TWI692124B - Light emitting module packaging process - Google Patents
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本發明涉及一種光源模組的封裝方法。The invention relates to a packaging method of a light source module.
由於發光二極體(Light Emitting Diode,簡稱LED)具有高亮度、體積小、重量輕、不易破損、低耗電量和壽命長等優點,所以被廣泛地應用各式發光產品及顯示產品中。其發光原理主要是通過施加一電壓於二極體上,驅使二極體內的電子與電洞結合,結合所產生的能量以光的形式釋放出來。此外,習知的發光裝置主要通過對發光二極體晶片的表面進行改性,以調整發光波長(顏色)與強度。Light Emitting Diode (LED) has the advantages of high brightness, small size, light weight, not easy to break, low power consumption and long life, so it is widely used in various light-emitting products and display products. The principle of light emission is mainly to apply a voltage to the diode to drive the electrons in the diode to combine with the hole, and the energy generated by the combination is released in the form of light. In addition, the conventional light-emitting device mainly modifies the surface of the light-emitting diode wafer to adjust the light-emitting wavelength (color) and intensity.
在發光二極體的封裝製程中,會在晶片的四周形成螢光層、阻光層、保護層等結構,以達成改變色溫、控制發光角度、調整封裝結構、保護晶片以延長使用年限等多種目的。In the packaging process of light-emitting diodes, a fluorescent layer, a light-blocking layer, a protective layer and other structures are formed around the chip to achieve changes in color temperature, control of the light-emitting angle, adjustment of the packaging structure, protection of the chip to extend the service life, etc. purpose.
目前,為了提高發光二極體的散熱效率、增加應用範圍,如何生產小體積的發光二極體晶片是一重要議題。自正裝晶片、倒裝晶片、次毫米晶片 (mini LED)至微米晶片 (micro LED),晶片尺寸由數百微米縮小至數十微米,甚至微米晶片僅有15微米。尺寸縮小連帶使封裝製程難度提高,特別是因晶片擺放位置偏差或因加工使位置偏移,將導致未能準確形成封裝結構層、切割不精確,降低了封裝製程的良率。At present, in order to improve the heat dissipation efficiency of the light emitting diode and increase the application range, how to produce a small volume light emitting diode chip is an important issue. From formal wafers, flip-chips, sub-millimeter wafers (mini LED) to micro-LEDs (micro LEDs), the size of the wafers has been reduced from hundreds of microns to tens of microns, and even micro-wafers are only 15 microns. The shrinking of the size makes the packaging process more difficult, especially due to the deviation of the placement of the wafer or the position shift due to processing, which will lead to the failure to accurately form the packaging structure layer and the inaccurate cutting, which reduces the yield of the packaging process.
鑒於以上內容,有必要提供一種在封裝過程中以黏性沾膠固定發光裝置或發光二極體晶圓,進而減少加工誤差、提高封裝製程良率的光源模組封裝製程。In view of the above, it is necessary to provide a light source module packaging process for fixing the light-emitting device or the light-emitting diode wafer with adhesive glue during the packaging process, thereby reducing processing errors and improving the yield of the packaging process.
一種光源模組的封裝製程,其特徵包括以下步驟: 提供一基板,該基板的上表面具有複數個位置參考點; 黏附一透明膜於該基板,其中,該透明膜具有一上表面及一下表面,該下表面接觸該基板的上表面; 黏附複數個發光裝置於該透明膜的上表面,其中,該複數個發光裝置的位置是基於該複數個位置參考點所決定,每一發光裝置有一具電極的電極面及一相對於電極面的發光面,該發光裝置的發光面接觸該透明膜的上表面; 形成一阻光層於任二個該發光裝置之間的間隙; 切割任二個該發光裝置之間的間隙的阻光層。The packaging process of a light source module includes the following steps: providing a substrate with a plurality of position reference points on the upper surface of the substrate; adhering a transparent film to the substrate, wherein the transparent film has an upper surface and a lower surface , The lower surface contacts the upper surface of the substrate; adhere a plurality of light-emitting devices to the upper surface of the transparent film, wherein the positions of the plurality of light-emitting devices are determined based on the plurality of position reference points, each light-emitting device has a The electrode surface of the electrode and a light-emitting surface opposite to the electrode surface, the light-emitting surface of the light-emitting device contacts the upper surface of the transparent film; forming a light-blocking layer between any two of the light-emitting device gap; cutting any two of the light-emitting device The light blocking layer of the gap between the light emitting devices.
在一實施例中,所述位置參考點是可被一固晶機、貼片機或排片機所辨識的點、線或封閉形狀。In one embodiment, the position reference point is a point, line, or closed shape that can be recognized by a die bonding machine, a placement machine, or a wafer arranging machine.
在一實施例中,所述透明膜的上表面及下表面具有沾膠,所述沾膠的材料包括矽膠、壓克力膠、UV膠、熱解膠或上述任意組合的混合物。In one embodiment, the upper surface and the lower surface of the transparent film have a dip glue, and the material of the dip glue includes silicon glue, acrylic glue, UV glue, pyrolysis glue, or a mixture of any combination of the above.
在一實施例中,所述複數個發光裝置包括至少一第一色溫發光裝置及一第二色溫發光裝置。In an embodiment, the plurality of light-emitting devices include at least a first color temperature light-emitting device and a second color temperature light-emitting device.
在一實施例中,所述阻光層包括一第一阻光層,形成該第一阻光層包括以下步驟: 黏附阻光粉粒於任二個該發光裝置之間的間隙的透明膜上表面,形成一第一阻光層。In one embodiment, the light-blocking layer includes a first light-blocking layer, and the forming of the first light-blocking layer includes the following steps: adhering the light-blocking powder particles to any two transparent films in the gap between the light-emitting devices On the surface, a first light-blocking layer is formed.
本發明還提供一種光源模組的封裝製程,其特徵包括以下步驟: 提供一基板,該基板的上表面具有複數個位置參考點; 黏附一透明膜於該基板,其中,該透明膜具有一上表面及一下表面,該下表面接觸該基板的上表面; 黏附一晶圓於該透明膜的上表面,其中,該晶圓的位置是基於該複數個位置參考點所決定,該晶圓有一具電極的電極面及一相對於電極面的發光面,該晶圓的電極面接觸該透明膜的上表面; 形成一第一色溫螢光層及一第二色溫螢光層於該發光面上; 翻轉該晶圓並黏附該晶圓於該透明膜的上表面,該晶圓的電極面向上; 切割該晶圓,形成複數個發光裝置及任二個該發光裝置之間的間隙; 形成一阻光層於該間隙; 切割該阻光層。The invention also provides a packaging process for a light source module, which includes the following steps: providing a substrate with a plurality of position reference points on the upper surface of the substrate; adhering a transparent film to the substrate, wherein the transparent film has a top The surface and the lower surface, the lower surface contacts the upper surface of the substrate; adhere a wafer to the upper surface of the transparent film, wherein the position of the wafer is determined based on the plurality of position reference points, the wafer has a An electrode surface of the electrode and a light emitting surface opposite to the electrode surface, the electrode surface of the wafer contacts the upper surface of the transparent film; forming a first color temperature fluorescent layer and a second color temperature fluorescent layer on the light emitting surface; Turn the wafer over and attach the wafer to the upper surface of the transparent film, with the electrode of the wafer facing upward; cut the wafer to form a gap between a plurality of light-emitting devices and any two of the light-emitting devices; forming a resistance The light layer is in the gap; the light blocking layer is cut.
在一實施例中,所述位置參考點是可被一晶圓搬運系統、固晶機、貼片機或排片機所辨識的點、線或封閉形狀。In one embodiment, the position reference point is a point, line, or closed shape that can be recognized by a wafer handling system, a die bonding machine, a placement machine, or a wafer arranging machine.
在一實施例中,所述透明膜的上表面及下表面具有沾膠,所述沾膠的材料包括矽膠、壓克力膠、UV膠、熱解膠或上述任意組合的混合物。In one embodiment, the upper surface and the lower surface of the transparent film have a dip glue, and the material of the dip glue includes silicon glue, acrylic glue, UV glue, pyrolysis glue, or a mixture of any combination of the above.
在一實施例中,如申請專利範圍第1項所述之封裝製程,進一步包括以下步驟: 形成一光阻劑層於該發光面上。In one embodiment, the packaging process described in
在一實施例中,所述螢光層不含膠。In one embodiment, the fluorescent layer contains no glue.
在一實施例中,所述阻光層包括一第一阻光層,形成該第一阻光層包括以下步驟: 黏附阻光粉粒於任二個該發光裝置之間的間隙的透明膜上表面,形成一第一阻光層。In one embodiment, the light-blocking layer includes a first light-blocking layer, and the forming of the first light-blocking layer includes the following steps: adhering the light-blocking powder particles to any two transparent films in the gap between the light-emitting devices On the surface, a first light-blocking layer is formed.
在一實施例中,進一步包括以下步驟: 形成一二氧化矽層於該複數個發光裝置的側面。In one embodiment, the method further includes the following steps: forming a silicon dioxide layer on the sides of the plurality of light-emitting devices.
為了簡明清楚地進行說明,在恰當的地方,相同的標號在不同圖式中被重複地用於標示對應的或相類似的元件。此外,為了提供對此處所描述實施例全面深入的理解,說明書中會提及許多特定的細節。然而,本領域技術人員可以理解的是此處所記載的實施例也可以不按照這些特定細節進行操作。在其他的一些情況下,為了不使正在被描述的技術特徵混淆不清,一些方法、流程及元件並未被詳細地描述。圖式並不一定需要與實物的尺寸等同。為了更好地說明細節及技術特徵,圖式中特定部分的展示比例可能會被放大。說明書中的描述不應被認為是對此處所描述的實施例範圍的限定。For concise and clear description, the same reference numerals are used repeatedly in different drawings to indicate corresponding or similar elements where appropriate. In addition, in order to provide a comprehensive and in-depth understanding of the embodiments described herein, many specific details are mentioned in the description. However, those skilled in the art may understand that the embodiments described herein may not operate according to these specific details. In other cases, in order not to confuse the technical features being described, some methods, processes, and components have not been described in detail. The drawing does not necessarily need to be the same as the actual size. In order to better explain the details and technical features, the proportion of specific parts of the drawings may be enlarged. The description in the specification should not be considered as limiting the scope of the embodiments described herein.
請參閱圖1及圖2的本發明第一實施例的發光裝置封裝的流程圖及其示意圖,其包括如下步驟: 步驟S110,提供一個上表面具位置參考點2的基板1; 步驟S120,黏附一透明膜5於基板1的上表面; 步驟S130,一固晶機依據位置參考點2,將複數個發光裝置10的發光面11黏附於透明膜5的上表面; 步驟S140,於任二個該發光裝置10之間的間隙40形成一阻光層30; 步驟S150,切割該阻光層30。Please refer to FIG. 1 and FIG. 2 for the flowchart and schematic diagram of the light emitting device package according to the first embodiment of the present invention, which includes the following steps: Step S110, providing a
請參閱圖1及圖2的步驟S110,提供一個上表面具位置參考點2的基板1。所述基板1的材料可以是,但不侷限於,陶瓷、玻璃、玻璃纖維、金屬、尼龍、鐵氟龍、亞克力或其他塑膠材料。所述基板的上表面以雷射雕刻、油墨印刷或化學蝕刻等方式形成圖型,如圖3A及3B。所述圖型包括可被一固晶機所辨識的複數個位置參考點2。所述位置參考點2的樣式可以是點、線或一封閉形狀,作為所述固晶機自動轉移發光裝置或晶圓時的定位依據。Please refer to step S110 of FIG. 1 and FIG. 2 to provide a
請參閱圖1及圖2的步驟S120,附著一透明膜5於基板1的上表面。所述透明膜5的上表面及下表面皆具有沾膠,使透明膜5的下表面能黏附於所述基板1的上表面,上表面能黏附所述發光裝置10,使發光裝置10相對於基板1的位置固定,降低因位移而導致的加工誤差。所述透明膜5的材料可以是聚乙烯對苯二甲酸酯 (PET)、玻璃纖維、尼龍、鐵氟龍、壓克力、布料、塑膠或其他耐熱且其透明度可讓固晶機辨識所覆蓋的位置參考點2的材料。Please refer to step S120 of FIGS. 1 and 2, a
所述沾膠的材料可以是,但不侷限於,矽膠、壓克力膠、UV膠、熱解膠或上述任意組合的混合物。The material of the glue may be, but not limited to, silicone glue, acrylic glue, UV glue, pyrolysis glue or a mixture of any combination of the above.
請參閱圖1及圖2的步驟S130,一固晶機依據位置參考點2,將複數個發光裝置10的發光面11黏附於透明膜5的上表面。所述發光裝置是一發光二極體晶片或一發光二極體晶片經附加螢光層、阻光層、反射層、導光層、保護層或前述任意組合的封裝結構的成品。所述發光裝置10包括一具有電極的電極面12及一與所述電極面12相對的發光面11。所述發光裝置10的電極面12向下黏附於所述透明膜5,可以防止封裝過程中螢光粉或膠附於電極表面。Referring to step S130 of FIGS. 1 and 2, a die bonding machine adheres the
步驟S130中,所述固晶機是以電腦控制,具有CCD圖像傳感模組及可吸取發光裝置10的機械臂,藉由CCD圖像傳感模組辨識位置參考點2,並控制擺臂或滑桿形式的機械臂吸取發光裝置10放至一目標位置,所述吸取發光裝置10並擺放其至該目標位置的過程可自動化控制。可以理解的是,所述固晶機也可以是貼片機、排片機或其他可自動辨識位置參考點2並完成發光裝置10排列的機械。In step S130, the die bonding machine is controlled by a computer, has a CCD image sensor module and a mechanical arm that can absorb the light-
步驟S130中,所述發光裝置10可以包括一種色溫以上的發光裝置,例如圖2中的第一色溫發光裝置15、第二色溫發光裝置16及第三色溫發光裝置17。不同色溫的發光裝置10可以是由不同的材料製造的發光二極體晶片,例如氮化鎵(GaN)製程的藍光、綠光晶片、砷化鎵(GaAs)製程的紅光晶片;也可以是由不同螢光層覆蓋的發光二極體晶片。In step S130, the light-
所述螢光層包含複數個發光粉粒。所述螢光層可以是含膠螢光層或不含膠螢光層。所述含膠螢光層的製備方法是將發光粉粒及黏合劑(膠)的均勻混合物塗佈至所述發光二極體晶片表面,該含膠螢光層上的所述膠可為環氧樹脂或矽膠類物質。所述不含膠螢光層的製備方法是將含發光粉粒的液體施加於所述發光二極體晶片表面,再移除所述液體,使所述發光粉粒凝結成塊。所述液體為不含膠的水或揮發性溶劑,所述揮發性溶劑選自醚類、醇類或酮類中的一種或它們之間的組合。所述含發光粉粒的液體相施加方式可為但不侷限於噴塗或浸漬。可以理解的是,移除所述液體步驟主要通過抽取、流放或是在一定溫度下蒸發所述液體,所述發光粉粒之間能夠通過凡得瓦爾力緊密地結合在一起。另一種所述不含膠螢光層的製備方法是將發光粉粒製成非導體的靶材,以濺射成型方式於所述發光二極體晶片表面形成螢光層。The fluorescent layer includes a plurality of luminescent powder particles. The fluorescent layer may be a glue-containing fluorescent layer or a glue-free fluorescent layer. The preparation method of the glue-containing fluorescent layer is to apply a uniform mixture of luminescent powder and binder (glue) to the surface of the light-emitting diode wafer, and the glue on the glue-containing fluorescent layer may be a ring Oxygen resin or silicone materials. The preparation method of the glue-free fluorescent layer is to apply a liquid containing luminescent powder particles to the surface of the light-emitting diode wafer, and then remove the liquid to cause the luminescent powder particles to condense into a mass. The liquid is glue-free water or a volatile solvent, and the volatile solvent is selected from one of ethers, alcohols or ketones or a combination thereof. The application method of the liquid phase containing luminescent powder particles may be, but not limited to, spraying or dipping. It can be understood that the step of removing the liquid is mainly through extraction, discharge or evaporation of the liquid at a certain temperature, and the luminescent powder particles can be tightly bound together by the Van der Waals force. Another method for preparing the glue-free fluorescent layer is to make the luminescent powder particles into a non-conducting target material and form a fluorescent layer on the surface of the light-emitting diode wafer by sputtering molding.
所述發光粉粒能夠吸收所述發光二極體晶片發出的光而形成特定色溫的光。進一步的,所述發光二極體晶片發出的未被所述發光粉粒吸收的光能夠與所述發光粉粒所發出的光混合形成用戶所需色溫的光。The light-emitting powder particles can absorb light emitted by the light-emitting diode wafer to form light with a specific color temperature. Further, the light emitted by the light-emitting diode wafer that is not absorbed by the light-emitting powder particles can be mixed with the light emitted by the light-emitting powder particles to form light with a color temperature desired by the user.
在本實施例中,所述發光粉粒包括螢光粉。In this embodiment, the luminescent powder particles include phosphor powder.
所述螢光粉例如是硫化物螢光粉或非硫化物螢光粉。所述非硫化物螢光粉例如是,但不局限於,釔鋁石榴石螢光粉(Yttrium Aluminum Garnet,簡稱YAG)、鋱鋁石榴石螢光粉(Terbium Aluminum Garnet,簡稱TAG)、氮化物或矽酸鹽中的一種或它們之間的組合。The phosphor is, for example, a sulfide phosphor or a non-sulfide phosphor. The non-sulfide phosphor powder is, for example, but not limited to, Yttrium Aluminum Garnet (YAG), Terbium Aluminum Garnet (TAG), nitride or silicate One or a combination of them.
所述量子點是3個維度都在100 nm以下的奈米材料,具有量子限量化效應,可以激發出不同色溫的螢光。量子點吸收能量較高的光波後產生能階躍升,當電子從高能階的狀態降到低能階的狀態時,會發射出波長較長(偏紅光系)的光,其能量間隙隨尺寸增大而變小,因此由改變量子點尺寸可控制其發出的螢光色溫。量子點的種類包括金屬量子點及非金屬量子點,其中,金屬量子點材料可以是硒化鎘、硫化鎘或磷化銦,非金屬量子點材料可以是石墨烯、氧化石墨烯,所述非金屬量子點可進一步摻雜其他元素或以基團修飾達成改變性質的目的。The quantum dots are nanomaterials whose three dimensions are all below 100 nm, have quantum limiting effect, and can excite fluorescence with different color temperatures. Quantum dots absorb light waves with higher energy and produce energy step-ups. When electrons fall from a high-energy state to a low-energy state, they emit light with a longer wavelength (reddish light system), and the energy gap increases with size. Larger and smaller, so the color temperature of the fluorescent light emitted by the quantum dot can be controlled by changing its size. The types of quantum dots include metal quantum dots and non-metallic quantum dots, wherein the metal quantum dot material can be cadmium selenide, cadmium sulfide or indium phosphide, and the non-metallic quantum dot material can be graphene or graphene oxide. Metal quantum dots can be further doped with other elements or modified with groups to achieve the purpose of changing properties.
請參閱圖1及圖2的步驟S140,於任二個該發光裝置10之間的間隙40形成一阻光層30。所述阻光層30的製備方法是將阻光粉及黏合劑(膠)的均勻混合物塗佈至所述任二個該發光裝置10之間的間隙40。塗佈時可以刀片或滾輪印刷的方式進行。所述阻光粉的材料可以是絕緣碳黑、絕緣金屬、反光或不反光的有機塑膠、以絕緣鍍膜或包覆手段製作的不透光的陶瓷粉或三氧化二鋁粉,阻光粉的顏色可以是黑色、白色、灰色或其他顏色。所述黏合劑可以是環氧樹脂、有機聚合物、矽膠材料。Referring to step S140 of FIGS. 1 and 2, a
步驟S140的另一實施方式中,所述阻光層30的製備方法是將阻光粉噴灑於位於間隙40的透明膜5上表面,藉由沾膠黏附阻光粉,形成一層不含膠的第一阻光層(未示出),再將阻光粉及黏合劑(膠)的均勻混合物塗佈至所述任二個發光裝置10之間的間隙40,形成一第二阻光層(未示出)。In another embodiment of step S140, the preparation method of the light-blocking
請參閱圖1及圖2的步驟S150,切割該阻光層30。形成阻光層30後,切割所述阻光層30形成複數個光源模組100。所述切割可以使用鑽石刀或雷射切割機。可依據位置參考點2規劃切割參考線,據以切割。Please refer to step S150 of FIGS. 1 and 2 to cut the
所述複數個光源模組100可以藉由熱或光照方式與透明膜5分離,並使用UV膜或熱解膜沾附光源模組100,轉移至擴張膜上供後續製程使用。The plurality of
可以理解的是,所述擴張膜是本領域擴晶製作常用的材料。所述擴張膜的材料例如是,但不局限於,紙質、布料、聚對苯二甲酸乙二醇酯(Polyethylene terephthalate,PET)、聚乙烯醇(polyvinyl alcohol,PVA)及尼龍(Polyamide,PA)、聚氯乙烯(Polyvinylchlorid,PVC)、聚乙烯、聚丙烯、聚苯乙烯或其他樹脂製成的薄膜。所述擴張膜還包括一黏膠層(圖中未示)。所述黏膠層例如是矽膠膜、壓克力膜或是UV膜。It can be understood that the expansion film is a material commonly used in the field of crystal expansion. The material of the expansion membrane is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA) and nylon (Polyamide, PA) , Polyvinyl chloride (Polyvinylchlorid, PVC), polyethylene, polypropylene, polystyrene or other resins made of film. The expansion membrane also includes an adhesive layer (not shown). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.
本領域技術人員能夠理解的,所述UV膜是將特殊配方塗料塗布於PET薄膜、PVC薄膜、PO、聚乙烯-聚醋酸乙烯酯共聚物(Polyethylene vinylacetate,EVA)等薄膜基材表面。當使用所述PO薄膜基材時,製得的UV薄膜穩定、黏著力高且經UV固化機照射後,可減黏至方便取所述發光發光裝置10。當使用所述PET薄膜基材時,製得的UV薄膜能夠於無塵室貼合使用、適合用於晶圓、玻璃、陶瓷板的切割,並且經UV光源照射後撕離不殘膠。A person skilled in the art can understand that the UV film is coated with a specially formulated coating on the surface of a film substrate such as PET film, PVC film, PO, polyethylene-polyvinyl acetate copolymer (EVA) and the like. When the PO film substrate is used, the prepared UV film is stable, has high adhesion, and after being irradiated by the UV curing machine, the viscosity can be reduced until the light-emitting light-emitting
本領域技術人員能夠理解的,所述熱解膜是在PET薄膜基材表面上塗佈遇熱可剝離的臨時定位膠,其組成可以由丙烯酸2-甲基乙酯、乙基丙烯酸2-乙基丙脂、 矽氧丙烯剝離助劑、鈦白粉、硫酸鋇、環氧交聯劑、聚合反應引發劑以適當比例混合而成。所述熱解膜在加熱至合適溫度後,定位膠的黏性於一定時間內完全消失,可輕易分離。It can be understood by those skilled in the art that the pyrolysis film is a temporary positioning adhesive coated on the surface of the PET film substrate that can be peeled off with heat, and its composition may be composed of 2-methyl ethyl acrylate and 2-ethyl ethyl acrylate Propylene glycol, silicon oxypropylene peeling aid, titanium dioxide, barium sulfate, epoxy crosslinking agent, polymerization initiator are mixed in an appropriate ratio. After the pyrolysis film is heated to a suitable temperature, the viscosity of the positioning glue completely disappears within a certain period of time and can be easily separated.
請參閱圖4及圖5的本發明第二實施例的發光裝置封裝的流程圖及其示意圖,其包括如下步驟: 步驟S210,提供一個上表面具位置參考點2的基板1; 步驟S220,黏附一透明膜5於基板1的上表面; 步驟S230,一晶圓搬運系統依據位置參考點2,將一晶圓7的電極面9黏附於透明膜5的上表面; 步驟S240 (圖4的步驟S240包括圖5的步驟S241至S247),於晶圓7的發光面8上形成一螢光層20,該螢光層20包括第一色溫螢光層21及一第二色溫螢光層22; 步驟S250,翻轉將該晶圓9並黏附於透明膜5的上表面,該晶圓9的電極面9向上; 步驟S260,切割該晶圓9,形成複數個發光裝置10及任二個該發光裝置10之間的間隙40; 步驟S270,於任二個該發光裝置10之間的於間隙40形成一阻光層30; 步驟S280,切割該阻光層30。Please refer to FIG. 4 and FIG. 5 for a flowchart and a schematic diagram of a light emitting device package according to a second embodiment of the present invention, which includes the following steps: Step S210, providing a substrate 1 with a position reference point 2 on the upper surface; Step S220, adhesion A transparent film 5 on the upper surface of the substrate 1; step S230, a wafer handling system adheres the electrode surface 9 of a wafer 7 to the upper surface of the transparent film 5 according to the position reference point 2; step S240 (step of FIG. 4 S240 includes steps S241 to S247 in FIG. 5), a fluorescent layer 20 is formed on the light-emitting surface 8 of the wafer 7, the fluorescent layer 20 includes a first color temperature fluorescent layer 21 and a second color temperature fluorescent layer 22; Step S250, flip and attach the wafer 9 to the upper surface of the transparent film 5, the electrode surface 9 of the wafer 9 is upward; Step S260, cut the wafer 9 to form a plurality of light emitting devices 10 and any two of the light emitting The gap 40 between the devices 10; Step S270, forming a light blocking layer 30 in the gap 40 between any two of the light emitting devices 10; Step S280, cutting the light blocking layer 30.
請參閱圖4及圖5的步驟S210,提供一個上表面具位置參考點2的基板1。可以理解的是,所述基板1的材料及結構同第一實施例中描述,在此不再贅述。Please refer to step S210 of FIG. 4 and FIG. 5 to provide a
請參閱圖4及圖5的步驟S220,附著一透明膜5於基板1的上表面。可以理解的是,所述透明膜5的材料及結構同第一實施例中描述,在此不再贅述。Please refer to step S220 of FIGS. 4 and 5 to attach a
請參閱圖4及圖5的步驟S230,一晶圓搬運系統依據位置參考點2,將一晶圓7的電極面9黏附於透明膜5的上表面。所述晶圓7是發光二極體晶圓,一般是於藍寶石晶圓(基板)表面經磊晶製程形成二極體的多層結構,並製作電極,經切割後可得複數個發光二極體晶片。所述晶圓7包括一具有電極的電極面9以及一與該電極面9相對的發光面8。所述電極面9向下黏附於所述透明膜5,可以防止封裝過程中螢光粉或膠附於電極表面。Referring to step S230 of FIGS. 4 and 5, a wafer handling system adheres the
所述晶圓搬運系統是以電腦控制,具有CCD圖像傳感模組及可吸取或可捉取發光二極體晶圓7的機械臂,藉由CCD圖像傳感模組辨識位置參考點2,並控制擺臂或滑桿形式的機械臂吸取或捉取晶圓7放至一目標位置。所述吸取晶圓7並擺放其至該目標位置的過程可自動化控制。所述晶圓搬運系統也可以是固晶機、貼片機、排片機或其他可自動辨識位置參考點2並完成晶圓7排列的機械。The wafer handling system is controlled by a computer, has a CCD image sensor module and a mechanical arm that can absorb or capture the light-emitting
請參閱圖4的步驟S240,於晶圓7的發光面8上形成一螢光層20,該螢光層20包括第一色溫螢光層21及一第二色溫螢光層22。可以理解的是,在所述螢光層20上可進一步形成一透明的保護層35。Referring to step S240 of FIG. 4, a
在一實施方法中,圖4 的步驟S240可進一步包括圖5的步驟S241至S247。In an implementation method, step S240 of FIG. 4 may further include steps S241 to S247 of FIG. 5.
請參閱圖5的步驟S241,形成所述螢光層20之前,於部份不需螢光層20覆蓋的發光面8上形成一光阻劑層6。所述光阻劑層6可被移除,進而移除覆蓋於所述光阻劑層6的螢光層20。Referring to step S241 of FIG. 5, before forming the
請參閱圖5 的步驟S242,於發光面8及光阻劑層6上形成所述第一色溫螢光層21,進一步可於所述第一色溫螢光層21上形成所述保護層35。Referring to step S242 of FIG. 5, the first color
請參閱圖5的步驟S243,將所述光阻劑層6及其上的第一色溫螢光層21及保護層35一併移除,保留部份第一色溫螢光層21。Referring to step S243 of FIG. 5, the
請參閱圖5的步驟S244,於部份發光面8、所述第一色溫螢光層21或保護層35上形成所述光阻劑層6。Referring to step S244 of FIG. 5, the
請參閱圖5的步驟S245,於發光面8及光阻劑層6上形成所述第二色溫螢光層22,進一步可於所述第二色溫螢光層22上形成所述保護層35。Referring to step S245 of FIG. 5, the second color
請參閱圖5的步驟S246,將所述光阻劑層6及其上的第二色溫螢光層22及保護層35一併移除,保留部份第二色溫螢光層22。Referring to step S246 of FIG. 5, the
請參閱圖5的步驟S247,於未被螢光層20所覆蓋的發光面8上形成所述保護層35。Referring to step S247 of FIG. 5, the
步驟S241及S244中,所述光阻劑層6是由光阻劑所形成,光阻劑包括正光阻劑及負光阻劑,其中正光阻劑所形成的光阻劑層經曝光後變成可溶,易於移除,負光阻劑則相反。所述正光阻劑的材料可以是酚醛(Novolac)樹脂,經曝光後可被醋酸型溶劑所溶解。利用一光罩僂空的部份進行曝光,可移除部份發光面8上的光阻劑層6,使所述螢光層20可直接形成於所述發光面8上。當要一併移除光阻劑層6及其上的螢光層20與保護層35時,可利用溶劑及雷射光進行加工。為避免雷射光加工時破壞晶圓7的電性層,可以兩種方法阻擋雷射光,其一為在光阻劑中加入阻光材料,其二為在所述光阻劑層6成型後蒸鍍一層阻光材料,所述阻光材料可以是碳黑或奈米金屬材料,所述兩種方法可單獨或合併實施。In steps S241 and S244, the
步驟S242及S245中,所述螢光層20包含複數個發光粉粒。所述發光粉粒能夠吸收所述發光二極體晶片發出的光而形成特定色溫的光。進一步的,所述發光二極體晶片發出的未被所述發光粉粒吸收的光能夠與所述發光粉粒所發出的光混合形成用戶所需色溫的光。所述第一色溫螢光層21及第二色溫螢光層22包含不同種類的發光粉粒,因此可產生不同色溫的光。In steps S242 and S245, the
在本實施例中,所述發光粉粒包括螢光粉。In this embodiment, the luminescent powder particles include phosphor powder.
所述螢光粉例如是硫化物螢光粉或非硫化物螢光粉。所述非硫化物螢光粉例如是,但不局限於,釔鋁石榴石螢光粉(Yttrium Aluminum Garnet,簡稱YAG)、鋱鋁石榴石螢光粉(Terbium Aluminum Garnet,簡稱TAG)、氮化物或矽酸鹽中的一種或它們之間的組合。The phosphor is, for example, a sulfide phosphor or a non-sulfide phosphor. The non-sulfide phosphor powder is, for example, but not limited to, Yttrium Aluminum Garnet (YAG), Terbium Aluminum Garnet (TAG), nitride or silicate One or a combination of them.
所述量子點是3個維度都在100 nm以下的奈米材料,具有量子限量化效應,可以激發出不同色溫的螢光。量子點吸收能量較高的光波後產生能階躍升,當電子從高能階的狀態降到低能階的狀態時,會發射出波長較長(偏紅光系)的光,其能量間隙隨尺寸增大而變小,因此由改變量子點尺寸可控制其發出的螢光色溫。量子點的種類包括金屬量子點及非金屬量子點,其中,金屬量子點材料可以是硒化鎘、硫化鎘或磷化銦,非金屬量子點材料可以是石墨烯、氧化石墨烯,所述非金屬量子點可進一步摻雜其他元素或以基團修飾達成改變性質的目的。The quantum dots are nanomaterials whose three dimensions are all below 100 nm, have quantum limiting effect, and can excite fluorescence with different color temperatures. Quantum dots absorb light waves with higher energy and produce energy step-ups. When electrons fall from a high-energy state to a low-energy state, they emit light with a longer wavelength (reddish light system), and the energy gap increases with size. Larger and smaller, so the color temperature of the fluorescent light emitted by the quantum dot can be controlled by changing its size. The types of quantum dots include metal quantum dots and non-metallic quantum dots, wherein the metal quantum dot material can be cadmium selenide, cadmium sulfide or indium phosphide, and the non-metallic quantum dot material can be graphene or graphene oxide. Metal quantum dots can be further doped with other elements or modified with groups to achieve the purpose of changing properties.
所述螢光層可以是含膠螢光層或不含膠螢光層。所述含膠螢光層的製備方法是將發光粉粒及黏合劑(膠)的均勻混合物塗佈至所述發光二極體晶片或晶圓表面。所述膠例如是環氧樹脂或矽膠類物質。塗佈時可以刀片印刷或滾輪印刷的方式進行。所述不含膠螢光層的製備方法是將含發光粉粒的液體施加於所述發光二極體晶片或晶圓表面,再移除所述液體,使所述發光粉粒凝結成塊。所述液體為不含膠的水或揮發性溶劑,所述揮發性溶劑選自醚類、醇類或酮類中的一種或它們之間的組合。所述含發光粉粒的液體相施加方式例如是,但不局限於,噴塗、浸漬等方式。可以理解的是,移除所述液體步驟主要通過抽取、流放或是在一定溫度下蒸發所述液體,所述發光粉粒之間能夠通過凡得瓦爾力緊密地結合在一起。另一種所述不含膠螢光層的製備方法是將發光粉粒製成非導體的靶材,以濺射成型方式於所述發光二極體晶片表面形成螢光層。The fluorescent layer may be a glue-containing fluorescent layer or a glue-free fluorescent layer. The preparation method of the glue-containing fluorescent layer is to apply a uniform mixture of luminescent powder particles and a binder (glue) to the surface of the light-emitting diode chip or wafer. The glue is, for example, an epoxy resin or a silicone-based substance. The coating can be performed by blade printing or roller printing. The preparation method of the glue-free fluorescent layer is to apply a liquid containing luminescent powder particles to the surface of the light-emitting diode wafer or wafer, and then remove the liquid to make the luminescent powder particles coagulate into a block. The liquid is glue-free water or a volatile solvent, and the volatile solvent is selected from one of ethers, alcohols or ketones or a combination thereof. The application method of the liquid phase containing luminescent powder particles is, for example, but not limited to, spraying, dipping, and the like. It can be understood that the step of removing the liquid is mainly through extraction, discharge or evaporation of the liquid at a certain temperature, and the luminescent powder particles can be tightly bound together by the Van der Waals force. Another method for preparing the glue-free fluorescent layer is to make the luminescent powder particles into a non-conducting target material and form a fluorescent layer on the surface of the light-emitting diode wafer by sputtering molding.
步驟S242、S245及S247中,所述保護層35用於使發光裝置10與外界隔絕,從而避免外界的影響與污染。為避免影響出光效率,所述保護層35為透明或吸光率低的材料,例如是樹脂、矽膠或是材質較軟的其他材料。所述樹脂可例如是硬化劑混合比例較低的環氧樹脂。優選的,所述硬化劑和所述環氧樹脂的品質混合比例為1:1或1:4。塗佈所述保護層時,可以刀片印刷或滾輪印刷方式。在本實施方式中,所述保護層35的製作方式可以是在所述螢光層20成型後,將所述保護層35材料塗佈於所述螢光層20,可以理解的是,所述保護層材料在固化之前可以滲入所述螢光層20的至少一部份,使所述保護層35固化後與所述螢光層20互相結合。In steps S242, S245, and S247, the
再次參閱圖4及圖5的步驟S250,翻轉將該晶圓9並黏附於透明膜5的上表面,該晶圓9的電極面9向上。所述晶圓7可以藉由熱或光照方式與透明膜5分離,上下翻轉以電極面9朝上且發光面8朝下方式,由晶圓搬運系統依據位置參考點將所述晶圓7黏附並固定於透明膜5。Referring again to step S250 of FIGS. 4 and 5, the
參閱圖4及圖5的步驟S260,切割該晶圓9,形成複數個發光裝置10及任二個該發光裝置10之間的間隙40。所述複數個發光裝置10可以包括不同色溫的第一色溫發光裝置15、第二色溫發光裝置16、第三色溫發光裝置17。所述切割可以使用鑽石刀或雷射切割機。可依據位置參考點2規劃切割參考線,據以切割。所述間隙40的大小可以由切割工具的寬度決定。Referring to step S260 of FIGS. 4 and 5, the
參閱圖4及圖5的步驟S270,於任二個該發光裝置10之間的於間隙40形成一阻光層30。所述阻光層30的製備方法是將阻光粉及黏合劑(膠)的均勻混合物塗佈至所述間隙40。塗佈時可以刀片或滾輪印刷的方式進行。所述阻光粉的材料可以是絕緣碳黑、絕緣金屬、反光或不反光的有機塑膠、以絕緣鍍膜或包覆手段製作的不透光的陶瓷粉或三氧化二鋁粉,阻光粉的顏色可以是黑色、白色、灰色或其他顏色。所述黏合劑可以是環氧樹脂、有機聚合物、矽膠材料。Referring to step S270 of FIGS. 4 and 5, a
步驟S270的另一實施方式中,所述阻光層30的製備方法是將阻光粉噴灑於位於間隙40的透明膜5上表面,藉由沾膠黏附阻光粉,形成一層不含膠的第一阻光層(未示出),再將阻光粉及黏合劑(膠)的均勻混合物塗佈至所述任二個發光裝置10之間的間隙40,形成一第二阻光層(未示出)。In another embodiment of step S270, the preparation method of the light-blocking
步驟S270的另一實施方式中,在形成所述阻光層30之前,可於所述發光裝置10的側面以濺射方式形成一層二氧化矽層。In another embodiment of step S270, before forming the light-blocking
參閱圖4及圖5的步驟S280,切割該阻光層30。形成阻光層30後,切割所述阻光層30形成複數個光源模組100。所述切割可以使用鑽石刀或雷射切割機。可依據位置參考點2規劃切割參考線,據以切割。Referring to step S280 of FIGS. 4 and 5, the
所述複數個光源模組100可以藉由熱或光照方式與透明膜5分離,並使用UV膜或熱解膜沾附光源模組100,轉移至擴張膜上供後續製程使用。The plurality of
可以理解的是,所述擴張膜是本領域擴晶製作常用的材料。所述擴張膜的材料例如是,但不局限於,紙質、布料、聚對苯二甲酸乙二醇酯(Polyethylene terephthalate,PET)、聚乙烯醇(polyvinyl alcohol,PVA)及尼龍(Polyamide,PA)、聚氯乙烯(Polyvinylchlorid,PVC)、聚乙烯、聚丙烯、聚苯乙烯或其他樹脂製成的薄膜。所述擴張膜還包括一黏膠層(圖中未示)。所述黏膠層例如是矽膠膜、壓克力膜或是UV膜。It can be understood that the expansion film is a material commonly used in the field of crystal expansion. The material of the expansion membrane is, for example, but not limited to, paper, cloth, polyethylene terephthalate (PET), polyvinyl alcohol (PVA) and nylon (Polyamide, PA) , Polyvinyl chloride (Polyvinylchlorid, PVC), polyethylene, polypropylene, polystyrene or other resins made of film. The expansion membrane also includes an adhesive layer (not shown). The adhesive layer is, for example, a silicone film, an acrylic film or a UV film.
本領域技術人員能夠理解的,所述UV膜是將特殊配方塗料塗布於PET薄膜、PVC薄膜、PO、聚乙烯-聚醋酸乙烯酯共聚物(Polyethylene vinylacetate,EVA)等薄膜基材表面。,當使用所述PO薄膜基材時,製得的UV薄膜穩定、黏著力高且經UV固化機照射後,可減黏至方便取所述發光發光裝置10。當使用所述PET薄膜基材時,製得的UV薄膜能夠於無塵室貼合使用、適合用於晶圓、玻璃、陶瓷板的切割,並且經UV光源照射後撕離不殘膠。A person skilled in the art can understand that the UV film is coated with a specially formulated coating on the surface of a film substrate such as PET film, PVC film, PO, polyethylene-polyvinyl acetate copolymer (EVA) and the like. When the PO film substrate is used, the prepared UV film is stable and has high adhesive force, and after being irradiated by the UV curing machine, the viscosity can be reduced to facilitate the light-emitting light-emitting
本領域技術人員能夠理解的,所述熱解膜是在PET薄膜基材表面上塗佈遇熱可剝離的臨時定位膠,其組成可以由丙烯酸2-甲基乙酯、乙基丙烯酸2-乙基丙脂、 矽氧丙烯剝離助劑、鈦白粉、硫酸鋇、環氧交聯劑、聚合反應引發劑以適當比例混合而成。所述熱解膜在加熱至合適溫度後,定位膠的黏性於一定時間內完全消失,可輕易分離。It can be understood by those skilled in the art that the pyrolysis film is coated on the surface of the PET film substrate with a temporary positioning adhesive that can be peeled off when heated, and its composition may be composed of 2-methyl ethyl acrylate and 2-ethyl ethyl acrylate Propylene glycol, silicon oxypropylene peeling aid, titanium dioxide, barium sulfate, epoxy crosslinking agent, polymerization initiator are mixed in an appropriate ratio. After the pyrolysis film is heated to a suitable temperature, the viscosity of the positioning glue completely disappears within a certain period of time and can be easily separated.
請參閱圖6,所述光源模組100包括複數個發光裝置10,該發光置10可以包括一種以上不同色溫的發光裝置15、16、17,每一個發光裝置10的側面被阻光層30覆蓋,防止複數個發光裝置10的側向光彼此干擾。Referring to FIG. 6, the
上述實施例為本發明較佳的實施例,但本發明的實施例並不受上述實施例的限制,以上實施例僅是用於解釋申請專利範圍。然本發明的保護範圍並不侷限於說明書。任何熟悉本技術領域的技術人員在本發明披露的技術範圍內,可輕易想到的變化或者替換,都包含在本發明的保護範圍之內。The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above embodiments. The above embodiments are only used to explain the scope of patent applications. However, the protection scope of the present invention is not limited to the description. Any changes or replacements that can be easily thought of by those skilled in the art within the technical scope disclosed in the present invention are included in the protection scope of the present invention.
1:基板1: substrate
2:位置參考點2: Position reference point
5:透明膜5: Transparent film
6:光阻劑層6: Photoresist layer
7:晶圓7: Wafer
10:發光裝置10: Light emitting device
8、11:發光面8, 11: luminous surface
9、12:電極面9, 12: electrode surface
15:第一色溫發光裝置15: The first color temperature light-emitting device
16:第二色溫發光裝置16: Second color temperature light-emitting device
17:第三色溫發光裝置17: Third color temperature light-emitting device
20:螢光層20: fluorescent layer
21:第一色溫螢光層21: The first color temperature fluorescent layer
22:第二色溫螢光層22: Second color temperature fluorescent layer
30:阻光層30: light blocking layer
35:保護層35: protective layer
40:間隙40: gap
100:光源模組100: light source module
圖1係本發明第一實施例的光源模組封裝製程的流程圖。FIG. 1 is a flowchart of a light source module packaging process according to a first embodiment of the present invention.
圖2係本發明第一實施例的光源模組封裝製程的示意圖。FIG. 2 is a schematic diagram of the light source module packaging process of the first embodiment of the present invention.
圖3A、3B係本發明的基板及位置參考點的示意圖。3A and 3B are schematic diagrams of the substrate and position reference points of the present invention.
圖4係本發明第二實施例的光源模組封裝製程的流程圖。4 is a flowchart of a light source module packaging process according to a second embodiment of the invention.
圖5係本發明第二實施例的光源模組封裝製程的示意圖。5 is a schematic diagram of a light source module packaging process according to a second embodiment of the invention.
圖6係本發明的光源模組的示意圖。6 is a schematic diagram of the light source module of the present invention.
無no
1:基板 1: substrate
2:位置參考點 2: Position reference point
5:透明膜 5: Transparent film
10:發光裝置 10: Light emitting device
11:發光面 11: Glowing surface
12:電極面 12: electrode surface
15:第一色溫發光裝置 15: The first color temperature light-emitting device
16:第二色溫發光裝置 16: Second color temperature light-emitting device
17:第三色溫發光裝置 17: Third color temperature light-emitting device
30:阻光層 30: light blocking layer
40:間隙 40: gap
100:光源模組 100: light source module
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