US20090029046A1 - Substrate processing apparatus, method for processing substrate, and storage medium - Google Patents

Substrate processing apparatus, method for processing substrate, and storage medium Download PDF

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Publication number
US20090029046A1
US20090029046A1 US12/163,163 US16316308A US2009029046A1 US 20090029046 A1 US20090029046 A1 US 20090029046A1 US 16316308 A US16316308 A US 16316308A US 2009029046 A1 US2009029046 A1 US 2009029046A1
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Prior art keywords
processing
substrate
processing chamber
gas
main body
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US12/163,163
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English (en)
Inventor
Hiroyuki Kudoh
Hideto Mori
Shinji Okada
Toyohisa Tsuruda
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KUDOH, HIROYUKI, MORI, HIDETO, OKADA, SHINJI, TSURUDA, TOYOHISA
Publication of US20090029046A1 publication Critical patent/US20090029046A1/en
Priority to US13/218,983 priority Critical patent/US8992687B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Definitions

  • the present invention relates to a technique for performing predetermined substrate processing such as hydrophobic processing on a semiconductor device, a LCD (liquid crystal display) substrate, etc.
  • hydrophobic processing is performed on a substrate such as a semiconductor wafer (hereinafter referred to as a “wafer”) W.
  • This processing is performed to enhance the adhesion between a substrate film and a resist film before a resist liquid is applied to the wafer W.
  • HMDS hexamethyl disilazane
  • vapor is sprayed onto the front surface of the wafer W to form a thin film thereon so that the front surface property of the wafer W is changed from hydrophilicity to hydrophobicity.
  • the hydrophobic processing is preferably performed on the front surface of the wafer W and a beveled part (the end surface of an outer peripheral part).
  • the advantage of the hydrophobic processing is that the resist film is not easily peeled even when liquid immersion exposure processing is performed at a later process to expose light with water interposed between the wafer W and an exposure device.
  • the wafer W is conveyed into a processing chamber 10 composed of a container main body 11 and a cover body 12 and then mounted on a mounting board 13 (step S 11 ).
  • the wafer W is conveyed into an opening part formed when the cover body 12 is lifted up relative to the container main body 11 , and then the cover body 12 is lowered to make the container main body 11 and the cover body 12 come into contact with each other so as to close the opening part.
  • lifting pins 14 incorporated in the mounting board 13 are used.
  • the processing chamber 10 is hermetically sealed (step S 12 ). Because the emission of HMDS gas into a clean room causes particles or the HMDS reacts with the moisture in the air to cause ammonia that adversely affects the shape of a resist pattern, the processing chamber 10 is hermetically sealed to prevent the leakage of the HMDS gas. Specifically, in order to hermetically seal the processing chamber 10 , an exhaust passage 15 formed at a contact part between the container main body 11 and the cover body 12 is exhausted by an exhaust unit 16 for hermetic sealing so that the container main body 11 and the cover body 12 are closely attached to each other by suction. In FIG. 1 , reference numeral 15 a denotes a seal member provided around the exhaust passage 15 .
  • HMDS gas is supplied into the processing chamber 10 to perform the hydrophobic processing (step S 13 ).
  • a gas nozzle 17 is formed.
  • the HMDS gas is supplied into the processing chamber 10 in spray form from the gas nozzle 17 via a gas supply pipe 17 b and a gas supply passage 17 a formed in the cover body 12 .
  • the HMDS gas fills the processing chamber 10 in this manner so as to perform the hydrophobic processing.
  • the HMDS gas is dispersed into a gap formed between the container main body 11 and the side wall part of the mounting board 13 , movement areas of the lifting pins 14 formed in the mounting board 13 , and an enclosure 14 a covering the lifting areas of the lifting pins 14 formed below the mounting board 13 . Then, the HMDS gas is extruded from exhaust passages 18 connected to the gap and the enclosure 14 a and exhausted to outside of the processing chamber 10 . Note that the exhaust unit 19 connected to the exhaust passages 18 is not actuated in this process.
  • the HMDS gas is substituted for before the cover body 12 is opened (step S 14 ).
  • the purpose of the substitution processing is to prevent the emission of the HMDS gas from the processing chamber 10 .
  • N 2 (nitrogen) gas as substitution gas is supplied to the gas supply pipe 17 b , while the exhaust unit 19 is actuated.
  • the pressure inside the processing chamber 10 becomes negative.
  • the exhaust unit 19 is stopped to restore the pressure inside the processing chamber 10 to atmospheric pressure, while the exhaust unit 16 for hermetic sealing is stopped to open the processing chamber 10 (step S 15 ). Then, the cover body 12 is lifted up to open the processing chamber 10 , and the wafer W is taken out from the processing chamber 10 (step S 16 ).
  • the gas nozzle 17 is formed tapered to supply the HMDS gas or the N 2 gas in the processing chamber 10 , and the HMDS gas or the like is sprayed downward toward the wafer W in spray form from the gas nozzle 17 .
  • the degree of intensity in blowing the gas is different depending on an area, which easily causes air turbulence and generates a turbulent flow between the wafer W and the cover body 12 . This results in hindering the quick dispersion of the gas. Therefore, the substitution of the HMDS gas for the N 2 gas hardly advances, and thus the substitution processing takes much time.
  • Patent Document 1 proposes a configuration in which an upper constituent member and a lower constituent member are joined together without a clamp to maintain the air tightness of the processing chamber.
  • Patent Document 2 proposes a technique for supplying processing gas and substitution gas into the processing chamber via different passages. However, these techniques are not intended to perform the hydrophobic processing without hermetically sealing the processing chamber and thus do not solve the above problems.
  • the present invention has been made in light of the above circumstances and may prevent the leakage of gas from a processing chamber without hermetically sealing the processing chamber to reduce the spreading of the gas to the rear surface of a substrate.
  • a substrate processing apparatus comprising a container main body that has a mounting board for a substrate and the upper part of which container main body is open; a cover body that covers the container main body with the peripheral part of the cover body coming close to the peripheral part of the container main body via a gap or with the peripheral part of the cover body coming into contact with the peripheral part of the container main body, thereby forming a processing chamber for the substrate; a processing gas supply part that supplies processing gas from the central upper part of the processing chamber to the substrate on the mounting board; a processing gas exhaust passage that exhausts the processing chamber from the area outside of the substrate on the mounting board when the processing gas is supplied from the processing gas supply part into the processing chamber; a purge gas supply passage that is open between the peripheral part of the container main body and the peripheral part of the cover body along the circumferential direction of the container main body; an outflow passage that is formed along the circumferential direction of the processing chamber so that purge gas between the peripheral parts supplied from the purge gas supply passage
  • a supplied flow-rate of the processing gas from the processing gas supply part is less than an exhaust flow-rate in the processing gas exhaust passage, and the purge gas supplied from the purge gas supply passage is drawn into the processing chamber via the gas flowing gap due to a negative pressure inside the processing chamber caused by a difference between the flow rates.
  • the substrate processing apparatus may further comprise a buffer chamber that is provided so as to face the opening part of the purge gas supply passage along the circumferential direction of the processing chamber and temporarily accumulates the purge gas between the peripheral part of the container main body and the peripheral part of the cover body.
  • the outflow passage may be provided in the container main body or the cover body and open to the gas flowing gap.
  • the outflow passage may be provided in the container main body or the cover body and open to the gas flowing gap as well as to the buffer chamber.
  • the outflow passage may be a gap formed between the peripheral part of the container main body and the peripheral part of the cover body at a position outside of the opening part of the purge gas supply passage.
  • the processing gas exhaust passage may exhaust the processing chamber from an area above and outside of the substrate on the mounting board.
  • a method for processing a substrate comprises the steps of mounting a substrate on a mounting board that is provided inside a container main body the upper part of which container main body is open; forming a processing chamber for the substrate in such a manner that the container main body is covered with a cover body with the peripheral part of the cover body coming close to the peripheral part of the container main body via a gap or with the peripheral part of the cover body coming into contact with the peripheral part of the container main body; supplying processing gas to the substrate on the mounting board from the central upper part of the processing chamber; exhausting the processing chamber from the area outside of the substrate on the mounting board when the processing gas is supplied into the processing chamber; and supplying purge gas from a purge gas supply passage that is open between the peripheral part of the container main body and the peripheral part of the cover body along the circumferential direction of the container main body.
  • a supplied flow-rate of the processing gas into the processing chamber is made less than an exhaust flow-rate in the processing gas exhaust passage when the processing gas is supplied into the processing chamber so that the purge gas supplied from the purge gas supply passage is drawn into the processing chamber via a gas flowing gap formed from the opening part of the purge gas supply passage to the processing chamber along the circumferential direction of the processing chamber between the peripheral part of the container main body and the peripheral part of the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.
  • a storage medium having stored therein a computer program for use in a substrate processing apparatus that supplies processing gas to a substrate in a processing chamber.
  • the program contains a group of steps for executing the method for processing the substrate described above.
  • the supplied flow-rate of the processing gas into the processing chamber is made less than the exhaust flow-rate in the processing gas exhaust passage. Due to the negative pressure inside the processing chamber caused by the difference between the flow rates, purge gas is drawn into the processing chamber from the gap formed at the peripheral part of the processing chamber, thereby preventing the leakage of gas from the processing chamber. Furthermore, because the pressure inside the processing chamber is prevented from being negative due to the drawing of the purge gas into the processing chamber, the spreading of gas to the rear surface of a substrate is reduced.
  • FIG. 1 is a cross-sectional view showing a conventional hydrophobic processing apparatus
  • FIG. 2 is a process chart showing a conventional hydrophobic processing method
  • FIG. 3A is a cross-sectional view showing an embodiment of a hydrophobic processing apparatus according to the present invention.
  • FIG. 3B is a cross-sectional view showing the embodiment of the hydrophobic processing apparatus according to the present invention.
  • FIG. 4 is a perspective view showing a part of the hydrophobic processing apparatus
  • FIG. 5 is a process chart showing a hydrophobic processing method used in the hydrophobic processing apparatus
  • FIG. 6A is a process diagram showing the hydrophobic processing method used in the hydrophobic processing apparatus
  • FIG. 6B is a process diagram showing the hydrophobic processing method used in the hydrophobic processing apparatus
  • FIG. 7A is a process diagram showing the hydrophobic processing method used in the hydrophobic processing apparatus.
  • FIG. 7B is a process diagram showing the hydrophobic processing method used in the hydrophobic processing apparatus.
  • FIG. 8 is a partial cross-sectional view showing the flow of gas in the hydrophobic processing apparatus
  • FIG. 9 is a partial cross-sectional view showing another example of the hydrophobic processing apparatus.
  • FIG. 10 is a plan view showing a resist pattern forming apparatus incorporating the hydrophobic processing apparatus
  • FIG. 11 is a perspective view showing the resist pattern forming apparatus
  • FIG. 12 is a cross-sectional view showing the resist pattern forming apparatus
  • FIG. 13A is a characteristic diagram showing the measurement data of contact angles on the rear surface of a wafer W, which are obtained to confirm the effect of the present invention
  • FIG. 13B is a characteristic diagram showing the measurement data of the contact angles on the rear surface of the wafer W, which are obtained to confirm the effect of the present invention
  • FIG. 14A is a characteristic diagram showing the measurement data of the contact angles on the rear surface of a wafer W, which are obtained to confirm the effect of the present invention.
  • FIG. 14B is a characteristic diagram showing the measurement data of the contact angles on the rear surface of a wafer W, which are obtained to confirm the effect of the present invention.
  • FIGS. 3A and 3B are vertical cross-sectional views of the hydrophobic processing apparatus.
  • the hydrophobic processing apparatus has a container main body 2 the upper part of which is open and a cover body 3 provided to cover the upper opening of the container main body 2 .
  • the container main body 2 has a side wall part 21 , a bottom wall part 22 , and a mounting board 4 for the wafer W provided to be supported on the bottom wall part 22 .
  • the bottom wall part 22 is formed up to an area where the peripheral part of the mounting board 4 is supported, and the mounting board 4 serves also as a part of the container main body 2 .
  • the bottom wall part 22 may be configured to support the entire rear surface of the mounting board 4 so that the container main body 2 is composed of the side wall part 21 and the bottom wall part 22 .
  • a heating unit (not shown) is provided inside the mounting board 4 .
  • the cover body 3 has a side wall part 31 and an upper wall part 32 .
  • the container main body 2 is covered with the cover body 3 so that the lower surface of the side wall part 31 serving as the peripheral part of the cover body 3 comes close to the upper surface of the side wall part 21 serving as the peripheral part of the container main body 2 via a gap G. Accordingly, the opening on the side of the upper part of the container main body 2 is closed by the cover body 3 to form a processing chamber 20 between them.
  • the gap G refers to a gap of about 0.5 mm through 2 mm formed between a part near the outer edge of the upper surface of the side wall part 21 of the container main body 2 and a part near the outer edge of the lower surface of the side wall part 31 of the cover body 3 .
  • the size in the height direction of the processing chamber 20 thus formed, i.e., a distance L 1 (see FIG. 4 ) between the front surface of the mounting board 4 and the lower surface of the upper wall part 32 is, for example, about 3 mm through 10 mm.
  • plural lifting pins 41 are provided to transfer the wafer W to and from an outer conveying unit (not shown).
  • the lifting pins 41 are configured to be freely lifted up and down by a lifting mechanism 42 .
  • reference numeral 43 denotes a cover that is provided on the rear surface of the mounting board 4 to surround the periphery of the lifting mechanism 42 .
  • the container main body 2 and the cover body 3 are configured to be freely lifted up and down relative to each other.
  • the cover body 3 is configured to be freely lifted up and down between a processing position at which the cover body 3 is connected to the container main body 2 and a substrate conveying position located on the upper side of the container main body 2 .
  • a processing gas supply part 5 is provided at, for example, the central part on the rear surface side of the cover body 3 so that processing gas is supplied from the central upper part of the processing chamber to the substrate on the mounting board 4 .
  • the processing gas supply part 5 is formed in a substantially trapezoidal shape the lower side of which is narrow in vertical cross section.
  • the processing gas supply part 5 is of a tapered cylinder shape whose lower end surface is smaller than the upper end surface and has a substantially vertical gas passage 51 .
  • multiple gas supply holes 52 having a diameter of, for example, about 0.5 mm through 0.2 mm are formed at predetermined intervals around the entire circumference of the side surface.
  • a gas supply passage 33 connected to the gas passage 51 of the processing gas supply part 5 is formed.
  • the gas supply passage 33 is formed so as to be bent on the upper side of the cover body 33 and extended in the substantially horizontal direction.
  • the upstream end of the gas supply passage 33 is connected to both a supply source 62 of HMDS gas as hydrophobic processing gas and a supply source 63 of N 2 gas as substitution gas via the gas supply pipe 61 .
  • the gas supply pipe 61 is provided with a first flow-rate regulation valve V 1 that regulates the flow rate of supplied HMDS gas between the supply source 62 of HMDS gas and the gas supply passage 33 and provided with a second flow-rate regulation valve V 2 that regulates the flow rate of supplied N 2 between the supply source 63 of N 2 gas and the gas supply passage 33 .
  • the flow-rate regulation valves V 1 and V 2 have an opening/closing function and a flow-rate regulating function. Through the flow-rate regulation valves V 1 and V 2 , the gas supplied to the gas supply passage 33 is switched between HMDS gas and N 2 gas and each gas is supplied to the processing chamber 20 with its flow rate regulated.
  • a buffer chamber 7 is formed along the circumferential direction of the processing chamber 20 .
  • the buffer chamber 7 is formed as an annular successive space for surrounding the wafer W mounted in the processing chamber 20 between the upper surface of the side wall part 21 of the container main body 2 and the lower surface of the side wall part 31 of the cover body 3 .
  • N 2 gas as purge gas is supplied via purge gas supply passages 71 and temporarily accumulated.
  • the purge gas supply passages 71 have a diameter of, for example, about 0.5 mm through 2 mm and formed to be a substantially vertical so as to pass through the side wall part 21 of the container main body 2 .
  • multiple purge gas supply passages 71 are formed to be annularly arranged along the circumferential direction of the container main body 2 so that the downstream ends of the purge gas supply passages 71 are open to the buffer chamber 7 . In this manner, the purge gas supply passages 71 are configured to be open between the peripheral part of the container main body 2 and that of the cover body 3 along the circumferential direction of the processing chamber 20 .
  • annular successive gas supply chamber 72 is provided so as to be connected to the upstream ends of the purge gas supply passages 71 along the circumferential direction of the container main body 2 .
  • the supply source (substitution gas supply part) 63 of N 2 gas as purge gas is connected to the gas supply chamber 72 via a purge gas supply pipe 73 provided with the third flow-rate regulation valve V 3 .
  • the supply part that supplies purge gas is common to the one that supplies N 2 gas to the processing gas supply part 5 , but different supply parts that supply the purge gas and the N 2 gas, respectively, may be provided.
  • a purge gas supply hole 74 that supplies the purge gas inside the buffer chamber 7 to the processing chamber 20 is in communication with the buffer chamber 7 and formed in the buffer chamber 7 along its circumferential direction.
  • the purge gas supply hole 74 corresponds to a gas flowing gap formed from the opening parts of the purge gas supply passages 71 to the processing chamber 20 along the circumferential direction of the processing chamber 20 .
  • the purge gas supply hole 74 is the gap G formed between the upper surface of the side wall part 21 of the container main body 2 and the lower surface of the side wall part 31 of the cover body 3 .
  • the purge gas supply hole 74 is formed in a successive slit shape and has a size L 2 of, for example, about 1 mm through 3 mm in the height direction (see FIG. 4 ).
  • the position in the height direction of the peripheral part of the container main body 2 is slightly (for example, about 1 mm through 3 mm) higher than the front surface of the wafer W on the mounting board 4 . Therefore, the position in the height direction of the purge gas supply hole 74 is also slightly higher than the front surface of the wafer W on the mounting board 4 .
  • the cover body 3 has exhaust passages 81 that exhaust the processing chamber 20 from a position outside the wafer W on the mounting board 4 when processing gas is supplied into the processing chamber 20 from the processing gas supply part 5 .
  • the exhaust passages 81 have a diameter of, for example, about 1 mm through 2 mm and are annularly formed at uniform intervals along the circumferential direction of the cover body 3 so that their upstream ends are open outside of the wafer W on the mounting board 4 , for example, so that the upstream ends are open to the purge gas supply hole 74 in the side wall part 31 .
  • a distance between the opening part of the exhaust passage 81 and the outer edge of the wafer W on the mounting board 4 is preferably, for example, about 20 mm through 40 mm.
  • an extremely flat cavity part 82 that extends to an area other than the central area where the processing gas supply part 5 is provided in a planar shape, has a ring shape in a plane shape, and has a thickness of about 1 mm through 3 mm.
  • the downstream ends of the exhaust passages 81 are connected to the cavity part 82 .
  • plural, for example, six exhaust pipes 83 are connected to the cavity part 82 at an area near the center of the cover body 3 , and the downstream ends of the exhaust pipes 83 are connected to an ejector serving as an exhaust unit 84 via an exhaust flow-rate regulation valve V 4 .
  • reference numerals 83 a denote exhaust ports connected to the exhaust pipes 83 .
  • a processing gas exhaust passage is composed of the exhaust passages 81 and the cavity part 82 formed in the cover body 3 .
  • outflow passages 75 extending upward so as to pass through the cover body 3 from the buffer chamber 7 are provided at uniform intervals, for example, along the circumferential direction of the processing chamber 20 .
  • the outflow passages 75 are formed to eject to the outside of the processing chamber 20 the purge gas supplied between the peripheral part of the container main body 2 and that of the cover body 3 from the purge gas supply passages 71 .
  • the hydrophobic processing apparatus is configured to be controlled by a control unit 9 .
  • the control unit 9 is, for example, a computer and has a program, a memory, and a CPU.
  • the program has embedded therein commands (steps) that send a control signal from the control unit 9 to each unit of the hydrophobic processing apparatus to advance predetermined hydrophobic processing.
  • the program is stored in a computer storage medium such as a flexible disk, a compact disk, a hard disk, and a MO (magnetooptic) disk, and it is installed in the control unit 9 .
  • the program contains steps that control a lifting mechanism 23 for the cover body 3 , the exhaust unit 84 , the flow-rate regulation valves V 1 , V 2 , and V 3 , and the exhaust flow-rate regulation valve V 4 .
  • the driving of the lifting mechanism 23 and the exhaust unit 84 as well as the opening degrees of the valves V 1 through V 4 are controlled.
  • the supplied flow-rate of HMDS gas or N 2 gas from the processing gas supply part 5 is made less than the exhaust flow-rate in the processing gas exhaust passage.
  • the process recipe of target hydrophobic processing is selected by the control unit 9 .
  • the control unit 9 outputs a control signal to each unit of the hydrophobic processing apparatus based on the process recipe.
  • the predetermined hydrophobic processing is performed on the wafer W.
  • the wafer W is conveyed into the processing chamber from the opening part thus formed (step S 1 ) and then mounted on the mounting board 4 through a cooperative operation by the outer conveying unit (not shown) and the lifting pins 41 .
  • the cover body 3 is lowered to the processing position to form the processing chamber 20 .
  • HMDS gas is supplied into the processing chamber 20 to perform the hydrophobic processing (step S 2 ).
  • the wafer W is heated, for example, to 90° C. by the heating unit incorporated in the mounting board 4 , while the first flow-rate regulation valve V 1 is opened to a predetermined opening degree to supply HMDS gas into the processing chamber 20 at a flow rate of, for example, about 3000 ccm.
  • each of the third flow-rate regulation valve V 3 and the exhaust flow-rate regulation valve V 4 is opened to a predetermined opening degree, while the exhaust unit 84 is actuated to exhaust the processing chamber 20 , for example, at an exhaust flow-rate of about 5000 ccm through 15000 ccm from the processing gas exhaust passage.
  • the introduction of the HMDS gas into the processing chamber 20 , the introduction of purge gas into the buffer chamber 7 , and the exhausting of the processing chamber 20 are performed while the first flow-rate regulation valve V 1 and the exhaust flow-rate regulation valve V 4 are controlled.
  • the HMDS gas fills the processing chamber 20 to perform the hydrophobic processing on the wafer W for about 30 seconds.
  • the supplied flow-rate of the purge gas is preferably about 5000 ccm through 15000 ccm.
  • N 2 gas is supplied into the processing chamber 20 to perform the substitution processing (step S 3 ). That is, the first flow-rate regulation valve V 1 is closed and the second flow-rate regulation valve V 2 is opened to a predetermined degree so that the N 2 gas is supplied into the processing chamber 20 , for example, at a flow rate of about 3000 ccm through 10000 ccm.
  • the third flow-rate regulation valve V 3 , the exhaust flow-rate regulation valve V 4 , and the exhaust unit 84 are operated as in the case of the hydrophobic processing.
  • the introduction of the N 2 gas into the processing chamber 20 , the introduction of purge gas into the buffer chamber 7 , and the exhausting of the processing chamber 20 are performed while the second flow-rate regulation valve V 2 and the exhaust flow-rate regulation valve V 4 are controlled. Under these conditions, the substitution processing is performed for about 10 seconds. In this case, the flow rate of the purge gas introduced into the buffer chamber 7 is the same as the flow rate during the hydrophobic processing.
  • the flow-rate regulation valves V 2 , V 3 and the exhaust flow-rate regulation valve V 4 are closed, while the exhaust unit 84 is stopped. Then, the cover body 3 is lifted up to the substrate conveying position, and the wafer W is taken out (see FIG. 7B , step S 4 ).
  • HMDS gas is supplied from the processing gas supply part 5 .
  • the HMDS gas is supplied above the central part of the wafer W on the mounting board 4 and exhausted from the exhaust passages 81 open at an area above and outside of the wafer W and inside of the buffer chamber 7 . Therefore, the HMDS gas is dispersed from the central part to the outer edge part on the side above the wafer W and fills the processing chamber 20 . In this manner, the hydrophobic processing is performed on the areas such as the front surface and the outer edge of the wafer W where the HMDS gas contacts.
  • the purge gas is supplied from the purge gas supply passages 71 to the buffer chamber 7 .
  • each of the first flow-rate rregulation valve V 1 and the exhaust flow-rate regulation valve V 4 is controlled in order to make the exhaust flow-rate in the processing gas exhaust passage greater than the supplied flow-rate of the HMDS gas from the processing gas supply part 5 in the processing chamber 20 . Therefore, the pressure inside the processing chamber 20 becomes negative due to the difference between the supplied flow-rate of the HMDS gas and the exhaust flow-rate.
  • the purge gas in the buffer chamber 7 is drawn into the periphery of the processing chamber 20 via the purge gas supply hole 74 due to the negative pressure inside the processing chamber 20 .
  • the purge gas is drawn from the purge gas supply hole 74 into the periphery of the processing chamber 20 at all times and exhausted via the exhaust passages 81 together with the HMDS gas.
  • the outflow passages 75 are formed in the buffer chamber 7 . Therefore, when the supplied flow-rate of the purge gas into the buffer chamber 7 is excessive, the purge gas is ejected from the outflow passages 75 to maintain the pressure inside the processing chamber 20 at almost atmospheric pressure. Note that the purge gas ejected from the outflow passages 75 is exhausted to outside of the apparatus via an exhaust passage provided in a housing (not shown) in which the hydrophobic processing apparatus is accommodated. In order to supply the purge gas from the buffer chamber 7 into the processing chamber 20 at all times, it is necessary to make the supplied flow-rate of the purge gas into the buffer chamber 7 greater than the drawn flow-rate of the purge gas drawn from the buffer chamber 7 into the processing chamber 20 .
  • the supplied flow-rate of the purge gas is set in consideration of the supplied flow-rate of the HMDS gas into the processing chamber 20 and the exhaust flow-rate in the processing chamber 20 .
  • the supplied flow-rate of the purge gas into the buffer chamber 7 is excessive, it does not much matter because the purge gas is ejected from the outflow passages 75 to the outside of the processing chamber 20 .
  • the flow of N 2 gas during the substitution processing is similar to that of the HMDS gas during the hydrophobic processing, and the exhaust flow-rate in the processing gas exhaust passage is made greater than the supplied flow-rate of the N 2 gas from the processing gas supply part 5 . Therefore, the purge gas in the buffer chamber 7 is drawn into the periphery of the processing chamber 20 due to the negative pressure inside the processing chamber 20 caused by the difference between the supplied flow-rate of the N 2 gas and the exhaust flow-rate and then exhausted via the exhaust passages 81 together with the N 2 gas. Furthermore, the excessive purge gas in the buffer chamber 7 is ejected to the outside of the processing chamber 20 via the outflow passages 75 . Thus, the pressure inside the processing chamber 20 is maintained at almost atmospheric pressure.
  • the purge gas is thus drawn into the periphery of the processing chamber 20 from the gap (purge gas supply hole 74 ) formed along the circumferential direction of the processing chamber 20 between the peripheral part of the container main body 2 and that of the cover body 3 during the hydrophobic processing and the substitution processing. Therefore, as viewed from the inner side of the processing chamber 20 , the airflow of the purge gas is introduced from the gap between the container main body 2 and the cover body 3 at the periphery of the processing chamber 20 at all times so as to surround the processing chamber 20 , thereby generating the air curtain of the purge gas.
  • the air curtain hinders the HMDS gas and the N 2 gas in the processing chamber 20 from entering the gap between the container main body 2 and the cover body 3 , thus preventing the leakage of the HMDS gas or the like to the outside of the processing chamber 20 . Therefore, the leakage of the gas in the processing chamber 20 through the gap between the container main body 2 and the cover body 3 is prevented without sealing the processing chamber 20 .
  • the mechanism of sealing the processing chamber 20 is not required, and only one exhaust unit is used.
  • the number of components used such as constituent components and utility components is reduced to make the cost of the components inexpensive.
  • the simplification of the structure can be attained, the assembling operation of the apparatus becomes easy.
  • the structure of the apparatus is simplified, an error in assembling the apparatus is not easily caused. Therefore, an operation for adjusting the error and an inspection process and a management process to determine the presence or absence of error in assembling the apparatus can also be simplified. As a result, the burden on an operator can be reduced. In addition, energy costs can be reduced along with the elimination of the mechanism for sealing the processing chamber 20 .
  • a step for the hydrophobic processing is performed in the order of “the wafer W is conveyed into the processing chamber 20,” “hydrophobic processing,” “substitution processing,” and “the wafer W is taken out from the conveying chamber 20,” which can reduce the number of processing steps. Accordingly, total processing time can be reduced compared with conventional methods, and throughput can be enhanced.
  • the outflow passages 75 are provided in the buffer chamber 7 .
  • the exhaust flow-rate in the processing gas exhaust passage is made greater than the supplied flow-rate of the HMDS gas into the processing chamber 20 and the supplied flow-rate of the purge gas into the buffer chamber 7 is made greater than the flow rate of the purge gas drawn from the buffer chamber 7 into the periphery of the processing chamber 20 .
  • the purge gas is supplied from the buffer chamber 7 into the periphery of the processing chamber 20 so that the pressure inside the processing chamber 20 automatically becomes atmospheric pressure, thereby making it easy to perform pressure control for maintaining the pressure inside the processing chamber 20 at atmospheric pressure.
  • the pressure inside the processing chamber 20 is prevented from being negative during the hydrophobic processing and the substitution processing. Therefore, the occurrence of a phenomenon in which the HMDS gas spreads to the rear surface of the wafer W can be prevented. As a result, the hydrophobic processing on the rear surface of the wafer W is prevented. Accordingly, because the hydrophobic processing on the rear surface of the wafer W is prevented, the rear surface can be quickly cleansed by paint thinner in a step for removing a stain from the rear surface of the wafer W after the application of a resist liquid. As a result, the step can be performed simply.
  • the exhaust passages 81 are formed so as to be open in the cover body 3 above the outer edge of the wafer W. Therefore, in the processing chamber 20 , the HMDS gas flows from the central part of the wafer W to the outer edge part thereof above the wafer W and then further moves up via the exhaust passages 81 inside of the buffer chamber 7 . As described above, in the processing chamber 20 , the gas flows from the central part of the wafer W to the outer edge part thereof and then further moves upward. Therefore, the gas hardly flows toward the rear surface of the wafer W. As a result, in this respect also, the occurrence of a phenomenon in which the HMDS gas spreads to the rear surface of the wafer W can be prevented.
  • the processing gas exhaust passage has the upstream ends opened outside of and above the wafer W on the mounting board 4 , is formed to be bent and extended in the cover body 3 , and is connected to the exhaust pipes 83 provided near the central part of the cover body 3 .
  • the processing gas exhaust passage can be made long. Therefore, the gas can be exhausted more uniformly.
  • the purge gas is temporarily accumulated in the ring-shaped gas supply chamber 72 and then supplied from the gas supply chamber 72 into the buffer chamber 7 via the purge gas supply passages 71 provided at the upper part of the gas supply chamber 72 along the circumferential direction. Accordingly, the purge gas in the gas supply chamber 72 is uniformly supplied into the buffer chamber 7 in the circumferential direction via the purge gas supply passages 71 . Therefore, the purge gas is drawn into the periphery of the processing chamber 20 at an almost uniform supplied flow-rate from the purge gas supply hole 74 to the circumference of the processing chamber 20 .
  • the HMDS gas and the N 2 gas supplied from the processing gas supply part 5 are supplied into the processing chamber 20 via the gas supply holes 52 provided in the circumferential direction of the processing gas supply part 5 . Therefore, the HMDS gas and the N 2 gas are supplied in such a manner as to be slowly dispersed from the central part of the processing chamber 20 to the peripheral part thereof while being fed from the gas supply holes 52 .
  • the gas is quickly dispersed from the central part of the processing chamber 20 to the peripheral part thereof.
  • the HMDS gas and the N 2 gas spread in the processing chamber 20 more uniformly, and a nonuniform concentration of the HMDS gas hardly occurs in the plane of the wafer W during the hydrophobic processing.
  • the hydrophobic processing having high in-plane uniformity can be performed.
  • the HMDS gas is quickly substituted for the N 2 gas, and nonuniform progression degree of the substitution processing hardly occurs in the plane of the wafer W. As a result, the time required for the substitution processing can be reduced.
  • the processing chamber 20 becomes deformed for some reasons during its usage, thereby making the gap G at the peripheral part of the processing chamber 20 nonuniform in the circumferential direction.
  • the position of the opening parts of the exhaust passages 81 outside of the processing chamber 20 are formed near the buffer chamber 7 of the side wall part 31 of the cover body 3 so as to make the distance between the opening parts of the exhaust passages 81 and the outer edge of the wafer W as small as possible.
  • the opening parts of the exhaust passages 81 outside of the processing chamber 20 may only be positioned outside of the wafer W mounted in the processing chamber 20 as well as inside the purge gas supply passages 71 .
  • the opening parts may be formed at the upper wall part 32 of the cover body 3 .
  • FIGS. 10 and 11 are a plan view of the system and a perspective view thereof, respectively.
  • the apparatus is provided with a carrier block S 1 , where a transferring arm C not only takes out the wafer W from a hermetically-sealed carrier 100 mounted on the mounting board 101 and transfers it to a processing block S 2 adjacent to the block S 1 , but also receives the wafer W processed by the processing block S 2 and returns it to the carrier 100 .
  • the processing block S 2 has a first block (DEV layer) B 1 that performs a development process, a second block (BCT layer) B 2 that performs a forming process for a reflection preventing film to be formed on the lower layer side of a resist film, a third block (COT layer) B 3 that performs a coating process for a resist liquid, and a fourth block (TCT layer) B 4 that performs a forming process for a reflection preventing film to be formed on the upper layer side of the resist film.
  • DEV layer first block
  • BCT layer second block
  • COT layer that performs a coating process for a resist liquid
  • TCT layer fourth block
  • These blocks are laminated together in the processing blocks S 2 in an ascending order from the first block (DEV layer) B 1 , the second block (BCT layer) B 2 , the third block (COT layer) B 3 , and the fourth block (TCT layer) B 4 .
  • Each of the second block (BCT layer) B 2 and the fourth block (TCT layer) B 4 has a coating unit that coats a chemical solution for forming the reflection preventing film using a spin-coating process, a heating-and-cooling processing unit group that performs pre-processing and post-processing for the processing performed in the coating unit, and conveying arms A 2 and A 4 (see FIG. 12 ) that transfer the wafer W between the coating unit and the heating-and-cooling process unit group.
  • the third block (COT layer) B 3 uses a resist liquid as the chemical solution and has the same configuration as those of the second and fourth blocks except that it incorporates the hydrophobic processing apparatus.
  • the processing block (DEV layer) B 1 has the two-tiered development units 102 , for example, in its single layer.
  • the DEV layer B 1 is provided with a common conveying arm A 1 that conveys the wafer W to the two-tiered development units 102 .
  • the processing block S 2 is further provided with a shelf unit US, and the wafer W is conveyed between the components of the shelf unit US via a transferring arm D 1 that is provided near the shelf unit US and can be freely lifted up and down.
  • the wafer W from the carrier block S 1 is successively conveyed into one transferring unit of the shelf unit US, for example, a corresponding transferring unit CPL 2 of the second block (BCT layer) B 2 via a transferring arm C. Then, the wafer W is conveyed into the third block (COT layer) B 3 via the transferring unit CPL 3 and the conveying arm A 3 .
  • the hydrophobic processing is performed on the front surface of the wafer W to have a resist film formed thereon.
  • the wafer W on which the resist film is formed is transferred to a transferring unit BF 3 of the shelf unit U 5 by the conveying arm A 3 .
  • the wafer W is transferred to a conveying arm A 4 via the transferring unit BF 3 , the transferring arm D 1 , and a transferring unit CPL 4 in this order.
  • the wafer W is transferred to a transferring unit TRS 4 by the conveying arm A 4 .
  • the reflection preventing film may be formed in the second block (BCT layer) B 2 .
  • a shuttle arm E as a dedicated conveying unit is provided to directly convey the wafer W from the transferring unit CPL 11 provided in the shelf unit U 5 to the transferring unit CPL 12 provided in the shelf unit U 6 .
  • the wafer W on which the resist layer and the reflection preventing film are formed is transferred to the transferring unit CPL 11 by the transferring arm D 1 via the transferring units BF 3 and TRS 4 .
  • the wafer W is directly conveyed into the transferring unit CPL 12 of a shelf unit U 6 and then taken into an interface block S 3 .
  • the transferring units as denoted by “CPL” serve also as cooling units for temperature regulation and those denoted by “BF” serve also as buffer units on which plural of the wafers W can be mounted.
  • the wafer W is conveyed into the exposure device S 4 by an interface arm B.
  • the wafer W is mounted on a transferring unit TRS 6 of the shelf unit U 6 and returned to the processing block S 2 .
  • the returned wafer W is developed in the first block (DEV layer) B 1 , conveyed to a transferring board within an access range of the transferring arm C in the shelf unit U 5 by the conveying arm A 1 , and returned to the carrier 100 via the transferring arm C. Note that in FIG.
  • examples of the processing gas supplied from the processing gas supply part 5 into the processing chamber 20 include substitution gas other than HMDS gas.
  • the processing chamber 20 may be formed in such a manner that the opening on the upper side of the container main body 2 is covered with the cover body 3 so that the peripheral part of the container main body 2 and that of the cover body 3 come into contact with each other.
  • the buffer chamber 7 may be formed on the side of the container main body 2 so long as it is provided to face the opening parts of the purge gas supply passages 71 along the circumferential direction of the processing chamber 20 at the peripheral parts of the container main body 2 and the cover body 3 .
  • the shape of the buffer chamber 7 is not limited to the above example so long as the buffer chamber 7 is configured to temporarily accumulate purge gas.
  • the purge gas supply passages 71 may be provided between the peripheral part of the container main body 2 and that of the cover body 3 so as to be open along the circumferential direction of the processing chamber 20 , whereby a gap for flowing gas is formed from the opening parts of the purge gas supply passages 71 to the inside of the processing chamber 20 along the circumferential direction of the processing chamber 20 .
  • the outflow passages 75 for purge gas are only required to be provided in the container main body 2 or the cover body 3 and open to the gap for flowing the gas, and it may be a gap formed between the peripheral part of the container main body 2 and that of the cover body 3 at the position outside of the opening parts of the purge gas supply passages 71 .
  • the supplied flow-rate of processing gas from the processing gas supply part 5 may be regulated by a mass flowmeter, and the exhaust flow-rate in the processing gas exhaust passage may be controlled by the output of the exhaust unit 84 .
  • both of the supplied flow-rate of the processing gas and the supplied flow-rate in the processing gas exhaust passage may be controlled, or the supplied flow-rate of the processing gas may be controlled with the exhaust flow-rate in the processing gas exhaust passage being constant.
  • the present invention can be applied to substrate processing for an oven that performs processing at a low oxygen concentration other than the hydrophobic processing. Furthermore, the present invention can be applied to processing for a LCD substrate, a mask substrate, etc., other than the semiconductor wafer W.
  • the wafer W is conveyed into the hydrophobic processing apparatus and then subjected to hydrophobic processing for 30 minutes on the conditions that the flow rate of HMDS gas is 3000 ccm, the temperature of the wafer W is 90° C., the exhaust flow-rate in the processing gas exhaust passages is 10000 ccm, and the flow rate of purge gas is 10000 ccm.
  • the wafer W is subjected to substitution processing for 10 minutes on the conditions that the flow rate of N 2 gas is 5000 ccm, the exhaust flow-rate in the processing gas exhaust passages is 10000 ccm, and the flow rate of purge gas is 10000 ccm, and then it is taken out.
  • the contact angles of two wafers W 1 and W 2 are measured to evaluate whether the rear surfaces of the wafers W 1 and W 2 have been subjected to the hydrophobic processing.
  • a DropMaster 500R manufactured by KYOWA INTERFACE SCIENCE, CO., LTD.
  • pure water and cyclohexanone are used as a measurement solvent.
  • the measurement of the contact angles is conducted with respect to 31 points on a first line passing through the center of the wafer W and a notch and located inside 5 mm away from the outer edge of the wafer W, and 31 points on a second line passing through the center of the wafer W orthogonal to the first line and located inside 5 mm away from the outer edge of the wafer W.
  • the contact angle of an area of the wafer W that has not been subjected to the hydrophobic processing approximates zero degrees, while that of an area of the wafer W that has been subjected to the hydrophobic processing increases.
  • FIGS. 13A and 13B show the measurement data of the contact angles when pure water is used as the measurement solvent
  • FIGS. 14A and 14B show the data measured along the second line
  • FIGS. 13B and 14B show the data measured along the first line.
  • a symbol “ ⁇ ” denotes the measurement data of the wafer W 1
  • a symbol “ ⁇ ” denotes the measurement data of the wafer W 2
  • a symbol “ ⁇ ” denotes the measurement data of the wafer WO that has not been subjected to the hydrophobic processing.
  • the measurement data show that the contact angles of the wafer W 1 and the wafer W 2 are greater than the contact angle of the wafer W 3 that has not been subjected to the hydrophobic processing at the area located inside about 10 mm away from the outer edge of the wafer, while the measurement data show that the contact angles of the wafer W 1 and the wafer W 2 are almost the same as the contact angle of the wafer W 3 at the area located further inside the area about 10 mm away from the outer edge of the wafer.
  • the hydrophobic processing has been performed at the area located inside about 10 mm away from the outer edge of the wafer, while the hydrophobic processing has not been performed at the area located further inside the area about 10 mm away from the outer edge of the wafer.
  • the hydrophobic processing on the rear surface of the wafer W due to HMDS gas largely spread thereto is prevented. Furthermore, on the rear surface of the wafer W, the area located inside about 10 mm away from its outer edge is subjected to the hydrophobic processing, but no problems arise in the subsequent process for cleansing the rear surface to such an extent.

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KR100984565B1 (ko) 2010-02-08 2010-09-30 주식회사 가소닉스 분말형 원자층 증착을 위한 고정장치 및 이를 이용한 초소수성 분말의 제조방법
US20110223334A1 (en) * 2010-03-12 2011-09-15 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
US9175394B2 (en) * 2010-03-12 2015-11-03 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
US20130206066A1 (en) * 2012-01-26 2013-08-15 Samsung Electronics Co., Ltd. Thin film deposition apparatus
US9269564B2 (en) * 2012-01-26 2016-02-23 Samsung Electronics Co., Ltd. Thin film deposition apparatus
US10480073B2 (en) * 2013-04-07 2019-11-19 Shigemi Murakawa Rotating semi-batch ALD device
CN111048438A (zh) * 2018-10-11 2020-04-21 Tes股份有限公司 气体供给单元
US11302526B2 (en) * 2019-01-14 2022-04-12 Samsung Electronics Co., Ltd. Supercritical drying apparatus and method of drying substrate using the same
EP4156236A1 (en) * 2021-09-24 2023-03-29 Kokusai Electric Corp. Substrate processing apparatus, cleaning method, and method of manufacturing semiconductor device

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TW200917406A (en) 2009-04-16
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TWI379370B (en) 2012-12-11
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CN101359590B (zh) 2010-08-18
KR20090012049A (ko) 2009-02-02
US8992687B2 (en) 2015-03-31
KR101197813B1 (ko) 2012-11-05
US20110308464A1 (en) 2011-12-22

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