US20040217478A1 - Semiconductor device and manufacturing process therefor - Google Patents
Semiconductor device and manufacturing process therefor Download PDFInfo
- Publication number
- US20040217478A1 US20040217478A1 US10/807,248 US80724804A US2004217478A1 US 20040217478 A1 US20040217478 A1 US 20040217478A1 US 80724804 A US80724804 A US 80724804A US 2004217478 A1 US2004217478 A1 US 2004217478A1
- Authority
- US
- United States
- Prior art keywords
- film
- metal
- semiconductor device
- forming
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 60
- 239000000203 mixture Substances 0.000 claims abstract description 39
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 17
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims description 73
- 238000000151 deposition Methods 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 59
- 230000008021 deposition Effects 0.000 claims description 57
- 239000007789 gas Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 40
- 238000000231 atomic layer deposition Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000002019 doping agent Substances 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910004166 TaN Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 18
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000010926 purge Methods 0.000 description 13
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 229910003134 ZrOx Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910007932 ZrCl4 Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- -1 nitrogen-containing compound Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- ILCNWXZDEDUORE-UHFFFAOYSA-N CC(C)C(C)(C)N[Zr] Chemical compound CC(C)C(C)(C)N[Zr] ILCNWXZDEDUORE-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
- H01L21/3142—Deposition using atomic layer deposition techniques [ALD] of nano-laminates, e.g. alternating layers of Al203-Hf02
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31641—Deposition of Zirconium oxides, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
Definitions
- This invention relates to a semiconductor device comprising a metal-compound film on a semiconductor substrate and a manufacturing process therefore.
- a high dielectric constant (so-called “high-k”) film has been recently investigated as a component in a semiconductor device.
- Representative examples of a high-k material include Zr- and Hf-containing oxides. Such a material can be used for a dielectric film in a capacitor or a gate insulating film in an MOSFET to achieve good device performance which has not been obtained by the prior art.
- Japanese patent application NO. 2002-373945 discloses a capacitor comprising such a high-k material.
- a dielectric film made of the high-k material is formed by atomic layer deposition (ALD).
- ALD atomic layer deposition
- the ALD process in which one-atomic layers are deposited one by one has advantages that a deposition process may be conducted at a lower temperature and that a film with good film properties may be obtained.
- FIG. 2 shows a cross-sectional view of the capacitor described in Japanese patent application NO. 2002-373945.
- a device separating region 22 while in a device region is formed a transistor consisting of a gate electrode 23 and a source/drain diffusion layer 24 .
- a source/drain diffusion layer 24 On both sides of the gate electrode 23 , there are formed side walls 25 .
- An unshown cobalt silicide film covers over the gate electrode 23 and the source/drain diffusion layer 24 .
- a bit line 29 via a cell contact 28 On the transistor is formed a bit line 29 via a cell contact 28 . On the transistor is formed a cylindrical MIM capacitor via a capacitor contact 31 .
- the capacitor has a structure that there are laminated a lower electrode 34 , a dielectric film 35 and an upper electrode 36 are deposited, on which a tungsten film 37 is formed.
- An insulating film for the dielectric film 35 is made of a metal material such as ZrO 2 .
- the dielectric film 35 is deposited by atomic layer deposition.
- deposition gas used generally comprises ZrCl 4 and H 2 O.
- the above reference has also described that a ZrO 2 layer can be formed by the method.
- Any deposition process according to the prior art cannot adequately meet the needs.
- a high-k material for a gate insulating film in a transistor.
- a film can be thin as calculated as a silicon oxide film even when making a gate insulating film thicker to some extent, so that a physically and structurally stable gate insulating film can be achieved.
- dopants introduced in a gate electrode may sometimes penetrate the gate insulating film to reach a channel region. Dopant penetration may significantly deteriorate reliability of a semiconductor device without transistor properties as designed. In designing a transistor comprising a high-k gate insulating film, adequately preventing such dopant penetration is an important technical problem.
- an objective of this invention is to give a semiconductor device comprising a film made of a high dielectric constant material with a reduced leak current in the film and with improved device reliability.
- Another objective of this invention is to provide a capacitor with a higher capacity and a reduced leak current.
- a further objective of this invention is to provide a transistor comprising a gate insulating film with a smaller thickness as calculated as a silicon oxide film and with improved reliability.
- This invention provides a semiconductor device comprising a semiconductor substrate and a metal-compound film thereon, wherein the metal-compound film has a composition represented by the formula:
- This invention also provides a semiconductor device comprising a semiconductor substrate, a pair of electrodes thereon and a capacitor comprising a dielectric film between the electrodes, wherein the dielectric film comprises a metal-compound film having a composition represented by the formula:
- the semiconductor device may further comprise a gate electrode formed on the semiconductor substrate; a transistor comprising a source and a drain regions formed in the semiconductor substrate whose surfaces are silicided; and a connecting plug f or connecting the source and the drain regions in the transistor with the capacitor.
- This invention also provides a semiconductor device comprising a semiconductor substrate; a gate insulating film formed on the main surface of the semiconductor substrate; a gate electrode on the gate insulating film; and a source and a drain regions formed on the semiconductor substrate which together sandwich the gate electrode, wherein the gate insulating film comprises a metal-compound film having a composition represented by the formula:
- This invention also provides a process for manufacturing a semiconductor device, comprising the step of forming a metal-compound film having a composition represented by the formula:
- This invention also provides a process for manufacturing a semiconductor device comprising forming a first electrode, a dielectric film and a second electrode on a semiconductor substrate, wherein the step of forming the dielectric film comprises forming a metal-compound film having a composition represented by the formula:
- the process for manufacturing a semiconductor device may further comprise the steps of forming a gate electrode on the semiconductor substrate; introducing a dopant into the main surface of the semiconductor substrate to form a source and a drain regions such that the gate electrode is sandwiched between the regions; siliciding the surfaces of the source and the drain regions; and forming an interlayer insulating film over the gate electrode, the source region and the drain region, then selectively removing the interlayer insulating film to form a contact hole reaching the source and the drain regions, and then filling the contact hole with a metal film to form a connecting plug, wherein the first electrode is formed such that the connecting plug is connected with the first electrode; the dielectric film is formed at 200° C. to 400° C. both inclusive; and the first and the second electrodes are formed at 500° C. or lower.
- This invention also provides a process for manufacturing a semiconductor device comprising the steps of forming a gate insulating film on a semiconductor substrate; forming a gate electrode film on the gate insulating film; shaping the gate insulating film and the gate electrode film into a given shape to form a gate electrode; and introducing a dopant into the main surface of the semiconductor substrate to form a source and a drain regions such that the gate electrode is sandwiched between the regions, wherein the step of forming the gate insulating film comprises forming a metal-compound film having a composition represented by the formula:
- a semiconductor device comprises a metal-compound film represented by the above formula MO x C y N z .
- the metal-compound film comprises carbon and nitrogen within a particular composition range, so that a leak current can be significantly reduced.
- flatness in a film surface can be improved by using a metal-compound film having the above particular composition. It would thus contribute to reduction in a leak current between the metal-compound film and the adjacent film.
- flatness in the surface of the metal-compound film is improved is not clearly understood, it would be speculated that a film composition in which carbon and nitrogen are contained within a particular range may lead to reduction in a size of grains constituting the film, resulting in improved flatness in the film surface.
- a capacitor has a configuration where a dielectric film made of a dielectric is disposed between a pair of metal electrodes, so that a leak current tends to generate in an interface between the different materials.
- surface flatness in a dielectric film comprising the above metal-compound film can be improved, so that a leak current in such an interface may be effectively reduced.
- a process for manufacturing a semiconductor device according to this invention employing chemical vapor deposition, preferably atomic layer deposition may consistently provide a semiconductor device having the above good properties.
- FIG. 1 shows a structure of a capacitor according to an embodiment.
- FIG. 2 shows a structure of a capacitor according to the prior art.
- FIG. 3A and FIG. 3B illustrate a process for manufacturing a capacitor according to an embodiment.
- FIG. 4C and FIG. 4D illustrate a process for manufacturing a capacitor according to an embodiment.
- FIG. 5E and FIG. 5F illustrate a process for manufacturing a capacitor according to an embodiment.
- FIG. 6G and FIG. 6H illustrate a process for manufacturing a capacitor according to an embodiment.
- FIG. 7I and FIG. 7J illustrate a process for manufacturing a capacitor according to an embodiment.
- FIG. 8A and FIG. 8B show exemplary sequences for depositing an oxide film and an oxynitride film, respectively.
- FIG. 9 is a conceptual diagram of a remote plasma.
- FIG. 10 shows a structure of a decoupling capacitor according to an embodiment.
- FIG. 11 shows a structure of a transistor according to an embodiment.
- FIG. 12A, FIG. 12B, FIG. 12C and FIG. 12D illustrate a process for manufacturing a transistor according to an embodiment.
- FIG. 13E and FIG. 13F illustrate a process for manufacturing a transistor according to an embodiment.
- FIG. 14 shows properties of the capacitors evaluated in Examples.
- the formula MO x C y N z may meet the conditions: 0.7 ⁇ 1.85 and 0.05 ⁇ z0.2 to more reliably reduce a leak current in the metal-compound film. Furthermore, 0.1 or less of z indicating a nitrogen ratio may increase a relative oxygen ratio to improve a dielectric constant.
- the metal-compound film defined by the above formula MO x C y N z may contain additional trace elements.
- a semiconductor device of this invention may further comprise a gate electrode formed on a semiconductor substrate; a transistor comprising a source and a drain regions formed in the semiconductor substrate whose surfaces are silicided; and a connecting plug for connecting the source and the drain regions in the transistor with the capacitor. Siliciding the surfaces of the source and the drain regions may reduce a resistance in the source and the drain regions and reduce a contact resistance of the connecting plug with the source and the drain regions, resulting in higher-speed transistor operation.
- the deposition gas may comprise:
- M comprises at least Hf or Zr; and R and R′ independently represent hydrocarbon, so that the metal-compound film having the above particular composition may be consistently provided and contamination with particles derived from the deposition gas may be inhibited, resulting in more improved metal-compound film properties.
- the film after forming the metal-compound film, the film may be annealed in nitrogen or a nitrogen-containing gas, to introduce nitrogen into the film. Such introduction of nitrogen into the metal-compound film can further reduce a leak current.
- the device may further comprise a gate electrode formed on a semiconductor substrate; a transistor comprising a source and a drain regions formed in the semiconductor substrate whose surfaces are silicided; and a connecting plug for connecting the source and the drain regions in the transistor with the capacitor.
- Siliciding the surfaces of the source and the drain regions may reduce a resistance in the source and the drain regions and reduce a contact resistance of the connecting plug with the source and the drain regions, resulting in higher-speed transistor operation.
- silicide aggregation may be caused in a process at an elevated temperature of, for example, 500° C. or higher.
- a dielectric film can be formed by alow-temperature deposition process at 200° C. to 400° C. such as atomic layer deposition, so that such aggregation can be prevented.
- a semiconductor device having such a configuration may be manufactured by the steps of forming a gate electrode on the semiconductor substrate; introducing a dopant into the main surface of the semiconductor substrate to form a source and a drain regions such that the gate electrode is sandwiched between the regions; siliciding the surfaces of the source and the drain regions; and forming an interlayer insulating film over the gate electrode, the source region and the drain region, then selectively removing the interlayer insulating film to form a contact hole reaching the source and the drain regions, and then filling the contact hole with a metal film to form a connecting plug.
- the first electrode is formed such that the connecting plug is connected with the first electrode.
- the first and the second electrodes are formed at 500° C. or lower.
- a lower limit for the temperature may be appropriately selected depending on a deposition method; for example, 100° C. or higher.
- the step of siliciding the surfaces of the source and the drain regions may comprise forming a metal film made of a transition metal adjacent to the source and the drain regions and then heating the film.
- a transition-metal film may include cobalt and nickel films.
- an electrode material is properly selected and the dielectric film is deposited by atomic layer deposition.
- preferable examples of an electrode material include materials containing Ti, W, Pt, Ir, Ru or a nitride thereof.
- FIG. 1 schematically shows a structure of the capacitor according to this embodiment, which a cylinder type MIM capacitor is formed, via a capacitor contact 131 , on a transistor comprising a gate electrode 123 and a source-drain region 124 .
- the capacitor has a structure in which a lower electrode (a first electrode) 140 , a dielectric film 142 , an upper electrode (a second electrode) 144 and a tungsten film are sequentially deposited and these are patterned.
- a bit line 129 is formed on the transistor via a cell contact 128 . Although the bit line 129 and the capacitor contact 131 are drawn in the same cross-sectional view in FIG. 1, it is for the sake of deeper understanding of the whole structure, but actually these are not crossed. In this configuration, there is disposed a bit line 129 in a gap in the region where the capacitor contact 131 is disposed.
- a metal-compound film having such a composition cannot be obtained simply by selecting a deposition gas as appropriate, but can be obtained only by appropriately selecting a deposition gas and optimizing the deposition conditions.
- a capacitor according to this embodiment has a high capacity while a leak current is significantly reduced. There will be described the process for manufacturing a device shown in FIG. 1.
- a transistor is formedas shown in FIG. 3A.
- a silicon substrate 121 On a silicon substrate 121 are formed a device separating region 122 and then a gate electrode 123 via an unshown gate insulating film. Then, a dopant is ion-implanted around the surface of the substrate 121 to form a source-drain region 124 . Then, on the surfaces of the gate electrode 123 and the source-drain region 124 is formed a cobalt film, which is heated to form a cobalt silicide film. On the transistor thus formed is formed an interlayer insulating film 126 .
- the interlayer insulating film 126 is selectively dry-etched to form a contact hole reaching the source-drain region 124 . Then, on the contact hole are formed TiN/Ti as a barrier film and then a tungsten film such that the hole is filled with the latter. The tungsten was then polished by CMP to form a tungsten plug. Thus, cell contacts 127 , 128 are formed as shown in FIG. 3B.
- bit line 129 is sequentially formed on the cell contacts 127 , 128 .
- interlayer insulating film 130 is leveled by CMP (chemical mechanical polishing) (FIG. 4C).
- the interlayer insulating film 130 is dry-etched to form a contact hole reaching the cell contact 127 .
- a tungsten film was deposited to fill the contact hole and CMP was conducted to form a capacitor contact 131 (FIG. 4D).
- the bit line 129 and the capacitor contact 131 are drawn in the same cross-sectional view in FIG. 4D, it is for the sake of deeper understanding of the whole structure, but actually these are not crossed.
- the cylinder 133 may have, for example, an elliptical cylindrical shape with a depth of 300 to 500 nm, a longer axis of 0.3 to 0.5 ⁇ m and a shorter axis of 0.15 to 0.3 ⁇ m.
- a lower electrode 140 is formed by CVD to a film thickness of 5 to 40 nm.
- the inside of the cylinder 133 is filled with a photoresist, the whole surface of the substrate is etched back, and then the photoresist in the inside of the cylinder 133 is removed by oxygen plasma processing and organic stripping. Thus, the lower electrode 140 on the outside of the cylinder 133 is removed (FIG. 6H).
- the dielectric film 142 is formed by atomic layer deposition (ALD).
- a metal source gas is a metal compound represented by the general formula Zr(NRR′) 4 wherein R and R′ independently represent hydrocarbon, preferably straight or branched alkyl.
- R or R′ preferred is alkyl having up to 6 carbon atoms; for example, methyl, ethyl, propyl and tert-butyl.
- Preferable examples of the above source gas include Zr(N(C 2 H 5 ) 2 ) 4 , Zr(N(CH 3 ) 2 ) 4 and Zr(N(CH 3 )(C 2 H 5 )) 4 .
- Such a compound be selected to obtain a film with a flat surface and to prevent particles from contaminating the film, resulting in a dielectric film with a reduced leak current and good film properties.
- An oxidizer gas used in deposition of the dielectric film may be oxygen or an oxygen-containing compound such as NO, NO 2 , N 2 O, H 2 O, O 2 and O 3 .
- NO, NO 2 and N 2 O are preferable, and a combination of a nitriding and an oxidizing gases such as a mixture of NO and NO 2 or NO and O 3 is more preferable.
- Such a gas may be selected to consistently obtain a dielectric film with good film properties. While H 2 O tends to remain in a deposition system in a process employing H 2 O as an oxidizing agent frequently used in the prior art, NO, N 2 O or NO 2 may be easily removed from a deposition system by purging, resulting in an improved production efficiency.
- a ZrO 2 film was deposited to 10 nm by one of the following methods.
- a required deposition time was 20 min and 18 min in Methods 1 and 2, respectively, while being 55 min in Method 3.
- a deposition temperature for the dielectric film 142 is preferably 200° C. to 400° C. both inclusive. At a temperature lower than 200° C., impurities in the ZrO 2 film may increase. At a temperature higher than 400° C., decomposition of Zr(NRR′) 4 may be initiated on a substrate on which deposition occurs to cause contamination with impurities to an unacceptable level. At an excessively higher deposition temperature, a crystal grain size may be increased, leading to an increased leak current.
- a ratio of a metal-containing deposition gas to an oxidizing gas is preferably 1/100 or less for reducing impurities in the film.
- a ratio of NO/N 2 is preferably 1/10,000or more.
- a pressure during deposition is, for example, 10 mtorr to 10 torr.
- a deposition gas may be fed, for example, as shown in FIG. 8A and FIG. 8B.
- FIG. 8A and FIG. 8B show exemplary sequences for depositing an oxide film and an oxynitride film, respectively.
- ammonia is introduced during deposition to form an oxynitride film.
- a “deposition gas” indicates a metal-compound source gas and an “oxidizing agent” indicates oxygen or an oxygen-containing compound gas.
- an oxidizing agent indicates oxygen or an oxygen-containing compound gas.
- NO is fed to remove a functional group having a Zr terminus which has grown on the substrate.
- an inert gas typically Ar or N 2 is fed as a purge gas to remove unreacted NO and reaction byproducts. Then, the purge gas is stopped.
- the deposition gas is preferably the above metal compound represented by Zr(NRR′) 4 wherein R and R′ independently represent straight or branched alkyl.
- a deposition temperature, a deposition pressure, a deposition rate and a deposition gas are selected as appropriate.
- an upper electrode 144 is formed by CVD to a thickness of 5 to 40 nm. Now, the state shown in FIG. 7I is obtained.
- a tungsten film 146 is formed such that the inside of the cylinder 133 is filled.
- a resist film having a given opening is then used as a mask for selective dry etching of the tungsten film 146 to separate devices.
- an MIM type capacitor as shown in FIG. 1 is provided.
- the MIM type capacitor thus formed is a high capacity device because it comprises a dielectric film made of ZrOCN which is a highly insulating material with a higher dielectric constant. Furthermore, since interfaces between the lower electrode and the dielectric film and between the dielectric film and the upper electrode can be stably kept in a good state, reduction in a capacitance value and increase in dielectric film leak can be effectively prevented.
- the dielectric film 142 may be nitrided by a plasma using a nitrogen-containing compound such as N 2 O and NH 3 , to more effectively reduce a leak current in a capacitor.
- a nitrogen-containing compound such as N 2 O and NH 3
- FIG. 9 is a conceptual diagram of a remote plasma.
- a plasma is generated in a plasma generation chamber equipped with a gas inlet, a wave guide and microwave application means, which is placed separately from a deposition chamber where a substrate is disposed.
- the plasma generated is introduced via a quartz tube into the chamber in which the substrate is disposed.
- the surface of the substrate is subjected to plasma processing.
- nitrogen alone is introduced for generating a plasma.
- Such a procedure may be employed to adequately conduct nitriding while preventing the substrate from being damaged.
- the following plasma conditions may be selected.
- Plasma power 400 W to 5,000 W;
- a decoupling capacitor is a high dielectric constant film capacitor formed over an interconnect in an LSI for compensating a voltage reduction induced by a parasitic inductance between a power source and the LSI interconnect.
- a dielectric film in the capacitor is formed by ALD whereby the dielectric film can be deposited at a lower temperature and which can eliminate the need for post-annealing under an oxidizing atmosphere, allowing the MIM type film capacitor to act as a decoupling capacitor between power sources.
- FIG. 10 is a partial cross-sectional view of a semiconductor device according to this embodiment.
- an uppermost interconnect (grounding wire) 201 and an uppermost interconnect (power wire) 202 is formed an interlayer film 205 , on which are sequentially formed a lower electrode 206 , a dielectric film 207 and an upper electrode 208 , to provide a decoupling capacitor 210 .
- the lower electrode 206 and the uppermost interconnect (grounding wire) 201 are connected via a contact plug 203
- the upper electrode 208 and the uppermost interconnect (power wire) 202 are connected via a contact 204 .
- an interlayer film 205 is deposited on uppermost interconnects 201 , 202 in a logic device prepared according to a well-known manufacturing process.
- a contact hole which is then filled by depositing one or two or more of the materials selected from the group consisting of Cu, Al, TiN and W.
- CMP is conducted to form contact plugs 203 , 204 .
- a lower electrode film made of at least one material selected from the group consisting of TiN, Ti, TaN, Ta, W, WN, Pt, Ir and Ru by reactive sputtering or ALD.
- the lower electrode film is shaped into a predetermined shape to form a lower electrode 206 .
- a dielectric film is formed by ALD at a deposition temperature of 200 to 400° C.
- a film thickness is about 2 to 15 nm.
- the procedure for depositing the film and a deposition and an oxidizer gases used are as described in Embodiment 1. Since a metal-compound film having such a particular composition is used as a dielectric film, this embodiment can provide a capacitor with a higher capacity and a reduced leak current.
- a dielectric film 207 After shaping the dielectric film into a desired shape to obtain a dielectric film 207 , on which is deposited an upper electrode film made of at least one material selected from the group consisting of TiN, Ti, TaN, Ta, W, WN, Pt, Ir and Ru by sputtering or ALD. It is then shaped into a desired shape to form an upper electrode 208 to give a film capacitor within the semiconductor device, which acts as a decoupling capacitor.
- the lower electrode is connected to the uppermost interconnect (grounding wire) while the upper electrode is connected to the uppermost interconnect (power wire) in FIG. 10, this invention is not limited to the configuration.
- a configuration with a different connection style where the lower electrode is connected to the uppermost interconnect (power wire) while the upper electrode is connected to the uppermost interconnect (grounding wire), may be, of course, similarly effective.
- the film capacitor acting as a decoupling capacitor is formed right above the uppermost interconnect in the device in FIG. 10, the capacitor is not necessarily to be above the uppermost interconnect, but may be formed in any of the inside and the lower part of the device.
- a dielectric film having a high dielectric constant can be formed by ALD allowing deposition at a lower temperature and eliminating the need for post-annealing under an oxidizing atmosphere, to form a film capacitor within a semiconductor device without property deterioration or yield reduction due to oxidation of an interconnect layer.
- the film capacitor may be used as a decoupling capacitor to solve the problems in a conventional on-chip decoupling capacitor while achieving advantages in an on-chip decoupling capacitor, i. e., a low inductance and a high capacity.
- a film capacitor comprising a dielectric film having the above particular composition can be formed on the uppermost interconnect in a semiconductor device to achieve an on-chip decoupling capacitor with a lower inductance and a higher capacity, which can adequately deal with speeding-up in an LSI.
- FIG. 11 A transistor in FIG. 11 comprises a gate electrode consisting of a gate insulating film consisting of a laminate of a silicon oxynitride film 402 and a metal-compound film 404 on a silicon substrate 400 and a gate electrode 406 made of polysilicon.
- a side wall 410 comprised of a silicon oxide film.
- a source-drain region 412 On the surface of the silicon substrate 400 adjacent to both sides of the gate electrode is formed a source-drain region 412 in which a dopant is dispersed.
- Preferable examples of a source gas for depositing the above metal-compound film include Hf(N(C 2 H 5 ) 2 ) 4 , Hf(N(CH 3 ) 2 ) 4 and Hf(N(CH 3 )(C 2 H 5 )) 4 .
- Such a compound can be selected to more effectively prevent a dopant in the gate electrode from penetrating into the silicon substrate.
- FIG. 11 There will be described a process for manufacturing a transistor shown in FIG. 11 with reference to FIG. 12A, FIG. 12B, FIG. 12C, FIG. 12D, FIG. 13E and FIG. 13F.
- a silicon substrate 400 whose surface has been washed with a given chemical is prepared as shown in FIG. 12A.
- a silicon oxynitride film 402 is deposited by CVD on the main surface of the silicon substrate 400 .
- a metal-compound film 404 is formed by atomic layer deposition.
- a metal source gas in a deposition gas used in the deposition is a metal compound represented by the general formula:
- R and R′ independently represent hydrocarbon, preferably straight or branched alkyl.
- R and R′ are preferably alkyl having up to 6 carbon atoms; for example, methyl, ethyl, propyl and tert-butyl.
- An oxidizer gas used in deposition of the metal-compound film 404 may be oxygen or an oxygen-containing compound such as NO, NO 2, N 2 O, H 2 O, O 2 and O 3 .
- NO, NO 2 and N 2 O are preferable, and a combination of a nitriding and an oxidizing gases such as a mixture of NO and NO 2 or NO and O 3 is more preferable.
- Such a gas may be selected to consistently obtain a dielectric film with good film properties.
- NO, N 2 O or NO 2 may be easily removed from a deposition system by purging, resulting in an improved production efficiency.
- a deposition gas may be fed as described below.
- an inert gas typically Ar or N 2 is fed as a purge gas into the chamber to remove excessive unreacted Hf(N(CH 3 ) (C 2 H 5 )) 4 .
- NO is fed to remove a functional group having a Hf terminus which has grown on the substrate.
- an inert gas typically Ar or N 2 is fed as a purge gas to remove unreacted NO and reaction byproducts. Then, the purge gas is stopped.
- the gate electrode film 406 may be preferably made of polycrystal, but may be another type of metal electrode such as SiGe, TiN, WN and Ni.
- the silicon nitride film 402 , the metal-compound film 404 and the gate electrode film 406 are etched into given shapes to obtain a gate electrode. Then, while forming a side wall 410 on the lateral face of the gate electrode, a dopant is introduced into the gate electrode and the surface of the silicon substrate 400 adjacent to both sides of the gate electrode. Thus, an MOSFET shown in FIG. 13F is prepared.
- the gate insulating film comprises a metal-compound film 404 having the above particular composition, it can effectively prevent a dopant in the gate electrode film 406 from penetrating the gate insulating film into the silicon substrate 400 .
- a highly reliable transistor can be obtained.
- a Zr-containing and an Hf-containing films are used for a capacitor and a transistor, respectively, in the above embodiments.
- An Hf-containing and a Zr-containing films may be, on the contrary, used for a capacitor and a transistor, respectively.
- a film containing both Hf and Zr may be used as a capacitive and/or a gate insulating films.
- a capacitive or gate insulating film may be single-layered or multi-layered. When being multi-layered, it may comprise a plurality of metal-compound films having the above particular composition. In a multilayered structure, the individual layers may have different compositions, for example, as in a laminate film of ZrOCN and HfOCN as long as they have a composition within the above particular range.
- a part in contact with an electrode may be made of a material other than that in the above metal-compound film.
- a metal nitride or metal oxynitride film may be formed for preventing a reaction of silicon with the metal-compound film.
- a transistor On a silicon substrate was formed a transistor. In the upper part of the transistor was formed a cylindrical type capacitor having the structure in FIG. 1 as described in Embodiment 1 such that the capacitor was connected with a diffusion layer in the transistor.
- the capacitor had a structure where a lower electrode made of TiN with a thickness of 30 nm, a dielectric film with a thickness of 10 nm and an upper electrode made of TiN with a thickness of 30 nm were sequentially deposited.
- the dielectric film was deposited by atomic layer deposition. Varying the deposition conditions as shown in Table 1, samples Nos. 1 to 8 were prepared. Elemental compositions for the dielectric films thus prepared were determined by SIMS (secondary ion mass spectrometry). The results were shown in Table 2.
- sample Nos. 6 to 8 had a composition deviating from the range for x, y and z defined in the above formula. It may be found that although in all of sample Nos. 6 to 8 and Nos. 2 to 4, Zr(N(CH 3 ) (C 2 H 5 )) 4 (tetrakis-methylethylamino-zirconium) is used, a composition in a film obtained may vary depending on the deposition conditions. It demonstrates that a metal-compound film having a composition represented by zrO x C y N z meeting the above conditions cannot be obtained simply by selecting a deposition gas as appropriate, but can be obtained only by appropriately selecting a deposition gas and optimizing the deposition conditions.
- the deposition conditions may include a deposition temperature, a deposition pressure, a deposition rate and a feeding time of a deposition gas. A combination of these conditions may be optimized to obtain the above metal-compound film.
- sample Nos. 1, 3, 5 and 8 were determined for a capacity and a leak current for comparison.
- the results are shown in FIG. 14.
- a plurality of measurement results are shown for each sample because measurement was conducted in multiple runs, varying a film thickness deposited. The results indicate that sample No. 3 has a smaller leak current than any other samples. Similar measurement was conducted for sample Nos. 2 and 4, giving the results that they have a smaller leak current than sample No. 1, 5 or 8. TABLE 1 NO. 1 NO. 2 NO. 3 NO. 4 NO. 5 NO. 6 NO. 7 NO.
- this invention can provide a highly reliable semiconductor device having a high capacity comprising a film made of a high dielectric constant material containing Zr and/or Hf, in which a leak current is reduced in the film.
- a capacitor having a high capacity with a reduced leak current can be provided.
- a transistor in which a film thickness calculated as a silicon oxide film is smaller and which comprises a reliable gate insulating film can be provided.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/324,536 US7943475B2 (en) | 2003-03-26 | 2006-01-04 | Process for manufacturing a semiconductor device comprising a metal-compound film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-084314 | 2003-03-26 | ||
JP2003084314A JP4907839B2 (ja) | 2003-03-26 | 2003-03-26 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/324,536 Division US7943475B2 (en) | 2003-03-26 | 2006-01-04 | Process for manufacturing a semiconductor device comprising a metal-compound film |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040217478A1 true US20040217478A1 (en) | 2004-11-04 |
Family
ID=33307875
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/807,248 Abandoned US20040217478A1 (en) | 2003-03-26 | 2004-03-24 | Semiconductor device and manufacturing process therefor |
US11/324,536 Expired - Fee Related US7943475B2 (en) | 2003-03-26 | 2006-01-04 | Process for manufacturing a semiconductor device comprising a metal-compound film |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/324,536 Expired - Fee Related US7943475B2 (en) | 2003-03-26 | 2006-01-04 | Process for manufacturing a semiconductor device comprising a metal-compound film |
Country Status (2)
Country | Link |
---|---|
US (2) | US20040217478A1 (ja) |
JP (1) | JP4907839B2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090233434A1 (en) * | 2008-03-12 | 2009-09-17 | Weon-Hong Kim | Method of manufacturing semiconductor devices |
US20090246949A1 (en) * | 2008-03-27 | 2009-10-01 | Samsung Electronics Co., Ltd. | Methods of manufacturing semiconductor devices |
US20100148304A1 (en) * | 2008-12-11 | 2010-06-17 | Irfan Rahim | Integrated circuit decoupling capacitors |
US20100207243A1 (en) * | 2009-02-16 | 2010-08-19 | Weon-Hong Kim | Semiconductor device and method of fabricating the same |
US8084808B2 (en) | 2005-04-28 | 2011-12-27 | Micron Technology, Inc. | Zirconium silicon oxide films |
US8154066B2 (en) | 2004-08-31 | 2012-04-10 | Micron Technology, Inc. | Titanium aluminum oxide films |
US8501563B2 (en) | 2005-07-20 | 2013-08-06 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3863391B2 (ja) * | 2001-06-13 | 2006-12-27 | Necエレクトロニクス株式会社 | 半導体装置 |
US7964470B2 (en) * | 2006-03-01 | 2011-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flexible processing method for metal-insulator-metal capacitor formation |
KR20070110748A (ko) * | 2006-05-15 | 2007-11-20 | 주식회사 하이닉스반도체 | 커패시터 형성 방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6627034B1 (en) * | 1999-07-27 | 2003-09-30 | North Carolina State University | Pattern release film between two laminated surfaces |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284663B1 (en) * | 1998-04-15 | 2001-09-04 | Agere Systems Guardian Corp. | Method for making field effect devices and capacitors with thin film dielectrics and resulting devices |
JP3988176B2 (ja) * | 1999-10-27 | 2007-10-10 | 三菱マテリアル株式会社 | 切粉に対する表面潤滑性にすぐれた表面被覆超硬合金製スローアウエイチップ形状切削工具 |
US6527866B1 (en) * | 2000-02-09 | 2003-03-04 | Conductus, Inc. | Apparatus and method for deposition of thin films |
KR20020048720A (ko) * | 2000-12-18 | 2002-06-24 | 박종섭 | 구리를 사용한 대머신 금속배선 형성 방법 |
JP2002231656A (ja) * | 2001-01-31 | 2002-08-16 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP5194328B2 (ja) * | 2001-02-01 | 2013-05-08 | ソニー株式会社 | 半導体装置及びその製造方法 |
US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
JP2002343790A (ja) * | 2001-05-21 | 2002-11-29 | Nec Corp | 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法 |
JP3863391B2 (ja) * | 2001-06-13 | 2006-12-27 | Necエレクトロニクス株式会社 | 半導体装置 |
JP4921652B2 (ja) * | 2001-08-03 | 2012-04-25 | エイエスエム インターナショナル エヌ.ヴェー. | イットリウム酸化物およびランタン酸化物薄膜を堆積する方法 |
JP2003060198A (ja) * | 2001-08-10 | 2003-02-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2003086769A (ja) * | 2001-09-07 | 2003-03-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6877144B1 (en) * | 2002-02-28 | 2005-04-05 | Dupont Photomasks, Inc. | System and method for generating a mask layout file to reduce power supply voltage fluctuations in an integrated circuit |
JP2003303820A (ja) | 2002-04-10 | 2003-10-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100513719B1 (ko) | 2002-08-12 | 2005-09-07 | 삼성전자주식회사 | 하프늄 산화막 형성용 전구체 및 상기 전구체를 이용한하프늄 산화막의 형성방법 |
US7425493B2 (en) * | 2002-08-17 | 2008-09-16 | Samsung Electronics Co., Ltd. | Methods of forming dielectric structures and capacitors |
US7037863B2 (en) * | 2002-09-10 | 2006-05-02 | Samsung Electronics Co., Ltd. | Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices |
JP2004104025A (ja) | 2002-09-12 | 2004-04-02 | Fujitsu Ltd | 膜形成方法 |
JP4046588B2 (ja) * | 2002-10-10 | 2008-02-13 | Necエレクトロニクス株式会社 | キャパシタの製造方法 |
KR100463633B1 (ko) | 2002-11-12 | 2004-12-29 | 주식회사 아이피에스 | 하프늄 화합물을 이용한 박막증착방법 |
US7183165B2 (en) * | 2002-11-25 | 2007-02-27 | Texas Instruments Incorporated | Reliable high voltage gate dielectric layers using a dual nitridation process |
JP3920235B2 (ja) * | 2003-03-24 | 2007-05-30 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP4502189B2 (ja) * | 2004-06-02 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | 薄膜の形成方法および半導体装置の製造方法 |
JP4718795B2 (ja) * | 2004-06-02 | 2011-07-06 | ルネサスエレクトロニクス株式会社 | 気相成長装置内の処理方法 |
-
2003
- 2003-03-26 JP JP2003084314A patent/JP4907839B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-24 US US10/807,248 patent/US20040217478A1/en not_active Abandoned
-
2006
- 2006-01-04 US US11/324,536 patent/US7943475B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6627034B1 (en) * | 1999-07-27 | 2003-09-30 | North Carolina State University | Pattern release film between two laminated surfaces |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8541276B2 (en) | 2004-08-31 | 2013-09-24 | Micron Technology, Inc. | Methods of forming an insulating metal oxide |
US8154066B2 (en) | 2004-08-31 | 2012-04-10 | Micron Technology, Inc. | Titanium aluminum oxide films |
US8084808B2 (en) | 2005-04-28 | 2011-12-27 | Micron Technology, Inc. | Zirconium silicon oxide films |
US8501563B2 (en) | 2005-07-20 | 2013-08-06 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US8921914B2 (en) | 2005-07-20 | 2014-12-30 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7704867B2 (en) * | 2008-03-12 | 2010-04-27 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor devices |
US20090233434A1 (en) * | 2008-03-12 | 2009-09-17 | Weon-Hong Kim | Method of manufacturing semiconductor devices |
KR101417728B1 (ko) * | 2008-03-12 | 2014-07-11 | 삼성전자주식회사 | 지르코늄 유기산질화막 형성방법 및 이를 이용하는 반도체장치 및 그 제조방법 |
US7977257B2 (en) * | 2008-03-27 | 2011-07-12 | Samsung Electronics Co., Ltd. | Methods of manufacturing semiconductor devices |
US20090246949A1 (en) * | 2008-03-27 | 2009-10-01 | Samsung Electronics Co., Ltd. | Methods of manufacturing semiconductor devices |
KR101515471B1 (ko) * | 2008-03-27 | 2015-05-06 | 삼성전자주식회사 | 지르코늄 산화막과 지르코늄 산질화막 형성방법 및 이를이용하는 반도체 장치 및 그 제조방법 |
US9425192B2 (en) * | 2008-12-11 | 2016-08-23 | Altera Corporation | Integrated circuit decoupling capacitors |
US20100148304A1 (en) * | 2008-12-11 | 2010-06-17 | Irfan Rahim | Integrated circuit decoupling capacitors |
US8471359B2 (en) * | 2009-02-16 | 2013-06-25 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
US8796087B2 (en) | 2009-02-16 | 2014-08-05 | Samsung Electronics Co., Ltd. | Method of fabricating a semiconductor device |
US20100207243A1 (en) * | 2009-02-16 | 2010-08-19 | Weon-Hong Kim | Semiconductor device and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US7943475B2 (en) | 2011-05-17 |
JP2004296582A (ja) | 2004-10-21 |
US20060121671A1 (en) | 2006-06-08 |
JP4907839B2 (ja) | 2012-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7943475B2 (en) | Process for manufacturing a semiconductor device comprising a metal-compound film | |
US9281373B2 (en) | Semiconductor device having tungsten gate electrode and method for fabricating the same | |
US7723770B2 (en) | Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions | |
US7382014B2 (en) | Semiconductor device with capacitor suppressing leak current | |
US10199228B2 (en) | Manufacturing method of metal gate structure | |
US8350335B2 (en) | Semiconductor device including off-set spacers formed as a portion of the sidewall | |
US20130161764A1 (en) | Replacement gate having work function at valence band edge | |
US20040106261A1 (en) | Method of forming an electrode with adjusted work function | |
US11171061B2 (en) | Method for patterning a lanthanum containing layer | |
US8476714B2 (en) | Semiconductor device | |
US20040224475A1 (en) | Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devices | |
US20050141168A1 (en) | Capacitor with aluminum oxide and lanthanum oxide containing dielectric structure and fabrication method thereof | |
JP2012004577A (ja) | 高誘電率のゲート絶縁膜を有する半導体装置及びそれの製造方法 | |
US20150140838A1 (en) | Two Step Deposition of High-k Gate Dielectric Materials | |
US8633119B2 (en) | Methods for manufacturing high dielectric constant films | |
JP2012186259A (ja) | 半導体装置の製造方法および半導体装置 | |
US8633114B2 (en) | Methods for manufacturing high dielectric constant films | |
KR20110004670A (ko) | 반도체 소자 및 그 제조 방법 | |
WO2023004942A1 (zh) | 通过沉积工艺形成薄膜的方法 | |
US20230013102A1 (en) | Semiconductor device structure and methods of forming the same | |
US20230135155A1 (en) | Atomic Layer Etching to Reduce Pattern Loading in High-K Dielectric Layer | |
US20230164994A1 (en) | Three-dimensional semiconductor devices and method of manufacturing the same | |
KR20070106287A (ko) | 반도체소자의 캐패시터 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NEC ELECTRONICS CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAMOTO, TOMOE;IIZUKA, TOSHIHIRO;REEL/FRAME:014819/0459 Effective date: 20040615 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |