US20050130045A1 - Exposing mask and production method therefor and exposing method - Google Patents

Exposing mask and production method therefor and exposing method Download PDF

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US20050130045A1
US20050130045A1 US10/508,074 US50807404A US2005130045A1 US 20050130045 A1 US20050130045 A1 US 20050130045A1 US 50807404 A US50807404 A US 50807404A US 2005130045 A1 US2005130045 A1 US 2005130045A1
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Prior art keywords
pattern
exposure
mask
light blocking
transmissive
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Ken Ozawa
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Sony Corp
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Sony Corp
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Publication of US20050130045A1 publication Critical patent/US20050130045A1/en
Priority to US12/247,972 priority Critical patent/US8092960B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present invention relates to an exposure mask for forming a three-dimensional shape such as an optical lens array by means of exposure, and a fabrication method for the exposure mask.
  • micro optical parts such as microlens arrays for use in applied products of imaging devices such as CCDs, (Charge Coupled Devices) and LCDs (Liquid Crystal Displays)
  • imaging devices such as CCDs, (Charge Coupled Devices) and LCDs (Liquid Crystal Displays)
  • photolithography techniques employed in the fabrication of semiconductors and liquid crystal devices.
  • this method three-dimensionally processes a photoresist by giving the desired exposure amount distribution to the photoresist which is a photosensitive material, and three-dimensionally processes a silicon or glass substrate or the like by etching using the photoresist as a mask.
  • a first example of a photomask used in this lithography process is realized by multiple exposure using a plurality of masks as shown in FIG. 29 .
  • An exposure method using this technique will be described on a one-dimensional basis with reference to FIG. 29 .
  • a final exposure distribution is assumed to be D(X) in FIG. 29 .
  • an exposure amount E[ 1 ] is given to a region ⁇ 1 > through a mask ( 1 ) in FIG. 29 .
  • an exposure amount E[ 2 ] is given to a region ⁇ 2 > through a mask ( 2 ).
  • a total exposure D 1 of the region ⁇ 1 > becomes E[ 1 ]+E[ 2 ].
  • HEBS High Energy Beam Sensitive
  • the technique of the first example using multiple exposure with a plurality of masks is a plurality of multiple exposures and temporally needs multiple-step exposure, a staircase-like shape remains in any obtainable cumulative exposure amount distribution.
  • the obtainable number of exposure gray scales is the number of mask, i.e., the number of times of exposure, and actually corresponds to approximately 10 steps which result in the problem that a sufficient number of gray scales are not obtainable.
  • the one-exposure method of the second example which uses the gray-tone mask is capable of providing an approximately continuous exposure amount distribution, but in general, this gray-tone mask is extremely difficult to fabricate and needs a special substrate material and special deposition process techniques. This results in extremely high mask cost.
  • the special film material tends to suffer variations with time due to heat and has the problem of performance stability during use (thermal stability due to exposure light absorption).
  • the one-exposure method which uses the mask of the third example does not use a special semi-transparent light-blocking film and is made of so-called ordinary binary patterns, but the light intensity on the exposure surface is set to vary approximately continuously with respect to positions.
  • the mask is separated into sub-pixels which are divided vertically and horizontally with respect to the direction of the optical axis, and each sub-pixel is divided into color tone elements which are based on gray scale resolution, and light intensity is controlled by means of the ratio of transmissive ones to non-transmissive ones of these color tone elements.
  • the sub-pixel size (sub-pixel pitch) must be set to not greater than a pitch defined optically, so that an image of the opening pattern in the sub-pixel is not formed.
  • the specifications of U.S. Pat. Nos. 3,373,518 and 5,310,623 mainly assume proximity exposure as a premise, and do not make specific reference to any projection exposure method.
  • the present invention has been made to solve the above-mentioned problems. Namely, according to the present invention, in an exposure mask for use in an exposure apparatus, a plurality of pattern blocks made of a pair of a light blocking pattern which blocks light emitted from the exposure apparatus and a transmissive pattern which transmits this light are continuously arranged, and the pitch of the continuous pattern blocks is constant in each of X and Y directions and the ratio of the light blocking pattern to the transmissive pattern does not takes on digitized (discrete) values but varies continuously gradually.
  • the light blocking pattern or the transmissive pattern is polygonal, and in order to reduce diffraction and scattering effects at pattern edges difficult to predict theoretically, the light blocking pattern and the transmissive pattern in each diffraction pattern block are simple squares or rectangles. Accordingly, a variable rectangular beam writing method which is currently the mainstream in semiconductor lithography can be applied to EB writing in a mask fabrication process. 2 nm is obtained on the mask as the minimum grid of a variable rectangular beam type of cutting-edge EB writer, and approximately continuous values are obtained as the converted size of the above-mentioned opening pattern on the wafer surface.
  • a fabrication method for an exposure mask in which a plurality of pattern blocks made of a pair of a light blocking pattern which blocks light emitted from an exposure apparatus and a transmissive pattern which transmits this light are continuously arranged so that a three-dimensional shape is formed by irradiating a predetermined amount of light onto a photosensitive material, includes a step of calculating an exposure amount distribution on the photosensitive material from design data on the three-dimensional shape, a step of calculating a transmittance distribution of the exposure mask based on the exposure amount distribution, inclusive of a main error cause such as flare intensity on an exposure surface, a step of calculating the pitch of continuous pattern blocks from optical conditions of the exposure apparatus, and a step of calculating the ratio of the light blocking pattern to the transmissive pattern within the pitch of the pattern blocks according to a transmittance distribution and arranging a plurality of pattern blocks having the respective ratios.
  • the pattern of the exposure mask is a simple binary pattern made of a light blocking pattern and a transmissive pattern. Accordingly, since it is not necessary to use a special light blocking film material, the fabrication cost of the exposure mask can be reduced and long-term performance stability can be ensured.
  • a plurality of pattern blocks each made of these light blocking pattern and transmissive pattern are continuously. arranged at a constant pitch, and the ratio of the light blocking pattern to the transmissive pattern is set be gradually varied, whereby the 0th order light intensity is modulated and a sufficient number of gray scales can be obtained even with one exposure.
  • the present invention has the following advantages. Namely, it is possible to easily fabricate masks from binary patterns each made of a transmissive pattern and a light blocking pattern, and it is also possible to obtain a sufficient number of gray scales by means of one mask. Accordingly, it is possible to greatly reduce costs to be spent for masks when a three-dimensional shape is to be obtained by exposure, and it is possible to easily obtain a three-dimensional shape of high accuracy.
  • FIG. 1 is an explanatory schematic view of the principle of a mask according to the mode ;
  • FIGS. 2A and 2B are explanatory views of calculated examples of 0th order light intensity with respect to the size ratios of patterns
  • FIG. 3 is a view showing a contrast curve of a photoresist
  • FIG. 4 is a flowchart describing a fabrication method for a mask
  • FIG. 5 is a view showing an example of a mask constructed by one-dimensional line-and-space patterning
  • FIG. 6 is an explanatory view of the correlation between pattern and transmittance
  • FIG. 7 is a view showing a target three-dimensional shape
  • FIG. 8 is a view showing relative intensities obtained when hole sizes are changed.
  • FIG. 9 is a view showing a mask for forming a concave spherical lens array
  • FIG. 10 is a view showing a portion corresponding to one lens element
  • FIG. 11 is a view showing a mask for forming quadrangular pyramid shapes
  • FIG. 12 is a view showing a mask for forming a concave cylindrical lens array
  • FIGS. 13A to 13 E are explanatory views of another embodiment
  • FIG. 14A are explanatory views of a target shape of another embodiment
  • FIG. 15 is an explanatory view of a remaining resist film characteristic
  • FIG. 16 is an explanatory view of a resist film thickness loss distribution after development with respect to image height
  • FIG. 17 is an explanatory view of the transmittance and space size of a mask Mx
  • FIG. 18 is an explanatory schematic view of the influence of flare
  • FIG. 19 is an explanatory view of resist heights (shape errors) due to flare
  • FIG. 20 is an explanatory schematic view of a fabrication method for an exposure mask
  • FIG. 21 is a flowchart illustrating an actual example of pattern design
  • FIGS. 22A and 22B are views showing specific calculated results
  • FIGS. 23A and 23B are explanatory schematic views of an isolated lens
  • FIG. 24A and 24B are explanatory schematic views of a lens array in which a space lies between lens elements
  • FIG. 25 is an explanatory schematic view of patterns corresponding to the outermost lens periphery
  • FIG. 26 is an explanatory view of an exposure result of pattern design which takes background tones into account
  • FIGS. 27A to 27 C are explanatory schematic views of a fabrication process for a microlens array
  • FIG. 28 is an explanatory schematic view of an apparatus to which a microlens array is applied.
  • FIG. 29 is an explanatory schematic view of an example of multiple exposure.
  • FIG. 30 is an explanatory conceptual diagram of a gray-tone mask.
  • an exposure apparatus S for use in transfer is constructed so that the pattern surface of a mask M and a surface of a wafer W are placed in a conjugate (image-forming) relationship, and normally forms an image of a pattern on the bottom surface of the mask M on the surface of the wafer W, thereby effecting transfer of the pattern.
  • fine pitch patterns not greater than Pmin do not allow diffracted light to reach the surface of the wafer W, so that interference of diffracted light, i.e., image formation of mask patterns, does not at all occur.
  • the 0th order light reaches the wafer W.
  • the intensity of the 0th order light becomes smaller with respect to an increase in light blocking band width, whereas if light blocking parts have the same size, the intensity of the 0th order light becomes larger with respect to an increase in pitch within the range of pitches not greater than Pmin.
  • R ( ⁇ 1) be the area ratio of transmissive portions in a unit repeated pattern
  • light intensity which reaches the wafer surface is R 2 .
  • the 0th order light in a 1:1 line-and-space pattern is 0.25.
  • the 0th order light in a 1:1 two-dimensional square hole array is 0.0625.
  • the mask M according to the present mode is characterized in that a mask pattern is designed by the use of this principle. Namely, a plurality of pattern blocks are constructed at a pitch not greater than the value calculated from Equation 1, and the size ratio of a light blocking pattern (light blocking band) to a transmissive pattern in each of the pattern blocks is varied within the range of the pitch, whereby it is possible to obtain the desired 0th order light.
  • FIGS. 2A and 2B show calculated examples for the case of a one-dimensional pattern.
  • the pitch (P) of each pattern block PB is 400 nm and Equation 1 is satisfied from the optical conditions of the exposure apparatus shown in FIG. 2A , whereby image formation does not occur.
  • T abs ⁇ ( W ) ( P - W P ) 2 ( Equation ⁇ ⁇ 2 )
  • the final objective is to transfer a three-dimensional shape such as a lens to a substrate of glass or the like, and its final shape accuracy greatly depends on a photoresist shape which is an intermediate product.
  • the three-dimensional shape is transferred to the substrate by drying etching using as a mask the three-dimensional shape of a photoresist obtained after exposure and development. Accordingly, it is important to highly accurately form this photoresist shape.
  • FIG. 3 is a graph showing a contrast curve which is generally plotted in order to measure the sensitivity and contrast of a photoresist.
  • the horizontal axis represents the logarithms of exposure amounts given to the photoresist, while the vertical axis represents film thicknesses after developments which are measured by a film thickness gauge.
  • an exposure amount with which a film thickness loss begins is defined as E 0
  • an exposure amount with which the film thickness reaches zero is defined as Eth.
  • the film thickness of a photoresist to be used becomes correspondingly sufficient with respect to the desired processing depth amount.
  • the exposure amount necessary for obtaining a remaining film thickness Z is found as Ez. Accordingly, from a shape distribution at a height at the desired position, the exposure amount distribution necessary for obtaining this shape is found.
  • E 2 Emax
  • the transmittance of a mask is calculated on the basis of this exposure amount.
  • D(X) for obtaining this remaining film distribution f(X) is obtained from the contrast curve of the photoresist to be used.
  • This D(X) is standardized so that the maximum value of D(X) becomes E 2 , whereby D(X) is converted to a target relative transmittance distribution T(X) of the mask.
  • a mask pattern from which this standardized T(X) can be obtained is constructed by using a pattern pitch and the light blocking pattern width of each mask block which satisfy Equation 1.
  • the etching conversion difference is not a constant amount but an amount which varies depending on the height of a resist. Accordingly, the data is acquired in advance and a table of function approximation or conversion difference is created to define f′(X).
  • f et ( ) be a function expressing the conversion difference
  • f et ⁇ 1 ( ) represents the inverse function of f et ( ).
  • f′ ( x ) f et ⁇ 1 ( f ( x )) (Equation 3)
  • Step 4 D(X) is standardized with the maximum exposure amount E 2 and is converted to the target relative transmittance distribution T(X).
  • Step 6 Light blocking pattern widths (line widths) are respectively varied between Wmin and P-Smin at the pitch P derived previously, whereby the 0th order light intensity is calculated for each of the line widths as shown in FIGS. 2A and 2B .
  • the light blocking patterns are defined to be infinitely repeated at the pitch P.
  • the whole is standardized with the 0th order light intensity (I 0 ) for a reference line width.
  • Wmin represents the lower fabrication limit of the sizes of lines (not removed) which are the light blocking patterns of the mask
  • Smin represents the lower fabrication limit of the sizes of spaces (removed) which are the transmissive patterns of the mask.
  • L, P, Wmin and Smin are size notations relative to the wafer surface which are converted in terms of the projection magnification of an exposure apparatus to be used, and Wmin and Smin are set in advance so as not to become lower than the lower limit of mask fabrication size during the design of the mask pattern.
  • Step 7 Line widths W(X) at X coordinates in a target three-dimensional shape are obtained from the following equation in which the normalized 0th order light intensity obtained in Step 6 and the target relative transmittance distribution T(X) obtained in Step 4 are made equal to each other.
  • W ( X ) P (1 ⁇ square root ⁇ square root over ( I 0 ⁇ T ( x )) ⁇ (Equation 4)
  • FIG. 5 is a view showing an example of a mask constructed by one-dimensional line-and-space patterning.
  • the pitch P of the continuous pattern blocks PB is set to 1/an integer of the element size 2L, and the variation of the ratio of the line (the light blocking pattern PB 1 ) to the space (the transmissive pattern PB 2 )is inverted at an interval of L. Accordingly, a three-dimensional shape made of continuous convex and concave shapes can be formed by mask exposure.
  • the two-dimensional mask construction pattern is formed by a contact hole pattern or an island pattern which is used for general photomasks for fabrication of semiconductor devices, liquid crystal devices and the like.
  • a target shape is a one-dimensional spherical array (cylindrical lens array) will be described below with reference to the flowchart shown in FIG. 4 mentioned previously.
  • This target shape is shown in FIG. 7 .
  • etching rate for a resist/substrate to be used is separately found.
  • the etching rate is assumed to be 1:1. Namely, it is assumed that the resist shape, after etching, is processed without modification (this processing corresponds to Step 2 of FIG. 4 ).
  • ⁇ , NA, ⁇ and magnification are defined.
  • the background of a mask is 100% transmissive, and the transmittance of each line pattern is 0% (light is completely blocked).
  • the element center is defined as site 0, and defines as ⁇ 1, ⁇ 2, . . . , ⁇ 25 (this processing corresponds to Step 5 of FIG. 4 ).
  • the 0th order light intensities obtainable when the light block pattern width is varied at a pitch of 400 nm are calculated (refer to FIGS. 2A and 2B ).
  • light blocking band widths which enable target relative transmittances to be obtained at the respective sites are found from the transmittance distribution (Equation 6) found in Step 4 shown in FIG. 4 .
  • site m its central X coordinate is mP
  • the light blocking pattern width in each of the sites is obtained from Equation 4 (this processing corresponds to Steps S 6 and S 7 of FIG. 4 ).
  • a target shape is a two-dimensional array.
  • the target shape is assumed to be a spherical lens array having a radius L and element XY sizes 2L ⁇ 2L.
  • One-dimensional processing of Steps S 1 to S 5 mentioned above is a common process.
  • its constituent patterns are not line-and-space patterns but a contact hole array or an island array.
  • its resolution limit pitch is the same as that in the one-dimensional construction, and its construction pitch is a pitch not greater than Pmin expressed by Equation 1.
  • an objective is to obtain an arbitrary three-dimensional intensity distribution over a light blocking blank of 0% background transmittance by means of a contact hole array of 100% transmittance.
  • the XY sizes of their holes are varied in matrix form to obtain various kinds of transmittance data.
  • the hole patterns of this construction are assumed to be defined as two-dimensional infinite repetition of holes of the same hole size, and the transmittance data are calculated on this assumption.
  • Target transmittances at sites m and n are T(mP, nP) similarly to the above discussion regarding one dimension, and patterns (XY hole sizes) which obtain these target transmittances are arranged in the respective sites through steps to which Steps 6 and 7 of FIG. 4 are two-dimensionally expanded.
  • a target three-dimensional shape f(X, Y) may be arbitrary and it is possible to design masks for forming, from photoresists, arbitrary three-dimensional shapes such as aspherical arrays or quadrangular pyramid shapes (pyramids).
  • FIG. 9 is a view showing a mask for forming a concave spherical lens array by the use of a positive resist
  • FIG. 10 is a view showing a portion corresponding to one lens element of the mask shown in FIG. 9 .
  • dot-dashed lines represent the boundaries between elements which correspond to individual lenses.
  • one pattern block is constructed as a through-hole type which is made of a light blocking pattern and a transmissive pattern. Pattern blocks are two-dimensionally arranged so that the ratio of the light blocking pattern to the transmissive pattern is gradually varied.
  • pattern blocks arranged along the boundary are disposed so that their transmissive patterns (or their light blocking patterns) overlap one another between adjacent ones of the elements. Accordingly, it is possible to eliminate unnecessary seams from the boundaries between lenses formed by the respective elements. It is to be noted that if the transmittance distribution of this mask is inverted, i.e., the hole size of the center of the lens is made smallest and the other hole sizes are made larger toward the periphery of the lens, a convex spherical lens array can be formed. Otherwise, if the background is made 100% transmissive and an island array pattern is adopted, a mask which can form a convex spherical lens array is obtained.
  • FIG. 11 is a view showing a mask for forming quadrangular pyramid shapes by the use of a positive resist.
  • FIG. 11 there is shown only a mask portion corresponding to one of the shown four quadrangular pyramid shapes.
  • one pattern block is constructed as a square hole array type which is made of a light blocking pattern and a transmissive pattern, and pattern blocks are two-dimensionally arranged so that the ratio of the light blocking pattern to the transmissive pattern is varied according to the desired exposure amount distribution.
  • FIG. 12 is a view showing a mask for forming a concave cylindrical lens array by the use of a positive resist.
  • FIG. 12 there is shown only a mask portion corresponding to one of the shown two cylindrical lenses.
  • one pattern block is made of a straight-line-shaped light blocking pattern and a transmissive pattern, and pattern blocks are one-dimensionally arranged so that the ratio of the light blocking pattern to the transmissive pattern is gradually varied.
  • FIGS. 13A to 13 E are explanatory schematic views of another embodiment. This embodiment is characterized in that in order to form one three-dimensional structure on a wafer coated with a photoresist, the exposure amount necessary for forming the shape of the three-dimensional structure is obtained by addition of two exposures.
  • masks Mx and My each formed of lines extending in a direction orthogonal to those of the other are used (refer to FIGS. 13A and 13B ), and two exposures using these masks Mx and My are superimposed to perform addition of the exposure amounts, thereby forming the objective shape.
  • FIG. 14B when a two-dimensional lens array as shown in FIG. 14B is to be formed, the mask Mx having line and space patterns arranged in one direction (refer to FIG. 13A ) and the mask My having line and space patterns arranged in a direction perpendicular to this one direction (refer to FIG. 13B ) are employed, and exposures using the masks Mx and My are performed at the same position on the same wafer in a superimposed manner, whereby a resist shape for a two-dimensional lens array as shown in FIGS. 14A and 14C is obtained through development.
  • FIG. 14A shows a unit lens shape
  • FIG. 14B shows an array lens shape.
  • this embodiment is based on the assumption that the background of each of the masks is 0% transmissive and space patterns are respectively arranged in sites.
  • the unit lens shape of a two-dimensional lens array to be formed uses an aspherical function f(r) which is defined by the following equation 7.
  • f(r) aspherical function f(r) which is defined by the following equation 7.
  • c (curvature) 0.004
  • K (conic constant) ⁇ 0.75.
  • f ⁇ ( r ) cr 2 1 + 1 - ( 1 + k ) ⁇ c 2 ⁇ r 2 ( Equation ⁇ ⁇ 7 )
  • a specific design technique for the masks Mx and My of this embodiment shown in FIGS. 13A and 13B will be described below.
  • the etching selectivity is 1:1 and the shape of the photoresist after development is equal to a substrate shape after etching.
  • FIG. 16 ( a ) A resist film thickness loss distribution after development with respect to image height is shown in FIG. 16 ( a ).
  • photoresists are inferior in the linearity of their remaining film thicknesses relative to exposure amounts in the vicinity of exposure amounts for which their film thicknesses become completely zero. Accordingly, these regions should not be used for structure formation. For this reason, the lens center is designed so that its remaining film becomes not zero (the amount of film thickness loss is not 5 ⁇ m) but 0.5 ⁇ m thick.
  • E Mx (X) is set to E 0
  • T L (X) is obtained by dividing E(X) by this E 0 .
  • T max [( P ⁇ L min )/ P] 2
  • L min 160 nm (in this embodiment, 400 nm on the mask on the assumption that a 1.25 ⁇ reduction projection exposure apparatus is used)
  • T max is 0.706.
  • This S(X) is shown in FIG. 17 ( b ).
  • the mask My is obtained by rotating the pattern of the mask Mx by 90°.
  • the masks Mx and My for forming the two-dimensional lens array can be designed through the above-mentioned procedures.
  • the four corners of each unit lens are degraded in shape accuracy because of its mask pattern design.
  • the range in which formed shapes can be actually obtained with good accuracy is X 2 +Y 2 ⁇ 10 2 as shown in FIG. 14A (20 ⁇ m is the length of one side of each unit lens), and when a lens array formed by the present method is to be actually incorporated into a predetermined optical system, the lens array is desirably used in combination with a circular opening array for blocking light at four corners as shown in FIG. 14C , as the occasion demands.
  • FIG. 13E shows the simulation result of a resist shape obtainable when the mask Mx having the transmittance and the space width shown in FIG. 17 ( b ) and the mask My orthogonal to this mask Mx are subjected to two exposures followed by development.
  • FIGS. 13C and 13D show the simulation results of formed shapes obtainable when the respective masks Mx and My are exposed, and in practice, after two exposures with the masks Mx and My have been performed, the lens shape shown in FIG. 13E can be obtained. It can be seen that a resist shape of good accuracy can be similarly obtained by the use of two exposures.
  • the present embodiment it is possible to form a two-dimensional lens array shape by exposing a mask having a simple line-and-space pattern. Structures such as concave-convex lenses, aspherical lenses and prisms can also be formed by designing their patterns through the above-mentioned procedures.
  • the present embodiment can also be applied to design and fabrication of any two-dimensional shape forming masks other than the above-mentioned masks for fabricating microlens arrays.
  • the masks Mx and My are shown as separate masks, but the mask patterns Mx and My may be arranged on the same substrate so that the exposure of the present embodiment can be applied only by modifying an exposure area without exchange of masks. Accordingly, it is possible to realize a reduction in total exposure processing time and a decrease in superimposition error.
  • This embodiment provides a fabricating method for an exposure mask which takes into account the flare amount of the optical system of an exposure apparatus.
  • a photoresist is formed into a predetermined three-dimensional structure (such as a lens array)
  • a predetermined three-dimensional structure such as a lens array
  • the error has a tendency to become large in formation height at a location where the mask pattern opening size is small, i.e., the mask transmittance is small.
  • a main possible cause is that when a large exposure amount is given by the exposure apparatus, an unexpected “fog exposure” occurs under the influence of flare in the exposure apparatus, so that DC component-like exposure amounts occur over the entire exposure field.
  • the range of transmittance of the mask needs to be made larger.
  • the transmittance of the mask may be a maximum of 70% to 80% and a minimum of several %.
  • the flare in the exposure amount is a phenomenon which occurs owing to the surface roughness of the polished surfaces of lenses which constitute the optical system as well as because anti-reflection layers coated on the lenses do not have completely zero reflectances, and lights reflected from various surfaces including the mask are subjected to multiple diffuse reflection and reach an image-forming plane as so-called stray light.
  • stray light which can be regarded as a uniform DC component is present on the wafer surface (refer to FIG. 18 ( b )). It is said that even an exposure apparatus for use in semiconductor fabrication has 3% to 4% flare.
  • the amount of flare is at the same level as the minimum value of the above-mentioned mask transmittance, and the influence of unexpected flare on exposure amounts becomes remarkable in the peripheral portion of the lens.
  • a specific estimation example of this shape error is shown in FIG. 19 .
  • the respective data shown in FIG. 19 use resist contrasts and lens design values which will be described later, and are as follows:
  • the lens is formed to be 1.2 um lower than its design height at its outermost periphery under the influence of 3% flare.
  • FIG. 20 is an explanatory schematic view of a fabrication method for an exposure mask according to the present embodiment. It is assumed that the amount of flare is known by being quantitatively measured by a method which will be described later in the embodiment (refer to International Publication WO2002-009163 (Japanese Patent Application No. 2002-514774), SPIEVOL. 3051 (1997) P708-P713, Measuring Flare and Its effect on Process Latitude).
  • an effective exposure amount at each position on the mask is the sum of transmitted light from the mask and flare which is a DC component.
  • a mask transmittance at each position is set so that this effective exposure amount can provide the desired lens shape.
  • the sag amount of the lens is 8.3 um.
  • the aspherical equation is assumed to be expressed by the above-mentioned Equation 7.
  • Equation 7 r represents the distance from the lens center
  • c represents a curvature which is the reciprocal of a radius of curvature.
  • the contrast of a resist to be used is measured in advance, and its film thickness during its initial unexposed state is 10 um.
  • NA numerical aperture
  • ⁇ coherence factor
  • the maximum value of non-imaging pitches derived from Equation 1 is 912.5 nm. Therefore, in the case of this embodiment, the pattern pitch is set to 700 nm which is 1/an integer of an entire lens size of 19.6 um.
  • a mask pattern can be formed in the range of space sizes 160 nm to 540 nm at a pitch of 700 nm.
  • the reference of the pattern is determined so that a maximum transmittance of 0.595 at the lens center can be obtained at a hole pitch of 700 nm with a hole size of 540 nm, whereby pattern design is performed so that the desired lens shape is obtained after development.
  • the flare amount is specified. This is assumed to be approximately calculated and quantified by the above-mentioned known technique. In these steps, it is assumed that the flare is 3%.
  • the flowchart proceeds to the following description.
  • an exposure amount (Ei) for obtaining a target height (Z) at each position (image height) is calculated.
  • a mask transmittance for obtaining the exposure amount (Ei) at each position is calculated.
  • a 1 um thick resist is left because, as described previously, it is preferable to form a resist shape with a slight film thickness left even at a location where its film thickness becomes smallest.
  • an exposure amount which provides a remaining film thickness of 1 um without a pattern is calculated as 116 [mJ/cm 2 ].
  • the setting of the exposure amount is performed by setting conditions for an exposure amount which allows the remaining film to become 1 ⁇ m thick at the lens center (zero image height) (Eset).
  • the theoretical value of mask transmittance at this time is 60%.
  • a space pattern size S(X) for obtaining this mask transmittance (T abs (X)) is calculated from the following equation.
  • S ( X ) P ⁇ [T abs ( X )] 1/2
  • FIGS. 22A and 22B show mask pattern solutions relative to 0% flare and 3% flare, and FIG. 22A shows a graph, while FIG. 22B shows numerical examples. From these figures, it is possible to see the difference between the mask pattern solutions based on the difference between the amounts of flare.
  • FIG. 23A An example of the case where an isolated lens (refer to FIG. 23A ) or a lens array in which a space lies between lens elements which are not completely continuous (refer to FIG. 23B ) will be described below.
  • the above description has referred to methods of designing mask patterns for forming lens arrays, but if an isolated lens or a lens array having lens elements with a space lying therebetween is to be formed, the same pattern as an outermost lens periphery needs to be arranged as the pattern of a lens periphery.
  • light intensity at one point on a wafer to be exposed i.e., light transmittance
  • a pattern for at least two pitches As shown in FIG. 24A by way of example, in a mask pattern arrangement at the outermost lens periphery, if a pitch P is ensured on one side but an infinite pitch (isolation) lies on the other side, the other side does not satisfy non-imaging conditions (Equation 1). Therefore, partial image formation occurs, so that ripple noise is produced in light intensity. Accordingly, the surface accuracy of a resist shape which is an intermediate product is remarkably degraded.
  • the same pattern as the mask pattern of the outermost lens periphery or edge (the ratio of a light blocking pattern to a transmissive pattern which are formed within a space size S N ) is arranged as a background tone forming pattern (a peripheral pattern).
  • a background tone forming pattern (a peripheral pattern).
  • FIGS. 24B and 25 One- and two-dimensional examples each including this peripheral pattern are shown in FIGS. 24B and 25 , respectively.
  • the background tone parts shown in each of FIGS. 24B and 25 correspond to peripheral patterns, respectively.
  • the hatched portions of FIG. 25 conceptually show the light blocking parts of the. respective peripheral patterns (background tone parts), and are chromium light blocking parts which are 0% transmissive.
  • FIG. 26 shows an example of light intensity simulation in pattern design for forming a specific one-dimensional isolated lens, and it can be seen that ripples are suppressed at the outermost lens periphery by a pattern arrangement which takes into account background tones.
  • a substrate made of, for example, a quartz glass wafer of diameter 6 inches is coated with a photoresist (hereinafter referred to simply as “resist”) which is a photosensitive material.
  • resist a photoresist which is a photosensitive material.
  • the coating thickness is, for example, approximately 10 um (refer to FIG. 27A ).
  • a stepper which is one type of exposure apparatus is made to radiate i-line light to expose the resist via the mask of the present embodiment.
  • an alignment mark which is to be necessary in a later step is also formed at the same time.
  • the resist is developed, whereby a three-dimensional shape set by the mask can be transferred to the resist (refer to FIG. 27B ).
  • the substrate is dry-etched via this resist.
  • the three-dimensional shape of the resist is transferred to the substrate.
  • the quartz substrate to which the three-dimensional shape has been transferred is coated with a resin having a high refractive index by spin coating or the like. In this manner, a plus power lens array made of the resin corresponding to the three-dimensional shape of the substrate is formed (refer to FIG. 27C ).
  • the apparatus shown in FIG. 28 is a liquid crystal projector, and includes TFTs (Thin Film Transistors) formed on its quartz substrate and a liquid crystal formed on the TFTs, and controls the orientation of its liquid crystal layer in units of pixels by the driving of the TFTs.
  • TFTs Thin Film Transistors
  • a microlens array ML formed with the mask according to the present embodiment individual lenses L are formed of a resin layer to correspond to the respective pixels of the liquid crystal projector.
  • the mask of the present embodiment it is possible to form the microlens array ML through one exposure, and the mask itself can be easily fabricated because the mask is a binary mask made of a combination of light blocking patterns and transmissive patterns. Accordingly, the microlens array ML to be applied to the liquid crystal projector can be inexpensively provided, and the cost of the liquid crystal projector can be reduced.
  • each of the lenses L to be formed can be freely set according to the ratio or arrangement of a light blocking pattern and a transmissive pattern, and an accurate lens shape can be reproduced by setting a mask exposure amount which makes good use of the development characteristics of the resist. Accordingly, it is possible to provide the lenses L of high accuracy without producing unnecessary seams at the boundaries between the individual lenses L.
  • the above-mentioned microlens array fabrication method uses an example in which after a three-dimensional photoresist shape has been formed, a substrate is processed by etching, but it is also possible to mass-produce microlens arrays by a stamper method using a more inexpensive resin or the like as a material, by electro forming a photoresist into a mother mold.
  • the lens array formed with the mask of the present embodiment can be applied not only to the liquid crystal projector but also to CCDs, other liquid crystal apparatus, semiconductor lasers, photosensitive devices and optical communication equipment.
  • the present embodiment can also be applied to the fabrication of three-dimensional shapes other than lenses.
  • the present invention can be applied to switches, relays and sensors using MEMS (Micro Electro Mechanical System) or NEMS (Nano Electro Mechanical System). Further, the present invention can be applied to the formation of the base shapes of substrates into arbitrary shapes in semiconductor fabrication and the like.
  • MEMS Micro Electro Mechanical System
  • NEMS Nano Electro Mechanical System

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
US10/508,074 2003-01-28 2004-01-28 Exposing mask and production method therefor and exposing method Abandoned US20050130045A1 (en)

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US9698157B2 (en) 2015-03-12 2017-07-04 Kabushiki Kaisha Toshiba Microstructure device and method for manufacturing the same
US20160313664A1 (en) * 2015-04-27 2016-10-27 Oki Data Corporation Optical head, optical print head, image formation apparatus, and image reader
US9696649B2 (en) * 2015-04-27 2017-07-04 Oki Data Corporation Optical head, optical print head, image formation apparatus, and image reader
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US11336885B2 (en) * 2019-12-30 2022-05-17 Lg Display Co., Ltd. 3D display apparatus having lenticular lenses
CN114253079A (zh) * 2020-09-21 2022-03-29 浙江水晶光电科技股份有限公司 灰度光刻的光强矫正方法、装置、设备及存储介质
CN113009788A (zh) * 2021-02-24 2021-06-22 上海华力微电子有限公司 光刻装置

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US20090044166A1 (en) 2009-02-12
EP1589373A1 (en) 2005-10-26
US8092960B2 (en) 2012-01-10
TW200426495A (en) 2004-12-01
KR20050092340A (ko) 2005-09-21
JP4296943B2 (ja) 2009-07-15
WO2004068241A1 (ja) 2004-08-12
EP1589373A4 (en) 2007-05-16

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