US20060187984A1 - Semiconductor light emitting device, method of manufacturing same, and optical module - Google Patents

Semiconductor light emitting device, method of manufacturing same, and optical module Download PDF

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US20060187984A1
US20060187984A1 US11/276,088 US27608806A US2006187984A1 US 20060187984 A1 US20060187984 A1 US 20060187984A1 US 27608806 A US27608806 A US 27608806A US 2006187984 A1 US2006187984 A1 US 2006187984A1
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active layer
layer
light emitting
less
emitting device
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Yasuo Sato
Jugo Mitomo
Mikihiro Yokozeki
Tomonori Hino
Hironobu Narui
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Sony Corp
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Sony Corp
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Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NARUI, HIRONOBU, SATO, YASUO
Publication of US20060187984A1 publication Critical patent/US20060187984A1/en
Priority to US12/540,609 priority Critical patent/US8030109B2/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers

Definitions

  • the present invention contains subject matter related to Japanese Patent Application JP 2005-042771 filed in the Japanese Patent Office on Feb. 18, 2005, the entire contents of which being incorporated herein by reference.
  • the present invention relates to a semiconductor light emitting device in which an active layer includes a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N), a method of manufacturing the semiconductor light emitting device, and an optical module.
  • an active layer includes a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N)
  • Ga gallium
  • As arsenic
  • N nitrogen
  • fabricating a light emitting device using GaNAs materials on a GaAs substrate has been proposed (for example, refer to Japanese Unexamined Patent Application Publication No. H06-37355).
  • the GaAs substrate is used as above, the substrate is not expensive, and the temperature characteristics are superior (for example, refer to “Japan Journal of Applied Physics,” 2000, 6A, p. 39) and therefore a cooling system is not necessary, leading to reductions in cost.
  • the present invention it is desirable to provide a semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using it.
  • a semiconductor light emitting device in which an active layer has a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N), wherein impurity concentration of hydrogen (H) in the active layer is 3 ⁇ 10 19 cm ⁇ 3 or less, and the impurity concentration of aluminum (Al) in the active layer is 1 ⁇ 10 18 cm ⁇ 3 or less, or the impurity concentration of hydrogen in the active layer is 1.5 ⁇ 10 18 cm ⁇ 3 , or less, and the impurity concentration of aluminum in the active layer is 4 ⁇ 10 18 cm ⁇ 3 or less.
  • impurity concentration of hydrogen (H) in the active layer is 3 ⁇ 10 19 cm ⁇ 3 or less
  • the impurity concentration of aluminum (Al) in the active layer is 1 ⁇ 10 18 cm ⁇ 3 or less
  • the impurity concentration of hydrogen in the active layer is 1.5 ⁇ 10 18 cm ⁇ 3 , or less
  • the impurity concentration of aluminum in the active layer is 4 ⁇ 10 18 cm ⁇ 3 or
  • an active layer has a well layer made of a compound semiconductor containing at least gallium, arsenic, and nitrogen, wherein an organic nitrogen compound is used as a raw material of nitrogen when forming the active layer, the flow rate of the organic nitrogen compound is 135 cm 3 /min or less, and thereby the impurity concentration of hydrogen in the active layer becomes 3 ⁇ 10 19 cm ⁇ 3 or less.
  • an optical module including a semiconductor light emitting device, wherein in the semiconductor light emitting device, an active layer has a well layer made of a compound semiconductor containing at least gallium, arsenic, and nitrogen, the impurity concentration of hydrogen in the active layer is 3 ⁇ 10 19 cm ⁇ 1 or less, and the impurity concentration of aluminum (Al) in the active layer is 1 ⁇ 10 18 cm ⁇ 3 or less, or the impurity concentration of hydrogen in the active layer is 1.5 ⁇ 10 18 cm ⁇ 3 or less, and the impurity concentration of aluminum in the active layer is 4 ⁇ 10 18 cm ⁇ 3 or less.
  • the impurity concentration of hydrogen in the active layer is 3 ⁇ 10 19 cm ⁇ 3 or less, and the impurity concentration of aluminum in the active layer is 1 ⁇ 10 18 cm ⁇ 3 or less, or the impurity concentration of hydrogen in the active layer is 1.5 ⁇ 10 18 cm ⁇ 3 or less, and the impurity concentration of aluminum in the active layer is 4 ⁇ 10 18 cm ⁇ 3 or less. Therefore, the life can be prolonged so that, for example, the elapsed time that the operating current is increased up to 50% or more of the initial operating current is 1000 hours or more.
  • the thickness per one layer of the barrier layer in the active layer is in the range from 1 nm to 8 nm, the life can be further prolonged.
  • an organic nitrogen compound is used as a raw material of nitrogen when forming the active layer, the flow rate of the organic nitrogen compound is 135 cm 3 /min or less, and thereby the impurity concentration of hydrogen in the active layer can be 3 ⁇ 10 19 cm ⁇ 3 or less.
  • FIG. 1 is a cross section showing a structure of a laser diode according to an embodiment of the present invention
  • FIG. 2 is a characteristics diagram showing a relation between the hydrogen concentration in an active layer shown in FIG. 1 and the life;
  • FIG. 3 is a characteristics diagram showing a relation between the aluminum concentration in the active layer shown in FIG. 1 and the life;
  • FIG. 4 is a characteristics diagram showing a relation between the hydrogen concentration in the active layer shown in FIG. 1 and the emission intensity;
  • FIG. 5 is a characteristics diagram showing a relation between the thickness of a barrier layer shown in FIG. 1 and the life;
  • FIG. 6 is a characteristics diagram showing a relation between the flow rate of dimethyl hydrazine when a well layer shown in FIG. 1 is formed and the hydrogen concentration in the well layer;
  • FIG. 7 is a characteristics diagram showing a relation between the growth temperature when forming the active layer shown in FIG. 1 and the hydrogen concentration in the active layer;
  • FIG. 8 is a view showing a model of a structure of an optical module including the laser diode shown in FIG. 1 ;
  • FIG. 9 is a cross section showing a structure of another laser diode of the present invention.
  • FIG. 1 shows a cross sectional structure of a laser diode 10 , which is a semiconductor light emitting device according to an embodiment of the present invention.
  • the laser diode 10 is a long-wavelength laser with an oscillation wavelength used for communication and the like of 1.1 ⁇ m to 1.5 ⁇ m.
  • the laser diode 10 has a structure in which on the obverse side of a substrate 11 , a first cladding layer 12 , a first guide layer 13 , an active layer 14 , a second guide layer 15 , a second cladding layer 16 , an etching stop layer 17 , a third cladding layer 18 , and a contact layer 19 are layered sequentially from the substrate 11 side.
  • the etching stop layer 17 , the third cladding layer 18 , and the contact layer 19 are made into a narrow stripe-shaped ridge, and an insulating layer 20 made of silicon dioxide (SiO 2 ) or the like is formed on the both sides thereof.
  • the substrate 11 has a thickness in the lamination direction (hereinafter simply referred to as thickness) of, for example, about 450 ⁇ m, and is made of n-type GaAs doped with an n-type impurity such as silicon (Si) and selenium (Se).
  • the first cladding layer 12 is, for example, about 2 ⁇ m thick, and is made of an n-type Al 0.47 Ga 0.53 As mixed crystal doped with the n-type impurity such as silicon and selenium.
  • the first guide layer 13 is, for example, about 100 nm thick, and is made of undoped GaAs.
  • the active layer 14 has a multiquantum well (MQW) structure, in which a barrier layer 14 B is formed between well layers 14 A. While in FIG. 1 , the case of double quantum well structure in which the number of the well layers 14 A is two layers is shown, three or more layers may be layered. Further, though not shown, the active layer 14 may be constructed by a single quantum well (SQW) structure in which only the well layer 14 A exists.
  • MQW multiquantum well
  • SQW single quantum well
  • the well layer 14 A functions as a light emitting layer.
  • the region corresponding to the contact layer 19 that is, the region corresponding to the ridge in which the contact layer 19 is provided becomes a light emitting section.
  • the well layer 14 A is made of, for example, a compound semiconductor containing at least gallium of a Group 13 element in the long period periodic table, and arsenic and nitrogen of Group 15 elements in the long period periodic table.
  • the compound semiconductor may further contain indium (In) of a Group 13 element.
  • the compound semiconductor may furthermore include antimony (Sb) of a Group 15 element.
  • the well layer 14 A is preferably made of, for example, a Ga 1-x In x N y As 1-y-z Sb z mixed crystal (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 1, and 0 ⁇ y+z ⁇ 1).
  • the composition of the well layer 14 A is adjusted according to the target light emitting wavelength.
  • the barrier layer 14 B is made of, for example, GaAs or a compound semiconductor containing GaAs and nitrogen. That is, the barrier layer 14 B is made of, for example, a GaN v As 1-v , mixed crystal (0 ⁇ v ⁇ 1).
  • the impurity concentration of hydrogen in the active layer 14 is 3 ⁇ 10 19 cm ⁇ 3 or less, and the impurity concentration of aluminum in the active layer 14 is 1 ⁇ 10 18 cm ⁇ 3 or less. Otherwise, the impurity concentration of hydrogen in the active layer 14 is 1.5 ⁇ 10 18 cm ⁇ 3 or less, and the impurity concentration of aluminum in the active layer 14 is 4 ⁇ 10 18 cm ⁇ 3 or less.
  • Hydrogen and aluminum are easily taken in as impurity by decomposition of raw materials or the like in manufacturing steps. If the impurity concentrations thereof are high, crystallinity is lowered leading to lowered characteristics, and the life is shortened.
  • FIG. 2 shows a relation between the hydrogen concentration in the active layer 14 and the life.
  • FIG. 3 shows a relation between the aluminum concentration in the active layer 14 and the life.
  • FIGS. 2 and 3 are characteristics diagrams in the case of manufacturing semiconductor light emitting devices having the structure shown in FIG. 1 under various manufacturing conditions by MOCVD (Metal Organic Chemical Vapor Deposition) method.
  • the hydrogen concentration was changed by changing the flow rate of an organic nitrogen compound as a nitrogen source when the active layer 14 was formed.
  • the aluminum concentration was changed by performing a step of removing aluminum before the active layer 14 was formed.
  • FIGS. 2 and 3 the cases indicated by black circles were provided with the step of removing aluminum, and the cases indicated by black squares were not provided with the step of removing aluminum.
  • the hydrogen concentration and the aluminum concentration were measured by SIMS (Secondary Ion Mass Spectrometry) method.
  • SIMS Secondary Ion Mass Spectrometry
  • APC Automatic Power control
  • the life tends to become longer as the hydrogen concentration becomes lower for the cases indicated by black circles and black squares, respectively. However, for the cases indicated by black squares, the life was shorter than of the cases indicated by black circles even when the hydrogen concentration was low. Further, as shown in FIG. 3 , for the cases indicated by black circles provided with the step of removing aluminum, the aluminum concentration was low. However, for the cases indicated by black squares not provided with the step of removing aluminum, the aluminum concentration was high, and the life was short. That is, in view of both FIG. 2 and FIG. 3 , it is found that in order to obtain a life of 1000 hours or more, the hydrogen concentration should be 3 ⁇ 10 19 cm ⁇ 3 or less, and the aluminum concentration should be 1 ⁇ 10 18 cm ⁇ 3 or less.
  • the life of 1000 hours or more could be obtained. That is, it is found that when the hydrogen concentration is extremely low to the degree of 1.5 ⁇ 10 18 cm ⁇ 3 or less, the aluminum concentration is not necessarily 1 ⁇ 10 18 cm ⁇ 3 or less but may be about 4 ⁇ 10 18 cm ⁇ 3 or less.
  • FIG. 4 shows a relation between the hydrogen concentration of the active layer 14 in the semiconductor light emitting device shown in FIGS. 2 and 3 and the emission intensity.
  • the emission intensity tends to be lowered as the hydrogen concentration becomes lowered. That is, it is found that if the hydrogen concentration is simply lowered, crystallinity is improved, the emission intensity is increased, and the life is prolonged. It is found that there is a specific relation between the hydrogen concentration, the aluminum concentration and the life.
  • the thickness of the well layer 14 A is adjusted according to the target light emitting wavelength, and for example, is preferably 10 nm or more.
  • the thickness of the well layer 14 A is increased, the quantum confinement effect in the well layer 14 A is decreased and the wavelength becomes long, and therefore the nitrogen content necessary for long wavelength can be decreased.
  • the flow rate of the organic nitrogen compound as a raw material of nitrogen can be reduced, and of the hydrogen generated by the decomposition thereof, the amount of hydrogen taken in the well layer 14 A can be reduced.
  • the thickness per one layer of the barrier layer 14 B is preferably in the range from 1 nm to 8 nm.
  • FIG. 5 shows a relation between the thickness per one layer of the barrier layer 14 B and the life. The figure is a characteristics diagram in the case of changing the thickness of the barrier layer 14 B in the semiconductor light emitting device having the structure shown in FIG. 1 .
  • APC reliability test in which optical power was maintained at 1 mW under the environment of 25 deg C. was performed, and the elapsed time that the operating current was increased up to 50% or more of the initial operating current was measured.
  • the thickness of the barrier layer 14 B is preferably in the range from 1 nm to 8 nm.
  • the second guide layer 15 is, for example, about 100 nm thick, and is made of undoped GaAs.
  • the second cladding layer 16 is, for example, about 200 nm thick, and is made of a p-type Al 0.47 Ga 0.53 As mixed crystal doped with the p-type impurity such as zinc (Zn).
  • the etching stop layer 17 is, for example, about 30 nm thick, and is made of a p-type GaAs doped with the p-type impurity such as zinc.
  • the third cladding layer 18 is, for example, about 1.3 ⁇ m thick, and is made of the p-type Al 0.47 Ga 0.53 As mixed crystal doped with the p-type impurity such as zinc.
  • the contact layer 19 is intended to obtain ohmic junction with a p-side electrode described later.
  • the contact layer 19 is, for example, about 300 nm thick, and is made of the p-type GaAs doped with concentrated the p-type impurity such as zinc.
  • the laser diode 10 has an n-side electrode 21 on the reverse side of the substrate 11 .
  • the n-side electrode 21 has a structure in which, for example, a gold (Au) layer, an alloy layer of gold and germanium (Ge), and a gold layer are sequentially layered from the substrate 11 side, and the lamination is alloyed by heat treatment.
  • the n-side electrode 21 is electrically connected to the first cladding layer 12 with the substrate 11 in between. Meanwhile, a p-side electrode 22 is provided on the contact layer 19 .
  • the p-side electrode 22 has a structure in which, for example, a titanium (Ti) layer, a platinum (Pt) layer, and a gold layer are sequentially layered from the contact layer 19 side, and the lamination is alloyed by heat treatment.
  • the p-side electrode 22 is electrically connected to the contact layer 19 .
  • a pair of side faces opposed to each other, for example, in the length direction of the contact layer 19 is a pair of resonator end faces.
  • an unshown pair of reflector films is respectively formed on the pair of resonator end faces.
  • the reflectance of one reflector film of the pair of reflector films is adjusted to be low, and the reflectance of the other reflector film is adjusted to be high.
  • the reflector films are preferably formed from a multilayer film in which dielectric films are layered, since the reflectance can be voluntarily adjusted.
  • the reflectance of one resonator end face is adjusted to be about 50%, and the reflectance of the other resonator end face is adjusted to be about 98%.
  • the laser diode 10 can be manufactured, for example, as follows.
  • the first cladding layer 12 , the first guide layer 13 , the active layer 14 , the second guide layer 15 , the second cladding layer 16 , the etching stop layer 17 , the third cladding layer 18 , and the contact layer 19 which respectively have the foregoing thickness and are made of the foregoing material, are layered sequentially.
  • a raw material of gallium trimethyl gallium, triethyl gallium or the like is used.
  • a raw material of aluminum trimethyl aluminum, triethyl aluminum or the like is used.
  • indium trimethyl indium, triethyl indium or the like is used.
  • arsenic arsine, tertiary butyl arsine or the like is used.
  • nitrogen dimethyl hydrazine, monomethyl hydrazine, tertiary butyl hydrazine or the like is used.
  • antimony trimethyl antimony, dimethyl tertiary butyl antimony or the like is used.
  • the flow rate of the organic nitrogen compound is preferably more than 0 cm 3 /min and equal to or less than 135 cm 3 /min.
  • the barrier layer 14 B When nitrogen is to be contained in the barrier layer 14 B, the flow rate of the organic nitrogen compound is preferably more than 0 cm 3 /min and equal to or less than 135 cm 3 /min. Thereby, the amount of hydrogen taken in the active layer 14 can be small.
  • the flow rate of the organic nitrogen compound is adjusted according to the amount of nitrogen contained in the well layer 14 A and in the barrier layer 14 B. When nitrogen is not to be contained in the barrier layer 14 B, the flow rate of the organic nitrogen compound is 0 cm 3 /min.
  • FIG. 6 shows a relation between the flow rate of dimethyl hydrazine and the hydrogen concentration in the well layer 14 A in the case of using dimethyl hydrazine as a raw material of nitrogen when the well layer 14 A was formed.
  • the impurity concentration of hydrogen in the well layer 14 A can be 3 ⁇ 10 19 cm ⁇ 3 or less.
  • the growth temperature when forming the active layer 14 is preferably in the range, for example, from 400 deg C. to 700 deg C.
  • the growth temperature is low, favorable crystallinity is not able to be obtained.
  • the growth temperature is high, desorption of nitrogen is accelerated, and efficiency of taking nitrogen in the active layer 14 is decreased.
  • higher growth temperatures are preferable, since the uptake amount of hydrogen can be decreased.
  • FIG. 7 shows a relation between the growth temperature when the active layer 14 is grown and the hydrogen concentration in the active layer 14 . As shown in FIG. 7 , it is found that as the growth temperature becomes high, the hydrogen concentration is decreased. Therefore, the growth temperature when forming the active layer 14 is preferably in the range, for example, from 500 deg C. to 600 deg C.
  • the step of removing aluminum in which gas reactive with aluminum is flowed is performed before the active layer 14 is grown.
  • the step of removing aluminum in which gas reactive with aluminum is flowed is performed before the active layer 14 is grown.
  • aluminum remaining, for example, as an attached matter inside the reaction chamber can be removed, and the impurity concentration of aluminum in the active layer 14 can be 1 ⁇ 10 18 cm ⁇ 3 or less.
  • gas reactive with aluminum dimethyl hydrazine, ammonia, nitrogen radical obtained by decomposing nitrogen by plasma or the like can be cited. Two or more thereof can be used by mixing.
  • the step of removing aluminum may be performed after the layer containing aluminum is grown and before the active layer 14 is grown, in the case that there is a step of growing a layer containing aluminum such as the first cladding layer 12 before growing the active layer 14 .
  • the step of removing aluminum may be performed after the first cladding layer 12 is grown and before the first guide layer 13 is grown. Otherwise, the step of removing aluminum may be performed concurrently in the step of forming the first guide layer 13 . Otherwise, the step of removing aluminum may be performed after the first guide layer 13 is grown and before the active layer 14 is grown.
  • the gas reactive with aluminum is preferably supplied together with the raw material of the Group 15 element in a state that supply of the raw material of the Group 13 element is stopped. Thereby, reaction products containing the Group 13 element are inhibited from newly being adhered.
  • the insulating layer 20 made of the foregoing material is formed on the both sides of the ridge by, for example, CVD (Chemical Vapor Deposition) method.
  • the reverse side of the substrate 11 is ground to adjust the thickness of the substrate 11 to the degree of about 10 ⁇ m, and the n-side electrode 21 is formed on the reverse side of the substrate 11 .
  • an aperture is provided correspondingly to the contact layer 19 , and the p-side electrode 22 is formed on the contact layer 19 and the insulating layer 20 .
  • the substrate 11 is adjusted to a given size, and the unshown reflector films are formed on the pair of resonator end faces opposed to each other in the length direction of the contact layer 19 . Thereby, the laser diode 10 shown in FIG. 1 is formed.
  • the laser diode 10 when a given voltage is applied between the n-side electrode 21 and the p-side electrode 22 , a current confined by the contact layer 19 , the third cladding layer 18 , and the etching stop layer 17 is injected to the active layer 14 , and light emission by electron-hole recombination is generated in the well layer 14 A.
  • the impurity concentrations of hydrogen and aluminum in the active layer 14 are in a given range, the operating current is inhibited from increasing, and the life is prolonged.
  • FIG. 7 shows a schematic view of a configuration example of an optical module including the foregoing laser diode 10 .
  • An optical module 100 is used as, for example, an FEM (Front End Module) for transformation between optical signals and electric signals in the fast optical communication system.
  • the optical module 100 includes a transmitter 110 and a receiver 120 on a substrate 101 . Fibers 130 and 140 are respectively connected to the transmitter 110 and the receiver 120 through unshown connectors.
  • the transmitter 110 has, for example, the foregoing laser diode 10 and a driver 112 for driving the laser diode 10 .
  • a driver 112 a known driver IC (Integrated Circuit) can be used.
  • the receiver 120 is a general receiver including, for example, a photoelectric transformation device (photo diode) 121 and an amplifier 122 such as a TIA (Trans Impedance Amplifier) and an LIA (Limiting Impedance Amplifier).
  • a photoelectric transformation device photo diode
  • an amplifier 122 such as a TIA (Trans Impedance Amplifier) and an LIA (Limiting Impedance Amplifier).
  • the laser diode 10 in the transmitter 110 , the laser diode 10 is driven by the driver 112 based on an electric signal S 1 supplied from outside, and an optical signal P 1 is transmitted through the fiber 130 .
  • an optical signal P 2 supplied through the fiber 140 approaches the photoelectric transformation device 121 and is transformed into an electric signal, the electric signal is amplified by the amplifier 122 , is provided with necessary transformation process, and is output outside as an electric signal S 2 .
  • the optical module 100 includes the laser diode 10 according to this embodiment, even if used for a long time, the operating current is inhibited from increasing, usage for a long time is enabled, and low electric power is realized.
  • the impurity concentrations of hydrogen and aluminum in the active layer 14 are in a given range. Therefore, the operating current can be inhibited from increasing, and long life can be realized so that, for example, the elapsed time that the operating current is increased up to 50% or more of the initial operating current is 1000 hours or more.
  • the thickness per one layer of the barrier layer 14 B in the active layer 14 is in the range from 1 nm to 8 nm, the life can be further prolonged.
  • the impurity concentration of hydrogen in the active layer 14 can be 3 ⁇ 10 19 cm ⁇ 3 or less. Therefore, the laser diode according to this embodiment can be easily manufactured.
  • the present invention is not limited to the foregoing embodiment, and various modifications may be made.
  • the semiconductor materials making up the laser diode 10 have been described with specific examples. However, other materials may be used.
  • the case using the substrate 11 made of GaAs has been described. However, the substrate made of other material such as InP may be used.
  • FIG. 9 shows a structural example thereof.
  • a laser diode 30 for example, on the obverse side of a substrate 31 made of n-type GaAs, an n-type multilayer reflector film 32 in which an n-type Al 0.9 Ga 0.1 As mixed crystal layer and an n-type GaAs layer are alternately layered, a first guide layer 33 made of undoped GaAs, an active layer 34 , a second guide layer 35 made of undoped GaAs, a p-type multilayer reflector film 36 in which a p-type Al 0.9 Ga 0.1 As mixed crystal layer and a p-type GaAs layer are alternately layered, and a contact layer 37 made of p-type GaAs are layered sequentially, and a current confinement layer 38 made of an AlAs oxide
  • a p-side electrode 40 is provided through the aperture provided in an insulating layer 39 .
  • an n-side electrode 41 is provided on the reverse side of the substrate 31 .
  • the structure of the active layer 34 is similar to of the active layer 14 described in the foregoing embodiment.
  • the configuration example of the optical module has been described.
  • the optical module may have other configurations.
  • the optical module may be composed of only the transmitter 110 .

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