WO2004021459A1 - White light emitting diode and its methode of making - Google Patents
White light emitting diode and its methode of making Download PDFInfo
- Publication number
- WO2004021459A1 WO2004021459A1 PCT/KR2003/001780 KR0301780W WO2004021459A1 WO 2004021459 A1 WO2004021459 A1 WO 2004021459A1 KR 0301780 W KR0301780 W KR 0301780W WO 2004021459 A1 WO2004021459 A1 WO 2004021459A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- emitting diode
- light emitting
- epoxy
- diode chip
- white light
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 102
- 239000004593 Epoxy Substances 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000006071 cream Substances 0.000 claims abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 238000000465 moulding Methods 0.000 claims description 35
- 239000003292 glue Substances 0.000 claims description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 238000004382 potting Methods 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000009966 trimming Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 15
- 238000009826 distribution Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Definitions
- the present invention relates generally White Light Emitting Diode and its method of making, in detail it's about that White Light Emitting Diode which improves regular wavelength-conversion efficiency.
- the present invention is a solution of usual white emitting diode method of making, as producing multi-package structure white light emitting diode it is a purpose to offer a white light emitting display and its method of making having capable emitting effect because same spectrum distribution and same color coordinates improve existing mass-production problem.
- the other purpose of the present invention offer a white light optical semiconductor device and its method of making that brightness and color coordinates, color temperature are same cause the application of YAG epoxy for transfer mold, YAG-line fluorescent material with regular thickness and regular mix rate as well as producing price reduce cause the minimum use of YAG-line fluorescent material.
- Another of purpose of the present invention offer a white light emitting diode and its method of making that high price YAG-line fluorescent material remove cause the application of ZnSe-line white emitting diode chip then Blue,
- YAG photon coming ZnSe-line white emitting diode chip transfers a white photon and mixes cause the use of low price diffusion epoxy quality.
- Another of purpose of the present invention offer a high-brightness white light emitting diode and its method of making that after low price 585nm YAG wavelength emitting diode chip has within lead frame and PCB pad side, molds on transmitted light epoxy, blue wavelength emitting diode chip has within upon transmitted light epoxy, the structure has double molds with diffusion epoxy.
- the making method of optical semiconductor device as the present invention achieve such this purpose organizes multi-line that a pair PCB pattern is the one group of multitude, it has a character that the first process which doting by a glue every unit PCB pattern, the second process which die bonding light emitting diode chip(430nm ⁇ 470mn) to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern which arranged in multifarious row be reaching safe in mold press and molding epoxy mixed YAG-line fluorescent material and epoxy, the sixth process which a mold ended series of PCB ' pattern unifying by sawing, the seventh process which united package has within multiline FR4 PCB quality copied by cream solder, the eighth process which FR4 PCB arranged multiline reaches safe mold press and molds on transmitted light epoxy, the ninth process which a series of ended mold PCB pattern be unifying by second sawing.
- the other practice of white emitting diode method according to the present invention is a pair PCB pattern is the one group of multitude, it has the following that the first process which doting by a glue every unit PCB pattern, the second process which die bonding light emitting diode chip(430nm ⁇ 470mn) to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern which arranged in multifarious row be reaching safe in mold press and molding epoxy mixed YAG-line fluorescent material and epoxy, the sixth process which a mold ended series of PCB pattern unifying by sawing, the seventh process which united package has within multiline molding lead frame quality copied by cream solder, the eighth process which molding lead frame arranged multiline be potting and sticking transmitted light epoxy, the ninth process which a series of ended stick molding lead frame be unifying by trimming and forming.
- optical semiconductor device method is the following that the first process which not light emitting diode chip(l)(430nm ⁇ 470nm) of blue wavelength but ZnSe line white light emitting diode be doting with use by a glue every unit PCB pattern, and the second process which ZnSE line light emitting diode chip be (die) bonding to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern arranged multiline be reaching safe in mold press and molding diffusion epoxy, the fifth process which a series of ended mold PCB pattern be unifying by sawing.
- optical semiconductor device method is the following that the first process which not light emitting diode chip(430nm ⁇ 470nm) of blue wavelength but ZnSe line white light emitting diode be doting with use by a glue every unit PCB pattern, and the second process which ZnSE line light emitting diode chip be die bonding to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern arranged multiline be dotting diffusive epoxy, the fifth process which this PCB pattern be reaching safe in mold press and molding transmitted light epoxy, the sixth process which a series of ended mold PCB pattern be unifying by sawing.
- optical semiconductor device method is the following that the first process which not light emitting diode chip(430nm ⁇ 470nm) of blue wavelength but ZnSe line white light emitting diode be doting with use by a glue every unit molding lead frame reflection plate, the second process which ZnSE line light emitting diode chip be die bonding to molding lead frame in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which a molding lead frame arranged multiline be dotting diffusive epoxy, the fifth process which multiline molding lead frame with doing diffusive epoxy be potting transmitted light epoxy, the sixth process which a series of ended potting molding lead frame be unifying by trimming and forming.
- optical semiconductor device method is the following that the first process which GaAs, AlGaAsP-line light emitting diode chip(520nm ⁇ 590nm) be doting with use by a glue every unit PCB pattern, the second process which GaAs, AlGaAsP-line light emitting diode chip(520nm ⁇ 590nm) be die bonding to PCB pattern in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern arranged multiline be molding transmitted light epoxy, the fifth process which InGaN, Ga -line light emitting diode chip(430nm ⁇ 470nm) be die bonding with glue and forming an electrode by gold wire then light-transmitted light die glue be doting upon molded resin with transmitted light epoxy, the sixth process which InGaN, GaN-line light emitting diode chip(430nm ⁇ 470nm) be die bonding upon molded resin with transmitted light epoxy
- Figs. 1 is a view showing the division-cross section of usual white light emitting diode package
- Figs. 2a, 2b and 2c, 2d are views showing a plain-cross section as well as a division-cross section that white light emitting diode has been illustrated individual structure according as the first practice ofthe present invention
- Figs. 3 is a view showing the first process of white light emitting diode according as the first practice ofthe present invention
- Figs. 3b,3c are views showing a plain-cross section as well as a division- cross section of unified package thought Figs.3 practice,
- Figs. 4 is a view showing the second process of white light emitting diode according to the first practice ofthe present invention
- Figs. 5a and 5b are views showing a division-cross section that white light emitting diode has been illustrated individual structure of the second practice of the present invention made
- Figs. 6a, 6b ' are views showing a plain-cross section as well as a division- cross section that high-brightness white light emitting diode according as the third practice of the present invention
- Figs. 7 is a view showing color coordinate distribution-illustration of white light emitting diode according as the first, second and third practice ofthe present. Best Mode for Carrying Out the Invention
- Figs. 2a, 2b are views showing a plain-cross section and a division-cross section of white optical semiconductor device according as the present invention practice.
- Figs. 2a, 2b are views showing a plain-cross section and a division-cross section of white optical semiconductor device according as the present invention other practice.
- Figs. 3a is a view showing the first process illustration of white optical semiconductor device according as the present invention practice, Figs.
- 3a and degree 3 c are views showing a plain-cross section and a division-cross section of each package(P) made above process, a pair PCB pattern(8) arranges multiline as the one group of multitude, glue(l ⁇ ) dotting every unit PCB pattern and light emitting diode chip(l)(430nm ⁇ 470nm) stick to glue dotted in PCB pad cup(17), gold wire(2) getting to an electrode junction the above light emitting diode chip(l), PCB pattern arranged multiline reaches safe in mold press and epoxy(3) mixed YAG-line fluorescent material and epoxy molds and then a series of PCB pattern(8) unify united package(P) by sawing.
- Figs. 4 is a view showing the second illustration of white optical semiconductor device according as the present invention practice, each package(P) in the first process has within FR4 PCB pattern(7) by use of cream solder(9), transmitted light epoxy(l l) molds on each package having within FR4 PCB pattern(7).
- each wliite light emitting diode device in the first process be molding epoxy with lens which be formed transmitted light epoxy and then getting high brightness white light emitting diode by minimum use of YAG fluorescent material.
- each white light emitting diode device made low-price has within white light emitting diode the process of work will improve as well as will be able to mass-produce of product having regular color coordinates.
- Figs. 5a, 5b are views showing division-cross section of white optical semiconductor device according as the present invention practice, it is the following that ZnSe-line white light emitting diode be die bonding on molding lead frame(12) arranged multiline or PCB pattern(8) arranged multiline, gold wire(2) be getting to an electrode junction, light diffusive epoxy(HA) be mixing blue photon(18) lighted in ZnSe-line white light emitting diode and YAG photon(19), transmitted light epoxy be potting or transfer molding on this light diffusive epxoy(HA).
- ZnSe-line white light emitting diode be die bonding on molding lead frame(12) arranged multiline or PCB pattern(8) arranged multiline
- gold wire(2) be getting to an electrode junction
- light diffusive epoxy(HA) be mixing blue photon(18) lighted in ZnSe-line white light emitting diode and YAG photon(19)
- transmitted light epoxy be potting or transfer molding on this light diff
- This ZnSe-line white light emitting diode chip(lA) emits blue wavelength photon in the upper and YAG wavelength photon in the lower, so will be able to materialize white light emitting diode having color coordinates of any part as potting any part upon ZnSe white light emitting diode chip(l A) surface by light diffusive epoxy(l 1 A) for mixing well blue wavelength and YAG wavelength photon to white light(20).
- Fig. 6a, 6b are views showing a plain-cross section and a division-cross section of white optical semiconductor device according as the present invention practice, it was formed light emitting diode of YAG wavelength(lB) on PCB pad cup(17), gold wire(2) be getting to an electrode junction with light emitting diode(lB), light emitting diode of blue wavelength(l) die bonding by glue on transmitted light epoxy(l l), gold wire(2) be getting to an electrode junction with light emitting diode of blue wavelength(l), light diffusive epoxy(HA) molding on light emitting diode of blue wavelength(l).
- each is formed perpendicularly chip which emits different light it is light emitting diode to maintain same mixing of white light.
- Figs. 7 illustrates color coordinates distribution of white light emitting diode getting the above the first, second, third practice.
- white light materializing white light emitting diode produces low price than usual white light emitting diode production method, gets high brightness product. And, it gets white light without the passing of a year change.
- the use of epoxy minimizes by mixing regularly high price fluorescent material, always forms fluorescent material epoxy as same thickness, so making cost is lower and gets regular color coordinates and white light with high brightness.
- the density of light flux is able to improve.
- the second practice of the present invention it can solute present making method problem that VF is high and to get same color coordinates is. difficult always.
- light emitting diode chip of YAG wavelength(lB) and light emitting diode of blue wavelength(l) make two floor formation, as the sum total of light emitting form each chip is emitting light brightness of white light it realizes high brightness more than from fivefold to ten times exiting white light emitting diode.
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention relates to White Light Emitting Diode and its method of making, On PCB plate add to Light emitting diode chip of IngaN, GaN-lines that has die bonding and wire bonding, and YAG line’s fluorescent material light be made from transfer mold by epoxy that mixes at a regular rate. Then through sawing process a particular package stick to the other package by cream solder, be second transfer mold by transmitted light epoxy, it’s a each white light emitting diode that get through second sawing process.
Description
WHITE LIGHT EMITTING DIODE AND ITS METHODE OF MAKING
Technical Field
The present invention relates generally White Light Emitting Diode and its method of making, in detail it's about that White Light Emitting Diode which improves regular wavelength-conversion efficiency.
Background Art
Usual Technology about White light emitting diode method of making is like Figs.l that InGaN, GaN-line light emitting chip(430nm~470nm, Blue LED)(1) have within reflection cup(17) and then the other wavelength except light wavelength come from reflection cup(17) absorbs a part of light, the photoluminescence fluorescent material(3) with the other wavelength gets to white light by potting, this is recently the most developmental white light emitting diode method of making. But method like this is very complex and mixing rate of fluorescent material is not regular, a spot occur causing wavelength discordance, visibility is lower. . Also method of getting white light by potting the photoluminescence fluorescent material(3) has difficult process because every product time made different wavelength production according to thickness and mixing rate of fluorescent material, and white light diode is high priced because loss cost of fluorescent material is high, it's difficulty to use commercially white light because brightness is very low.
Disclosure ofthe Invention
The present invention is a solution of usual white emitting diode method of making, as producing multi-package structure white light emitting diode it is a purpose to offer a white light emitting display and its method of making having capable emitting effect because same spectrum distribution and same color coordinates improve existing mass-production problem.
The other purpose of the present invention offer a white light optical semiconductor device and its method of making that brightness and color coordinates, color temperature are same cause the application of YAG epoxy for transfer mold, YAG-line fluorescent material with regular thickness and regular mix rate as well as producing price reduce cause the minimum use of YAG-line fluorescent material.
Another of purpose of the present invention offer a white light emitting diode and its method of making that high price YAG-line fluorescent material remove cause the application of ZnSe-line white emitting diode chip then Blue,
YAG photon coming ZnSe-line white emitting diode chip transfers a white photon and mixes cause the use of low price diffusion epoxy quality.
Another of purpose of the present invention offer a high-brightness white light emitting diode and its method of making that after low price 585nm YAG wavelength emitting diode chip has within lead frame and PCB pad side, molds on transmitted light epoxy, blue wavelength emitting diode chip has within upon transmitted light epoxy, the structure has double molds with diffusion epoxy.
The making method of optical semiconductor device as the present invention achieve such this purpose organizes multi-line that a pair PCB pattern is
the one group of multitude, it has a character that the frist process which doting by a glue every unit PCB pattern, the second process which die bonding light emitting diode chip(430nm~470mn) to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern which arranged in multifarious row be reaching safe in mold press and molding epoxy mixed YAG-line fluorescent material and epoxy, the sixth process which a mold ended series of PCB' pattern unifying by sawing, the seventh process which united package has within multiline FR4 PCB quality copied by cream solder, the eighth process which FR4 PCB arranged multiline reaches safe mold press and molds on transmitted light epoxy, the ninth process which a series of ended mold PCB pattern be unifying by second sawing.
The other practice of white emitting diode method according to the present invention is a pair PCB pattern is the one group of multitude, it has the following that the frist process which doting by a glue every unit PCB pattern, the second process which die bonding light emitting diode chip(430nm~470mn) to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern which arranged in multifarious row be reaching safe in mold press and molding epoxy mixed YAG-line fluorescent material and epoxy, the sixth process which a mold ended series of PCB pattern unifying by sawing, the seventh process which united package has within multiline molding lead frame quality copied by cream solder, the eighth process which molding lead frame arranged multiline be
potting and sticking transmitted light epoxy, the ninth process which a series of ended stick molding lead frame be unifying by trimming and forming.
The other practice of optical semiconductor device method according to the present invention is the following that the frist process which not light emitting diode chip(l)(430nm~470nm) of blue wavelength but ZnSe line white light emitting diode be doting with use by a glue every unit PCB pattern, and the second process which ZnSE line light emitting diode chip be (die) bonding to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern arranged multiline be reaching safe in mold press and molding diffusion epoxy, the fifth process which a series of ended mold PCB pattern be unifying by sawing.
The other practice of optical semiconductor device method according to the present invention is the following that the frist process which not light emitting diode chip(430nm~470nm) of blue wavelength but ZnSe line white light emitting diode be doting with use by a glue every unit PCB pattern, and the second process which ZnSE line light emitting diode chip be die bonding to PCB pad cup part in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern arranged multiline be dotting diffusive epoxy, the fifth process which this PCB pattern be reaching safe in mold press and molding transmitted light epoxy, the sixth process which a series of ended mold PCB pattern be unifying by sawing.
The other practice of optical semiconductor device method according to the present invention is the following that the frist process which not light emitting diode chip(430nm~470nm) of blue wavelength but ZnSe line white light emitting
diode be doting with use by a glue every unit molding lead frame reflection plate, the second process which ZnSE line light emitting diode chip be die bonding to molding lead frame in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which a molding lead frame arranged multiline be dotting diffusive epoxy, the fifth process which multiline molding lead frame with doing diffusive epoxy be potting transmitted light epoxy, the sixth process which a series of ended potting molding lead frame be unifying by trimming and forming.
The other practice of optical semiconductor device method according to the present invention is the following that the frist process which GaAs, AlGaAsP-line light emitting diode chip(520nm~590nm) be doting with use by a glue every unit PCB pattern, the second process which GaAs, AlGaAsP-line light emitting diode chip(520nm~590nm) be die bonding to PCB pattern in glue, the third process which the above light emitting diode chip be getting to an electrode junction by connection with gold, the fourth process which PCB pattern arranged multiline be molding transmitted light epoxy, the fifth process which InGaN, Ga -line light emitting diode chip(430nm~470nm) be die bonding with glue and forming an electrode by gold wire then light-transmitted light die glue be doting upon molded resin with transmitted light epoxy, the sixth process which InGaN, GaN-line light emitting diode chip(430nm~470nm) be die bonding upon molded resin with transmitted light epoxy in glue, the seventh process which the above InGaN, GaN-line light emitting diode chip(430nm~470nm) be getting to an electrode junction by connection with gold, the eighth process which PCB pattern arranged multiline be molding in
diffusive epoxy, the ninth process which multi PCB pattern molded diffusive epoxy be unifying by sawing.
Brief Description ofthe Drawings
Figs. 1 is a view showing the division-cross section of usual white light emitting diode package,
Figs. 2a, 2b and 2c, 2d are views showing a plain-cross section as well as a division-cross section that white light emitting diode has been illustrated individual structure according as the first practice ofthe present invention,
Figs. 3 is a view showing the first process of white light emitting diode according as the first practice ofthe present invention,
Figs. 3b,3c are views showing a plain-cross section as well as a division- cross section of unified package thought Figs.3 practice,
Figs. 4 is a view showing the second process of white light emitting diode according to the first practice ofthe present invention, Figs. 5a and 5b are views showing a division-cross section that white light emitting diode has been illustrated individual structure of the second practice of the present invention made,
Figs. 6a, 6b' are views showing a plain-cross section as well as a division- cross section that high-brightness white light emitting diode according as the third practice of the present invention,
Figs. 7 is a view showing color coordinate distribution-illustration of white light emitting diode according as the first, second and third practice ofthe present.
Best Mode for Carrying Out the Invention
There are detailed explanation of white optical semiconductor device and its method of making according to the present invention refer to following appending draft. Figs. 2a, 2b are views showing a plain-cross section and a division-cross section of white optical semiconductor device according as the present invention practice.
Like the illustration organization of white optical semiconductor device according as the present invention is formed light emitting diode chip(l)(430nm~470nm) die bonding with glue, an current conducting wire(2) for an current conducting of this chip and each package with molded epoxy(3) mixing YAG-line fluorescent material and epoxy, cream solder for this each package has within FR4 PCB pattern(7), epoxy lens(4) molded transmitted light epoxy(l 1) upon this each package(P). Figs. 2a, 2b are views showing a plain-cross section and a division-cross section of white optical semiconductor device according as the present invention other practice. Like the illustration organization of white optical semiconductor device according as the present invention is formed light emitting diode chip(l)(430nm~470nm) die bonding with glue(lθ), an current conducting wire(2) for an current conducting of this chip, each package with molded epoxy (3) mixing YAG-line fluorescent material and epoxy, cream solder(9) for this each package has within another molding lead frame(12), transmitted epoxy(l 1) potting upon molding lead frame pad cup with cream solder inner.
Figs. 3a is a view showing the frist process illustration of white optical semiconductor device according as the present invention practice, Figs. 3a and degree 3 c are views showing a plain-cross section and a division-cross section of each package(P) made above process, a pair PCB pattern(8) arranges multiline as the one group of multitude, glue(lθ) dotting every unit PCB pattern and light emitting diode chip(l)(430nm~470nm) stick to glue dotted in PCB pad cup(17), gold wire(2) getting to an electrode junction the above light emitting diode chip(l), PCB pattern arranged multiline reaches safe in mold press and epoxy(3) mixed YAG-line fluorescent material and epoxy molds and then a series of PCB pattern(8) unify united package(P) by sawing.
Figs. 4 is a view showing the second illustration of white optical semiconductor device according as the present invention practice, each package(P) in the frist process has within FR4 PCB pattern(7) by use of cream solder(9), transmitted light epoxy(l l) molds on each package having within FR4 PCB pattern(7). (reference Figs. 2a, 2b) Herewith each wliite light emitting diode device in the frist process be molding epoxy with lens which be formed transmitted light epoxy and then getting high brightness white light emitting diode by minimum use of YAG fluorescent material. Also, as each white light emitting diode device made low-price has within white light emitting diode the process of work will improve as well as will be able to mass-produce of product having regular color coordinates.
As Figs. 5a, 5b are views showing division-cross section of white optical semiconductor device according as the present invention practice, it is the following that ZnSe-line white light emitting diode be die bonding on molding lead frame(12) arranged multiline or PCB pattern(8) arranged multiline, gold wire(2) be getting to
an electrode junction, light diffusive epoxy(HA) be mixing blue photon(18) lighted in ZnSe-line white light emitting diode and YAG photon(19), transmitted light epoxy be potting or transfer molding on this light diffusive epxoy(HA). This ZnSe-line white light emitting diode chip(lA) emits blue wavelength photon in the upper and YAG wavelength photon in the lower, so will be able to materialize white light emitting diode having color coordinates of any part as potting any part upon ZnSe white light emitting diode chip(l A) surface by light diffusive epoxy(l 1 A) for mixing well blue wavelength and YAG wavelength photon to white light(20).
Fig. 6a, 6b are views showing a plain-cross section and a division-cross section of white optical semiconductor device according as the present invention practice, it was formed light emitting diode of YAG wavelength(lB) on PCB pad cup(17), gold wire(2) be getting to an electrode junction with light emitting diode(lB), light emitting diode of blue wavelength(l) die bonding by glue on transmitted light epoxy(l l), gold wire(2) be getting to an electrode junction with light emitting diode of blue wavelength(l), light diffusive epoxy(HA) molding on light emitting diode of blue wavelength(l). As each is formed perpendicularly chip which emits different light it is light emitting diode to maintain same mixing of white light.
Figs. 7 illustrates color coordinates distribution of white light emitting diode getting the above the frist, second, third practice.
Industrial Applicability
Like the above, white light materializing white light emitting diode according as the present invention produces low price than usual white light emitting
diode production method, gets high brightness product. And, it gets white light without the passing of a year change. According to the frist practice of the present invention the use of epoxy minimizes by mixing regularly high price fluorescent material, always forms fluorescent material epoxy as same thickness, so making cost is lower and gets regular color coordinates and white light with high brightness. Also, as lead frame of molding reflection cup and epoxy of transmitted light lens are formed on fluorescent material epoxy, the density of light flux is able to improve. According to the second practice of the present invention it can solute present making method problem that VF is high and to get same color coordinates is. difficult always. As blue wavelength(490nm) emitted in ZnSe-line light emitting diode chip and YAG wavelength(585nm) mix white light it get same color coordinates, because VF voltage of ZnSe-line light emitting diode chip is lower than 3.5V of exiting white light emitting diode as 2.6V it can solute consumption electronic problem causing VF is high. Also, it can solute fundamental problem with secular variation of white light by time change. According to the third practice ofthe present invention light emitting diode chip of YAG wavelength(lB) and light emitting diode of blue wavelength(l) make two floor formation, as the sum total of light emitting form each chip is emitting light brightness of white light it realizes high brightness more than from fivefold to ten times exiting white light emitting diode.
Claims
1. The frist process that a pair PCB pattern is one group of multitude, arranges multiline, be dotting by glue(lθ) every unit PCB pattern. The second process that light emitting diode chip(430nm~470mn)(l) die bonding to PCB pad cup(17) part in this glue(lθ). The third process that the above light emitting diode chip be getting to an electrode junction by connection with gold. The fourth process that PCB pattern arranged in multifarious row be reaching safe in mold press and molding epoxy (3) mixed YAG-line fluorescent material and epoxy. The sixth process that a mold ended series of PCB pattern unifying by sawing. The seventh process that united package has within multiline molding lead frame quality copied by cream solder. The eighth process that FR4 PCB pattern arranged multiline be reaching safe in mold press and be molding transmitted light epoxy(l l). The ninth process that a series of ended mold FR4 PCB pattern be unifying by the second sawing. White light emitting diode method of making with the above all of the character.
2. White light emitting diode made from making method of Claims 1.
3. The frist process that a pair PCB pattern is one group of multitude, arranges multiline, be dotting by glue(lθ) every unit PCB pattern.The second process that light emitting diode chip(430nm~470mn)(l) die bonding to PCB pad cup(17) part in this glue(lθ). The third process that the above light emitting diode chip be getting to an electrode junction by connection with gold wire(2). The fourth process that PCB pattern arranged in multifarious row be reaching safe in mold press and molding epoxy(3) mixed YAG-line fluorescent material and epoxy. The sixth process that a mold ended series of PCB 'pattern unifying by sawing. The seventh process that united package has within multiline molding lead frame(12) copied by cream solder(9). The eighth process that molding lead frame(12) arranged multiline be potting and sticking transmitted light epoxy(l 1). The ninth process that a series of ended stick molding lead frame be unifying by trimming and forming. Wliite light emitting diode method of making with the above all ofthe character.
4. White light emitting diode made from making method of Claims 3.
5. The frist process that ZnSe line white light emitting diode chip(lA) be doting with use by a glue(lθ) every unit PCB pattern(8).The second process that
ZnSe line light emitting diode chip(lA) be die bonding to PCB pad cup(17) in glue. The third process that the above light emitting diode chip(lA) be getting to an electrode junction by connection with gold wire(2). The fourth process that PCB pattern arranged multiline be reaching safe in mold press and molding diffusion epoxy(l 1 A). The fifth process that a series of ended mold PCB pattern be unifying by sawing. White light emitting diode method of making with the above all of the character.
6. White light emitting diode made from making method of Claims 5.
7. The frist process that ZnSe line white light emitting diode chip(lA) be doting with use by a glue every cup of unit molding lead frame(12). The second process that ZnSe line light emitting diode chip(l A) be die bonding to molding lead frame(12) in glue(lθ). The third process that the above light emitting diode chip(l A) be getting to an electrode junction by connection with gold wire(2). The fourth process that molding lead frame(12) arranged multiline be dotting diffusive epoxy(l 1 A). The fifth process that multiline molding lead frame(12) with diffusive epoxy(l 1 A) be potting transmitted light epoxy(l 1). The sixth process that a series of ended potting molding lead frame be unifying by trimming and forming. White light emitting diode method of making with the above all ofthe character.
8. White light emitting diode made from making method of Claims 7.
9. The frist process that GaAs, AlGaAsP-line light emitting diode chip(520nm~590nm)(lB) be doting with use by a glue(lθ) every unit PCB pattern(8). The second process that GaAs, AlGaAsP-line light emitting diode chip(520nm~590nm)(lB) be die bonding to PCB pattern(8) in glue. The third process that the above light emitting diode chip(lB) be getting to an electrode junction by connection with gold wire(2). The fourth process that PCB pattern(8) arranged multiline be molding transmitted light epoxy(l l). The fifth process that InGaN, GaN-line light emitting diode chip(430nm~470nm)(l) be die bonding with glue(lOA). The sixth process that InGaN, GaN-line light emitting diode chip(430nm~470nm)(l) be die bonding upon molded resin with transmitted light epoxy(l l) in glue. The seventh process that the above InGaN, GaN-line light emitting diode chip(430nm~470nm)(l) be getting to an electrode junction by connection with gold wire(2). The eighth process that PCB pattern(8) arranged multiline be molding in diffusive epoxy(HA). The ninth process that multi PCB pattern molded diffusive epoxy(HA) be unifying by sawing. White light emitting diode method of making with the above all ofthe character.
10. White light emitting diode made from making method of Claims 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004532445A JP2005537655A (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and method for manufacturing white light emitting diode |
| AU2003257724A AU2003257724A1 (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its methode of making |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0052521A KR100462394B1 (en) | 2002-09-02 | 2002-09-02 | White Light Emitting Diode and its method of making |
| KR10-2002-0052521 | 2002-09-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2004021459A1 true WO2004021459A1 (en) | 2004-03-11 |
Family
ID=31973619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2003/001780 WO2004021459A1 (en) | 2002-09-02 | 2003-09-01 | White light emitting diode and its methode of making |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2005537655A (en) |
| KR (1) | KR100462394B1 (en) |
| CN (1) | CN1679178A (en) |
| AU (1) | AU2003257724A1 (en) |
| WO (1) | WO2004021459A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2429840A (en) * | 2005-08-12 | 2007-03-07 | Avago Tech Ecbu Ip | Phosphor-converted LED device |
| CN100444417C (en) * | 2005-06-20 | 2008-12-17 | 三星电机株式会社 | Led package with metal reflection layer and method of manufacturing the same |
| CN102000657A (en) * | 2009-08-28 | 2011-04-06 | 三星Led株式会社 | Resin application apparatus, optical property correction apparatus and method |
| US8039848B2 (en) | 2006-08-21 | 2011-10-18 | Cree, Inc. | Semiconductor light emitting device substrate strips and packaged semiconductor light emitting devices |
| CN112718545A (en) * | 2020-11-11 | 2021-04-30 | 珠海格力智能装备有限公司 | Spout gluey machine visual detection device and full-automatic gluey assembly line that spouts |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100414701C (en) * | 2006-06-08 | 2008-08-27 | 弘元科技有限公司 | Light-emitting system, light-emitting device, and forming method therefor |
| JP5581060B2 (en) * | 2007-03-08 | 2014-08-27 | センセオニクス，インコーポレーテッド | Light-emitting diodes for harsh environments |
| CN102015123A (en) * | 2008-01-18 | 2011-04-13 | 平易密科控股有限公司 | Frocess for organic coating |
| CN101619136B (en) * | 2008-06-30 | 2011-11-23 | 柏腾科技股份有限公司 | Organic film for converting spectra and LED chip packaging module |
| KR101509227B1 (en) * | 2008-07-21 | 2015-04-10 | 서울반도체 주식회사 | Method for manufacturing led package |
| KR101106106B1 (en) * | 2009-11-26 | 2012-01-18 | 정상열 | A boiler based on vacuum circulation |
| JP5375776B2 (en) | 2010-09-09 | 2013-12-25 | パナソニック株式会社 | LED package manufacturing system |
| KR20120067153A (en) | 2010-12-15 | 2012-06-25 | 삼성엘이디 주식회사 | Light emitting device, light emitting device package, manufacturing method of light emitting device, and packaging method of light emitting device |
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- 2003-09-01 AU AU2003257724A patent/AU2003257724A1/en not_active Abandoned
- 2003-09-01 JP JP2004532445A patent/JP2005537655A/en active Pending
- 2003-09-01 CN CN 03820799 patent/CN1679178A/en active Pending
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| JPH06326324A (en) * | 1993-05-14 | 1994-11-25 | Nec Corp | Nonvolatile semiconductor storage device and its manufacture |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100444417C (en) * | 2005-06-20 | 2008-12-17 | 三星电机株式会社 | Led package with metal reflection layer and method of manufacturing the same |
| US7687292B2 (en) | 2005-06-20 | 2010-03-30 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package with metal reflective layer and method of manufacturing the same |
| US7329907B2 (en) | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
| US7667239B2 (en) | 2005-08-12 | 2010-02-23 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Phosphor-converted LED devices having improved light distribution uniformity |
| GB2429840B (en) * | 2005-08-12 | 2011-02-23 | Avago Tech Ecbu Ip | Phosphor-converted LED devices having improved light distribution uniformity |
| GB2429840A (en) * | 2005-08-12 | 2007-03-07 | Avago Tech Ecbu Ip | Phosphor-converted LED device |
| US8410491B2 (en) | 2006-08-21 | 2013-04-02 | Cree, Inc. | Semiconductor light emitting device substrate strips and packaged semiconductor light emitting devices |
| US8039848B2 (en) | 2006-08-21 | 2011-10-18 | Cree, Inc. | Semiconductor light emitting device substrate strips and packaged semiconductor light emitting devices |
| CN102000657A (en) * | 2009-08-28 | 2011-04-06 | 三星Led株式会社 | Resin application apparatus, optical property correction apparatus and method |
| CN102000657B (en) * | 2009-08-28 | 2015-03-11 | 三星电子株式会社 | Resin application apparatus, optical property correction apparatus and method |
| US9373553B2 (en) | 2009-08-28 | 2016-06-21 | Samsung Electronics Co., Ltd. | Resin application apparatus, optical property correction apparatus and method, and method for manufacturing LED package |
| CN112718545A (en) * | 2020-11-11 | 2021-04-30 | 珠海格力智能装备有限公司 | Spout gluey machine visual detection device and full-automatic gluey assembly line that spouts |
| CN112718545B (en) * | 2020-11-11 | 2022-09-20 | 珠海格力智能装备有限公司 | Spout gluey machine visual detection device and full-automatic gluey assembly line that spouts |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003257724A1 (en) | 2004-03-19 |
| CN1679178A (en) | 2005-10-05 |
| JP2005537655A (en) | 2005-12-08 |
| KR20040021079A (en) | 2004-03-10 |
| KR100462394B1 (en) | 2004-12-17 |
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