KR20120045539A - Light emitting device package - Google Patents
Light emitting device package Download PDFInfo
- Publication number
- KR20120045539A KR20120045539A KR1020100107146A KR20100107146A KR20120045539A KR 20120045539 A KR20120045539 A KR 20120045539A KR 1020100107146 A KR1020100107146 A KR 1020100107146A KR 20100107146 A KR20100107146 A KR 20100107146A KR 20120045539 A KR20120045539 A KR 20120045539A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- device package
- light
- light source
- Prior art date
Links
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
Description
An embodiment relates to a light emitting device package.
Currently, semiconductor light emitting devices such as LEDs are applied to various devices including televisions, monitors, notebooks, mobile phones, and other display devices, and in particular, are widely used as backlight units in place of existing CCFLs.
The light emitting device package may include a light source unit and a lead frame. In order to electrically connect the light source unit and the lead frame, wire bonding by wires may be formed. When the light source unit and the lead frame are wire bonded by a wire, the reliability of wire bonding is directly related to the reliability of the light emitting device package.
Embodiments provide a light emitting device package in which roughness is formed in a region where wires on a lead frame are bonded, thereby improving reliability of wire bonding and light efficiency.
The light emitting device package according to the embodiment includes a body including a cavity and a wall portion, first and second lead frames mounted on the body, and a light source unit electrically connected to the first and second frames. At least one of the two lead frames includes a wire bonding region wire-bonded with the light source unit, a roughness is formed in the wire bonding region, and an auxiliary partition wall formed between the wire bonding region and the light source unit.
In addition, the roughness may consist of a plurality of protrusions.
In addition, the protrusions may be formed non-uniformly.
In addition, the roughness may consist of a plurality of grooves.
In addition, the groove portion may be formed non-uniformly.
In addition, the roughness may be formed wider than the wire bonding region.
In addition, the auxiliary partition wall may be lower than the height of the light source unit.
In addition, the auxiliary partition wall may include an inclined surface.
In addition, the auxiliary partition wall may include a reflective layer.
The light emitting device package according to the embodiment may increase the contact area wire-bonded to each lead frame, thereby improving bonding reliability and reducing bonding defects. In addition, due to the improved reliability of wire bonding, a thin wire may be used and the wire loop height may be reduced, thereby reducing the size of the light emitting device package. In addition, since scattering of light due to roughness is prevented through the auxiliary partition wall, deterioration of luminous efficiency of the light emitting device package may be prevented.
1A is a cross-sectional view illustrating a structure of a light emitting device package according to an embodiment;
1B is a cross-sectional view showing the structure of a light emitting device package according to the embodiment;
1C to 1E are partial perspective views of a region where roughness of the first lead frame is formed;
2A is a cross-sectional view illustrating an inventive device package according to an embodiment;
2B to 2D are partial cross-sectional views of a region in which an auxiliary partition wall of a second lead frame is formed;
3A and 3B are partial cross-sectional views of a region in which an auxiliary partition wall of a second lead frame is formed;
4A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment;
4b is a sectional view showing a section CC ′ of the lighting apparatus of FIG. 4a;
5 is an exploded perspective view of a liquid crystal display device including a light emitting device package according to an embodiment; and
6 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment.
In the drawings, the thickness or size of each component is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size and area of each component does not necessarily reflect the actual size or area.
Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.
1A and 1B are cross-sectional views illustrating a structure of a light emitting device package according to an embodiment, and FIGS. 1C to 1E are partial perspective views of regions in which roughness of a first lead frame is formed.
Referring to FIG. 1A, the light
The
The
An inclined surface may be formed on the inner surface of the
As the direction angle of the light decreases, the concentration of light emitted from the
The
On the other hand, the shape of the
The
The
In addition, the light emitting diode is applicable to both a horizontal type in which the electrical terminals are formed on the upper surface, or to a vertical type formed on the upper and lower surfaces.
Meanwhile, a resin layer (not shown) may be formed in the
The resin layer (not shown) may be formed of silicon, epoxy, and other resin materials.
In addition, the resin layer (not shown) may include a phosphor, and the phosphor may be selected from a wavelength of light emitted from the
The phosphor may be one of a blue light emitting phosphor, a blue green light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor according to a wavelength of light emitted from the
That is, the phosphor may be excited by the light having the first light emitted from the
Similarly, when the
Such phosphors may be known phosphors such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride, phosphate, etc. Do not.
The first and second lead frames 140 and 142 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum (Ta). , Platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge) , Hafnium (Hf), ruthenium (Ru), iron (Fe) may include one or more materials or alloys. In addition, each of the lead frames 140 and 142 may be formed to have a single layer or a multilayer structure. As shown in the drawings, several lead frames (not shown) may be provided in addition to the first and second lead frames 140 and 142. It may be implemented, but not limited thereto.
The
The first and second lead frames 140 and 142 may include a
The
Meanwhile, the
Meanwhile, as illustrated in FIG. 1E, the
As the
The light emitting
The
The
Since the
Preferably, the
Meanwhile, in FIGS. 1A and 1B, the
2A is a cross-sectional view illustrating the inventive device package according to the embodiment of the present invention, and FIGS. 2B to 2D are partial cross-sectional views of a region in which an auxiliary partition wall shown in FIG. 2A is formed.
2A to 2D, at least one region of the
In FIG. 2B, the
When at least one area of the
3A and 3B are partial cross-sectional views illustrating a light emitting device package according to an embodiment.
Referring to FIGS. 3A and 3B, the
Preferably, the
4A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 4B is a cross-sectional view illustrating a cross-sectional view taken along line C-C 'of the lighting device of FIG. 4A.
Hereinafter, in order to describe the shape of the
That is, FIG. 4B is a cross-sectional view of the
4A and 4B, the
The light emitting
The light emitting
The light emitting
The
The
On the other hand, since the light generated from the light emitting
5 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment.
5 is an edge-light method, and the
The liquid
The
The thin film transistor substrate 514 is electrically connected to the printed
The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.
The
The light emitting
In particular, roughness (not shown) is formed in the light emitting
Meanwhile, the
6 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment. However, the parts shown and described in Fig. 5 are not repeatedly described in detail.
6 is a direct view, the liquid
Since the liquid
The
LED Module 623 A plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 may be mounted to include a
In particular, roughness (not shown) is formed in the light emitting
The
On the other hand, the light generated from the light emitting
In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.
100: light emitting device package 110: the body
150: wire 160: cavity
170: roughness 171: protrusion
172: groove 180: auxiliary partition
Claims (14)
First and second lead frames mounted to the body; And
And a light source unit electrically connected to the first and second frames.
At least one of the first and second lead frames includes a wire bonding region wire-bonded with the light source unit, and roughness is formed in the wire bonding region,
The light emitting device package including an auxiliary partition formed between the wire bonding region and the light source.
The roughness is a light emitting device package consisting of a plurality of protrusions.
The projecting portion of the light emitting device package is formed in at least one of the size, the projecting angle, and at least one of the separation distance.
The roughness is a light emitting device package consisting of a plurality of grooves.
The groove is a light emitting device package is formed at least one of the depth, the depression angle, and the separation distance are non-uniform.
The area of the region where the roughness is formed is greater than or equal to the area of the wire bonding region.
The auxiliary barrier rib is formed on at least one of the first and second lead frame.
The auxiliary partition wall is a light emitting device package formed in at least one region of the body.
The auxiliary barrier rib has a height lower than the height of the light source unit package.
The auxiliary partition wall includes a light emitting device package having an inclined surface formed in at least one area.
The inclined surface is a light emitting device package having a curvature.
The auxiliary partition wall is a light emitting device package including a reflective layer in at least one area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100107146A KR20120045539A (en) | 2010-10-29 | 2010-10-29 | Light emitting device package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100107146A KR20120045539A (en) | 2010-10-29 | 2010-10-29 | Light emitting device package |
Publications (1)
Publication Number | Publication Date |
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KR20120045539A true KR20120045539A (en) | 2012-05-09 |
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KR1020100107146A KR20120045539A (en) | 2010-10-29 | 2010-10-29 | Light emitting device package |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150007735A (en) * | 2013-07-12 | 2015-01-21 | 엘지이노텍 주식회사 | Light Emitting Diode Package |
KR20170132932A (en) * | 2016-05-24 | 2017-12-05 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
KR20170134816A (en) * | 2016-05-26 | 2017-12-07 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
US10008648B2 (en) | 2015-10-08 | 2018-06-26 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
US11038086B2 (en) | 2016-03-07 | 2021-06-15 | Semicon Light Co., Ltd. | Semiconductor light-emitting element and manufacturing method therefor |
-
2010
- 2010-10-29 KR KR1020100107146A patent/KR20120045539A/en not_active Application Discontinuation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150007735A (en) * | 2013-07-12 | 2015-01-21 | 엘지이노텍 주식회사 | Light Emitting Diode Package |
US10008648B2 (en) | 2015-10-08 | 2018-06-26 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
US11038086B2 (en) | 2016-03-07 | 2021-06-15 | Semicon Light Co., Ltd. | Semiconductor light-emitting element and manufacturing method therefor |
KR20170132932A (en) * | 2016-05-24 | 2017-12-05 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
KR20170134816A (en) * | 2016-05-26 | 2017-12-07 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
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