diaphragm portion 9 .
  • the direction where the weight portion 5 projects is opposite to a direction toward a surface of the support portion 7 on which electrodes 11 are provided (or a direction toward the back surface of the diaphragm portion 9 ).
  • the weight portion 5 has a cross sectional surface of a polygon. A virtual line that passes through the center of the weight portion 5 and extends in a direction orthogonal to a direction in which the diaphragm portion 9 extends is indicated by a virtual centerline C.
  • An outer peripheral surface 5 a of the weight portion 5 centering on the centerline C is inclined so that the further the outer peripheral surface 5 a is away from the diaphragm portion 9 , the closer the outer peripheral surface 5 a is to the centerline C. Then, the total length L 1 of the weight portion 5 and the additional weight portion 3 as measured in an extending direction of the centerline C is shorter than the length L 2 of the support portion 7 as measured in the extending direction of the centerline C, which will be described later.
  • the support portion 7 has a rectangular annular shape.
  • An inner peripheral surface 13 of the support portion 7 that faces the additional weight portion 3 is structured by an annular arrangement of four trapezoidal inclined surfaces of substantially the same shape so as to follow the outer peripheral surface of a frust-pyramidal or truncated pyramid space defined by the support portion 7 .
  • the inner peripheral surface 13 is so inclined that the further the inner peripheral surface 13 is away from the diaphragm portion 9 , the further the inner peripheral surface 13 is apart from the centerline C.
  • an inclination angle ⁇ 1 of the inner peripheral surface 13 with respect to the centerline C is 36 degrees.
  • a space 15 containing the weight portion 5 , surrounded by the support portion 7 has a frust-pyramidal or truncated pyramid shape of which the cross sectional area is reduced more toward the diaphragm portion 9 .
  • the additional weight portion 3 is shaped like a circular plate, and is formed of tungsten.
  • This additional weight portion 3 includes an upper surface 3 a shaped like a circular plate, which extends along the diaphragm portion 9 and faces the back surface of the diaphragm portion 9 , a lower surface 3 b that opposes the upper surface 3 a in the extending direction of the centerline C, and an outer peripheral surface 3 c located between the upper surface 3 a and the lower surface 3 b.
  • the outer peripheral surface 3 c faces the support portion 7 . For this reason, an outside corner portion 3 d is formed between the outer peripheral surface 3 c and the upper surface 3 a.
  • the outside corner portion 3 d has a crossing angle of 90 degrees between the outer peripheral surface 3 c and the upper surface 3 a. Then, the central portion of the upper surface 3 a is fixed to the bottom of the weight portion 5 using an adhesive. This additional weight portion 3 is fixed onto the weight portion 5 so that the centerline C of the weight portion 5 passes through the center of gravity of the additional weight portion 3 . The weight portion 5 and the additional weight portion 3 are received in the space 15 surrounded by the support portion 7 . Then, the weight portion 5 and the additional weight portion 3 have dimensions and shapes that allow movement thereof within the space 15 . In this embodiment, when the additional weight portion 3 is going to move more than necessary, the outside corner portion 3 d comes to abut against the inner peripheral surface 13 of the support portion 7 . A displacement amount of the additional weight portion 3 is thereby limited within a predetermined range.
  • FIGS. 3A to 3F and FIGS. 4A to 4E A manufacturing method of the sensor body 1 used in the semiconductor sensor in this embodiment will be described with reference to FIGS. 3A to 3F and FIGS. 4A to 4E .
  • an insulating layer 23 is formed each on both surfaces of the semiconductor substrate 21 .
  • the insulating layer 23 may be formed of a single layer or multiple layers.
  • the insulating layer 23 is of a two-layered structure, comprising a silicon oxide film (SiO 2 film) 23 A formed by thermally oxidizing the surface of the semiconductor substrate 21 and a silicon nitride film (Si 3 N 4 film) 23 B formed on the silicon oxide film 23 A by thin-film formation technique.
  • a first unphotosensitized resist layer 25 is formed by coating the insulating layer 23 with a photosensitive resist. Then, as shown in FIG. 3C , a first resist layer 29 having a first etching opening 27 of a predetermined shape is formed on one surface of the semiconductor substrate 21 (which is the lower surface in the page of FIG. 3C ) after ultraviolet light has been irradiated onto the first unphotosensitized resist layer 25 through a first photomask and then the irradiated first unphotosensitized layer has been developed. The first resist layer 29 covers a portion where the support portion 7 is to be formed in a subsequent step. Next, as shown in FIG.
  • the insulating layer is etched through the first etching opening 27 , using a wet etching solution, to remove a portion of the insulating layer 23 that corresponds to the first etching opening 27 .
  • a second etching opening 31 is thereby formed in the insulating layer 23 .
  • the silicon nitride film (Si 3 N 4 film) 23 B phosphoric acid is used as a wet etching solution.
  • an aqueous solution of buffered hydrofluoric acid is employed as a wet etching solution.
  • the first resist layer 29 is removed.
  • anisotropic etching is applied to the semiconductor substrate through the second etching opening 31 , using an anisotropic etching solution.
  • a concave portion 21 a is thereby formed in the semiconductor substrate 21 .
  • an aqueous solution of KOH is employed as an anisotropic etching solution.
  • a wall surface insulating film 33 is formed on an inner peripheral surface 21 b of the concave portion 21 a.
  • the wall surface insulating film 33 is formed of the silicon nitride film (Si 3 N 4 film) formed by thin-film formation technique.
  • the wall surface insulating film 33 and the insulating layer 23 that is continuous with the wall surface insulating film 33 are coated with a photosensitive resist, thereby forming a second unphotosensitized resist layer 35 .
  • the unphotosensitized resist layers 35 are formed each on the entire upper and lower surfaces of the semiconductor substrate 21 .
  • ultraviolet light is irradiated onto the second unphotosensitized resist layer 35 , thereby forming a second resist layer 37 of a predetermined shape and a third resist layer 39 .
  • the second resist layer 37 is disposed on a central location of the concave portion 21 a.
  • the second resist layer 37 has an area smaller than an area of a bottom surface of the concave portion 21 a.
  • the third resist layer 39 covers the insulating layer 23 around the concave portion 21 a.
  • the second resist layer 37 covers a portion where the weight portion 5 is to be formed in a subsequent step, while the third resist layer 39 covers the portion where the support portion 7 is to be formed.
  • the second and third resist layers define a third etching opening 41 therebetween.
  • the ultraviolet light is irradiated in the following manner.
  • a first negative photomask R 1 is prepared, as shown in FIG. 5A .
  • the first negative photomask R 1 has a main portion R 11 and a mask portion M 1 .
  • the main portion R 11 is formed of glass, through which the ultraviolet light passes.
  • the mask portion M 1 is formed on a central portion of an opposing surface R 12 of the main portion R 11 .
  • the opposing surface R 12 faces the second unphotosensitized resist layer 35 .
  • the mask portion M 1 is shaped so that ultraviolet light UV which has entered the main body portion R 11 is masked and is not irradiated onto portions of the second unphotosensitized resist layer 35 other than a portion of the second unphotosensitized resist layer 35 around the concave portion 21 a (portion where the support portion 7 is to be formed in a subsequent step). Then, the ultraviolet light UV is irradiated onto the second unphotosensitized resist layer 35 through the first negative photomask R 1 . With this arrangement, the portion of the second unphotosensitized resist layer 35 where the support portion 7 is to be formed is cross-linked (in a first irradiation step).
  • a second negative photomask R 2 is prepared.
  • the second negative photomask R 2 also has a main portion R 21 formed of glass, through which the ultraviolet light passes.
  • the main portion R 21 has a base portion R 22 that faces the second unphotosensitized resist layer 35 , and a projecting portion R 23 shaped to project from the base portion R 22 along the inner wall surface of the concave portion 21 a.
  • a first annular mask portion M 2 is formed on an irradiation surface R 24 of the base portion R 22 onto which the ultraviolet light is to be irradiated.
  • a second annular mask portion M 3 is formed on an opposing surface R 25 of the projecting portion R 23 that faces the second unphotosensitized resist layer 35 .
  • the second annular mask portion M 3 is shaped so that the ultraviolet light UV which has entered through a portion where the first mask portion M 2 is not provided is masked and is not irradiated onto portions of the second unphotosensitized resist layer 35 other than a portion of the second unphotosensitized resist layer 35 where the weight portion 5 is to be formed. Then, the ultraviolet light UV is irradiated onto the second unphotosensitized resist layer 35 through the second negative photomask R 2 . With this arrangement, the weight portion 5 of the second unphotosensitized resist layer 35 is cross-linked (in a second irradiation step).
  • a portion of the second unphotosensitized resist layer 35 between a central portion of the concave portion 21 a and a peripheral portion of the concave portion 21 a is removed.
  • the portion where the weight portion 5 to be formed is cross-linked.
  • the order in which the first irradiation step and the second irradiation step are performed may be reversed.
  • the portion where the support portion 7 is to be formed may be cross-linked.
  • the ultraviolet light may also be irradiated, using a negative photomask R 3 as shown in FIG. 6 .
  • a negative photomask R 3 On the negative photomask R 3 , mask portions M 4 are formed so that the ultraviolet light is not irradiated onto the portions of the second unphotosensitized resist layer 35 other than portions of the second unphotosensitized resist layer corresponding to the central and surrounding portions of the concave portion 21 a.
  • the wall surface insulating film is etched through the third etching opening 41 , using a wet etching solution.
  • a fourth annular etching opening 43 is thereby formed in the wall surface insulating film 33 .
  • the second resist layer 37 and the third resist layer 39 are removed.
  • anisotropic etching is applied to the semiconductor substrate through the fourth etching opening 43 , using an anisotropic etching solution, thereby forming an annular concave portion 45 in a portion of the semiconductor substrate 21 located on a bottom of the concave portion 21 a.
  • FIG. 4E the wall surface insulating film 33 and the insulating layer 23 on a bottom of the support portion 7 are removed.
  • the diaphragm portion 9 is defined by a portion of the semiconductor substrate 21 that corresponds to a bottom surface of the annular concave portion 45
  • the weight portion 5 is defined by a portion of the semiconductor substrate 21 that is left on a central location of the annular concave portion 45 , thereby completing the formation of the sensor body for a semiconductor sensor.
  • the total length L 1 of the weight portion 5 and the additional weight portion 3 as measured in the extending direction of the centerline C is shorter than the length L 2 of the support portion 7 as measured in the extending direction of the centerline C. Accordingly, the weight portion 5 and the additional weight portion 3 may be received within the space 15 surrounded by the support portion 7 . For this reason, the weight portion 5 and the additional weight portion 3 have the dimensions and shapes that allow movement thereof within the space 15 . Thus, it is not necessary to provide a pedestal that supports the support portion as in the conventional art. The number of components of the semiconductor sensor may be thereby reduced, so that the thickness of the semiconductor sensor may be reduced.
  • FIG. 7 is a sectional view of a semiconductor sensor in a second embodiment of the present invention.
  • the semiconductor sensor in this embodiment is structured by a sensor body 101 alone.
  • the sensor body 101 includes a weight portion 105 disposed in a central portion thereof, a cylindrical support portion 107 disposed in an outer peripheral portion thereof, and a diaphragm portion 109 disposed between the weight portion 105 and the support portion 107 .
  • the length of the weight portion 105 as measured in an extending direction of the centerline C is shorter than the length of the support portion 107 as measured in the extending direction of the centerline C.
  • the weight portion 105 has dimensions and a shape that allow movement thereof within a space 115 surrounded by the support portion 107 .
  • An outer peripheral surface 105 a of the weight portion 105 centering on the centerline C, extends in parallel with the centerline C.
  • An inner peripheral surface 113 A of the support portion 107 in a region A 1 that faces the weight portion 105 extends in parallel with the centerline C.
  • An inner peripheral surface 113 B of the support portion 107 in a region A 2 that does not face the weight portion 105 is inclined so that the further the inner peripheral surface 113 B is away from the diaphragm portion 109 , the further the inner peripheral surface 113 B is apart from the centerline C.
  • FIG. 8 is a sectional view of a semiconductor sensor in a third embodiment of the present invention.
  • reference numerals obtained by adding 200 to the reference numerals used in the first embodiment are employed for components corresponding to those in the first embodiment, respectively.
  • the semiconductor sensor in this embodiment is also structured by a sensor body 201 alone.
  • an outer peripheral surface 205 a of a weight portion 205 centering on the centerline C, is inclined so that the further the outer peripheral surface 205 a is away from a diaphragm portion 209 , the closer the outer peripheral surface 205 a is to the centerline C.
  • An inner peripheral surface 213 A of a support portion 207 in the region A 1 that faces the weight portion 205 is inclined so that the further the inner peripheral surface 213 A is away from the diaphragm portion 209 , the further inner peripheral surface 213 A is apart from the centerline C.
  • An inner peripheral surface 213 B of the support portion 207 in a region A 2 that does not face the weight portion 205 extends in parallel with the centerline C.
  • wet etching is employed for etching applied to the region A 1
  • dry etching for etching applied to the region A 2 .
  • FIG. 9 is a sectional view of a semiconductor sensor in a fourth embodiment of the present invention.
  • reference numerals obtained by adding 300 to the reference numerals used in the first embodiment are employed for components corresponding to those in the first embodiment, respectively.
  • the semiconductor sensor in this embodiment is also structured by a sensor body 301 alone.
  • an outer peripheral surface 305 a of a weight portion 305 centering on the centerline C, is inclined so that the further the outer peripheral surface 305 a is away from a diaphragm portion 309 , the closer the outer peripheral surface 305 a is to the centerline C.
  • An inner peripheral surface 313 A of a support portion 307 in the region A 1 that faces the weight portion 305 is inclined so that the further the inner peripheral surface 313 A is away from the diaphragm portion 309 , the further the inner peripheral surface 313 A is apart from the centerline C.
  • An inner peripheral surface 313 B of the support portion 307 in the region A 2 that does not face the weight portion 305 is continuous with the inner peripheral surface 313 A, and is also inclined so that the further the inner peripheral surface 313 B is away from the diaphragm portion 309 , the further the inner peripheral surface 313 B is apart from the centerline C.
  • wet etching is employed for etching applied to the regions A 1 and A 2 .

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US12/158,138 2005-12-20 2006-12-20 Semiconductor sensor and manufacturing method of sensor body for semiconductor sensor Abandoned US20090289315A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005-366607 2005-12-20
JP2005366607 2005-12-20
PCT/JP2006/325345 WO2007072846A1 (ja) 2005-12-20 2006-12-20 半導体センサ及び半導体センサ用センサ本体の製造方法

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