US20080317973A1 - Diffuser support - Google Patents

Diffuser support Download PDF

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Publication number
US20080317973A1
US20080317973A1 US11/767,307 US76730707A US2008317973A1 US 20080317973 A1 US20080317973 A1 US 20080317973A1 US 76730707 A US76730707 A US 76730707A US 2008317973 A1 US2008317973 A1 US 2008317973A1
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US
United States
Prior art keywords
diffuser
backing plate
support member
coupled
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/767,307
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English (en)
Inventor
John M. White
Robin L. Tiner
Yeh Kurt Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/767,307 priority Critical patent/US20080317973A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, YEH KURT, WHITE, JOHN M, TINER, ROBIN L
Priority to JP2008158915A priority patent/JP5215055B2/ja
Priority to KR1020080057715A priority patent/KR101016860B1/ko
Priority to TW097123127A priority patent/TWI389172B/zh
Priority to CN2011101921429A priority patent/CN102251227B/zh
Priority to CN2008101269486A priority patent/CN101333651B/zh
Publication of US20080317973A1 publication Critical patent/US20080317973A1/en
Priority to US12/749,172 priority patent/US9580804B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Definitions

  • Embodiments of the present invention generally relate to apparatus and methods for supporting a gas distribution plate or diffuser.
  • substrates in which flat panel displays are made from have increased dramatically in size over recent years.
  • a substrate which is typically divided to make a plurality of TFT-LCD flat panel displays had sizes of about 2,000 cm 2 and have increased in size to about 25,000 cm 2 or larger.
  • Such substrates are typically processed in a plasma chamber having a diffuser.
  • the diffuser is generally supported in a spaced-apart relation facing the substrate with a plurality of gas passageways adapted to disperse one or more process gases toward the substrate to perform a process to the substrate, such as deposition or etch.
  • This increase in substrate size has brought an increase in diffuser size since the diffuser is approximately the size of the substrate.
  • Embodiments of gas distribution apparatus comprise a diffuser support member coupled to a diffuser and moveably disposed through a backing plate. Certain embodiments of gas distribution apparatus further comprise a chamber body including a bottom and walls. The backing plate is disposed over the chamber body. A chamber interior volume is bounded by the chamber body and the backing plate. The diffuser is disposed within the chamber interior volume. Other embodiments of gas distribution apparatus further comprise variable spacing between the backing plate and the diffuser.
  • Embodiments of methods of processing a substrate on a substrate receiving surface of a substrate support comprise providing a diffuser within a chamber interior volume bounded by a chamber body and a backing plate.
  • a diffuser support member supports the diffuser and is moveably disposed through the backing plate.
  • a vacuum pressure is applied within the chamber interior volume in which the backing plate flexes in response to the vacuum pressure.
  • the diffuser support member is coupled to a structure outside of the chamber interior volume.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of a diffuser supported in a chamber.
  • FIG. 2 is a top isometric view of the frame structure of FIG. 1 .
  • FIG. 3 is an enlarged schematic cross-sectional view of diffuser support member, the backing plate, and the diffuser of the chamber of FIG. 1 in which the backing plate is flexed.
  • FIGS. 4A-4E show various embodiments of sealing devices associated with the diffuser support members to providing a vacuum seal of the openings of the backing plate.
  • FIG. 5 is a cross-section view of one embodiment of a diffuser support member coupled to a diffuser through a mating mechanism coupled to the diffuser.
  • FIG. 6A is a cross-section view of one embodiment of an insulative sleeve disposed at least partially around a diffuser support member.
  • FIG. 6B is a cross-sectional view of one embodiment of a dielectric break to electrically isolate a frame structure from a diffuser support member or reduce the amount of RF current traveling from the backing plate through the diffuser support members to the frame structure.
  • FIG. 7 is a cross-sectional view of one embodiment of a gas feed-through assembly coupled to the gas inlet of the backing plate of FIG. 1 .
  • FIG. 8 is a schematic cross-sectional view of another embodiment of a chamber in which diffuser support members are coupled to a support frame.
  • Embodiments of the present invention generally provide apparatus and methods for supporting a diffuser in a processing apparatus adapted to process the substrate, such as in a deposition, etch, plasma treatment, plasma clean, or other substrate process.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of a gas distribution apparatus comprising a diffuser 110 supported in a chamber 100 , such as a plasma enhanced chemical vapor deposition (PECVD) chamber.
  • PECVD plasma enhanced chemical vapor deposition
  • One suitable PECVD chamber which may be used is available from Applied Materials, Inc., located in Santa Clara, Calif. or from subsidiaries of Applied Materials, Inc. It is understood that other chambers may benefit from the present apparatus and methods, such as an etch chamber, plasma treatment chamber, plasma clean chamber, and other chambers.
  • the chamber shown in FIG. 1 is adapted to process substrates in a horizontal orientation. It is understood that the present apparatus and methods may also apply to chambers adapted to process substrates in other orientations, such as a vertical orientation.
  • the chamber 100 comprises a chamber body having walls 102 and a bottom 104 .
  • the chamber 100 also includes a backing plate 112 coupled to the lid 123 of the chamber 100 .
  • a chamber interior volume 106 is bounded by the chamber body and the backing plate 112 .
  • a substrate support 130 is disposed within the chamber interior volume 106 .
  • the chamber interior volume 106 is accessed through a sealable slit valve 108 so that a substrate 140 may be transferred in and out of the chamber 100 .
  • the substrate support 130 includes a substrate receiving surface 132 for supporting the substrate 140 and includes a stem 134 coupled to a lift system 136 to raise and lower the substrate support 130 .
  • a shadow ring (not shown) may be optionally placed over the periphery of the substrate 140 .
  • Lift pins 138 are moveably disposed through the substrate support 130 to move the substrate 140 to and from the substrate receiving surface 132 .
  • the substrate support 130 may also include heating and/or cooling elements 139 to maintain the substrate support 130 at a desired temperature.
  • the substrate support 130 may also include grounding straps 131 to provide radio frequency (RF) grounding at the periphery of the substrate support 130 .
  • RF radio frequency
  • a gas source 120 is coupled to the backing plate 112 to provide one or more gases through a gas inlet 142 in the backing plate 112 .
  • the gas travels through the gas inlet 142 and through gas passages 111 in the diffuser 110 to a processing region 180 above the substrate 140 .
  • a vacuum pump 109 is coupled to the chamber 100 to control the chamber interior volume 106 and the processing region 180 at a desired pressure.
  • the diffuser 110 includes a first or upstream side 113 and a second or downstream side 116 . Each of the gas passages 111 are formed through the diffuser 110 to allow gas transfer from the upstream side 113 to the downstream side 116 to the processing region 180 .
  • a radio frequency (RF) power source 122 may be coupled to the backing plate 112 to provide RF power to the diffuser 110 .
  • the backing plate 112 which is shown supported by the lid 123 , may be electrically isolated from other portions of the chamber 100 by an insulator 185 .
  • the RF power applied to the diffuser creates an electric field between the diffuser 110 and the substrate support 130 so that a plasma may be generated from gases in the processing region 180 .
  • Various frequencies may be used, such as a frequency between about 0.3 MHz and about 200 MHz, such as a RF power provided at a frequency of 13.56 MHz.
  • a remote plasma source 124 such as an inductively coupled or microwave remote plasma source, may also be coupled between the gas source 120 and the gas inlet 142 formed in the backing plate 112 . Between processing substrates, a cleaning gas may be provided to the remote plasma source 124 so that a remote plasma is generated and provided within the chamber 100 to clean chamber components. The cleaning gas may be further excited by RF current supplied by the RF power source 122 to the diffuser 110 . Suitable cleaning gases include but are not limited to NF 3 , F 2 , and SF 6 .
  • the diffuser 110 is coupled to the backing plate 112 at an edge portion of the diffuser 110 by a suspension 114 .
  • the suspension 114 may be flexible to allow expansion and contraction of the diffuser 110 .
  • the suspension 114 also transmits RF current from the backing plate 112 applied by the RF power source 122 to the diffuser 110 . Examples of a flexible suspension are disclosed in U.S. Pat. No. 6,477,980, assigned to Applied Materials, Inc., incorporated by reference in its entirety to the extent not inconsistent with the present disclosure.
  • One or more diffuser support members 160 are moveably disposed through respective openings 165 in backing plate 112 and are coupled to the diffuser 110 .
  • the diffuser support members 160 are coupled to a frame structure 175 .
  • the material of the diffuser support members 160 may be any process compatible material of sufficient strength to support the diffuser 110 , such as metals, alloys, polymers, ceramics, aluminum, titanium, and combinations thereof.
  • the diffuser supports 160 are preferably coupled to a center area of the diffuser 110 . Since the diffuser support members 160 are moveably disposed through the backing plate 112 , the diffuser support members 160 may support the center area of diffuser 110 in any desired position independent of the position of the center area of the backing plate 112 .
  • the center area of the diffuser 110 is defined herein as a location within a radius R from the center of the diffuser, wherein R is 25% or less of the diagonal of the diffuser, preferably 15% or less of the diagonal of the diffuser, more preferably 10% or less of the diagonal of the diffuser. For instance, if the dimensions of a diffuser are 2.3 meters in length and 2.0 meters in width, the diagonal would be about 3.0 meters.
  • the diffuser support members 160 may be coupled to the frame structure 175 by a coupling assembly 150 .
  • the coupling assembly 150 may comprise a support ring 148 and one or more hangers 162 .
  • the hangers 162 are coupled to the frame structure 175 and to the support ring 148 .
  • the support ring 148 is coupled to the diffuser support members 160 .
  • the support ring 148 may comprise a dielectric material, such as ceramic or polymer materials, to electrically isolate the frame structure 175 or reduce the amount of RF current traveling from the backing plate through the diffuser support members 160 to the frame structure 175 .
  • the support ring 148 may comprise a conductive material, such as steel, aluminum, and other materials.
  • FIG. 2 is a top isometric view of the frame structure 175 of FIG. 1 .
  • the frame structure 175 is disposed above the backing plate 112 and is coupled to the lid 123 .
  • the support ring 148 is shown as an annular shape, other shapes may be used, which include polygonal shapes, oval shapes, and other simple or complex patterns and shapes.
  • FIG. 3 is an enlarged schematic cross-sectional view of diffuser support members 160 , the backing plate 112 , and the diffuser 110 of the chamber 100 of FIG. 1 in which the backing plate 112 is bowed or flexed.
  • a vacuum pressure is applied to the interior chamber volume 106 , the backing plate 112 experiences a bow, flex, droop or sag due to the large differential in pressure between the interior chamber volume 106 and atmospheric pressure.
  • vacuum pressure means a pressure of less than 760 Torr, preferably less than 100 Torr, more preferably less than 15 Torr.
  • a backing plate for a chamber to process substrates having a substrate surface area of 25,000 cm 2 or more may bow or flex a couple of millimeters due to the vacuum pressure applied to it.
  • a typical plasma process may require a controlled spacing between the diffuser 110 and the substrate receiving surface 132 of the substrate support 130 to be about 30 millimeters or less, or even 15 millimeters or less. Therefore, a variation of the spacing between the substrate receiving surface 132 and the diffuser may adversely affect plasma processing, such as plasma deposition processing film properties and uniformity.
  • the bow or flex of the backing plate 112 does not affect the position of the center area of the diffuser 110 since the center area of the diffuser 112 is supported by the diffuser support members 160 moveably disposed through the backing plate 112 .
  • the diffuser support members 160 are supported by frame structure 175 .
  • the frame structure 175 is disposed outside the chamber interior volume 106 .
  • the position of the center area of the diffuser 112 does not depend on the position of the center area of the backing plate 112 .
  • FIGS. 4A-4E show various embodiments of sealing devices 147 associated with the diffuser support members 160 to providing a vacuum seal of the openings 165 of the backing plate.
  • the sealing devices 147 isolate the chamber interior volume 106 from the ambient outside environment while allowing relative movement of the diffuser support member 160 and the backing plate 112 .
  • FIG. 4A shows a sealing device 147 A comprising an o-ring 325 A sandwiched between a cap 347 A and a top side 412 of the backing plate 112 .
  • the cap 347 A includes an opening 417 A formed therein to receive the diffuser support member 160 and may be coupled to the top side 412 of the backing plate 112 by fasteners 410 A, such as bolts, screws, and the like.
  • the o-ring 325 A seals the opening 165 by being in sliding contact with the diffuser support member 160 .
  • FIG. 4B shows a sealing device 147 B comprising an o-ring 325 B sandwiched between a cap 347 B and the bottom side 413 of the backing plate 112 .
  • the cap 347 B includes an opening 417 B formed therein to receive the diffuser support member 160 and may be coupled to the bottom side 413 of the backing plate 112 by fasteners 410 B, such as bolts, screws, and the like.
  • the o-ring 325 B seals the opening 165 in the backing plate 112 by being in sliding contact with the diffuser support member 160 .
  • FIG. 4C shows a sealing device 147 C comprising an o-ring 325 C disposed in a land 420 formed in the backing plate 112 .
  • the o-ring 325 C seals the opening 165 in the backing plate 112 by being in sliding contact with the diffuser support member 160 .
  • FIG. 4D shows a sealing device 147 D comprising an o-ring 325 D disposed in a land 421 formed in the diffuser support member 160 .
  • the o-ring 325 D seals the opening 165 in the backing plate by being in sliding contact with the opening 165 of the backing plate 112 .
  • FIG. 4E shows a sealing device 147 E comprising a flexible bellow 402 surround at least a portion of the diffuser support member 160 .
  • the flexible bellow 402 is coupled to the backing plate 112 and to the support ring 148 .
  • the flexible bellow 402 can expand or contract due to the variation in the distance between the backing plate 112 and the support ring 148 .
  • the flexible bellow 402 may be made of metals, such as steels or aluminum, or a polymer material.
  • An optional cover 405 may be disposed at least partially around the diffuser support member 160 to provide a vacuum seal between the support ring 148 and the diffuser support member 160 .
  • FIG. 5 is a cross-section view of one embodiment of a diffuser support member 160 coupled to the diffuser through a mating mechanism 425 coupled to the diffuser 110 .
  • the mating mechanism 425 has a cavity adapted to receive and mate with a head portion 525 of the diffuser support member 160 .
  • the mating mechanism provides ease of attaching and detaching the mating mechanism 425 from the diffuser support member 160 .
  • FIG. 6A is a cross-section view of one embodiment of an insulative sleeve 602 disposed at least partially around the diffuser support member 160 to electrically isolate the frame structure from the diffuser support member 160 or reduce the amount of RF current traveling from the backing plate through the diffuser support members to the frame structure.
  • the insulative sleeve 602 provides an insulative separation between the diffuser support member 160 and the support ring 148 of the coupling assembly 150 .
  • the diffuser support member may be coupled to support frame with the coupling assembly and the insulative sleeve may provide an insulative separation between the diffuser support member and the support frame.
  • FIG. 6B is a cross-sectional view of one embodiment of a dielectric break 560 coupled to the diffuser support member 160 .
  • the dielectric break electrically isolates the frame structure 175 from the diffuser support member 160 or reduces the amount of RF current traveling from the backing plate 112 through the diffuser support members 160 to the frame structure 175 .
  • the dielectric break 560 may receive an end of the diffuser support member 160 and an end of the hanger 162 without the support ring 148 and may be coupled together by a fastener 565 , such as a pin, a screw, or a bolt.
  • FIG. 7 is a cross-sectional view of one embodiment of a gas feed-through assembly 710 coupled to the gas inlet 142 of the backing plate 112 .
  • the gas feed-through assembly 710 includes an inlet block 715 in fluid communication with the gas inlet 142 .
  • the inlet block 715 includes a connector 745 that is coupled to the RF power source 122 .
  • the inlet block 715 comprises a conductive material, such as aluminum.
  • RF current provided by the RF power source 112 travels through the inlet block 715 , through the backing plate 112 , through the flexible suspension 114 , and to the diffuser 110 .
  • a conduit 740 provides fluid communication between the inlet block 715 and the remote plasma source interface 720 .
  • the remote plasma source interface 720 is coupled to the remote plasma source 124 which is coupled to the gas source 120 .
  • the conduit 740 preferably comprises a dielectric material to reduce the amount of RF current traveling from the inlet block 715 therethrough.
  • FIG. 8 is a schematic cross-sectional view of another embodiment of a chamber 900 in which the diffuser support members 160 are directly coupled to the support frame 175 .
  • the RF power source 122 may be coupled to the backing plate 112 or may be coupled to one or more of the diffuser support members 160 .
  • the chamber 900 may include a cover 118 adapted to isolate any electrically active portions of the chamber 900 .
  • the cover 118 may be extended to the lid 123 , which may be at ground potential.
  • an insulative sleeve may at least partially surround each diffuser support member 160 to electrically isolate the support frame 175 from the diffuser support members 160 .

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
US11/767,307 2007-06-22 2007-06-22 Diffuser support Abandoned US20080317973A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US11/767,307 US20080317973A1 (en) 2007-06-22 2007-06-22 Diffuser support
JP2008158915A JP5215055B2 (ja) 2007-06-22 2008-06-18 拡散装置支持体
KR1020080057715A KR101016860B1 (ko) 2007-06-22 2008-06-19 확산기 지지부
TW097123127A TWI389172B (zh) 2007-06-22 2008-06-20 擴散器支撐件
CN2011101921429A CN102251227B (zh) 2007-06-22 2008-06-20 散射器支撑
CN2008101269486A CN101333651B (zh) 2007-06-22 2008-06-20 散射器支撑
US12/749,172 US9580804B2 (en) 2007-06-22 2010-03-29 Diffuser support

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/767,307 US20080317973A1 (en) 2007-06-22 2007-06-22 Diffuser support

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/749,172 Continuation US9580804B2 (en) 2007-06-22 2010-03-29 Diffuser support

Publications (1)

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US20080317973A1 true US20080317973A1 (en) 2008-12-25

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US11/767,307 Abandoned US20080317973A1 (en) 2007-06-22 2007-06-22 Diffuser support
US12/749,172 Active 2029-03-02 US9580804B2 (en) 2007-06-22 2010-03-29 Diffuser support

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/749,172 Active 2029-03-02 US9580804B2 (en) 2007-06-22 2010-03-29 Diffuser support

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US (2) US20080317973A1 (https=)
JP (1) JP5215055B2 (https=)
KR (1) KR101016860B1 (https=)
CN (2) CN101333651B (https=)
TW (1) TWI389172B (https=)

Cited By (13)

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US20090101069A1 (en) * 2007-10-12 2009-04-23 Suhail Anwar Rf return plates for backing plate support
US20090165722A1 (en) * 2007-12-26 2009-07-02 Jusung Engineering Co., Ltd Apparatus for treating substrate
US20120222815A1 (en) * 2011-03-04 2012-09-06 Mohamed Sabri Hybrid ceramic showerhead
JP2013533388A (ja) * 2010-07-28 2013-08-22 アプライド マテリアルズ インコーポレイテッド 改善されたガス流のためのシャワーヘッド支持構造
KR101352923B1 (ko) * 2011-09-16 2014-01-22 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
US9267205B1 (en) * 2012-05-30 2016-02-23 Alta Devices, Inc. Fastener system for supporting a liner plate in a gas showerhead reactor
DE102015110440A1 (de) 2014-11-20 2016-05-25 Aixtron Se CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
DE102014116991A1 (de) 2014-11-20 2016-05-25 Aixtron Se CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
WO2016079232A1 (de) * 2014-11-20 2016-05-26 Aixtron Se Vorrichtung zum beschichten eines grossflächigen substrats
US20160362785A1 (en) * 2015-06-15 2016-12-15 Samsung Electronics Co., Ltd. Apparatus for manufacturing semiconductor device having a gas mixer
US10494717B2 (en) 2015-05-26 2019-12-03 Lam Research Corporation Anti-transient showerhead
CN114807895A (zh) * 2017-07-11 2022-07-29 三星显示有限公司 化学气相沉积设备
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead

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JP5285403B2 (ja) * 2008-04-15 2013-09-11 東京エレクトロン株式会社 真空容器およびプラズマ処理装置
DE102011056589A1 (de) * 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
KR101352925B1 (ko) * 2011-09-16 2014-01-22 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
TWI644073B (zh) * 2013-03-11 2018-12-11 Applied Materials, Inc. 高溫處理室蓋體
KR101580645B1 (ko) * 2013-11-18 2015-12-28 조규원 분리되는 렉산을 구비한 로드락 모듈 챔버의 안전커버
KR102248657B1 (ko) * 2014-06-02 2021-05-07 주성엔지니어링(주) 기판처리장치
CN104195528A (zh) * 2014-09-05 2014-12-10 厦门大学 一种耦合高频振动的微型等离子增强化学气相沉积装置
DE102015101461A1 (de) * 2015-02-02 2016-08-04 Aixtron Se Vorrichtung zum Beschichten eines großflächigen Substrats
US10840114B1 (en) * 2016-07-26 2020-11-17 Raytheon Company Rapid thermal anneal apparatus and method
KR101855654B1 (ko) * 2016-12-23 2018-05-08 주식회사 테스 대면적 샤워헤드 어셈블리
TWI663674B (zh) * 2017-07-25 2019-06-21 Hermes-Epitek Corporation 用於半導體製程之腔體蓋與頂板之組合體及成膜裝置
US10883174B2 (en) * 2018-11-27 2021-01-05 Applied Materials, Inc. Gas diffuser mounting plate for reduced particle generation
KR102707623B1 (ko) * 2020-09-11 2024-09-19 주식회사 원익아이피에스 기판처리장치
KR102526364B1 (ko) * 2021-04-14 2023-05-02 주식회사 에이치앤이루자 기판 처리 장치의 샤워 헤드 지지 및 조절부

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KR20080112961A (ko) 2008-12-26
TWI389172B (zh) 2013-03-11
KR101016860B1 (ko) 2011-02-22
CN102251227B (zh) 2013-11-27
US20100181024A1 (en) 2010-07-22
JP5215055B2 (ja) 2013-06-19
CN102251227A (zh) 2011-11-23
CN101333651A (zh) 2008-12-31
US9580804B2 (en) 2017-02-28
TW200908079A (en) 2009-02-16
JP2009065121A (ja) 2009-03-26

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