US20030178752A1 - Indium oxide powder, method for preparing the same, and method for manufacturing high-density indium tin oxide target - Google Patents

Indium oxide powder, method for preparing the same, and method for manufacturing high-density indium tin oxide target Download PDF

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US20030178752A1
US20030178752A1 US10/320,406 US32040602A US2003178752A1 US 20030178752 A1 US20030178752 A1 US 20030178752A1 US 32040602 A US32040602 A US 32040602A US 2003178752 A1 US2003178752 A1 US 2003178752A1
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powder
indium
precipitate
solution
ito
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Kyong-hwa Song
Sang-Cheol Park
Jung-Gyu Nam
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Corning Precision Materials Co Ltd
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Samsung Corning Co Ltd
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Definitions

  • the present invention relates to indium oxide (In 2 O 3 ) powder, a method for preparing the indium oxide powder, and a method for manufacturing an indium tin oxide (ITO) target. More particularly, the present invention relates to indium oxide powder for a high-density ITO target which is used in vacuum deposition of a high-quality transparent electrode layer of a display such as a liquid crystal display (LC.D), electroluminescent (EL) display, and field emission display (FED), a method for preparing the indium oxide powder, and a method for manufacturing a high-density indium tin oxide target (ITO) using the indium oxide powder.
  • a display such as a liquid crystal display (LC.D), electroluminescent (EL) display, and field emission display (FED)
  • a method for preparing the indium oxide powder and a method for manufacturing a high-density indium tin oxide target (ITO) using the indium oxide powder.
  • ITO films with the composition of In 2 O 3 and SnO 2 in a ratio of about 9:1 have been widely used as a transparent electrode film for an LCD, EL, or FED.
  • an ITO film is coated on an insulating substrate such as a glass substrate by sputtering an ITO target.
  • the ITO target is manufactured by molding ITO powder into a predetermined shape, for example, a rectangular parallelepiped shape, followed by sintering at a high temperature. To form a high-quality ITO film on the substrate by sputtering, the ITO target needs to have a high sintering density. If a low-density ITO target is used to form an ITO film by sputtering, nodules are easily generated on the target surface, thereby lowering the quality and yield of the resulting ITO film.
  • ITO particles should be of an appropriate primary particle diameter.
  • the ITO particle diameter is inversely proportional to the target's sintering density. Therefore, the particle diameter should be reduced to increase the sintering density of the target.
  • a method that is currently available for forming a high-density target having an approximately theoretical density is to reduce the particle diameter to a nano-scale. To manufacture a high-density target, it is important to adjust the ITO particle diameter to be uniform, as well as to reduce the particle diameter, for the following reasons.
  • a primary particle diameter of the ITO particles is too small, it is difficult to grind the particles after hydroxide calcination even though the driving force for sintering increases sufficiently for higher sintering density due to an increased specific surface area. It is also difficult to obtain a large molded body due to stress caused from the generation of many fine pores between the particles during target molding.
  • a primary particle diameter of the ITO particles is too large, the fluidity and molding properties of the powder are improved, whereas the driving force for particle sintering is too low, so that pores between the particles become greatly enlarged, thereby increasing the energy requirement for removing the pores.
  • the particle diameter should be fine and within a narrow range, and it should be easy to grind secondary particles.
  • a vapor phase method known for fine powder synthesis has been attracting attention as a method for nano-sized powder synthesis, but is limited to small-scale production of specific powder due to the difficulty of large-scale production.
  • the particle diameter is reduced by grinding.
  • the particle diameter of secondary particles rather than primary particles, which agglomerate to form the secondary particles, is controlled.
  • a liquid phase method has been used as a general method of large-scale powder production.
  • a precipitation method has been especially widely used to prepare ITO powder by precipitating metallic ions in a solution using a precipitant.
  • the powder's characteristics are dependent upon the solution concentration, the reaction pH, the reaction temperature, the type of precipitant, the rate of adding a precipitant, etc.
  • the concentration of the indium solution is an important factor affecting the characteristics of the In 2 O 3 powder prepared by precipitation.
  • none of the methods of the prior art have limited the concentration of the indium solution for precipitation.
  • In 2 O 3 powder having a surface area of about 5-18 m 2 /g and an average particle diameter of about 40-160 nm.
  • a method for preparing In 2 O 3 powder including adding an alkaline precipitate to an indium solution having an indium ion concentration of about 2-5 M at a rate of about 0.5-4 L/min while adjusting a pH of the indium solution to about 5-9 to form an In(OH 3 ) precipitate, and calcining the precipitate at a temperature of between about 600 to 1,100° C. to produce the In 2 O 3 powder.
  • the In 2 O 3 powder preparation method may further include dissolving metallic indium of an indium-containing salt in water to form the indium solution, wherein the indium-containing salt includes InCl 3 and In(NO 3 ) 3 .
  • the alkaline precipitant may include NH 4 OH, NH 3 gas, NaOH, KOH, NH 4 HCO 3 , (NH 4 ) 2 CO 3 , and a mixture including at least two of the forgoing materials.
  • the In 2 O 3 powder preparation method may further include washing and drying the precipitate before the calcination.
  • an ITO (indium tin oxide) target including molding a mixture of about 80-95% by weight In 2 O 3 powder having a surface area of about 5-18 m 2 /g and an average particle diameter of between about 40-160 nm and about 5-20% by weight SnO 2 powder having a surface area of between about 1 to 16 m 2 /g, and sintering the mixture.
  • the ITO target preferably has a sintering density of between about 7.0 to 7.15 g/cm 3 , and a sintering temperature of from about 1,200° C. to about 1,600° C.
  • a high-quality transparent electrode for a display such as a liquid crystal display (LCD), electroluminescent display (EL), or field emission display (FED), may be easily manufactured.
  • LCD liquid crystal display
  • EL electroluminescent display
  • FED field emission display
  • FIG. 1 depicts a flowchart for illustrating a method for preparing indium oxide (In 2 O 3 ) powder according to a preferred embodiment of the present invention
  • FIG. 2 depicts a flowchart for illustrating an embodiment of a method for manufacturing an indium tin oxide (ITO) target according to the present invention by mixing SnO 2 powder with the In 2 O 3 powder prepared by the method depicted in FIG. 1.
  • ITO indium tin oxide
  • Indium oxide (In 2 O 3 ) powder a method for preparing the In 2 O 3 powder, and a method for manufacturing an indium tin oxide (ITO) target using the In 2 O 3 powder according to the present invention will now be described in detail.
  • the inventors of the present invention have discovered that fine, uniform, highly pure In 2 O 3 powder suitable for a high-density ITO target may be prepared by systematically and accurately controlling the concentration of an indium solution as well as the temperature of precipitation reaction, the pH of the indium solution, the calcination temperature of In 2 O 3 precipitate.
  • the concentration of the indium solution is an important factor.
  • precipitate nuclei are generated in a reaction solution with the addition of a precipitant. Precipitate nuclei collide and grow into primary particles. These primary particles generate nano-sized powder.
  • the solution concentration affects the number of precipitate nuclei during the precipitation and the probability of the nuclei colliding, and thus determines the size and shape of the particles.
  • precipitate nuclei are more likely to collide so that larger particles than those obtained by using a low-concentration reaction solution may be formed.
  • spherical In 2 O 3 powder of a particular size and surface area, capable of being sintered into a high-density ITO target, is prepared by adjusting the initial concentration of indium ions in an indium solution.
  • the present invention also provides a method for manufacturing a high-density ITO target by limiting the average particle diameter of SnO 2 powder to provide a maximum sintering density when mixed with the In 2 O 3 powder of a particular size and surface area prepared by the following method according to the present invention.
  • FIG. 1 depicts a flowchart for illustrating an embodiment of a method for preparing InO 3 powder according to the present invention.
  • metallic indium or any indium-containing salt such as InCl 3 , In(NO 3 ) 3 , etc.
  • an indium solution is obtained by dissolving the metallic indium in an acid such as a nitric acid.
  • an indium-containing salt is used, an indium solution is prepared by dissolving the indium-containing salt in distilled water (Step 3).
  • the initial concentration of indium ions is controlled to about 2-5 M.
  • concentration of indium ions is less than about 2 M, precipitation reaction time is increased, and yield is decreased. If the concentration of indium ions is greater than about 5 M, non-uniform particles are produced because the precipitant is not mixed smoothly due to thickening of the precipitate slurry during precipitation.
  • an alkaline precipitant is added to the indium solution prepared as described above to obtain In(OH) x precipitate (Step 5).
  • Types of available alkaline precipitants are not limited.
  • NH 4 OH, NH 3 gas, NaOH, KOH, NH 4 HC.O 3 , (NH 4 ) 2 CO 3 , and a mixture including at least two of the foregoing materials may be used as the alkaline precipitant.
  • the rate of adding the precipitant is adjusted to about 0.5-4 L/min. If the rate of adding the precipitant is less than about 0.5 L/min, precipitation reaction time is increased. If the rate of adding the precipitant is greater than about 4 L/min, the precipitant is not mixed thoroughly, causing partial precipitation, thereby resulting in non-uniform precipitate particles.
  • the pH of the indium solution is adjusted to between about 5 to 9. If the pH of the indium solution is less than about 5, the precipitate particles are very small. The pH of the indium solution greater than about 9 may have an adverse effect on the environment due to excess hydroxyl (OH) groups.
  • the precipitate is aged, separated using a centrifuge, and washed (Step 7).
  • the washed precipitate is dried in an oven (Step 9), ground, and calcined in an electric furnace (Step 11) to obtain In 2 O 3 powder.
  • the calcination temperature is adjusted to between about 600 to 1100° C. If the calcination temperature is lower than about 600° C., the average particle diameter of the In 2 O 3 powder is too small. If the calcination temperature is higher than about 1100° C., the In 2 O 3 powder is sintered.
  • In 2 O 3 powder having a surface area of about 5-18 m 2 /g and an average particle diameter of between about 40 to 160 nm when measured by a BET method may be obtained. If a surface area of the In 2 O 3 powder measured by the BET method is less than about 5 m 2 /g (corresponding to an average particle diameter of about 160 nm), the primary average particle diameter is too large to provide enough driving force for a high sintering density. If a surface area of the In 2 O 3 powder is larger than about 18 m 2 /g (corresponding to an average particle diameter of about 50 nm), the primary average particle diameter is too fine to mold the In 2 O 3 powder. Accordingly, it is difficult to achieve and obtain both a high molding density and a high sintering density.
  • FIG. 2 depicts a flowchart for illustrating a method for preparing a high-density ITO target by mixing SnO 2 powder with the In 2 O 3 powder prepared by a method according to the present invention.
  • SnO 2 powder has a surface area of between about 1 to 16 m 2 /g, preferably between about 4 to 15 m 2 /g, when measured by the BET method.
  • the In 2 O 3 and the SnO 2 are mixed by, for example, ball milling (Step 15).
  • the resulting powder mixture is dried and molded into a rectangular parallelepiped target (Step 17).
  • the molded product is thermally treated at between about 1,200 to 1,600° C. in a sintering furnace to obtain an ITO target (Step 19).
  • the characteristics of the final ITO target are evaluated by measuring, for example, the sintering density. If the sintering temperature is lower than about 1,200° C., it is difficult to completely solidify the two oxides during the sintering, and the energy is insufficient for a high sintering density.
  • the yield of the ITO target decreases with increasing sintering duration because In 2 O 3 and SnO 2 are volatile at high temperatures.
  • SnO 2 powder was synthesized to be mixed with In 2 O 3 powder and sintered to form ITO targets in the following examples 1 through 6 and comparative examples 1-7 is described herein.
  • SnC.I 4 was dissolved to obtain a tin ion solution containing tin ions in a concentration of 1.0 M.
  • a precipitant with hydroxyl ( ⁇ OH) group was added to the solution at a rate of 1 L/min to obtain Sn(OH)x precipitate.
  • the Sn(OH) x precipitate was aged for 20-24 hours, separated using a centrifuge, and washed with distilled water.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground.
  • the ground powder was calcined in an electric furnace at 700° C. for 2 hours.
  • the resulting SnO 2 powder had a surface area of 10 m 2 /g when measured by the BET method.
  • a predetermined amount of In(NO 3 ) 3 equivalent to a final indium ion concentration of 2.5 M, was dissolved in distilled water.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min. The pH of the solution was adjusted to 8.
  • the resulting precipitate was aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 700° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 18 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target of a 20-cm width, 15-cm length, and 1-cm height had a sintering density of 7.13 g/cm 3 .
  • EXAMPLE 2 287.2 g of metallic indium was completely dissolved in 1 L 60%-nitric acid to obtain a 3 M In(NO 3 ) 3 solution.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min.
  • the pH of the solution was adjusted to 8.
  • the resulting precipitate was aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 800° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 17 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape and sintered.
  • the resulting ITO target of a 20-cm width, 15-cm length, and 1-cm height had a sintering density of 7.14 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 equivalent to a final indium ion concentration of 2.5 M, was dissolved in distilled water.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 0.5 L/min.
  • the pH of the solution was adjusted to 8.
  • the resulting precipitate was aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 800° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 16 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target of a 20-cm width, 15-cm length, and 1-cm height had a sintering density of 7.08 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 3.0 M.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min. The pH of the solution was adjusted to 7.
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 800° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 14 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target of a 20-cm width, 15-cm length, and 1-cm height had a sintering density of 7.10 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 2.5 M was dissolved in distilled water.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min. The pH of the solution was adjusted to 7.
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 850° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 11 m 2 /g when measured by the BET method.
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 2.5 M.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 1 L/min. The pH of the solution was adjusted to 7 .
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 850° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 12 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target had a sintering density of 6.91 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 2.5 M.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 0.05 L/min to obtain a precipitate.
  • the pH of the solution was adjusted to 8.
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 700° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 30 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target had a sintering density of 6.30 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 2.5 M.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min. The pH of the solution was adjusted to 4.
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed. The washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling. The ground powder was calcined in an electric furnace at 700° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 23 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target had a sintering density of 6.60 g/cm 3 .
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target had a sintering density of 6.48 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 5.5 M.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min to obtain a precipitate.
  • the pH of the solution was adjusted to 8.
  • the viscosity of the slurry was high due to the high-concentration reaction solution.
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 800° C. for 2 hours.
  • the resulting In 2 O 3 powder had a surface area of 4.5 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target had a sintering density of 6.18 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 2.5 M.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min to obtain a precipitate.
  • the pH of the solution was adjusted to 8.
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 1200° C. for 2 hours. Observation using a scanning electron microscope (SEM), after the calcination, indicated that the particles had grown significantly.
  • the resulting In 2 O 3 powder had a surface area of 4.3 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target had a sintering density of 6.51 g/cm 3 .
  • a predetermined amount of In(NO 3 ) 3 was dissolved in distilled water to obtain an indium solution having an indium ion concentration of 3.0 M.
  • a precipitate was obtained by adding 28% NH 4 OH as a precipitant to the solution at a rate of 2 L/min to obtain a precipitate.
  • the pH of the solution was adjusted to 10.
  • the resulting precipitate was stirred, aged for 18-24 hours, separated using a centrifuge, and washed. There was a strong ammonia smell during the wash.
  • the washed precipitate was dried at 100° C. in an oven, and the dried powder was ground by ball milling.
  • the ground powder was calcined in an electric furnace at 800° C. for 2 hours. Observation using a scanning electron microscope (SEM), after the calcination, indicated that the particles had grown significantly.
  • the resulting In 2 O 3 powder had a surface area of 31 m 2 /g when measured by the BET method.
  • the In 2 O 3 powder prepared as described above and SnO 2 powder having a surface area of 10 m 2 /g when measured by the BET method were mixed in a weight ratio of 90:10.
  • the powder mixture was molded into a predetermined shape using a mold and sintered.
  • the resulting ITO target had a sintering density of 6.67 g/cm 3 .
  • In 2 O 3 powder may be prepared as in examples 1 through 6 by adjusting the concentration of the indium solution as well as the rate of adding the precipitant, the pH of the indium solution, and the calcination temperature and sintering the mixture.
  • a high-density ITO target of about above 7.0 g/cm 3 may be manufactured.
  • a very high sintering density approximate to a theoretical density of 7.15 g/cm 3 , may be obtained for the ITO targets.
  • a preparation method of the present invention it is possible to conveniently manufacture In 2 O 3 powder having a uniform primary average particle diameter of 40-160 nm, which may be further ground into secondary particles of a size (D50 or D90) less than 1 pm.
  • a high-density ITO target may be manufactured.
  • the high-density ITO target according to the present invention is applicable for a high-quality, transparent electrode film for an LCD, EL, FED, etc. by sputtering in a vacuum.

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EP1705154A1 (en) * 2005-03-22 2006-09-27 Dowa Mining Co., Ltd Indium oxide powder and method for producing same
US20070295944A1 (en) * 2002-03-22 2007-12-27 Samsung Corning Co., Ltd. Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
US20080173962A1 (en) * 2007-01-22 2008-07-24 Samsung Corning Co., Ltd. Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same
CN105776321A (zh) * 2014-12-23 2016-07-20 中国科学院苏州纳米技术与纳米仿生研究所 铟锡氧化物纳米晶复合溶液、其制备方法及应用
RU2684008C1 (ru) * 2018-03-26 2019-04-03 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) СПОСОБ ПОЛУЧЕНИЯ ОКСИДНОЙ МИШЕНИ, СОСТОЯЩЕЙ ИЗ DyInO3
CN112110481A (zh) * 2020-08-27 2020-12-22 韶关市欧莱高新材料有限公司 一种超细氧化铟粉体的制备方法
CN113735565A (zh) * 2021-08-30 2021-12-03 深圳市众诚达应用材料科技有限公司 低锡含量ito溅射靶材、制备方法及薄膜太阳能电池
CN114805834A (zh) * 2022-04-29 2022-07-29 辽宁师范大学 用于制备电容器电极的铟掺杂钴-mof衍生物及生产方法

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JP4707449B2 (ja) * 2005-04-28 2011-06-22 三井金属鉱業株式会社 酸化インジウム粉末
JP4707448B2 (ja) * 2005-04-28 2011-06-22 三井金属鉱業株式会社 酸化インジウム粉末の製造方法
JP2007009268A (ja) * 2005-06-29 2007-01-18 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットの製造方法
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JP5898558B2 (ja) * 2012-04-27 2016-04-06 国立大学法人東京工業大学 オレフィン製造用触媒の製造方法及びオレフィン製造用触媒、並びにオレフィンの製造方法
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JP6085780B2 (ja) * 2013-05-31 2017-03-01 国立大学法人東京工業大学 オレフィン製造用触媒の調製方法及びオレフィンの製造方法
KR101824457B1 (ko) 2016-10-18 2018-02-01 김현상 실석쇠
CN107473715B (zh) * 2017-09-27 2020-11-20 深圳市特普生传感有限公司 一种三元系ntc热敏电阻材料及其制造方法
CN112457025B (zh) * 2020-12-11 2022-08-30 广西晶联光电材料有限责任公司 一种大比表面积纳米ito粉的制备方法

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US20070295944A1 (en) * 2002-03-22 2007-12-27 Samsung Corning Co., Ltd. Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
US7799312B2 (en) * 2002-03-22 2010-09-21 Samsung Corning Precision Glass Co., Ltd. Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
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TWI401211B (zh) * 2005-03-22 2013-07-11 Dowa Mining Co 氧化銦粉末及其製造方法
US20080173962A1 (en) * 2007-01-22 2008-07-24 Samsung Corning Co., Ltd. Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same
CN105776321A (zh) * 2014-12-23 2016-07-20 中国科学院苏州纳米技术与纳米仿生研究所 铟锡氧化物纳米晶复合溶液、其制备方法及应用
RU2684008C1 (ru) * 2018-03-26 2019-04-03 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) СПОСОБ ПОЛУЧЕНИЯ ОКСИДНОЙ МИШЕНИ, СОСТОЯЩЕЙ ИЗ DyInO3
CN112110481A (zh) * 2020-08-27 2020-12-22 韶关市欧莱高新材料有限公司 一种超细氧化铟粉体的制备方法
CN113735565A (zh) * 2021-08-30 2021-12-03 深圳市众诚达应用材料科技有限公司 低锡含量ito溅射靶材、制备方法及薄膜太阳能电池
CN114805834A (zh) * 2022-04-29 2022-07-29 辽宁师范大学 用于制备电容器电极的铟掺杂钴-mof衍生物及生产方法

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