KR20040021079A - White Light Emitting Diode and its method of making - Google Patents
White Light Emitting Diode and its method of making Download PDFInfo
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- KR20040021079A KR20040021079A KR1020020052521A KR20020052521A KR20040021079A KR 20040021079 A KR20040021079 A KR 20040021079A KR 1020020052521 A KR1020020052521 A KR 1020020052521A KR 20020052521 A KR20020052521 A KR 20020052521A KR 20040021079 A KR20040021079 A KR 20040021079A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000003822 epoxy resin Substances 0.000 claims abstract description 58
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 37
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000465 moulding Methods 0.000 claims abstract description 15
- 239000006071 cream Substances 0.000 claims abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000004593 Epoxy Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 238000004382 potting Methods 0.000 claims description 5
- 238000009966 trimming Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims 1
- 238000005304 joining Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 238000009958 sewing Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910020658 PbSn Inorganic materials 0.000 description 1
- 101150071746 Pbsn gene Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
Description
본 발명은 백색 발광다이오드 및 그 제조방법에 관한 것으로서, 더욱 상세하게는 일정 파장 변환 효율이 향상된 백색 발광다이오드 및 그 제조방법에 관한 것이다.The present invention relates to a white light emitting diode and a method of manufacturing the same, and more particularly, to a white light emitting diode and a method of manufacturing the improved constant wavelength conversion efficiency.
백색 발광다이오드 제조방법에 관한 종래기술은 도 1과 같이 InGaN, GaN계의 발광다이오드 칩(430nm~470nm, Blue LED)(1)을 반사컵(17)부에 실장한 후, 이 반사컵(17)부에 광의 일부를 흡수하여 광의 파장과는 다른 파장을 가지는 포토루미네선스 형광체(3)를 포팅(Potting)하여 백색광을 얻는 방법이 최근에 가장 많이 개발되고 있는 백색 발광다이오드 제작 방법이다. 하지만, 포토루미네선스 형광체(3)를 포팅(Potting)하여 백색광을 얻는 방법은 그 공정이 매우 복잡하고, 형광체의 혼합비율이 일정하지 않으면 파장 불일치로 인하여 얼룩이 생기고 시인성도 그만큼 저하된다. 또, 포토루미네선스 형광체(3)를 포팅하여 백색광을 얻는 방법은 형광체의 두께와 혼합 비율에 따라 제조할때마다 다른 파장의 제품이 생산됨으로 인하여 제조공정이 매우 어렵고, 또한 형광체의 손실 비용이 높아 백색 발광다이오드가 매우 고가이고, 휘도가 매우 낮아 백색광을 상용화하는 데는 어려움이 있다.In the related art of manufacturing a white light emitting diode, as shown in FIG. 1, an InGaN, GaN-based light emitting diode chip (430 nm to 470 nm, Blue LED) 1 is mounted on a reflecting cup 17, and then the reflecting cup 17 A method of manufacturing white light emitting diodes which has been most recently developed is a method of obtaining white light by absorbing a part of light to a photoluminescence phosphor 3 having a wavelength different from the wavelength of light. However, the method of obtaining the white light by potting the photoluminescent phosphor 3 is very complicated, and if the mixing ratio of the phosphor is not constant, staining occurs due to wavelength mismatch, and the visibility is also reduced. In addition, the method of obtaining the white light by porting the photoluminescent phosphor 3 is very difficult because the product of different wavelength is produced every time it is manufactured according to the thickness and mixing ratio of the phosphor, and the loss cost of the phosphor is high. As a result, the white light emitting diode is very expensive and the luminance is very low, making it difficult to commercialize the white light.
본 발명은 이러한 종래의 백색 발광다이오드 제조방법의 문제점을 해결하기 위한 것으로, 다층 패키지 구조로 백색 발광다이오드를 제작함으로서 동일 파장 분포와 동일 색좌표를 갖도록 하여 기존의 양산성 문제를 개선한 발광효율이 뛰어난 백색 발광다이오드 소자 및 그 제조방법을 제공하는 것을 목적으로 한다.The present invention is to solve the problems of the conventional method of manufacturing a white light emitting diode, and by producing a white light emitting diode in a multi-layer package structure to have the same wavelength distribution and the same color coordinates to improve the conventional mass production problem is excellent in luminous efficiency An object of the present invention is to provide a white light emitting diode device and a method of manufacturing the same.
본 발명의 다른 목적은 YAG계 형광체를 일정한 두께와 일정한 혼합비를 갖는 트랜스퍼 몰드용인 YAG 에폭시재를 적용함으로써 광휘도 및 색좌표, 색온도가 동일할 뿐 아니라, YAG계 형광체의 사용을 최소화하여 제조비용을 대폭 절감하는 백색 광 반도체 소자 및 그 제조방법을 제공하는 것이다.Another object of the present invention is to apply the YAG epoxy material for the transfer mold having a constant thickness and a constant mixing ratio of the YAG-based phosphor, not only the same brightness, color coordinates, and color temperature, but also greatly minimizes the use of the YAG-based phosphor, greatly reducing the manufacturing cost. It is to provide a white optical semiconductor device and a manufacturing method thereof.
본 발명의 또 다른 목적은 ZeSn계의 백색 발광다이오드 칩을 적용함으로써고가인 YAG계 형광체의 사용을 없애고, 저가의 확산형 에폭시 재질을 사용함으로써 ZeSn계 백색 발광다이오드 칩에서 나오는 블루, YAG 광자를 백색 광자로 변환, 혼합하여 주는 백색 발광다이오드 및 그 제조방법을 제공하는 것이다.Another object of the present invention is to eliminate the use of expensive YAG-based phosphor by applying a ZeSn-based white light emitting diode chip, and by using a low-cost diffusion type epoxy material, the blue, YAG photon emitted from the ZeSn-based white light emitting diode chip is white It is to provide a white light emitting diode and a method of manufacturing the same to convert and mix into a photon.
본 발명의 또 다른 목적은 비교적 저가의 585nm YAG 파장대의 발광다이오드의 칩을 리드프레임, PCB 패드 면에 실장후, 투광형 에폭시로 몰드하고 투광형 에폭시 위에 블루 파장의 발광다이오드 칩을 실장한 후 확산형 에폭시수지로 이중 몰드하는 구조로 고휘도의 백색 발광 다이오드 및 그 제조방법을 제공하는 것이다.It is still another object of the present invention to mount a chip of a light emitting diode having a relatively inexpensive 585 nm YAG wavelength on a lead frame and a PCB pad, mold it with a transparent epoxy, and mount a light emitting diode chip with a blue wavelength on the transparent epoxy and then diffuse it. It is to provide a high brightness white light emitting diode and a method of manufacturing the same in the structure of double-molding with a type epoxy resin.
이러한 목적을 달성하기 위한 본 발명에 따른 광 반도체 소자의 제조방법은 한 쌍의 PCB 패턴부가 다수개의 1조로서 다수열로 배열구성되며, 단일 PCB 패턴 마다 접착제로 도팅(Dotting)하는 제1공정과, 접착제에 발광다이오드 칩(430nm~ 470nm)을 PCB 패드 컵 부분에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어에 의해 전극 접합하는 제3공정과, 다수열로 배열되어 있는 PCB 패턴부를 몰드 금형에 안착시키고 YAG계 형광체와 에폭시수지를 혼합한 에폭시수지로 몰드하는 제4공정과, 몰드가 끝난 일련의 PCB 패턴부를 쏘우잉으로 단일화하는 제6공정과, 이 단일화된 패키지를 크림 솔더로 인쇄된 다수열의 FR4 PCB 재질에 실장하는 제7공정과, 다수열로 배열 되어 있는 FR4 PCB를 몰드 금형에 안착시키고, 투광형 에폭시수지로 몰드하는 제8공정과, 몰드가 끝난 일련의 FR4 PCB 패턴부를 2차 쏘우잉으로 단일화하는 제9공정을 포함하여 이루어지는 것을 특징으로 한다.The manufacturing method of the optical semiconductor device according to the present invention for achieving the above object is a pair of PCB pattern portion is arranged in a plurality of rows as a plurality of pairs, and the first step of dotting with an adhesive for each single PCB pattern and A second step of die bonding the light emitting diode chips (430 nm to 470 nm) to the PCB pad cup portion with an adhesive; a third step of electrode bonding the light emitting diode chips with gold wire; and a PCB pattern arranged in a plurality of rows. The fourth step of seating the part in a mold mold and molding with epoxy resin mixed with YAG-based phosphor and epoxy resin, the sixth step of unifying a series of PCB pattern parts by sawing, and cream soldering the unified package The seventh step of mounting the FR4 PCB material of a plurality of rows printed on the substrate, the eighth step of seating the FR4 PCB arranged in a plurality of rows to the mold mold, and the mold with a transparent epoxy resin, And a ninth step of unifying the finished series of FR4 PCB pattern parts by secondary sawing.
본 발명에 따른 백색 발광다이오드 제조방법의 다른 실시예는 한 쌍의 PCB패턴부가 다수개의 1조로서 다수열로 배열구성되며, 단일 PCB 패턴마다 접착제로 도팅하는 제1공정과, 접착제에 발광다이오드 칩(430nm~470nm)을 PCB 패드 컵 부분에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어에 의해 전극 접합하는 제3공정과, 다수열로 배열되어 있는 PCB 패턴부를 몰드 금형에 안착시키고 YAG계 형광체와 에폭시수지를 혼합한 에폭시수지로 몰드하는 제4공정과, 몰드가 끝난 일련의 PCB 패턴부를 쏘우잉으로 단일화하는 제6공정과, 이 단일화된 패키지를 크림 솔더로 인쇄된 다수열의 사출 리드프레임 재질에 실장하는 제7 공정과, 다수열로 배열되어 있는 사출 리드프레임을 투광형 에폭시수지로 포팅하여 고착하는 제8공정과, 고착이 끝난 일련의 사출 리드프레임을 트리밍(Trimming), 포밍 (Formming)하여 단일화하는 제9공정으로 이루어진다.Another embodiment of the method of manufacturing a white light emitting diode according to the present invention comprises a pair of PCB pattern parts arranged in a plurality of rows as a plurality of sets, the first step of doping with an adhesive for each single PCB pattern, and a light emitting diode chip on the adhesive A second process of die bonding (430 nm to 470 nm) to the PCB pad cup portion, a third process of electrode bonding the light emitting diode chip with a gold wire, and mounting a plurality of rows of PCB pattern parts to a mold mold A fourth step of molding from epoxy resin mixed with YAG-based phosphor and epoxy resin, a sixth step of unifying a series of molded PCB patterns by sawing, and a plurality of rows of injection molding of the single package with cream solder A seventh process of mounting the leadframe material, an eighth process of potting and fixing the injection leadframe arranged in a plurality of rows with a translucent epoxy resin, and a series of fixed yarns The output lead frame is trimmed and formed to form a ninth process of unification.
본 발명에 따른 광 반도체 소자의 제조방법의 다른 실시예는 블루 파장의 발광다이오드 칩(430nm~470nm)이 아닌 ZnSe계 백색 발광다이오드 칩을 단일 PCB 패턴마다 접착제로 도팅하는 제1공정과, 접착제에 ZnSe계 발광다이오드 칩을 PCB 패드 컵 부분에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어에 의해 전극 접합하는 제3공정과, 다수열로 배열되어 있는 PCB 패턴부를 몰드 금형에 안착시키고 확산형 에폭시수지로 몰드하는 제4공정과, 몰드가 끝난 일련의 PCB 패턴부(8)를 쏘우잉으로 단일화하는 제5공정으로 이루어진다.Another embodiment of the method for manufacturing an optical semiconductor device according to the present invention is a first step of doping a ZnSe-based white light emitting diode chip, not a blue wavelength light emitting diode chip (430nm ~ 470nm) with an adhesive for each single PCB pattern, A second process of die bonding a ZnSe-based light emitting diode chip to a PCB pad cup portion, a third process of electrode bonding the light emitting diode chip with a gold wire, and a PCB pattern portion arranged in a plurality of rows on a mold mold A fourth step of molding into a diffusion epoxy resin and a fifth step of unifying a series of the molded PCB pattern portion 8 by sawing.
본 발명에 따른 광 반도체 소자의 제조방법의 다른 실시예는 블루 파장의 발광다이오드 칩(430nm~470nm)이 아닌 ZnSe계 백색 발광다이오드 칩을 단일 PCB 패턴마다 접착제로 도팅하는 제1공정과, 접착제에 ZnSe계 발광다이오드 칩을 PCB 패드컵 부분에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어에 의해 전극 접합하는 제3공정과, 다수열로 배열되어 있는 PCB 패턴부에 확산형 에폭시수지로 도팅하는 제4공정과, 확산형 에폭시수지로 도팅된 PCB 패턴부를 몰드 금형에 안착시키고 투광형 에폭시수지로 몰드하는 제5공정과, 몰드가 끝난 일련의 PCB 패턴부를 쏘우잉으로 단일화하는 제6공정으로 이루어진다.Another embodiment of the method for manufacturing an optical semiconductor device according to the present invention is a first step of doping a ZnSe-based white light emitting diode chip, not a blue wavelength light emitting diode chip (430nm ~ 470nm) with an adhesive for each single PCB pattern, A second step of die bonding a ZnSe-based light emitting diode chip to a PCB pad cup portion, a third step of electrode bonding the light emitting diode chip to a gold wire electrode, and a diffusion epoxy resin in a PCB pattern portion arranged in a plurality of rows A fourth step of doping with a die, a fifth step of seating a PCB pattern portion doped with a diffusion type epoxy resin in a mold mold and molding with a translucent epoxy resin, and a sixth step of unifying a series of PCB patterns with a sawing The process takes place.
본 발명에 따른 광 반도체 소자의 제조방법의 다른 실시예는 블루 파장의 발광다이오드 칩(430nm~470nm)이 아닌 ZnSe계 백색 발광다이오드 칩을 단일 사출 리드프레임 반사판마다 접착제로 도팅하는 제1공정과, 접착제에 ZnSe계 발광다이오드 칩을 사출 리드프레임에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어에 의해 전극 접합하는 제3공정과, 다수열로 배열되어 있는 사출 리드프레임부에 확산형 에폭시수지로 도팅하는 제4공정과, 확산형 에폭시수지로 도팅된 다수열의 사출 리드프레임부에 투광형 에폭시수지로 포팅하는 제5공정과, 포팅이 끝난 일련의 사출 리드프레임부를 트리밍, 포밍으로 단일화하는 제6공정으로 이루어진다.Another embodiment of the method of manufacturing an optical semiconductor device according to the present invention is a first step of doping a ZnSe-based white light emitting diode chip, not a blue wavelength light emitting diode chip (430nm ~ 470nm) with an adhesive for each single injection lead frame reflector; A second step of die bonding a ZnSe-based light emitting diode chip to an injection lead frame with an adhesive; a third step of electrode bonding the light emitting diode chip with a gold wire; and a diffusion type in an injection lead frame part arranged in a plurality of rows. 4th process of doping with epoxy resin, 5th process of potting with translucent epoxy resin in multiple rows of injection leadframe parts doped with diffusion epoxy resin, and a series of potted injection leadframe parts unified by trimming and forming The sixth process is performed.
본 발명에 따른 광 반도체 소자의 제조방법의 다른 실시예는 GaAs,AlGaAsP계의 발광다이오드 칩(520nm~590nm)을 단일 PCB 패턴마다 접착제로 도팅하는 제1공정과, 접착제에 GaAs,AlGaAsP계의 발광다이오드 칩(520nm~590nm)을 PCB 패턴에 다이 본딩하는 제2공정과, 상기 발광다이오드 칩을 골드 와이어에 의해 전극 접합하는 제3공정과, 다수열로 배열되어 있는 PCB 패턴부에 투과형 에폭시수지로 몰드하는 제4공정과, InGaN, GaN계의 발광다이오드 칩(430nm~470nm)을 단일 PCB 패턴마다 접착제로 다이 본딩하고 골드 와이어로 전극을 형성시킨 후 투과형 에폭시수지로 몰드된 수지 위에 광투광형 다이 접착제를 도팅하는 제5공정과, 이 접착제에 InGaN, GaN계 발광다이오드 칩(430nm~470nm)을 투과형 에폭시수지로 몰드된 수지 위에 다이 본딩하는 제6공정과, 상기 InGaN, GaN계의 발광다이오드 칩(430nm~470nm)을 골드 와이어에 의해 전극 접합하는 제7공정과, 다수열로 배열되어 있는 PCB 패턴부에 확산형 에폭시수지로 몰드하는 제8공정과, 확산형 에폭시수지로 몰드된 다수열의 PCB 패턴부를 쏘우일으로 단일화하는 제9공정으로 이루어진다.Another embodiment of the manufacturing method of the optical semiconductor device according to the present invention is the first step of doping the GaAs, AlGaAsP-based light emitting diode chip (520nm ~ 590nm) with an adhesive for each single PCB pattern, and the GaAs, AlGaAsP-based light emission on the adhesive A second step of die bonding a diode chip (520 nm to 590 nm) to a PCB pattern, a third step of electrode bonding the light emitting diode chip to a gold wire, and a transmissive epoxy resin in the PCB pattern portion arranged in a plurality of rows. The fourth step of molding and die bonding of InGaN, GaN-based light emitting diode chips (430nm to 470nm) with an adhesive for each single PCB pattern, forming electrodes with gold wires, and then forming a light-transmissive die on a resin molded with a transmissive epoxy resin. A fifth step of doping the adhesive; a sixth step of die bonding the InGaN, GaN-based light emitting diode chip (430 nm to 470 nm) on the resin molded with a transmissive epoxy resin; and the InGaN, GaN-based light emitting diode A seventh step of electrode bonding the chips (430 nm to 470 nm) with a gold wire, an eighth step of molding a diffusion pattern epoxy resin into a PCB pattern portion arranged in a plurality of rows, and a plurality of rows molded from a diffusion type epoxy resin It consists of a ninth process of unifying a PCB pattern part with a saw oil.
도 1는 종래의 백색 발광 다이오드 패키지를 나타낸 종단면도,1 is a longitudinal sectional view showing a conventional white light emitting diode package;
도 2a,2b와 2c,2d는 각각 본 발명의 제1실시예에 따른 백색 발광 다이오드의 각기 다른 구조를 도시한 평단면도 및 종단면도,2A, 2B, 2C, and 2D are planar cross-sectional views and longitudinal cross-sectional views respectively showing different structures of the white light emitting diode according to the first embodiment of the present invention;
도 3a는 본 발명의 제1실시예에 따른 백색 발광 다이오드의 1차 공정도,3A is a first process diagram of a white light emitting diode according to a first embodiment of the present invention;
도 3b,3c는 도3a의 공정을 거쳐 단일화된 패키지의 평단면도 및 종단면도,3B and 3C are plan cross-sectional and longitudinal cross-sectional views of a package unified through the process of FIG. 3A;
도 4는 본 발명의 일 실시예에 따른 백색 발광 다이오드의 2차 공정도,4 is a secondary process diagram of a white light emitting diode according to an embodiment of the present invention;
도 5a 및 도 5b는 본 발명의 제2실시예에 의해 제조된 백색 발광 다이오드의 각기 다른 구조를 도시한 종단면도,5A and 5B are longitudinal cross-sectional views showing different structures of a white light emitting diode manufactured according to a second embodiment of the present invention;
도 6a,6b는 본 발명의 제3실시예에 따른 고휘도 백색 발광 다이오드의 평단면도 및 종단면도,6A and 6B are a plan sectional view and a longitudinal sectional view of a high brightness white light emitting diode according to a third embodiment of the present invention;
도 7은 본 발명의 제1,2,3실시예에 의한 백색 발광 다이오드의 색좌표 분포를 도시한 것이다.7 is a diagram illustrating color coordinate distribution of a white light emitting diode according to the first, second, and third embodiments of the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
1 : InGaN, GaN계 LED 칩(430nm~470nm) 1A : ZeSn 백색 LED 칩1: InGaN, GaN type LED chip (430nm ~ 470nm) 1A: ZeSn white LED chip
1B : GaAs,AlGaAs,AlGaAsP계 LED 칩(550nm~620nm)1B: GaAs, AlGaAs, AlGaAsP series LED chip (550nm ~ 620nm)
2 : 골드 와이어 3 : YAG계 형광체와 에폭시수지 혼합물2: gold wire 3: YAG-based phosphor and epoxy resin mixture
4 : 에폭시 렌즈(구형, 타원) 5 : 금 도금층4: epoxy lens (spherical, ellipse) 5: gold plating layer
6 : PbSn 도금층 7 : FR4 PCB 패턴6: PbSn plating layer 7: FR4 PCB pattern
8 : PCB 패턴(BT-Resin) 9 : 크림 솔더8: PCB pattern (BT-Resin) 9: cream solder
10 : 다이 접착제 10A : 광투과형 다이 접착제10: die adhesive 10A: light transmitting die adhesive
11 : 투과형 에폭시수지 11A : 확산형 에폭시수지11: transmissive epoxy resin 11A: diffused epoxy resin
12 : 사출 리드프레임 13 : 리드 프레임12: injection lead frame 13: lead frame
14 : 관통홀 15 : 음극리드14 through hole 15 cathode lead
16 : 양극리드 16A : 양극리드16: positive lead 16A: positive lead
17 : 반사컵부 18 : 블루 광자(430nm~490nm)17: reflecting cup portion 18: blue photon (430nm ~ 490nm)
19 : YAG 광자(585nm) 20 : 백색 광자19: YAG photon (585 nm) 20: white photon
이하 첨부된 도면을 참조로 본 발명에 따른 백색 광 반도체 소자 및 그 제조방법의 실시예들을 구체적으로 설명하기로 한다.Hereinafter, embodiments of a white optical semiconductor device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.
도 2a, 2b는 각각 본 발명의 일 실시예에 따른 백색 광 반도체 소자의 평단면도 및 종단면도이다.2A and 2B are a plan sectional view and a longitudinal sectional view of a white optical semiconductor device according to an embodiment of the present invention, respectively.
도시된 바와 같이 본 발명에 따른 백색 광 반도체 소자의 구성은 접착제(10)에 다이 본딩된 발광다이오드 칩(1)(430nm~470nm)과, 이 칩(1)의 통전을 위한 통전 와이어(2)와 YAG계 형광체와 에폭시수지를 혼합한 에폭시수지(Epoxy)(3)로 몰드한 개별 패키지(P)와, 이 개별 패키지(P)를 FR4 PCB 패턴(7)에 실장하기 위한 크림 솔더(9)와, 이 개별 패키지(P) 위에 투광형 에폭시수지(11)로 몰드한 에폭시 렌즈(4)로 이루어진다.As shown, the configuration of the white optical semiconductor device according to the present invention includes a light emitting diode chip 1 (430 nm to 470 nm) die-bonded to the adhesive 10 and a conducting wire 2 for energizing the chip 1. And individual package (P) molded with epoxy resin (3) mixed with YAG-based phosphor and epoxy resin, and cream solder (9) for mounting the individual package (P) on FR4 PCB pattern (7). And the epoxy lens 4 molded into the translucent epoxy resin 11 on the individual package P.
도 2c, 2d는 본 발명의 또다른 실시예를 도시한 백색 광 반도체 소자의 평면도 및 단면도이다. 도시된 바와 같이 본 발명에 따른 백색 광 반도체 소자의 구성은 접착제(10)에 다이 본딩된 발광다이오드 칩(1)(430nm~470nm)과, 이 발광다이오드 칩(1)의 통전을 위한 통전 와이어(2)와, YAG계 형광체와 에폭시수지를 혼합한 에폭시수지(3)로 몰드한 개별 패키지(P)와, 이 개별 패키지(P)를 다른 사출 리드프레임(12)에 실장하기 위한 크림 솔더(9)와, 크림 솔더(9)로 실장된 사출 리드프레임 패드 컵 위에 포팅한 투광형 에폭시수지(11)로 이루어진다.2C and 2D are a plan view and a sectional view of a white optical semiconductor device showing yet another embodiment of the present invention. As shown, the configuration of the white optical semiconductor device according to the present invention includes a light emitting diode chip 1 (430 nm to 470 nm) die-bonded to the adhesive 10 and a conducting wire for energizing the light emitting diode chip 1 ( 2), an individual package P molded from an epoxy resin 3 mixed with a YAG-based phosphor and an epoxy resin, and a cream solder 9 for mounting the individual package P on another injection lead frame 12; ) And a translucent epoxy resin 11 potted on an injection leadframe pad cup mounted with a cream solder 9.
도 3a는 본 발명의 일 실시예에 따른 백색 광 반도체 소자의 제1공정을 도시한 것이고, 도 3b 및 도 3c는 상기 공정에서 만들어진 개별패키지(P)의 평단면도 및 종단면도로써, 한 쌍의 PCB 패턴부(8)가 다수개의 1조로서 다수열로 배열구성되며, 단일 PCB 패턴마다 도팅(Dotting)하는 접착제(10)와, PCB 패드 컵(17)부분에 도팅된 접착제(10)위에 접착되는 발광다이오드 칩(1)(430nm~470nm)과, 상기 발광다이오드 칩(1)을 전극 접합하는 골드 와이어(2)와, 다수열로 배열되어 있는 PCB 패턴부를 몰드 금형에 안착시키고 YAG계 형광체와 에폭시수지 혼합 에폭시수지(3)로 몰드(Mold)하고 일련의 PCB 패턴부(8)를 쏘우잉하여 단일화 된 패키지(P)로 이루어진다.3A illustrates a first process of a white optical semiconductor device according to an exemplary embodiment of the present invention, and FIGS. 3B and 3C are plan cross-sectional views and longitudinal cross-sectional views of individual packages P formed in the process. The PCB pattern portion 8 is arranged in a plurality of rows as a plurality of sets, and adhered onto the adhesive 10 doped to the PCB pad cup 17 and the adhesive 10 dotting for a single PCB pattern. A light emitting diode chip 1 (430 nm to 470 nm), a gold wire 2 for electrode bonding the light emitting diode chip 1, and a PCB pattern portion arranged in a plurality of rows to be seated on a mold die, Epoxy Resin Mixture Molded with epoxy resin (3) and made of a single package (P) by sawing a series of PCB pattern portion (8).
도 4는 본 발명의 일 실시예에 따른 백색 광 반도체 소자의 제2공정에 관한 것으로서, 제1공정에서 개별화된 패키지(P)를 크림 솔더(9)를 사용하여 FR4 PCB 패턴(7)에 실장하고, FR4 PCB 패턴(7)위에 실장된 개별 패키지(P)위에 투광형 에폭시수지(11)를 몰드한다.(도 2a, 2b참조) 이로써 제1공정에서 일정색좌표를 갖는 개별화된 백색 발광다이오드 소자를 투광형 에폭시수지(11)로 구성된 렌즈를 갖춘 에폭시수지로 몰드함으로써 YAG 형광체의 사용을 최소화하면서 고휘도의 백색 발광다이오드를 얻을 수 있다. 또한, 저가로 제작된 개별화된 발광다이오드 소자를 곡의 백색 발광다이오드소자에 실장함으로써 공정수율을 향상시킬 뿐 아니라 일정한 색좌표를 갖는 제품의 양산이 가능하게 된다.4 is a view illustrating a second process of a white optical semiconductor device according to an exemplary embodiment of the present invention, in which the package P, which is individualized in the first process, is mounted on the FR4 PCB pattern 7 using the cream solder 9. Then, the translucent epoxy resin 11 is molded on the individual package P mounted on the FR4 PCB pattern 7 (see FIGS. 2A and 2B). The individualized white light emitting diode device having a predetermined color coordinate in the first step is thus formed. It is possible to obtain a high brightness white light emitting diode while minimizing the use of the YAG phosphor by molding the epoxy resin having a lens composed of a transmissive epoxy resin (11). In addition, by mounting a low-cost individualized light emitting diode device on a curved white light emitting diode device, not only improves the process yield but also mass production of a product having a constant color coordinate.
도 5a, 5b는 각각 본 발명의 다른 실시예에 따른 백색 발광다이오드의 종단면도로써, 다수열로 배열되어 있는 사출 리드프레임(12)또는 다수열로 배열되어 있는 PCB 패턴(8)위에 다이 접착제(10)에 의해 다이 본딩되는 ZnSe계 백색 발광다이오드 칩(1A)과, 전극 접합하는 골드 와이어(2)와, ZnSe계 백색 발광다이오드 침(1A)에서 발광하는 블루 광자(18)과 YAG 광자(19)를 혼합해주는 광확산형 에폭시수지(11A)와, 이 광확산형 에폭시수지(11A) 위에 포팅 또는 트랜스퍼 몰드하는 투광형 에폭시수지(11)로 이루어진다. 이 ZnSe계 백색 발광다이오드 칩(1A)은 상층부에서는 블루 파장의 광자를 방출하고 하층부에서는 YAG 파장의 광자를 방출하는 구조로서 블루 파장과 YAG 파장의 광자를 백색광(20)으로 혼합이 잘 되도록 광확산형 에폭시수지(11A)로 이 ZnSe 백색 발광다이오드 칩(1A)표면에 일정부분을 포팅하여 줌으로써 일정 부분의 색좌표를 갖춘 백색 발광다이오드를 구현할 수 있게 된다.5A and 5B are vertical cross-sectional views of a white light emitting diode according to another embodiment of the present invention, respectively. The die adhesive (or die) may be formed on the injection leadframe 12 arranged in a plurality of rows or the PCB pattern 8 arranged in a plurality of rows. 10) a ZnSe-based white light emitting diode chip 1A die-bonded by 10), a gold wire 2 for electrode bonding, and a blue photon 18 and a YAG photon that emits light from a ZnSe-based white light emitting diode needle 1A. ) And a translucent epoxy resin (11A) which is potted or transfer-molded on the light-diffusion epoxy resin (11A). The ZnSe-based white light emitting diode chip 1A emits photons of blue wavelengths in the upper layer and emits photons of YAG wavelength in the lower layer, and diffuses light so that photons of blue and YAG wavelengths are well mixed with the white light 20. It is possible to realize a white light emitting diode having a certain portion of color coordinates by porting a predetermined portion on the surface of the ZnSe white light emitting diode chip 1A with a type epoxy resin 11A.
도 6a, 6b는 본 발명의 또 다른 실시예에 따른 고휘도 백색 발광 다이오드의평단면도 및 종단면도로, PCB 패드 컵(17)에 YAG 파장의 발광다이오드(1B)와, 이 발광다이오드(1B)를 전극 접합하는 골드 와이어(2)와, 이 발광다이오드(1B)를 몰드한 투광형 에폭시수지(11)와, 이 투광형 에폭시수지(11) 위에 접착제(10A)로 다이 본딩한 블루 파장의 발광다이오드(1)와, 이 블루 파장의 발광다이오드(1)를 전극 접합하는 골드 와이어(2)와, 블루 파장의 발광다이오드(1) 위에 몰드하는 광확산형 에폭시수지(11A)로 이루어져 있다. 이는 각기 다른 빛을 방출하는 칩을 수직으로 구성함으로써 백색광으로의 혼합을 일정하게 유지할 수 있는 발광다이오드의 구조이다.6A and 6B are a plan sectional view and a longitudinal sectional view of a high brightness white light emitting diode according to another embodiment of the present invention. The gold wire 2 to be bonded, the transmissive epoxy resin 11 in which the light emitting diode 1B was molded, and the light emitting diode of blue wavelength die-bonded on the translucent epoxy resin 11 with an adhesive 10A ( 1), a gold wire 2 for electrode bonding the blue light emitting diode 1, and a light-diffusion epoxy resin 11A molded over the blue light emitting diode 1; This is a structure of a light emitting diode capable of maintaining a constant mixing of white light by vertically configuring chips emitting different light.
도 7은 상기 제1, 제2, 제3실시예에서 얻어지는 백색 발광 다이오드의 색좌표 분포를 도시한 것이다.FIG. 7 shows the color coordinate distribution of the white light emitting diodes obtained in the first, second and third embodiments.
이상에서 설명한 바와 같이 본 발명에 의한 백색 발광다이오드에서 구현한 백색광은 종래의 백색 발광다이오드 제작방법보다 저가로 생산할 수 있고, 고휘도의 제품을 얻을 수 있다. 또, 경년 변화가 없는 백색광을 얻을 수 있다. 본 발명의 제1실시예에 따르면 고가의 형광체를 일정 비율로 혼합한 에폭시수지의 사용을 최소화 할 수 있고 항상 동일한 두께로 형광 에폭시를 형성할 수 있으므로 제조비용이 저렴하고 일정 색좌표 및 고휘도의 백색광을 얻을 수 있다. 또한, 사출 반사컵의 리드프레임과, 투광형 렌즈의 에폭시수지를 형광 에폭시 위에 형성시킴으로써광의 집속도를 향상시킬 수 있다. 본 발명의 제2실시예에 따르면 현재의 백색광 생산 방식에 의한 제조방법은 VF가 높아서 발생하는 문제와 항상 동일한 색좌표를 얻기가 어렵다는 점을 해결할 수 있는 효과가 있다. ZnSe계 발광다이오드 칩에서 발광하는 블루 파장(490nm)과 YAG 파장(585nm)을 확산형 에폭시수지로 백색광으로 혼합함으로써 동일 색좌표를 얻을 수 있고, ZnSe계 발광다이오드 칩 자체의 VF 전압이 2.6V대로 기존의 백색 발광다이오드의 3.5V보다 훨씬 낯아 VF가 높아서 발생하는 소비 전력 문제를 해결할 수 있다. 또한, 시간 변화에 따른 백생광의 경년 변화를 근본적으로 해결할 수 있다. 본 발명의 제3실시예에 따르면 YAG 파장의 발광다이오드 칩(1B)과 블루 파장의 발광다이오드 칩(1)을 2층 구조로 제작하고, 각각의 칩에서 발광되는 광의 합이 백색광의 발광휘도가 됨으로써 기존의 백색 발광다이오드보다 5~10배 이상의 고휘도를 실현할 수 있다.As described above, the white light implemented in the white light emitting diode according to the present invention can be produced at a lower cost than the conventional white light emitting diode manufacturing method, and a high brightness product can be obtained. In addition, white light without age change can be obtained. According to the first embodiment of the present invention, it is possible to minimize the use of an epoxy resin mixed with expensive phosphors at a constant ratio and to form a fluorescent epoxy with the same thickness at all times, thereby lowering the manufacturing cost and providing white light having a constant color coordinate and high luminance. You can get it. In addition, by forming the lead frame of the injection reflection cup and the epoxy resin of the transmissive lens on the fluorescent epoxy, the light collecting speed can be improved. According to the second embodiment of the present invention, the manufacturing method according to the current white light production method has an effect that it is difficult to always obtain the same color coordinates as the problem caused by the high VF. The same color coordinates can be obtained by mixing the blue wavelength (490nm) and YAG wavelength (585nm) emitted from the ZnSe-based LED chip into white light with a diffusion type epoxy resin, and the VF voltage of the ZnSe-based LED chip itself is 2.6V. The white light emitting diode of MV is much less than 3.5V, which can solve the power consumption problem caused by high VF. In addition, it is possible to fundamentally solve the secular variation of white light with time. According to the third embodiment of the present invention, a light emitting diode chip 1B having a wavelength of YAG and a light emitting diode chip 1 having a wavelength of blue are manufactured in a two-layer structure, and the sum of the light emitted from each chip is the luminance of white light. As a result, 5 to 10 times higher luminance than the existing white light emitting diode can be realized.
Claims (10)
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| KR10-2002-0052521A KR100462394B1 (en) | 2002-09-02 | 2002-09-02 | White Light Emitting Diode and its method of making |
| AU2003257724A AU2003257724A1 (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its methode of making |
| CN 03820799 CN1679178A (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its method of making |
| JP2004532445A JP2005537655A (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and method for manufacturing white light emitting diode |
| PCT/KR2003/001780 WO2004021459A1 (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its methode of making |
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| KR101106106B1 (en) * | 2009-11-26 | 2012-01-18 | 정상열 | A boiler based on vacuum circulation |
| KR101509227B1 (en) * | 2008-07-21 | 2015-04-10 | 서울반도체 주식회사 | Method for manufacturing led package |
| US9893247B2 (en) | 2010-12-15 | 2018-02-13 | Samsung Electronics Co., Ltd. | Light-emitting device including phosphorus layer covering side surfaces of substrate and light-emitting device package including the same |
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| KR100638868B1 (en) | 2005-06-20 | 2006-10-27 | 삼성전기주식회사 | Led package with metal reflection layer and method of manufacturing the same |
| US7329907B2 (en) | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
| CN100414701C (en) * | 2006-06-08 | 2008-08-27 | 弘元科技有限公司 | Light-emitting system, light-emitting device, and forming method therefor |
| US7763478B2 (en) | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
| EP2135302A2 (en) * | 2007-03-08 | 2009-12-23 | Sensors For Medicine And Science, Inc. | Light emitting diode for harsh environments |
| WO2009091337A1 (en) * | 2008-01-18 | 2009-07-23 | Pne Micron Holdings Ltd | Process for organic coating |
| CN101619136B (en) * | 2008-06-30 | 2011-11-23 | 柏腾科技股份有限公司 | Organic film for converting spectra and LED chip packaging module |
| US8679865B2 (en) * | 2009-08-28 | 2014-03-25 | Samsung Electronics Co., Ltd. | Resin application apparatus, optical property correction apparatus and method, and method for manufacturing LED package |
| JP5375776B2 (en) * | 2010-09-09 | 2013-12-25 | パナソニック株式会社 | LED package manufacturing system |
| CN112718545B (en) * | 2020-11-11 | 2022-09-20 | 珠海格力智能装备有限公司 | Spout gluey machine visual detection device and full-automatic gluey assembly line that spouts |
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| JPS624380A (en) * | 1985-06-29 | 1987-01-10 | Toshiba Corp | Light emitting diode device |
| JP2912120B2 (en) * | 1993-05-14 | 1999-06-28 | 日本電気株式会社 | Nonvolatile semiconductor memory device and method of manufacturing the same |
| JP3329573B2 (en) * | 1994-04-18 | 2002-09-30 | 日亜化学工業株式会社 | LED display |
| US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
| JP2002043625A (en) * | 2000-07-19 | 2002-02-08 | Koha Co Ltd | Led |
| JP2002050798A (en) * | 2000-08-04 | 2002-02-15 | Stanley Electric Co Ltd | While led lamp |
-
2002
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| KR101509227B1 (en) * | 2008-07-21 | 2015-04-10 | 서울반도체 주식회사 | Method for manufacturing led package |
| KR101106106B1 (en) * | 2009-11-26 | 2012-01-18 | 정상열 | A boiler based on vacuum circulation |
| US9893247B2 (en) | 2010-12-15 | 2018-02-13 | Samsung Electronics Co., Ltd. | Light-emitting device including phosphorus layer covering side surfaces of substrate and light-emitting device package including the same |
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| WO2004021459A1 (en) | 2004-03-11 |
| CN1679178A (en) | 2005-10-05 |
| KR100462394B1 (en) | 2004-12-17 |
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| AU2003257724A1 (en) | 2004-03-19 |
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