KR100462394B1 - White Light Emitting Diode and its method of making - Google Patents
White Light Emitting Diode and its method of making Download PDFInfo
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- KR100462394B1 KR100462394B1 KR10-2002-0052521A KR20020052521A KR100462394B1 KR 100462394 B1 KR100462394 B1 KR 100462394B1 KR 20020052521 A KR20020052521 A KR 20020052521A KR 100462394 B1 KR100462394 B1 KR 100462394B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 claims abstract description 29
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000006071 cream Substances 0.000 claims abstract description 10
- 229910000679 solder Inorganic materials 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 4
- 238000009966 trimming Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/73265—Layer and wire connectors
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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Abstract
본 발명은 백색 발광다이오드 및 그 제조방법에 관한 것으로, PCB기판에 430∼470㎚계의 발광다이오드 칩을 다이 본딩, 와이어 본딩을 하고 YAG계 형광체를 일정비율로 혼합한 에폭시수지로 트랜스퍼 몰드를 한 후, 쏘우잉 공정을 통하여 개별화 한 패키지를 다른 패키지의 PCB기판에 크림 솔더로 접착하고, 투광용 에폭시수지로 2차 트랜스퍼 몰드를 하고, 2차 쏘우잉 공정을 통하여 개별화함으로써 얻어지는 백색 발광다이오드 및 그 제조방법에 관한 관한 것이다.The present invention relates to a white light emitting diode and a method of manufacturing the same, wherein die-bonding and wire bonding of a 430 to 470 nm light emitting diode chip are carried out on a PCB substrate and a transfer mold is made of an epoxy resin in which YAG-based phosphors are mixed at a predetermined ratio. Then, the white light emitting diode obtained by attaching the individualized package through the sawing process to the PCB substrate of the other package with a cream solder, performing a secondary transfer mold with a translucent epoxy resin, and individualizing the secondary package through a secondary sawing process It relates to a manufacturing method.
Description
본 발명은 백색 발광다이오드 및 그 제조방법에 관한 것으로서, 더욱 상세하게는 일정 파장 변환 효율이 향상된 백색 발광다이오드 및 그 제조방법에 관한 것이다.The present invention relates to a white light emitting diode and a method of manufacturing the same, and more particularly, to a white light emitting diode and a method of manufacturing the improved constant wavelength conversion efficiency.
백색 발광다이오드 제조방법에 관한 종래기술은 도 1과 같이 InGaN, GaN계의 발광다이오드 칩(1)을 반사컵(17)부에 실장한 후, 이 반사컵(17)부에 광의 일부를 흡수하여 광의 파장과는 다른 파장을 가지는 포토루미네선스 형광체(3)를 포팅(Potting)하여 백색광을 얻는 방법이 최근에 가장 많이 개발되고 있는 백색 발광다이오드 제작 방법이다. 하지만, 포토루미네선스 형광체(3)를 포팅(Potting)하여 백색광을 얻는 방법은 그 공정이 매우 복잡하고, 형광체의 혼합비율이 일정하지 않으면 파장 불일치로 인하여 얼룩이 생기고 시인성도 그만큼 저하된다. 또, 포토루미네선스 형광체(3)를 포팅하여 백색광을 얻는 방법은 형광체의 두께와 혼합 비율에 따라 제조할 때마다 다른 파장의 제품이 생산됨으로 인하여 제조공정이 매우 어렵고, 또한 형광체의 손실 비용이 높아 백색 발광다이오드가 매우 고가이고, 휘도가 매우 낮아 백색광을 상용화하는 데는 어려움이 있다.In the related art of manufacturing a white light emitting diode, an InGaN and GaN based light emitting diode chip 1 is mounted on a reflective cup 17, and then a portion of light is absorbed by the reflective cup 17. A method of producing white light emitting diodes, which has been most recently developed, is a method of obtaining white light by potting the photoluminescent phosphor 3 having a wavelength different from that of light. However, the method of obtaining the white light by potting the photoluminescent phosphor 3 is very complicated, and if the mixing ratio of the phosphor is not constant, staining occurs due to wavelength mismatch, and the visibility is also reduced. In addition, the method of obtaining the white light by porting the photoluminescent phosphor 3 is very difficult because the products having different wavelengths are produced every time the phosphor is produced according to the thickness and mixing ratio of the phosphor, and the loss cost of the phosphor is high. As a result, the white light emitting diode is very expensive and the luminance is very low, making it difficult to commercialize the white light.
본 발명은 이러한 종래의 백색 발광다이오드 제조방법의 문제점을 해결하기 위한 것으로, 다층 패키지 구조로 백색 발광다이오드를 제작함으로서 동일 파장 분포와 동일 색좌표를 갖도록 하여 기존의 양산성 문제를 개선한 발광효율이 뛰어난 백색 발광다이오드 소자 및 그 제조방법을 제공하는 것을 목적으로 한다.The present invention is to solve the problems of the conventional method of manufacturing a white light emitting diode, and by producing a white light emitting diode in a multi-layer package structure to have the same wavelength distribution and the same color coordinates to improve the conventional mass production problem is excellent in luminous efficiency An object of the present invention is to provide a white light emitting diode device and a method of manufacturing the same.
본 발명의 다른 목적은 YAG계 형광체를 일정한 두께와 일정한 혼합비를 갖는 트랜스퍼 몰드용인 YAG 에폭시재를 적용함으로써 광휘도 및 색좌표, 색온도가 동일할 뿐 아니라, YAG계 형광체중 파장변환 형광체의 사용을 최소화하여 제조비용을 대폭 절감하는 백색 발광다이오드 및 그 제조방법을 제공하는 것이다.Another object of the present invention is to apply the YAG epoxy material for the transfer mold having a constant thickness and a constant mixing ratio of the YAG-based phosphor, not only the same brightness, color coordinates, color temperature, but also minimize the use of the wavelength conversion phosphor in the YAG-based phosphor It is to provide a white light emitting diode and a method for manufacturing the same, which greatly reduce manufacturing costs.
본 발명의 또 다른 목적은 백색 발광다이오드 및 발광다이오드의 제조 시 패키지 사이즈별로 다른 제품을 생산할 때에 전 공정의 신규투자가 이루어져야 하는데 본 발명의 실시로 반도체 제조 공정의 과다한 투자비를 최소화 할 수 있는 백색발광다이오드 및 그 제조방법을 제공하는 것이다.이러한 목적을 달성하기 위한 본 발명에 따른 백색 발광다이오드의 제조방법은 한 쌍의 PCB 패턴부가 다수개의 1조로서 다수열로 배열구성되며, 단일 PCB 패턴마다 접착제로 도팅(Dotting)하는 제1공정과, 접착제에 발광다이오드 칩(430㎚∼470㎚)을 PCB 패드 컵 부분에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어로 전극에 접합하는 제3공정과, 다수열로 배열되어 있는 PCB 패턴부를 몰드 금형에 안착시키고 YAG계 형광체와 에폭시수지를 혼합한 열경화성수지로 몰드하는 제4공정과, 몰드가 끝난 일련의 PCB 패턴부를 쏘우잉으로 단일화하는 제5공정에 있어서, 상기 단일화된 패키지를 인쇄된 다수열의 FR4 PCB 재질에 크림솔더로 다시 실장하고, 상기 다수열로 배열되어 있는 FR4 PCB를 몰드 금형에 안착시킨 후 투광형 에폭시수지로 렌즈형으로 몰드하여, 상기 몰드가 끝난 일련의 FR4 PCB 패턴부를 2차 쏘우잉으로 단일화하는 공정을 포함하여 이루어지는 특징이 있다.본 발명에 따른 백색 발광다이오드 제조방법의 다른 실시예는 한 쌍의 PCB 패턴부가 다수개의 1조로서 다수열로 배열구성되며, 단일 PCB 패턴마다 접착제로 도팅하는 제1공정과, 접착제에 발광다이오드 칩(430㎚∼470㎚)을 PCB 패드 컵 부분에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어로 전극에 접합하는 제3공정과, 다수열로 배열되어 있는 PCB 패턴부를 몰드 금형에 안착시키고 YAG계 형광체와 에폭시수지를 혼합한 에폭시수지로 몰드하는 제4공정과, 몰드가 끝난 일련의 PCB 패턴부를 쏘우잉으로 단일화하는 제5공정에 있어서, 상기 단일화된 패키지를 인쇄된 다수열의 사출 리드프레임에 크림솔더로 다시 실장하고, 상기 다수열로 배열되어 있는 사출 리드프레임을 투광형 에폭시수지로 포팅하여 고착하고, 상기 고착이 끝난 일련의 사출 리드프레임을 트리밍(Trimming)과 동시에 포밍(Formming)하여 단일화하는 공정으로 이루어지는 특징이 있다.Another object of the present invention is to produce a white light emitting diode and a light emitting diode to produce a different product for each package size, new investment of the entire process must be made, the implementation of the present invention white light emission that can minimize the excessive investment cost of the semiconductor manufacturing process A method of manufacturing a white light emitting diode according to the present invention for achieving the above object is a pair of PCB pattern portion is arranged in a plurality of rows in a plurality of pairs, adhesive for each single PCB pattern A first step of dotting, a second step of die bonding a light emitting diode chip (430 nm to 470 nm) to an PCB pad cup portion in an adhesive, and a second step of bonding the light emitting diode chip to an electrode with a gold wire. 3 step and thermosetting of YAG series phosphor and epoxy resin In the fourth step of molding with resin and the fifth step of unifying a series of molded PCB patterns by sawing, the unified package is remounted with cream solder on a plurality of printed FR4 PCB materials. The step of seating the FR4 PCB arranged in a mold mold and then molded into a lens-type with a translucent epoxy resin, characterized in that it comprises a step of unifying the series of FR4 PCB pattern portion of the mold is completed by secondary sawing. Another embodiment of the method for manufacturing a white light emitting diode according to the present invention comprises a pair of PCB pattern parts arranged in a plurality of rows as a plurality of pairs, the first step of doping with an adhesive for each single PCB pattern, and a light emitting diode on the adhesive A second step of die bonding chips (430 nm to 470 nm) to the PCB pad cup portion, a third step of bonding the light emitting diode chip to an electrode with gold wire, and a plurality of rows In the fourth step of seating the PCB pattern portion in the mold mold and molding with epoxy resin mixed with YAG-based phosphor and epoxy resin, and in the fifth step of unifying a series of PCB pattern portions by sawing, the unification The package was mounted on a plurality of rows of printed lead frames with a cream solder, and the plurality of rows of injection lead frames were cast with a transparent epoxy resin, and the trimmed series of injection lead frames was trimmed. (Trimming) and at the same time (forming) is characterized by consisting of a process of forming a single.
도 1는 종래의 백색 발광 다이오드 패키지를 나타낸 종단면도,1 is a longitudinal sectional view showing a conventional white light emitting diode package;
도 2a,2b와 2c,2d는 각각 본 발명의 제1실시예에 따른 백색 발광 다이오드의 각기 다른 구조를 도시한 평단면도 및 종단면도,2A, 2B, 2C, and 2D are planar cross-sectional views and longitudinal cross-sectional views respectively showing different structures of the white light emitting diode according to the first embodiment of the present invention;
도 3a는 본 발명에 따른 백색 발광 다이오드의 1차 공정도,3A is a first process diagram of a white light emitting diode according to the present invention;
도 3b,3c는 도3a의 공정을 거쳐 단일화된 패키지의 평단면도 및 종단면도,3B and 3C are plan cross-sectional and longitudinal cross-sectional views of a package unified through the process of FIG. 3A;
도 4는 본 발명의 일 실시예에 따른 백색 발광 다이오드의 2차 공정도,4 is a secondary process diagram of a white light emitting diode according to an embodiment of the present invention;
도 5는 본 발명의 의해 제조된 백색 발광 다이오드의 스펙트럼분포도.5 is a spectrum distribution diagram of a white light emitting diode manufactured by the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
1 : InGaN, GaN계 LED 칩(430nm~470nm)1: InGaN, GaN type LED chip (430nm ~ 470nm)
2 : 골드 와이어 3 : YAG계 형광체(파장변환 형광체와 에폭시수지 혼합물)2: gold wire 3: YAG-based phosphor (wavelength conversion phosphor and epoxy resin mixture)
4 : 에폭시 렌즈(구형, 타원) 5 : 금 도금층4: epoxy lens (spherical, ellipse) 5: gold plating layer
6 : PbSn 도금층 7 : FR4 PCB 패턴6: PbSn plating layer 7: FR4 PCB pattern
8 : PCB 패턴(BT-Resin) 9 : 크림 솔더8: PCB pattern (BT-Resin) 9: cream solder
10 : 다이 접착제 10A : 광투과형 다이 접착제10: die adhesive 10A: light transmitting die adhesive
11 : 투과형 에폭시수지 12 : 사출 리드프레임11: transmissive epoxy resin 12: injection lead frame
13 : 리드 프레임 14 : 관통홀15 : 음극리드 16 : 양극리드16A : 양극리드 17 : 반사컵부13 Lead Frame 14 Through Hole 15 Cathode Lead 16 Anode Lead 16A Anode Lead 17 Reflective Cup Section
이하 첨부된 도면을 참조로 본 발명에 따른 백색 발광다이오드 및 그 제조방법의 실시예들을 구체적으로 설명하기로 한다.도 2a, 2b는 각각 본 발명의 일 실시예에 따른 백색 광 반도체 소자의 평단면도 및 종단면도이다.Hereinafter, exemplary embodiments of a white light emitting diode and a method for manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. FIGS. 2A and 2B are cross-sectional views of a white optical semiconductor device according to an embodiment of the present invention, respectively. And a longitudinal sectional view.
도시된 바와 같이 본 발명에 따른 백색 광 반도체 소자의 구성은 접착제(10)에 다이 본딩된 발광다이오드 칩(1)(430nm~470nm)과, 이 칩(1)의 통전을 위한 통전 와이어(2)와 YAG계 형광체와 에폭시수지를 혼합한 에폭시수지(Epoxy)(3)로 몰드한 개별 패키지(P)와, 이 개별 패키지(P)를 FR4 PCB 패턴(7)에 실장하기 위한 크림 솔더(9)와, 이 개별 패키지(P) 위에 투광형 에폭시수지(11)로 몰드한 에폭시 렌즈(4)로 이루어진다.As shown, the configuration of the white optical semiconductor device according to the present invention includes a light emitting diode chip 1 (430 nm to 470 nm) die-bonded to the adhesive 10 and a conducting wire 2 for energizing the chip 1. And individual package (P) molded with epoxy resin (3) mixed with YAG-based phosphor and epoxy resin, and cream solder (9) for mounting the individual package (P) on FR4 PCB pattern (7). And the epoxy lens 4 molded into the translucent epoxy resin 11 on the individual package P.
도 2c, 2d는 본 발명의 또다른 실시예를 도시한 백색 광 반도체 소자의 평면도 및 단면도이다. 도시된 바와 같이 본 발명에 따른 백색 광 반도체 소자의 구성은 접착제(10)에 다이 본딩된 발광다이오드 칩(1)(430nm~470nm)과, 이 발광다이오드 칩(1)의 통전을 위한 통전 와이어(2)와, YAG계 형광체와 에폭시수지를 혼합한 에폭시수지(3)로 몰드한 개별 패키지(P)와, 이 개별 패키지(P)를 다른 사출 리드프레임(12)에 실장하기 위한 크림 솔더(9)와, 크림 솔더(9)로 실장한 사출 리드프레임 패드 컵 위에 포팅한 투광형 에폭시수지(11)로 이루어진다.2C and 2D are a plan view and a sectional view of a white optical semiconductor device showing yet another embodiment of the present invention. As shown, the configuration of the white optical semiconductor device according to the present invention includes a light emitting diode chip 1 (430 nm to 470 nm) die-bonded to the adhesive 10 and a conducting wire for energizing the light emitting diode chip 1 ( 2), an individual package P molded from an epoxy resin 3 mixed with a YAG-based phosphor and an epoxy resin, and a cream solder 9 for mounting the individual package P on another injection lead frame 12; ) And a translucent epoxy resin 11 potted on an injection leadframe pad cup mounted with a cream solder 9.
도 3a는 본 발명의 일 실시예에 따른 백색 광 반도체 소자의 제1공정을 도시한 것이고, 도 3b 및 도 3c는 상기 공정에서 만들어진 개별패키지(P)의 평단면도 및 종단면도로써, 한 쌍의 PCB 패턴부(8)가 다수개의 1조로서 다수열로 배열구성되며, 단일 PCB 패턴마다 도팅(Dotting)하는 접착제(10)와, PCB 패드 컵(17)부분에 도팅된 접착제(10)위에 접착되는 발광다이오드 칩(1)(430nm~470nm)과, 상기 발광다이오드 칩(1)을 전극 접합하는 골드 와이어(2)와, 다수열로 배열되어 있는 PCB 패턴부를 몰드 금형에 안착시키고 YAG계 형광체와 에폭시수지 혼합 에폭시수지(3)로 몰드(Mold)하고 일련의 PCB 패턴부(8)를 쏘우잉하여 단일화 한 패키지(P)로 이루어진다.도 4는 본 발명의 일 실시예에 따른 백색 광 반도체 소자의 제2공정에 관한 것으로서, 제1공정에서 개별화된 패키지(P)를 크림 솔더(9)를 사용하여 FR4 PCB 패턴(7)에 실장하고, FR4 PCB 패턴(7)위에 실장된 개별 패키지(P)위에 투광형 에폭시수지(11)를 몰드한다.(도 2a, 2b참조) 이로써 제1공정에서 일정 색 좌표를 갖는 개별화된 백색 발광다이오드 소자를 투광형 에폭시수지(11)로 구성된 렌즈를 갖춘 에폭시수지로 몰드함으로서 1차 공정을 통해 얻어진 균일한 색좌표와 휘도를 가진 개별화된 백색 발광다이오드를 분류 사용할 수 있는 장점과, 이후에 거쳐야 할 테스트 및 쏘우잉공정을 생략가능한 상태의 다양한 규격의 저가 패키지를 만들 수 있으므로 형광체의 사용을 최소화하면서 고휘도(렌즈를 갖추었기에 고휘도가 됨)의 백색 발광다이오드를 얻을 수 있다. 또한, 소형 저가로 제작된 개별화된 발광다이오드 소자를 대형 고가의 백색 발광다이오드 패키지(Package)소자에 실장함으로써 공정수율을 향상시킬 뿐 아니라 균일한 색 좌표와 휘도를 갖는 각종 규격의 제품을 별도의 고가 장비의 투자없이도 제품의 양산이 가능하게 된다.또한 제1차공정에서 개별화된 패키지(P)중 균일한 색좌표 및 휘도를 갖는 백색다이오드 만을 별도로 분류하고 크림솔더를 사용하여 다른 사출리드프레임에 실장하며 사출리드프레임의 패드컵 위에 실장된 개별 패키지(P)위에 투광형 에폭시수지를 포팅하고 트리밍 및 포밍함으로서 색의 불균형 현상을 방지할 수 있으며, 1차 쏘우잉시까지의 장비를 갖춘 후 각각 크기(예 1608, 3528, 2012, 5050 등)에 실장하는 장비는 제일 큰 장비 기준으로 하나만 갖추면 작업이 가능하므로 장비투자비용도 절감할 수 있다.도 5는 각각 본 발명의 일 실시예에 따른 백색 발광다이오드의 파장스펙트럼분포도이다. 이 파장 분포도는 기본의 제조방법에 따른 백색발광다이오드보다 우수한 것을 보여준다.3A illustrates a first process of a white optical semiconductor device according to an exemplary embodiment of the present invention, and FIGS. 3B and 3C are plan cross-sectional views and longitudinal cross-sectional views of individual packages P formed in the process. The PCB pattern portion 8 is arranged in a plurality of rows as a plurality of sets, and adhered onto the adhesive 10 doped to the PCB pad cup 17 and the adhesive 10 dotting for a single PCB pattern. A light emitting diode chip 1 (430 nm to 470 nm), a gold wire 2 for electrode bonding the light emitting diode chip 1, and a PCB pattern portion arranged in a plurality of rows to be seated on a mold die, Epoxy Resin Mixing Epoxy Resin (3) is molded (Mold) and a series of PCB pattern portion (8) by a single package (P) made of a single saw. FIG. 4 is a white optical semiconductor device according to an embodiment of the present invention For the second step of the process, the package (P) The hopper 9 is mounted on the FR4 PCB pattern 7, and the translucent epoxy resin 11 is molded on the individual package P mounted on the FR4 PCB pattern 7 (see FIGS. 2A and 2B). Thus, in the first step, the individualized white light emitting diode element having a predetermined color coordinate is molded into an epoxy resin having a lens composed of a transmissive epoxy resin 11, thereby individualizing white having uniform color coordinates and luminance obtained through the primary process. It is possible to make low-cost packages of various specifications that can use the classification of light emitting diodes and omit the subsequent testing and sawing process. Therefore, it is possible to minimize the use of phosphors and to achieve high brightness. A white light emitting diode can be obtained. In addition, by mounting individual small sized low cost individualized light emitting diode devices in a large expensive white light emitting diode package device, not only the process yield is improved, but also the products of various standards having uniform color coordinates and luminance are separately added. It is possible to mass-produce products without investing equipment. In addition, only white diodes with uniform color coordinates and brightness are separately classified among the packages (P), which are individualized in the first process, and mounted on different injection lead frames using cream solder. By discharging, trimming and forming the translucent epoxy resin on the individual package (P) mounted on the pad cup of the injection lead frame, color imbalance can be prevented. Ex. 1608, 3528, 2012, 5050, etc.) can be equipped with only one of the largest equipment standards. Also it can be reduced. Fig. 5 is a wavelength spectrum distribution of the white light emitting device according to each embodiment of the present invention. This wavelength distribution shows superiority to the white light emitting diode according to the basic manufacturing method.
이상에서 설명한 바와 같이 본 발명에 의한 백색 발광다이오드에서 구현한 백색광은 종래의 백색 발광다이오드 제작방법보다 저가로 생산할 수 있고, 고휘도의 제품을 얻을 수 있다. 또, 경년 변화가 없는 백색광을 얻을 수 있다. 본 발명의 실시예에 따르면 고가의 형광체를 일정 비율로 혼합한 에폭시수지의 사용을 최소화 할 수 있고 항상 동일한 두께로 형광 에폭시를 형성할 수 있으므로 제조비용이 저렴하고 일정 색 좌표 및 고휘도의 백색광을 얻을 수 있다. 또한, 사출 반사컵의 리드프레임과, 투광형 렌즈의 에폭시수지를 형광 에폭시 위에 형성시킴으로써 광의 집속도를 향상시킬 수 있다.As described above, the white light implemented in the white light emitting diode according to the present invention can be produced at a lower cost than the conventional white light emitting diode manufacturing method, and a high brightness product can be obtained. In addition, white light without age change can be obtained. According to an embodiment of the present invention, it is possible to minimize the use of an epoxy resin mixed with expensive phosphors at a constant ratio and to form a fluorescent epoxy with the same thickness at all times, thereby obtaining low manufacturing cost and obtaining white light having a constant color coordinate and high luminance. Can be. In addition, by forming the lead frame of the injection reflection cup and the epoxy resin of the transmissive lens on the fluorescent epoxy, the speed of light collection can be improved.
Claims (10)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0052521A KR100462394B1 (en) | 2002-09-02 | 2002-09-02 | White Light Emitting Diode and its method of making |
| CN 03820799 CN1679178A (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its method of making |
| JP2004532445A JP2005537655A (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and method for manufacturing white light emitting diode |
| PCT/KR2003/001780 WO2004021459A1 (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its methode of making |
| AU2003257724A AU2003257724A1 (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its methode of making |
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| Application Number | Priority Date | Filing Date | Title |
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| KR10-2002-0052521A KR100462394B1 (en) | 2002-09-02 | 2002-09-02 | White Light Emitting Diode and its method of making |
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| KR20040021079A KR20040021079A (en) | 2004-03-10 |
| KR100462394B1 true KR100462394B1 (en) | 2004-12-17 |
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| KR (1) | KR100462394B1 (en) |
| CN (1) | CN1679178A (en) |
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| KR100638868B1 (en) * | 2005-06-20 | 2006-10-27 | 삼성전기주식회사 | Led package with metal reflection layer and method of manufacturing the same |
| US7329907B2 (en) | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
| CN100414701C (en) * | 2006-06-08 | 2008-08-27 | 弘元科技有限公司 | Light-emitting system, light-emitting device, and forming method therefor |
| US7763478B2 (en) * | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
| JP5581060B2 (en) * | 2007-03-08 | 2014-08-27 | センセオニクス，インコーポレーテッド | Light-emitting diodes for harsh environments |
| WO2009091337A1 (en) * | 2008-01-18 | 2009-07-23 | Pne Micron Holdings Ltd | Process for organic coating |
| CN101619136B (en) * | 2008-06-30 | 2011-11-23 | 柏腾科技股份有限公司 | Organic film for converting spectra and LED chip packaging module |
| KR101509227B1 (en) * | 2008-07-21 | 2015-04-10 | 서울반도체 주식회사 | Method for manufacturing led package |
| US8679865B2 (en) * | 2009-08-28 | 2014-03-25 | Samsung Electronics Co., Ltd. | Resin application apparatus, optical property correction apparatus and method, and method for manufacturing LED package |
| KR101106106B1 (en) * | 2009-11-26 | 2012-01-18 | 정상열 | A boiler based on vacuum circulation |
| JP5375776B2 (en) | 2010-09-09 | 2013-12-25 | パナソニック株式会社 | LED package manufacturing system |
| KR20120067153A (en) | 2010-12-15 | 2012-06-25 | 삼성엘이디 주식회사 | Light emitting device, light emitting device package, manufacturing method of light emitting device, and packaging method of light emitting device |
| CN112718545B (en) * | 2020-11-11 | 2022-09-20 | 珠海格力智能装备有限公司 | Spout gluey machine visual detection device and full-automatic gluey assembly line that spouts |
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| JPS624380A (en) * | 1985-06-29 | 1987-01-10 | Toshiba Corp | Light emitting diode device |
| US20010042865A1 (en) * | 1997-01-15 | 2001-11-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
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| JP2912120B2 (en) * | 1993-05-14 | 1999-06-28 | 日本電気株式会社 | Nonvolatile semiconductor memory device and method of manufacturing the same |
| JP3329573B2 (en) * | 1994-04-18 | 2002-09-30 | 日亜化学工業株式会社 | LED display |
| JP2002043625A (en) * | 2000-07-19 | 2002-02-08 | Koha Co Ltd | Led |
| JP2002050798A (en) * | 2000-08-04 | 2002-02-15 | Stanley Electric Co Ltd | While led lamp |
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2002
- 2002-09-02 KR KR10-2002-0052521A patent/KR100462394B1/en not_active IP Right Cessation
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2003
- 2003-09-01 AU AU2003257724A patent/AU2003257724A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS624380A (en) * | 1985-06-29 | 1987-01-10 | Toshiba Corp | Light emitting diode device |
| US20010042865A1 (en) * | 1997-01-15 | 2001-11-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
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| JP2005537655A (en) | 2005-12-08 |
| CN1679178A (en) | 2005-10-05 |
| AU2003257724A1 (en) | 2004-03-19 |
| KR20040021079A (en) | 2004-03-10 |
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