US20040221959A1 - Anodized substrate support - Google Patents

Anodized substrate support Download PDF

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Publication number
US20040221959A1
US20040221959A1 US10/435,182 US43518203A US2004221959A1 US 20040221959 A1 US20040221959 A1 US 20040221959A1 US 43518203 A US43518203 A US 43518203A US 2004221959 A1 US2004221959 A1 US 2004221959A1
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US
United States
Prior art keywords
substrate support
coating
support surface
substrate
inches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/435,182
Other languages
English (en)
Inventor
Soo Choi
Beom Park
Quanyuan Shang
Robert Greene
John White
Dong-Kil Yim
Chung-Hee Park
Kam Law
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US10/435,182 priority Critical patent/US20040221959A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PARK, CHUNG-HEE, YIM, DONG-KIL, LAW, KAM, CHOI, SOO YOUNG, GREENE, ROBERT I., PARK, BEOM SOO, SHANG, QUANYUAN, WHITE, JOHN M.
Priority to TW093112801A priority patent/TW200507157A/zh
Priority to KR1020040032489A priority patent/KR20040096785A/ko
Priority to CNB2004100347390A priority patent/CN100385640C/zh
Priority to JP2004140365A priority patent/JP2005051200A/ja
Priority to EP04011066A priority patent/EP1475460A1/de
Publication of US20040221959A1 publication Critical patent/US20040221959A1/en
Priority to US11/182,168 priority patent/US8372205B2/en
Priority to US11/406,136 priority patent/US7732010B2/en
Priority to KR1020060070677A priority patent/KR20060100302A/ko
Priority to JP2009149983A priority patent/JP2009239300A/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/16—Pretreatment, e.g. desmutting
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing

Definitions

  • Embodiments of the invention generally provide a substrate support utilized in semiconductor processing and a method of fabricating the same.
  • Liquid crystal displays or flat panels are commonly used for active matrix displays such as computer and television monitors, personal digital assistants (PDAs), cell phones and the like.
  • flat panels comprise two glass plates having a layer of liquid crystal material sandwiched therebetween. At least one of the glass plates includes at least one conductive film disposed thereon that is coupled to a power supply. Power supplied to the conductive film from the power supply changes the orientation of the crystal material, creating a pattern such as text or graphics seen on the display.
  • PECVD plasma enhanced chemical vapor deposition
  • Plasma enhanced chemical vapor deposition is generally employed to deposit thin films on a substrate such as a flat panel or semiconductor wafer.
  • Plasma enhanced chemical vapor deposition is generally accomplished by introducing a precursor gas into a vacuum chamber that contains a substrate.
  • the precursor gas is typically directed through a distribution plate situated near the top of the chamber.
  • the precursor gas in the chamber is energized (e.g., excited) into a plasma by applying RF power to the chamber from one or more RF sources coupled to the chamber.
  • the excited gas reacts to form a layer of material on a surface of the substrate that is positioned on a temperature controlled substrate support.
  • the substrate support may be heated in excess of 400 degrees Celsius. Volatile by-products produced during the reaction are pumped from the chamber through an exhaust system.
  • large area substrates utilized for flat panel fabrication are large, often exceeding 550 mm ⁇ 650 mm, and are envisioned up to and beyond 4 square meters in surface area.
  • the substrate supports utilized to process large area substrates are proportionately large to accommodate the large surface area of the substrate.
  • the substrate supports for high temperature use typically are casted, encapsulating one or more heating elements and thermocouples in an aluminum body. Due to the size of the substrate support, one or more reinforcing members are generally disposed within the substrate support to improve the substrate support's stiffness and performance at elevated operating temperatures (i.e., in excess of 350 degrees Celsius and approaching 500 degrees Celsius to minimize hydrogen content in some films).
  • the aluminum substrate support is then anodized to provide a protective coating.
  • a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches.
  • a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.
  • a substrate support is fabricated by a process including the steps of providing an aluminum body suitable for supporting a large area substrate on a substrate support surface, and forming an anodized coating having a surface roughness of between about 80 to about 200 micro-inches on the substrate support surface.
  • FIG. 1 depicts a schematic sectional view of one embodiment of a processing chamber having a substrate support assembly of the present invention
  • FIG. 2 is a partial sectional view of another embodiment of a substrate support assembly
  • FIG. 3 is a flow diagram of one embodiment of a method for fabricating a substrate support assembly
  • FIG. 4 is a flow diagram of another embodiment of a method for fabricating a substrate support assembly
  • FIG. 5 is a partial sectional view of another embodiment of a substrate support assembly.
  • FIG. 6 is a partial sectional view of another embodiment of a substrate support assembly.
  • the invention generally provides a large area substrate support and methods for fabricating the same.
  • the invention is illustratively described below in reference to a plasma enhanced chemical vapor deposition system, such as a plasma enhanced chemical vapor deposition (PECVD) system, available from AKT, a division of Applied Materials, Inc., Santa Clara, Calif.
  • PECVD plasma enhanced chemical vapor deposition
  • AKT a plasma enhanced chemical vapor deposition
  • the invention has utility in other system configurations such as physical vapor deposition systems, ion implant systems, etch systems, other chemical vapor deposition systems and any other system in which processing a substrate on a substrate support is desired.
  • FIG. 1 is a cross sectional view of one embodiment of a plasma enhanced chemical vapor deposition system 100 .
  • the system 100 generally includes a chamber 102 coupled to a gas source 104 .
  • the chamber 102 has walls 106 , a bottom 108 and a lid assembly 110 that define a process volume 112 .
  • the process volume 112 is typically accessed through a port (not shown) in the walls 106 that facilitates movement of a large area glass substrate 140 into and out of the chamber 102 .
  • the walls 106 and bottom 108 are typically fabricated from an unitary block of aluminum or other material compatible for processing.
  • the lid assembly 110 contains a pumping plenum 114 that couples the process volume 112 to an exhaust port (that is coupled to various pumping components, not shown).
  • the lid assembly 110 is supported by the walls 106 and can be removed to service the chamber 102 .
  • the lid assembly 110 is generally comprised of aluminum.
  • a distribution plate 118 is coupled to an interior side 120 of the lid assembly 110 .
  • the distribution plate 118 is typically fabricated from aluminum.
  • the center section includes a perforated area through which process and other gases supplied from the gas source 104 are delivered to the process volume 112 .
  • the perforated area of the distribution plate 118 is configured to provide uniform distribution of gases passing through the distribution plate 118 into the chamber 102 .
  • a heated substrate support assembly 138 is centrally disposed within the chamber 102 .
  • the support assembly 138 supports the large area glass substrate 140 (herein after “substrate 140 ”) during processing.
  • the substrate support assembly 138 generally includes an electrically conductive body 124 that is covered with an electrically insulative coating 180 over at least the portion of the body 124 that supports the substrate 140 .
  • the coating 180 has a surface finish of about 80 to about 200 micro-inches that has been demonstrated to improve deposition uniformity without expensive aging or plasma treatment of the support assembly 138 .
  • the coating 180 may also cover other portions of the body 124 . It is believed that the rougher surface offsets the effect of glass substrate thickness variation to provide a more uniform capacitance across the substrate, thereby enhancing plasma and deposition uniformity, and substantially eliminating the formation of thin spots in the deposited film
  • the conductive body 124 may be fabricated from metals or other comparably electrically conductive materials.
  • the coating 180 may be a dielectric material such as oxides, silicon nitride, silicon dioxide, aluminum dioxide, tantalum pentoxide, silicon carbide, polyimide, among others, which may be applied by various deposition or coating processes, including but not limited to, flame spraying, plasma spraying, high energy coating, chemical vapor deposition, spraying, adhesive film, sputtering and encapsulating.
  • the substrate support assembly 138 includes an aluminum conductive body 124 that encapsulates at least one embedded heating element 132 and a thermocouple 190 . At least a first reinforcing member 116 is generally embedded in the body 124 proximate the heating element 132 . A second reinforcing member 166 may be disposed within the body 124 on the side of the heating element 132 opposite the first reinforcing member 116 .
  • the reinforcing members 116 and 166 may be comprised of metal, ceramic or other stiffening materials. In one embodiment, the reinforcing members 116 and 166 are comprised of aluminum oxide fibers.
  • the reinforcing members 116 and 166 may be comprised of aluminum oxide fibers combined with aluminum oxide particles, silicon carbide fibers, silicon oxide fibers or similar materials.
  • the reinforcing members 116 and 166 may include loose material or may be a pre-fabricated shape such as a plate.
  • the reinforcing members 116 and 166 may comprise other shapes and geometry.
  • the reinforcing members 116 and 166 have some porosity that allows aluminum to impregnate the members 116 , 166 during a casting process described below.
  • the heating element 132 such as an electrode disposed in the support assembly 138 , is coupled to a power source 130 and controllably heats the support assembly 138 and substrate 140 positioned thereon to a predetermined temperature. Typically, the heating element 132 maintains the substrate 140 at an uniform temperature of about 150 to at least about 460 degrees Celsius.
  • the support assembly 138 has a lower side 126 and an upper side 134 that supports the substrate.
  • the lower side 126 has a stem cover 144 coupled thereto.
  • the stem cover 144 generally is an aluminum ring coupled to the support assembly 138 that provides a mounting surface for the attachment of a stem 142 thereto.
  • the stem 142 extends from the stem cover 144 and couples the support assembly 138 to a lift system (not shown) that moves the support assembly 138 between an elevated position (as shown) and a lowered position.
  • a bellows 146 provides a vacuum seal between the process volume 112 and the atmosphere outside the chamber 102 while facilitating the movement of the support assembly 138 .
  • the stem 142 additionally provides a conduit for electrical and thermocouple leads between the support assembly 138 and other components of the system 100 .
  • the support assembly 138 generally is grounded such that RF power supplied by a power source 122 to the distribution plate 118 (or other electrode positioned within or near the lid assembly of the chamber) may excite the gases disposed in the process volume 112 between the support assembly 138 and the distribution plate 118 .
  • the RF power from the power source 122 is generally selected commensurate with the size of the substrate to drive the chemical vapor deposition process.
  • the support assembly 138 additionally supports a circumscribing shadow frame 148 .
  • the shadow frame 148 prevents deposition at the edge of the substrate 140 and support assembly 138 so that the substrate does not stick to the support assembly 138 .
  • the support assembly 138 has a plurality of holes 128 disposed therethrough that accept a plurality of lift pins 150 .
  • the lift pins 150 are typically comprised of ceramic or anodized aluminum.
  • the lift pins 150 have first ends 160 that are substantially flush with or slightly recessed from an upper side 134 of the support assembly 138 when the lift pins 150 are in a normal position (i.e., retracted relative to the support assembly 138 ).
  • the first ends 160 are generally flared to prevent the lift pins 150 from falling through the holes 128 .
  • the lift pins 150 have a second end 164 that extends beyond the lower side 126 of the support assembly 138 .
  • the lift pins 150 may be actuated relative to the support assembly 138 by a lift plate 154 to project from the upper side 134 , thereby placing the substrate in a spaced-apart relation to the support assembly 138 .
  • the lift plate 154 is disposed proximate the lower side 126 of the support surface.
  • the lift plate 154 is connected to the actuator by a collar 156 that circumscribes a portion of the stem 142 .
  • the bellows 146 includes an upper portion 168 and a lower portion 170 that allow the stem 142 and collar 156 to move independently while maintaining the isolation of the process volume 112 from the environment outside the chamber 102 .
  • the lift plate 154 is actuated to cause the lift pins 150 to extend from the upper side 134 as the support assembly 138 and the lift plate 154 move closer together relative to one another.
  • FIG. 2 is a partial sectional view of one another embodiment of a support assembly 200 .
  • the support assembly 200 includes an aluminum body 202 substantially covered with an anodized coating 210 .
  • the body 202 may be comprised of one or more coupled members or an unitary casted body having the heating element 132 embedded therein. Examples of substrate support assemblies that may be adapted to benefit from the invention are described in U.S. patent application Ser. Nos. 10/308,385 filed Dec. 2, 2002, and 09/921,104 filed Aug. 1, 2001, both of which are hereby incorporated by reference in there entireties.
  • the body 202 generally includes a substrate support surface 204 and an opposing mounting surface 206 .
  • the mounting surface 206 is coupled to the stem 142 (seen in FIG. 1).
  • the anodized coating 210 covers at least the support surface 204 of the body 202 and provides a separating layer between the substrate 140 and the support surface 204 .
  • the coating 210 includes an outer surface 212 and an inner surface 214 .
  • the inner surface 214 is generally disposed directly on the body 202 .
  • the anodized coating has a thickness of between about 0.3 to about 2.16 mils. Anodized coatings having a thickness falling outside of this range tend to either fail during temperature cycling or do not sufficiently reduce spotting in SiN, ⁇ Si and n+ ⁇ Si large area films formed by PECVD deposition.
  • a portion 218 of the outer surface 212 positioned above the substrate support surface 204 has a geometry configured to support the substrate 140 thereon.
  • the portion 218 of the outer surface 212 has a surface finish 216 of a predefined roughness that promotes uniform thickness of films deposited on the substrate 140 .
  • the surface finish 216 has a roughness of about 80 to about 200 micro-inches.
  • the surface finish 216 advantageously results in improved film thickness uniformity and particularly has been found to substantially eliminate local thickness non-uniformity (spots of thin deposition) without conditioning (e.g., aging) the substrate support.
  • the elimination of substrate support conditioning conserves both time and materials normally consumed in a plasma aging process and eliminates vacuum purges between cycles, the elimination of which results in improved system throughput.
  • the surface finish 216 has a roughness of about 130 micro-inches.
  • the surface finish 216 of the anodized coating 210 may be achieved by treating at least a portion 220 of the outer substrate support surface 204 underlying the substrate 140 and/or by treating at least the anodized coating 210 that supports the substrate 140 (to obtain a pre-defined surface finish 208 ).
  • the surface finish 208 of the substrate support surface 204 may be formed in a number of manners, including bead blasting, abrasive blasting, grinding, embossing, sanding, texturing, etching or other method for providing a pre-defined surface roughness.
  • the surface finish 208 of the support surface 204 of the body 202 is about 88 to about 230 micro-inches. In another embodiment, the surface finish 208 is about 145 micro-inches.
  • a strip 224 of the support surface 204 bounding the portion 220 positioned out from under the substrate 140 may be left untreated to minimize the fabrication costs.
  • the strip 222 of the anodized coating 210 has a smoother surface finish than the portion 218 of the coating 210 it bounds.
  • FIG. 3 depicts one embodiment of a method 300 for fabricating the support assembly 138 .
  • the method begins at step 302 by preparing the support surface 204 of the body 202 .
  • the preparing step 302 generally entails working or otherwise treating the support surface 204 so that the finish 208 is between about 80 to about 200 micro-inches.
  • the preparing step 302 may include bead blasting, abrasive blasting, grinding, embossing, sanding, texturing, etching or other method for providing a pre-defined surface roughness, for example, about 130 micro-inches.
  • the substrate support surface 204 is bead blasted to a pre-determined surface finish.
  • Bead blasting may include impacting the body 202 with a ceramic or oxide bead.
  • the bead is aluminum oxide, having an average diameter of about 125 to about 375 micron.
  • the beads are provided through a nozzle having an exit velocity sufficient to produce a surface finish 208 of about 88 to about 230 micro-inches.
  • the anodizing step 304 generally includes applying an anodized layer having a thickness between about 0.3 to about 2.16 mils.
  • the resultant surface finish 216 on the outer surface 212 of the anodized coating 212 is about 80 to about 200 micro-inches, and in one embodiment is about 130 micro-inches.
  • FIG. 4 depicts another embodiment of a method 400 of fabricating a support assembly 138 .
  • the method begins at step 402 by anodizing the aluminum body 202 .
  • at step 404 at least a portion 218 of the outer surface 212 of the anodized coating 210 is treated to provide a roughened surface finish 216 .
  • other portions of the outer surface 212 may be treated.
  • the treating step 404 may include bead blasting, abrasive blasting, grinding, embossing, sanding, texturing, etching or other method for providing a pre-defined surface roughness.
  • the treating step 404 results in a surface finish of the outer surface of about between about 80 to about 200 micro-inches.
  • FIG. 5 depicts a partial sectional view of another embodiment of a support assembly 500 configured to enhance uniform deposition thickness.
  • the support assembly 500 includes an aluminum support body 502 substantially encapsulated by an anodized coating 506 .
  • a heating element 504 is coupled to the support body 502 to control the temperature of the substrate 140 positioned on the upper surface of the support assembly 500 .
  • the heating element 504 may be a resistive heater or other temperature control device coupled to or disposed against the body 502 .
  • a lower portion 512 of the body 502 may be free from anodization to provide direct contact between the heating element 504 and the body 502 .
  • an intervening layer (not shown) of thermally conductive material may be disposed between the heating element 504 and the lower portion 512 of the body 502 .
  • An upper portion 508 of the anodized coating 506 that supports the substrate 140 has a surface finish 510 configured to enhance uniform deposition of films on the substrate 140 .
  • the surface finish 510 has a roughness between about 80 to about 200 micro-inches.
  • the surface finish 510 may be created through a number of methods, including the methods described above.
  • FIG. 6 depicts another embodiment of a heater assembly 600 .
  • the heater assembly 600 includes an aluminum body 602 having an anodized coating 606 at least partially formed thereon.
  • a heating element 604 i.e., a conduit through which a temperature-controlled fluid is circulated, is disposed against a bottom surface of the body 602 to facilitate temperature control of the substrate 140 .
  • a thermally conductive plate 614 may be disposed between the heating element 604 and the body 602 in order to enhance temperature uniformity between the heating element 604 and the body 602 .
  • the intervening layer 614 is a copper plate.
  • a clamp plate 608 is coupled to the body 602 by a plurality of fasteners 610 (one of which is shown in FIG. 6) that thread into a threaded hole 612 formed in the body 602 .
  • the clamp plate 608 sandwiches the heating element 604 with the body 602 , thereby enhancing heat transfer.
  • a portion 620 of the anodized coating 606 that supports the substrate 140 has a surface finish 622 configured to enhance uniform deposition of films on the substrate 140 .
  • the surface finish 622 may be created similar to that described above.
  • a support assembly that enhances uniform deposition of films disposed on a large area substrate is provided. At least a portion of an anodized coating covering the aluminum body of the support assembly which supports the substrate is textured to a pre-determined surface roughness that enhances deposition uniformity, thereby substantially eliminating time-consuming aging of the support assembly and its associated costs.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
US10/435,182 2003-05-09 2003-05-09 Anodized substrate support Abandoned US20040221959A1 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
US10/435,182 US20040221959A1 (en) 2003-05-09 2003-05-09 Anodized substrate support
TW093112801A TW200507157A (en) 2003-05-09 2004-05-06 Anodized substrate support
KR1020040032489A KR20040096785A (ko) 2003-05-09 2004-05-08 양극처리된 기판 지지부
CNB2004100347390A CN100385640C (zh) 2003-05-09 2004-05-09 阳极化衬底支撑件
EP04011066A EP1475460A1 (de) 2003-05-09 2004-05-10 Anodisierte Substratauflage
JP2004140365A JP2005051200A (ja) 2003-05-09 2004-05-10 メッキ処理された基板支持体
US11/182,168 US8372205B2 (en) 2003-05-09 2005-07-15 Reducing electrostatic charge by roughening the susceptor
US11/406,136 US7732010B2 (en) 2003-05-09 2006-04-18 Method for supporting a glass substrate to improve uniform deposition thickness
KR1020060070677A KR20060100302A (ko) 2003-05-09 2006-07-27 양극처리된 기판 지지부
JP2009149983A JP2009239300A (ja) 2003-05-09 2009-06-24 陽極酸化処理された基板支持体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/435,182 US20040221959A1 (en) 2003-05-09 2003-05-09 Anodized substrate support

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/182,168 Continuation-In-Part US8372205B2 (en) 2003-05-09 2005-07-15 Reducing electrostatic charge by roughening the susceptor
US11/406,136 Continuation US7732010B2 (en) 2003-05-09 2006-04-18 Method for supporting a glass substrate to improve uniform deposition thickness

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US20040221959A1 true US20040221959A1 (en) 2004-11-11

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US10/435,182 Abandoned US20040221959A1 (en) 2003-05-09 2003-05-09 Anodized substrate support
US11/406,136 Active 2025-04-26 US7732010B2 (en) 2003-05-09 2006-04-18 Method for supporting a glass substrate to improve uniform deposition thickness

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US11/406,136 Active 2025-04-26 US7732010B2 (en) 2003-05-09 2006-04-18 Method for supporting a glass substrate to improve uniform deposition thickness

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US (2) US20040221959A1 (de)
EP (1) EP1475460A1 (de)
JP (2) JP2005051200A (de)
KR (2) KR20040096785A (de)
CN (1) CN100385640C (de)
TW (1) TW200507157A (de)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050037626A1 (en) * 2003-08-14 2005-02-17 Asm Japan K.K./ Semiconductor substrate supporting apparatus
US20060032586A1 (en) * 2003-05-09 2006-02-16 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US20060185795A1 (en) * 2003-05-09 2006-08-24 Applied Materials, Inc. Anodized substrate support
JP2006241589A (ja) * 2005-01-18 2006-09-14 Applied Materials Inc 多層コーティングを有する耐食アルミニウムコンポーネント
US20070178810A1 (en) * 2006-01-27 2007-08-02 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20070202636A1 (en) * 2006-02-22 2007-08-30 Applied Materials, Inc. Method of controlling the film thickness uniformity of PECVD-deposited silicon-comprising thin films
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
US20080289687A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Methods for depositing a silicon layer on a laser scribed transmitting conductive oxide layer suitable for use in solar cell applications
US20090184093A1 (en) * 2008-01-21 2009-07-23 Abhi Desai High temperature fine grain aluminum heater
US20090238734A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Susceptor with roll-formed surface and method for making same
US20140027289A1 (en) * 2012-07-27 2014-01-30 Applied Materials, Inc. Roughened substrate support
CN103956349A (zh) * 2014-05-20 2014-07-30 株洲南车时代电气股份有限公司 功率半导体芯片的铜金属化结构及其制作方法
US20150132602A1 (en) * 2013-11-13 2015-05-14 Applied Materials, Inc. High purity metallic top coat for semiconductor manufacturing components
US9624593B2 (en) 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US9850591B2 (en) 2013-03-14 2017-12-26 Applied Materials, Inc. High purity aluminum top coat on substrate
US20180019101A1 (en) * 2016-07-12 2018-01-18 Abm Co., Ltd. Metal component and manufacturing method thereof and process chamber having the metal component
CN109881184A (zh) * 2019-03-29 2019-06-14 沈阳拓荆科技有限公司 具有静电力抑制的基板承载装置
US10876218B2 (en) 2016-03-17 2020-12-29 Asm Ip Holding B.V. Substrate supporting plate, thin film deposition apparatus including the same, and thin film deposition method
US11330673B2 (en) 2017-11-20 2022-05-10 Applied Materials, Inc. Heated substrate support

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI287279B (en) * 2004-09-20 2007-09-21 Applied Materials Inc Diffuser gravity support
TWI375295B (en) * 2005-07-15 2012-10-21 Applied Materials Inc Reducing electrostatic charge by roughening the susceptor
KR100812047B1 (ko) * 2006-08-14 2008-03-10 삼성에스디아이 주식회사 기판 구동부 및 이를 이용한 기판 이동 방법
US7959735B2 (en) * 2007-02-08 2011-06-14 Applied Materials, Inc. Susceptor with insulative inserts
FR2922899B1 (fr) * 2007-10-26 2010-11-26 Univ Toulouse Procede de fabrication d'une structure poreuse ordonnee a partir d'un substrat d'aluminium
US20100000684A1 (en) * 2008-07-03 2010-01-07 Jong Yong Choi Dry etching apparatus
WO2010045151A2 (en) * 2008-10-16 2010-04-22 Applied Materials, Inc. Textured platen
US10392718B2 (en) 2009-09-04 2019-08-27 Apple Inc. Anodization and polish surface treatment
WO2012057963A2 (en) * 2010-10-28 2012-05-03 Applied Materials, Inc. High purity aluminum coating hard anodization
JP2012222287A (ja) * 2011-04-13 2012-11-12 Shimadzu Corp プラズマｃｖｄ成膜装置および基板搭載装置
US10393409B2 (en) * 2012-10-01 2019-08-27 Forced Physics, Llc Device and method for temperature control
US9975320B2 (en) 2014-01-13 2018-05-22 Applied Materials, Inc. Diffusion bonded plasma resisted chemical vapor deposition (CVD) chamber heater
JP6170029B2 (ja) * 2014-11-07 2017-07-26 トヨタ自動車株式会社 遮熱膜の形成方法
CN107201507B (zh) * 2016-03-17 2019-09-17 Asm知识产权私人控股有限公司 衬底支撑板和包含其的薄膜沉积设备
US10914114B2 (en) * 2018-07-06 2021-02-09 Guardian Glass, LLC Electric potentially-driven shade including shutter supporting surface-modified conductive coating, and/or method of making the same
US11521834B2 (en) * 2020-08-26 2022-12-06 Tokyo Electron Limited Plasma processing systems and methods for chemical processing a substrate

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801785A (en) * 1986-01-14 1989-01-31 Raychem Corporation Electrical devices
US4974369A (en) * 1990-06-28 1990-12-04 William Dixon Two-dimensionally grooved sanding pad
US5104514A (en) * 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
US5675471A (en) * 1994-07-19 1997-10-07 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US6063203A (en) * 1997-06-06 2000-05-16 Asm Japan K.K. Susceptor for plasma CVD equipment and process for producing the same
US6064031A (en) * 1998-03-20 2000-05-16 Mcdonnell Douglas Corporation Selective metal matrix composite reinforcement by laser deposition
US6159301A (en) * 1997-12-17 2000-12-12 Asm Japan K.K. Substrate holding apparatus for processing semiconductor
US6196001B1 (en) * 1999-10-12 2001-03-06 Alliedsignal Inc. Environment controlled WIP cart
US6343784B1 (en) * 1998-09-25 2002-02-05 Commissariat A L'energie Atomique Device allowing the treatment of a substrate in a machine provided for the treatment of bigger substrates and a system of mounting a substrate in this device
US20020063108A1 (en) * 2000-10-10 2002-05-30 Wang Jian Ping Methods for producing thin film magnetic devices having increased orientation ratio
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US20020176219A1 (en) * 2001-02-27 2002-11-28 Katsushi Sakaue Electrostatic chuck
US20030010446A1 (en) * 1999-04-16 2003-01-16 Morio Kajiyama Method of manufacturing a processing apparatus

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3019522A (en) 1958-06-23 1962-02-06 John M Bluth Reformation of metallic surfaces
US3616310A (en) 1969-03-10 1971-10-26 Kaiser Aluminium Chem Corp Aluminum-anodizing process
JPS59117675U (ja) 1983-01-24 1984-08-08 旭可鍛鉄株式会社 アルミニウム又はその合金における陽極酸化皮膜の構造
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
DE3714517A1 (de) * 1987-04-30 1988-11-17 Oberdorfer Fa F Fadentrenner fuer nahtmaschinen, insbesondere zum nahten von entwaesserungssieben, trockensieben, filzen u. dgl.
US4862799A (en) 1987-11-13 1989-09-05 Rockwell International Corporation Copper coated anodized aluminum ink metering roller
US5314601A (en) 1989-06-30 1994-05-24 Eltech Systems Corporation Electrodes of improved service life
JPH0686662B2 (ja) 1989-11-02 1994-11-02 イビデン株式会社 Ｃｖｄ用サセプター
US5104014A (en) * 1990-06-28 1992-04-14 John F. Flynn Trapunto rod to stuff quilted items
US5395342A (en) * 1990-07-26 1995-03-07 Yoon; Inbae Endoscopic portal
JP2748181B2 (ja) * 1990-07-26 1998-05-06 キヤノン株式会社 ウエハチャック
SU1797027A1 (ru) 1990-07-27 1993-02-23 Ni Elektrotekh I Полупроводниковый датчик состава газов и способ его изготовления
JP3142619B2 (ja) * 1991-12-09 2001-03-07 株式会社設備デザイン建築設備士事務所 外装用アルマイト建材の製造方法
US5290424A (en) 1992-01-31 1994-03-01 Aluminum Company Of America Method of making a shaped reflective aluminum strip, doubly-protected with oxide and fluoropolymer coatings
US5401319A (en) 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5401573A (en) 1992-11-30 1995-03-28 Mcdonnell Douglas Corporation Protection of thermal control coatings from ultraviolet radiation
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
FR2714234B1 (fr) * 1993-12-16 1996-08-23 Telemecanique Système de contrôle d'alimentation d'un moteur asynchrone.
US20020148941A1 (en) 1994-02-17 2002-10-17 Boris Sorokov Sputtering method and apparatus for depositing a coating onto substrate
JP3176219B2 (ja) 1994-05-31 2001-06-11 京セラ株式会社 静電チャック
EP0693709A1 (de) * 1994-07-18 1996-01-24 Minnesota Mining And Manufacturing Company Fluoropolymeren und fluorierte Tenside zur Verbesserung des antistatischen Verhaltens von Materialien und lichtempfindliches Material mit verbessertem antistatischen Verhalten
US5756222A (en) 1994-08-15 1998-05-26 Applied Materials, Inc. Corrosion-resistant aluminum article for semiconductor processing equipment
US5677253A (en) * 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
US5804253A (en) 1995-07-17 1998-09-08 Kanegafuchi Chemical Ind. Co., Ltd. Method for adhering or sealing
US6355554B1 (en) 1995-07-20 2002-03-12 Samsung Electronics Co., Ltd. Methods of forming filled interconnections in microelectronic devices
US6077781A (en) 1995-11-21 2000-06-20 Applied Materials, Inc. Single step process for blanket-selective CVD aluminum deposition
JPH09168171A (ja) * 1995-12-14 1997-06-24 Semiconductor Energy Lab Co Ltd 表示装置及びその表示システム
EP0803900A3 (de) * 1996-04-26 1999-12-29 Applied Materials, Inc. Oberflächenpräparation zur Erhöhung der Haftfähigkeit einer dielektrischen Schicht
JPH09323234A (ja) 1996-06-05 1997-12-16 Nippon Cement Co Ltd 静電チャック及びその製造方法
US5856236A (en) 1996-06-14 1999-01-05 Micron Technology, Inc. Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer
US5916454A (en) 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
US6007673A (en) 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US6537905B1 (en) 1996-12-30 2003-03-25 Applied Materials, Inc. Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug
US5858464A (en) 1997-02-13 1999-01-12 Applied Materials, Inc. Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers
FR2764310B1 (fr) 1997-06-10 1999-07-09 Commissariat Energie Atomique Materiau multicouches a revetement anti-erosion, anti-abrasion, et anti-usure sur substrat en aluminium, en magnesium ou en leurs alliages
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
JP3588253B2 (ja) * 1998-06-04 2004-11-10 京セラ株式会社 静電チャック
US6117772A (en) 1998-07-10 2000-09-12 Ball Semiconductor, Inc. Method and apparatus for blanket aluminum CVD on spherical integrated circuits
DE19839997C1 (de) * 1998-09-02 2000-06-21 Siemens Ag Elektronische Schaltungsanordnung
US6081874A (en) * 1998-09-29 2000-06-27 International Business Machines Corporation Non-uniform memory access (NUMA) data processing system that speculatively issues requests on a node interconnect
US6726304B2 (en) 1998-10-09 2004-04-27 Eastman Kodak Company Cleaning and repairing fluid for printhead cleaning
JP3438625B2 (ja) * 1998-12-10 2003-08-18 マックス株式会社 鉄筋結束用リール巻きワイヤの緩み防止方法
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
TW492075B (en) 1999-04-06 2002-06-21 Tokyo Electron Ltd Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage
TW465017B (en) 1999-04-13 2001-11-21 Applied Materials Inc A corrosion-resistant protective coating for an apparatus and method for processing a substrate
US6322712B1 (en) 1999-09-01 2001-11-27 Micron Technology, Inc. Buffer layer in flat panel display
US6649031B1 (en) 1999-10-08 2003-11-18 Hybrid Power Generation Systems, Llc Corrosion resistant coated fuel cell bipolar plate with filled-in fine scale porosities and method of making the same
JP2001117079A (ja) 1999-10-18 2001-04-27 Ibiden Co Ltd 液晶表示板用の基板の加熱装置
US6207558B1 (en) 1999-10-21 2001-03-27 Applied Materials, Inc. Barrier applications for aluminum planarization
US6775873B2 (en) 2000-02-09 2004-08-17 Eugene H. Luoma Apparatus for removing hair from a drain
US6403479B1 (en) 2000-03-17 2002-06-11 Hitachi, Ltd. Process for producing semiconductor and apparatus for production
JP2001298013A (ja) 2000-04-13 2001-10-26 Sharp Corp 基板処理装置
JP2001355072A (ja) * 2000-06-13 2001-12-25 Anelva Corp 基板処理装置
US6470508B2 (en) * 2000-11-08 2002-10-29 Watkins Manufacturing Corporation Air check valve system for a spa
US6554907B2 (en) 2001-01-02 2003-04-29 Applied Materials, Inc. Susceptor with internal support
TWI272689B (en) 2001-02-16 2007-02-01 Tokyo Electron Ltd Method and apparatus for transferring heat from a substrate to a chuck
JP4359001B2 (ja) 2001-03-02 2009-11-04 本田技研工業株式会社 陽極酸化膜改質方法、陽極酸化膜構造及びアルミニウム合金製船外機
US6458683B1 (en) 2001-03-30 2002-10-01 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming aluminum bumps by CVD and wet etch
JP2002313781A (ja) 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板処理装置
KR100422446B1 (ko) * 2001-07-12 2004-03-12 삼성전자주식회사 건식식각장치의 이그저스트링
US20030047464A1 (en) 2001-07-27 2003-03-13 Applied Materials, Inc. Electrochemically roughened aluminum semiconductor processing apparatus surfaces
KR100789453B1 (ko) 2001-07-30 2008-01-02 엘지.필립스 엘시디 주식회사 플라즈마 화학기상증착장비의 프로세스 챔버
US6510888B1 (en) * 2001-08-01 2003-01-28 Applied Materials, Inc. Substrate support and method of fabricating the same
TW589401B (en) 2001-10-24 2004-06-01 Hon Hai Prec Ind Co Ltd The surface treatment of aluminum article
JP3635463B2 (ja) 2001-11-27 2005-04-06 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7033447B2 (en) 2002-02-08 2006-04-25 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US8067067B2 (en) 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US6776873B1 (en) 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US6659331B2 (en) 2002-02-26 2003-12-09 Applied Materials, Inc Plasma-resistant, welded aluminum structures for use in semiconductor apparatus
US6565984B1 (en) 2002-05-28 2003-05-20 Applied Materials Inc. Clean aluminum alloy for semiconductor processing equipment
KR100557882B1 (ko) 2002-10-10 2006-03-10 김종균 미닫이 문 개폐장치
US6884336B2 (en) 2003-01-06 2005-04-26 General Motors Corporation Color finishing method
KR200312050Y1 (ko) 2003-01-29 2003-05-01 이기봉 차량 시거잭을 이용한 레이저 디텍터
US8372205B2 (en) 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US20040221959A1 (en) 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US7732056B2 (en) 2005-01-18 2010-06-08 Applied Materials, Inc. Corrosion-resistant aluminum component having multi-layer coating
KR200432489Y1 (ko) 2006-09-22 2006-12-04 김원석 논 수위조절장치

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801785A (en) * 1986-01-14 1989-01-31 Raychem Corporation Electrical devices
US4974369A (en) * 1990-06-28 1990-12-04 William Dixon Two-dimensionally grooved sanding pad
US5104514A (en) * 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
US5675471A (en) * 1994-07-19 1997-10-07 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US6063203A (en) * 1997-06-06 2000-05-16 Asm Japan K.K. Susceptor for plasma CVD equipment and process for producing the same
US6159301A (en) * 1997-12-17 2000-12-12 Asm Japan K.K. Substrate holding apparatus for processing semiconductor
US6064031A (en) * 1998-03-20 2000-05-16 Mcdonnell Douglas Corporation Selective metal matrix composite reinforcement by laser deposition
US6343784B1 (en) * 1998-09-25 2002-02-05 Commissariat A L'energie Atomique Device allowing the treatment of a substrate in a machine provided for the treatment of bigger substrates and a system of mounting a substrate in this device
US20030010446A1 (en) * 1999-04-16 2003-01-16 Morio Kajiyama Method of manufacturing a processing apparatus
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6196001B1 (en) * 1999-10-12 2001-03-06 Alliedsignal Inc. Environment controlled WIP cart
US20020063108A1 (en) * 2000-10-10 2002-05-30 Wang Jian Ping Methods for producing thin film magnetic devices having increased orientation ratio
US20020176219A1 (en) * 2001-02-27 2002-11-28 Katsushi Sakaue Electrostatic chuck

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732010B2 (en) 2003-05-09 2010-06-08 Applied Materials, Inc. Method for supporting a glass substrate to improve uniform deposition thickness
US20060032586A1 (en) * 2003-05-09 2006-02-16 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US20060185795A1 (en) * 2003-05-09 2006-08-24 Applied Materials, Inc. Anodized substrate support
US8372205B2 (en) 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US20050037626A1 (en) * 2003-08-14 2005-02-17 Asm Japan K.K./ Semiconductor substrate supporting apparatus
JP2006241589A (ja) * 2005-01-18 2006-09-14 Applied Materials Inc 多層コーティングを有する耐食アルミニウムコンポーネント
US20070178810A1 (en) * 2006-01-27 2007-08-02 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20070202636A1 (en) * 2006-02-22 2007-08-30 Applied Materials, Inc. Method of controlling the film thickness uniformity of PECVD-deposited silicon-comprising thin films
US20100144160A1 (en) * 2006-12-01 2010-06-10 Applied Materials, Inc. Plasma reactor substrate mounting surface texturing
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
US7964430B2 (en) 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
US20080289687A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Methods for depositing a silicon layer on a laser scribed transmitting conductive oxide layer suitable for use in solar cell applications
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
US20090184093A1 (en) * 2008-01-21 2009-07-23 Abhi Desai High temperature fine grain aluminum heater
US9917001B2 (en) 2008-01-21 2018-03-13 Applied Materials, Inc. High temperature fine grain aluminum heater
US20090238734A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Susceptor with roll-formed surface and method for making same
US9243328B2 (en) * 2008-03-20 2016-01-26 Applied Materials, Inc. Susceptor with roll-formed surface and method for making same
US20140027289A1 (en) * 2012-07-27 2014-01-30 Applied Materials, Inc. Roughened substrate support
US10434629B2 (en) 2012-07-27 2019-10-08 Applied Materials, Inc. Roughened substrate support
US9850591B2 (en) 2013-03-14 2017-12-26 Applied Materials, Inc. High purity aluminum top coat on substrate
US10774436B2 (en) 2013-03-14 2020-09-15 Applied Materials, Inc. High purity aluminum top coat on substrate
US9624593B2 (en) 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US9663870B2 (en) * 2013-11-13 2017-05-30 Applied Materials, Inc. High purity metallic top coat for semiconductor manufacturing components
US9879348B2 (en) 2013-11-13 2018-01-30 Applied Materials, Inc. High purity metallic top coat for semiconductor manufacturing components
US10260160B2 (en) 2013-11-13 2019-04-16 Applied Materials, Inc. High purity metallic top coat for semiconductor manufacturing components
US20150132602A1 (en) * 2013-11-13 2015-05-14 Applied Materials, Inc. High purity metallic top coat for semiconductor manufacturing components
CN103956349A (zh) * 2014-05-20 2014-07-30 株洲南车时代电气股份有限公司 功率半导体芯片的铜金属化结构及其制作方法
US11965262B2 (en) 2016-03-17 2024-04-23 Asm Ip Holding B.V. Substrate supporting plate, thin film deposition apparatus including the same, and thin film deposition method
US10876218B2 (en) 2016-03-17 2020-12-29 Asm Ip Holding B.V. Substrate supporting plate, thin film deposition apparatus including the same, and thin film deposition method
US20220336192A1 (en) * 2016-07-12 2022-10-20 Abm Co., Ltd. Metal component and manufacturing method thereof and process chamber having the metal component
US20180019101A1 (en) * 2016-07-12 2018-01-18 Abm Co., Ltd. Metal component and manufacturing method thereof and process chamber having the metal component
US11417503B2 (en) * 2016-07-12 2022-08-16 Abm Co., Ltd. Metal component and manufacturing method thereof and process chamber having the metal component
US11330673B2 (en) 2017-11-20 2022-05-10 Applied Materials, Inc. Heated substrate support
CN109881184A (zh) * 2019-03-29 2019-06-14 沈阳拓荆科技有限公司 具有静电力抑制的基板承载装置

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EP1475460A1 (de) 2004-11-10
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