KR20130007823A - Manufacturing method for light emitting device - Google Patents
Manufacturing method for light emitting device Download PDFInfo
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- KR20130007823A KR20130007823A KR1020110068401A KR20110068401A KR20130007823A KR 20130007823 A KR20130007823 A KR 20130007823A KR 1020110068401 A KR1020110068401 A KR 1020110068401A KR 20110068401 A KR20110068401 A KR 20110068401A KR 20130007823 A KR20130007823 A KR 20130007823A
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- South Korea
- Prior art keywords
- light emitting
- emitting device
- curing
- resin
- temperature
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 64
- 239000011347 resin Substances 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 230000035515 penetration Effects 0.000 abstract description 5
- 238000001723 curing Methods 0.000 description 90
- 239000010408 film Substances 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 239000007788 liquid Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000007787 solid Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920012310 Polyamide 9T (PA9T) Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
The embodiment relates to a method of manufacturing a light emitting device package.
Fluorescent lamps are increasingly being replaced by other light sources because they are against the trend of the future lighting market aiming to be environmentally friendly due to frequent replacement and the use of fluorescent materials.
The most popular light source is LED (Light Emitting Diode), which uses the characteristics of compound semiconductors to convert electrical signals into the form of light from the infrared to the ultraviolet region, including the visible region. In addition to its advantages such as processing speed and low power consumption, it is also considered as the next generation light source due to its environmentally friendly and high energy saving effect. Therefore, the use of LED to replace the existing fluorescent lamp is actively in progress.
Currently, semiconductor light emitting devices such as LEDs have been applied to various devices including televisions, monitors, notebooks, mobile phones, and other display devices. In particular, they are widely used as backlight units in place of conventional cold cathode fluorescent lamps, CCFLs. have.
In order to use the LED device in the lighting system, the light emitting device is encapsulated with resin. Degeneration of the resin is caused by heat emitted from the light emitting device or foreign matter, which affects the brightness and reliability of the light emitting device package. Korean Patent Laid-Open Publication No. 10-2007-0032320 provides a light emitting device having improved reliability by using a silicone resin composition, but does not mention a method for improving reliability in terms of a curing method using a conventional resin.
The embodiment provides a method of manufacturing a light emitting device package having improved reliability by controlling and curing a curing condition such as a curing temperature, a curing time, a gas atmosphere, and the like of a resin filled in the light emitting device package.
The method of manufacturing a light emitting device package according to an embodiment includes mounting a light emitting device on a package body in which a cavity is formed, filling a resin into the cavity, and curing the resin to a first curing temperature at a first curing step. And a second curing step of curing the resin material at a second curing temperature that is greater than the first curing temperature, wherein an increase in temperature per hour when the resin is increased to the first curing temperature is performed at the first curing temperature. It may be less than the temperature increase per hour when increasing to the second curing temperature, the duration of the first curing step may be longer than the duration of the second curing step.
The resin of the light emitting device package manufactured by the method of manufacturing the light emitting device package according to the embodiment may improve the degree of curing and hydrophobicity, thereby preventing the penetration of moisture and oxygen, thereby preventing discoloration and deterioration of the brightness of the light emitting device package.
1 is a cross-sectional view showing a cross section of a light emitting device package according to the embodiment.
2 is a graph showing a curing temperature with time according to an embodiment.
3 is a view showing a contact angle test for the resin of the light emitting device package according to the embodiment.
4 is a view showing the water penetration degree after the water test of the light emitting device package according to the embodiment.
5 is a view showing a cross section after using the light emitting device package according to the embodiment for 1200 hours.
6A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 6B is a cross-sectional view illustrating a DD ′ cross section of the lighting device of FIG. 6A.
7 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.
8 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.
Advantages and features of the present invention, and methods of achieving the same will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.
The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can include both downward and upward directions. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.
Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.
Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.
1 is a cross-sectional view showing a cross section of a light emitting device package according to the embodiment.
Referring to FIG. 1, the light
The
In addition, the
The
The
As the directivity of the light decreases, the concentration of light emitted from the
On the other hand, the shape viewed from above the cavity (C) formed in the
In this case, a reflective coating film (not shown) may be formed on side and bottom surfaces of the cavity C forming the inner wall of the cavity C. Here, the surface of the
In addition, the
The
The light emitting diode may be, for example, a colored light emitting diode that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting diode that emits ultraviolet light. In the exemplary embodiment, a single light emitting diode is illustrated as being provided at the center portion, but the present invention is not limited thereto, and a plurality of light emitting diodes may be provided.
In addition, the
The
The hardening method of the
The surface of the
Further, other resin-shaped resin materials may be formed or adhered on the
The
That is, the phosphor may be excited by the light having the first light emitted from the
Similarly, when the
Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.
2 is a graph showing a curing temperature with time when curing the resin material filled in the light emitting device package according to the embodiment.
In the graph of FIG. 2, the horizontal axis represents time and the vertical axis represents temperature. Referring to the graph of FIG. 2, the light emitting device package filled with the resin is gradually heated to increase the temperature (section A), and the initial temperature may be about 25 ° C. at room temperature.
The temperature of the resin may be increased until the first curing temperature T1 of the first curing step is reached, the temperature may be gradually increased at one time, or the temperature may be increased over several steps.
At this time, by increasing the temperature to the first curing temperature (T1) in several steps, it is possible to minimize the internal stress generation of the resin material. When the internal stress of the resin is minimized, the reliability of the wire bonding encapsulated with the resin may be increased, thereby improving the reliability of the light emitting device package.
When the temperature is increased and the first curing temperature T1 is reached, the resin is primarily cured while maintaining the temperature without increasing the temperature (Section B). At this time, when the curing at a temperature lower than 100 ℃ does not cause sufficient curing and even when curing at temperatures higher than 190 ℃ the degree of reliability improvement is not large, the first curing temperature (T1) may be 100 ℃ to 190 ℃.
In addition, if the first curing time is less than 30 minutes, sufficient curing does not occur, and if the workability is lowered beyond 300 minutes, the duration of the first curing step may be 30 minutes to 300 minutes.
After completion of the first curing step, the temperature of the resin is increased again to the second curing temperature T2 of the second curing step (section C).
At this time, the temperature increase per hour when increasing from the first curing temperature (T1) to the second curing temperature (T2) may be greater than the hourly temperature increase when increasing to the first curing temperature (T1).
When the temperature of the resin reaches the second curing temperature T2, the resin is cured secondly while maintaining the temperature without increasing the temperature (Section D). At this time, curing at a temperature lower than 200 ° C. does not sufficiently cure the uncured portion of the resin material, and curing at a temperature higher than 300 ° C. may cause the package body to melt. Can be.
In addition, when the secondary curing is less than 1 second, sufficient curing does not occur. If the curing is continued for more than 30 minutes for a long time, the degree of curing of the resin may be increased, but the resin may be denatured. Therefore, the duration of the second curing step may be 1 second to 30 minutes.
After the second curing step is finished, the temperature of the resin is reduced to room temperature of about 25 ℃ (section E).
The gaseous atmosphere of the first curing step and the gaseous atmosphere of the second curing step may be different, the gaseous atmosphere of the first curing step or the gaseous atmosphere of the second curing step may be an inert gas atmosphere, The gas atmospheres of the A, C, and E sections other than the secondary curing step (Section B) and the second secondary curing step (Section D) may also be inert gas atmospheres. When the gas atmosphere is made to be an inert gas atmosphere during curing of the resin, it is possible to prevent the surface of the lead frame or the like from reacting with an active gas such as air to oxidize during the curing process.
Table 1 is a table showing the degree of curing of the resin according to the duration of the second curing step.
Referring to Table 1, it can be seen that the degree of curing increases when the secondary curing is added as well as the primary curing. The degree of cure of the resin (Reference) that is only the first cure but not the second cure is 33, the degree of cure of the resin that undergoes the second cure is greater than 33, and even if the duration of the second cure step is longer, The degree of curing remains constant without significant change. In the second curing step, since the uncured hardening material of the resin reacts in the first curing step, the degree of curing may increase and the reliability of the resin may be improved.
3 is a view showing a contact angle test for the resin of the light emitting device package according to the embodiment. The contact angle test is to determine the degree of hydrophilicity of the resin, which can be determined using the contact angle.
Referring to FIG. 3, when a liquid such as water is placed on a solid, the liquid becomes a droplet maintaining a constant lens shape. At this time, the surface of the liquid becomes curved, and the surface of the solid and the surface of the liquid form a constant angle. The measurement of this angle inside the liquid is called a contact angle (d).
When the contact angle d is 0 °, the hydrophilicity of the liquid on the solid surface is maximum and the liquid can completely wet the solid surface. On the other hand, when the contact angle d is 90 ° or more, there is no hydrophilicity to the liquid on the solid surface. Therefore, in the range where the contact angle d is in the range of 0 ° to 90 °, the value may be an index for evaluating the hydrophilicity of the liquid on the solid surface.
When the solid is made of a resin, the hydrophilicity of the resin can be determined by using a contact angle. The contact angles according to the curing time of the resin material cured secondly at a second curing temperature of 256 ° C. are shown in Table 2 below.
Referring to Table 2, the contact angle (d) of the resin (Reference) which is only the first curing but not the second curing is 79.4 °, and the contact angle increases as the duration of the second curing step is longer. Able to know. When the duration of the second curing step is 10 minutes, the contact angle of the resin is 87.9 degrees, showing a value similar to 90 degrees.
As the secondary curing is performed, the contact angle increases, and the degree of hydrophilicity of the resin is decreased. By secondary curing, surface modification of the surface of the resin may occur from hydrophilicity to hydrophilicity. As described above, when the surface of the resin is hydrophilic, moisture does not penetrate into the resin, and thus, the light emitting device may be protected from external moisture, thereby increasing reliability of the package.
Table 3 shows the thermal shock test results of the light emitting device package according to the embodiment.
Referring to Table 3, it can be seen that the number of failures of the light emitting device package subjected to the second curing is reduced compared to the light emitting device package (Reference) that only hardens the resin but not the second curing. As the second curing temperature, which is the secondary curing temperature, increases, the number of failures decreases, and when the second curing temperature is 256 ° C, the number of failures is minimal.
With the secondary curing, the reliability of the resin increases, which leads to a reduction in wire deformation and thus a failure rate of the light emitting device package in the thermal shock test.
4 is a view showing the water penetration degree after the water test of the light emitting device package according to the embodiment.
Figure 4 (a) is a view showing a light emitting device package only the first curing without the secondary curing, Figure 4 (b) is a light emitting device package of the first curing and the second curing The figure shown.
Figure 4 (a) can be confirmed that there is a lot of moisture on the surface of the lead frame due to the water penetrating the resin material, and Figure 4 (b) can be confirmed that there is no change even after the water test because it does not penetrate the moisture.
When the second curing step is additionally performed after the first curing step as described above, curing of the resin is additionally performed, and external moisture or gas is prevented from penetrating or diffusing the resin, thereby improving reliability of the light emitting device package. do.
5 is a view showing a cross section after driving the light emitting device package according to the embodiment for 1200 hours.
Referring to FIG. 5, (a) of FIG. 5 illustrates a light emitting device package that is not first cured but only cured. The metal or phosphor such as a lead frame inside the package reacts with external moisture or oxygen. It can be confirmed that the discoloration. As described above, when the metal or the phosphor inside the light emitting device package reacts with external moisture or oxygen, foreign matter may be generated, thereby reducing the brightness of the light emitting device package.
On the other hand, Figure 5 (b) can prevent the penetration of moisture or oxygen by adding a secondary curing in addition to the primary curing, it can be confirmed that almost no discoloration occurs.
Therefore, by additionally performing the second curing step, it is possible to prevent the color change and the brightness of the light emitting device package.
6A is a perspective view illustrating a lighting apparatus including a light emitting device package according to an embodiment, and FIG. 6B is a cross-sectional view illustrating a cross-sectional view taken along line D-D 'of the lighting apparatus of FIG. 6A.
Hereinafter, in order to describe the shape of the
That is, FIG. 6B is a cross-sectional view of the
6A and 6B, the
The lower surface of the
The light emitting
Meanwhile, the light emitting
Since a film formed of a conductive material such as a metal causes a lot of interference of light, the intensity of the light wave may be strengthened by the interaction of the light wave, thereby effectively extracting and diffusing the light. The interference and diffraction of the light can effectively extract the light. Therefore, the efficiency of the
The
The
On the other hand, since the light generated from the light emitting
7 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.
7 is an edge-light method, the liquid
The liquid
The
The thin
The thin
The
The light emitting
In particular, the light emitting
On the other hand, the
8 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.
However, the parts shown and described in Fig. 7 are not repeatedly described in detail.
8, the liquid
Since the liquid
The
Light emitting device module 423 A plurality of light emitting device packages 422 may be mounted to include a
In particular, the light emitting
The
On the other hand, the light generated from the light emitting
Although the above has been illustrated and described with respect to the preferred embodiment of the present invention, the present invention is not limited to the above-described specific embodiment, but in the technical field to which the invention belongs without departing from the gist of the invention as claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.
110: package body 120: lead frame
130: light emitting device 140: resin
Claims (7)
Filling a resin into the cavity;
A first curing step of curing the resin at a first curing temperature; And
A second curing step of curing the resin material at a second curing temperature greater than the first curing temperature,
The temperature increase per hour when increasing to the first curing temperature is less than the temperature increase per hour when increasing from the first curing temperature to the second curing temperature, and the duration of the first curing step is the second difference. Method of manufacturing a light emitting device package longer than the duration of the curing step.
The gas atmosphere of the first curing step and the gas atmosphere of the second curing step is different manufacturing method of the light emitting device package.
The gas atmosphere of the second curing step is an inert gas manufacturing method of the light emitting device package.
The first curing temperature is 100 ℃ to 190 ℃ manufacturing method of the light emitting device package.
The second curing temperature is a manufacturing method of the light emitting device package 200 ℃ to 300 ℃.
The duration of the first curing step is 30 minutes to 300 minutes manufacturing method of the light emitting device package.
The duration of the second curing step is a method of manufacturing a light emitting device package 1 second to 30 minutes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020110068401A KR20130007823A (en) | 2011-07-11 | 2011-07-11 | Manufacturing method for light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110068401A KR20130007823A (en) | 2011-07-11 | 2011-07-11 | Manufacturing method for light emitting device |
Publications (1)
Publication Number | Publication Date |
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KR20130007823A true KR20130007823A (en) | 2013-01-21 |
Family
ID=47838127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020110068401A KR20130007823A (en) | 2011-07-11 | 2011-07-11 | Manufacturing method for light emitting device |
Country Status (1)
Country | Link |
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KR (1) | KR20130007823A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102051484B1 (en) * | 2019-02-22 | 2019-12-04 | (주)라이타이저 | Package light emitting diode and manufacturing method thereof |
-
2011
- 2011-07-11 KR KR1020110068401A patent/KR20130007823A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102051484B1 (en) * | 2019-02-22 | 2019-12-04 | (주)라이타이저 | Package light emitting diode and manufacturing method thereof |
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