KR20120073929A - Light emitting device package - Google Patents
Light emitting device package Download PDFInfo
- Publication number
- KR20120073929A KR20120073929A KR1020100135856A KR20100135856A KR20120073929A KR 20120073929 A KR20120073929 A KR 20120073929A KR 1020100135856 A KR1020100135856 A KR 1020100135856A KR 20100135856 A KR20100135856 A KR 20100135856A KR 20120073929 A KR20120073929 A KR 20120073929A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- device package
- light
- light source
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 7
- 230000001154 acute effect Effects 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
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- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- -1 YAG Chemical compound 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000006089 photosensitive glass Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001029 Hf alloy Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920012310 Polyamide 9T (PA9T) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Embodiments relate to a light emitting device package including a lead frame.
Light Emitting Diode (LED) is a device that converts an electric signal into a light form using the characteristics of a compound semiconductor, and is used for home appliances, remote controllers, electronic displays, indicators, and various automation devices. There is a trend.
The light emitting device package may include a light source unit emitting light when power is applied, and a lead frame electrically connected to the light source unit to transfer current. The light source unit may be directly mounted to the lead frame or electrically connected to the lead frame by wire bonding.
When the lead frame and the light source are electrically connected by wire bonding, the height and length of the wire, that is, the height and distance required for wire bonding, are important factors for determining the size of the light emitting device package. As the height and distance required for wire bonding become larger, the size of the light emitting device package may increase, which may lower economic efficiency, workability, and utility. Therefore, shortening the height and distance required for wire bonding remains a big problem in the manufacture of light emitting device packages.
Embodiments provide a light emitting device package in which a light source unit is mounted in a groove formed in a lead frame to shorten a height and a distance required for wire bonding, and a size of a light emitting device package is reduced, thereby improving economic efficiency, workability, and efficiency. .
The light emitting device package according to the embodiment includes a body having a cavity, first and second lead frames mounted on the body, a light source unit electrically connected to the first and lead frames, a second lead frame and the light source unit electrically It includes a wire for connecting, the first lead frame includes a groove portion and the light source portion is mounted on the groove portion.
The groove also includes a bottom and a side surface.
The side also includes an inclined surface.
In addition, the bottom surface includes an inclined surface.
In the light emitting device package according to the embodiment, since the groove is formed in the lead frame and the light source is mounted on the bottom of the groove, the height of the wire is lowered and the distance between the points where the wire is bonded is shortened, thereby reducing the size of the light emitting device package. Therefore, the economy, workability, and utility of the light emitting device package can be increased.
1A is a perspective view of a light emitting device package according to an embodiment;
1B is a sectional view showing a light emitting device package according to the embodiment;
2 is a cross-sectional view showing a light emitting device package according to the embodiment;
3 is a cross-sectional view showing a light emitting device package according to the embodiment;
4A is a perspective view of a lighting device including a light emitting device package according to an embodiment;
4B is a sectional view showing a lighting apparatus including a light emitting device package according to an embodiment;
5 is an exploded perspective view showing a liquid crystal display device including a light emitting device package according to the embodiment;
6 is an exploded perspective view illustrating a liquid crystal display including a light emitting device package according to an embodiment.
In the drawings, the thickness or size of each component is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size. In addition, the same code | symbol is used about the same structure.
Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings.
1A and 1B are a perspective view and a cross-sectional view of a light emitting device package according to an embodiment.
1A and 1B, the light
The
The inner side surface of the
As the direction angle of the light decreases, the concentration of light emitted from the
On the other hand, the shape of the
The
The
In addition, the light emitting diode is applicable to both a horizontal type in which the electrical terminals are formed on the upper surface, or to a vertical type or flip chip formed on the upper and lower surfaces. .
The resin layer (not shown) may be filled in the
The resin layer (not shown) may be formed of silicon, epoxy, and other resin materials.
In addition, the resin layer (not shown) may include a phosphor, and the phosphor may be selected as the wavelength of the light emitted from the
The phosphor may be one of a blue light emitting phosphor, a blue green light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor according to a wavelength of light emitted from the
That is, the phosphor may be excited by the light having the first light emitted from the
Similarly, when the
Such phosphor may be a known phosphor such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.
The first and
The
The
Meanwhile, although the
The
On the other hand, the shape of the
Since the
Preferably, the depth P of the
2 is a cross-sectional view showing a light emitting device package according to the embodiment.
Referring to FIG. 2, the
As the
Since the
Preferably, the angles k and k 'formed by the
3 is a cross-sectional view showing a light emitting device package according to the embodiment.
Referring to FIG. 3, the
Since the
Since the
Preferably, each j may be acute. When j is greater than 90 °, light generated from the
Hereinafter, in order to describe the shape of the
That is, FIG. 4B is a cross-sectional view of the
4A and 4B, the
The light emitting
The light emitting
In particular, the light emitting
The
The
On the other hand, since the light generated from the light emitting
5 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment.
5 is an edge-light method, and the
The liquid
The
The thin film transistor substrate 514 is electrically connected to the printed
The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.
The
The light emitting
In particular, since the light emitting
Meanwhile, the
6 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment. However, the parts shown and described in Fig. 5 are not repeatedly described in detail.
6 illustrates a direct method, the
Since the liquid
The
LED Module 623 A plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 may be mounted to include a
In particular, since the light emitting
The
On the other hand, the light generated from the light emitting
Meanwhile, the lighting system including the light emitting device package according to the embodiment may include a backlight, a lighting device, and the like, but is not limited thereto.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.
110: body 130: light source
140: first lead frame 150: second lead frame
160: wire 170: groove
Claims (7)
First and second lead frames mounted to the body;
A light source unit electrically connected to the first lead frame; And
And a wire electrically connecting the second lead frame and the light source unit.
The first lead frame includes a groove portion,
The light source unit package is mounted on the light source portion.
The depth of the groove portion is a light emitting device package of 0.1 times to 0.5 times the height of the light source.
The groove portion includes a bottom surface and a side surface,
The side surface is a light emitting device package including at least one inclined surface.
The angle formed by the inclined surface and the bottom surface is an obtuse angle light emitting device package.
The groove portion includes a bottom forming a bottom surface, and a side forming a side,
The bottom surface is a light emitting device package including at least one inclined surface.
The angle formed by the inclined surface and the bottom of the cavity is an acute angle light emitting device package.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100135856A KR20120073929A (en) | 2010-12-27 | 2010-12-27 | Light emitting device package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100135856A KR20120073929A (en) | 2010-12-27 | 2010-12-27 | Light emitting device package |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120073929A true KR20120073929A (en) | 2012-07-05 |
Family
ID=46708203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100135856A KR20120073929A (en) | 2010-12-27 | 2010-12-27 | Light emitting device package |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20120073929A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022128281A1 (en) * | 2020-12-16 | 2022-06-23 | Ams-Osram International Gmbh | Component with structured leadframe and method for producing a component |
-
2010
- 2010-12-27 KR KR1020100135856A patent/KR20120073929A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022128281A1 (en) * | 2020-12-16 | 2022-06-23 | Ams-Osram International Gmbh | Component with structured leadframe and method for producing a component |
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---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |