US20060231802A1 - Electroconductive thick film composition, electrode, and solar cell formed therefrom - Google Patents

Electroconductive thick film composition, electrode, and solar cell formed therefrom Download PDF

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US20060231802A1
US20060231802A1 US11/106,261 US10626105A US2006231802A1 US 20060231802 A1 US20060231802 A1 US 20060231802A1 US 10626105 A US10626105 A US 10626105A US 2006231802 A1 US2006231802 A1 US 2006231802A1
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electrode
silver
paste
solar cell
electroconductive
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English (en)
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Takuya Konno
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EIDP Inc
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Individual
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Priority to US11/106,261 priority Critical patent/US20060231802A1/en
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Assigned to DUPONT KABUSHIKI KAISHA (DKK) reassignment DUPONT KABUSHIKI KAISHA (DKK) ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KONNO, TAKUYA
Assigned to E. I. DU PONT DE NEMOURS AND COMPANY reassignment E. I. DU PONT DE NEMOURS AND COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DUPONT KABUSHIKI KAISHA (DKK)
Priority to AU2006201554A priority patent/AU2006201554A1/en
Priority to DE602006002767T priority patent/DE602006002767D1/de
Priority to EP06252075A priority patent/EP1713093B1/de
Priority to JP2006112245A priority patent/JP2006295197A/ja
Priority to TW095113527A priority patent/TWI339400B/zh
Priority to KR1020060034124A priority patent/KR100798255B1/ko
Priority to CN2006100748107A priority patent/CN1877748B/zh
Publication of US20060231802A1 publication Critical patent/US20060231802A1/en
Priority to US12/037,306 priority patent/US7718093B2/en
Priority to US12/651,136 priority patent/US20100227433A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention is directed to a silicon semiconductor device.
  • it pertains to an electroconductive composition used in the formation of a thick film electrode of a solar cell.
  • the present invention is further directed to a silver electroconductive thick film composition (paste) for a solar cell.
  • the present invention can be applied to a broad range of semiconductor devices, although it is especially effective in light-receiving elements such as photodiodes and solar cells.
  • the background of the invention is described below with reference to solar cells as a specific example of the prior art.
  • a conventional solar cell structure with a p-type base has a negative electrode that is typically on the front-side or sun side of the cell and a positive electrode on the backside. It is well-known that radiation of an appropriate wavelength falling on a p-n junction of a semiconductor body serves as a source of external energy to generate hole-electron pairs in that body. Because of the potential difference which exists at a p-n junction, holes and electrons move across the junction in opposite directions and thereby give rise to flow of an electric current that is capable of delivering power to an external circuit. Most solar cells are in the form of a silicon wafer that has been metallized, i.e., provided with metal contacts that are electrically conductive.
  • Electrodes are made by using a method such as screen printing to form a metal paste.
  • FIG. 1 shows a p-type silicon substrate, 10 .
  • an n-type diffusion layer, 20 of the reverse conductivity type is formed by the thermal diffusion of phosphorus (P) or the like.
  • Phosphorus oxychloride (POCl 3 ) is commonly used as the phosphorus diffusion source.
  • the diffusion layer, 20 is formed over the entire surface of the silicon substrate, 10 .
  • This diffusion layer has a sheet resistivity on the order of several tens of ohms per square ( ⁇ / ⁇ ), and a thickness of about 0.3 to 0.5 ⁇ m.
  • the diffusion layer, 20 After protecting one surface of this diffusion layer with a resist or the like, as shown in FIG. 1 ( c ), the diffusion layer, 20 , is removed from most surfaces by etching so that it remains only on one main surface. The resist is then removed using an organic solvent or the like.
  • a silicon nitride film, 30 is formed as an anti-reflection coating on the n-type diffusion layer, 20 , to a thickness of about 700 to 900 ⁇ in the manner shown in FIG. 1 ( d ) by a process such as plasma chemical vapor deposition (CVD).
  • CVD plasma chemical vapor deposition
  • a silver paste, 500 for the front electrode is screen printed then dried over the silicon nitride film, 30 .
  • a backside silver or silver/aluminum paste, 70 , and an aluminum paste, 60 are then screen printed and successively dried on the backside of the substrate. Firing is then typically carried out in an infrared furnace at a temperature range of approximately 700 to 975° C. for a period of from several minutes to several tens of minutes.
  • aluminum diffuses from the aluminum paste into the silicon substrate, 10 , as a dopant during firing, forming a p+ layer, 40 , containing a high concentration of aluminum dopant.
  • This layer is generally called the back surface field (BSF) layer, and helps to improve the energy conversion efficiency of the solar cell.
  • BSF back surface field
  • the aluminum paste is transformed by firing from a dried state, 60 , to an aluminum back electrode, 61 .
  • the backside silver or silver/aluminum paste, 70 is fired at the same time, becoming a silver or silver/aluminum back electrode, 71 .
  • the aluminum electrode accounts for most areas of the back electrode, owing in part to the need to form a p+ layer, 40 . Because soldering to an aluminum electrode is impossible, a silver back electrode is formed over portions of the back side as an electrode for interconnecting solar cells by means of copper ribbon or the like.
  • the front electrode-forming silver paste, 500 sinters and penetrates through the silicon nitride film, 30 , during firing, and is thereby able to electrically contact the n-type layer, 20 .
  • This type of process is generally called “fire through.” This fired through state is apparent in layer 501 of FIG. 1 ( f ).
  • the backside electrodes there are two prior art methods which are typically used to form the Aluminum and silver electrodes (or Ag/Al electrode).
  • the first method is disclosed in Japanese Kokai Patent Application Nos. 2001-127317 and 2004-146521 wherein a Ag paste is printed and dried, an Al paste is printed and dried, and both pastes are baked (to form the silver and Al electrodes).
  • the second method is a process in which the formation sequence of the Al electrode and the Ag electrode of the first method is reversed wherein the paste for the Al electrode is printed and dried first, the Ag paste is printed and dried second, and both pastes are baked.
  • Japanese Kokai Patent Application No. 2003-223813 considers the thermal contraction of aluminum.
  • the thermal contraction of Al is improved by including a material with a low thermal expansion coefficient, such as SiO 2 in the paste composition.
  • SiO 2 a material with a low thermal expansion coefficient
  • the solderability when SiO 2 is used, there is a possibility that the solderability will be lowered, and the suppression of the thermal contraction and the solderability have a trade-off relationship.
  • the material of the second electrode used as an electrode for connection requires adhesive strength, as well as solderability, it must be designed so that glass particles used as a binder are necessarily included in the material to improve the adhesion with the Si substrate.
  • the present invention solves the above-mentioned problems by providing an electroconductive paste that essentially does not generate cracks in the superposed part, even by simultaneously baking an aluminum electrode and a silver electrode of the back face.
  • This invention can form an electrode with a sufficient adhesive strength while still maintaining sufficient solar cell characteristics.
  • the electroconductive thick film paste of the present invention is a silver electroconductive paste, which includes silver particles, glass particles, and an organic vehicle, and is used in an electrode for connecting a back face terminal on the silicon substrate of a solar cell.
  • This paste is characterized by the fact that the average particle diameter of said silver particles is 3.0-15.0 ⁇ m.
  • the present invention is further directed to an electrode formed from the composition, as detailed above, and a solar cell comprising said electrode.
  • FIG. 1 is a process flow diagram illustrating the fabrication of a semiconductor device.
  • FIGS. 2 ( a )-( d ) explain the manufacturing processes for manufacturing a solar cell using the electroconductive paste of the present invention. Reference numerals shown in FIG. 2 are explained below.
  • the conductive thick film composition (paste) of the present invention provides the ability to form an electrode from said paste wherein the electrode essentially does not generate cracks in the overlapped part (back side Al, Ag electrodes), even when simultaneously baking an aluminum electrode and a silver electrode installed on the back face of a solar cell.
  • the present invention is a conductive thick film composition, in particular a silver electroconductive paste, which includes silver particles, glass particles, and an organic vehicle, and is used in an electrode for connecting a back face terminal on the silicon substrate of a solar cell. It is characterized by the fact that the average particle diameter of said silver particles is 3.0-15.0 ⁇ m.
  • the silver particles are included at 40-93 wt % based on the total weight of the paste
  • the glass particles are included at 2-10 wt % based on the total weight of the paste
  • the organic vehicle is included at 5-50 wt % based on the total weight of the paste.
  • the glass powder included in the silver electroconductive paste to have a softening point of 450-550° C.
  • a silver electroconductive paste is used for a second electrode, which suppresses the generation of cracks in the superposed part of the first electrode and second electrode, with the second electrode having a sufficient adhesive strength and does not degrade the characteristics of a solar cell.
  • the present invention pertains to a silver electroconductive paste that includes an electroconductive metal, especially silver particles, a binder, especially glass particles, and an organic vehicle, and is used in an electrode for connecting a back face terminal on the silicon substrate of a solar cell.
  • the electroconductive paste of the present invention is used in the above-mentioned second method, that is, the method that prints and dries an electroconductive paste for the Al electrode, prints and dries an electroconductive paste for the silver electrode, and bakes them, in the formation of back electrodes of a solar cell.
  • silver (Ag) particles can be mentioned and are most preferable.
  • the silver particles are preferably the flake form or powder form.
  • the particle diameter of the silver particles is not particularly limited in terms of technical effects; however, since the particle diameter has an influence on the sintering characteristic of the silver (for example, the silver particles with a large particle diameter are sintered at a speed slower than that of the silver particles with a small particle diameter), it is preferable to have a specific diameter for the purpose of the present invention. Furthermore, it is also necessary for the silver particles to have a particle diameter suitable for a method for spreading the electroconductive paste (for example, screen printing).
  • the average particle diameter of the silver particles is 3.0-15.0 ⁇ m, preferably 5.0-11.0 ⁇ m.
  • the electroconductive paste is appropriately spread, the melting contraction behavior of the aluminum paste for the first electrode of the back face, and the sintering behavior of the silver electroconductive paste for the second electrode are matched, and the generation of cracks in the superposed part of two electrodes can be suppressed.
  • the silver electroconductive paste exhibits a steep sintering behavior, and cracks are apt to be generated between the two electrodes due to the mismatch of the sintering speed with the aluminum paste. Also, if the particle diameter of the silver particles is greater than the above-mentioned range, since the sintering is not sufficiently advanced, the electrical conductivity is lowered, and the strength of the electrode film is decreased.
  • the silver it is preferable for the silver to have a high purity (99+%); however, a substance with a low purity can also be used in response to the electrical demand of the electrode pattern.
  • the electroconductive metal is most preferably the silver particles as mentioned above; however, an electroconductive metal other than silver can also be used.
  • Metals such as Cu, Au, Ag, Pd, and Pd may be useful. Additionally, alloys and mixtures of the preceding metals are also useful in the present invention. For example, Cu, Au, Ag-Pd, Pt-Au, etc., can be used. It is understood that the preceding discussion regarding the use of silver particles is not limiting and applies to the use of the other metals, alloys and mixtures detailed above.
  • the content of the electroconductive metal is not particularly limited as long as it is an amount that can achieve the objective of the present invention; however, the silver particles are preferably present at 40-93 wt % based on the weight of the electroconductive paste. Furthermore, aluminum may be added to the composition to enhance desired properties.
  • the electroconductive paste of the present invention prefferably includes an inorganic binder.
  • the inorganic binder usable in the present invention is a glass frit with a softening point of 450-550° C. so that the electroconductive paste can be baked at 600-800° C., appropriately sintered and moistened, and appropriately adhered to a silicon substrate. If the softening point is lower than 450° C., the sintering is excessive, and the effects of the present invention sometimes cannot be sufficiently obtained. On the other hand, if the softening point is higher than 550° C., since a sufficient melt flow is not caused during the baking, a sufficient adhesive strength is not exerted, and the liquid-phase sintering of the silver sometimes cannot be promoted.
  • the “softening point” is that obtained by the fiber elongation method of ASTM C338-57.
  • any glass frit used in electroconductive pastes for electronic material can be applied.
  • lead borosilicate glass, etc. can be appropriately used.
  • Lead silicate glass and lead borosilicate glass are excellent materials in the present invention in terms of both the softening point range and the glass fusibility.
  • a leadless glass such as zinc borosilicate can also be used.
  • the content of the glass frit as the inorganic binder is not particularly limited as long as it is an amount that can achieve the objective of the present invention; however, the content is 2.0-10.0 wt %, preferably 3.0-6.0 wt %, based on the total weight of the electroconductive paste.
  • the amount of the inorganic binder is smaller than 2.0 wt %, the adhesive strength is sometimes insufficient, and if the amount of the inorganic binder is more than 10.0 wt %, soldering as a postprocess is sometimes hindered by glass floating, etc.
  • the electroconductive paste of the present invention includes an organic vehicle.
  • an optional inactive liquid can be used as the organic vehicle.
  • organic liquids for example, alcohols; esters of alcohols (such as an acetate or propionate); starch (such as pine oil and terpineol); various solutions such as a pine oil solution or ethylene glycol monobutyl ether monoacetate solution of a resin (polymethacrylate, etc.) or ethylcellulose, or a terpineol solution of ethylcellulose can be mentioned.
  • the content of the organic vehicle is 5-50 wt % based on the total weight of the electroconductive paste.
  • a thickener and/or a stabilizer and/or other general additives may or may not be used.
  • a tackifier thickener
  • stabilizer stabilizer
  • a dispersant viscosity adjustor, etc.
  • the amount of additives is used determined in accordance with the characteristics of the electroconductive paste that is finally obtained. The amount of additives can be appropriately determined by the manufacturer concerned. Also, several kinds of additives may be used.
  • the electroconductive paste of the present invention it is preferable for the electroconductive paste of the present invention to have a viscosity in a prescribed range.
  • a tackifier thickener
  • the tackifier for example, the above-mentioned substances can be mentioned.
  • the amount of tackifier, etc., being added varies in accordance with the viscosity of the final electroconductive paste; however, it can be appropriately determined by the manufacturer concerned.
  • the electroconductive paste of the present invention is conveniently manufactured by mixing each of the above-mentioned components by a three-roll kneader.
  • the electroconductive paste of the present invention is preferably spread on the desired part of the back face of a solar cell by screen printing; in spreading by such a method, it is preferable to have a viscosity in a prescribed range.
  • the viscosity of the electroconductive paste of the present invention is preferably 50-300 PaS when it is measured at 10 rpm and 25° C. by a utility cup using a Brookfield HBT viscometer and #14 spindle.
  • the electroconductive paste of the present invention is used for the second electrode formed in a partially superposed state with the first electrode formed from an electroconductive paste mainly composed of aluminum.
  • the electroconductive paste of the present invention is formed by printing and drying an electroconductive paste for the Al electrode, printing and drying an electroconductive paste for the silver electrode, and simultaneously baking them, and is used for an electrode to connect an electrode on the back face.
  • a Si substrate 102 is prepared.
  • electrodes for example, electrodes mainly composed of Ag
  • aluminum pastes used as a back face electrode for a solar cell are spread by screen printing, etc., then dried ( FIG. 2 ( b )).
  • the electroconductive paste of the present invention is then spread in a partially overlapped state with the aluminum paste, printed and dried in advance, and dried ( FIG. 2 ( c )).
  • each paste is preferably 180° C. or lower.
  • the aluminum paste preferably has a dried film thickness of 40-60 ⁇ m, and the thickness of the silver electroconductive paste of the present invention is preferably 20-30 ⁇ m.
  • the overlapped part of the aluminum paste and the silver electroconductive paste is preferably about 0.5-2.5 mm.
  • the substrate obtained is baked at a temperature of 600-900° C. for about 2-15, for instance, so that the desired solar cell is obtained ( FIG. 2 ( d )).
  • the solar cell obtained using the electroconductive paste of the present invention has electrodes 104 on the light-receiving face (surface) of the substrate (for example, Si substrate) 102 , Al electrodes (first electrodes) 110 mainly composed of Al and silver electrodes (second electrodes) 112 mainly composed of Ag, on the back face.
  • the substrate for example, Si substrate
  • Al electrodes (first electrodes) 110 mainly composed of Al
  • silver electrodes (second electrodes) 112 mainly composed of Ag
  • the present invention is explained in further detail by an application example.
  • a manufacturing example of the silver electroconductive paste of the present invention and an example in which the silver electroconductive paste is used as an electrode material for the back face of a Si substrate in manufacturing a solar cell are explained.
  • a viscosity adjustor 1.7 wt % of a viscosity adjustor and 22.5 wt % of an organic vehicle (terpineol solution of ethylcellulose (containing 20 parts ethylcellulose)) were added to a mixture of 4.8 wt % glass frit (Si-B-Pb-O system) and 71.0 wt % silver powder with an average particle diameter of 8.5 ⁇ m.
  • This mixture was premixed by a universal mixer and kneaded by a three-roll kneader, so that a silver electroconductive paste was obtained.
  • the particle diameter, content, and characteristics of the materials used are shown in FIG. 2 .
  • a solar cell was formed in the following sequence.
  • an aluminum paste PV333 for the back face electrode of a solar cell (commercially available from E. I. du Pont de Nemours and Company) was screen-printed at a dried film thickness of 40-60 ⁇ m and dried at a temperature of 180° C. or lower. After drying the silver electroconductive paste of the present invention, a film thickness of 20-30 ⁇ m was obtained; the silver paste was screen-printed so that it overlapped the above-mentioned aluminum paste by a width of 1 mm, and dried.
  • the overlapped part of the back face electrode of the baked product obtained was enlarged at a magnification of 100 times and observed by a microscope (digital microscope); the existence of cracks was observed with the naked eye.
  • the adhesive strength of the second electrode was measured. As its measuring method, the adhesive strength was measured at a tensile speed of 2 inches (5.08 cm) per min using an “Instron” tensile tester with a peeling-off angle of 90°.
  • Electroconductive pastes with mixture compositions and characteristics as shown in Table I were used instead of the electroconductive paste of the present invention explained in Application Example 1 ; and solar cells were manufactured by a sequence similar to that shown in Application Example 1. Also, Comparative Example 1 corresponds to a conventional electroconductive paste.
  • Example 2 Silver Average ⁇ m 8.5 2.5 8.5 8.5 particles particle diameter Content wt % 71.0 71.0 71.0 71.0 Glass frit Softening ° C. 500.0 500.0 500.0 600.0 point Content wt % 4.8 2.5 1.0 4.8 Organic vehicle wt % 22.5 25.0 26.5 22.5 Viscosity adjuster wt % 1.7 1.5 1.5 1.7
  • Example 3 Generation OK NG OK OK of cracks 1) Adhesive 2.2 2.7 0.7 0.3 strength (N) Charac- OK NG OK OK teristics of solar cell 2) 1) As for the generation of cracks, when cracks were essentially not generated (no cracks were generated, or even if few cracks were generated, they had no influence on the characteristics), it was decided as OK; when cracks were generated, it was decided as NG. 2) The characteristics required for solar cells including the conversion coefficient were decided. When sufficient practical characteristics were obtained, it was decided as OK, and when impractical characteristics were obtained, it was decided as NG.
  • the electroconductive paste of the present invention can be utilized in the manufacture of a solar cell.

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DE602006002767T DE602006002767D1 (de) 2005-04-14 2006-04-13 Ruckseite-Elektrode für Solarzelle und Herstellungsverfahren dazu
EP06252075A EP1713093B1 (de) 2005-04-14 2006-04-13 Ruckseite-Elektrode für Solarzelle und Herstellungsverfahren dazu
CN2006100748107A CN1877748B (zh) 2005-04-14 2006-04-14 导电的厚膜组合物、电极和由其形成的太阳能电池
JP2006112245A JP2006295197A (ja) 2005-04-14 2006-04-14 導電性厚膜組成物、それから形成される電極および太陽電池
KR1020060034124A KR100798255B1 (ko) 2005-04-14 2006-04-14 전기전도성 후막 조성물, 이로부터 형성된 전극 및 태양전지
TW095113527A TWI339400B (en) 2005-04-14 2006-04-14 Electroconductive thick film composition, electrode, and solar cell formed therefrom
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DE602006002767D1 (de) 2008-10-30
CN1877748A (zh) 2006-12-13
US7718093B2 (en) 2010-05-18
EP1713093A3 (de) 2007-03-07
KR20060108550A (ko) 2006-10-18
CN1877748B (zh) 2012-02-08
AU2006201554A1 (en) 2006-11-02
EP1713093B1 (de) 2008-09-17
EP1713093A2 (de) 2006-10-18
TW200641915A (en) 2006-12-01
JP2006295197A (ja) 2006-10-26
US20100227433A1 (en) 2010-09-09
US20080178930A1 (en) 2008-07-31
KR100798255B1 (ko) 2008-01-24
TWI339400B (en) 2011-03-21

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