US20060263235A1 - Solder alloy and a semiconductor device using the solder alloy - Google Patents
Solder alloy and a semiconductor device using the solder alloy Download PDFInfo
- Publication number
- US20060263235A1 US20060263235A1 US11/345,516 US34551606A US2006263235A1 US 20060263235 A1 US20060263235 A1 US 20060263235A1 US 34551606 A US34551606 A US 34551606A US 2006263235 A1 US2006263235 A1 US 2006263235A1
- Authority
- US
- United States
- Prior art keywords
- solder alloy
- germanium
- antimony
- tin
- insulative substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 77
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 74
- 239000000956 alloy Substances 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000004020 conductor Substances 0.000 claims abstract description 40
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 39
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 38
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 38
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 32
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000919 ceramic Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005476 soldering Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
- C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Definitions
- the present invention relates to a solder alloy free of lead and a semiconductor device using the solder alloy, and in particular, to a solder alloy of a tin (Sn)-antimony (Sb) system.
- a solder alloy generally requires sufficient bonding performance and corrosion resistance.
- a solder alloy is used to join the back surface of a semiconductor chip to a conductor pattern disposed on a principal surface (front surface) of an insulative substrate that is a ceramic substrate having conductor patterns on the surfaces thereof.
- Such a solder alloy needs high strength against thermal fatigue, because large thermal strain develops in the soldering area.
- the back surface of the semiconductor chip joins to the conductor pattern on the surface of the insulative substrate in a face-bonding way, and thermal expansion coefficients are different in a semiconductor chip and in a conductor pattern.
- the semiconductor chip generates heat in a conducting period. Therefore, the soldering portion suffers from large thermal strain.
- the conductor pattern disposed on the other principal surface (a back surface) of an insulative substrate is joined to a heat sink plate made of a metal. Since the soldering area is very wide, the solder alloy used for this joint must exhibit excellent wettability. Further, in the joining area between the heat sink plate and the conductor pattern on the back surface of the insulative substrate, large thermal strain develops caused by the difference in thermal expansion coefficients of the insulative substrate (a ceramic substrate) and the heat sink plate.
- the generated strain in the soldering area is larger than the strain that develops in the joint between the semiconductor chip and the conductor pattern on the front surface of the insulative substrate as mentioned earlier.
- solder alloy that does not contain lead (Pb) is in demand in view of environmental considerations.
- One of such known solder alloys is a tin (Sn)-antimony (Sb) alloy.
- a known solder alloy (see Japanese Unexamined Patent Application Publication No. H11-58066, for example) contains tin (Sn) as a principal component, and antimony (Sb) not more than 3.0 wt %, silver (Ag) not more than 3.5 wt %, germanium (Ge) not more than 0.1 wt %, and further, copper not more than 1.0 wt % or nickel not more than 1.0 wt % or the both elements.
- Another known solder alloy contains germanium (Ge) in the range of 0.01 to 10 wt %, antimony in the range of 5 to 30 wt %, and tin (Sn) in the range of 65 to 90 wt %.
- a tin (Sn)-antimony (Sb) alloy having a peritectic point at 8.5 wt % of antimony (Sb) and a temperature of 245° C., is generally used with a composition containing antimony (Sb) within 8 wt %. Melting of the tin (Sn)-antimony (Sb) alloy occurs at temperatures between 232° C., the melting point of tin (Sn), and 245° C., the peritectic point. The liquid-solid coexistence region is narrow, the heat resistance is favorable, and mechanically superior performances can be obtained by increasing the antimony (Sb) content. A large content of antimony (Sb), however, results in a problem of low wettability upon soldering the alloy. Oxidation of a solder component such as tin (Sn) involves another problem of deteriorated bonding performance.
- a solder alloy according to one embodiment of the invention contains antimony in a range of 3 wt % to 5 wt %, a trace amount of germanium, and a balance of tin.
- a solder alloy according to another aspect of the invention is the solder alloy according to the first embodiment of the invention, wherein the content of the germanium is not more than 0.2 wt %.
- a semiconductor device using a solder alloy comprises an insulative substrate having conductor patterns on both surfaces thereof, a semiconductor chip joined to a conductor pattern on a front surface of the insulative substrate, and a heat sink plate joined to a conductor pattern on a back surface of the insulative substrate.
- the conductor pattern on the back surface of the insulative substrate and the heat sink plate are soldered with a solder alloy that contains antimony in a range of 3 wt % to 5 wt %, a trace amount of germanium, and the balance of tin.
- a back surface of the semiconductor chip and the conductor pattern on the front surface of the insulative substrate are soldered with a solder alloy that contains antimony in a range of 3 wt % to 5 wt %, a trace amount of germanium, and the balance of tin.
- electrodes disposed on the surfaces of the semiconductor chip and conductors for wiring are soldered with a solder alloy that contains antimony in, a range of 3 wt % to 5 wt %, a trace amount of germanium, and the balance of tin.
- the content of the germanium in the solder alloy is not more than 0.2 wt %.
- the insulative substrate is a ceramic substrate substantially composed of alumina, aluminum nitride, or silicon nitride and having copper patterns on both surfaces of the substrate, and the heat sink plate is made of copper.
- the thermal fatigue life is very short if the content of antimony (Sb) is less than 3 wt %, the amount of additive antimony (Sb) is preferably at least 3 wt %. If the content of antimony (Sb) is more than 5 wt %, wettability of the solder deteriorates. Accordingly, the amount of additive antimony (Sb) is preferably not more than 5 wt %.
- an amount of additive germanium (Ge) is preferably at least 0.01 wt % in order to achieve sufficient effect to suppress oxidation.
- the germanium content of more than 0.2 wt % on the other hand, the oxide film with the germanium (Ge) grows too thick, which adversely affects the bonding performance. Accordingly, the amount of additive germanium is appropriately not more than 0.2 wt %. Therefore, the germanium added in an amount in the range of 0.01 to 0.2 wt % provides satisfactory bonding performance as well as excellent thermal fatigue characteristic.
- a tin (Sn)-antimony (Sb) solder alloy is obtained that exhibits excellent wettability and satisfactory bonding performance.
- a semiconductor device is obtained using a solder alloy of tin (Sn)-antimony (Sb) system that exhibits excellent wettability and satisfactory bonding performance.
- the FIGURE is a sectional view of an example of a semiconductor device using a solder alloy according to an embodiment of the present invention.
- a solder alloy is prepared by melting the raw materials of tin (Sn), antimony (Sb), and germanium (Ge) in an electric furnace. Purity of each raw material is 99.99% or more. Compositions of the materials are antimony 3 to 5 wt %, germanium 0.01 to 0.2 wt %, and the balance of tin (Sn), a main component.
- an insulative substrate 10 comprises a ceramic substrate 1 and conductor patterns 2 and 3 joined on both surfaces of the, ceramic substrate.
- the ceramic substrate 1 is substantially composed of alumina, aluminum nitride, or silicon nitride.
- the conductor pattern 2 formed on the front surface of the ceramic substrate 1 is a metallic conductor pattern composing an electric circuit.
- On the back surface of the ceramic substrate 1 is provided a metallic conductor pattern 3 .
- the conductor patterns 2 and 3 are preferably formed of copper, which is inexpensive and exhibits high thermal conductivity.
- back surface electrodes of metallic films are provided on the back surface of the semiconductor chip 4 .
- the back surface electrodes are joined to the conductor pattern 2 on the front surface of the insulative substrate 10 with a solder alloy 5 having a composition as described previously.
- front surface electrodes of metallic films are provided on the front surface of the semiconductor chip 4 .
- the front surface electrodes are joined to the wiring conductor 6 with a solder alloy 7 having a composition as described previously.
- the conductor pattern 3 on the back surface of the insulative substrate 10 is joined to the metallic heat sink plate 8 with a solder alloy 9 having a composition as described previously.
- the heat sink plate 8 is a heat conductor to external cooling fins of the semiconductor package not shown in the FIGURE.
- the heat sink plate 8 is preferably made of copper, which is inexpensive and exhibits high thermal conductivity.
- solder alloy with the above-described composition for joining the conductor pattern 3 and the heat sink plate 8 , excellent cooling characteristics and satisfactory bonding performance can be achieved employing copper with low cost and high thermal conductivity.
- a solder material with a different composition from that of the solder alloy 5 , 7 , 9 may be used for joining the front surface electrodes of the semiconductor chip 4 and the wiring conductor 6 , and for joining the back surface electrodes of the semiconductor chip 4 and the conductor pattern 2 on the insulative substrate 10 .
- Solder alloys of a tin (Sn)-antimony (Sb) system were prepared in the compositions of antimony (Sb): 5.0 wt %, germanium (Ge): four steps of contents in the range of 0.01 to 0.2 wt %, and the balance of tin (Sn).
- Germanium content was 0.01 wt % in Example 1, 0.05 wt % in Example 2, 0.1 wt % in Example 3, and 0.2 wt % in Example 4.
- Solder alloys of tin (Sn)-antimony (Sb) system were prepared in the compositions of antimony (Sb): 3.0 wt %, germanium (Ge): four steps of contents in the range of 0.01 to 0.2 wt %, and the balance of tin (Sn).
- Germanium content was 0.01 wt % in Example 5, 0.05 wt % in Example 6, 0.1 wt % in Example 7, and 0.2 wt % in Example 8.
- Solder alloys not containing germanium (Ge) were prepared for comparison.
- the content of antimony (Sb) was 6.0 wt % in Comparative Example 1, 5.0 wt % in Comparative Example 2, 3.0 wt % in Comparative Example 3, 2.0 wt % in Comparative Example 4; the remainder was tin (Sn) in every Comparative Example.
- soldering flux RMA type
- the rate of wetted area and the wetting angle were measured and the generation of an oxide film on the melt was observed.
- the thermal fatigue life was also evaluated on each solder alloy.
- a conjugated body a combination of the heat sink plate 8 and the insulative substrate 10 having the conductor pattern 3 joined together with the solder alloy 9 as illustrated in the FIGURE
- Table 1 shows the following. With the increase of the added antimony (Sb), the thermal fatigue performance improves, but the increase beyond 5.0 wt % does not provide further improvement of the thermal fatigue performance. On the other hand, antimony (Sb) content less than 3.0 wt % significantly worsens the thermal fatigue performance. Addition of 0.01 to 0.2 wt % of germanium remarkably suppresses generation of an oxide film on the molten solder and at the same time improves wettability.
- germanium (Ge) is effective for both flow soldering and reflow soldering. Further, the effect of germanium is valid in both cream solder and sheet solder.
- the addition of germanium (Ge) in the amount more than 0.01 wt % made no significant difference in the wettability and the oxide film formation as increased from the germanium content of 0.01 wt %.
- the added germanium (Ge), suppressing oxidation of tin (Sn), is effective not only in the process of soldering but also in the process of preparing a solder alloy, to provide a solder alloy with essentially no oxidation film, and of high quality.
- each particle of the powder is desired to have a spherical shape.
- the powder is necessarily manufactured under a condition in which only the surface tension works, which requires suppressing the surface oxidation to the minimum possible degree. Therefore, germanium (Ge) is beneficially added to suppress the surface oxidation.
- the rate of oxidation of germanium (Ge) is stable and only a small amount of the additive holds the effect.
- germanium (Ge) in a tin (Sn)-antimony (Sb) alloy provides a solder alloy exhibiting excellent thermal fatigue performance, a solder alloy exhibiting heat resistance, a solder alloy exhibiting high wettability, and a solder alloy exhibiting satisfactory bonding performance. Because the alloy is free of lead (Pb), a solder alloy that does not cause environmental pollution is provided.
- solder alloy and a semiconductor device using the solder alloy according to the invention are beneficially applied to a variety of apparatuses having soldered parts, and are particularly suited to semiconductor devices for power conversion used in a power conversion apparatus installed in electric vehicles.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/213,923 US7816249B2 (en) | 2005-05-20 | 2008-06-26 | Method for producing a semiconductor device using a solder alloy |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005148730A JP4635715B2 (ja) | 2005-05-20 | 2005-05-20 | はんだ合金およびそれを用いた半導体装置 |
JP2005-148730 | 2005-05-20 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/213,923 Continuation-In-Part US7816249B2 (en) | 2005-05-20 | 2008-06-26 | Method for producing a semiconductor device using a solder alloy |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060263235A1 true US20060263235A1 (en) | 2006-11-23 |
Family
ID=36061073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/345,516 Abandoned US20060263235A1 (en) | 2005-05-20 | 2006-02-02 | Solder alloy and a semiconductor device using the solder alloy |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060263235A1 (zh) |
JP (1) | JP4635715B2 (zh) |
CN (3) | CN1864909B (zh) |
DE (1) | DE102006005271B4 (zh) |
GB (1) | GB2426251B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090289344A1 (en) * | 2008-05-23 | 2009-11-26 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device |
US20100328247A1 (en) * | 2008-02-22 | 2010-12-30 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Touch panel sensor |
US20140144019A1 (en) * | 2011-08-29 | 2014-05-29 | Asia Vital Components Co., Ltd. | Heat Dissipation Device and Method of Manufacturing Same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008221330A (ja) * | 2007-03-16 | 2008-09-25 | Fuji Electric Holdings Co Ltd | はんだ合金 |
CN102717201B (zh) * | 2012-07-04 | 2015-04-22 | 深圳市斯特纳新材料有限公司 | 具有耐腐蚀的高强度高温焊料 |
JP6713106B2 (ja) * | 2014-02-24 | 2020-06-24 | 株式会社弘輝 | 鉛フリーはんだ合金、はんだ材料及び接合構造体 |
CN108428682B (zh) * | 2018-04-13 | 2020-08-18 | 江西江铃集团新能源汽车有限公司 | 一种功率模组及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6179935B1 (en) * | 1997-04-16 | 2001-01-30 | Fuji Electric Co., Ltd. | Solder alloys |
US6187114B1 (en) * | 1996-10-17 | 2001-02-13 | Matsushita Electric Industrial Co. Ltd. | Solder material and electronic part using the same |
US6319461B1 (en) * | 1999-06-11 | 2001-11-20 | Nippon Sheet Glass Co., Ltd. | Lead-free solder alloy |
US20030230361A1 (en) * | 2002-06-17 | 2003-12-18 | Kabushiki Kaisha Toshiba | Lead-free solder alloy and lead-free solder paste using the same |
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JPS62230493A (ja) * | 1986-03-31 | 1987-10-09 | Taruchin Kk | はんだ合金 |
JP3269745B2 (ja) * | 1995-01-17 | 2002-04-02 | 株式会社日立製作所 | モジュール型半導体装置 |
JPH09330941A (ja) * | 1996-06-13 | 1997-12-22 | Toshiba Corp | 高熱伝導ペースト半田および半導体デバイス |
US6033488A (en) * | 1996-11-05 | 2000-03-07 | Samsung Electronics Co., Ltd. | Solder alloy |
KR19980068127A (ko) * | 1997-02-15 | 1998-10-15 | 김광호 | 납땜용 무연 합금 |
JP3353662B2 (ja) * | 1997-08-07 | 2002-12-03 | 富士電機株式会社 | はんだ合金 |
JP2002232022A (ja) * | 2001-01-31 | 2002-08-16 | Aisin Seiki Co Ltd | 熱電モジュール及びその製造方法 |
JP2002321084A (ja) * | 2001-04-26 | 2002-11-05 | Sumitomo Metal Mining Co Ltd | 電子部品接合用はんだ合金 |
US20030021718A1 (en) * | 2001-06-28 | 2003-01-30 | Osamu Munekata | Lead-free solder alloy |
JP2003094194A (ja) * | 2001-07-16 | 2003-04-02 | Uchihashi Estec Co Ltd | はんだ材及び電子部品における部材の固定方法 |
US20030178719A1 (en) * | 2002-03-22 | 2003-09-25 | Combs Edward G. | Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package |
CN1230567C (zh) * | 2003-07-02 | 2005-12-07 | 中国科学院金属研究所 | 一种抗液态表面氧化的工业纯锡及其应用 |
-
2005
- 2005-05-20 JP JP2005148730A patent/JP4635715B2/ja active Active
-
2006
- 2006-01-30 GB GB0601776A patent/GB2426251B/en not_active Expired - Fee Related
- 2006-02-02 US US11/345,516 patent/US20060263235A1/en not_active Abandoned
- 2006-02-06 DE DE102006005271A patent/DE102006005271B4/de active Active
- 2006-02-28 CN CN2006100515427A patent/CN1864909B/zh active Active
- 2006-02-28 CN CN2010102407673A patent/CN101905388B/zh active Active
- 2006-02-28 CN CN201210102888.0A patent/CN102637662B/zh active Active
Patent Citations (4)
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US6187114B1 (en) * | 1996-10-17 | 2001-02-13 | Matsushita Electric Industrial Co. Ltd. | Solder material and electronic part using the same |
US6179935B1 (en) * | 1997-04-16 | 2001-01-30 | Fuji Electric Co., Ltd. | Solder alloys |
US6319461B1 (en) * | 1999-06-11 | 2001-11-20 | Nippon Sheet Glass Co., Ltd. | Lead-free solder alloy |
US20030230361A1 (en) * | 2002-06-17 | 2003-12-18 | Kabushiki Kaisha Toshiba | Lead-free solder alloy and lead-free solder paste using the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100328247A1 (en) * | 2008-02-22 | 2010-12-30 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Touch panel sensor |
US20090289344A1 (en) * | 2008-05-23 | 2009-11-26 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device |
US20140144019A1 (en) * | 2011-08-29 | 2014-05-29 | Asia Vital Components Co., Ltd. | Heat Dissipation Device and Method of Manufacturing Same |
Also Published As
Publication number | Publication date |
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DE102006005271B4 (de) | 2012-12-06 |
CN102637662B (zh) | 2014-09-24 |
CN102637662A (zh) | 2012-08-15 |
GB2426251B (en) | 2007-10-10 |
GB0601776D0 (en) | 2006-03-08 |
CN1864909A (zh) | 2006-11-22 |
JP4635715B2 (ja) | 2011-02-23 |
DE102006005271A1 (de) | 2006-11-23 |
CN101905388B (zh) | 2012-05-30 |
JP2006320955A (ja) | 2006-11-30 |
GB2426251A (en) | 2006-11-22 |
CN101905388A (zh) | 2010-12-08 |
CN1864909B (zh) | 2012-05-30 |
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