US20060284207A1 - Light emitting diode package with metal reflective layer and method of manufacturing the same - Google Patents

Light emitting diode package with metal reflective layer and method of manufacturing the same Download PDF

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Publication number
US20060284207A1
US20060284207A1 US11/455,648 US45564806A US2006284207A1 US 20060284207 A1 US20060284207 A1 US 20060284207A1 US 45564806 A US45564806 A US 45564806A US 2006284207 A1 US2006284207 A1 US 2006284207A1
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Prior art keywords
encapsulant
emitting diode
substrate
light emitting
reflective layer
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Abandoned
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US11/455,648
Inventor
Jung Park
Seon Lee
Kyung Han
Seong Han
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Priority to KR10-2005-0053163 priority Critical
Priority to KR1020050053163A priority patent/KR100638868B1/en
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD. reassignment SAMSUNG ELECTRO-MECHANICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAN, KYUNG TAEG, HAN, SEONG YEON, LEE, SEON GOO, PARK, JUNG KYU
Publication of US20060284207A1 publication Critical patent/US20060284207A1/en
Application status is Abandoned legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting

Abstract

The invention relates to an LED package having a metal reflective layer for focusing and emitting light through a side of the package, and a manufacturing method of the same. The LED package includes a substrate with an electrode formed thereon, a light emitting diode chip disposed on the substrate, and an encapsulant covering the LED chip and the substrate to protect the LED chip. The LED package also includes a metal reflective layer surrounding side surfaces of the encapsulant to form a light transmitting surface on a top surface of the encapsulant. The invention minimizes light loss, improves luminance, can be mass-produced as a PCB type, and adopts EMC transfer molding to minimize irregular color distribution, thereby improving optical quality.

Description

    CLAIM OF PRIORITY
  • This application claims the benefit of Korean Patent Application No. 2005-53163 filed on Jun. 20, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a Light Emitting Diode (LED) package having a metal reflective layer for focusing and emitting light through one side of the package, and a method of manufacturing the same. More particularly, the invention relates to an LED package with a metal reflective layer minimized in light loss and improved in luminance, which can be mass-manufactured as a PCB type in a small size unaffected by the size of an LED chip, and is improved in productivity.
  • 2. Description of the Related Art
  • In general, a mobile phone or PDA adopts a light emitting diode (LED) package in various sizes for a backlight.
  • As the backlights are becoming slimmer, the LED packages adopted therein are also becoming slimmer these days.
  • The LED package 300 shown in FIG. 1 is described in U.S. Patent No. 2003-0094622, in which a reflective layer 312 is formed of a lead frame for an LED chip 310 mounted in the package 300, and the package is sealed with a sealing plate 314 that covers the LED chip 310 and the reflective layer 312.
  • In this conventional LED package 300, the reflective layer 312 is made of an Ag-plated layer to focus and emit light from the LED chip 310 through one side of the package.
  • However, in such a conventional structure, the LED chip 310 is formed in a recess 322 of the substrate, and a separate sealing plate 314 covers the recess 322, and thus limiting automated manufacturing and mass-production.
  • FIGS. 2(a) and 2(b) illustrate a different structure of LED package 400 of the prior art. An LED chip 412 is mounted on a substrate 410, and a molded part 414 with a cavity therein is adhered on the substrate 410. Then, a resin solution with phosphor and epoxy mixed therein is injected into the space 414 a to be cured, and the complete structure is diced. However, as an additional process is required to adhere the molded part 414 on the substrate 410, the manufacturing process is not efficient in terms of productivity.
  • In addition, as shown in FIG. 3, in the conventional LED package 400, the resin solution with the phosphor and epoxy mixed therein is injected into the space 414 a in the molded part 414 and cured for about 1 hour to form an encapsulant 416. In such a curing process, the phosphor in the epoxy 418 a of the encapsulant 416 tends to precipitate, causing irregular color distribution. Therefore, such a conventional LED package 400 yields low-uniformity and rather mediocre color development.
  • SUMMARY OF THE INVENTION
  • The present invention has been made to solve the foregoing problems of the prior art and therefore an object of certain embodiments of the present invention is to provide an LED package having a metal reflective layer, which does not require a molded part, and thus can have a minimal thickness, and a method of manufacturing the same.
  • Another object of certain embodiments of the invention is to provide an LED package having a metal reflective layer, which can be mass-produced without being affected by the LED chip size, and can be easily manufactured in a small size, and a method of manufacturing the same.
  • Further another object of certain embodiments of the invention is to provide an LED package having a metal reflective layer, which adopts Epoxy Molding Compound (EMC) transfer molding to minimize irregular color distribution and enhance uniform color development, and a method of manufacturing the same.
  • Yet another object of certain embodiments of the invention is to provide an LED package minimized in light loss and improved in luminance, which can be mass-produced and is improved in productivity, and a method of manufacturing the same.
  • According to an aspect of the invention for realizing the object, there is provided a light emitting diode package for emitting light from a light emitting diode chip in one direction, including: a substrate with an electrode formed thereon; a light emitting diode chip disposed on the substrate; an encapsulant covering the LED chip and the substrate to protect the LED chip; and a metal reflective layer surrounding side surfaces of the encapsulant to form a light transmitting surface on a top surface of the encapsulant.
  • According to another aspect of the invention for realizing the object, there is provided a method of manufacturing a light emitting diode package for emitting light from a light emitting diode chip in one direction, including steps of: providing a substrate with an electrode formed thereon; disposing a light emitting diode chip on the substrate; forming an encapsulant on the light emitting diode chip and the substrate; cutting the encapsulant; and forming a reflective layer on the encapsulant.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 is a sectional view illustrating an LED package according to the prior art;
  • FIG. 2 illustrates another LED package according to the prior art, in which (a) is an explanatory view illustrating cutting a molded part, and (b) is a longitudinal sectional view;
  • FIG. 3 illustrates a work process with epoxy resin constituting an encapsulant of the LED package according to the prior art;
  • FIG. 4 is a configuration view illustrating an LED package having a metal reflective layer according to the present invention, in which (a) is a perspective view of the exterior, and (b) is a sectional view illustrating the LED package having a light transmitting surface on an upper part thereof;
  • FIG. 5 is a view illustrating the step-by-step process of manufacturing the LED package having a metal reflective layer according to the present invention;
  • FIG. 6 is a view illustrating the step-by-step process of manufacturing a variation of the LED package having a metal reflective layer; and
  • FIG. 7 is a view illustrating EMC transfer molding to form an encapsulant in the manufacturing process of the LED package according to the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
  • As shown in FIG. 4, an LED package 1 having a metal reflective layer according to the present invention is for emitting light from an LED chip 5 in one direction of an encapsulant 10.
  • Light is emitted through a light transmitting surface 17 which is preferably in front and in parallel with a plane where the LED chip 5 is disposed.
  • The LED package 1 having a metal reflective layer according to the present invention has a substrate with electrodes 15 a and 15 b formed thereon. The substrate 15 may preferably be a Printed Circuit Board (PCB) or a ceramic substrate having pattern electrodes 15 a and vertical electrodes 15 b such as vias.
  • In addition, an LED chip 5 is electrically connected to the electrode 15 a and mounted on the substrate 15. The LED chip 5 may be a horizontal type with all of its electric terminals formed only on an upper surface thereof, or a vertical type with the electric terminal formed on upper and lower surfaces thereof.
  • In addition, an encapsulant 10 is formed on the LED chip 5 and the substrate 15 to cover them. The encapsulant 10 is made by curing epoxy resin, and preferably is formed via Epoxy Molding Compound (EMC) transfer molding using epoxy molding compound with phosphor mixed therein in order to minimize irregular color distribution.
  • According to the present invention, when the encapsulant 10 is disposed on the LED chip 5 and the substrate 15 in a desired form, a reflective layer 20 is formed on the encapsulant 10 with a light transmitting surface 17 on one surface, i.e., an upper surface of the encapsulant 10 as shown in FIG. 4 (b).
  • The reflective layer 20 is made of metal selected from a group consisting of Al, Au, Ag, Ni, W, Ti and Pt. The reflective layer 20 is formed on side surfaces of the encapsulant 10 via electroless plating or electro-plating, or surrounding the entire surfaces of the encapsulant 10 via vacuum deposition, with an upper surface of the encapsulant polished to form the light transmitting surface 17.
  • Therefore, the reflective layer 20 surrounds the entire side surfaces, except the portion of the light transmitting surface 17, of the encapsulant 10 without any spots missed.
  • A manufacturing process 100 of an LED package having a metal reflective layer according to the present invention will now be explained hereinafter.
  • As shown in FIG. 5, the manufacturing process 100 of the LED package having a metal reflective layer according to the present invention starts with a step 102 of providing a substrate 15 with electrodes 15 a and 15 b formed thereon.
  • In addition, the substrate 10 is provided with pattern electrodes 15 a and vertical electrodes 15 b such as vias for supplying power to the LED chips and electrodes 15 c for plating a reflective layer later.
  • The substrate 15 can be a PCB or a ceramic substrate with vertical electrodes 15 b such as vias formed thereon, and each of the pattern electrodes 15 a connected to the LED chip 5 is electrically connected to each of the vertical electrode 15 b such as a via.
  • In the next step 104, the LED chip 5 is mounted on the substrate 15.
  • In this step 104, a plurality of LED chips 5 are simultaneously mounted on predetermined locations on one substrate 15, and each of the LED chips 5 is electrically connected to each of the pattern electrodes 15 a on the substrate 15 via wires.
  • In the next step 106, an encapsulant 10 is formed on the LED chip 5 and the substrate 15.
  • In this step 106, the encapsulant 10 is formed via EMC transfer molding using an epoxy molding compound with phosphor mixed therein in order to minimize irregular color distribution after it is cured.
  • As shown in FIG. 7, in the process of EMC transfer molding 200 adopted for forming the encapsulant 10, the substrates 15 and the LED chips 5 are inserted into a mold 210 maintained at about 150° C. to 190° C., and a solid mixture 220 of transparent EMC and phosphor maintained at about 80° C. to 90° C. is injected into the mold 210. Then, the mixture 220 of the transparent EMC and the phosphor is compressed at 500 to 1000 psi so that the mixture of the transparent EMC and the phosphor changes in its phase from solid to liquid inside the mold 210. This liquid mixture 220 of the transparent EMC and the phosphor flows over the substrate 15 and the LED chip 5 to form the encapsulant 10. After 5 to 7 minutes without applying heat and compression, it is cured in a short time from liquid phase to solid phase.
  • After the curing is completed, the substrate 15 and the LED chip 5 with the encapsulant 10 formed thereon is separated from the mold 210 to complete the encapsulant 10.
  • In the encapsulant 10 formed via the above described EMC transfer molding, the phosphor 222 b does not precipitate in the transparent EMC 222 a, which minimizes irregular color distribution and enhances uniformity of color development.
  • After the encapsulant 10 is completed, the encapsulant 10 is cut in the next step 108.
  • In this step 108, in order to form a desired shape of encapsulant 10 for the LED chips 5, only the encapsulant 10 is diced or etched. In this step 108, the encapsulant 10 is formed such that the lower periphery thereof exposes the electrode 15 c for plating.
  • Then, a reflective layer 20 is formed on the encapsulant 10 in the next step 110. The reflective layer 20 is formed as a plated layer 22 on the encapsulant 10 by electroless plating or electro-plating highly reflective metal selected from a group consisting of, for example, Al, Au, Ag, Ni, W, Ti and Pt. At this point, the plated layer 22 is formed integrally with the encapsulant 10 to completely surround the side surfaces of the encapsulant 10, thereby preventing leakage of light.
  • With the reflective layer 20 formed as just described, the light transmitting surface 17 is formed on an upper surface of the encapsulant 10.
  • In the next step 112, the plated layer 22 and the substrate 15 are cut horizontally and vertically into individual LED packages to obtain a plurality of LED packages 1.
  • In this step 112, each of the LED packages 1 has the light transmitting surface 17 formed on an upper surface of the encapsulant 10, and the metal reflective layer 20 surrounds the side surfaces of the encapsulant 10 so that light from the LED chip is leaked only through the light transmitting surface 17.
  • Alternatively, as shown in FIG. 6, in the step 110 of forming the reflective layer 20 on the encapsulant 10, a sputtered layer 22′ is formed via vacuum sputtering using highly reflective metal selected from a group consisting of, for example, Al, Au, Ag, Ni, W, Ti and Pt to surround the outer surfaces of the encapsulant 10. In this case, the sputtered layer 22′ is formed integrally with the encapsulant 10 to completely surround the outer surfaces of the encapsulant 10 so as not to allow any leakage of light.
  • In the next step 110′, an upper surface of the sputtered layer 22′ is polished to be removed, thus forming the light transmitting surface 17 on an upper surface of the encapsulant 10.
  • Thus is completed a structure with the light transmitting surfaces 17 formed on upper surfaces of the encapsulant 10.
  • In the next step 112, the substrate 15 is cut horizontally and vertically into individual LED packages to obtain a plurality of LED packages 1.
  • Through the above steps, each LED package 1 is completed with the light transmitting surface 17 formed on an upper surface of the encapsulant 10 and the metal reflective layer 20 surrounding the side surfaces of the encapsulant, thereby allowing leakage of light from the LED chip 5 only through the light transmitting surface 17.
  • According to the present invention as set forth above, a reflective layer and an encapsulant are integrated to minimize the thickness of the LED package, thereby easily applicable to various types of slimmer backlights.
  • In addition, the present invention does not need a molded part in addition to an encapsulant, allowing a thin, small-sized structure, and adopts highly reflective metal for a reflective layer surrounding the surfaces of the encapsulant, except the portion of the light transmitting surface, to minimize leakage of light.
  • In addition, in the present invention, the entire process including mounting the LED chip, molding and dicing is conducted on a PCB, enabling mass-production with significantly improved productivity.
  • Furthermore, the present invention adopts EMC transfer molding using an epoxy molding compound with phosphor mixed therein so that the phosphor does not precipitate after the encapsulant is cured, thereby minimizing irregular color distribution and significantly improving optical quality.
  • Certain exemplary embodiments of the invention have been explained and shown in the drawings as presently preferred. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. While the present invention has been shown and described in connection with the preferred embodiments, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (14)

1. A light emitting diode package for emitting light from a light emitting diode chip in one direction, comprising:
a substrate with an electrode formed thereon;
a light emitting diode chip disposed on the substrate;
an encapsulant covering the LED chip and the substrate to protect the LED chip; and
a metal reflective layer surrounding side surfaces of the encapsulant to form a light transmitting surface on a top surface of the encapsulant.
2. The light emitting diode package according to claim 1, wherein the metal reflective layer is formed by depositing or plating metal selected from a group consisting of Al, Au, Ag, Ni, W, Ti and Pt.
3. The light emitting diode package according to claim 1, wherein the substrate comprises a printed circuit board or a ceramic substrate with an electrode formed thereon.
4. The light emitting diode package according to claim 1, wherein the light transmitting surface is disposed in front and in parallel with a plane where the light emitting diode chip is disposed.
5. The light emitting diode package according to claim 1, wherein the encapsulant is made of epoxy molding compound with phosphor mixed and uniformly dispersed therein.
6. A method of manufacturing a light emitting diode package for emitting light from a light emitting diode chip in one direction, comprising steps of:
providing a substrate with an electrode formed thereon;
disposing a light emitting diode chip on the substrate;
forming an encapsulant on the light emitting diode chip and the substrate;
cutting the encapsulant; and
forming a reflective layer on the encapsulant.
7. The method according to claim 6, wherein the step of forming an encapsulant comprises Epoxy Molding Compound (EMC) transfer molding of transparent epoxy molding compound with phosphor mixed therein.
8. The method according to claim 6, wherein the step of cutting the encapsulant comprises dicing or etching only the encapsulant to obtain a desired form of encapsulant for the light emitting diode chip, and exposing a pattern electrode plated on the substrate.
9. The method according to claim 6, wherein the step of forming a reflective layer comprises depositing or plating metal selected from a group consisting of Al, Au, Ag, Ni, W, Ti and Pt.
10. The method according to claim 6, wherein the step of forming a reflective layer comprises forming a sputtered layer made of highly reflective metal around an outer surface of the encapsulant via vacuum sputtering, and removing a portion of the sputtered layer via polishing, thereby forming a light transmitting surface.
11. The method according to claim 6, wherein the step of forming a reflective layer includes cutting the plated reflective layer and the substrate or the sputtered reflective layer and the substrate into individual light emitting diode packages.
12. The method according to claim 7, wherein the EMC transfer molding for forming an encapsulant comprises inserting the substrate and the light emitting diode chip in a mold maintained at a temperature ranging from 150° C. to 190° C., inserting a solid mixture of transparent epoxy molding compound and phosphor maintained at a temperature ranging from 80° C. to 90° C. into the mold, thereby changing a phase of the mixture of transparent EMC and phosphor from solid to liquid to form an encapsulant.
13. The method according to claim 12, further comprising a step of compressing the solid mixture of transparent epoxy molding compound and phosphor into the mold at 500 psi to 1000 psi.
14. The method according to claim 13, wherein the mixture is cured into the encapsulant without precipitation of the phosphor in the transparent epoxy molding compound in order to minimize irregular color distribution.
US11/455,648 2005-06-20 2006-06-20 Light emitting diode package with metal reflective layer and method of manufacturing the same Abandoned US20060284207A1 (en)

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KR1020050053163A KR100638868B1 (en) 2005-06-20 2005-06-20 Led package with metal reflection layer and method of manufacturing the same

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Cited By (31)

* Cited by examiner, † Cited by third party
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