CN109830496A - Light emitting module encapsulation procedure - Google Patents
Light emitting module encapsulation procedure Download PDFInfo
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- CN109830496A CN109830496A CN201811368765.5A CN201811368765A CN109830496A CN 109830496 A CN109830496 A CN 109830496A CN 201811368765 A CN201811368765 A CN 201811368765A CN 109830496 A CN109830496 A CN 109830496A
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- Prior art keywords
- light emitting
- glue
- hyaline membrane
- wafer
- shading layer
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000005538 encapsulation Methods 0.000 title claims abstract description 31
- 239000003292 glue Substances 0.000 claims abstract description 56
- 238000000576 coating method Methods 0.000 claims abstract description 53
- 239000011248 coating agent Substances 0.000 claims abstract description 52
- 210000004276 hyalin Anatomy 0.000 claims abstract description 48
- 239000012528 membrane Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 11
- 238000000197 pyrolysis Methods 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 239000003522 acrylic cement Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000003086 colorant Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 58
- -1 polyethylene terephthalate Polymers 0.000 description 17
- 239000011241 protective layer Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 229920000915 polyvinyl chloride Polymers 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000003892 spreading Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229920002799 BoPET Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002223 garnet Substances 0.000 description 6
- 239000008240 homogeneous mixture Substances 0.000 description 6
- 239000004800 polyvinyl chloride Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000004677 Nylon Substances 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001778 nylon Polymers 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 150000002170 ethers Chemical group 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of encapsulation procedure of multi color temperature light emitting module, and the encapsulation procedure of the light emitting module includes: to provide the substrate of a upper surface tool position reference point；Stick a hyaline membrane in the upper surface of substrate；The light emitting device for sticking a plurality of different-colours attaches to the upper surface of the hyaline membrane, wherein, the light emitting device can be placed by a bonder according to position reference point, or a wafer is placed according to position reference point, the fluorescence coating of a plurality of different-colours is formed in the crystal column surface, and cuts the light emitting device that the wafer forms a plurality of different-colours；Gap between wantonly two light emitting devices forms a shading layer；Cut the shading layer.The present invention is stained with the fixed light emitting device of glue or wafer with stickiness, and then reduces mismachining tolerance, improves encapsulation procedure yield.
Description
Technical field
The present invention relates to a kind of packaging methods of light emitting module.
Background technique
Due to light emitting diode (Light Emitting Diode, abbreviation LED) have high brightness, it is small in size, light-weight, be not easy
Damaged, the advantages that low power consumption and service life are long, so being widely used in various luminous product and display product.Its original that shines
Reason is mainly by applying a voltage on diode, driving the electrons and holes in diode to combine, in conjunction with generated energy
Amount releases in the form of light.In addition, known light emitting device is mainly changed by the surface to light-emitting diode chip for backlight unit
Property, to adjust emission wavelength (color) and intensity.
In the encapsulation procedure of light emitting diode, the structures such as fluorescence coating, shading layer, protective layer can be formed in the surrounding of chip, with
Reach and changes colour temperature, control light emitting angle, adjustment encapsulating structure, protection chip to extend a variety of purposes such as service life.
Currently, how to produce the light emitting diode of small size to improve the radiating efficiency of light emitting diode, increase application range
Chip is an important issue.From positive cartridge chip, flip-chip, secondary millimeter chip (mini LED) to microns x chip (micro
LED), chip size is contracted to some tens of pm by hundreds of microns or even microns x chip only has 15 microns.Size reduction is related to be made to seal
It fills process difficulty to improve, especially makes positional shift because of chip placement position deviation or because of processing, will lead to and fail to precisely form
Encapsulating structure layer, cutting are inaccurate, reduce the yield of encapsulation procedure.
Summary of the invention
In view of the foregoing, it is necessary to one kind be provided, the fixed light emitting device of glue or light emitting diode are stained with stickiness in encapsulation process
Wafer, and then the light emitting module encapsulation procedure for reducing mismachining tolerance, improving encapsulation procedure yield.
A kind of encapsulation procedure of light emitting module, feature the following steps are included:
A substrate is provided, the upper surface of the substrate has a plurality of position reference points；
Stick a hyaline membrane in the substrate, wherein the hyaline membrane has a upper surface and a lower surface, the following table face contact base
The upper surface of plate；
Stick a plurality of light emitting devices in the upper surface of the hyaline membrane, wherein the position of a plurality of light emitting devices is to be based on being somebody's turn to do
A plurality of position reference points are determined that each light emitting device has electrode surface and shining relative to electrode surface for a tool electrode
Face, the upper surface of the luminous face contact hyaline membrane of the light emitting device；
Form gap of the shading layer between wantonly two light emitting devices；
Cut the shading layer in the gap between wantonly two light emitting devices.
In one embodiment, the position reference point is point, line or the envelope that can be recognized by a bonder, chip mounter or arranging machine
Close shape.
In one embodiment, the upper surface and the lower surface of the hyaline membrane, which has, is stained with glue, and the material for being stained with glue includes silica gel, pressure
Gram force glue, UV glue, the mixture for being pyrolyzed glue or above-mentioned any combination.
In one embodiment, a plurality of light emitting devices include that at least one first colour temperature light emitting device and one second colour temperature shine
Device.
In one embodiment, the shading layer include one first shading layer, form first shading layer the following steps are included:
Stick the hyaline membrane upper surface in gap of the light blocking powder between wantonly two light emitting devices, forms one first shading layer.
The present invention also provides a kind of encapsulation procedure of light emitting module, feature the following steps are included:
A substrate is provided, the upper surface of the substrate has a plurality of position reference points；
Stick a hyaline membrane in the substrate, wherein the hyaline membrane has a upper surface and a lower surface, the following table face contact base
The upper surface of plate；
Stick a wafer in the upper surface of the hyaline membrane, wherein the position of the wafer is based on a plurality of position reference point institutes
Determine, which has an electrode surface and a light-emitting surface relative to electrode surface of a tool electrode, the electrode face contact of the wafer this thoroughly
The upper surface of bright film；
One first colour temperature fluorescence coating and one second colour temperature fluorescence coating are formed on the light-emitting surface；
It overturns the wafer and sticks the wafer in the upper surface of the hyaline membrane, the electrode of the wafer faces upward；
The wafer is cut, the gap between a plurality of light emitting devices and wantonly two light emitting devices is formed；
A shading layer is formed in the gap；
Cut the shading layer.
In one embodiment, the position reference point is can be distinguished by a wafer handling system, bonder, chip mounter or arranging machine
Point, the line or close-shaped of knowledge.
In one embodiment, the upper surface and the lower surface of the hyaline membrane, which has, is stained with glue, and the material for being stained with glue includes silica gel, pressure
Gram force glue, UV glue, the mixture for being pyrolyzed glue or above-mentioned any combination.
In one embodiment, the encapsulation procedure as described in claim the 1st, further includes steps of
A photoresist layer is formed on the light-emitting surface.
In one embodiment, the fluorescence coating is free of glue.
In one embodiment, the shading layer include one first shading layer, form first shading layer the following steps are included:
Stick the hyaline membrane upper surface in gap of the light blocking powder between wantonly two light emitting devices, forms one first shading layer.
In one embodiment, it further includes steps of
A silicon dioxide layer is formed in the side of a plurality of light emitting devices.
Detailed description of the invention
The flow chart of the light emitting module encapsulation procedure of Fig. 1 system first embodiment of the invention.
The schematic diagram of the light emitting module encapsulation procedure of Fig. 2 system first embodiment of the invention.Fig. 3 A, 3B system substrate and position of the invention
Set the schematic diagram of reference point.
The flow chart of the light emitting module encapsulation procedure of Fig. 4 system second embodiment of the invention.
The schematic diagram of the light emitting module encapsulation procedure of Fig. 5 system second embodiment of the invention.
The schematic diagram of Fig. 6 system light emitting module of the invention.
Main element symbol description
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
In order to be illustrated concise and clearly, in appropriate place, identical label is repeatedly used mark in different drawings
Show corresponding or similar component.In addition, in order to provide to embodiment described herein deep understanding comprehensively, in specification
It can refer to many specific details.However, it will be understood by those skilled in the art that embodiment recited herein can also be with
It is not operated according to these specific details.In other cases, in order not to keeping the technical characteristic being described mixed
Confuse unclear, certain methods, process and component are not described in detail.It is not absolutely required to be equal with size in kind for schema.
In order to which details and technical characteristic is better described, the displaying ratio of specific part may be amplified in schema.In specification
Description is not considered as the restriction to scope of embodiments described herein.
Please refer to the flow chart and its schematic diagram of the light emitting device package of the first embodiment of the invention of Fig. 1 and Fig. 2 comprising such as
Lower step:
Step S110 provides the substrate 1 of a upper surface tool position reference point 2；
Step S120 sticks a hyaline membrane 5 in the upper surface of substrate 1；
The light-emitting surface 11 of a plurality of light emitting devices 10 is attached to hyaline membrane according to position reference point 2 by step S130, a bonder
5 upper surface；
Step S140, the gap 40 between wantonly two light emitting devices 10 form a shading layer 30；
Step S150 cuts the shading layer 30.
The step S110 for please referring to Fig. 1 and Fig. 2 provides the substrate 1 of a upper surface tool position reference point 2.The material of the substrate 1
Material can be, but be not limited to, ceramics, glass, glass fibre, metal, nylon, Teflon, acrylic or other plastic materials.
The upper surface of the substrate forms pattern in a manner of laser carved, ink printing or chemical etching etc., such as Fig. 3 A and 3B.The figure
Type includes a plurality of position reference points 2 that can be recognized by a bonder.The pattern of the position reference point 2 can be point, line
Or one is close-shaped, shifts basis on location when light emitting device or wafer automatically as the bonder.
The step S120 of Fig. 1 and Fig. 2 is please referred to, adheres to a hyaline membrane 5 in the upper surface of substrate 1.The upper surface of the hyaline membrane 5
And lower surface all has and is stained with glue, so that the lower surface of hyaline membrane 5 is attached to the upper surface of the substrate 1, upper surface can stick institute
Light emitting device 10 is stated, fixes light emitting device 10 relative to the position of substrate 1, mismachining tolerance caused by reducing because of displacement.Institute
The material for stating hyaline membrane 5 can be polyethylene terephthalate (PET), glass fibre, nylon, Teflon, acryl, cloth
The material for the position reference point 2 that material, plastics or other heat-resisting and its transparencies can allow bonder identification covered.
The material for being stained with glue can be, but be not limited to, silica gel, acryl glue, UV glue, pyrolysis glue or above-mentioned any combination
Mixture.
The step S130 of Fig. 1 and Fig. 2 is please referred to, a bonder is according to position reference point 2, by shining for a plurality of light emitting devices 10
Face 11 attaches to the upper surface of hyaline membrane 5.The light emitting device is a light-emitting diode chip for backlight unit or light-emitting diode chip for backlight unit warp
Additional fluorescence layer, shading layer, reflecting layer, optical waveguide layer, protective layer or aforementioned any combination encapsulating structure finished product.It is described to shine
Device 10 includes an electrode surface 12 and a light-emitting surface 11 opposite with the electrode surface 12 with electrode.The light emitting device 10
Electrode surface 12 attach to the hyaline membrane 5 downwards, can prevent fluorescent powder or glue in encapsulation process from investing electrode surface.
In step S130, the bonder is controlled with computer, is had ccd image sensing module and can be drawn light emitting device 10
Mechanical arm, by ccd image sensing module identifying position reference point 2, and the mechanical arm for controlling swing arm or slide bar form is drawn
Light emitting device 10 is put to a target position, and the absorption light emitting device 10 is simultaneously put its process to the target position and can be automated
Control.It is understood that the bonder be also possible to chip mounter, arranging machine or other can automatic identifying position reference point 2
And complete the machinery of the arrangement of light emitting device 10.
In step S130, the light emitting device 10 may include light emitting device more than a kind of colour temperature, such as the first color in Fig. 2
Warm light emitting device 15, the second colour temperature light emitting device 16 and third colour temperature light emitting device 17.The light emitting device 10 of different-colour can be with
It is the light-emitting diode chip for backlight unit manufactured by different materials, such as the blue and green light chip, GaAs of gallium nitride (GaN) processing procedure
(GaAs) red light chips of processing procedure；It is also possible to the light-emitting diode chip for backlight unit covered by different fluorescence coatings.
The fluorescence coating includes a plurality of luminous powders.The fluorescence coating can be fluorescence coating containing glue or without glue fluorescence coating.Institute
The preparation method for stating the fluorescence coating containing glue is that the homogeneous mixture of luminous powder and binder (glue) is applied to the light-emitting diodes
Tube chip surface, it can be epoxy resin or siliceous materials that this, which contains the glue on glue fluorescence coating,.It is described without glue fluorescence coating
Preparation method is the liquid for containing luminous powder to be applied to the light-emitting diode chip for backlight unit surface, then remove the liquid, makes institute
Luminous powder is stated to be condensed into blocks.The liquid is water or volatile solvent without glue, and the volatile solvent is selected from ethers, alcohol
One of class or ketone or the combination between them.The liquid phase applying mode containing luminous powder can be but be not limited to
Spraying or dipping.Mainly pass through extraction it is understood that removing the liquid step, banish or evaporate at a certain temperature
The liquid can be bound tightly together between the luminous powder by Fan get Wa Erli.
The luminous powder can absorb the light that the light-emitting diode chip for backlight unit issues and the light for forming specific colour temperature.Further
, what what the light-emitting diode chip for backlight unit issued can not be issued by the light that the luminous powder absorbs with the luminous powder
Light is mixed to form the light of colour temperature needed for user.
In the present embodiment, the luminous powder includes fluorescent powder.
The fluorescent powder is, for example, sulphide fluorescent material or unsulfided fluorescent powder.The unsulfided fluorescent powder is, for example, but
It is not limited to, yttrium aluminium garnet fluorescent powder (Yttrium Aluminum Garnet, abbreviation YAG), terbium aluminium garnet fluorescent powder
One of (Terbium Aluminum Garnet, abbreviation TAG), nitride or silicate or the combination between them.
The step S140 for please referring to Fig. 1 and Fig. 2, the gap 40 between wantonly two light emitting devices 10 form a shading layer 30.
The preparation method of the shading layer 30 is that the homogeneous mixture of light blocking powder and binder (glue) is applied to described wantonly two hairs
Gap 40 between electro-optical device 10.It can be carried out in such a way that blade or idler wheel print when coating.The material of the light blocking powder can be with
Be insulate carbon black, insulated metal, reflective or non-reflective organic plastics, to insulate plated film or coat the lighttight of means production
Ceramic powder or aluminium oxide powder, the color of light blocking powder can be black, white, grey or other colors.The binder can
To be epoxy resin, organic polymer, silica gel material.
In another embodiment of step S140, the preparation method of the shading layer 30 is that light blocking powder is sprayed on positioned at gap 40
5 upper surface of hyaline membrane form one layer of first shading layer (not shown) for being free of glue, then will resistance by the attached light blocking powder of gluing is stained with
The homogeneous mixture of light powder and binder (glue) is applied to the gap 40 between wantonly two light emitting devices 10, forms one second
Shading layer (not shown).
The step S150 for please referring to Fig. 1 and Fig. 2 cuts the shading layer 30.After forming shading layer 30,30 shape of shading layer is cut
Pluralize a light emitting module 100.Diamond cutter or laser cutter can be used in the cutting.It can be planned according to position reference point 2
Reference line is cut, is cut accordingly.
A plurality of light emitting modules 100 can be separated by heat or illumination methods with hyaline membrane 5, and use UV film or pyrolysis film
Light emitting module 100 is attached, is transferred on film spreading and is used for follow-up process.
It is understood that the film spreading is that the brilliant common material of production is expanded in this field.The material of the film spreading is, for example,
But it is not limited to, papery, polyethylene terephthalate (Polyethylene terephthalate, PET), is gathered cloth
Vinyl alcohol (polyvinyl alcohol, PVA) and nylon (Polyamide, PA), polyvinyl chloride (Polyvinylchlorid,
PVC), film made of polyethylene, polypropylene, polystyrene or other resins.The film spreading further includes a mucigel (in figure
Do not show).The mucigel is, for example, pellosil, acryl film or UV film.
Skilled artisans appreciate that, the UV film be special formulation coating is coated on PET film, PVC film,
The film substrates surfaces such as PO, polyethylene-polyvinyl acetate copolymer (Polyethylene vinylacetate, EVA)., when
When using the PO film substrate, UV film obtained is stable, adhesion is high and after the irradiation of UV curing, can dehesion to convenient
Take the luminous light emitting device 10.When using the PET film substrate, UV film obtained can be bonded in dust free room to be made
With, suitable for the cutting of wafer, glass, ceramic wafer, and through UV light source irradiation after tear off not residue glue.
Skilled artisans appreciate that, the pyrolysis film is that coating heat is strippable on PET film substrate surface
Interim positioning glue, composition can be helped by acrylic acid 2- Methylethyl, the third rouge of ethylacrylic acid 2- ethyl, the removing of silicon oxypropylene
Agent, titanium dioxide, barium sulfate, epoxy crosslinking agent, initiators for polymerization mix in appropriate proportions.The pyrolysis film is heating
To suitable temperature, the stickiness of glue is positioned in completely disappearing in certain time, it can delamination.
Please refer to the flow chart and its schematic diagram of the light emitting device package of the second embodiment of the invention of Fig. 4 and Fig. 5 comprising such as
Lower step:
Step S210 provides the substrate 1 of a upper surface tool position reference point 2；
Step S220 sticks a hyaline membrane 5 in the upper surface of substrate 1；
The electrode surface 9 of one wafer 7 is attached to hyaline membrane 5 according to position reference point 2 by step S230, a wafer handling system
Upper surface；
(the step S240 of Fig. 4 includes the steps that Fig. 5 S241 to S247) to step S240, and it is glimmering to form one on the light-emitting surface 8 of Yu Jingyuan 7
Photosphere 20, the fluorescence coating 20 include the first colour temperature fluorescence coating 21 and one second colour temperature fluorescence coating 22；
Step S250, overturns the wafer 9 and attaches to the upper surface of hyaline membrane 5, and the electrode surface 9 of the wafer 9 is upward；
Step S260 cuts the wafer 9, forms the gap between a plurality of light emitting devices 10 and wantonly two light emitting devices 10
40；
Step S270 forms a shading layer 30 in gap 40 between wantonly two light emitting devices 10；
Step S280 cuts the shading layer 30.
The step S210 for please referring to Fig. 4 and Fig. 5 provides the substrate 1 of a upper surface tool position reference point 2.It is understood that
The material of the substrate 1 and structure in first embodiment with describing, and details are not described herein.
The step S220 of Fig. 4 and Fig. 5 is please referred to, adheres to a hyaline membrane 5 in the upper surface of substrate 1.It is understood that institute
The material and structure for stating hyaline membrane 5 in first embodiment with describing, and details are not described herein.
The step S230 of Fig. 4 and Fig. 5 is please referred to, a wafer handling system is according to position reference point 2, by the electrode surface 9 of a wafer 7
Attach to the upper surface of hyaline membrane 5.The wafer 7 is LED wafer, usually in sapphire wafer (substrate) surface
The multilayered structure of diode is formed through epitaxial growth process, and makes electrode, and a plurality of light-emitting diode chip for backlight unit can be obtained after cutting.Institute
Stating wafer 7 includes an electrode surface 9 and a light-emitting surface 8 opposite with the electrode surface 9 with electrode.The electrode surface 9 is downwards
The hyaline membrane 5 is attached to, can prevent fluorescent powder or glue in encapsulation process from investing electrode surface.
The wafer handling system is controlled with computer, is had ccd image sensing module and can be drawn or can catch and take luminous two
The mechanical arm of pole pipe wafer 7 by ccd image sensing module identifying position reference point 2, and controls the machine of swing arm or slide bar form
Tool arm, which is drawn or caught, takes wafer 7 to put to a target position.It is described draw wafer 7 and put its to the target position process can from
Dynamicization control.The wafer handling system be also possible to bonder, chip mounter, arranging machine or other can automatic identifying position reference
Point 2 and the machinery for completing the arrangement of wafer 7.
It please refers to and forms a fluorescence coating 20 on the light-emitting surface 8 of the step S240, Yu Jingyuan 7 of Fig. 4, which includes the first color
Warm fluorescence coating 21 and one second colour temperature fluorescence coating 22.It is understood that one can be further formed on the fluorescence coating 20 thoroughly
Bright protective layer 35.
In an implementation method, the step S240 of Fig. 4 can further comprise the step S241 to S247 of Fig. 5.
The step S241 for please referring to Fig. 5 is formed before the fluorescence coating 20, in the light-emitting surface 8 for being partly not required to the covering of fluorescence coating 20
One photoresist layer 6 of upper formation.The photoresist layer 6 can be removed, and then remove the fluorescence coating for being covered in the photoresist layer 6
20。
The step S242 for please referring to Fig. 5, in forming the first colour temperature fluorescence coating 21 on light-emitting surface 8 and photoresist layer 6, further
The protective layer 35 can be formed on the first colour temperature fluorescence coating 21.
The step S243 for please referring to Fig. 5, the first colour temperature fluorescence coating 21 and protective layer 35 by the photoresist layer 6 and thereon is together
It removes, retains the first colour temperature fluorescence coating 21 of part.
The step S244 for please referring to Fig. 5, in forming institute on part light-emitting surface 8, the first colour temperature fluorescence coating 21 or protective layer 35
State photoresist layer 6.
The step S245 for please referring to Fig. 5, in forming the second colour temperature fluorescence coating 22 on light-emitting surface 8 and photoresist layer 6, further
The protective layer 35 can be formed on the second colour temperature fluorescence coating 22.
The step S246 for please referring to Fig. 5, the second colour temperature fluorescence coating 22 and protective layer 35 by the photoresist layer 6 and thereon is together
It removes, retains the second colour temperature fluorescence coating 22 of part.
The step S247 for please referring to Fig. 5, in not formed the protective layer 35 on light-emitting surface 8 that fluorescence coating 20 is covered.
In step S241 and S244, the photoresist layer 6 is formed by photoresist, and photoresist includes positive photoresist and negative photoresist
Agent, wherein positive photoresist be formed by photoresist layer it is exposed after become solvable, be easily removed, negative photoresist is then opposite.It is described just
The material of photoresist can be phenolic aldehyde (Novolac) resin, can be dissolved by acetic acid type solvent after exposed.Utilize light shield lackey
Empty part is exposed, and the photoresist layer 6 on part light-emitting surface 8 can be removed, the fluorescence coating 20 is made to be formed directly in institute
It states on light-emitting surface 8.When to remove photoresist layer 6 and fluorescence coating 20 thereon and protective layer 35 together, using laser light into
Row processing.
In step S242 and S245, the fluorescence coating 20 includes a plurality of luminous powders.The luminous powder can absorb described
Light that light-emitting diode chip for backlight unit issues and form the light of specific colour temperature.Further, the light-emitting diode chip for backlight unit issues not
The light of colour temperature needed for user is mixed to form by the light that the light that the luminous powder absorbs can be issued with the luminous powder.Institute
Stating the first colour temperature fluorescence coating 21 and the second colour temperature fluorescence coating 22 includes different types of luminous powder, therefore can produce different-colour
Light.
In the present embodiment, the luminous powder includes fluorescent powder.
The fluorescent powder is, for example, sulphide fluorescent material or unsulfided fluorescent powder.The unsulfided fluorescent powder is, for example, but
It is not limited to, yttrium aluminium garnet fluorescent powder (Yttrium Aluminum Garnet, abbreviation YAG), terbium aluminium garnet fluorescent powder
One of (Terbium Aluminum Garnet, abbreviation TAG), nitride or silicate or the combination between them.
The fluorescence coating can be fluorescence coating containing glue or without glue fluorescence coating.The preparation method of the fluorescence coating containing glue is will to shine
The homogeneous mixture of powder and binder (glue) is applied to the light-emitting diode chip for backlight unit or crystal column surface.The glue is, for example, ring
Oxygen resin or siliceous materials.It can be carried out in such a way that blade prints or idler wheel prints when coating.It is described without glue fluorescence coating
Preparation method is the liquid for containing luminous powder to be applied to the light-emitting diode chip for backlight unit or crystal column surface, then remove the liquid
Body is condensed into blocks the luminous powder.The liquid is water or volatile solvent without glue, and the volatile solvent is selected from
One of ethers, alcohols or ketone or the combination between them.The liquid phase applying mode containing luminous powder is, for example,
But it is not limited to, spraying, impregnating mode.It is understood that remove the liquid step mainly pass through extraction, banish or
The liquid is evaporated at a certain temperature, can be bound tightly together by Fan get Wa Erli between the luminous powder.
Step S242, in S245 and S247, the protective layer 35 is for making light emitting device 10 be isolated from the outside world, to avoid the external world
Influence and pollution.To avoid influencing light extraction efficiency, the protective layer 35 is transparent or low absorptance material, is e.g. set
Rouge, silica gel or the other materials that the material is soft.The resin can be for example the lower epoxy resin of curing agent mixed proportion.It is excellent
Choosing, the mass mixing ratio of the curing agent and the epoxy resin is 1:1 or 1:4.It, can be with knife when being coated with the protective layer
Piece printing or idler wheel mode of printing.
Referring again to the step S250 of Fig. 4 and Fig. 5, the upper surface of hyaline membrane 5 is overturn the wafer 9 and attaches to, the wafer 9
Electrode surface 9 is upward.The wafer 7 can be separated by heat or illumination methods with hyaline membrane 5, be spun upside down with electrode surface 9 upward
And the mode downward of light-emitting surface 8, the wafer 7 is sticked according to position reference point by wafer handling system and is fixed on hyaline membrane 5.
Refering to the step S260 of Fig. 4 and Fig. 5, the wafer 9 is cut, forms a plurality of light emitting devices 10 and wantonly two light emitting devices
Gap 40 between 10.A plurality of light emitting devices 10 may include the first colour temperature light emitting device 15, second of different-colour
Colour temperature light emitting device 16, third colour temperature light emitting device 17.Diamond cutter or laser cutter can be used in the cutting.It can be according to position
The planning cutting reference line of reference point 2 is set, is cut accordingly.The size in the gap 40 can be determined by the width of cutting tool.
Refering to the step S270 of Fig. 4 and Fig. 5, a shading layer 30 is formed in gap 40 between wantonly two light emitting devices 10.
The preparation method of the shading layer 30 is that the homogeneous mixture of light blocking powder and binder (glue) is applied to the gap 40.Coating
When can be carried out in such a way that blade or idler wheel print.The material of the light blocking powder can be insulation carbon black, insulated metal, it is reflective or
Non-reflective organic plastics plated film or coats the lighttight ceramic powder or aluminium oxide powder of means production, light blocking to insulate
The color of powder can be black, white, grey or other colors.The binder can be epoxy resin, organic polymer, silicon
Glue material.
In another embodiment of step S270, the preparation method of the shading layer 30 is that light blocking powder is sprayed on positioned at gap 40
5 upper surface of hyaline membrane form one layer of first shading layer (not shown) for being free of glue, then will resistance by the attached light blocking powder of gluing is stained with
The homogeneous mixture of light powder and binder (glue) is applied to the gap 40 between wantonly two light emitting devices 10, forms one second
Shading layer (not shown).
It, can be in the side of the light emitting device 10 before forming the shading layer 30 in another embodiment of step S270
Layer of silicon dioxide layer is formed in a manner of sputtering.
Refering to the step S280 of Fig. 4 and Fig. 5, the shading layer 30 is cut.After forming shading layer 30, the formation of shading layer 30 is cut
A plurality of light emitting modules 100.Diamond cutter or laser cutter can be used in the cutting.It can plan and cut according to position reference point 2
Reference line is cut, is cut accordingly.
A plurality of light emitting modules 100 can be separated by heat or illumination methods with hyaline membrane 5, and use UV film or pyrolysis film
Light emitting module 100 is attached, is transferred on film spreading and is used for follow-up process.
It is understood that the film spreading is that the brilliant common material of production is expanded in this field.The material of the film spreading is, for example,
But it is not limited to, papery, polyethylene terephthalate (Polyethylene terephthalate, PET), is gathered cloth
Vinyl alcohol (polyvinyl alcohol, PVA) and nylon (Polyamide, PA), polyvinyl chloride (Polyvinylchlorid,
PVC), film made of polyethylene, polypropylene, polystyrene or other resins.The film spreading further includes a mucigel (in figure
Do not show).The mucigel is, for example, pellosil, acryl film or UV film.
Skilled artisans appreciate that, the UV film be special formulation coating is coated on PET film, PVC film,
The film substrates surfaces such as PO, polyethylene-polyvinyl acetate copolymer (Polyethylene vinylacetate, EVA)., when
When using the PO film substrate, UV film obtained is stable, adhesion is high and after the irradiation of UV curing, can dehesion to convenient
Take the luminous light emitting device 10.When using the PET film substrate, UV film obtained can be bonded in dust free room to be made
With, suitable for the cutting of wafer, glass, ceramic wafer, and through UV light source irradiation after tear off not residue glue.
Skilled artisans appreciate that, the pyrolysis film is that coating heat is strippable on PET film substrate surface
Interim positioning glue, composition can be helped by acrylic acid 2- Methylethyl, the third rouge of ethylacrylic acid 2- ethyl, the removing of silicon oxypropylene
Agent, titanium dioxide, barium sulfate, epoxy crosslinking agent, initiators for polymerization mix in appropriate proportions.The pyrolysis film is heating
To suitable temperature, the stickiness of glue is positioned in completely disappearing in certain time, it can delamination.
Referring to Fig. 6, the light emitting module 100 includes a plurality of light emitting devices 10, it may include more than one that this, which shines and sets 10,
The light emitting device 15,16,17 of different-colour, the side of each light emitting device 10 are covered by shading layer 30, prevent a plurality of hairs
The lateral light of electro-optical device 10 is interfering with each other.
Above-described embodiment is preferred embodiments of the present invention, but the embodiment of the present invention and is not restricted to the described embodiments, with
Upper embodiment is only for explaining claim.Right protection scope of the present invention is not limited to specification.It is any to be familiar with
Within the technical scope of the present disclosure, the variation or replacement that can be readily occurred in all include those skilled in the art
Within protection scope of the present invention.
Claims (12)
1. a kind of encapsulation procedure of light emitting module, feature the following steps are included:
A substrate is provided, the upper surface of the substrate has a plurality of position reference points；
Stick a hyaline membrane in the substrate, wherein the hyaline membrane has a upper surface and a lower surface, the following table face contact base
The upper surface of plate；
Stick a plurality of light emitting devices in the upper surface of the hyaline membrane, wherein the position of a plurality of light emitting devices is to be based on being somebody's turn to do
A plurality of position reference points are determined that each light emitting device has electrode surface and shining relative to electrode surface for a tool electrode
Face, the upper surface of the luminous face contact hyaline membrane of the light emitting device；
Form gap of the shading layer between wantonly two light emitting devices；
Cut the shading layer in the gap between wantonly two light emitting devices.
2. encapsulation procedure as described in claim 1, the position reference point is can be by a bonder, chip mounter or arranging machine institute
Point, the line or close-shaped of identification.
3. encapsulation procedure as described in claim 1, the upper surface and the lower surface of the hyaline membrane, which has, is stained with glue, the glue of being stained with
Material includes the mixture of silica gel, acryl glue, UV glue, pyrolysis glue or said combination.
4. encapsulation procedure as described in claim 1, a plurality of light emitting devices include at least one first colour temperature light emitting device
And one second colour temperature light emitting device.
5. encapsulation procedure as described in claim 1, the shading layer includes one first shading layer, forms the first shading layer packet
Include following steps:
Stick the hyaline membrane upper surface in gap of the light blocking powder between wantonly two light emitting devices, forms one first shading layer.
6. a kind of encapsulation procedure of light emitting module, feature the following steps are included:
A substrate is provided, the upper surface of the substrate has a plurality of position reference points；
Stick a hyaline membrane in the substrate, wherein the hyaline membrane has a upper surface and a lower surface, the following table face contact base
The upper surface of plate；
Stick a wafer in the upper surface of the hyaline membrane, wherein the position of the wafer is based on a plurality of position reference point institutes
Determine, which has an electrode surface and a light-emitting surface relative to electrode surface of a tool electrode, the electrode face contact of the wafer this thoroughly
The upper surface of bright film；
One first colour temperature fluorescence coating and one second colour temperature fluorescence coating are formed on the light-emitting surface；
It overturns the wafer and sticks the wafer in the upper surface of the hyaline membrane, the electrode of the wafer faces upward；
The wafer is cut, the gap between a plurality of light emitting devices and wantonly two light emitting devices is formed；
A shading layer is formed in the gap；
Cut the shading layer.
7. encapsulation procedure as claimed in claim 6, the position reference point is can be by a wafer handling system, bonder, patch
Point that piece machine or arranging machine are recognized, line or close-shaped.
8. encapsulation procedure as claimed in claim 6, the upper surface and the lower surface of the hyaline membrane, which has, is stained with glue, the glue of being stained with
Material includes the mixture of silica gel, acryl glue, UV glue, pyrolysis glue or above-mentioned any combination.
9. encapsulation procedure as claimed in claim 6, further includes steps of
A photoresist layer is formed on the light-emitting surface.
10. encapsulation procedure as claimed in claim 6, the fluorescence coating is free of glue.
11. encapsulation procedure as claimed in claim 6, the shading layer includes one first shading layer, forms first shading layer
The following steps are included:
Stick the hyaline membrane upper surface in gap of the light blocking powder between wantonly two light emitting devices, forms one first shading layer.
12. encapsulation procedure as claimed in claim 6, further includes steps of
A silicon dioxide layer is formed in the side of a plurality of light emitting devices.
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| CN201811368765.5A CN109830496A (en) | 2018-11-16 | 2018-11-16 | Light emitting module encapsulation procedure |
| PCT/CN2019/114622 WO2020098502A1 (en) | 2018-11-16 | 2019-10-31 | Packaging process for light-emitting module |
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| CN201811368765.5A CN109830496A (en) | 2018-11-16 | 2018-11-16 | Light emitting module encapsulation procedure |
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| TWI686566B (en) * | 2019-09-09 | 2020-03-01 | 均豪精密工業股份有限公司 | Light emitting module and manufacturing method thereof |
| WO2020098502A1 (en) * | 2018-11-16 | 2020-05-22 | 吴裕朝 | Packaging process for light-emitting module |
| CN111952429A (en) * | 2020-08-12 | 2020-11-17 | 东莞市诚信兴智能卡有限公司 | LED CSP multicolor packaging production process |
| WO2021109009A1 (en) * | 2019-12-03 | 2021-06-10 | 重庆康佳光电技术研究院有限公司 | Light-emitting diode and manufacturing method therefor, light-emitting diode module, and display device |
| CN114695606A (en) * | 2022-04-18 | 2022-07-01 | 东莞市中麒光电技术有限公司 | Light-emitting chip manufacturing method and light-emitting chip |
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| WO2020098502A1 (en) * | 2018-11-16 | 2020-05-22 | 吴裕朝 | Packaging process for light-emitting module |
| TWI686566B (en) * | 2019-09-09 | 2020-03-01 | 均豪精密工業股份有限公司 | Light emitting module and manufacturing method thereof |
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| CN113228317B (en) * | 2019-12-03 | 2023-08-29 | 重庆康佳光电科技有限公司 | Light emitting diode, manufacturing method thereof, light emitting diode module and display device |
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| CN114695606A (en) * | 2022-04-18 | 2022-07-01 | 东莞市中麒光电技术有限公司 | Light-emitting chip manufacturing method and light-emitting chip |
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