CN108346720A - A kind of preparation method for light emitting device package - Google Patents
A kind of preparation method for light emitting device package Download PDFInfo
- Publication number
- CN108346720A CN108346720A CN201810065044.0A CN201810065044A CN108346720A CN 108346720 A CN108346720 A CN 108346720A CN 201810065044 A CN201810065044 A CN 201810065044A CN 108346720 A CN108346720 A CN 108346720A
- Authority
- CN
- China
- Prior art keywords
- preparation
- light emitting
- layer
- emitting device
- device package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of preparation methods for light emitting device package, in embodiments, provide a kind of preparation method of luminescent device, include the wavelength conversion layer of one layer of conversion particles wavelength of coating in wafer scale LED flip chip, after cutting, then sprays one layer of reflecting layer in cut place, it is cut again, final separation forms complete luminescent device, and this preparation process greatly simplifies light emitting device package manufacturing process, improves the production efficiency of encapsulation manufacture.
Description
Technical field
The invention belongs to LED photovoltaic processing technique fields, more particularly, to a kind of preparation method of light emitting device package
Background technology
Light emitting diode (LED) is the compound semiconductor device for converting electrical energy into luminous energy, is partly led by controlling adjustment
The composition ratio of compound in body, may be implemented the light for sending out a variety of colors.LED has long lifespan, light-weight, miniaturization, electricity
The advantages that forcing down.The extraneous factors such as vibration, preheating time, temperature influence it smaller.LED be widely used to electronic watch,
On mobile phone, headlight for vehicles, electronic calculator and the POS, LED light source substitutes incandescent lamp and fluorescent lamp, this replacement trend from
Topical application field starts to develop.
CSP technologies were put forward at the age that microelectronic product at the end of the 20th century is constantly updated, due to high-power chip
Function is more, and performance is more preferable, and structure is more complicated, and the appearance of CSP is to substitute pervious small-power to use high-power chip
Chip, encapsulation volume account for total volume smaller.Exactly because the advantages that packaging body of CSP products is small, thin, light, therefore it is just
It takes in formula mobile electronic device and obtains application rapidly.Currently, up to 100 kinds or more of all kinds of CSP product varietys in the market, and
There is growing number of trend.
Existing light emitting device package step is more, and technological process is longer, and product quality is difficult to preferably control, in addition to applying
Outside cloth wavelength conversion layer and reflecting layer, just cutting action is just each with repeating three times, in addition also resetting and detecting process
Repeat twice, the process time is longer.Technological process is longer, technique influenced by extraneous factor it is bigger, therefore, it is existing shine
Device packaging technology production efficiency is relatively low, and product qualification rate is relatively low.As photophore is sent out towards micromation and integrated direction
Exhibition, causes existing light emitting device package preparation method to cannot be satisfied the requirement of development.
Invention content
For existing light emitting device package technological process there are the problem of, technical scheme is as follows：
The wavelength conversion layer of one layer of conversion particles wavelength of coating in wafer scale LED flip chip, after cutting, so
One layer of reflecting layer is sprayed in cut place afterwards, is cut again, final separation forms complete luminescent device.
Further, the wavelength conversion layer is that have fluorescent powder or quantum dot powder of converted wavelengths function etc.
Material.
Further, the method for preparing wavelength conversion layer be by fluorescent powder or quantum dot powder using cladding and
The methods of compression is attached on the wafer scale LED encapsulation chips of luminescent device.
Further, the cutting twice method is variant, is cut into laser cutting for the first time, is cut into knife for the second time
Piece is cut.
Further, the reflecting layer refers to being filled in luminescent device cut place to have the various wavelength light functions of reflection
Reflecting material.
Further, the flip-chip of the luminescent device includes the first and second downside electronic pads.
Further, all operating process under the clean room requirements that dust particle content reaches hundred grades into
Row.
The present invention innovation be：The present invention is directly coated with one by dotting glue method on wafer scale LED flip chip surface
Layer wavelength conversion layer sprays reflecting layer in cut place, and the present invention is used only the cutting of different modes twice, reduces cutting, weight
The number of row and detection, shorten the technological process of production than existing packaging technology, reduce the time of production, improve production
Efficiency and product yield.The present invention is that a kind of production effect is preferable, and yield is higher, the stronger luminescent device envelope of operability
The preparation method of dress.
Description of the drawings
Fig. 1：Former flow and embodiment process CIMS figure
Fig. 2：Wafer scale LED flip chip schematic diagram
Fig. 3-1：Wavelength conversion layer schematic diagram
Fig. 3-2：The wavelength conversion layer schematic diagram of additional film material
Fig. 4-1,4-2：The sectional view and vertical view of wafer scale LED chip before cutting
Fig. 5-1,5-2：The sectional view and vertical view of reflecting layer coating
Fig. 6-1,6-2：Sectional view in cutting process and vertical view
Fig. 7：Reflecting layer schematic diagram after cutting
Fig. 8：Final luminescent device schematic diagram
1：Wafer scale LED flip chip
2：First electrode pad
3：Second electrode pad
4：Fixed pedestal
5：Wavelength conversion layer after coating
6：Drip rubber head
7：Cutting blade
8：Reflecting layer
9：One single chip
10：Single package luminescent device
Specific embodiment
The embodiment of the present invention is illustrated below in conjunction with the accompanying drawings:
Basic preparation process：The wavelength conversion layer of one layer of conversion particles wavelength of coating in wafer scale LED flip chip,
After cutting, one layer of reflecting layer then is sprayed in cut place, is cut again, final separation forms complete photophore
Part.
Fig. 1 is the existing process CIMS figures with embodiment preparation method of CSP, and the present embodiment technological process is shorter, only
Including five steps, are respectively coated with wavelength conversion layer, cutting, rearrangement, coating reflection layer, detection classification.
As shown in Fig. 2, the first and second electronic pads (2,3) are arranged in wafer scale LED flip chip (1,9) lower surface and pacify
On fixed pedestal (4), the materials such as acrylic, silica gel, UV materials, epoxy resin can be used as pedestal, in Fig. 3-1 and Fig. 3-
In 2, the wavelength conversion layer (5,5- that a layer thickness is 50um-200um is equably coated at the top of chip using drop rubber head (6)
1), main component is phosphor material, includes mainly YAG groups, labelling groups, silicate group, sulfide group or nitridation
Object group.
As shown in Fig. 4-1 and Fig. 4-2, accurate cutting, kerf width are carried out by using the laser that power is 1.5-2.0KW
For 0.2-0.6mm, after cutting, to LED flip chip into rearrangement.As shown in Fig. 5-1 and Fig. 5-2, at chip cutting
Coating thickness is the reflecting layer (8) of 100um-300um.The material in reflecting layer (8) can be containing one or more light
Permeable epoxy resin can also be silicones, polyimide resin, Lauxite, acrylic resin.
As shown in Fig. 6-1, Fig. 6-2 and Fig. 7, secondary cut, depth of cut are carried out to the reflecting layer after spraying using blade
It is determined according to the thickness in reflecting layer, each chip is made thoroughly to separate.The CCT (correlated colour temperature) of last test chip and electrical spy
The electro-optic properties such as property are detected and classify to the chip after cutting.Since wafer-level package belongs to surface mount device
(SMD), and there is pn-junction, test can also be standardized.Fig. 8 is the finished product of single package luminescent device after classification.
The above is that a kind of specific implementation mode of the present invention is not departing from this hair for production technician
Under the premise of bright principle, can carry out it is perfect, but these improve be considered as within protection scope of the present invention.
Claims (7)
1. the preparation method of wafer scale LED encapsulation chip light emitting devices：It include one layer of the coating in wafer scale LED flip chip
Then the wavelength conversion layer of conversion particles wavelength sprays one layer of reflecting layer in cut place, is cut again after cutting,
Final separation forms complete luminescent device.
2. the preparation method according to claim 1 for light emitting device package, it is characterised in that：The wavelength convert
Layer is that have the materials such as fluorescent powder or the quantum dot powder of converted wavelengths function.
3. the preparation method according to claim 1 for light emitting device package, it is characterised in that：Described prepares wavelength
The method of conversion layer is that fluorescent powder or quantum dot powder are attached to the wafer of luminescent device using the methods of cladding and compression
On grade LED encapsulation chips.
4. the preparation method according to claim 1 for light emitting device package, it is characterised in that：The cutting twice
Method is variant, is cut into laser cutting for the first time, is cut into blade cutting for the second time.
5. the preparation method according to claim 1 for light emitting device package, it is characterised in that：The reflecting layer is
Finger is filled in luminescent device cut place and has the reflecting material for reflecting various wavelength light functions.
6. the preparation method according to claim 1 for light emitting device package, it is characterised in that：The luminescent device
Flip-chip include the first and second downside electronic pads.
7. the preparation method according to claim 1 for light emitting device package, it is characterised in that：All operations
Process carries out under the clean room requirements that dust particle content reaches hundred grades.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810065044.0A CN108346720A (en) | 2018-01-23 | 2018-01-23 | A kind of preparation method for light emitting device package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810065044.0A CN108346720A (en) | 2018-01-23 | 2018-01-23 | A kind of preparation method for light emitting device package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108346720A true CN108346720A (en) | 2018-07-31 |
Family
ID=62961259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810065044.0A Pending CN108346720A (en) | 2018-01-23 | 2018-01-23 | A kind of preparation method for light emitting device package |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108346720A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830496A (en) * | 2018-11-16 | 2019-05-31 | 吴裕朝 | Light emitting module encapsulation procedure |
| CN109920885A (en) * | 2019-01-25 | 2019-06-21 | 汕头大学 | A kind of the flood tide transfer and versicolor method of MicroLED |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885580A (en) * | 2005-06-20 | 2006-12-27 | 三星电机株式会社 | Led package with metal reflection layer and method of manufacturing the same |
| US20080233678A1 (en) * | 2007-03-20 | 2008-09-25 | Nichia Corporation | Method for manufacturing a semiconductor device |
| CN104064655A (en) * | 2013-03-22 | 2014-09-24 | 光宝电子(广州)有限公司 | LED package and manufacturing method thereof |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
| CN105932127A (en) * | 2016-05-04 | 2016-09-07 | 天津三安光电有限公司 | Light emitting diode and preparation method thereof |
-
2018
- 2018-01-23 CN CN201810065044.0A patent/CN108346720A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885580A (en) * | 2005-06-20 | 2006-12-27 | 三星电机株式会社 | Led package with metal reflection layer and method of manufacturing the same |
| US20080233678A1 (en) * | 2007-03-20 | 2008-09-25 | Nichia Corporation | Method for manufacturing a semiconductor device |
| CN104064655A (en) * | 2013-03-22 | 2014-09-24 | 光宝电子(广州)有限公司 | LED package and manufacturing method thereof |
| CN104835894A (en) * | 2014-02-12 | 2015-08-12 | 智威科技股份有限公司 | Semiconductor diode chip and manufacturing method thereof |
| CN105932127A (en) * | 2016-05-04 | 2016-09-07 | 天津三安光电有限公司 | Light emitting diode and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830496A (en) * | 2018-11-16 | 2019-05-31 | 吴裕朝 | Light emitting module encapsulation procedure |
| WO2020098502A1 (en) * | 2018-11-16 | 2020-05-22 | 吴裕朝 | Packaging process for light-emitting module |
| CN109920885A (en) * | 2019-01-25 | 2019-06-21 | 汕头大学 | A kind of the flood tide transfer and versicolor method of MicroLED |
| CN109920885B (en) * | 2019-01-25 | 2020-09-04 | 汕头大学 | Mass transfer and color conversion method for MicroLED |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101740707B (en) | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode | |
| EP2704219B1 (en) | Method for producing light-emitting device, and light-emitting device | |
| JP2003318448A (en) | Light emitting device and its forming method | |
| US20090256166A1 (en) | Semiconductor light-emitting device | |
| KR20140022019A (en) | Light emitting device and method for manufacturing same | |
| US7893453B2 (en) | LED device and method for manufacturing the same | |
| JP2011181510A (en) | Manufacturing method of light-emitting device using light-emitting diode | |
| JP2008532795A (en) | Optical element, method for manufacturing element that emits radiation, optical element, and element that emits radiation | |
| CN101123286A (en) | LED encapsulation structure and method | |
| TWI446590B (en) | Light emitting diode package structure and manufacturing method thereof | |
| CN106384775A (en) | LED upside-down mounting structure | |
| CN106410022A (en) | Manufacturing method of LED packaging device and the LED packaging device | |
| CN109285938B (en) | High-thermal-stability chip-level LED packaging method and product thereof | |
| TWI580079B (en) | Light emitting diode package structure and light emitting diode module | |
| CN108346720A (en) | A kind of preparation method for light emitting device package | |
| US20120021542A1 (en) | Method of packaging light emitting device | |
| TW201507209A (en) | Light emitting diode package structure and manufacturing method thereof | |
| CN101338879A (en) | Method for preparing white light LED utilizing YAG transparent ceramic | |
| US20150200336A1 (en) | Wafer level contact pad standoffs with integrated reflector | |
| KR100462394B1 (en) | White Light Emitting Diode and its method of making | |
| CN107565000B (en) | A kind of LED encapsulation structure and its packaging method with the double-deck phosphor powder layer | |
| CN110416384A (en) | A kind of packaging method promoting LED lamp bead light efficiency | |
| CN204348757U (en) | Fluorescence switch plant growth lamp unit, plant growth lamp components and plant growth lamp | |
| CN109390449A (en) | Light emitting device package | |
| CN204348751U (en) | The plant growth lamp unit of surface mounting component form, device and plant growth lamp thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 321000 No. 2688 West South Second Ring Road, Jinhua City, Zhejiang Province Applicant after: Zhejiang bloomer semiconductor Polytron Technologies Inc Address before: 321000 No. 2688 South Second Ring West Road, Jinhua City, Zhejiang Province Applicant before: ZHEJIANG DONGJING BOLANTE OPTOELECTRONICS CO., LTD. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180731 |
|
| RJ01 | Rejection of invention patent application after publication |